CN107526543B - 形性存储设备 - Google Patents

形性存储设备 Download PDF

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Publication number
CN107526543B
CN107526543B CN201710455905.1A CN201710455905A CN107526543B CN 107526543 B CN107526543 B CN 107526543B CN 201710455905 A CN201710455905 A CN 201710455905A CN 107526543 B CN107526543 B CN 107526543B
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flash memory
physical flash
requirements
bit error
memory blocks
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CN107526543A (zh
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I.S.崔
奇亮奭
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • G06F3/0655Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
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    • GPHYSICS
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    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Quality & Reliability (AREA)
  • Computer Security & Cryptography (AREA)
  • Health & Medical Sciences (AREA)
  • Biomedical Technology (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • Detection And Correction Of Errors (AREA)
  • Debugging And Monitoring (AREA)
  • Memory System (AREA)
CN201710455905.1A 2016-06-20 2017-06-16 形性存储设备 Active CN107526543B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201662352509P 2016-06-20 2016-06-20
US62/352,509 2016-06-20
US15/242,433 2016-08-19
US15/242,433 US10055159B2 (en) 2016-06-20 2016-08-19 Morphic storage device

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Publication Number Publication Date
CN107526543A CN107526543A (zh) 2017-12-29
CN107526543B true CN107526543B (zh) 2022-02-01

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US (2) US10055159B2 (enExample)
JP (1) JP6847764B2 (enExample)
KR (2) KR102477581B1 (enExample)
CN (1) CN107526543B (enExample)
TW (2) TWI699647B (enExample)

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