JP6847764B2 - フラッシュメモリの割当方法及びそれを用いたソリッドステートドライブ - Google Patents

フラッシュメモリの割当方法及びそれを用いたソリッドステートドライブ Download PDF

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JP6847764B2
JP6847764B2 JP2017099640A JP2017099640A JP6847764B2 JP 6847764 B2 JP6847764 B2 JP 6847764B2 JP 2017099640 A JP2017099640 A JP 2017099640A JP 2017099640 A JP2017099640 A JP 2017099640A JP 6847764 B2 JP6847764 B2 JP 6847764B2
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flash memory
requirements
physical flash
bit error
memory blocks
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JP2017228287A (ja
JP2017228287A5 (enExample
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インソク ステファン チョイ，
インソク ステファン チョイ，
亮 ソク 奇
亮 ソク 奇
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Samsung Electronics Co Ltd
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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Quality & Reliability (AREA)
  • Computer Security & Cryptography (AREA)
  • Health & Medical Sciences (AREA)
  • Biomedical Technology (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • Memory System (AREA)
  • Detection And Correction Of Errors (AREA)
  • Debugging And Monitoring (AREA)
JP2017099640A 2016-06-20 2017-05-19 フラッシュメモリの割当方法及びそれを用いたソリッドステートドライブ Active JP6847764B2 (ja)

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US201662352509P 2016-06-20 2016-06-20
US62/352,509 2016-06-20
US15/242,433 2016-08-19
US15/242,433 US10055159B2 (en) 2016-06-20 2016-08-19 Morphic storage device

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JP2017228287A JP2017228287A (ja) 2017-12-28
JP2017228287A5 JP2017228287A5 (enExample) 2020-07-02
JP6847764B2 true JP6847764B2 (ja) 2021-03-24

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KR (2) KR102477581B1 (enExample)
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KR102477581B1 (ko) 2022-12-14
US10055159B2 (en) 2018-08-21
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TW202040366A (zh) 2020-11-01
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US20170364298A1 (en) 2017-12-21
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US10489075B2 (en) 2019-11-26
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