CN107526190A - 一种ltps的制备工艺 - Google Patents

一种ltps的制备工艺 Download PDF

Info

Publication number
CN107526190A
CN107526190A CN201610456801.8A CN201610456801A CN107526190A CN 107526190 A CN107526190 A CN 107526190A CN 201610456801 A CN201610456801 A CN 201610456801A CN 107526190 A CN107526190 A CN 107526190A
Authority
CN
China
Prior art keywords
ltps
sio
preparation technology
layer
colloidal sol
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610456801.8A
Other languages
English (en)
Inventor
张帆
张毅先
任思雨
苏君海
李建华
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Truly Huizhou Smart Display Ltd
Original Assignee
Truly Huizhou Smart Display Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Truly Huizhou Smart Display Ltd filed Critical Truly Huizhou Smart Display Ltd
Priority to CN201610456801.8A priority Critical patent/CN107526190A/zh
Publication of CN107526190A publication Critical patent/CN107526190A/zh
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1254—Sol or sol-gel processing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Thermal Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Nonlinear Science (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Dispersion Chemistry (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

本发明公开一种LTPS的制备工艺，使用正硅酸乙酯来制备LTPS中的SiOX膜层，具体步骤为将正硅酸乙酯与弱酸溶液混合，制成溶胶，再将溶胶涂覆并形成SiOX膜层；适当加厚栅极绝缘层的SiOX层并去掉该层的SiNX。由于TEOS所制备SiOX膜质更加致密而且不含有氮成分，使得与多晶硅层界面接触后界面缺陷减少，不会造成过大的平带电压漂移；并且由于栅极绝缘层结构改变和膜质的改变，Contect Hole只需简单分为氧化硅和氮化硅刻蚀，且通过改变刻蚀气体比例等工艺参数可改善形貌、CD Loss等刻蚀结果；由于膜层均匀性的可控性加强，对于刻蚀后的线宽更容易控制，从而有利于实现窄边框化。

Description

一种LTPS的制备工艺
技术领域
本发明涉及液晶显示领域，更具体地，涉及一种LTPS的制备工艺。
背景技术
在LTPS工艺中，各个膜层的优劣严重影响LTPS器件的性能。LTPS工艺中从下到上的膜层中包含SiOx有缓冲层（Buffer Layer：SiNx/SiOx）、栅极绝缘层（GI：SiOx/SiNx）和层间绝缘层（ILD：SiNx/SiOx)。由此可见，SiOx膜的致密性和均匀性等各方面的优劣严重影响着LTPS工艺的优劣。
在LTPS中，SiNx与玻璃接触的应力比较大，SiOx与多晶硅界面湿润角比较好因而采用上述堆叠结构。传统PECVD法使用SiH4和N2O气体制备的SiOx膜含有大量的Si-H键和Si-OH键，导致膜质疏松和悬挂键缺陷，且N2O中氮成分导致制备的SiOx膜与多晶硅层界面缺陷较多造成平带电压漂移较大。
在LTPS中，Contact Hole的刻蚀质量严重影响着LTPS器件的性能。LTPS制程中过孔刻蚀（Contact Hole）从上到下刻蚀包含层间绝缘层（ILD)和栅极绝缘层（GI）的SiOx/SiNx/SiNx/SiOx膜层结构，刻蚀过程中膜层材料、致密性、厚度的不同，使坡度角、形貌、CDLoss等参数难以控制。
发明内容
本发明的目的在于提高SiNx层的致密性和均匀性。
根据以上发明目的，本发明首先提供一种LTPS的制备工艺，使用正硅酸乙酯来制备LTPS中的SiOX膜层。
将正硅酸乙酯与弱酸溶液混合，制成溶胶，再将溶胶涂覆并形成SiOX膜层。
将涂覆后的溶胶置于高温环境中，形成致密的SiOX膜层。
增加栅极绝缘层的SiOx层的厚度，去掉栅极绝缘层的SiNx层。
所述的高温为450~650℃。
所述的弱酸溶液为草酸、醋酸、碳酸或次氯酸。
从另外一个角度来说，本发明再公开一种正硅酸乙酯在LTPS的制备工艺中的应用。
所述的正硅酸乙酯与弱酸溶液混合，制成溶胶，再将溶胶涂覆并形成SiOX膜层。
本发明具有以下优点：
1. 通过新的成膜方式来改善膜层的均匀性和膜质等特性，降低Contact Hole刻蚀难度，改善氧化硅与多晶硅界面特性并减少平带电压漂移，从而改进LTPS的整体的制备工艺。
2. 本发明的SiOx薄膜取代缓冲层和层间绝缘层中采用传统PECVD沉积的SiOx薄膜并且栅极绝缘层全部由该种SiOx薄膜组成。
3. 本发明未使用N2O和SiH4沉积，可减少氧化硅中的N含量和制备过程中产生的颗粒物、灰尘等不良，在一定程度上改善界面态缺陷和提高氧化硅薄膜质量。
4. 减少SiOx膜中含有的Si-H键和Si-OH键，进而减少悬挂键的缺陷密度而改善平带电压漂移。
5. 由于SiOx膜的致密性增加以及膜层变化显著，更有利于后期的Contact Hole刻蚀的控制。
6. 由于膜层均匀性的可控性加强，对于刻蚀后的线宽更容易控制，从而有利于实现窄边框化。
7. 本发明采用弱酸，可以加快反应速率，但酸性过强则会导致反应不易控制从而成膜效果难以控制。
具体实施方式
下面结合具体实施例进一步详细说明本发明。除非特别说明，本发明采用的试剂、设备和方法为本技术领域常规市购的试剂、设备和常规使用的方法。
实施例1
将TEOS和草酸分别置于两个独立的容器中，该容器可以控制液体流出的流速，然后将两种流出的液体汇集于可搅拌的容器中形成溶胶，再通过Slit Coating的模式将该溶胶均匀的涂覆于相应的膜层上，最后将该溶胶置于480℃左右的高温中形成SiOx薄膜。
实施例2
将TEOS和醋酸分别置于两个独立的容器中，该容器可以控制液体流出的流速，然后将两种流出的液体汇集于可搅拌的容器中形成溶胶，再通过Slit Coating的模式将该溶胶均匀的涂覆于产品上，形成栅极绝缘层，最后将该溶胶置于530℃左右的高温中形成SiOx薄膜。
实施例3
对实施例1和实施例2获得的产品进行以下性能测试。
致密性的提高------采用传统的CVD工艺成膜，膜厚均匀性大概在10%以下，而且膜质由于成膜材料及工艺导致膜层针孔密度大从而致密性差于TEOS溶胶所沉积的膜质。实施例1和实施例 2获得的膜均匀性可以控制到5% 以下。
Contact Hole刻蚀难度降低--------现在Contact Hole的刻蚀步骤：1、用CF4和O2为主，刻蚀ILD层的全部SiOx和部分SiNx；2、用C4F8、Ar和H2为主刻蚀剩余的SiNx和GI（SiNx/SiOx）。由于C4F8刻蚀SiNx容易产生沉积，导致刻蚀均匀性大于10%以及刻蚀速率难以控制，从而加大了刻蚀难度。而采用正硅酸乙酯TEOS来制备LTPS中的SiOX膜层，具体步骤为将正硅酸乙酯与弱酸溶液混合，制成溶胶，再将溶胶涂覆并形成SiOX膜层；适当加厚栅极绝缘层的SiOX层并去掉该层的SiNX，这样可以很好的规避掉剩下的SiNx刻蚀，从而可以改善刻蚀均匀性以及降低刻蚀难度。刻蚀均匀性大概可以从15-20%提升到10%以下，这样对于刻蚀后的线宽更容易控制。
电压漂移的减少--------采用传统的CVD工艺沉积SiOx膜，会由于沉积膜层所用的材料导致SiOx中含有N元素，而此元素的存在会导致多晶硅层界面缺陷较多而造成平带电压漂移较大。一般而言，N含量越高会导致氧化硅与多晶硅的界面缺陷增加，从而导致平带电压有较大漂移，进而影响器件的阈值电压和器件特性。

Claims (8)

1.一种LTPS的制备工艺，其特征在于，使用正硅酸乙酯来制备LTPS中的SiOX膜层。
2.根据权利要求1所述的LTPS的制备工艺，其特征在于，将正硅酸乙酯与弱酸溶液混合，制成溶胶，再将溶胶涂覆并形成SiOX膜层。
3.根据权利要求2所述的LTPS的制备工艺，其特征在于，将涂覆后的溶胶置于高温环境中，形成致密的SiOX膜层。
4.根据权利要求1-3任一所述的LTPS的制备工艺，其特征在于，增加栅极绝缘层的SiOx层的厚度，去掉栅极绝缘层的SiNx层。
5.根据权利要求2或3所述的LTPS的制备工艺，其特征在于，所述的弱酸溶液为草酸、醋酸、碳酸或次氯酸。
6.根据权利要求3所述的LTPS的制备工艺，其特征在于，所述的高温为450~650℃。
7.一种正硅酸乙酯在LTPS的制备工艺中的应用。
8.根据权利要求7所述的正硅酸乙酯在LTPS的制备工艺中的应用，其特征在于，所述的正硅酸乙酯与弱酸溶液混合，制成溶胶，再将溶胶涂覆并形成SiOX膜层。
CN201610456801.8A 2016-06-22 2016-06-22 一种ltps的制备工艺 Pending CN107526190A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610456801.8A CN107526190A (zh) 2016-06-22 2016-06-22 一种ltps的制备工艺

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610456801.8A CN107526190A (zh) 2016-06-22 2016-06-22 一种ltps的制备工艺

Publications (1)

Publication Number Publication Date
CN107526190A true CN107526190A (zh) 2017-12-29

Family

ID=60735445

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610456801.8A Pending CN107526190A (zh) 2016-06-22 2016-06-22 一种ltps的制备工艺

Country Status (1)

Country Link
CN (1) CN107526190A (zh)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1194726A (zh) * 1996-06-06 1998-09-30 精工爱普生株式会社 薄膜晶体管的制造方法、使用该方法的液晶显示装置和电子设备
JP2000223712A (ja) * 1999-02-02 2000-08-11 Matsushita Electric Ind Co Ltd 薄膜トランジスタおよびその製造方法
CN1700421A (zh) * 2004-05-21 2005-11-23 中国科学院微电子研究所 一种纳米线宽多晶硅栅刻蚀掩膜图形的形成方法
CN102598231A (zh) * 2010-05-14 2012-07-18 松下电器产业株式会社 柔性半导体装置及其制造方法以及图像显示装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1194726A (zh) * 1996-06-06 1998-09-30 精工爱普生株式会社 薄膜晶体管的制造方法、使用该方法的液晶显示装置和电子设备
JP2000223712A (ja) * 1999-02-02 2000-08-11 Matsushita Electric Ind Co Ltd 薄膜トランジスタおよびその製造方法
CN1700421A (zh) * 2004-05-21 2005-11-23 中国科学院微电子研究所 一种纳米线宽多晶硅栅刻蚀掩膜图形的形成方法
CN102598231A (zh) * 2010-05-14 2012-07-18 松下电器产业株式会社 柔性半导体装置及其制造方法以及图像显示装置

Similar Documents

Publication Publication Date Title
KR100903484B1 (ko) 실리콘 함유 절연막을 형성하는 ｃｖｄ 방법 및 장치
TWI420574B (zh) 非晶矽膜形成方法及非晶矽膜形成裝置
JP5661523B2 (ja) 成膜方法及び成膜装置
CN101252087B (zh) SiCN膜形成方法及形成装置
US20140264780A1 (en) Adhesion layer to minimize dielectric constant increase with good adhesion strength in a pecvd process
WO2004105115A1 (ja) シリコン窒化膜を形成するｃｖｄ方法
TW201310505A (zh) 非晶矽膜之形成方法與設備
JP5635164B2 (ja) 成膜方法および成膜装置
US6534409B1 (en) Silicon oxide co-deposition/etching process
JP2016082010A (ja) シリコン窒化膜の製造方法及びシリコン窒化膜
CN107526190A (zh) 一种ltps的制备工艺
JPH06240459A (ja) 酸化ケイ素薄膜の形成法
US20150235917A1 (en) Passivation Layer and Method of Making a Passivation Layer
US10153154B2 (en) Process of preparing low dielectric constant thin film layer used in integrated circuit
CN104538286B (zh) 降低以及调节薄膜表面能的方法
CN105633010B (zh) 互连结构及其形成方法
CN104947085B (zh) 掩膜的沉积方法、掩膜及半导体器件的刻蚀方法
WO2022134474A1 (zh) 半导体表面缺陷的处理方法和半导体器件的制备方法
CN104112698B (zh) 一种硬掩膜叠层结构及其制作方法
CN107424920A (zh) 栅极绝缘膜层制作方法
KR100639886B1 (ko) 반도체 소자의 갭 필을 이용하는 유에스지 증착 방법
US6492248B2 (en) Few-particle-induced low-pressure TEOS process
TWI684668B (zh) 氮化矽膜之製造方法及氮化矽膜
TW399236B (en) The improved process of the plasma enhancing- tetraethyloxylsilane (TEOS)
KR20010054676A (ko) 반도체 소자의 층간 절연막 형성방법

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20171229

RJ01 Rejection of invention patent application after publication