CN107507684B - Patch resistor and its manufacturing method - Google Patents
Patch resistor and its manufacturing method Download PDFInfo
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- CN107507684B CN107507684B CN201710442192.5A CN201710442192A CN107507684B CN 107507684 B CN107507684 B CN 107507684B CN 201710442192 A CN201710442192 A CN 201710442192A CN 107507684 B CN107507684 B CN 107507684B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/02—Housing; Enclosing; Embedding; Filling the housing or enclosure
- H01C1/028—Housing; Enclosing; Embedding; Filling the housing or enclosure the resistive element being embedded in insulation with outer enclosing sheath
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
- H01C1/148—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors the terminals embracing or surrounding the resistive element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/006—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistor chips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/02—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistors with envelope or housing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/28—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/28—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
- H01C17/281—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals by thick film techniques
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/28—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
- H01C17/288—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals by thin film techniques
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/006—Thin film resistors
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- Manufacturing & Machinery (AREA)
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- Electromagnetism (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Details Of Resistors (AREA)
- Non-Adjustable Resistors (AREA)
Abstract
The present invention provide a kind of surface electrode that can ensure that welding and end electrode connection reliability is good and the patch resistor and its manufacturing method that can prevent the surface electrode of wire bonding and rear electrode from short circuit occurs.Patch resistor (1) include: insulating substrate (2) surface on separate specified interval formation the first and second surface electrodes (3, 4), by the first and second surface electrodes (3, 4) resistor body (5) bridged, cover the protective film (6) of resistor body (5), it is formed in the rear electrode (7) at insulating substrate (2) back side, and the end electrode (8) etc. that rear electrode (7) and first surface electrode (3) are connected, first surface electrode (3) as welding electrode is formed as section from the surface of insulating substrate (2) to end face in L-shaped, it is formed in the surface of insulating substrate (2) and extends to corner to second surface electrode linear as wire bonding electrode.
Description
Technical field
The present invention relates to the manufacturing methods of the patch resistor of wire bonding connecting-type and above-mentioned patch resistor.
Background technique
In the past, as described in Patent Document 1 as, propose it is a kind of by be connected to resistor body 2 surface electrodes it
One is used as wire bonding electrode, and the end electrode be connected with another surface electrode is used as welding terminal electricity
The patch resistor of pole.
In general, in the case where manufacturing above-mentioned patch resistor, prepare 1 slot segmentation for being formed with clathrate extension and
The large-size substrate of 2 slot segmentations forms multiple surface electricity in a manner of 1 slot segmentation of surfaces transverse in the large-size substrate
Pole, and after the protective film of the multiple resistor bodies and each resistor body of covering that are formed between the surface electrode being connected into pairs, along 1 time
After large-size substrate 1 time segmentation (cutting open) is obtained rectangular substrate by slot segmentation, in a segmentation of the rectangular substrate
End electrode is formed using the methods of sputtering, coating on face, rectangular substrate is then subjected to 2 segmentations along 2 slot segmentations,
To obtain the patch monomer of multiple singualtions.
Existing technical literature
Patent document
Patent document 1: Japanese Patent Laid-Open 9-162002 bulletin
Summary of the invention
The technical problems to be solved by the invention
However, large-size substrate is divided into along 1 time slot segmentation 1 time in above-mentioned existing general manufacturing method
When rectangle, the surface electrode that is flowed into 1 slot segmentation of large-size substrate cuts open at two of rectangular substrate and shows out,
To become a surface electrode of welding and the connectivity raising of end face, but become another surface of wire bonding
Electrode is also overflowed in the end face of rectangular substrate, therefore when the SMD components of completion are installed to circuit substrate, due to
(solder or electric conductivity are viscous for the conductive material for the wiring pattern that will be fixed on circuit substrate that the end surface side of SMD components is overflowed
Tie agent), it is easy that short circuit occurs with the surface electrode of wire bonding.
The present invention is actual conditions in view of the above-mentioned prior art and completes that first purpose is to provide a kind of patch
Sheet resistance device, the reliability that can ensure that the surface electrode of welding is connect with end electrode is good, and will complete
SMD components can prevent that short circuit occurs with the surface electrode of wire bonding when being installed on circuit substrate, and second purpose is
The manufacturing method of above-mentioned SMD components is provided.
Solve the technical solution of technical problem
In order to realize above-mentioned first purpose, patch resistor of the invention includes: the insulating substrate of rectangular shape, In
The surface of the insulating substrate separates the first surface electrode that specified interval is formed and second surface electrode, is formed as to above-mentioned first
Resistor body that surface electrode and second surface electrode are bridged, is formed in the insulation base at the protective film for covering the resistor body
The rear electrode at the back side of plate and the end electrode that the rear electrode and the first surface electrode are connected, it is described
Second surface electrode becomes wire bonding electrode, and the first surface electrode is formed from the surface of the insulating substrate to end face
It is in L-shaped for section, is formed in the surface of the insulating substrate and extends to corner to the second surface electrode linear.
In patch resistor configured as described, the first surface electrode as welding electrode is from insulating substrate
Surface is formed as section in L-shaped to end face, and the second surface electrode as wire bonding electrode is on the surface of insulating substrate
On be formed as linear and extend to corner, thus ensuring that the connectivity of first surface electrode and end electrode, will complete
SMD components can prevent when being installed on circuit substrate and short circuit occurs for second surface electrode.
As for reaching above-mentioned second purpose, one method, the feature of the manufacturing method of patch resistor of the invention
It is, includes: prepares to be formed with the large-size substrate of multiple slot segmentations for separating specified interval and extending parallel on surface
Process；The process of the first surface electrode Chong Die with the slot segmentation is formed on the surface of the large-size substrate；Described
The surface of large-size substrate forms and is set in the second table of the segmentation anticipation line overlap between the slot segmentation of adjacent pair
The process of face electrode；The process for being formed across the resistor body between the first surface electrode and the second surface electrode；In
The process that the back side of the large-size substrate forms rear electrode；The large-size substrate is split along the slot segmentation
The process that the first surface electrode is divided into two；The large-size substrate is envisioned into line doctor blade along the segmentation
Cut off the process that the second surface electrode is divided into two；It is rectangular being split along the slot segmentation
The work for the end electrode that the first surface electrode and the rear electrode are connected is formed on one end face of shape substrate
Sequence.
It is formed as described above on the surface of large-size substrate across specified interval and multiple segmentations for extending parallel to
Slot, and preset between adjacent slot segmentation each segmentation anticipation line, on the surface of the large-size substrate along with point
It cuts the orthogonal direction of slot and alternately forms the first surface electrode Chong Die with slot segmentation and the second table with segmentation anticipation line overlap
After the electrode of face, large-size substrate is divided along slot segmentation and obtains rectangular substrate along segmentation anticipation wire cutting, then
Since first surface electrode flows into slot segmentation, along the first surface electrode of slot segmentation segmentation from the surface of rectangular substrate
Be formed as section in L-shaped to an end face, and will not be in rectangle base along the second surface electrode of segmentation anticipation wire cutting
Another end face of plate is overflowed, therefore forms end electrode in an end face of rectangular substrate in subsequent process, thus
It can ensure that the reliability of the connection of first surface electrode and end electrode is good, and can be in the SMD components peace that will be completed
It prevents that short circuit occurs with second surface electrode when being attached on circuit substrate.
As for reaching another method of above-mentioned second purpose, the spy of the manufacturing method of patch resistor of the invention
Sign is, includes: preparation is alternately formed with the surface segmentation slot extended parallel to and the back side on surface and the back side face Liang Ge
The process of the large-size substrate of slot segmentation；First Chong Die with the surface segmentation slot is formed on the surface of the large-size substrate
The process of the second surface electrode of surface electrode and the imaginary line overlap projected with the back side slot segmentation；It is developed across
The process of resistor body between the first surface electrode and the second surface electrode；In the back side quilt of the large-size substrate
The process that the region that the back side slot segmentation clips forms rear electrode；By the way that the large-size substrate is divided along the surface
Slot is cut to be split to obtain the work for the double rectangular substrates for connecting 2 rectangular segments via the back side slot segmentation
Sequence；The end face that the first surface electrode and the rear electrode are connected is formed in two end faces of double rectangular substrates
The process of electrode；And double rectangular substrates are split along the back side slot segmentation to obtain rectangular substrate
Process.
It is pre-formed as described above on the surface of large-size substrate and the back side face Liang Ge with alternate positional relationship flat
The surface segmentation slot and back side slot segmentation extended capablely, on the surface of the large-size substrate along the direction orthogonal with each slot segmentation
Alternately form the first surface electrode Chong Die with surface segmentation slot and the imaginary line overlap projected with back side slot segmentation
After second surface electrode, large-size substrate is split along surface segmentation slot to obtain double rectangular substrates, then due to
The end of first surface electrode is overflowed on two divisional planes of the surface segmentation slot along double rectangular substrates, if therefore at it
End electrode is formed on two divisional planes of double rectangular substrates in process afterwards, then can ensure that first surface electrode and end face
The reliability of the connection of electrode is good.Then, double rectangular substrates are divided into two to obtain rectangle along back side slot segmentation
Substrate, then second surface electrode does not overflow on the divisional plane along the back side slot segmentation of rectangular substrate, therefore will be complete
At SMD components be installed on circuit substrate when, can prevent and second surface electrode occur short circuit.
Invention effect
In accordance with the invention it is possible to the manufacturing method of a kind of patch resistor and this patch resistor is provided, patch electricity
Resistance device can ensure that as the first surface electrode of welding electrode and the connectivity of end electrode, in the SMD components that will be completed
It can prevent that short circuit occurs with the second surface electrode as wire bonding electrode when being installed on circuit substrate.
Detailed description of the invention
Fig. 1 is the top view of patch resistor involved in the 1st embodiment of the invention.
Fig. 2 is the cross-sectional view along II-II line direction in Fig. 1.
Fig. 3 is the explanatory diagram for indicating the state being mounted on the patch resistor on circuit substrate.
Fig. 4 (a)~(d) is the explanatory diagram for indicating the manufacturing process of the patch resistor.
Fig. 5 (a)~(d) is the explanatory diagram for indicating the manufacturing process of the patch resistor.
Fig. 6 (a)~(d) is the explanatory diagram for indicating the manufacturing process of the patch resistor.
Fig. 7 (a)~(d) is the explanatory diagram for indicating the manufacturing process of the patch resistor.
Fig. 8 is the cross-sectional view of patch resistor involved in the 2nd embodiment of the invention.
Fig. 9 (a)~(d) is the explanatory diagram for indicating the manufacturing process of the patch resistor.
Figure 10 (a)~(d) is the explanatory diagram for indicating the manufacturing process of the patch resistor.
Figure 11 (a)~(c) is the explanatory diagram for indicating the manufacturing process of the patch resistor.
Figure 12 (a)~(c) is the explanatory diagram for indicating the manufacturing process of the patch resistor.
Figure 13 (a)~(b) is the explanatory diagram for indicating the manufacturing process of the patch resistor.
Figure 14 (a)~(b) is the explanatory diagram for indicating the manufacturing process of the patch resistor.
Specific embodiment
The embodiment of invention is described with reference to the accompanying drawings, as depicted in figs. 1 and 2, the 1st embodiment of the invention
Patch resistor 1 include: the insulating substrate 2 of rectangular shape, on the surface of insulating substrate 2 separate the of specified interval formation
One surface electrode 3 and second surface electrode 4 are formed as the resistance for bridging above-mentioned first surface electrode 3 and second surface electrode 4
Body 5, cover resistor body 5 protective film 6, be formed in insulating substrate 2 the back side rear electrode 7, to rear electrode 7 and the first table
End electrode 8 that face electrode 3 is connected, covering first surface electrode 3, rear electrode 7, end electrode 8 exposed portion
Second external electrode 10 of the exposed portion of the first external electrode 9 and covering second surface electrode 4.
Insulating substrate 2 be by the aluminum oxide substrate that is formed of ceramics, the insulating substrate 2 be by aftermentioned large-size substrate along
The first slot segmentation (and segmentation anticipation line) and the second slot segmentation of clathrate extension are split to obtain multiple in length and breadth
Insulating substrate.
Ag-Pd thickener by being screen printed onto the surface of insulating substrate 2 by first surface electrode 3 and second surface electrode 4
It goes up and is dried, be burnt into obtain, relative to first surface electrode 3, second surface electrode 4 forms very big.Herein,
One surface electrode 3 is formed as section in L-shaped, at the end of insulating substrate 2 from the surface of insulating substrate 2 to the end face in diagram left side
Face top is formed with the corner portion 2a of the taper of the end entrance for first surface electrode 3.In contrast, second surface electrode 4
It will not be overflowed in the end face on the right side of the diagram of insulating substrate 2, the second surface electrode 4 is linear on the surface of insulating substrate 2
(overlook I font) formed and extend to corner.
Resistor body 5 is that the resistor pastes such as ruthenium-oxide are screen printed on the surface of insulating substrate 2 and are dried, are burnt into
Come what is obtained.The both ends of the longitudinal direction of the resistor body 5 are Chong Die with first surface electrode 3 and second surface electrode 4, although saving
Sketch map shows, but the trim slots for adjusting resistance value are formed on resistor body 5.
Protective film 6 is formed by 2 layers of structure of priming coat and external coating, wherein priming coat be by glass paste silk-screen printing simultaneously
It is dried, is burnt into obtain, external coating is to obtain epoxylite thickener silk-screen printing and being heating and curing.
Rear electrode 7 be on the back side of insulating substrate 2 by the silk-screen printing of Ag-Pd thickener and be dried, be burnt into come
It arrives, which is formed in the long side direction both ends at the back side of insulating substrate 2.
End electrode 8 is to be sputtered on an end face of insulating substrate 2 to Ni-Cr etc. to obtain, end face electricity
Pole 8 is formed on the end face on the left of the diagram of insulating substrate 2 and first surface electrode 3 and rear electrode 7 is connected.
First external electrode 9 and the second external electrode 10 are formed by 2 layers of structure of barrier layer and external connection layer, wherein hindering
Parietal layer is by the Ni coating formed is electroplated, and external connection layer is by the Au coating formed is electroplated.
As shown in figure 3, being constituted as described above by being installed on the circuit substrate 20 and with welding and wire bonding
Patch resistor 1.That is, being set in the state that wiring pattern 21 on circuit substrate 20 is separate with wiring pattern (not shown)
It sets, in the state of on the wiring pattern 21 that patch resistor 1 is mounted therein, covers first surface electrode 3, rear electrode 7
And the first external electrode 9 of end electrode 8 is fixed using solder 22, and covers the second of second surface electrode 4
External electrode 10 is connected to other wiring patterns via lead 23.The lead 23 is formed by gold, aluminium etc., passes through ultrasonic bonding point
It is not fixed on the second external electrode 10 and wiring pattern.
Then, for the manufacturing method of the patch resistor 1 constituted as described above, referring to Fig. 4 (a)~(d) to Fig. 7
(a)~(d) is illustrated.In addition, Fig. 4 (a)~(d) is the top view for showing large-size substrate, Fig. 5 (a)~(d) is to show figure
The cross-sectional view along X1-X1 line of 4 (a)~(d), Fig. 6 (a)~(d) are the top views for showing rectangular substrate Yu patch monomer,
Fig. 7 (a)~(d) is to show Fig. 6 (a)~(d) along the cross-sectional view of X2-X2 line.
Firstly, preparing the large-size substrate 11 for obtaining multiple insulating substrates 2 as shown in Fig. 4 (a) and Fig. 5 (a).In
The first slot segmentation 12 and the second slot segmentation 13 that section is in the shape of the letter V are set to clathrate on the surface of the large-size substrate 11, and
And set on the position that the first slot segmentation of adjacent pair 12 is divided into two and envision line M as the segmentation of imaginary line, it utilizes
Pairs of first slot segmentation 12 and segmentation anticipation line M and the second slot segmentation 13 come the grid one by one of the oblong-shaped divided at
For a patch forming region.In addition, multiple patch forming regions are representatively illustrated in Fig. 4, but in practice for phase
When in the large-size substrate 11 of multiple patch forming regions, each process described below carries out together.
That is, in the surface of large-size substrate 11 and back side silk-screen printing Ag-Pd thickener and being dried, being burnt into, thus such as
Shown in Fig. 4 (b) and Fig. 5 (b), the is alternately formed along the direction of crosscutting first slot segmentation 12 on the surface of large-size substrate 11
One surface electrode 3 and second surface electrode 4, and at the back side of large-size substrate 11 along the direction of crosscutting first slot segmentation 12
Form the rear electrode 7 (electrode forming process) of band-like extension.
Herein, first surface electrode 3 is formed as Chong Die with the first slot segmentation 12, therefore first surface electrode 3 flows into
In one slot segmentation 12.Second surface electrode 4 is formed on large-size substrate 11 with uniform thickness, and divides anticipation line M overlapping,
The size of second surface electrode 4 is formed as 2 times of about first surface electrode 3.That is, if clipping segmentation in advance in observation Fig. 4 (b)
Think line M continuous 2 patch forming regions in the lateral direction, then the central portion in the region forms biggish second table of area
Face electrode 4 forms the lesser first surface electrode 3 of area in the left and right sides for clipping the second surface electrode 4.
Then, after the resistor bodies thickeners such as the surface screen-printed ruthenium-oxide of large-size substrate 11, it is dried, is burnt
At so that formation is connected to the more of pairs of first surface electrode 3 and second surface electrode 4 as shown in Fig. 4 (c) and Fig. 5 (c)
A resistor body 5 (resistor body formation process).
Then, it by the surface screen-printed glass paste in large-size substrate 11, and is dried, is burnt into, thus
After forming the priming coat of covering resistor body 5, trim slots (illustration omitted) is formed on the priming coat to adjust resistance value.Then,
Pass through the screen print epoxy resinoid thickener in a manner of covering priming coat and be heating and curing, thus such as Fig. 4 (d) and Fig. 5
(d) shown in, the protective film 6 (protective film formation process) formed by 2 layers of structure of priming coat and external coating is formed.
Process so far is handling together for large-size substrate 11, then by right along the first slot segmentation 12
Large-size substrate 11 is split and (cuts open), and is carried out to large-size substrate 11 using doctor blade along segmentation anticipation line M
Cutting, to obtain multiple rectangular substrate 11A (1 segmentation work from large-size substrate 11 as shown in Fig. 6 (a) and Fig. 7 (a)
Sequence).
Along the first slot segmentation 12 first surface electrode 3 is divided into two using this 1 time segmentation, first surface electrode 3 from
The surface of rectangular substrate 11A is formed as section in L-shaped to an end face.On the other hand, by along segmentation anticipation line M into
Row cutting is to which second surface electrode 4 to be divided into two, therefore second surface electrode 4 will not be from the another of rectangular substrate 11A
It overflows a end face.In addition, the corner portion 2a of insulating substrate 2 shown in Fig. 2 is the first slot segmentation that this 1 time segmentation truncation obtains
12 inclined surface.
Then, by sputtering Ni-Cr etc. on a divisional plane of rectangular substrate 11A, thus such as Fig. 6 (b) and Fig. 7
(b) shown in, end electrode 8 (end electrode formation process) is formed on an end face of rectangular substrate 11A.Utilize the end face
Electrode 8, corresponding first surface electrode 3 and rear electrode 7 on the surface and the back side face Liang Ge of rectangular substrate 11A are connected,
The Formation cross-section on the surface to end face from rectangular substrate 11A of first surface electrode 3 is in L-shaped, thus ensuring that end face is electric
The reliability that pole 8 is connect with first surface electrode 3 is good.
Then, by being split (2 segmentations) to rectangular substrate 11A along the second slot segmentation 13, thus such as Fig. 6
(c) and shown in Fig. 7 (c), multiple patch monomer 11B (2 times with the same size of patch resistor 1 are obtained from rectangular substrate 11A
Segmentation process).
Then, the plating such as Ni is implemented by the patch monomer 11B to singualtion, thus being respectively formed covering first surface
The prime coat of the exposed portion of electrode 3 and rear electrode 7 and end electrode 8 and the exposed division for covering second surface electrode 4
After the prime coat divided, implements the plating such as Au, Sn, Cu to cover these priming coats and forms external connection layer, thus such as Fig. 6 (d)
With shown in Fig. 7 (d), the first external electrode 9 and the second external electrode of the 2 layers of structure formed by coating and external connection layer are constituted
10, complete patch resistor 1 shown in FIG. 1.
As described above, in the patch resistor 1 of the 1st embodiment, as welding electrode first surface electrode 3 from
The surface of insulating substrate 2 is formed as section in L-shaped to end face, and the second surface electrode 4 as wire bonding electrode is exhausted
It is not overflowed on the end face of edge substrate 2, which is formed as linear and is extended on the surface of insulating substrate 2
To corner, thus ensuring that the connectivity of first surface electrode 3 and end electrode 8, is installed to by the SMD components of completion
It can prevent that short circuit occurs with second surface electrode 4 when on circuit substrate.
In the manufacturing method of the patch resistor 1 of the 1st embodiment, is formed and separated on the surface of large-size substrate 11
Multiple first slot segmentations 12 that specified interval extends parallel to, and in the position that the first adjacent slot segmentation 12 is divided into two
On preset as imaginary line segmentation envision line M, on the surface of the large-size substrate 11 along with the first slot segmentation 12
Orthogonal direction alternately forms the first surface electrode 3 Chong Die with the first slot segmentation 12 and Chong Die with segmentation anticipation line M the
After two surface electrodes 4, large-size substrate 11 is divided along the first slot segmentation 12 and is obtained along segmentation anticipation line M cutting
Rectangular substrate 11A, therefore along the first slot segmentation 12 obtained first surface electrode 3 of segmentation from the table of rectangular substrate 11A
Face is formed as section in L-shaped to an end face, and the second surface electrode 4 cut along segmentation anticipation line M will not be
It overflows another end face of rectangular substrate 11A.Thus, pass through an end in subsequent process in rectangular substrate 11A
Face forms end electrode 8, good so as to the reliability that connect first surface electrode 3 with end electrode 8, and will be complete
At SMD components be installed on circuit substrate when can prevent that short circuit occurs with second surface electrode 4, can be formed for carry out
The case where engagement etc. the biggish second surface electrode 4 of advantageous area.
Fig. 8 is the cross-sectional view for indicating patch resistor 30 involved in the 2nd embodiment of the invention, with Fig. 1,2 couples
The part answered marks identical label.
Difference of the patch resistor 30 shown in Fig. 8 from the patch resistor 1 of the 1st embodiment is: from insulation
The end face on the back side of substrate 2 to diagram right side is formed with the corner portion 2b of cone cell, and structure in addition to this is essentially identical.The chamfering
Portion 2b is identical as the shape of corner portion 2a formed from the surface of insulating substrate 2 to the end face in diagram left side, the side of rear electrode 7
Edge is set in the position far from corner portion 2b.
Then, for the manufacturing method of the patch resistor 30 of the 2nd embodiment, referring to Fig. 9 (a)~(d) to Figure 14
(a), (b) is illustrated.Fig. 9 (a)~(d) is the top view for showing large-size substrate, and Figure 10 (a)~(d) is to show Fig. 9 (a)
The cross-sectional view along X1-X1 line of~(d), Figure 11 (a)~(c) are the vertical views for showing double rectangular substrates and rectangular substrate
Figure, Figure 12 (a)~(c) is to show Figure 11 (a)~(c) along the cross-sectional view of X2-X2 line, and Figure 13 (a), (b) are patch monomers
Top view, Figure 14 (a), (b) are the cross-sectional views for showing the X3-X3 line along Figure 13 (a), (b).
Firstly, preparing the large-size substrate 40 for obtaining multiple insulating substrates 2 as shown in Fig. 9 (a) and Figure 10 (a).In
The first surface slot segmentation 41 and the second slot segmentation that section is in the shape of the letter V are set to clathrate on the surface of the large-size substrate 40
42, large-size substrate 40 the back side and position setting section that adjacent pair first surface slot segmentation 41 is divided into two at
First back side slot segmentation 43 of V-shaped.That is, the large-size substrate 40 and the large-size substrate 11 used in the 1st embodiment
The difference of (referring to Fig. 4) is: the large-size substrate 11 of the 1st embodiment is by adjacent pair first surface slot segmentation 41
Setting segmentation anticipation line M on the position being divided into two, but line is being envisioned with segmentation in the large-size substrate 40 of the 2nd embodiment
The first back side slot segmentation 43 is arranged in the corresponding back side of M.
Moreover, in the surface of the large-size substrate 40 of above structure and back side silk-screen printing Ag-Pd thickener and being done
Dry, firing, thus as shown in Fig. 9 (b) and Figure 10 (b), on the surface of large-size substrate 40 along crosscutting first surface slot segmentation
41 direction alternately forms first surface electrode 3 and second surface electrode 4, and at the back side of large-size substrate 40 by
The region that one back side slot segmentation 43 clips forms rear electrode 7 (electrode forming process).
Herein, first surface electrode 3 is formed as Chong Die with first surface slot segmentation 41, therefore first surface electrode 3 flows into
To first surface slot segmentation 41, but on the flat surface of large-size substrate 40 second surface electrode 4 with uniform thickness
It is formed.Rear electrode 7 is formed on the position of the first back side slot segmentation 43 slightly away, in the flat back of large-size substrate 40
Face forms rear electrode 7 with uniform thickness.
Then, after the resistor bodies thickeners such as the surface screen-printed ruthenium-oxide of large-size substrate 40, it is dried, is burnt
At so that formation is connected to the more of pairs of first surface electrode 3 and second surface electrode 4 as shown in Fig. 9 (c) and Figure 10 (c)
A resistor body 5 (resistor body formation process).
Then, it by the surface screen-printed glass paste in large-size substrate 40, and is dried, is burnt into, thus
After forming the priming coat of covering resistor body 5, trim slots (illustration omitted) is formed on the priming coat to adjust resistance value.Then,
Pass through the screen print epoxy resinoid thickener in a manner of covering priming coat and be heating and curing, thus such as Fig. 9 (d) and Figure 10
(d) shown in, the protective film 6 (protective film formation process) formed by 2 layers of structure of priming coat and external coating is formed.
Process so far is handling together for large-size substrate 40, then by along first surface slot segmentation
41 pairs of large-size substrates 40 carry out 1 segmentation, to obtain from large-size substrate 40 multiple as shown in Figure 11 (a) and Figure 12 (a)
Double rectangular substrate 40A (1 segmentation process).At this point, only to the first surface slot segmentation 41 for passing through the extension of first surface electrode 3
1 segmentation is carried out, the first back side slot segmentation 43 positioned at the back side of second surface electrode 4 is divided without 1 time, therefore double long
Square substrate 40A is in the state that the second surface electrode 4 that 2 rectangular segments retain and not being divided is connected.And
And first surface electrode 3 is divided into two along first surface slot segmentation 41 using this 1 time segmentation, therefore first surface electrode 3
Be formed as section from the surface of double rectangular substrate 40A to end face in L-shaped.
Then, by sputtering Ni-Cr etc. on opposite two divisional plane of double rectangular substrate 40A, thus such as Figure 11
(b) and shown in Figure 12 (b), end electrode 8 is formed on the end face of the left and right of double rectangular substrate 40A two, utilizes above-mentioned end face
The corresponding first surface electrode 3 and rear electrode 7 in the surface of double rectangular substrate 40A and the back side face Liang Ge are connected electrode 8
(end electrode formation process).At this point, first surface electrode 3 is formed as section to end face from the surface of double rectangular substrate 40A
In L-shaped, thus ensuring that the reliability that end electrode 8 is connect with first surface electrode 3 is good.In addition, at above-mentioned end
In the electrode forming process of face, end face electricity is formed using sputtering for the multiple double rectangular substrate 40A being overlapped in the up-down direction
Pole 8 maintains the symmetry of left and right in double rectangular substrate 40A at this time, therefore each double rectangular substrate 40A can be made to be arranged in
Horizontal attitude can form together end electrode 8 using sputtering on the divisional plane of double rectangular substrate 40A without tilting.
Then, by being split along the first back side slot segmentation 43 to double rectangular substrate 40A, thus such as Figure 11 (c)
With shown in Figure 12 (c), two rectangular substrate 40B (2 segmentation process) is obtained from 1 double rectangular substrate 40A.Although passing through
Second surface electrode 4 is divided into two by this 2 times segmentations, but second surface electrode 4 is formed in the flat of double rectangular substrate 40A
On surface, therefore second surface electrode 4 will not overflow on the divisional plane of rectangular substrate 40B.That is, rectangular substrate 40B has
There is the end electrode 8 formed on one face in end electrode formation process, but is not dividing in 2 segmentation process
Form end electrode on another end face of rectangular substrate 40B out, so that it is guaranteed that the end face (divisional plane of 2 segmentations) with
There is specified interval between second surface electrode 4.In addition, the corner portion 2b of insulating substrate 2 shown in fig. 8 is to utilize this 2 times
One inclined surface of the first back side slot segmentation 43 that segmentation truncation obtains.
Then, by carrying out 3 segmentations to rectangular substrate 40B along the second slot segmentation 42, thus such as Figure 13 (a) and figure
Shown in 14 (a), multiple patch monomer 40C (3 segmentations with the same size of patch resistor 30 are obtained from rectangular substrate 40B
Process).
Then, the plating such as Ni is implemented by the patch monomer 40C for singualtion, thus being respectively formed the first table of covering
The prime coat of the exposed portion of face electrode 3 and rear electrode 7 and end electrode 8 and the exposing for covering second surface electrode 4
After partial prime coat, implement the plating such as Au, Sn, Cu in a manner of covering above-mentioned prime coat to form external connection layer, thus
As shown in Figure 13 (b) and Figure 14 (b), the first external electrode 9 of 2 layers of structure that formation is made of coating and external connection layer and the
Two external electrodes 10 (external electrode formation process), to complete patch resistor 30 shown in Fig. 8.
As described above, in the manufacturing method of the patch resistor 30 of the 2nd embodiment, in large-size substrate
41 He of first surface slot segmentation extended parallel to is pre-formed with alternate positional relationship on 40 surface and the back side face Liang Ge
First back side slot segmentation 43 forms the first surface electricity Chong Die with first surface slot segmentation 41 on the surface of the large-size substrate 40
After the second surface electrode 4 of pole 3 and the imaginary line overlap obtained with the projection of the first back side slot segmentation 43, by large-size substrate
40 carry out 1 segmentation to obtain double rectangular substrate 40A, due in double rectangular substrates along first surface slot segmentation 41
40A along first surface slot segmentation 41 divide two divisional planes on have first surface electrode 3 end overflow, if therefore
End electrode 8 is formed in subsequent process on two divisional planes of double rectangular substrate 40A, then can ensure that first surface electrode
3 reliabilities that connect with end electrode 8 are good.Then, double rectangular substrate 40A mono- are divided along the first back side slot segmentation 43
Rectangular substrate 40B is obtained for two, due on the divisional plane along the segmentation of first back side slot segmentation 43 of rectangular substrate 40B
There is no the spilling of second surface electrode 4, therefore when the SMD components of completion are installed on circuit substrate, can prevent and second
Short circuit occurs for surface electrode 4.Thus, the reliability that first surface electrode 3 can be made to connect with end electrode 8 is good, and
Can prevent that short circuit occurs with second surface electrode 4 when the SMD components of completion are installed on circuit substrate, can be formed for
The biggish second surface electrode 4 of the advantageous area such as the case where being engaged.
Label declaration
1,30 patch resistor
2 insulating substrates
2a, 2b corner portion
3 first surface electrodes
4 second surface electrodes
5 resistor bodies
6 protective films
7 rear electrodes
8 end electrodes
9 first external electrodes
10 second external electrodes
11 large-size substrates
11A rectangular substrate
11B patch monomer
12 first slot segmentations
13 second slot segmentations
20 circuit substrates
21 wiring patterns
22 solders
23 leads
41 first surface slot segmentations
42 second slot segmentations
43 first back side slot segmentations
40 large-size substrates
The bis- rectangular substrates of 40A
40B rectangular substrate
40C patch monomer
M segmentation anticipation line
Claims (3)
1. a kind of patch resistor characterized by comprising
The insulating substrate of rectangular shape,
The surface of the insulating substrate separate specified interval formation first surface electrode and second surface electrode,
Be formed as the resistor body for bridging the first surface electrode and the second surface electrode,
Cover the resistor body protective film,
Be formed in the back side of the insulating substrate rear electrode and
By the end electrode of the rear electrode and the first surface electrode conduction,
The first surface electrode becomes welding electrode, and
The second surface electrode becomes wire bonding electrode,
It is in L-shaped that the first surface electrode, which is formed as section from the surface of the insulating substrate to end face,
It is formed in the surface of the insulating substrate and extends to corner to the second surface electrode linear, and will not be described
It overflows the end face of insulating substrate.
2. a kind of manufacturing method of patch resistor, characterized by comprising:
Prepare to be formed with the process of the large-size substrates of multiple slot segmentations for separating specified interval and extending parallel on surface；
The process of the first surface electrode Chong Die with the slot segmentation is formed on the surface of the large-size substrate；
Line overlap is envisioned in the segmentation that the surface of the large-size substrate is formed and is set between slot segmentation described in adjacent pair
Second surface electrode process；
The process for being developed across the resistor body between the first surface electrode and the second surface electrode；
In the process that the back side of the large-size substrate forms rear electrode；
The large-size substrate is split along the slot segmentation to which the first surface electrode be divided into two, institute is made
It states first surface electrode and is formed as the process that section is in L-shaped from the surface of the large-size substrate to end face；
The large-size substrate is cut off with doctor blade by the second surface electrode along segmentation anticipation line
It is divided into two, the process that overflow the second surface electrode will not in the end face of the large-size substrate；And
It is formed on an end face of the rectangular substrate being split along the slot segmentation by the first surface electricity
The process of the end electrode of pole and rear electrode conducting.
3. a kind of manufacturing method of patch resistor, characterized by comprising:
Preparation is alternately formed with the big of the surface segmentation slot and back side slot segmentation extended in parallel on surface and the back side face Liang Ge
The process of size substrate；
The surface of the large-size substrate formed the first surface electrode Chong Die with the surface segmentation slot and with the back side
The process of the second surface electrode for the imaginary line overlap that slot segmentation projects；
The process for being developed across the resistor body between the first surface electrode and the second surface electrode；
In the process that the region clipped by the back side slot segmentation at the back side of the large-size substrate forms rear electrode；
By the way that the large-size substrate to be split along the surface segmentation slot, make the first surface electrode from described big
The surface of size substrate is formed as section in L-shaped to end face, to obtain 2 rectangular segments via the back side slot segmentation
The process of connected double rectangular substrates；
The end that the first surface electrode and the rear electrode are connected is formed in two end faces of double rectangular substrates
The process of face electrode；And
Double rectangular substrates are split along the back side slot segmentation, make the second surface electrode will not be described
The end face of double rectangular substrates is overflowed, thus the process for obtaining rectangular substrate.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016118059A JP2017224677A (en) | 2016-06-14 | 2016-06-14 | Chip resistor and manufacturing method thereof |
| JP2016-118059 | 2016-06-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107507684A CN107507684A (en) | 2017-12-22 |
| CN107507684B true CN107507684B (en) | 2019-11-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710442192.5A Expired - Fee Related CN107507684B (en) | 2016-06-14 | 2017-06-13 | Patch resistor and its manufacturing method |
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| Country | Link |
|---|---|
| JP (1) | JP2017224677A (en) |
| CN (1) | CN107507684B (en) |
| DE (1) | DE102017112650A1 (en) |
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| JPWO2021095535A1 (en) * | 2019-11-12 | 2021-05-20 | ||
| CN110867636B (en) * | 2019-11-25 | 2021-03-19 | 苏州市新诚氏通讯电子股份有限公司 | Aluminum nitride micro load sheet |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09162002A (en) * | 1995-12-07 | 1997-06-20 | Koa Corp | Chip-shaped electronic component and fabrication thereof |
| JP2001167914A (en) * | 1999-12-08 | 2001-06-22 | Rohm Co Ltd | Dividing trench shape of insulating substrate |
| CN2569298Y (en) * | 2002-09-11 | 2003-08-27 | 上海维安热电材料股份有限公司 | High molecular thermosensitive resistor for surface adhesive mounting |
| CN1977347A (en) * | 2004-03-31 | 2007-06-06 | 三菱麻铁里亚尔株式会社 | Chip resistor |
| CN101189688A (en) * | 2005-06-06 | 2008-05-28 | 兴亚株式会社 | Chip resistor and its manufacturing method |
-
2016
- 2016-06-14 JP JP2016118059A patent/JP2017224677A/en active Pending
-
2017
- 2017-06-08 DE DE102017112650.3A patent/DE102017112650A1/en not_active Withdrawn
- 2017-06-13 CN CN201710442192.5A patent/CN107507684B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09162002A (en) * | 1995-12-07 | 1997-06-20 | Koa Corp | Chip-shaped electronic component and fabrication thereof |
| JP2001167914A (en) * | 1999-12-08 | 2001-06-22 | Rohm Co Ltd | Dividing trench shape of insulating substrate |
| CN2569298Y (en) * | 2002-09-11 | 2003-08-27 | 上海维安热电材料股份有限公司 | High molecular thermosensitive resistor for surface adhesive mounting |
| CN1977347A (en) * | 2004-03-31 | 2007-06-06 | 三菱麻铁里亚尔株式会社 | Chip resistor |
| CN101189688A (en) * | 2005-06-06 | 2008-05-28 | 兴亚株式会社 | Chip resistor and its manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2017224677A (en) | 2017-12-21 |
| DE102017112650A1 (en) | 2017-12-14 |
| CN107507684A (en) | 2017-12-22 |
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