CN107507684A - Patch resistor and its manufacture method - Google Patents

Patch resistor and its manufacture method Download PDF

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Publication number
CN107507684A
CN107507684A CN201710442192.5A CN201710442192A CN107507684A CN 107507684 A CN107507684 A CN 107507684A CN 201710442192 A CN201710442192 A CN 201710442192A CN 107507684 A CN107507684 A CN 107507684A
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China
Prior art keywords
electrode
surface electrode
substrate
segmentation
back side
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CN201710442192.5A
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CN107507684B (en
Inventor
松本健太郎
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OKIAKA CO Ltd
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OKIAKA CO Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C1/00Details
    • H01C1/14Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C1/00Details
    • H01C1/02Housing; Enclosing; Embedding; Filling the housing or enclosure
    • H01C1/028Housing; Enclosing; Embedding; Filling the housing or enclosure the resistive element being embedded in insulation with outer enclosing sheath
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C1/00Details
    • H01C1/14Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
    • H01C1/148Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors the terminals embracing or surrounding the resistive element
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/006Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistor chips
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/02Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistors with envelope or housing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/28Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/28Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
    • H01C17/281Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals by thick film techniques
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/28Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
    • H01C17/288Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals by thin film techniques
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/006Thin film resistors

Abstract

The present invention provides a kind of connection reliability of the surface electrode that can ensure that welding and end electrode well and can prevent the surface electrode of wire bonding and backplate from the patch resistor and its manufacture method of short circuit occurs.Patch resistor (1) includes:The first and second surface electrodes (3 of predetermined distance formation are separated on the surface of insulated substrate (2), 4), by the first and second surface electrodes (3, 4) resistive element (5) of bridge joint, cover the diaphragm (6) of resistive element (5), form the backplate (7) at insulated substrate (2) back side, and end electrode (8) for turning on backplate (7) and first surface electrode (3) etc., it is in L-shaped that first surface electrode (3) as welding electrode, which is formed as section from the surface of insulated substrate (2) to end face, as wire bonding electrode second surface electrode linear formed on the surface of insulated substrate (2) and extend to corner.

Description

Patch resistor and its manufacture method
Technical field
The present invention relates to the manufacture method of the patch resistor of wire bonding connecting-type and above-mentioned patch resistor.
Background technology
In the past, as described in Patent Document 1, it is proposed that it is a kind of by be connected to resistive element 2 surface electrodes it One is used as wire bonding electrode, and the end electrode turned on another surface electrode is used as into welding terminal electricity The patch resistor of pole.
Generally, in the case where manufacturing above-mentioned patch resistor, prepare 1 slot segmentation formed with clathrate extension and The large-size substrate of 2 slot segmentations, multiple surface electricity are formed in a manner of 1 slot segmentation of surfaces transverse in the large-size substrate Pole, and after the diaphragm of multiple resistive elements between forming the surface electrode being connected into pairs and each resistive element of covering, along 1 time After 1 segmentation (cutting open) of large-size substrate is obtained rectangular substrate by slot segmentation, in a segmentation of the rectangular substrate End electrode is formed using the methods of sputtering, coating on face, rectangular substrate is then subjected to 2 segmentations along 2 slot segmentations, So as to obtain the paster monomer of multiple singualtions.
Prior art literature
Patent document
Patent document 1:Japanese Patent Laid-Open 9-162002 publications
The content of the invention
The technical problems to be solved by the invention
However, in above-mentioned existing general manufacture method, large-size substrate is divided into for 1 time along 1 slot segmentation During rectangle, the surface electrode that is flowed into 1 slot segmentation of large-size substrate cuts open at two of rectangular substrate and showed out, So as to which a surface electrode as welding and the connectivity of end face improve, but as another surface of wire bonding Electrode also overflows in the end face of rectangular substrate, therefore when the SMD components of completion are installed into circuit substrate, due to The conductive material for the wiring pattern that will be fixed on circuit substrate that the end face side of SMD components is overflowed (glue by solder or electric conductivity Tie agent), easily short circuit occurs for the surface electrode with wire bonding.
The present invention be in view of the actual conditions of above-mentioned prior art and complete, its first purpose is to provide a kind of patch Sheet resistance device, it is able to ensure that the reliability that the surface electrode of welding is connected with end electrode is good, and by completion SMD components can prevent when being installed on circuit substrate The manufacture method of above-mentioned SMD components is provided.
Solves the technical scheme of technical problem
In order to realize above-mentioned first purpose, patch resistor of the invention includes:The insulated substrate of rectangular shape, The surface of the insulated substrate separates the first surface electrode of predetermined distance formation and second surface electrode, is formed as to above-mentioned first Resistive element that surface electrode and second surface electrode are bridged, the diaphragm for covering the resistive element, formed in the insulation base The backplate at the back side of plate and the end electrode turned on to the backplate and the first surface electrode, it is described Second surface electrode turns into wire bonding electrode, and the first surface electrode is formed from the surface of the insulated substrate to end face It is in L-shaped for section, is formed on the surface of the insulated substrate and extend to corner the second surface electrode linear.
In patch resistor configured as described, the first surface electrode as welding electrode is from insulated substrate It is in L-shaped that surface is formed as section to end face, and the second surface electrode as wire bonding electrode is on the surface of insulated substrate On be formed as linear and extend to corner, thus ensuring that the connectivity of first surface electrode and end electrode, will be completed SMD components can prevent when being installed in circuit substrate and short circuit occurs for second surface electrode.
As for reaching above-mentioned second purpose, one method, the feature of the manufacture method of patch resistor of the invention It is, comprising:Prepare in large-size substrate of the surface formed with the multiple slot segmentations for separating predetermined distance and extending parallel to Process;The process that the first surface electrode overlapping with the slot segmentation is formed on the surface of the large-size substrate;Described The surface of large-size substrate forms and is set in the second table of the segmentation anticipation line overlap between the slot segmentation of adjacent pair The process of face electrode;The process for the resistive element being formed across between the first surface electrode and the second surface electrode; The process that the back side of the large-size substrate forms backplate;The large-size substrate is split along the slot segmentation The process that the first surface electrode is divided into two;The large-size substrate is envisioned into line doctor blade along the segmentation Cut off the process that the second surface electrode is divided into two;It is rectangular being split to obtain along the slot segmentation The work of the end electrode turned on to the first surface electrode and the backplate is formed on one end face of shape substrate Sequence.
Formed as described above on the surface of large-size substrate across predetermined distance and multiple segmentations for extending parallel to Groove, and each segmentation anticipation line is preset between adjacent slot segmentation, along with dividing on the surface of the large-size substrate Cut the orthogonal direction of groove and alternately form the first surface electrode overlapping with slot segmentation and the second table with segmentation anticipation line overlap After the electrode of face, large-size substrate is split along slot segmentation and obtains rectangular substrate along segmentation anticipation wire cutting, then Because first surface electrode flows into slot segmentation, thus along slot segmentation segmentation first surface electrode from the surface of rectangular substrate It is in L-shaped to be formed as section to an end face, and the second surface electrode that wire cutting is envisioned along segmentation will not be in rectangle base Another end face of plate is overflowed, therefore forms end electrode in an end face of rectangular substrate in process afterwards, so as to It is able to ensure that the reliability of the connection of first surface electrode and end electrode is good, and can pacifies by the SMD components of completion Prevent that short circuit occurs with second surface electrode when being attached in circuit substrate.
As for reaching above-mentioned second purpose another method, the spy of the manufacture method of patch resistor of the invention Sign is, comprising:Prepare on surface and back side Liang Ge faces alternately formed with the surface segmentation groove extended parallel to and the back side The process of the large-size substrate of slot segmentation;First overlapping with the surface segmentation groove is formed on the surface of the large-size substrate Surface electrode and projected with the back side slot segmentation obtained imaginary line overlap second surface electrode process;It is developed across The process of resistive element between the first surface electrode and the second surface electrode;In the back side quilt of the large-size substrate The process that the region that the back side slot segmentation clips forms backplate;By the way that the large-size substrate is divided along the surface Groove is cut to be split so as to obtain via the back side slot segmentation to connect the work of double rectangular substrates of 2 rectangular segments Sequence;The end face for turning on the first surface electrode and the backplate is formed in two end faces of double rectangular substrates The process of electrode;And double rectangular substrates are split to obtain rectangular substrate along the back side slot segmentation Process.
It is pre-formed as described above on the surface of large-size substrate and back side Liang Ge faces with alternate position relationship flat The surface segmentation groove and back side slot segmentation extended capablely, on the surface of the large-size substrate along the direction orthogonal with each slot segmentation Alternately form the first surface electrode overlapping with surface segmentation groove and the imaginary line overlap for projecting to obtain with back side slot segmentation After second surface electrode, large-size substrate is split along surface segmentation groove so as to obtain double rectangular substrates, then due to The end of first surface electrode is overflowed on two divisional planes of the surface segmentation groove along double rectangular substrates, if therefore at it End electrode is formed on two divisional planes of double rectangular substrates in process afterwards, then can ensure that first surface electrode and end face The reliability of the connection of electrode is good.Then, double rectangular substrates are divided into two to obtain rectangle along back side slot segmentation Substrate, then second surface electrode will not overflow on the divisional plane along the back side slot segmentation of rectangular substrate, therefore will be complete Into SMD components be installed in circuit substrate when, can prevent and second surface electrode occur short circuit.
Invention effect
In accordance with the invention it is possible to the manufacture method of a kind of patch resistor and this patch resistor is provided, paster electricity Resistance device can ensure that as the first surface electrode of welding electrode and the connectivity of end electrode, by the SMD components of completion Being installed to can prevent that short circuit occurs with the second surface electrode as wire bonding electrode when in circuit substrate.
Brief description of the drawings
Fig. 1 is the top view of the patch resistor involved by the 1st embodiment of the present invention.
Fig. 2 be along Fig. 1 in II-II lines direction sectional view.
Fig. 3 is the explanation figure for representing the state by the patch resistor in circuit substrate.
Fig. 4 (a)~(d) is the explanation figure for the manufacturing process for representing the patch resistor.
Fig. 5 (a)~(d) is the explanation figure for the manufacturing process for representing the patch resistor.
Fig. 6 (a)~(d) is the explanation figure for the manufacturing process for representing the patch resistor.
Fig. 7 (a)~(d) is the explanation figure for the manufacturing process for representing the patch resistor.
Fig. 8 is the sectional view of the patch resistor involved by the 2nd embodiment of the present invention.
Fig. 9 (a)~(d) is the explanation figure for the manufacturing process for representing the patch resistor.
Figure 10 (a)~(d) is the explanation figure for the manufacturing process for representing the patch resistor.
Figure 11 (a)~(c) is the explanation figure for the manufacturing process for representing the patch resistor.
Figure 12 (a)~(c) is the explanation figure for the manufacturing process for representing the patch resistor.
Figure 13 (a)~(b) is the explanation figure for the manufacturing process for representing the patch resistor.
Figure 14 (a)~(b) is the explanation figure for the manufacturing process for representing the patch resistor.
Embodiment
It is described with reference to the accompanying drawings for the embodiment of invention, as depicted in figs. 1 and 2, the 1st embodiment of the invention Patch resistor 1 include:The insulated substrate 2 of rectangular shape, separate on the surface of insulated substrate 2 predetermined distance formation the One surface electrode 3 and second surface electrode 4, be formed as the resistance that bridges above-mentioned first surface electrode 3 and second surface electrode 4 Body 5, the diaphragm 6 for covering resistive element 5, formed in the backplate 7 at the back side of insulated substrate 2, to the table of backplate 7 and first End electrode 8 that face electrode 3 is turned on, covering first surface electrode 3, backplate 7, the exposed portion of end electrode 8 Second outer electrode 10 of the exposed portion of the first outer electrode 9 and covering second surface electrode 4.
Insulated substrate 2 be by the aluminum oxide substrate that is formed of ceramics, the insulated substrate 2 be by large-size substrate described later along Split to obtain in the first slot segmentation (and segmentation anticipation line) of clathrate extension and the second slot segmentation in length and breadth multiple Insulated substrate.
First surface electrode 3 and second surface electrode 4 are by the way that Ag-Pd thickeners to be screen printed onto to the surface of insulated substrate 2 Go up and be dried, burn till to obtain, relative to first surface electrode 3, second surface electrode 4 forms very big.Herein, It is in L-shaped that one surface electrode 3 is formed as section from the surface of insulated substrate 2 to the end face in diagram left side, at the end of insulated substrate 2 The chamfered section 2a for the taper that face top enters formed with the end for first surface electrode 3.On the other hand, second surface electrode 4 It will not be overflowed in the end face on the right side of the diagram of insulated substrate 2, the second surface electrode 4 is linear on the surface of insulated substrate 2 (overlook I fonts) formed and extend to corner.
Resistive element 5 is that the resistor pastes such as ruthenium-oxide are screen printed onto on the surface of insulated substrate 2 and is dried, burns till Come what is obtained.The both ends of the long side direction of the resistive element 5 are overlapping with first surface electrode 3 and second surface electrode 4, although saving Sketch map shows, but formed with the trim slots for adjusting resistance value on resistive element 5.
Diaphragm 6 is formed by 2 Rotating fields of priming coat and external coating, wherein priming coat be by glass paste silk-screen printing simultaneously It is dried, burns till to obtain, external coating is by the silk-screen printing of epoxylite thickener and is heating and curing to obtain.
Backplate 7 be on the back side of insulated substrate 2 by the silk-screen printing of Ag-Pd thickeners and be dried, burn till come Arrive, the backplate 7 is formed at the long side direction both ends at the back side of insulated substrate 2.
End electrode 8 is Ni-Cr etc. to be sputtered on an end face of insulated substrate 2 to obtain, end face electricity Turned on the end face that pole 8 is formed on the left of the diagram of insulated substrate 2 and by first surface electrode 3 and backplate 7.
First outer electrode 9 and the second outer electrode 10 are formed by 2 Rotating fields of barrier layer and external connection layer, wherein hindering Parietal layer is by electroplating the Ni coating formed, and external connection layer is by electroplating the Au coating formed.
As shown in figure 3, by installing what is formed as described above in circuit substrate 20 and with welding and wire bonding Patch resistor 1.That is, wiring pattern 21 is set with wiring pattern (not shown) away from the state of in circuit substrate 20 Put, on the wiring pattern 21 that patch resistor 1 is mounted therein in the state of, covering first surface electrode 3, backplate 7 And the first outer electrode 9 of end electrode 8 is fixed using solder 22, and cover the second of second surface electrode 4 Outer electrode 10 is connected to other wiring patterns via lead 23.The lead 23 is formed by gold, aluminium etc., passes through ultrasonic bonding point The second outer electrode 10 and wiring pattern are not fixed on.
Then, for the manufacture method of the patch resistor 1 formed as described above, reference picture 4 (a)~(d) to Fig. 7 (a)~(d) is illustrated.In addition, Fig. 4 (a)~(d) is the top view for showing large-size substrate, Fig. 5 (a)~(d) is to show figure 4 (a)~(d) sectional view along X1-X1 lines, Fig. 6 (a)~(d) are the top views for showing rectangular substrate and paster monomer, Fig. 7 (a)~(d) is the sectional view along X2-X2 lines for showing Fig. 6 (a)~(d).
First, as shown in Fig. 4 (a) and Fig. 5 (a), the large-size substrate 11 for obtaining multiple insulated substrates 2 is prepared. The first slot segmentation 12 and the second slot segmentation 13 that section is in the shape of the letter V are set to clathrate on the surface of the large-size substrate 11, and And setting envisions line M as the segmentation of imaginary line on the position that the first slot segmentation of adjacent pair 12 is divided into two, and utilizes The grid one by one for the oblong-shaped that paired the first slot segmentation 12 and segmentation envisions line M and the second slot segmentation 13 to divide into For a paster forming region.In addition, multiple paster forming regions are representatively illustrated in Fig. 4, but in practice for phase Carried out in the lump when in the large-size substrate 11 of multiple paster forming regions, each operation described below.
That is, in the surface of large-size substrate 11 and back side silk-screen printing Ag-Pd thickeners and it is dried, burns till, so as to such as Shown in Fig. 4 (b) and Fig. 5 (b), the is alternately formed in direction of the surface of large-size substrate 11 along crosscutting first slot segmentation 12 One surface electrode 3 and second surface electrode 4, and in direction of the back side of large-size substrate 11 along crosscutting first slot segmentation 12 Form the backplate 7 (electrode forming process) of banding extension.
Herein, first surface electrode 3 is formed as overlapping with the first slot segmentation 12, therefore first surface electrode 3 flows into In one slot segmentation 12.Second surface electrode 4 is formed on large-size substrate 11 with uniform thickness, and segmentation anticipation line M is overlapping, The size of second surface electrode 4 is formed as 2 times of about first surface electrode 3.That is, if observe in Fig. 4 (b) and clip segmentation in advance Think line M continuous 2 paster forming regions in the lateral direction, then the central portion in the region forms the second larger table of area Face electrode 4, the less first surface electrode 3 of area is formed in the left and right sides for clipping the second surface electrode 4.
Then, after the resistive element thickeners such as the surface screen-printed ruthenium-oxide of large-size substrate 11, it is dried, burnt Into being connected to the more of paired first surface electrode 3 and second surface electrode 4 so as to as shown in Fig. 4 (c) and Fig. 5 (c), be formed Individual resistive element 5 (resistive element formation process).
Then, by the surface screen-printed glass paste in large-size substrate 11, and it is dried, burns till, so that After forming the priming coat of covering resistive element 5, trim slots (omitting diagram) are formed on the priming coat to adjust resistance value.Then, The screen print epoxy resinoid thickener in a manner of covering priming coat and it is heating and curing, so as to such as Fig. 4 (d) and Fig. 5 (d) shown in, the diaphragm 6 (diaphragm formation process) formed by 2 Rotating fields of priming coat and external coating is formed.
Process so far is handling together for large-size substrate 11, then by right along the first slot segmentation 12 Large-size substrate 11 is split and (cut open), and large-size substrate 11 is carried out using doctor blade along segmentation anticipation line M Cut-out, so as to which as shown in Fig. 6 (a) and Fig. 7 (a), multiple rectangular substrate 11A (1 segmentation work is obtained from large-size substrate 11 Sequence).
Along the first slot segmentation 12 first surface electrode 3 is divided into two using this 1 time segmentation, first surface electrode 3 from It is in L-shaped that rectangular substrate 11A surface is formed as section to an end face.On the other hand, by entering along segmentation anticipation line M Row cutting is so as to which second surface electrode 4 be divided into two, therefore second surface electrode 4 will not be from the another of rectangular substrate 11A Overflow individual end face.In addition, the chamfered section 2a of the insulated substrate 2 shown in Fig. 2 is the first slot segmentation that this 1 time segmentation is blocked to obtain 12 inclined plane.
Then, by sputtering Ni-Cr etc. on a rectangular substrate 11A divisional plane, so as to such as Fig. 6 (b) and Fig. 7 (b) shown in, end electrode 8 (end electrode formation process) is formed on a rectangular substrate 11A end face.Utilize the end face Electrode 8, corresponding first surface electrode 3 and backplate 7 on rectangular substrate 11A surface and back side Liang Ge faces turn on, First surface electrode 3 is in L-shaped in the Formation cross-section from rectangular substrate 11A surface to end face, thus ensuring that end face is electric The reliability that pole 8 is connected with first surface electrode 3 is good.
Then, by being split (2 segmentations) to rectangular substrate 11A along the second slot segmentation 13, so as to such as Fig. 6 (c) and shown in Fig. 7 (c), obtained from rectangular substrate 11A multiple (2 times with the paster monomer 11B of 1 equal size of patch resistor Segmentation process).
Then, by implementing the plating such as Ni to the paster monomer 11B of singualtion, so as to form covering first surface respectively The exposed division of the prime coat and covering second surface electrode 4 of electrode 3 and the exposed portion of backplate 7 and end electrode 8 After the prime coat divided, implement the plating such as Au, Sn, Cu to cover these priming coats to form external connection layer, so as to such as Fig. 6 (d) With the first outer electrode 9 and the second outer electrode for Fig. 7 (d) Suo Shi, forming 2 Rotating fields formed by coating and external connection layer 10, complete the patch resistor 1 shown in Fig. 1.
As described above, in the patch resistor 1 of the 1st embodiment, as welding electrode first surface electrode 3 from It is in L-shaped that the surface of insulated substrate 2 is formed as section to end face, and the second surface electrode 4 as wire bonding electrode is exhausted It will not be overflowed on the end face of edge substrate 2, the second surface electrode 4 is formed as linear and extended on the surface of insulated substrate 2 To corner, thus ensuring that the connectivity of first surface electrode 3 and end electrode 8, is installed to by the SMD components of completion Can prevent that short circuit occurs with second surface electrode 4 when in circuit substrate.
In the manufacture method of the patch resistor 1 of the 1st embodiment, formed and separated on the surface of large-size substrate 11 Multiple first slot segmentations 12 that predetermined distance extends parallel to, and in the position that the first adjacent slot segmentation 12 is divided into two On preset as imaginary line segmentation envision line M, on the surface of the large-size substrate 11 along with the first slot segmentation 12 Orthogonal direction alternately forms the first surface electrode 3 overlapping with the first slot segmentation 12 and overlapping with segmentation anticipation line M the After two surface electrodes 4, large-size substrate 11 is split along the first slot segmentation 12 and obtained along segmentation anticipation line M cuttings Rectangular substrate 11A, therefore the table along the first surface electrode 3 that the segmentation of the first slot segmentation 12 obtains from rectangular substrate 11A It is in L-shaped that face is formed as section to an end face, and cut obtained second surface electrode 4 along segmentation anticipation line M will not be Overflow rectangular substrate 11A another end face.Thus, pass through an end in process afterwards in rectangular substrate 11A Face forms end electrode 8, so as to make the reliability that first surface electrode 3 is connected with end electrode 8 good, and will be complete Into SMD components be installed in circuit substrate when can prevent that short circuit occurs with second surface electrode 4, can be formed for carry out The larger second surface electrode 4 of the favourable area such as the situation of engagement.
Fig. 8 be represent the present invention the 2nd embodiment involved by patch resistor 30 sectional view, with Fig. 1,2 pairs The part answered marks identical label.
The difference of patch resistor 30 and the patch resistor 1 of the 1st embodiment shown in Fig. 8 is:From insulation Chamfered section 2b of the end face formed with taper on the right side of the back side of substrate 2 to diagram, structure in addition are essentially identical.The chamfering Chamfered section 2as of the portion 2b with being formed from the surface of insulated substrate 2 to the end face in diagram left side shape is identical, the side of backplate 7 Edge is set in the position away from chamfered section 2b.
Then, for the 2nd embodiment patch resistor 30 manufacture method, reference picture 9 (a)~(d) to Figure 14 (a), (b) is illustrated.Fig. 9 (a)~(d) is the top view for showing large-size substrate, and Figure 10 (a)~(d) is to show Fig. 9 (a) ~(d) sectional view along X1-X1 lines, Figure 11 (a)~(c) are the vertical views for showing double rectangular substrates and rectangular substrate Figure, Figure 12 (a)~(c) is the sectional view along X2-X2 lines for showing Figure 11 (a)~(c), and Figure 13 (a), (b) are paster monomers Top view, Figure 14 (a), (b) be showing along Figure 13 (a), (b) X3-X3 lines sectional view.
First, as shown in Fig. 9 (a) and Figure 10 (a), the large-size substrate 40 for obtaining multiple insulated substrates 2 is prepared. The slot segmentation of first surface slot segmentation 41 and second that section is in the shape of the letter V is set to clathrate on the surface of the large-size substrate 40 42, set in the back side of large-size substrate 40 and position that adjacent pair first surface slot segmentation 41 is divided into two section into First back side slot segmentation 43 of V-shaped.That is, the large-size substrate 40 with large-size substrate 11 used in the 1st embodiment The difference of (reference picture 4) is:The large-size substrate 11 of 1st embodiment is by adjacent pair first surface slot segmentation 41 Setting segmentation anticipation line M on the position being divided into two, but envisioning line with segmentation in the large-size substrate 40 of the 2nd embodiment Rear side corresponding to M sets the first back side slot segmentation 43.
Moreover, in the surface of the large-size substrate 40 of said structure and back side silk-screen printing Ag-Pd thickeners and done It is dry, burn till, so as to as shown in Fig. 9 (b) and Figure 10 (b), on the surface of large-size substrate 40 along crosscutting first surface slot segmentation 41 direction alternately forms first surface electrode 3 and second surface electrode 4, and at the back side of large-size substrate 40 by The region that one back side slot segmentation 43 clips forms backplate 7 (electrode forming process).
Herein, first surface electrode 3 is formed as overlapping with first surface slot segmentation 41, therefore first surface electrode 3 flows into To first surface slot segmentation 41, but on the flat surface of large-size substrate 40 second surface electrode 4 with uniform thickness Formed.Backplate 7 is formed slightly away on the position of the first back side slot segmentation 43, in the flat back of the body of large-size substrate 40 Face forms backplate 7 with uniform thickness.
Then, after the resistive element thickeners such as the surface screen-printed ruthenium-oxide of large-size substrate 40, it is dried, burnt Into being connected to the more of paired first surface electrode 3 and second surface electrode 4 so as to as shown in Fig. 9 (c) and Figure 10 (c), be formed Individual resistive element 5 (resistive element formation process).
Then, by the surface screen-printed glass paste in large-size substrate 40, and it is dried, burns till, so that After forming the priming coat of covering resistive element 5, trim slots (omitting diagram) are formed on the priming coat to adjust resistance value.Then, The screen print epoxy resinoid thickener in a manner of covering priming coat and it is heating and curing, so as to such as Fig. 9 (d) and Figure 10 (d) shown in, the diaphragm 6 (diaphragm formation process) formed by 2 Rotating fields of priming coat and external coating is formed.
Process so far is handling together for large-size substrate 40, then by along first surface slot segmentation 41 pairs of large-size substrates 40 carry out 1 segmentation, so as to as shown in Figure 11 (a) and Figure 12 (a), be obtained from large-size substrate 40 multiple Double rectangular substrate 40A (1 segmentation process).Now, the first surface slot segmentation 41 only to passing through the extension of first surface electrode 3 1 segmentation is carried out, the first back side slot segmentation 43 positioned at the rear side of second surface electrode 4 is split without 1 time, therefore double long Square substrate 40A is in the state that 2 rectangular segments are connected by not being divided the second surface electrode 4 to retain.And And first surface electrode 3 is divided into two along first surface slot segmentation 41 using this 1 time segmentation, therefore first surface electrode 3 It is in L-shaped to be formed as section from double rectangular substrate 40A surface to end face.
Then, by sputtering Ni-Cr etc. on double rectangular substrate 40A relative two divisional plane, so as to such as Figure 11 (b) and shown in Figure 12 (b), end electrode 8 is formed on the end face of double rectangular substrate 40A left and right two, utilizes above-mentioned end face Electrode 8 turns on the corresponding first surface electrode 3 and backplate 7 in double rectangular substrate 40A surface and back side Liang Ge faces (end electrode formation process).Now, first surface electrode 3 is formed as section from double rectangular substrate 40A surface to end face In L-shaped, thus ensuring that the reliability that end electrode 8 is connected with first surface electrode 3 is good.In addition, at above-mentioned end In the electrode forming process of face, end face electricity is formed using sputtering for multiple double rectangular substrate 40A overlapping in the vertical direction Pole 8, now maintains the symmetry of left and right in double rectangular substrate 40A, therefore can be arranged in each double rectangular substrate 40A Horizontal attitude can form end electrode 8 in the lump on double rectangular substrate 40A divisional plane without tilting using sputtering.
Then, by splitting along the first back side slot segmentation 43 to double rectangular substrate 40A, so as to such as Figure 11 (c) With Figure 12 (c) Suo Shi, two rectangular substrate 40B (2 segmentation process) are obtained from 1 double rectangular substrate 40A.Although pass through Second surface electrode 4 is divided into two by this 2 times segmentations, but second surface electrode 4 is formed in the flat of double rectangular substrate 40A On surface, therefore second surface electrode 4 will not overflow on rectangular substrate 40B divisional plane.That is, rectangular substrate 40B has There is the end electrode 8 formed on one face in end electrode formation process, but do not splitting in 2 segmentation process Form end electrode on the rectangular substrate 40B gone out another end face, so that it is guaranteed that the end face (divisional plane of 2 segmentations) with There is predetermined distance between second surface electrode 4.In addition, the chamfered section 2b of the insulated substrate 2 shown in Fig. 8 is to utilize this 2 times An inclined plane of the first obtained back side slot segmentation 43 is blocked in segmentation.
Then, by carrying out 3 segmentations to rectangular substrate 40B along the second slot segmentation 42, so as to such as Figure 13 (a) and figure Shown in 14 (a), the multiple and paster monomer 40C of 30 equal size of patch resistor (3 segmentations are obtained from rectangular substrate 40B Process).
Then, by implementing the plating such as Ni for the paster monomer 40C of singualtion, so as to form the first table of covering respectively Face electrode 3 and the prime coat of the exposed portion of backplate 7 and end electrode 8 and exposing for covering second surface electrode 4 After partial prime coat, implement the plating such as Au, Sn, Cu in a manner of covering above-mentioned prime coat to form external connection layer, so as to As shown in Figure 13 (b) and Figure 14 (b), the first outer electrode 9 and for 2 Rotating fields being made up of coating and external connection layer is formed Two outer electrodes 10 (outer electrode formation process), so as to complete the patch resistor 30 shown in Fig. 8.
As described above, in the manufacture method of the patch resistor 30 of the 2nd embodiment, in large-size substrate The He of first surface slot segmentation 41 extended parallel to is pre-formed with alternate position relationship on 40 surface and back side Liang Ge faces First back side slot segmentation 43, the first surface electricity overlapping with first surface slot segmentation 41 is formed on the surface of the large-size substrate 40 After the second surface electrode 4 of pole 3 and the imaginary line overlap obtained with the projection of the first back side slot segmentation 43, by large-size substrate 40 carry out 1 segmentation so as to obtain double rectangular substrate 40A along first surface slot segmentation 41, due in double rectangular substrates 40A along first surface slot segmentation 41 split two divisional planes on have first surface electrode 3 end overflow, if therefore End electrode 8 is formed in process afterwards on double rectangular substrate 40A two divisional planes, then can ensure that first surface electrode 3 reliabilities being connected with end electrode 8 are good.Then, double rectangular substrate 40A mono- are divided along the first back side slot segmentation 43 Rectangular substrate 40B is obtained for two, due on the rectangular substrate 40B divisional plane along the segmentation of first back side slot segmentation 43 There is no second surface electrode 4 to overflow, therefore when the SMD components of completion are installed in circuit substrate, can prevent and second Short circuit occurs for surface electrode 4.Thus, the reliability that first surface electrode 3 can be made to be connected with end electrode 8 is good, and Can prevent that short circuit occurs with second surface electrode 4 when the SMD components of completion are installed in circuit substrate, can be formed for The larger second surface electrode 4 of the favourable area such as situation about being engaged.
Label declaration
1st, 30 patch resistor
2 insulated substrates
2a, 2b chamfered section
3 first surface electrodes
4 second surface electrodes
5 resistive elements
6 diaphragms
7 backplates
8 end electrodes
9 first outer electrodes
10 second outer electrodes
11 large-size substrates
11A rectangular substrates
11B paster monomers
12 first slot segmentations
13 second slot segmentations
20 circuit substrates
21 wiring patterns
22 solders
23 leads
41 first surface slot segmentations
42 second slot segmentations
43 first back side slot segmentations
40 large-size substrates
The double rectangular substrates of 40A
40B rectangular substrates
40C paster monomers
M segmentation anticipation lines

Claims (3)

  1. A kind of 1. patch resistor, it is characterised in that including:
    The insulated substrate of rectangular shape,
    Separated on the surface of the insulated substrate predetermined distance formation first surface electrode and second surface electrode,
    Be formed as by the first surface electrode and the second surface electrode bridge joint resistive element,
    Cover the resistive element diaphragm,
    Formed the back side of the insulated substrate backplate and
    By the end electrode of the backplate and the first surface electrode conduction,
    The second surface electrode turns into wire bonding electrode,
    It is in L-shaped that the first surface electrode, which is formed as section from the surface of the insulated substrate to end face,
    Formed on the surface of the insulated substrate and extend to corner the second surface electrode linear.
  2. 2. a kind of manufacture method of patch resistor, it is characterised in that include:
    Prepare the process in large-size substrate of the surface formed with the multiple slot segmentations for separating predetermined distance and extending parallel to;
    The process that the first surface electrode overlapping with the slot segmentation is formed on the surface of the large-size substrate;
    Line overlap is envisioned in the segmentation for being formed and being set between slot segmentation described in adjacent pair on the surface of the large-size substrate Second surface electrode process;
    The process for the resistive element being developed across between the first surface electrode and the second surface electrode;
    In the process that the back side of the large-size substrate forms backplate;
    The large-size substrate is subjected to segmentation so as to the work that the first surface electrode is divided into two along the slot segmentation Sequence;
    The large-size substrate is envisioned into line along the segmentation to be cut off the second surface electrode with doctor blade The process being divided into two;And
    Formed first surface electricity on an end face of the rectangular substrate for being split to obtain along the slot segmentation The process of the end electrode of pole and backplate conducting.
  3. 3. a kind of manufacture method of patch resistor, it is characterised in that include:
    Prepare on surface and back side Liang Ge faces alternately formed with the big of the surface segmentation groove and back side slot segmentation extended in parallel The process of size substrate;
    Formed on the surface of the large-size substrate first surface electrode overlapping with the surface segmentation groove and with the back side The process that slot segmentation projects the second surface electrode of obtained imaginary line overlap;
    The process for the resistive element being developed across between the first surface electrode and the second surface electrode;
    In the process that the region clipped by the back side slot segmentation at the back side of the large-size substrate forms backplate;
    By the way that the large-size substrate is split along the surface segmentation groove so as to obtain 2 rectangular segments via institute The process for stating the connected double rectangular substrates of back side slot segmentation;
    The end for turning on the first surface electrode and the backplate is formed in two end faces of double rectangular substrates The process of face electrode;And
    Double rectangular substrates are split to obtain the process of rectangular substrate along the back side slot segmentation.
CN201710442192.5A 2016-06-14 2017-06-13 Patch resistor and its manufacturing method Expired - Fee Related CN107507684B (en)

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Cited By (2)

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Publication number Priority date Publication date Assignee Title
CN110867636A (en) * 2019-11-25 2020-03-06 苏州市新诚氏通讯电子股份有限公司 Aluminum nitride micro load sheet
CN114651314A (en) * 2019-11-12 2022-06-21 罗姆股份有限公司 Chip resistor

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Publication number Priority date Publication date Assignee Title
JPH09162002A (en) * 1995-12-07 1997-06-20 Koa Corp Chip-shaped electronic component and fabrication thereof
JP2001167914A (en) * 1999-12-08 2001-06-22 Rohm Co Ltd Dividing trench shape of insulating substrate
CN2569298Y (en) * 2002-09-11 2003-08-27 上海维安热电材料股份有限公司 High molecular thermosensitive resistor for surface adhesive mounting
CN1977347A (en) * 2004-03-31 2007-06-06 三菱麻铁里亚尔株式会社 Chip resistor
CN101189688A (en) * 2005-06-06 2008-05-28 兴亚株式会社 Chip resistor and its manufacturing method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09162002A (en) * 1995-12-07 1997-06-20 Koa Corp Chip-shaped electronic component and fabrication thereof
JP2001167914A (en) * 1999-12-08 2001-06-22 Rohm Co Ltd Dividing trench shape of insulating substrate
CN2569298Y (en) * 2002-09-11 2003-08-27 上海维安热电材料股份有限公司 High molecular thermosensitive resistor for surface adhesive mounting
CN1977347A (en) * 2004-03-31 2007-06-06 三菱麻铁里亚尔株式会社 Chip resistor
CN101189688A (en) * 2005-06-06 2008-05-28 兴亚株式会社 Chip resistor and its manufacturing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114651314A (en) * 2019-11-12 2022-06-21 罗姆股份有限公司 Chip resistor
CN110867636A (en) * 2019-11-25 2020-03-06 苏州市新诚氏通讯电子股份有限公司 Aluminum nitride micro load sheet

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CN107507684B (en) 2019-11-15
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