CN107491133B - A kind of bandgap voltage reference - Google Patents
A kind of bandgap voltage reference Download PDFInfo
- Publication number
- CN107491133B CN107491133B CN201710805315.7A CN201710805315A CN107491133B CN 107491133 B CN107491133 B CN 107491133B CN 201710805315 A CN201710805315 A CN 201710805315A CN 107491133 B CN107491133 B CN 107491133B
- Authority
- CN
- China
- Prior art keywords
- field
- effect tube
- triode
- voltage
- voltage reference
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
Abstract
The invention discloses a kind of bandgap voltage references, including：Level shifting circuit, the first field-effect tube, the second field-effect tube, third field-effect tube, the first triode, the second triode, third transistor, first resistor, second resistance and clamp circuit；The voltage that level shifting circuit is used to be inputted according to input terminal generates the voltage of identical single order positive temperature coefficient in first end and second end.The bandgap voltage reference introduces identical positive temperature coefficient voltage, and the channel-length modulation having using MP1 and MP2 itself by the drain electrode to MP1 and MP2, to eliminate or reduce second-order temperature coefficient, to realize second-order temperature compensating coefficient.
Description
Technical field
The present invention relates to IC design technical field, in particular to a kind of bandgap voltage reference.
Background technique
Currently, design of integrated circuit be unable to do without Analog Circuit Design and Design of Digital Circuit two parts.With technique
The reduction of size and the raising of chip integration, the design difficulty of analog circuit are also higher and higher.The non-ideal effects of device, function
Consumption, area, voltage range and precision etc. are all likely to become the bottleneck for restricting analog circuit performance or even entire chip performance.
Nucleus module of the on piece band gap reference as analog circuit provides reference voltage (or base for all analog modules
Quasi- electric current).Its principle be by the voltage of the voltage of positive temperature coefficient and negative temperature coefficient with certain coefficient it is superimposed come
To the band gap voltage of approximate single order zero-temperature coefficient.The reference voltage temperature coefficient can satisfy wanting for most analog circuits
It asks.But the raising that system index is required with people with advances in technology, the index of on piece band gap voltage reference source also by
It is continuously improved.For example, in high-precision circuit system (e.g., temperature sensors of high precision, high-precision adc ADC etc.),
The band gap voltage of single order zero-temperature coefficient is no longer satisfied requirement of the system to voltage temperature coefficient.Therefore it has to take into account that more
The methods of the tc compensation of high-order or temperature correction improve the temperature coefficient of reference voltage.
The structure of Bandgap Reference Voltage Generation Circuit is commonly used shown in Fig. 1.This structural core circuit by current mirror MP1,
MP2, MP3, resistance R1, R2, triode Q1, Q2, Q3 and clamp circuit (e.g., amplifier OPA, current mirror etc.) composition.Its is main
Working principle is as follows：Clamp circuit makes A, B two o'clock voltage keep equal, and the electric current IP1 then flowed through on resistance R1 is：
Wherein, VBE2For the base emitter voltage (voltage i.e. between Q2 emitter and Q2 base stage) of Q2, VBE1For Q1's
Base emitter voltage, R1For the resistance value of resistance R1, VTFor thermal voltage；ΔVBE=VBE2-VBE1With single order positive temperature coefficient,
In the case where not considering R1 temperature coefficient, IP1 also has single order positive temperature coefficient.Electric current passes through current mirror MP1, MP2 and MP3
Mirror image generates single order positive temperature coefficient voltage on resistance R2.Due to VBEWith single order negative temperature coefficient, pass through selection appropriate
The resistance value of R1 and R2, the proportionality coefficient M of Q1 and Q2, current mirror ratio N, single order zero-temperature coefficient can be obtained at the end VBG
Voltage output.The ideal voltage output of VBG is in Fig. 1 circuit diagram：
In fact, VBENot only there is single order negative temperature coefficient, it also has high-order (>=2) temperature coefficient.High-order temperature
The presence of coefficient makes the output of VBG as shown in S1, S2 or S3 of Fig. 2.Within the scope of total temperature, high-order temperature coefficient can draw
The voltage change Δ V risen is different with the difference of technique.It is even more big to have a 5mV by Δ V under normal circumstances, and second-order temperature system
Several positive and negative opening directions (upwardly or downwardly) for determining curve of output.
In order to reduce influence of the high-order temperature coefficient to output voltage, the prior art proposes compensation output voltage high-order temperature
The method of coefficient is spent, cardinal principle refers to Fig. 3.Its cardinal principle is by B point or the injection of D point or extraction second order electric current
To improve the second-order temperature coefficient of output voltage.The size and Orientation for extracting electric current directly affects the compensation effect of output voltage.
Existing skill is very easy to find by the considerations of research and actual circuit system application environment to the above prior art
Art has the following disadvantages：
(1) under normal circumstances, the second-order temperature coefficient very little of output voltage.The prior art passes through in B point or the injection of D point
Or it extracts the method for electric current and has to the size for accurately controlling electric current come the method for compensating second-order temperature coefficient.Due to ib or
Id itself electric current very little, generally 10-9A magnitude, it is difficult to ensure that the consistency of the electric current under different process corners.Export second order
Temperature coefficient can increase with the deviation of the compensation electric current, it is possible to output temperature coefficient can be made sharply to deteriorate.
(2) A, B two o'clock voltage decline as the temperature rises, and the voltage for exporting C point is held essentially constant.Transistor
The channel length effect of MP1, MP2 and MP3 can be such that the current mirror precision between them changes with the variation of temperature.Fig. 3
Second-order temperature compensating coefficient method there is no consider current mirror channel-length modulation influence.
The information disclosed in the background technology section is intended only to increase the understanding to general background of the invention, without answering
When being considered as recognizing or imply that the information constitutes the prior art already known to those of ordinary skill in the art in any form.
Summary of the invention
The purpose of the present invention is to provide a kind of bandgap voltage references, to overcome existing bandgap voltage reference that cannot have
The defect of effect compensation high-order temperature coefficient.
A kind of bandgap voltage reference provided in an embodiment of the present invention, including：Level shifting circuit, the first field-effect tube,
Second field-effect tube, third field-effect tube, the first triode, the second triode, third transistor, first resistor, second resistance
And clamp circuit；The source electrode of first field-effect tube, the source electrode of the second field-effect tube, third field-effect tube source electrode with electricity
Source is connected；The grid of first field-effect tube, the grid of the second field-effect tube, the grid of third field-effect tube are connected, and institute
The output end for stating clamp circuit is connected with the grid of first field-effect tube；The first end of the level shifting circuit with it is described
The drain electrode of first field-effect tube is connected, and the second end of the level shifting circuit is connected with the drain electrode of second field-effect tube；
The third end of the level shifting circuit is connected by the first resistor with the emitter of first triode, the level
4th end of conversion circuit is connected with the emitter of second triode；And the third end of the level shifting circuit also with institute
The first input end for stating clamp circuit is connected, and the 4th end of the level shifting circuit is also inputted with the second of the clamp circuit
End is connected；The drain electrode of the third field-effect tube is connected by the second resistance with the emitter of the third transistor, and
Connecting node between the drain electrode of the third field-effect tube and the second resistance is the output of the bandgap voltage reference
End；The base stage of first triode is connected and is grounded with the base stage of second triode, the current collection of first triode
Pole is connected and is grounded with the collector of second triode；The base earth of the third transistor, and grounded collector；Institute
It states voltage of the level shifting circuit for inputting according to input terminal and generates identical single order in the first end and the second end
The voltage of positive temperature coefficient.
In one possible implementation, first field-effect tube, the second field-effect tube and third field-effect tube are equal
For p-type field-effect tube.
In one possible implementation, first triode, the second triode and third transistor are PNP tri-
Pole pipe.
In one possible implementation, the level shifting circuit includes two identical source followers.
In one possible implementation, the clamp circuit is operational amplifier.
In one possible implementation, the third transistor and second triode are the same triode.
In one possible implementation, the breadth length ratio of first field-effect tube, the breadth length ratio of the second field-effect tube,
Ratio between the breadth length ratio of third field-effect tube is 1:1:N.
In one possible implementation, the emitter area of first triode, the second triode emitter
Area, third transistor emitter area between ratio be M:1:1.
A kind of bandgap voltage reference provided in an embodiment of the present invention, the leakage of field-effect tube is made by voltage conversion circuit
Pole tension (voltage of D, E two o'clock) has single order positive temperature coefficient, and voltage increases, the bandgap voltage reference as temperature increases
Source introduces identical positive temperature coefficient voltage by the drain electrode (D, E point) to MP1 and MP2, and have using MP1 and MP2 itself
Channel-length modulation realizes second-order temperature compensating coefficient to eliminate or reduce second-order temperature coefficient.Due under normal circumstances
D, E two o'clock voltage change range is larger (several hundred mV), the shadow of the compensation effect of output by D, E two o'clock absolute value of voltage slight change
Very little is rung, so the compensation method has very strong robustness on circuit, does not need later period calibration.
Other features and advantages of the present invention will be illustrated in the following description, also, partly becomes from specification
It obtains it is clear that understand through the implementation of the invention.The objectives and other advantages of the invention can be by written explanation
Specifically noted structure is achieved and obtained in book, claims and attached drawing.
Detailed description of the invention
Attached drawing is used to provide further understanding of the present invention, and constitutes part of specification, with reality of the invention
It applies example to be used to explain the present invention together, not be construed as limiting the invention.In the accompanying drawings：
Fig. 1 is the structure chart of Bandgap Reference Voltage Generation Circuit in the prior art；
Fig. 2 is variation schematic diagram of the VGB because of high-order temperature coefficient in the prior art；
Fig. 3 is the structure chart that can compensate the Bandgap Reference Voltage Generation Circuit of second-order temperature coefficient in the prior art；
Fig. 4 is the first structure figure of bandgap voltage reference in the embodiment of the present invention；
Fig. 5 is the schematic diagram that A, B, D and E point voltage vary with temperature in the embodiment of the present invention；
Fig. 6 is the second structure chart of bandgap voltage reference in the embodiment of the present invention.
Specific embodiment
With reference to the accompanying drawing, specific embodiments of the present invention will be described in detail, it is to be understood that guarantor of the invention
Shield range is not limited by the specific implementation.
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art
Every other embodiment obtained without creative efforts, shall fall within the protection scope of the present invention.Unless
Separately have it is other explicitly indicate that, otherwise in entire disclosure and claims, term " includes " or its transformation such as "comprising" or
" including " etc. will be understood to comprise stated element or component, and not exclude other elements or other compositions
Part.
Dedicated word " exemplary " means " being used as example, embodiment or illustrative " herein.Here as " exemplary "
Illustrated any embodiment should not necessarily be construed as preferred or advantageous over other embodiments.
In addition, in order to better illustrate the present invention, numerous details is given in specific embodiment below.
It will be appreciated by those skilled in the art that without certain details, the present invention equally be can be implemented.In some instances, for
Method well known to those skilled in the art, means, element are not described in detail, in order to highlight purport of the invention.
According to embodiments of the present invention, a kind of bandgap voltage reference is provided, Fig. 4 is the circuit of the bandgap voltage reference
Structure chart, as shown, it is specifically included：Level shifting circuit (the Level Shifter in Fig. 4), the first field-effect tube
MP1, the second field-effect tube MP2, third field-effect tube MP3, the first triode Q1, the second triode Q2, third transistor Q3,
One resistance R1, second resistance R2 and clamp circuit；Clamp circuit is indicated with operational amplifier OPA in Fig. 4.
Specifically, the source electrode of the first field-effect tube MP1, the source electrode of the second field-effect tube MP2, third field-effect tube MP3
Source electrode is connected with power vd D；The grid of first field-effect tube MP1, the grid of the second field-effect tube MP2, third field-effect tube
The grid of MP3 is connected, and the output end of clamp circuit is connected with the grid of the first field-effect tube MP1.Wherein, the first field-effect tube
MP1, the second field-effect tube MP2, third field-effect tube MP3 form current mirror, and the breadth length ratio of the first field-effect tube MP1, second
Ratio between the breadth length ratio of field-effect tube MP2, the breadth length ratio of third field-effect tube MP3 is 1:1:N.
The first end (i.e. D in Fig. 4) of level shifting circuit is connected with the drain electrode of the first field-effect tube MP1, level conversion
The second end (i.e. E in Fig. 4) of circuit is connected with the drain electrode of the second field-effect tube MP2；(scheme at the third end of level shifting circuit
A in 4) it is connected by first resistor R1 with the emitter of the first triode Q1, the 4th end of level shifting circuit is (i.e. in Fig. 4
B) be connected with the emitter of the second triode Q2；And the third end A of level shifting circuit is also inputted with the first of clamp circuit
End is connected, and the 4th end B of level shifting circuit is also connected with the second input terminal of clamp circuit；Clamp circuit is for guaranteeing A, B
The voltage of two o'clock is identical.
The drain electrode of third field-effect tube MP3 is connected by second resistance R2 with the emitter of third transistor Q3, and third
Connecting node between the drain electrode and second resistance R2 of field-effect tube MP3 is the output end VBG of bandgap voltage reference.One or three
The base stage of pole pipe Q1 is connected and is grounded with the base stage of the second triode Q2, the collector of the first triode Q1 and the second triode Q2
Collector be connected and be grounded；The base earth of third transistor Q3, and the grounded collector of Q3.Wherein, the first triode Q1
Emitter area, the emitter area of the second triode Q2, the ratio between the emitter area of third transistor Q3 be M:
1:1。
The voltage that level shifting circuit is used to be inputted according to input terminal F generates identical single order in first end D and second end E
The voltage of positive temperature coefficient.A, B, D and E point voltage vary with temperature as shown in figure 5, OPA can guarantee A, B two o'clock voltage value
It is equal, simultaneously because the emitter and base characteristic of Q2 make A, B two o'clock itself have single order negative temperature coefficient, and A, B two o'clock
Temperature characterisitic do not influenced by level shifting circuit, D, E two o'clock have single order positive temperature coefficient.
The working principle of bandgap voltage reference provided in an embodiment of the present invention is analyzed in detail below：
With the reduction of process, the channel-length modulation of metal-oxide-semiconductor is further obvious.In Fig. 4 circuit, D, E two
The voltage of point rises as the temperature rises, and C point voltage is held essentially constant.Do not considering that channel-length modulation draws
Under conditions of entering mirroring error, ideal output voltage VBGideaAs shown in formula (2).In fact, due to metal-oxide-semiconductor MP1, MP2
Current mirror error delta IP can be introduced with the channel-length modulation of MP3, this season：
IP3=N (IP+ Δ IP) (3)
In formula (3), IP3 is the drain current of MP3, and IP is the drain current of MP1 or MP2, and IP1=IP2；N is MP3's
The ratio of breadth length ratio and the breadth length ratio of MP1.So output voltage is at this time：
In formula (4), R1And R2The resistance value of respectively R1 and R2, M be Q1 emitter area and Q2 emitter area it
Than VTIndicate thermal voltage.
Herein, it enablesThen formula (4) can be with abbreviation：
VBG=VBGidea+A·Kerror·VT (5)
VBG is enabled againerror=AKerror·VT, then formula (5) can simplify for：
VBG=VBGidea+VBGerror (6)
Because current mirror MP1, MP2 and MP3 are in saturation region, and the current formula of known saturation region is：
In formula (7), VGSIndicate the gate source voltage of MP1 or MP2, VDSIndicate drain-source voltage, VTHIndicate threshold voltage；L is indicated
Channel length, λ are channel length modulation coefficient, μ0Refer to the mobility of carrier, CoxFor the capacitance density of gate oxide, W
Indicate the channel width of transistor.VEIndicate E point voltage.
The error current Δ IP as caused by channel-length modulation is：
△ in formula (8) | VDS| refer to the V of MP3DSWith the V of MP1 (or MP2)DSDifference.Combinatorial formula (7), formula (8) can
To obtain：
Formula (9) are arranged and are obtained：
If enabling VBE2≤VE≤VBGidea, then Kerror< 0.
Formula (10) is sought into first-order partial derivative to temperature, is obtained：
Due to(VEIt is generally device channel length in 4V/um or so, L for technological parameter),(k is Boltzmann constant, and T is absolute temperature, and q is electron charge), again
Because E point voltage has single order positive temperature coefficient, i.e.,If selection appropriateValue is (e.g.,), then
Formula (10) is sought into second-order partial differential coefficient to temperature：
If enablingWhenWhen,
Influence of the channel-length modulation of device to output temperature coefficient is made a concrete analysis of below.By formula (6)
In output error single order and second-order partial differential coefficient are asked respectively to temperature, obtain：
If enablingThe K known to formula (14)2With second order positive temperature characterisitic.Ignore
Higher order (>2) formula (6) can be expressed as in the case where rank temperature coefficient：
VBG=VBGidea+K1·T+K2·T2 (15)
From formula (15) as can be seen that output caused by the channel-length modulation of current source MP1, MP2 and MP3 misses
Difference has single order negative temperature coefficient and second order negative temperature coefficient.In circuit design process, K1It can be supported by single order positive temperature coefficient
Disappear, but K2It can be superimposed with the second order negative temperature coefficient of ideal output, then：
VBG=VBGidea,adj+K2·T2 (16)
It is obtained by analyzing above, the introduced channel-length modulation of Level Shifter circuit can generate output
Second order positive temperature coefficient.And under normal circumstancesSo VBGidea,adjWith second order negative temperature coefficient.Pass through formula
(16) as can be seen that K2T2Second order positive temperature characterisitic can compensate VBGidea,adjSecond order negative temperature characteristic, selection appropriate
COEFFICIENT K2T2It can achieve reduction or eliminate the purpose of bandgap voltage reference second-order temperature coefficient.Specifically, by adjusting D or E
Single order positive temperature coefficient (i.e. the voltage of D or E varies with temperature slope in Fig. 5) adjustable COEFFICIENT K of point voltage2T2, to disappear
Except the second-order temperature coefficient of bandgap voltage reference.
A kind of bandgap voltage reference provided in an embodiment of the present invention, the leakage of field-effect tube is made by voltage conversion circuit
Pole tension (voltage of D, E two o'clock) has single order positive temperature coefficient, and voltage is increased as temperature increases, by MP1 and MP2
Drain electrode introduce identical positive temperature coefficient voltage, and the channel-length modulation having using MP1 and MP2 itself, to eliminate
Or reduce second-order temperature coefficient, realize second-order temperature compensating coefficient.Since D, E two o'clock voltage change range are larger under normal circumstances
The compensation effect of (several hundred mV), output are influenced very little by D, E two o'clock absolute value of voltage slight change, so the compensation method exists
There is very strong robustness on circuit, do not need later period calibration.
On the basis of the above embodiments, the first field-effect tube MP1, the second field-effect tube MP2 and third field-effect tube MP3
It is p-type field-effect tube (P-channel field-effect transistor (PEFT) pipe).First triode Q1, the second triode Q2 and third transistor Q3 are PNP
Triode.
On the basis of the above embodiments, level shifting circuit includes two identical source followers, and two source electrodes
Follower is in parallel.At this point, the end F of level shifting circuit is the grid of source follower, D, E are respectively two source followers
Source electrode, A, B are respectively the drain electrode of two source followers.When F point voltage varies with temperature linearly increasing, D, E two o'clock voltage
It is also linearly increasing with temperature.Specifically, can use at this time, A, B two o'clock are natural to be increased and reduced voltage with temperature, is passed through
Voltage plus and minus calculation appropriate generates the F point voltage of inverse proportion.
It should be noted that source follower is a preferred embodiment in the embodiment of the present invention, other level
As long as conversion circuit can produce D, E point voltage of single order positive temperature coefficient, the application is not limited this.
On the basis of the above embodiments, shown in Figure 6, third transistor Q3 and the second triode are same three pole
Pipe.Remove triode Q3 on the basis of fig. 4, and an end of resistance R2 is connected to the emitter of triode Q2, to realize
The multiplexing of Q2, can save device resource.The second-order temperature compensating coefficient principle of Fig. 6 and the second order coefficient compensation principle of Fig. 4
It is identical, it is not repeated herein.
The apparatus embodiments described above are merely exemplary, wherein described, unit can as illustrated by the separation member
It is physically separated with being or may not be, component shown as a unit may or may not be physics list
Member, it can it is in one place, or may be distributed over multiple network units.It can be selected according to the actual needs
In some or all of the modules achieve the purpose of the solution of this embodiment.Those of ordinary skill in the art are not paying creativeness
Labour in the case where, it can understand and implement.
Through the above description of the embodiments, those skilled in the art can be understood that each embodiment can
It realizes by means of software and necessary general hardware platform, naturally it is also possible to pass through hardware.Based on this understanding, on
Stating technical solution, substantially the part that contributes to existing technology can be embodied in the form of software products in other words, should
Computer software product may be stored in a computer readable storage medium, such as ROM/RAM, magnetic disk, CD, including several fingers
It enables and using so that a computer equipment (can be personal computer, server or the network equipment etc.) executes each implementation
Method described in certain parts of example or embodiment.
The aforementioned description to specific exemplary embodiment of the invention is in order to illustrate and illustration purpose.These descriptions
It is not wishing to limit the invention to disclosed precise forms, and it will be apparent that according to the above instruction, can much be changed
And variation.The purpose of selecting and describing the exemplary embodiment is that explaining specific principle of the invention and its actually answering
With so that those skilled in the art can be realized and utilize a variety of different exemplary implementation schemes of the invention and
Various chooses and changes.The scope of the present invention is intended to be limited by claims and its equivalents.
Claims (8)
1. a kind of bandgap voltage reference, which is characterized in that including：Level shifting circuit, the first field-effect tube, the second field-effect
Pipe, third field-effect tube, the first triode, the second triode, third transistor, first resistor, second resistance and clamp circuit；
The source electrode of first field-effect tube, the source electrode of the second field-effect tube, third field-effect tube source electrode be connected with power supply；
The grid of first field-effect tube, the grid of the second field-effect tube, the grid of third field-effect tube are connected, and clamper electricity
The output end on road is connected with the grid of first field-effect tube；
The first end of the level shifting circuit is connected with the drain electrode of first field-effect tube, and the of the level shifting circuit
Two ends are connected with the drain electrode of second field-effect tube；The third end of the level shifting circuit passes through the first resistor and institute
The emitter for stating the first triode is connected, the 4th end of the level shifting circuit and the emitter phase of second triode
Even；And the third end of the level shifting circuit is also connected with the first input end of the clamp circuit, the level conversion electricity
4th end on road is also connected with the second input terminal of the clamp circuit；
The drain electrode of the third field-effect tube is connected by the second resistance with the emitter of the third transistor, and described
Connecting node between the drain electrode of third field-effect tube and the second resistance is the output end of the bandgap voltage reference；
The base stage of first triode is connected and is grounded with the base stage of second triode, the current collection of first triode
Pole is connected and is grounded with the collector of second triode；The base earth of the third transistor, and grounded collector；
The voltage that the level shifting circuit is used to be inputted according to input terminal generates identical in the first end and the second end
Single order positive temperature coefficient voltage.
2. bandgap voltage reference according to claim 1, which is characterized in that first field-effect tube, second effect
Should manage with third field-effect tube is p-type field-effect tube.
3. bandgap voltage reference according to claim 1, which is characterized in that first triode, the second triode
It is PNP triode with third transistor.
4. bandgap voltage reference according to claim 1, which is characterized in that the level shifting circuit includes two phases
Same source follower.
5. bandgap voltage reference according to claim 1, which is characterized in that the clamp circuit is operational amplifier.
6. bandgap voltage reference according to claim 1, which is characterized in that the third transistor and the described 2nd 3
Pole pipe is the same triode.
7. bandgap voltage reference according to claim 1, which is characterized in that the breadth length ratio of first field-effect tube,
Ratio between the breadth length ratio of second field-effect tube, the breadth length ratio of third field-effect tube is 1:1:N.
8. bandgap voltage reference according to claim 1, which is characterized in that the transmitting pole-face of first triode
Product, the ratio between the emitter area of the second triode, the emitter area of third transistor are M:1:1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710805315.7A CN107491133B (en) | 2017-09-08 | 2017-09-08 | A kind of bandgap voltage reference |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710805315.7A CN107491133B (en) | 2017-09-08 | 2017-09-08 | A kind of bandgap voltage reference |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107491133A CN107491133A (en) | 2017-12-19 |
| CN107491133B true CN107491133B (en) | 2018-11-16 |
Family
ID=60652280
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710805315.7A Active CN107491133B (en) | 2017-09-08 | 2017-09-08 | A kind of bandgap voltage reference |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107491133B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109491433B (en) * | 2018-11-19 | 2020-07-28 | 成都微光集电科技有限公司 | Reference voltage source circuit structure suitable for image sensor |
| CN111190455A (en) * | 2020-02-28 | 2020-05-22 | 上海矽睿科技有限公司 | Band gap reference circuit |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030117120A1 (en) * | 2001-12-21 | 2003-06-26 | Amazeen Bruce E. | CMOS bandgap refrence with built-in curvature correction |
| US9304528B2 (en) * | 2012-12-04 | 2016-04-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Reference voltage generator with op-amp buffer |
| CN203204485U (en) * | 2013-03-27 | 2013-09-18 | 比亚迪股份有限公司 | Band-gap reference circuit |
| CN105320205B (en) * | 2014-07-30 | 2017-03-08 | 国家电网公司 | A kind of band gap reference with the high PSRR of low maladjustment voltage |
| CN104793690A (en) * | 2015-04-27 | 2015-07-22 | 西安电子科技大学 | High-precision band-gap reference source |
-
2017
- 2017-09-08 CN CN201710805315.7A patent/CN107491133B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN107491133A (en) | 2017-12-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109725672A (en) | A kind of band-gap reference circuit and high-order temperature compensated method | |
| US8907650B2 (en) | Temperature adaptive bandgap reference circuit | |
| CN103713682B (en) | Low pressure difference linear voltage regulator | |
| KR102124241B1 (en) | Linear regulator | |
| CN104199509B (en) | A kind of temperature-compensation circuit for band gap reference | |
| CN110427067B (en) | Method for improving current sampling precision by using analog circuit | |
| CN209248374U (en) | The fixed delay circuit not influenced by temperature voltage | |
| CN104156025B (en) | A kind of high-order temperature compensated reference source | |
| WO2019104467A1 (en) | Voltage regulator and power supply | |
| CN105892548B (en) | Reference voltage generation circuit with temperature compensating function | |
| CN107491133B (en) | A kind of bandgap voltage reference | |
| CN103399606B (en) | Low-voltage bandgap-free reference voltage source | |
| CN104977963B (en) | A kind of band-gap reference circuit of the high PSRR of low-power consumption without amplifier | |
| JP2008058313A (en) | Method and apparatus for measuring leakage current | |
| CN104679092A (en) | Over-temperature delay protection circuit with wide power voltage range | |
| CN105867518A (en) | Current mirror for effectively inhibiting power source voltage influence | |
| CN104516385B (en) | Voltage regulator | |
| CN104035469A (en) | Band-gap reference circuit, integrated circuit and band-gap reference voltage generation method | |
| CN103246311B (en) | Non-resistor band-gap reference voltage source with high-order curvature compensation | |
| CN109491438A (en) | The fixed delay circuit and its control method not influenced by temperature voltage | |
| CN105739596B (en) | A kind of high-precision reference voltage source circuit for applying secondary positive temperature coefficient to compensate | |
| CN108664068A (en) | A kind of fractional expression band-gap reference circuit applied to low supply voltage | |
| CN108549455A (en) | A kind of reduction voltage circuit with wide input range | |
| CN208873065U (en) | A kind of band-gap reference circuit | |
| CN104216458A (en) | Temperature curvature complementary reference source |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 100192 Beijing, Haidian District West Road, No. 66, Zhongguancun Dongsheng science and Technology Park, building A, building No. 3 Co-patentee after: STATE GRID INFORMATION & TELECOMMUNICATION GROUP Co.,Ltd. Patentee after: BEIJING SMARTCHIP MICROELECTRONICS TECHNOLOGY Co.,Ltd. Co-patentee after: STATE GRID CORPORATION OF CHINA Address before: 100192 Beijing, Haidian District West Road, No. 66, Zhongguancun Dongsheng science and Technology Park, building A, building No. 3 Co-patentee before: STATE GRID INFORMATION & TELECOMMUNICATION GROUP Co.,Ltd. Patentee before: BEIJING SMARTCHIP MICROELECTRONICS TECHNOLOGY Co.,Ltd. Co-patentee before: State Grid Corporation of China |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191120 Address after: 102299 1st floor, building 12, courtyard 79, Shuangying West Road, science and Technology Park, Changping District, Beijing Co-patentee after: STATE GRID INFORMATION & TELECOMMUNICATION GROUP Co.,Ltd. Patentee after: Beijing Smart core semiconductor technology Co.,Ltd. Co-patentee after: STATE GRID CORPORATION OF CHINA Address before: 100192 Beijing, Haidian District West Road, No. 66, Zhongguancun Dongsheng science and Technology Park, building A, building No. 3 Co-patentee before: STATE GRID INFORMATION & TELECOMMUNICATION GROUP Co.,Ltd. Patentee before: BEIJING SMARTCHIP MICROELECTRONICS TECHNOLOGY Co.,Ltd. Co-patentee before: STATE GRID CORPORATION OF CHINA |