CN107478198A - A kind of high-precision MEMS angular transducers sensitive structure and processing method - Google Patents

A kind of high-precision MEMS angular transducers sensitive structure and processing method Download PDF

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Publication number
CN107478198A
CN107478198A CN201710633123.2A CN201710633123A CN107478198A CN 107478198 A CN107478198 A CN 107478198A CN 201710633123 A CN201710633123 A CN 201710633123A CN 107478198 A CN107478198 A CN 107478198A
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pole plate
silicon
film
sio
sensitive structure
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孙鹏
邱飞燕
范冬青
邢朝洋
徐杰
王超
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China Aerospace Times Electronics Corp
Beijing Aerospace Control Instrument Institute
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China Aerospace Times Electronics Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C9/00—Measuring inclination, e.g. by clinometers, by levels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C3/00—Assembling of devices or systems from individually processed components
    • B81C3/001—Bonding of two components
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C25/00—Manufacturing, calibrating, cleaning, or repairing instruments or devices referred to in the other groups of this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors

Abstract

A kind of high-precision MEMS angular transducers sensitive structure and processing method, the sensitive structure include upper glass pole plate, middle silicon pole plate, lower glass pole plate, and spun gold lead；Metal electrode region is deposited with upper glass pole plate and lower glass pole plate and medium diaphragm area forms the top crown and bottom crown of electric capacity；Middle silicon pole plate is formed the middle plate of electric capacity by two cantilever beams one square masses of connection；Upper glass pole plate, middle silicon pole plate, lower glass pole plate form " sandwich " formula sensitive structure using dual field electrostatic bonding mode, then draw capacitance signal with gold wire bonder pressure welding spun gold.The present invention uses symmetrical capacitance structure form, using wet method bulk-silicon processing method, larger mass can be obtained, angular resolution and measurement accuracy are improved, can be widely applied to the angle of bank measurement of the platforms such as unmanned plane, on-board equipment, satellite communication, engineering machinery, steel tower intellectual monitoring, solar-tracking system.

Description

A kind of high-precision MEMS angular transducers sensitive structure and processing method
Technical field
The present invention relates to a kind of MEMS angular transducers sensitive structure and processing method, belongs to micromechanics field and measurement is led Domain.
Background technology
Gradient sensor is mainly used in installing the measurement of carrier inclined angle, can be divided into solid pendulum by operation principle Three kinds of formula, gas pendulum-type and hydra-swing.Gu pendulum-type obliquity sensor sensitive materials are the quality of pendulum, due to clear and definite pendulum length And center of oscillation, the precision and anti-overload ability of its product are higher, but volume is big, therefore use is by a definite limitation.Gas pendulum-type inclination angle In sensor, gas is unique motion body in annular seal space, and its quality is small, in inertia caused by big impact and high overload It is small, so the ability with stronger anti-vibration or impact, but gas motion control is complex, and influence factor is relatively more, because This precision is not high.Hydra-swing obliquity sensor falls between and system is stable, the extensive use in High Definition Systems, domestic Outer product is mostly such.
With the development of microelectric technique, perfect and machining accuracy the raising of miromaching equipment, with monocrystalline The various miniature angular transducer products of silicon materials development are come out one after another, and it is compared with traditional mechanical angle sensor, tool Have a small volume, light weight, it is low in energy consumption the characteristics of.Using miromaching, it is easy to accomplish batch production, reduce cost.
MEMS obliquity sensors are used for measuring the change of pitch angle amount of relative level, and theoretical foundation is Newton's second law. At present for obliquity sensor product, maximum measurement swing range all within ± 90 °, can provide uniaxially or biaxially to Measurement of dip angle.
The content of the invention
The technology of the present invention solves problem：Overcome prior art insufficient, there is provided a kind of high-precision MEMS angular transducers Sensitive structure and processing method, the processing method based on KOH wet etchings obtains the silicon micro-sensitive structure of sandwich construction, based on double The method of electric field anode electrostatic bonding realizes the three-decker form of high degree of symmetry, obtains larger base electric capacity, improves angle The sensitivity of measurement and precision.
The technical solution adopted in the present invention is：A kind of high-precision MEMS angular transducers sensitive structure, including upper glass Pole plate, middle silicon pole plate, lower glass pole plate and spun gold lead, middle silicon pole plate is between upper glass pole plate, lower glass pole plate； Upper glass pole plate, middle silicon pole plate, the metal pad on lower glass pole plate draw spun gold lead respectively；Upper glass pole plate, centre Silicon pole plate, lower glass pole plate are connected by being formed between dual field electrostatic bonding method glass material and silicon materials SiO2Layer, and capacitance signal is drawn by spun gold lead.
The material of the upper glass pole plate or lower glass pole plate is Pai Ruikesi 7740, thickness 0.8mm, Pai Ruikesi 7740 material side surface deposition golden films, golden film surface deposition SiO2Deielectric-coating.
The material of the middle silicon pole plate is<100>The monocrystalline silicon of crystal orientation, thickness 0.38mm, the sensitivity of middle silicon pole plate Mass size is 4.8mm × 4.8mm × 0.368mm；The size of cantilever beam is 1.2mm × 1mm × 0.03mm, two cantilever beams Spacing be 1.5mm.
A kind of processing method of high-precision MEMS angular transducers sensitive structure, comprises the following steps：
Step 1: golden film is deposited on the side surface of glass material one；
Step 2: erode the gold beyond electrode zone by being lithographically formed electrode zone in golden film and chromium forms electricity Pole；
Step 3: deposit SiO on the electrode zone formed by chemical vapor deposition in step 22Film；
Step 4: in SiO2By being lithographically formed medium diaphragm area on film, the SiO2 shapes beyond medium diaphragm area are eroded Into deielectric-coating；
Step 5: the monolithic glass disk scribing formed in step 1~step 4 is formed into upper glass pole plate and lower glass Pole plate, and draw spun gold lead；
Step 6: middle silicon pole plate is formed using KOH wet etching methods processing silicon wafer；
Step 7: upper glass pole plate, middle silicon pole plate, lower glass pole plate are carried out pair using dual field electrostatic bonding method Standard, middle silicon pole plate are placed between glass pole plate, lower glass pole plate, are fixed on by heat-conducting block on bonding stove；Middle silicon Pole plate connects anode, and upper glass pole plate and lower glass pole plate connect negative electrode, applies DC voltage formation dual field and starts electrostatic bonding；Treat When electric current drops to the current threshold of setting, DC voltage is closed, cools the temperature to normal temperature.
The step 6 comprises the following steps that：
5.1st, on silicon wafer, SiO is generated by high-temperature oxydation2Film, SiO21.2 μm of the thickness of film；Temperature setting is 1000 ~1200 DEG C, first it is passed through dry oxygen 30 minutes, then is passed through wet oxygen 3~4 hours, then be passed through dry oxygen 30 minutes, reduces temperature to normal temperature；
5.2nd, SiN is generated by chemical vapor deposition on the silicon wafer after high-temperature oxydationXFilm, 2500 angstroms of thickness；
5.3rd, it is being deposited with SiNXOn the silicon wafer of film, mask corrosion area is formed by dual surface lithography, silicon wafer is put into SiO2/SiNXCorrode 3 minutes in corrosive liquid, remove the SiN outside mask corrosion areaXFilm layer；
5.4th, in mask corrosion area, Ti Gui pre-etching area is formed by dual surface lithography, silicon wafer is put into SiO2/SiNX SiO in corrosive liquid until Ti Gui pre-etching area2Film is corroded completely；Reuse in KOH wet etching Ti Gui pre-etching area Body silicon, 28 μm of depth；
5.5th, the region outside mask corrosion area carries out dual surface lithography, forms Ti Gui deep etch area, silicon chip is put into SiO2/SiNXCorrode corrosion up to the SiO in Ti Gui deep etch area2Film is corroded completely, reuses KOH wet etching body silicon, Until the body silicon in Ti Gui pre-etching area is corroded completely；
5.6th, the silicon wafer for generating step 5.5 is put into SiO2/SiNXCorrode in corrosive liquid, until in mask corrosion area SiO2Film is corroded completely；The whole silicon wafer of KOH wet etchings is reused, corrosion depth is 6 μm；
5.7th, by remaining SiO on silicon wafer2/SiNXFilm carries out scribing after all removing, in welding disking area evaporation golden film life Into pad, middle silicon pole plate is generated, and draw spun gold lead.
3000~4000 angstroms of the layer gold thickness of golden film in the step 1, layers of chrome thickness are about 500 angstroms.
SiO in the step 322000~3000 angstroms of the thickness of film.
The temperature setting of stove is bonded in the step 7 in the range of 250 DEG C~450 DEG C.
The scope of DC voltage is 600V~800V in the step 7.
Current threshold is 0.01mA in the step 7.
The present invention compared with prior art, has the advantages that：
(1) present invention is a kind of high-precision MEMS angular transducers sensitive structure, is had using three-decker form preferable Structural symmetry, differential capacitor can obtain larger capacitance change, and middle silicon pole plate sensitive-mass is larger to be provided Higher sensitivity and angular resolution；
(2) present invention uses the processing method based on KOH wet etchings, is combined by multiple photoetching with wet etching, Requirement (the key structure chi of claim 3 of multilayer steps physical dimension in the height direction in silicon plane is effectively ensured It is very little), two-sided while photoetching and wet etching can ensure the uniformity of middle silicon pole plate positive and negative size, and the thickness of cantilever beam The symmetry of degree and gap size；
(3) present invention uses the processing of upper glass pole plate, middle silicon pole plate, lower glass pole plate dual field anode electrostatic bonding Method, while dual field effect effectively reduce the influence that electrostatic force in bonding process puts structure to silicon, prevent adsorption phenomena Occur, the technique processing method after electrostatic bonding can obtain preferable surface quality, and less upper acoplanarity displacement is less Residual stress, higher bonding yield rate.
Brief description of the drawings
Fig. 1 is the MEMS angular transducer fundamental diagrams of the present invention；
Fig. 2 (a) is the MEMS angular transducer sensitive structure sectional views of the present invention；
Fig. 2 (b) is the MEMS angular transducer sensitive structure front views of the present invention；
Fig. 3 (a) is glass pole plate schematic diagram under MEMS angular transducer sensitive structures of the invention；
Fig. 3 (b) is glass pole plate schematic diagram on the MEMS angular transducer sensitive structures of the present invention；
Fig. 4 is silicon pole plate schematic diagram among the MEMS angular transducers sensitive structure of the present invention；
Fig. 5 is the flow process chart of the glass pole plate of the present invention；
Fig. 6 is middle flow process chart of the silicon pole plate based on KOH wet etchings of the present invention；
Fig. 7 is upper glass pole plate, middle silicon pole plate, lower glass pole plate dual field electrostatic bonding schematic diagram.
Embodiment
A kind of operation principle of high-precision MEMS angular transducers sensitive structure of the present invention is as shown in figure 1, work as MEMS angles When sensitive structure installs carrier run-off the straight, influenceed by acceleration of gravity, middle silicon structure pendulum will shift, and cause " sandwich " structure both sides electric capacity is asymmetric, and the difference of both sides electric capacity directly reflects the change at angle of inclination.
A kind of high-precision MEMS angular transducers sensitive structure of the present invention, as shown in Fig. 2 (a), Fig. 2 (b), including upper glass Glass pole plate 1, middle silicon pole plate 2, lower glass pole plate 3, and spun gold lead 4.Middle silicon pole plate 2 is located at upper glass pole plate 1, lower glass Between pole plate 3；Upper glass pole plate 1, middle silicon pole plate 2, the metal pad on lower glass pole plate 3 draw spun gold lead 4 respectively；On Glass pole plate 1, middle silicon pole plate 2, lower glass pole plate 3 by dual field electrostatic bonding method glass material and silicon materials it Between form the SiO2 layers being connected to each other, and capacitance signal is drawn by spun gold lead 4.Upper glass pole plate 1, middle silicon pole plate 2, under Glass pole plate 3 forms " sandwich " formula sensitive structure by electrostatic bonding mode, then draws capacitance signal, appearance and size by spun gold 7.6mm×8.8mm×1.98mm。
As shown in Fig. 3 (a), Fig. 3 (b), for the MEMS angular transducer sensitive structure glass pole plate schematic diagrames of invention.
The material selection Pai Ruikesi 7740 of upper glass pole plate 1, lower glass pole plate 3, thickness are 0.8 millimeter, surface deposition One layer of golden film and one layer of SiO2Dielectric layer, by changing SiO2The size of the thickness regulation base electric capacity of deielectric-coating.
Fig. 4 be the present invention MEMS angular transducers sensitive structure among silicon pole plate schematic diagram, the material of middle silicon pole plate 2 For<100>The monocrystalline silicon of crystal orientation, thickness 0.38mm, appearance and size 7.6mm × 8.8mm × 0.38mm, the chi of sensitive-mass block 21 Very little L × B × T=4.8mm × 4.8mm × 0.368mm, size l × b × t=1.2mm × 1mm × 0.03mm of cantilever beam, two The spacing of cantilever beam 22 is 1.5mm.(L represents the length of sensitive-mass block 21, and B represents the width of sensitive-mass block 21, and T represents quick Feel the thickness of mass 21；L represents the length of cantilever beam 22, and b represents the width of cantilever beam 22, and t represents the thickness of cantilever beam 22 Degree).
Upper glass pole plate 1, middle silicon pole plate 2, lower glass pole plate 3 are bonded together to form using dual field electrostatic bonding method " sandwich " formula sensitive structure, the gap between silicon and glass are 6 μm, error ± 0.5 μm, achievable angular surveying scope ± 90 ° of measurement.
A kind of high-precision MEMS angular transducers sensitive structure of the present invention, it is now 0 to be installed vertically on measurement carrier Position, the capacitance of measurement represent angle of inclination as 0 °, angular-sensitive structure is in level when measuring carrier run-off the straight Position, the capacitance now measured represent angle of inclination as 90 °.The present invention has a small volume, high resolution, it is low in energy consumption, low into Originally the features such as, being easy to batch production, unmanned plane, on-board equipment, satellite communication, engineering machinery, steel tower intelligence be can be widely applied to In the angle of bank measurement of platform such as monitoring, solar-tracking system.
A kind of high-precision MEMS angular transducers sensitive structure processing method of the present invention is processed using wet method bulk silicon etching Technique, the universal less shortcoming of mass, broach electric capacity etc. in traditional face silicon process technology is overcome, using three-decker form Improve measurement sensitivity.Processing method includes the processing method of glass pole plate, middle silicon pole plate adding based on KOH wet etchings Work method and upper glass pole plate 1, middle silicon pole plate 2, three parts of processing method of the dual field electrostatic bonding of lower glass pole plate 3. Comprise the following steps that：
Step 1: be illustrated in figure 5 the flow process chart of glass pole plate, glass pole plate 1 and lower glass pole plate 3 in completion Processing, idiographic flow are：
1.1st, sheet glass is cleaned up first, golden film is deposited in glass wafer side using beam methods, it is desirable to gold Thickness degree is 3000~4000 angstroms, and layers of chrome thickness is about 500 angstroms；
1.2nd, by being lithographically formed electrode zone in golden film, using it is golden chromium corrosive liquid erode beyond electrode zone Gold and chromium form electrode；
1.3 and then use chemical vapor deposition device PECVD (plasma activated chemical vapour deposition) is deposited on the glass sheet One layer of SiO2Film, it is desirable to which thickness is 2000~3000 angstroms；
1.4th, in SiO2By being lithographically formed medium diaphragm area on film, the SiO beyond medium diaphragm area is eroded2Formed and be situated between Plasma membrane；
1.5th, whole glass wafer scribing is formed into upper glass pole plate and lower glass pole plate with scribing machine, and draws spun gold and draw Line.
Step 2: being illustrated in figure 6 middle flow process chart of the silicon pole plate based on KOH wet etchings, middle silicon pole is completed The processing of plate 2, idiographic flow are：
2.1st, on silicon wafer, SiO is generated by high-temperature oxydation2Film, SiO21.2 μm of the thickness of film；Temperature setting is 1000 ~1200 DEG C, first it is passed through dry oxygen 30 minutes, then is passed through wet oxygen 3~4 hours, then be passed through dry oxygen 30 minutes, reduces temperature to normal temperature；
2.2nd, SiN is generated by chemical vapor deposition on the silicon wafer after high-temperature oxydationXFilm, 2500 angstroms of thickness；
2.3rd, mask corrosion：It is being deposited with SiNXOn the silicon wafer of film, mask corrosion area is formed by dual surface lithography, by silicon Disk is put into SiO2/SiNXCorrode 3 minutes in corrosive liquid, remove the SiN outside mask corrosion areaXFilm layer；
2.4th, body silicon pre-etching：In mask corrosion area, Ti Gui pre-etching area is formed by dual surface lithography, silicon wafer is put Enter SiO2/SiNXSiO in corrosive liquid until Ti Gui pre-etching area2Film is corroded completely；Reuse KOH wet etching body silicon Body silicon in pre-etching area, 28 μm of depth；
2.5th, body silicon deep etch：Region outside mask corrosion area carries out dual surface lithography, forms Ti Gui deep etch area, will Silicon chip is put into SiO2/SiNXCorrode corrosion up to the SiO in Ti Gui deep etch area2Film is corroded completely, reuses KOH wet methods Corrode body silicon, until the body silicon in Ti Gui pre-etching area is corroded completely；
2.6th, crevice corrosion：The silicon wafer that step 2.5 is generated is put into SiO2/SiNXCorrode in corrosive liquid, until mask is rotten Lose the SiO in area2Film is corroded completely；The whole silicon wafer of KOH wet etchings is reused, corrosion depth (gap) is 6 μm；
2.7th, by remaining SiO on silicon wafer2/SiNXFilm carries out scribing after all removing, in welding disking area evaporation golden film life Into pad, middle silicon pole plate is generated, and draw spun gold lead.
Step 3: it is illustrated in figure 7 glass pole plate 1, middle silicon pole plate 2, lower glass pole plate 3 dual field electrostatic bonding Schematic diagram, idiographic flow are：
3.1st, 3 three upper glass pole plate 1, middle silicon pole plate 2, lower glass pole plate alignments, bonding is fixed on by heat-conducting block 5 On stove, bonding furnace temperature is arranged on 250 DEG C~450 DEG C；
Silicon pole plate 2 connects anode among when the 3.2nd, being bonded, and upper glass pole plate 1 and lower glass pole plate 3 connect negative electrode, apply direct current 600V~800V is pressed, forms dual field, when electric current drops to 0.01mA, closes DC voltage；
3.3rd, sensitive structure is down to normal temperature with bonding stove with 5 DEG C/min speed, and bonding is completed.
The high-precision MEMS angular transducers sensitive structure processing method of the present invention, processing method select layer glass up and down Three layers of differential capacitor pole plate form of middle silicon structure, middle silicon structure is thicker, can form larger mass, improves angle and passes The sensitivity of sensor；Using the processing method based on KOH wet etchings, the consistent of middle silicon pole plate positive and negative size can be ensured Property, and the symmetry of the thickness of cantilever beam and gap size；It is double using upper glass pole plate, middle silicon pole plate, lower glass pole plate The processing method of E field electrostatic bonding, the influence that electrostatic force in bonding process puts structure to silicon is effectively reduced, prevents adsorption phenomena Generation, technique processing method can obtain preferable surface quality after dual field electrostatic bonding, less upper acoplanarity displacement, Less residual stress, higher bonding yield rate.
The content not being described in detail in description of the invention belongs to the known technology of professional and technical personnel in the field.

Claims (10)

  1. A kind of 1. high-precision MEMS angular transducers sensitive structure, it is characterised in that：Including upper glass pole plate (1), middle silicon pole Plate (2), lower glass pole plate (3) and spun gold lead (4), middle silicon pole plate (2) are located at upper glass pole plate (1), lower glass pole plate (3) Between；Upper glass pole plate (1), middle silicon pole plate (2), the metal pad on lower glass pole plate (3) draw spun gold lead respectively (4)；Upper glass pole plate (1), middle silicon pole plate (2), lower glass pole plate (3) pass through dual field electrostatic bonding method glass material Material is with forming the SiO being connected between silicon materials2Layer, and capacitance signal is drawn by spun gold lead (4).
  2. A kind of 2. high-precision MEMS angular transducers sensitive structure according to claim 1, it is characterised in that：The upper glass The material of glass pole plate (1) or lower glass pole plate (3) is Pai Ruikesi 7740, the material side of thickness 0.8mm, Pai Ruikesi 7740 Surface deposition golden film, golden film surface deposition SiO2Deielectric-coating.
  3. A kind of 3. high-precision MEMS angular transducers sensitive structure according to claim 1, it is characterised in that：The middle silicon pole The material of plate (2) is<100>The monocrystalline silicon of crystal orientation, thickness 0.38mm, sensitive-mass block (21) size of middle silicon pole plate (2) For 4.8mm × 4.8mm × 0.368mm；The size of cantilever beam (22) is 1.2mm × 1mm × 0.03mm, two cantilever beams (22) Spacing is 1.5mm.
  4. 4. a kind of processing method of high-precision MEMS angular transducers sensitive structure, it is characterised in that comprise the following steps：
    Step 1: golden film is deposited on the side surface of glass material one；
    Step 2: erode the gold beyond electrode zone by being lithographically formed electrode zone in golden film and chromium forms electrode；
    Step 3: deposit SiO on the electrode zone formed by chemical vapor deposition in step 22Film；
    Step 4: in SiO2By being lithographically formed medium diaphragm area on film, erode the SiO2 beyond medium diaphragm area and form medium Film；
    Step 5: the monolithic glass disk scribing formed in step 1~step 4 is formed into upper glass pole plate (1) and lower glass Pole plate (3), and draw spun gold lead (4)；
    Step 6: middle silicon pole plate (2) is formed using KOH wet etching methods processing silicon wafer；
    Step 7: using dual field electrostatic bonding method by upper glass pole plate (1), middle silicon pole plate (2), lower glass pole plate (3) It is aligned, middle silicon pole plate (2) is placed between glass pole plate (1), lower glass pole plate (3), fixed by heat-conducting block (5) On bonding stove；Middle silicon pole plate (2) connects anode, and upper glass pole plate (1) and lower glass pole plate (3) connect negative electrode, apply direct current Swaging starts electrostatic bonding into dual field；When electric current drops to the current threshold of setting, DC voltage is closed, is cooled the temperature to Normal temperature.
  5. 5. a kind of processing method of high-precision MEMS angular transducers sensitive structure according to claim 1, its feature exist In the step 6 comprises the following steps that：
    5.1st, on silicon wafer, SiO is generated by high-temperature oxydation2Film, SiO21.2 μm of the thickness of film；Temperature setting be 1000~ 1200 DEG C, first it is passed through dry oxygen 30 minutes, then is passed through wet oxygen 3~4 hours, then be passed through dry oxygen 30 minutes, reduces temperature to normal temperature；
    5.2nd, SiN is generated by chemical vapor deposition on the silicon wafer after high-temperature oxydationXFilm, 2500 angstroms of thickness；
    5.3rd, it is being deposited with SiNXOn the silicon wafer of film, mask corrosion area is formed by dual surface lithography, silicon wafer is put into SiO2/ SiNXCorrode 3 minutes in corrosive liquid, remove the SiN outside mask corrosion areaXFilm layer；
    5.4th, in mask corrosion area, Ti Gui pre-etching area is formed by dual surface lithography, silicon wafer is put into SiO2/SiNXCorrosion SiO in liquid until Ti Gui pre-etching area2Film is corroded completely；Reuse the body in KOH wet etching Ti Gui pre-etching area Silicon, 28 μm of depth；
    5.5th, the region outside mask corrosion area carries out dual surface lithography, forms Ti Gui deep etch area, silicon chip is put into SiO2/ SiNXCorrode corrosion up to the SiO in Ti Gui deep etch area2Film is corroded completely, reuses KOH wet etching body silicon, until Body silicon in Ti Gui pre-etching area is corroded completely；
    5.6th, the silicon wafer for generating step 5.5 is put into SiO2/SiNXCorrode in corrosive liquid, the SiO in mask corrosion area2 Film is corroded completely；The whole silicon wafer of KOH wet etchings is reused, corrosion depth is 6 μm；
    5.7th, by remaining SiO on silicon wafer2/SiNXFilm carries out scribing after all removing, in welding disking area evaporation golden film generation weldering Disk, middle silicon pole plate (2) is generated, and draw spun gold lead (4).
  6. 6. a kind of processing method of high-precision MEMS angular transducers sensitive structure according to claim 1 or 2, its feature It is, 3000~4000 angstroms of the layer gold thickness of golden film in the step 1, layers of chrome thickness is about 500 angstroms.
  7. 7. a kind of processing method of high-precision MEMS angular transducers sensitive structure according to claim 1 or 2, its feature It is, SiO in the step 322000~3000 angstroms of the thickness of film.
  8. 8. a kind of processing method of high-precision MEMS angular transducers sensitive structure according to claim 1 or 2, its feature It is, the temperature setting of stove is bonded in the step 7 in the range of 250 DEG C~450 DEG C.
  9. 9. a kind of processing method of high-precision MEMS angular transducers sensitive structure according to claim 1 or 2, its feature It is, the scope of DC voltage is 600V~800V in the step 7.
  10. 10. a kind of processing method of high-precision MEMS angular transducers sensitive structure according to claim 1 or 2, it is special Sign is that current threshold is 0.01mA in the step 7.
CN201710633123.2A 2017-07-28 2017-07-28 A kind of high-precision MEMS angular transducers sensitive structure and processing method Pending CN107478198A (en)

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CN113916255A (en) * 2021-08-31 2022-01-11 北京航天控制仪器研究所 Manufacturing method of MEMS inertial device accurate positioning structure for irradiation test

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Application publication date: 20171215