CN107471087A - It is a kind of to prevent crystal column surface from the method damaged occur - Google Patents
It is a kind of to prevent crystal column surface from the method damaged occur Download PDFInfo
- Publication number
- CN107471087A CN107471087A CN201710823456.1A CN201710823456A CN107471087A CN 107471087 A CN107471087 A CN 107471087A CN 201710823456 A CN201710823456 A CN 201710823456A CN 107471087 A CN107471087 A CN 107471087A
- Authority
- CN
- China
- Prior art keywords
- wafer
- grinding
- film layer
- polishing pad
- liquid film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Prevent crystal column surface from the method damaged occur the invention provides a kind of, applied to chemical mechanical milling tech；Wherein, following steps are specifically included：Step S1, one first grinding liquid film layer is formed in the surface of wafer；Step S2, lapping device is ground by the first grinding liquid film layer to the surface of wafer；Step S3, the surface of the wafer after grinding is cleaned, to remove the first grinding liquid film layer residued on the surface and lapping device of wafer.The beneficial effect of its technical scheme is, after operation is ground first, by being cleaned to the crystal column surface after grinding, the the first grinding liquid film layer i.e. accessory substance that crystal column surface is residued in grinding technics can be effectively removed, avoids the problem of accessory substance causes damage in follow-up grinding operation to the crystal grain of crystal column surface.
Description
Technical field
The present invention relates to semiconductor preparation field, more particularly to a kind of prevent crystal column surface from the method damaged occur.
Background technology
In wafer manufacture, with the diminution of the upgrading of process technique, wire and grid size, photoetching
(Lithography) requirement more and more higher of the technology to the planarization (Non-uniformity) of crystal column surface.And chemical machine
Tool grinding (chemical mechanical polish, CMP), which is also known as, to be chemically-mechanicapolish polished, and its principle is chemical attack effect
The process technology being combined with mechanical removal effect, it is the skill that surface global planarization can be uniquely realized in current machining
Art.But in grinding technics, due to the surface close contact of the polishing pad on abrasive disk and wafer, formed after its grinding
Accessory substance, scratch easily is produced to the crystal grain of crystal column surface, and then cause failure of the wafer at electrical aspect.
The content of the invention
For the above mentioned problem present in grinding technics in the prior art, one kind is now provided and is intended in grinding technics to residual
Stay the accessory substance in crystal column surface to carry out cleaning removal, avoid accessory substance from producing damage to the surface of wafer in grinding, ensure
The method of fabrication parameter.
Concrete technical scheme is as follows：
It is a kind of to prevent crystal column surface from the method damaged occur, applied to chemical mechanical milling tech, wherein, there is provided a polishing
Component, to the wafer that fixation is to be ground；
A lapping device is provided, positioned at the lower section of the polishing assembly, to the institute being fixed in the polishing assembly
Wafer is stated to be ground；
Specifically include following steps：
Step S1, one first grinding liquid film layer is formed in the surface of the wafer；
Step S2, described lapping device is ground by the first grinding liquid film layer to the surface of the wafer
Mill；
Step S3, the surface of the wafer after grinding is cleaned, with remove residue in the surface of the wafer with
And the first grinding liquid film layer on the lapping device.
Preferably, there is provided a nozzle, to spray one first lapping liquid；The lapping device provides an abrasive disk, described
A polishing pad is provided with the top of abrasive disk；
The method for forming the first grinding liquid film layer, specifically includes following steps：
Step A1, first lapping liquid is sprayed to the polishing pad by the nozzle；
Step A2, first lapping liquid of sprinkling is under the turning effort of the polishing pad, in the polishing pad and institute
State and uniformly form the first grinding liquid film layer between the surface of wafer.
Preferably, it is further comprising the steps of after the step S3：
Step S4, the surface of the wafer after cleaning forms one second grinding liquid film layer again；
Step S5, described lapping device is ground by the second liquid grinding layer to the surface of the wafer.
Preferably, there is provided a nozzle, to spray one second lapping liquid；
The lapping device provides an abrasive disk, and a polishing pad is provided with the top of the abrasive disk；
The method for forming the second grinding liquid film layer, specifically includes following steps：
Step B1, second lapping liquid is sprayed to the polishing pad by the nozzle；
Step B2, second lapping liquid of sprinkling is under the turning effort of the abrasive disk, in the polishing pad and institute
State and uniformly form the second grinding liquid film layer between the surface of wafer.
Preferably, the nozzle is connected with a mixing arrangement, and the mixing arrangement is connected with multiple solution lines；
A flow controller is each provided between the solution line and the mixing arrangement；
The solution line includes a detergent line, and the detergent line is to export cleaning solution, and by described
The cleaning solution is sprayed on the polishing pad by shower nozzle, is carried out with the surface to the wafer and the polishing pad clear
Wash.
Preferably, the cleaning solvent is deionized water.
Preferably, first lapping liquid is made up of abrasive particle, soda acid agent, deionized water and additive, and/or
Second lapping liquid is made up of abrasive particle, soda acid agent, deionized water and additive.
Preferably, the polishing pad is made up of polyurethane material.
Also include a kind of milling apparatus being applied in cmp, wherein, prevent wafer table suitable for above-mentioned
There is the method damaged in face.
Above-mentioned technical proposal has the following advantages that or beneficial effect：After operation is ground first, after to grinding
Crystal column surface cleaned, can effectively remove the first grinding liquid film that crystal column surface is residued in grinding technics
Layer is accessory substance, avoids the problem of accessory substance causes damage in follow-up grinding operation to the crystal grain of crystal column surface.
Brief description of the drawings
With reference to appended accompanying drawing, more fully to describe embodiments of the invention.However, appended accompanying drawing be merely to illustrate and
Illustrate, and be not meant to limit the scope of the invention.
Fig. 1 is a kind of flow chart for the embodiment for preventing crystal column surface from the method damaged occur of the present invention；
Fig. 2 is in a kind of embodiment for preventing crystal column surface from the method damaged occur of the present invention, on forming the first grinding
The flow chart of fluid film layer；
Fig. 3 is in a kind of embodiment for preventing crystal column surface from the method damaged occur of the present invention, on to the crystalline substance after cleaning
The flow chart that circle is ground；
Fig. 4 is in a kind of embodiment for preventing crystal column surface from the method damaged occur of the present invention, on forming the first grinding
The flow chart of fluid film layer.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art obtained on the premise of creative work is not made it is all its
His embodiment, belongs to the scope of protection of the invention.
It should be noted that in the case where not conflicting, the feature in embodiment and embodiment in the present invention can phase
Mutually combination.
The invention will be further described with specific embodiment below in conjunction with the accompanying drawings, but not as limiting to the invention.
Technical scheme includes a kind of preventing crystal column surface from the method damaged occur.
A kind of embodiment for preventing crystal column surface from the method damaged occur, applied to chemical mechanical milling tech, wherein, carry
For a polishing assembly, to the wafer that fixation is to be ground；
A lapping device is provided, positioned at the lower section of polishing assembly, to be ground to the wafer being fixed in polishing assembly
Mill；
As shown in figure 1, specifically include following steps：
Step S1, one first grinding liquid film layer is formed in the surface of wafer；
Step S2, lapping device is ground by the first grinding liquid film layer to the surface of wafer；
Step S3, the surface of the wafer after grinding is cleaned, filled with removing the surface for residuing in wafer and grinding
The the first grinding liquid film layer put.
For in the prior art, when being ground technique, during grinding operation twice is carried out, grinding first remains in
The accessory substance of crystal column surface, the defects of causing to damage to the crystal grain of crystal column surface in next grinding operation.
In the present invention, when being ground operation first, lapping device is by the first grinding liquid film layer to wafer
After surface is ground, the surface of the wafer after grinding is cleaned and remains in the first lapping liquid of crystal column surface to remove
Thin-film layers are above-mentioned accessory substance, after accessory substance is removed, when being subsequently ground operation, it is possible to prevente effectively from because
The defects of causing the crystal grain grinding to crystal column surface to damage for the presence of accessory substance.
In a kind of preferably embodiment, there is provided a nozzle, to spray one first lapping liquid；Lapping device provides one
Abrasive disk, a polishing pad is provided with the top of abrasive disk；
The method for forming the first grinding liquid film layer, as shown in Fig. 2 specifically including following steps：
Step A1, the first lapping liquid is sprayed to polishing pad by nozzle；
Step A2, the first lapping liquid of sprinkling is under the turning effort of polishing pad, between polishing pad and the surface of wafer
It is uniform to form the first grinding liquid film layer.
In above-mentioned technical proposal, wafer is fixed on polishing assembly, when being ground operation, polishing assembly provides one
Fixed pressure makes the surface of wafer be pressed on polishing pad, and the first lapping liquid now sprayed is between the surface of wafer and polishing pad
Flowing, then the first lapping liquid is in the presence of the transmission of polishing pad and centrifugal force, between the surface of wafer and polishing pad
Even one layer of first grinding liquid film layer of formation.
Wherein, the surfacing of the chemical composition in lapping liquid and wafer produces chemical reaction, and insoluble material is converted
For readily soluble material, or the high material of hardness softened, then by the micromechanics rubbing action of abrasive particle by these chemistry
Reactant removes from the surface of wafer, dissolves in the liquid of flowing and takes away, i.e., in chemical striping and the alternation procedure of mechanical striping
The middle purpose for realizing planarization.
In a kind of preferably embodiment, after step S3, as shown in figure 3, further comprising the steps of：
Step S4, the surface of the wafer after cleaning forms one second grinding liquid film layer again；
Step S5, lapping device is ground by second liquid grinding layer to the surface of wafer.
In above-mentioned technical proposal, in follow-up grinding operation, due to correlation being remained in grinding operation before
The first grinding liquid film layer be that accessory substance removes, therefore can avoid the occurrence of accessory substance to wafer table in this grinding operation
The crystal grain in face causes the problem of damage.
In a kind of preferably embodiment, there is provided a nozzle, to spray one second lapping liquid；
Lapping device provides an abrasive disk, and a polishing pad is provided with the top of abrasive disk；
The method for forming the second grinding liquid film layer, as shown in figure 4, specifically including following steps：
Step B1, the second lapping liquid is sprayed to polishing pad by nozzle；
Step B2, the second lapping liquid of sprinkling is under the turning effort of abrasive disk, between polishing pad and the surface of wafer
It is uniform to form the second grinding liquid film layer.
In above-mentioned technical proposal, the method for the second grinding liquid film layer and the method for the first grinding liquid film layer are formed
Essentially identical, difference is on lapping liquid, therefore here is omitted.
In a kind of preferably embodiment, nozzle is connected with a mixing arrangement, and mixing arrangement is connected with multiple solution conduits
Road；
A flow controller is each provided between solution line and mixing arrangement；
Solution line includes a detergent line, and detergent line will be cleaned by shower nozzle molten to export cleaning solution
Liquid is sprayed on polishing pad, is cleaned with the surface to wafer and polishing pad.
In a kind of preferably embodiment, cleaning solvent is deionized water.
In a kind of preferably embodiment, the first lapping liquid is made up of abrasive particle, soda acid agent, deionized water and additive.
In a kind of preferably embodiment, the second lapping liquid is made up of abrasive particle, soda acid agent, deionized water and additive.
, it is necessary to which explanation is that component in lapping liquid is separately deposited by different fluid pipelines in above-mentioned technical proposal
Storage, the first above-mentioned lapping liquid and the second lapping liquid export different components in mixing arrangement particular by different appearance liquid pipelines
In mixed, ultimately form the first lapping liquid or the second lapping liquid.
And when exporting cleaning solution, remaining solution line can be closed, only open detergent line, by detergent line
Cleaning solution export on abrasive disk with the first grinding liquid film layer for being remained on the surface to polishing pad and wafer i.e.
Accessory substance is removed.
In a kind of preferably embodiment, polishing pad is made up of polyurethane material.
In above-mentioned technical proposal, polishing pad may include hard packing or cushion.
Preferred embodiments of the present invention are the foregoing is only, not thereby limit embodiments of the present invention and protection model
Enclose, to those skilled in the art, should can appreciate that all with made by description of the invention and diagramatic content
Scheme obtained by equivalent substitution and obvious change, should be included in protection scope of the present invention.
Claims (8)
1. a kind of prevent crystal column surface from the method damaged occur, applied to chemical mechanical milling tech, it is characterised in that provides one
Polishing assembly, to the wafer that fixation is to be ground；
A lapping device is provided, positioned at the lower section of the polishing assembly, to the crystalline substance being fixed in the polishing assembly
Circle is ground；
Specifically include following steps：
Step S1, one first grinding liquid film layer is formed in the surface of the wafer；
Step S2, described lapping device is ground by the first grinding liquid film layer to the surface of the wafer；
Step S3, the surface of the wafer after grinding is cleaned, to remove the surface and the institute that residue in the wafer
State the first grinding liquid film layer on lapping device.
2. the method according to claim 1 for preventing damage a, it is characterised in that nozzle is provided, to spray one
First lapping liquid；The lapping device provides an abrasive disk, and a polishing pad is provided with the top of the abrasive disk；
The method for forming the first grinding liquid film layer, specifically includes following steps：
Step A1, first lapping liquid is sprayed to the polishing pad by the nozzle；
Step A2, first lapping liquid of sprinkling is under the turning effort of the polishing pad, in the polishing pad and the crystalline substance
The first grinding liquid film layer is uniformly formed between round surface.
3. the method according to claim 1 for preventing damage, it is characterised in that after the step S3, in addition to
Lower step：
Step S4, the surface of the wafer after cleaning forms one second grinding liquid film layer again；
Step S5, described lapping device is ground by the second liquid grinding layer to the surface of the wafer.
4. according to claim 3 prevent crystal column surface from the method damaged occur, it is characterised in that provides a nozzle, uses
To spray one second lapping liquid；
The lapping device provides an abrasive disk, and a polishing pad is provided with the top of the abrasive disk；
The method for forming the second grinding liquid film layer, specifically includes following steps：
Step B1, second lapping liquid is sprayed to the polishing pad by the nozzle；
Step B2, second lapping liquid of sprinkling is under the turning effort of the abrasive disk, in the polishing pad and the crystalline substance
The second grinding liquid film layer is uniformly formed between round surface.
5. according to claim 2 prevent crystal column surface from the method damaged occur, it is characterised in that the nozzle is connected with
One mixing arrangement, the mixing arrangement are connected with multiple solution lines；
A flow controller is each provided between the solution line and the mixing arrangement；
The solution line includes a detergent line, and the detergent line passes through the shower nozzle to export cleaning solution
The cleaning solution is sprayed on the polishing pad, cleaned with the surface to the wafer and the polishing pad.
6. according to claim 5 prevent crystal column surface from the method damaged occur, it is characterised in that the cleaning solvent is
Deionized water.
7. according to claim 3 prevent crystal column surface from the method damaged occur, it is characterised in that first lapping liquid
It is made up of abrasive particle, soda acid agent, deionized water and additive, and/or
Second lapping liquid is made up of abrasive particle, soda acid agent, deionized water and additive.
8. prevent crystal column surface from the method damaged occur according to claim 2 or 4, it is characterised in that the polishing pad
It is made up of polyurethane material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710823456.1A CN107471087A (en) | 2017-09-13 | 2017-09-13 | It is a kind of to prevent crystal column surface from the method damaged occur |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710823456.1A CN107471087A (en) | 2017-09-13 | 2017-09-13 | It is a kind of to prevent crystal column surface from the method damaged occur |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107471087A true CN107471087A (en) | 2017-12-15 |
Family
ID=60584433
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710823456.1A Pending CN107471087A (en) | 2017-09-13 | 2017-09-13 | It is a kind of to prevent crystal column surface from the method damaged occur |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107471087A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030148615A1 (en) * | 2002-02-06 | 2003-08-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chemical mechanical polisher equipped with chilled retaining ring and method of using |
| US20070184761A1 (en) * | 2005-07-15 | 2007-08-09 | Samsung Electronics Co., Ltd. | Method and apparatus for measuring abrasion amount and pad friction force of polishing pad using thickness change of slurry film |
| CN201178090Y (en) * | 2008-01-11 | 2009-01-07 | 浙江工业大学 | A method for measuring wafer liquid film middle variant in CMP process |
| CN104440497A (en) * | 2014-11-24 | 2015-03-25 | 蓝思科技股份有限公司 | Polishing device and method for cambered surfaces of mobile phone panels |
| CN104802068A (en) * | 2014-01-24 | 2015-07-29 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing method |
| CN105390417A (en) * | 2014-08-26 | 2016-03-09 | 株式会社荏原制作所 | Buffing apparatus, and substrate processing apparatus |
| CN105817991A (en) * | 2015-01-06 | 2016-08-03 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical grinding method |
-
2017
- 2017-09-13 CN CN201710823456.1A patent/CN107471087A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030148615A1 (en) * | 2002-02-06 | 2003-08-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chemical mechanical polisher equipped with chilled retaining ring and method of using |
| US20070184761A1 (en) * | 2005-07-15 | 2007-08-09 | Samsung Electronics Co., Ltd. | Method and apparatus for measuring abrasion amount and pad friction force of polishing pad using thickness change of slurry film |
| CN201178090Y (en) * | 2008-01-11 | 2009-01-07 | 浙江工业大学 | A method for measuring wafer liquid film middle variant in CMP process |
| CN104802068A (en) * | 2014-01-24 | 2015-07-29 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing method |
| CN105390417A (en) * | 2014-08-26 | 2016-03-09 | 株式会社荏原制作所 | Buffing apparatus, and substrate processing apparatus |
| CN104440497A (en) * | 2014-11-24 | 2015-03-25 | 蓝思科技股份有限公司 | Polishing device and method for cambered surfaces of mobile phone panels |
| CN105817991A (en) * | 2015-01-06 | 2016-08-03 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical grinding method |
Non-Patent Citations (1)
| Title |
|---|
| 王菲，王晓华著: "《光泵浦垂直外腔面发射半导体激光技术》", 31 January 2016 * |
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| PB01 | Publication | ||
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Application publication date: 20171215 |