CN107431103A - 发光二极管封装和照明设备 - Google Patents

发光二极管封装和照明设备 Download PDF

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Publication number
CN107431103A
CN107431103A CN201680016088.3A CN201680016088A CN107431103A CN 107431103 A CN107431103 A CN 107431103A CN 201680016088 A CN201680016088 A CN 201680016088A CN 107431103 A CN107431103 A CN 107431103A
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CN
China
Prior art keywords
layer
type semiconductor
semiconductor layer
light emitting
segment
Prior art date
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Pending
Application number
CN201680016088.3A
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English (en)
Chinese (zh)
Inventor
徐在元
金会准
任范镇
洪俊喜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
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LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of CN107431103A publication Critical patent/CN107431103A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
CN201680016088.3A 2015-03-26 2016-03-16 发光二极管封装和照明设备 Pending CN107431103A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2015-0042659 2015-03-26
KR1020150042659A KR102434778B1 (ko) 2015-03-26 2015-03-26 발광 소자 패키지
PCT/KR2016/002612 WO2016153213A1 (ko) 2015-03-26 2016-03-16 발광 소자 패키지 및 조명 장치

Publications (1)

Publication Number Publication Date
CN107431103A true CN107431103A (zh) 2017-12-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680016088.3A Pending CN107431103A (zh) 2015-03-26 2016-03-16 发光二极管封装和照明设备

Country Status (6)

Country Link
US (1) US10381519B2 (enExample)
EP (1) EP3276683B1 (enExample)
JP (1) JP6811715B2 (enExample)
KR (1) KR102434778B1 (enExample)
CN (1) CN107431103A (enExample)
WO (1) WO2016153213A1 (enExample)

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CN109904285A (zh) * 2019-03-11 2019-06-18 合肥彩虹蓝光科技有限公司 一种发光二极管芯片及其制造方法
CN110214380A (zh) * 2017-01-25 2019-09-06 Lg 伊诺特有限公司 半导体器件
CN111063778A (zh) * 2018-10-16 2020-04-24 合肥彩虹蓝光科技有限公司 一种发光二极管结构
CN112789738A (zh) * 2018-05-17 2021-05-11 卡任特照明解决方案有限公司 具有窄绿色发射的荧光体
WO2021098156A1 (zh) * 2019-11-20 2021-05-27 厦门士兰明镓化合物半导体有限公司 倒装led芯片及其制造方法

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KR20180073866A (ko) 2016-12-23 2018-07-03 엘지이노텍 주식회사 반도체 소자
KR102722845B1 (ko) * 2017-01-25 2024-10-29 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자 및 그 제조방법, 반도체 소자 패키지, 객체 검출 장치
KR102327777B1 (ko) * 2017-03-30 2021-11-17 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자, 반도체 소자 패키지, 객체 검출 장치
KR102308692B1 (ko) * 2017-03-30 2021-10-05 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자 및 그 제조방법, 반도체 소자 패키지, 객체 검출 장치
KR102311599B1 (ko) * 2017-03-30 2021-10-12 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자 및 그 제조방법, 반도체 소자 패키지
CN110651404B (zh) * 2017-05-19 2021-04-23 Lg 伊诺特有限公司 激光二极管
US10892297B2 (en) 2017-11-27 2021-01-12 Seoul Viosys Co., Ltd. Light emitting diode (LED) stack for a display
US12100696B2 (en) 2017-11-27 2024-09-24 Seoul Viosys Co., Ltd. Light emitting diode for display and display apparatus having the same
US11527519B2 (en) 2017-11-27 2022-12-13 Seoul Viosys Co., Ltd. LED unit for display and display apparatus having the same
US10892296B2 (en) * 2017-11-27 2021-01-12 Seoul Viosys Co., Ltd. Light emitting device having commonly connected LED sub-units
US11282981B2 (en) 2017-11-27 2022-03-22 Seoul Viosys Co., Ltd. Passivation covered light emitting unit stack
US10748881B2 (en) 2017-12-05 2020-08-18 Seoul Viosys Co., Ltd. Light emitting device with LED stack for display and display apparatus having the same
US10886327B2 (en) 2017-12-14 2021-01-05 Seoul Viosys Co., Ltd. Light emitting stacked structure and display device having the same
US11552057B2 (en) 2017-12-20 2023-01-10 Seoul Viosys Co., Ltd. LED unit for display and display apparatus having the same
US11522006B2 (en) 2017-12-21 2022-12-06 Seoul Viosys Co., Ltd. Light emitting stacked structure and display device having the same
US11552061B2 (en) 2017-12-22 2023-01-10 Seoul Viosys Co., Ltd. Light emitting device with LED stack for display and display apparatus having the same
US11114499B2 (en) 2018-01-02 2021-09-07 Seoul Viosys Co., Ltd. Display device having light emitting stacked structure
US10784240B2 (en) 2018-01-03 2020-09-22 Seoul Viosys Co., Ltd. Light emitting device with LED stack for display and display apparatus having the same
KR102093816B1 (ko) * 2019-02-19 2020-03-26 엘지이노텍 주식회사 반도체 소자
KR102212952B1 (ko) * 2019-05-07 2021-02-08 엘지이노텍 주식회사 반도체 소자
WO2024202662A1 (ja) * 2023-03-24 2024-10-03 ソニーセミコンダクタソリューションズ株式会社 発光装置および発光装置の製造方法ならびに画像表示装置

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CN110214380A (zh) * 2017-01-25 2019-09-06 Lg 伊诺特有限公司 半导体器件
US11637227B2 (en) 2017-01-25 2023-04-25 Suzhou Lekin Semiconductor Co., Ltd. Semiconductor device including multiple distributed bragg reflector layers
CN110214380B (zh) * 2017-01-25 2024-04-09 苏州立琻半导体有限公司 半导体器件
CN112789738A (zh) * 2018-05-17 2021-05-11 卡任特照明解决方案有限公司 具有窄绿色发射的荧光体
CN111063778A (zh) * 2018-10-16 2020-04-24 合肥彩虹蓝光科技有限公司 一种发光二极管结构
CN109904285A (zh) * 2019-03-11 2019-06-18 合肥彩虹蓝光科技有限公司 一种发光二极管芯片及其制造方法
WO2021098156A1 (zh) * 2019-11-20 2021-05-27 厦门士兰明镓化合物半导体有限公司 倒装led芯片及其制造方法

Also Published As

Publication number Publication date
US20180026163A1 (en) 2018-01-25
JP2018509758A (ja) 2018-04-05
EP3276683A1 (en) 2018-01-31
KR102434778B1 (ko) 2022-08-23
EP3276683A4 (en) 2018-09-12
US10381519B2 (en) 2019-08-13
WO2016153213A1 (ko) 2016-09-29
EP3276683B1 (en) 2020-03-11
JP6811715B2 (ja) 2021-01-13
KR20160115301A (ko) 2016-10-06

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