CN107422420B - A kind of three-dimensional photon device interconnection method based on melting direct write - Google Patents

A kind of three-dimensional photon device interconnection method based on melting direct write Download PDF

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Publication number
CN107422420B
CN107422420B CN201710756778.9A CN201710756778A CN107422420B CN 107422420 B CN107422420 B CN 107422420B CN 201710756778 A CN201710756778 A CN 201710756778A CN 107422420 B CN107422420 B CN 107422420B
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direct write
light
nozzle
guide material
melting
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CN107422420A (en
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郭建军
唐玉蓉
徐鼎鼎
雷雨
许高杰
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Ningbo Institute of Material Technology and Engineering of CAS
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Ningbo Institute of Material Technology and Engineering of CAS
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/255Splicing of light guides, e.g. by fusion or bonding
    • G02B6/2551Splicing of light guides, e.g. by fusion or bonding using thermal methods, e.g. fusion welding by arc discharge, laser beam, plasma torch

Abstract

The invention discloses a kind of three-dimensional photon device interconnection methods based on melting direct write, comprising: step 1, the light-guide material of the high grade of transparency is melt into liquid in the heated molten bath with micro nozzle;Step 2, by high precision position moving stage mobile micro nozzle to the first bonding point, under static pressure effect, melting light-guide material is continuously squeezed out from micro nozzle, is bonded with the first bonding point;Step 3, mobile micro nozzle carries out bottom-up direct write, forms photon transmission optical fiber, then mobile micro nozzle to the second bonding point is bonded photon transmission optical fiber with the second bonding point, realizes the level interconnection of multilayer integrated optical circuit.Reproducible due to using melt liquid bonding techniques, production precision can reach nanoscale and fiber coupling is compatible, and three-dimensional glass light guide surface scattering loss obtained is small, be suitable for high integration three-dimensional photon device and high sensor.

Description

A kind of three-dimensional photon device interconnection method based on melting direct write
Technical field
The present invention relates to integrated optical circuit and integrated optical wave guide device field, in particular to a kind of three-dimensional based on melting direct write Photonic device interconnecting method.
Background technique
Integrated optical circuit is that a series of discrete optical devices, such as prism, lens, grating, photo-coupler are integrated and micro- The integrated optical system of the one kind formed after type.In integrated optical circuit, each optical element is formed in a wafer substrates On, it is connected with the optical waveguide formed in substrate interior or surface, is to solve original optical system miniaturization and improve whole The important channel of performance issue.The information capacity of integrated optical circuit processing is more much bigger than integrated circuit, while integrated optical circuit also has There is multidimensional information processing capacity, will be the basic device of next-generation optic communication.
In order to improve the density of information transmission, free space integrated optical circuit can be formed using three-dimensionally integrated optical path, make to collect Optical waveguide is not limited solely at the scope of optical path.Carried out data transmission by the light beam propagated in free space, is suitable for core Level connection between piece, makes interconnection density close to the diffraction limit of light, the limitation there is no channel to bandwidth, it is easy to accomplish weight Structure interconnection.Free space optical interconnection exchange network also has other than having the advantages that common to general light network and is easy to real Existing three-dimensional network, the advantages that interconnecting number is big, interconnection density is high, contactless interconnection.This technology is most inhaled in light network technology Gravitation.
For free space optical interconnection technology, the research of early stage, which is mainly concentrated in, utilizes technological maheup multistage light network The internet such as network, Crossbar and Mesh (US Patent 10460389), how in conventional two-dimensional planar structure electronics Optic communication is realized on the three-dimensional space of plug-in unit.For free space optical interconnection, the alignment issues of optical path are particularly pertinent.Although having very More the relevant technologies such as active and packaging passive alignment, autoregistration etc., but it is all less desirable.Moreover, many light network technologies are Based on hybrid integrated, the single-chip integration difficulty of photoelectric chip is very big.
High density interconnection channel can be provided using waveguide interconnection, most mature optical waveguide is optical fiber, is suitable in chip Or the interconnection between chip on this level.Most studied is to prepare lithium niobate (LiNbO with solid-state diffusion3) optical waveguide and Device prepares heterojunction semiconductor optical waveguide and device with extension.Semiconductor is the material with maximum nonlinear optics value, But the response time is limited and longer by Carrier Recombination.Glass has extremely low light loss and the characteristics such as easy to process, It is achieved integrated light guide on glass substrate.This optical waveguide generally uses ion exchange technique or chemical vapor deposition Two kinds of techniques are prepared.It is to prepare ultrafast full light modulation multifunction integrated optical circuit device that optical waveguide is quick in technique, facilitates processing Key.Therefore, there is still a need for be more applicable in flexible technology to push its functionization for light network.
Summary of the invention
The object of the present invention is to provide a kind of methods based on melting direct write three-dimensional photon device interconnection, for collecting in three-dimensional At free-space interconnection optical path is formed between optical path level, make interconnection density close to the diffraction limit of light, in multilayer integrated optical circuit Prepare multi-functional photon transmission channel small in size, compact-sized, that integrated level is high.
The technical solution of the present invention is as follows:
A kind of three-dimensional photon device interconnection method based on melting direct write, comprising:
Step 1, the light-guide material of the high grade of transparency is melt into liquid in the heated molten bath with micro nozzle;
Step 2, light is melted under static pressure effect by high precision position moving stage mobile micro nozzle to the first bonding point It leads material continuously to squeeze out from micro nozzle, be bonded with the first bonding point;
Step 3, mobile micro nozzle carries out bottom-up direct write, forms photon transmission optical fiber, then mobile micro nozzle Photon transmission optical fiber is bonded with the second bonding point to the second bonding point, realizes the level interconnection of multilayer integrated optical circuit.
The light-guide material is have Gao Sanjie polarizability tnesor, fast response time, minimal absorption coefficient and height The transparent material of environmental stability characteristic, comprising: quartz, glass, transparent plastic, infra-red material etc..These light-guide material light losses It consumes extremely low, and is easy to melt-processed, is particularly suitable for integrated light guide.
Preferably, the glass is unorganic glass, such glass chemistry property stabilization, component multiplicity, low-loss, Yi Jia Work, at low cost, further preferably, the glass is oxide glass, fluoride glass, chalcogenide glass, sulphur system monohalide glass Glass and multicomponent glass etc..Preferably, the transparent material is polymethyl methacrylate (PMMA), polycarbonate (PC) Deng.
Preferably, the mode heated to light-guide material is resistance heating, electric arc heated, induction heating, electron beam heat, One of dielectric heating, plasma heating are a variety of compound.Further preferably, it according to the characteristic of light-guide material, uses Heating method appropriate carries out heating melting to light-guide material.When light-guide material is transparent plastic, using resistance heating;Light guide material When material is glass, using induction heating, the fusing point of glass is higher, and the heating efficiency of induction heating mode is higher, and heating rate is more Fastly, glass melting can be made quickly at liquid using induction heating glass, it is energy saving.
After light-guide material melting, accurately, steadily controlling melting light-guide material and spraying from micro nozzle is to improve Therefore one of the key factor of optical waveguide performance during direct write, according to jet diameters and passage length, is heated to light guide Material melt viscosity reaches 100~1000Pas, then assists the static pressure of 0.1~1000kPa of rear end, makes to melt light-guide material It is squeezed out by micro nozzle uniformly continuous.If pressure is inadequate, the optical fiber surface that direct write goes out will appear bubble, not smooth enough, very Intermittently to meeting, it cannot draw a straight line, and hypertonia then can agglomerate or block.Therefore, it is necessary to according to melting temperature The viscosity of melt under the conditions of degree, suitable static pressure condition is set with guarantee light-guide material melt can steady extruding, direct write obtains The interconnection fabric bubble-free that arrives, surface is smooth, loss is small.
The micro nozzle is connected with heated molten bath, is the discharge end of light-guide material melt.It is obtained for raising direct write mutual Even optical fiber quality (bubble-free, surface is smooth, loss is small), micro nozzle needs inner surface smooth, and with melt light-guide material It does not bond.Preferably, the micro nozzle can for one of ceramic nozzle, metallic nozzle, alloy nozzle or The combining nozzle of any various material in ceramics, Metal and Alloy material.
The method of the present invention is mainly used for freely interconnecting between three-dimensionally integrated optical path level.Preferably, the photon transmission light The optical signal of fibre connection same chip layer different parts, or the optical signal of the different chip layers of connection.It is, first bonding Point and the second bonding point are the output end or input terminal of same chip layer different parts optical signal or the first bonding point and the second key Chalaza is usually the output end or input terminal of different chip layer optical signals.It is mobile by micro nozzle in this way, in the defeated of optical signal Enter formation photon transmission access between end and output end.
Since direct-write methods have the characteristic of free space either direction or multiple and different direction light networks, the photon is passed Losing fibre can freely be orientated in space according to the needs of photon transmission direction or integrated optical circuit framework, therefore, preferably, institute Stating photon transmission optical fiber general diameter is 0.1~100 μm.The shape of the photon transmission optical fiber is straight line, in broken line, helix One or more of combinations, is also possible to irregular curved shape, realizes high-precision, high efficiency multilayer in free space to meet The level of integrated optical circuit interconnects.
Three-dimensional photon device interconnection method of the invention is only needed can be in different positions by simply melting direct writing technology Realize photonic interconnections between point, different levels, do not need alignment, figure conversion accuracy improves, at low cost, production method simply at It is ripe.
Reproducible due to using melt liquid bonding techniques, production precision can reach nanoscale and fiber coupling is simultaneous Hold, three-dimensional glass light guide surface scattering loss obtained is small, is suitable for high integration three-dimensional photon device and highly sensitive sensing Device.Therefore, present invention reduces the technology difficulty of free space processing optical path, the level for simplifying three-dimensionally integrated optical path was interconnected Journey;It is able to suppress the increase of surface roughness caused by conventional ion switching technology, three-dimensional glass optical waveguide refraction obtained simultaneously Rate contrast is big, improves yield rate and performance.
Detailed description of the invention
Fig. 1 is the straight-writing system structural schematic diagram of three-dimensional photon device interconnection in the preferred embodiment of the present invention;
Fig. 2 is the optical microscope of three-dimensional photon device interconnection process in the preferred embodiment of the present invention;
Fig. 3 is the scanning electron microscope (SEM) photograph of the glass structure of three-dimensional photon device interconnection in the present invention;
Fig. 4 is the scanning electron microscope (SEM) photograph of glass interconnection structure between three-dimensional photon device level in the preferred embodiment of the present invention.
Specific embodiment
For the purposes, technical schemes and advantages that the present invention is furture elucidated, below in conjunction with specific embodiment, and referring to attached Figure, the present invention is described in further detail.In attached drawing or embodiment description, similar or identical part all uses identical Figure number.The element or implementation for not being painted or describing in attached drawing, for known to those of ordinary skill in technical field Form.In addition, though can provide the demonstration of the parameter comprising particular value herein, it is to be understood that parameter is without being definitely equal to phase The value answered, but can be similar to be worth accordingly in acceptable error margin or design constraint.
Fig. 1 is the straight-writing system structural schematic diagram of three-dimensional photon device interconnection in the preferred embodiment of the present invention.Such as Fig. 1 institute Show, straight-writing system 100 is mainly by control system, system mobile platform (i.e. three-dimensional XYZ mobile platform), with micro nozzle 105 Molten bath 103 and heating system 102 form.Direct write process are as follows: high transparency light-guide material 110 is sent into molten by feeding mechanism Pond 103 is simultaneously melt into liquid melts 111 under the heat effect of heating system 102, which passes through 103 rear portion of molten bath Under the extruding of pressure 104, squeezed out from micro nozzle 105;Using precision piezoelectric displacement platform driving control system under process control Mobile platform, resolution ratio can achieve nanoscale, by mobile micro nozzle 105 to chip 120 make melt light-guide material with Bonding point bonding, by the bottom-up direct write of displacement platform micro nozzle 105, is continuously extruded into photon transmission optical path-interconnection Optical fiber 130;According to the combination of three-dimensional XYZ displacement platform moving direction and speed, various curves or folding can be formed in free space The transmission optical path of line.
Fig. 2 is the optical microscope of three-dimensional photon device interconnection process in the preferred embodiment of the present invention.As shown in Fig. 2, After high transparency light-guide material 110 is melt into liquid melts 111 in molten bath 103, under the action of surface tension, the liquid Melt 111 can form liquid meniscus in the exit of micro nozzle 105, as shown in Fig. 2 (a);The meniscus and chip 120 After bonding point point contact, it is bonded immediately in bonding point solidification since bonding point temperature is lower, which is usually light guide Partial melting, therefore the interconnection light that can go out with direct write occur for material (such as glass), bonding point and high-temp liquid contact rear surface Fibre forms secure bond, such as Fig. 2 (b);During subsequent direct write, with the movement of micro nozzle 105, the bonding point with it is miniature The interconnection fabric that uniform diameter is formed between nozzle 105, as shown in Fig. 2 (c).
In the present embodiment, due to using fused solution bonding techniques, precision can reach nanoscale.As shown in figure 3, should Interconnection fabric and photonic device substrate weld to form uniform solder joint, and the photonic interconnections optical fiber surface that direct write goes out is smooth, especially It is that solder joint can form uniform-spherical, so that the photonic interconnections line has extremely low light loss.Pass through control temperature and micro nozzle The diameter and welding spot size of 105 controllable shown photonic interconnections optical fiber.
Embodiment 1
In the present embodiment, it is therefore an objective to prepare photon transmission optical fiber (optical waveguide) to connect the light of same chip layer different parts Signal.Specifically: by chalcogenide glass (As2S3) be placed in the miniature alloy nozzle molten bath for being 100 μm with diameter, and using electricity Heating method heated molten bath is felt to 1200 DEG C, chalcogenide glass is made to be melt into liquid, and melt viscosity is 700Pas at this time;Then, After melt extrusion to the first bonding point, then imposing the static pressure of 10kPa squeezes out melt continuously, at the same moving nozzle from bottom to Upper carry out direct write forms the straight line interconnection fabric that diameter is 100 μm to the second bonding point.
Embodiment 2
In the present embodiment, it is therefore an objective to prepare photon transmission optical fiber (optical waveguide) to connect the optical signal of different chip layers.Tool Body are as follows: by multicomponent glass (SiO2-CaO-Na2O it) is placed in the miniature ceramic nozzle molten bath for being 100 μm with diameter, and uses Electric arc heated mode heated molten bath makes SiO to 1000 DEG C2-CaO-Na2O is melt into liquid, at this point, melt viscosity is 1000Pa s;Then, after melt extrusion to the first bonding point, then imposing the static pressure of 800kPa squeezes out melt continuously, while mobile spray The bottom-up carry out direct write of mouth forms the curve interconnection fabric that diameter is 99 μm to the second bonding point.
Fig. 4 shows the curved shape glass interconnection optical fiber that the present embodiment obtains, the interconnection line be located at two layers of different chip it Between, to realize the transmission of different levels photon signal.
Embodiment 3
In the present embodiment, it is therefore an objective to prepare photon transmission optical fiber (optical waveguide) to connect the optical signal of different chip layers.Tool Body are as follows: by quartz glass (SiO2-GeO2) be placed in the miniature alloy nozzle molten bath for being 10 μm with diameter, and added using dielectric Hot mode heated molten bath makes SiO to 1200 DEG C2-GeO2It is melt into liquid, at this point, melt viscosity is 800Pas;Then, molten Body is squeezed out to the first bonding point, then imposing the static pressure of 9kPa squeezes out melt continuously, at the same moving nozzle it is bottom-up into Row direct write forms the helical curve interconnection fabric that diameter is 9 μm to the second bonding point.
Embodiment 4
In the present embodiment, it is therefore an objective to prepare photon transmission optical fiber (optical waveguide) to connect the optical signal of different chip layers.Tool Body are as follows: polycarbonate (PC) is placed in the miniature alloy nozzle molten bath for being 5 μm with diameter, and is added using resistance heating manner Pond is heated to 220 DEG C, PC is made to be melt into liquid, at this point, melt viscosity is 500Pas;Then, in melt extrusion to the first key After chalaza, then imposing the static pressure of 4kPa squeezes out melt continuously, while the bottom-up carry out direct write of moving nozzle, forms diameter For 4 μm of curve interconnection fabrics to the second bonding point.
Interconnecting method described above can be used as the passive device in fiber optic communication, as isolator, orientation or star-like misfortune clutch, Routing etc. in wavelength division multiplexer and integrated optical circuit.
Technical solution of the present invention and beneficial effect is described in detail in above-described specific embodiment, Ying Li Solution is not intended to restrict the invention the foregoing is merely presently most preferred embodiment of the invention, all in principle model of the invention Interior done any modification, supplementary, and equivalent replacement etc. are enclosed, should all be included in the protection scope of the present invention.

Claims (8)

1. a kind of three-dimensional photon device interconnection method based on melting direct write, comprising:
Step 1, the light-guide material of the high grade of transparency is melt into liquid in the heated molten bath with micro nozzle;
Step 2, light guide material is melted under static pressure effect by high precision position moving stage mobile micro nozzle to the first bonding point Material is continuously squeezed out from micro nozzle, is bonded with the first bonding point;
Step 3, mobile micro nozzle carries out bottom-up direct write, forms photon transmission optical fiber, then mobile micro nozzle is to the Two bonding points are bonded photon transmission optical fiber with the second bonding point, realize the level interconnection of multilayer integrated optical circuit;
During direct write, according to jet diameters and passage length, be heated to light-guide material melt viscosity reach 100~ 1000Pas, then the static pressure of 0.1~1000kPa of rear end is assisted, squeeze melting light-guide material by micro nozzle uniformly continuous Out;
The photon transmission fibre diameter is 0.1~100 μm.
2. the three-dimensional photon device interconnection method as described in claim 1 based on melting direct write, which is characterized in that the light guide Material is quartz, glass or transparent plastic.
3. the three-dimensional photon device interconnection method as described in claim 1 based on melting direct write, which is characterized in that the light guide Material is infra-red material.
4. the three-dimensional photon device interconnection method as described in claim 1 based on melting direct write, which is characterized in that light guide material Expect the mode of heating in resistance heating, electric arc heated, induction heating, electron beam heating, dielectric heating, plasma heating One or more combinations.
5. the three-dimensional photon device interconnection method as claimed in claim 3 based on melting direct write, which is characterized in that light-guide material When for transparent plastic, using resistance heating;When light-guide material is glass, using induction heating.
6. the three-dimensional photon device interconnection method as described in claim 1 based on melting direct write, which is characterized in that described miniature Nozzle can be any a variety of in one of ceramic nozzle, metallic nozzle, alloy nozzle or ceramics, Metal and Alloy material The combining nozzle of material.
7. the three-dimensional photon device interconnection method as described in claim 1 based on melting direct write, which is characterized in that the photon The shape of transmission fiber is the combination of one or more of straight line, broken line, helix.
8. the three-dimensional photon device interconnection method as described in any one of claims 1 to 7 based on melting direct write, feature exist In, the optical signal of the photon transmission optical fiber connection same chip layer different parts, or the optical signal of the different chip layers of connection.
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JP6534699B2 (en) * 2017-04-27 2019-06-26 株式会社豊田中央研究所 Optical circuit and method of manufacturing the same
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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10242149A (en) * 1997-02-27 1998-09-11 Nippon Telegr & Teleph Corp <Ntt> Method of connecting solder bumps
CN1531480A (en) * 2000-10-26 2004-09-22 ŵ��ķ Multilayered optical structures
CN101034186A (en) * 2007-04-17 2007-09-12 浙江大学 Three-dimensional multilayer vertical coupling optical interconnected structure and manufacturing method of soft lithography thereof
CN203733787U (en) * 2013-12-30 2014-07-23 苏州矩阵光电有限公司 Chip interconnection structure
CN105093418A (en) * 2015-08-25 2015-11-25 中国计量学院 Novel optical interconnection chip based on micro-nano optical fibers
CN106571871A (en) * 2015-10-13 2017-04-19 华为技术有限公司 Optical communication module and support plate
CN107009613A (en) * 2017-04-01 2017-08-04 中国科学院宁波材料技术与工程研究所 A kind of fabricating method of microlens array based on three-dimensional direct write

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10242149A (en) * 1997-02-27 1998-09-11 Nippon Telegr & Teleph Corp <Ntt> Method of connecting solder bumps
CN1531480A (en) * 2000-10-26 2004-09-22 ŵ��ķ Multilayered optical structures
CN101034186A (en) * 2007-04-17 2007-09-12 浙江大学 Three-dimensional multilayer vertical coupling optical interconnected structure and manufacturing method of soft lithography thereof
CN203733787U (en) * 2013-12-30 2014-07-23 苏州矩阵光电有限公司 Chip interconnection structure
CN105093418A (en) * 2015-08-25 2015-11-25 中国计量学院 Novel optical interconnection chip based on micro-nano optical fibers
CN106571871A (en) * 2015-10-13 2017-04-19 华为技术有限公司 Optical communication module and support plate
CN107009613A (en) * 2017-04-01 2017-08-04 中国科学院宁波材料技术与工程研究所 A kind of fabricating method of microlens array based on three-dimensional direct write

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