CN109143466A - A kind of hybrid integrated silicon optical chip, optical device and chip manufacture method - Google Patents
A kind of hybrid integrated silicon optical chip, optical device and chip manufacture method Download PDFInfo
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- CN109143466A CN109143466A CN201811011493.3A CN201811011493A CN109143466A CN 109143466 A CN109143466 A CN 109143466A CN 201811011493 A CN201811011493 A CN 201811011493A CN 109143466 A CN109143466 A CN 109143466A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12061—Silicon
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
- G02B2006/12176—Etching
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Abstract
The embodiment of the present invention provides a kind of hybrid integrated silicon optical chip, optical device and chip manufacture method.The chip includes silicon substrate；Silica covering on the silicon substrate；It is integrated in semiconductor laser chip, the first hybrid integrated waveguide, optical signal processing unit and the second hybrid integrated waveguide in the silica covering and being located on the silicon substrate respectively；The optical signal processing unit connects the first hybrid integrated waveguide by the first silicon waveguide, connects the second hybrid integrated waveguide by the second silicon waveguide, for being modulated/demodulation wave splitting/composing processing to optical signal；The first hybrid integrated waveguide includes one or more Si for semiconductor laser chip coupling3N4Waveguide, the second hybrid integrated waveguide include one or more Si for being used for Single-Mode Fiber Coupling3N4Waveguide.The chip coupling efficiency height and coupling tolerance are high.
Description
Technical field
The present embodiments relate to optic communication field of optoelectronic devices more particularly to a kind of hybrid integrated silicon optical chip,
Optical device and chip manufacture method.
Background technique
Silicon photon technology is the exploitation and integrated a new generation based on silicon materials, using existing CMOS technology progress optical device
Technology, in optic communication, data center, supercomputing and biology, national defence, AR/VR technology, intelligent automobile and unmanned plane etc. are many
Field will play the part of extremely critical role.There have been the investment and accumulation of more than ten years in the states such as USA and Europe in silicon photon field, and already
Form industrial advantage.It is predicted according to LightCounting, only silicon photon will just reach in 5 years in the product market of optical communication field
To 1,000,000,000 dollars or more.In the following ten or twenty year, the market of silicon photon technology more will be considerably beyond this number.
The advantages that current silicon photon technology is increasingly mature, high integration, small size, low-power consumption, integrated photoelectricity is looked steadily
Mesh, the following silicon photon technology would be possible to that current free-space coupling technology can be substituted, and silicon photon technology has solution
Long-range technological evolvement (high-speed, high integration) and the contradictory ability of cost.
Silicon photon chip can integrate other than laser include: high rate modulation device, transmission waveguide, coupler,
Passive chip and active chip are realized single-chip integration by high-speed Ge-Si detector etc., but coupled problem is there is also challenge,
Wherein silicon substrate laser technology is also immature at present, needs the laser of three-five by being coupled in silicon waveguide, optical fiber coupling
Conjunction is also an important difficult point in the commercialization of silicon photonic device, then how to realize high coupling efficiency, couples tolerance, Gao Ke greatly
By property, and rapid batch is able to achieve into production into urgent problem to be solved.
Summary of the invention
In view of the problems of the existing technology, the embodiment of the present invention provide a kind of hybrid integrated silicon optical chip, optical device and
Chip manufacture method.
In a first aspect, the embodiment of the present invention provides a kind of hybrid integrated silicon optical chip, comprising:
Silicon substrate；
Silica covering on the silicon substrate；
It is integrated in the semiconductor laser chip in the silica covering and being located on the silicon substrate, first respectively
Hybrid integrated waveguide, optical signal processing unit and the second hybrid integrated waveguide；
The optical signal processing unit connects the first hybrid integrated waveguide by the first silicon waveguide, passes through the second silicon wave
Connection the second hybrid integrated waveguide is led, for being modulated/demodulation wave splitting/composing processing to optical signal；
The first hybrid integrated waveguide includes one or more Si for being used for semiconductor laser chip3N4Waveguide, it is described
Second hybrid integrated waveguide includes one or more Si for being used for Single-Mode Fiber Coupling3N4Waveguide；
The semiconductor laser chip output optical signal is coupled into the Si of the first hybrid integrated waveguide3N4Wave
It leads, passes through the Si of the first hybrid integrated waveguide3N4Waveguide is coupled into the first silicon waveguide, and is transmitted to the light letter
Number processing unit is transmitted by the second silicon waveguide by the optical signal processing unit treated optical signal, is coupled into
Enter the Si of the second hybrid integrated waveguide3N4Waveguide passes through the Si of the second hybrid integrated waveguide3N4Waveguide is coupled into
Output optical fibre simultaneously exports.
Second aspect, the embodiment of the present invention provide a kind of optical device, including first aspect of the embodiment of the present invention and its any
Hybrid integrated silicon optical chip described in alternative embodiment.
The third aspect, the embodiment of the present invention provide chip manufacture method, for make first aspect of the embodiment of the present invention and
Hybrid integrated silicon optical chip described in its any alternative embodiment, comprising:
In SOI wafer, by silicon waveguide photoetching, etching and ion implanting, optical signal processing unit is formed；
The first hybrid integrated wave is formed on the silicon substrate by Material growth, ion implanting, photoetching and etching technics
It leads and the second hybrid integrated waveguide；
Semiconductor laser chip is mounted on the surface of silicon by way of hybrid integrated upside-down mounting, and with it is described
First hybrid integrated waveguide alignment；
Form silica covering on the silicon substrate by PECVD.
A kind of hybrid integrated silicon optical chip, optical device and chip manufacture method provided in an embodiment of the present invention.The mixing
Integrated silicon optical chip integrates two hybrid integrated waveguides on same silicon substrate, and one for receiving input optical signal, a use
In output optical signal, optical signal processing unit is set between input and output, two hybrid integrated waves are connected by silicon waveguide
It leads, wherein hybrid integrated waveguide is by one or more Si3N4Waveguide composition, utilizes Si3N4Waveguide carries out the input of optical signal and defeated
It couples out, coupling efficiency and coupling tolerance can be promoted.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is this hair
Bright some embodiments for those of ordinary skill in the art without creative efforts, can be with root
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is a kind of hybrid integrated silicon optical chip composition schematic diagram of the embodiment of the present invention；
Fig. 2 (a) is the coupled structure schematic top plan view at the first hybrid integrated waveguide of embodiment of the present invention end；
Fig. 2 (b) is the coupled structure schematic side view at the first hybrid integrated waveguide of embodiment of the present invention end；
Fig. 3 is the coupled structure schematic side view at the second hybrid integrated waveguide of embodiment of the present invention end；
Fig. 4 is the structural schematic diagram at hybrid integrated of embodiment of the present invention waveguide end；
Fig. 5 is the coupling efficiency schematic diagram at the first hybrid integrated waveguide end of the embodiment of the present invention and active laser device chip；
Fig. 6 is the coupling tolerance schematic diagram at the first hybrid integrated waveguide end of the embodiment of the present invention and active laser device chip；
Fig. 7 is the coupling efficiency schematic diagram at the second hybrid integrated waveguide end of the embodiment of the present invention and output optical fibre；
Fig. 8 is chip manufacture method of embodiment of the present invention flow diagram.
Description of symbols
100, silicon substrate, 101, semiconductor laser chip,
102, the first hybrid integrated waveguide, the 103, first silicon waveguide,
104, optical signal processing unit, the 105, second silicon waveguide,
106, the second hybrid integrated waveguide, 107, silica covering,
108、Si3N4Waveguide, 200, chip of laser fixed platform,
201, solder joint, 202, metal electrode,
203, Stopper structure, 204, alignment mark.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical solution in the embodiment of the present invention is explicitly described, it is clear that described embodiment is the present invention
A part of the embodiment, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art are not having
Every other embodiment obtained under the premise of creative work is made, shall fall within the protection scope of the present invention.
Fig. 1 is a kind of hybrid integrated silicon optical chip schematic diagram of the embodiment of the present invention, hybrid integrated silicon light core as shown in Figure 1
Piece, comprising:
Silicon substrate 100；
Silica covering 107 on the silicon substrate 100；
It is integrated in the semiconductor laser chip in the silica covering and being located on the silicon substrate 100 respectively
101, the first hybrid integrated waveguide 102, optical signal processing unit 104 and the second hybrid integrated waveguide 106；
The optical signal processing unit 104 connects the first hybrid integrated waveguide 102 by the first silicon waveguide 103, leads to
It crosses the second silicon waveguide 105 and connects the second hybrid integrated waveguide 106, for being modulated/demodulation splitting/composing to optical signal
Wave processing；
The first hybrid integrated waveguide 102 includes one or more Si for semiconductor laser chip coupling3N4Wave
108 are led, the second hybrid integrated waveguide 106 includes one or more Si for being used for Single-Mode Fiber Coupling3N4Waveguide 108；
Referring to FIG. 1, the hybrid integrated silicon optical chip of the embodiment of the present invention, the hybrid integrated wave including two port directions
It leads, i.e. the first hybrid integrated waveguide 102 and the second hybrid integrated waveguide 106, one of them is as input waveguide, and one as defeated
Waveguide out, specifically, the first hybrid integrated waveguide 102 are input waveguide, and the second hybrid integrated waveguide 106 is output waveguide.Each
Hybrid integrated waveguide is by one or more Si3N4Waveguide 108 forms, i.e., according to the actual needs, hybrid integrated waveguide can be
One Si3N4Waveguide 108 is also possible to by multiple Si3N4The Si that waveguide 108 forms3N4Waveguide array, Si3N4Waveguide 108 is used for
Optical signal is coupled into or is coupled out silicon waveguide, optical signal is coupled into output optical fibre etc., to realize the defeated of optical signal
Enter and output coupling.
Wherein optical signal processing unit 104 is used to be modulated optical signal/demodulation wave splitting/composing processing, can be with
The processing such as be delayed to optical signal, amplified, being monitored, and structure can be modulator/demodulator, and Wave division multiplexer/demultiplexer prolongs
Slow device etc..
Wherein the signal input side of the first hybrid integrated waveguide 102 is arranged in semiconductor laser chip 101, is used for
Generate the optical signal of output wavelength.
The working principle of the hybrid integrated silicon optical chip of the embodiment of the present invention are as follows:
The semiconductor laser chip output optical signal is coupled into the Si of the first hybrid integrated waveguide3N4Wave
It leads, passes through the Si of the first hybrid integrated waveguide3N4Waveguide is coupled into the first silicon waveguide, and is transmitted to the light letter
Number processing unit is transmitted by the second silicon waveguide by the optical signal processing unit treated optical signal, is coupled into
Enter the Si of the second hybrid integrated waveguide3N4Waveguide passes through the Si of the second hybrid integrated waveguide3N4Waveguide is coupled into
Output optical fibre simultaneously exports.
The hybrid integrated silicon optical chip of the embodiment of the present invention, integrated two hybrid integrated waveguides on same silicon substrate, one
A for receiving input optical signal, one is used for output optical signal, and optical signal processing unit is arranged between input and output, leads to
It crosses silicon waveguide and connects two hybrid integrated waveguides, wherein hybrid integrated waveguide is by one or more Si3N4Waveguide composition, utilizes
Si3N4Waveguide progress optical signal outputs and inputs coupling, can promote coupling efficiency and coupling tolerance.
Based on the above embodiment, the Si of the waveguide 102 of the first hybrid integrated and the second hybrid integrated waveguide 1063N4Waveguide
Number it is identical, physical structure having the same；
If the first hybrid integrated waveguide 102 and the second hybrid integrated waveguide 106 include multiple Si3N4Waveguide, then it is described
Multiple Si3N4Waveguide is arranged in vertical direction, to expand optical signal in the mould field of vertical direction；
The Si of the first hybrid integrated waveguide 1023N4Waveguide is Chong Die with the first silicon waveguide portion, and lap
Si3N4Waveguide is gradually reduced along the width of optical path direction, the first silicon waveguide portion of lap along optical path direction width by
It is cumulative big；
The Si of the second hybrid integrated waveguide 1063N4Waveguide is Chong Die with the second silicon waveguide portion, and lap
Si3N4Waveguide is gradually increased along the width of optical path direction, the second silicon waveguide portion of lap along optical path direction width by
Gradual change is small.
In the embodiment of the present invention, in order to guarantee the terseness and consistency of technique, two hybrid integrated waveguides, i.e., first is mixed
Close integrated waveguide 102 and the second hybrid integrated waveguide 106, physical structure having the same, it includes Si3N4The number of waveguide
Identical, even the first hybrid integrated waveguide 102 includes a Si3N4Waveguide, then the second hybrid integrated waveguide 102 also includes one
Si3N4Waveguide；If the first hybrid integrated waveguide 102 includes N number of Si3N4Waveguide, then the second hybrid integrated waveguide 102 is also comprising N number of
Si3N4Waveguide.
Specifically, when hybrid integrated waveguide includes multiple Si3N4Waveguide, then the multiple Si3N4Waveguide is arranged in vertical direction
Column, to expand optical signal in the mould field of vertical direction.
Based on the above embodiment, the first hybrid integrated waveguide and the second hybrid integrated waveguide have identical or different
Physical size, specific physical size meet mould field matching and require.
Specifically, the mould field of the mould field of the first hybrid integrated waveguide 102 and the semiconductor laser chip 101
Match；The mould field of the second hybrid integrated waveguide 106 is matched with the mould field of output optical fibre；Specifically, the first hybrid integrated waveguide
102 Si3N4Waveguide is matched by way of vertical arrangement with the mould field of the semiconductor laser chip；Described second is mixed
Close the Si of integrated waveguide3N4Waveguide is matched by way of vertical arrangement with the mould field of output optical fibre.
Fig. 2 (a) is the coupled structure schematic top plan view at the first hybrid integrated waveguide of embodiment of the present invention end, and Fig. 2 (b) is this
The coupled structure schematic side view at inventive embodiments the first hybrid integrated waveguide end, please refers to Fig. 2 (a) and Fig. 2 (b), and described
The Si of one hybrid integrated waveguide 1023N4Waveguide partly overlaps with the first silicon waveguide 103, i.e., the embodiment of the present invention first mixes
Integrated waveguide 102 is in addition to integrating Si3N4Outside waveguide, it is also integrated with part the first silicon waveguide (please referring to Fig. 2 (b)), the part
One silicon waveguide is for the Si with the first hybrid integrated waveguide 1023N4Waveguide carries out optical signal coupling, by Si3N4The light of waveguide coupling
Signal is coupled into the first silicon waveguide and is transmitted, therefore the part the first silicon waveguide is the first hybrid integrated waveguide 102
Input silicon waveguide.As shown in Fig. 2 (b), it is also contemplated that the first hybrid integrated waveguide 102 of the embodiment of the present invention includes one
Or multiple Si3N4Waveguide, and input silicon waveguide (input silicon waveguide i.e. a part of the first silicon waveguide).
(b) top view in Fig. 2 (b) and Fig. 4 is please referred to, the Si of lap in 102 end of the first hybrid integrated waveguide3N4Wave
The width led along optical path direction is gradually reduced, and the first silicon waveguide portion of lap is gradually increased along the width of optical path direction,
In Si3N4The straightened portion direction of waveguide and input silicon waveguide overlapping couples, Si of the optical signal from upper layer3N4Waveguide coupling
Into the input silicon waveguide of lower layer, realizes semiconductor laser and input the high efficiency coupling of silicon waveguide.
Fig. 2 (a) and Fig. 2 (b) are please referred to, hybrid integrated silicon optical chip described in the embodiment of the present invention, in the first hybrid integrated
The signal input side of waveguide 102 is provided with chip of laser fixed platform 200.The chip of laser fixed platform 200 passes through
Semiconductor etching process is formed, and precision is high, and suitable for the face-down bonding of chip of laser, the also Stopper being formed simultaneously is tied
Structure 203 is provided with pad i.e. metal electrode for limiting the height and position of laser patch in chip of laser fixed platform
202 and alignment mark 204, the pad is used to and chip of laser pad forms the completion of solder joint 201 and is welded and fixed, the alignment
Label 204 is used to find chip of laser for automatic placement machine and fixed platform optimized patch position provides reference point.
Fig. 3 is the coupled structure schematic side view at the second hybrid integrated waveguide of embodiment of the present invention end；Referring to FIG. 3, institute
State the Si of the second hybrid integrated waveguide 1063N4Waveguide partly overlaps with the second silicon waveguide 105, it is also contemplated that the present invention is real
The second hybrid integrated of example waveguide 106 is applied in addition to integrating Si3N4Outside waveguide, it is also integrated with part the second silicon waveguide (please referring to Fig. 3),
Part the second silicon waveguide is for the Si with the second hybrid integrated waveguide 1063N4Waveguide carries out optical signal coupling, by the second silicon
The optical signal transmitted in waveguide is coupled into the Si of the second hybrid integrated waveguide 1063N4Waveguide, then pass through the second hybrid integrated wave
Lead 106 Si3N4Waveguide is coupled to output optical fibre, therefore the part the second silicon waveguide is the second hybrid integrated waveguide 106
Output silicon waveguide.In other words, the second hybrid integrated waveguide 106 of the embodiment of the present invention includes one or more Si3N4Waveguide,
And output silicon waveguide (output silicon waveguide i.e. a part of the second silicon waveguide).
(b) top view in 3 and Fig. 4 is please referred to, the Si of lap in the second hybrid integrated waveguide 1063N4Waveguide is along optical path
The width in direction is gradually increased, and the second silicon waveguide portion of lap gradually becomes smaller along the width of optical path direction, in Si3N4Wave
The straightened portion direction for leading and inputting silicon waveguide overlapping couples, and optical signal is coupled to upper layer from the output silicon waveguide of lower layer
Si3N4Waveguide further passes through the Si on upper layer3N4Waveguide is coupled to output optical fibre, to realize half efficient light output coupling
It closes.
To sum up, since silicon waveguide index is big, it is emitted mould field very little, it is larger with Direct couple loss, with laser
Device direct-coupling tolerance is smaller；And Si3N4The refractive index of material is smaller than silicon refractive index, has auxiliary well to silicon waveguide coupling
Effect, thus the embodiment of the present invention passes through the Si of vertical arrangement3N4Waveguide stepped construction carrys out auxiliary silicon Waveguide input/output terminal
Mouth coupling promotes coupling efficiency and coupling tolerance.
Fig. 4 is the structural schematic diagram at hybrid integrated of embodiment of the present invention waveguide end, is top view at (a), (b) is side view
Figure (c) is sectional view.Multiple Si are illustrated by (a) top view3N4The stepped construction of waveguide vertical arrangement；Pass through (b) side view
Figure illustrates silicon waveguide and Si3N4Waveguide is gradually decreased as taper at coupling, and silicon waveguide is by rectangle body portion and tapering body portion
It constitutes, bullet is to Si3N4Wave guide direction extends, and bullet top is located at Si3N4Below waveguide.The Si3N4Waveguide is tapered
Body, extending direction and the silicon waveguide extending direction are opposite；Si is illustrated by (c) sectional view3N4The section of waveguide, section
Face has certain width and height.
Based on the above embodiment, multiple Si of the first hybrid integrated waveguide3N4The structure size of waveguide is identical or not
It is identical；
Multiple Si of the second hybrid integrated waveguide3N4The structure size of waveguide is identical or not identical.
Based on the above embodiment, the present invention also provides a kind of preferred embodiment, the first hybrid integrated waveguide includes three
A Si3N4Waveguide, respectively the first Si3N4Waveguide, the 2nd Si3N4Waveguide and the 3rd Si3N4Waveguide；Second hybrid integrated waveguide packet
Include three Si3N4Waveguide, respectively the 4th Si3N4Waveguide, the 5th Si3N4Waveguide and the 6th Si3N4Waveguide；The semiconductor laser
The active layer of device chip and the 2nd Si3N4The center of waveguide is aligned.
In order to illustrate the Si of the embodiment of the present invention3N4The structure size of waveguide, in conjunction with a kind of preferred reality of the embodiment of the present invention
It applies example and two hybrid integrated waveguides separately includes three Si3N4Waveguide, to illustrate specific size.In Fig. 4 (a), (b),
(c), right since the first hybrid integrated waveguide of the embodiment of the present invention and the structure of the first hybrid integrated waveguide are identical and symmetrical
In the first hybrid integrated waveguide and the first hybrid integrated waveguide:
The height h=of silicon Waveguide Rectangular body (i.e. not the first silicon waveguide or the second silicon waveguide of lap) part
0.22um, width Wout=0.5um, length Ls=50um；
The height h=0.22um of silicon waveguide taper (i.e. the first silicon waveguide or the second silicon waveguide of lap) part,
Cone point width Wtip=0.1um, length Lt=550um；
Silicon waveguide and the first Si3N4Waveguide, the 2nd Si3N4Waveguide and the 3rd Si3N4Waveguide coupling unit length Lc=
450um；
First Si3N4Waveguide, the 2nd Si3N4Waveguide and the 3rd Si3N4The height of waveguide is Hsi3n4=0.1um, and first
Si3N4Waveguide and the 2nd Si3N4Waveguide and the 2nd Si3N4Waveguide and the 3rd Si3N4Between center spacing gap1=0.54um,
Silicon waveguide and the first Si3N4Center spacing gap2=0.48um between waveguide, cone point width Wmid=0.5um, for
First hybrid integrated waveguide 102 of semiconductor laser coupling, correspondence tapered distal end width are Win=2.5um, for and it is single
Second hybrid integrated waveguide 106 of mode fiber coupling, correspondence tapered distal end width are Win=10um.
In the preferred embodiment of the present invention, the first hybrid integrated waveguide 102 includes input silicon waveguide, the first Si3N4Waveguide, the
Two Si3N4Waveguide, the 3rd Si3N4Waveguide and silica covering, the second hybrid integrated waveguide 106 include exporting silicon waveguide, and the 4th
Si3N4Waveguide, the 5th Si3N4Waveguide, the 6th Si3N4 waveguide and silica covering, the embodiment of the present invention comprehensively consider coupling effect
Rate and registration tolerance and silicon optical chip process complexity, in embodiment select technological feasibility it is good, while coupling efficiency and
Alignment tolerance is also able to satisfy the design of requirement, i.e. three layers of Si3N4The function of auxiliary silicon waveguide coupling is realized in waveguide, in practical application
In can according to coupling demand and technology difficulty to Si3N4The number of plies and dimensional parameters carry out re-optimization selection, different sizes
It needs to Si3N4Waveguide dimensions carry out re-optimization.
Due to the chip of laser with mould field transformational structure, the angle of divergence is small, and mould field is larger, and coupling is easy, but semiconductor core
Blade technolgy is complicated, and only a small number of semiconductor laser chips producer can process.The laser model selected in the embodiment of the present invention
For most typical laser parameter, selected center's wavelength is 1550nm, the Gaussian single mode semiconductor that far-field divergence angle is 25 ° x40 °
Laser makees simulation test model.
Fig. 5 is the coupling efficiency schematic diagram at the first hybrid integrated waveguide end of the embodiment of the present invention and active laser device chip；
Fig. 6 is the coupling tolerance schematic diagram at the first hybrid integrated waveguide end of the embodiment of the present invention and active laser device chip；Fig. 7 is this hair
The coupling efficiency schematic diagram at bright embodiment the second hybrid integrated waveguide end and output optical fibre.By simulation test, the present invention is implemented
The example hybrid integrated silicon optical chip, the first hybrid integrated waveguide and semiconductor laser chip coupling efficiency can achieve
73.5%, C-band coupling loss is respectively less than 1.5dB, shown in Fig. 5；3dB alignment tolerance, shown in Fig. 6；Distinguish in the x, y direction
Are as follows: 1um and 1.5um；Hybrid integrated waveguide 2 and Single-Mode Fiber Coupling efficiency are 55%, and C-band coupling loss is less than 2.6dB,
As shown in Figure 7.
The patch precision of automatic upside-down mounting chip mounter commercial at present can achieve +/- 0.5um, and the result of the embodiment of the present invention can
In such a way that satisfaction is used and is mounted automatically by active laser device chip attachment in the chip of laser fixed platform of silicon optical chip,
Passive alignment and direct-coupling of the laser to silicon waveguide are completed, and the application of automation equipment can greatly guarantee technique one
Cause property shortens the time to light and welding, thus achieve the purpose that reduce cost, it is suitable for mass production.
In conclusion hybrid integrated silicon optical chip of the embodiment of the present invention, integrates two hybrid integrateds on same silicon substrate
Waveguide, one for receiving input optical signal, one is used for output optical signal, and optical signal prosessing is arranged between input and output
Unit connects two hybrid integrated waveguides by silicon waveguide, and wherein hybrid integrated waveguide is by one or more Si3N4Waveguide composition,
Utilize Si3N4Waveguide carries out the coupling that outputs and inputs of optical signal, and coupling efficiency is high, greatly coupling tolerance, high reliability, and energy
Realize rapid batch production.
The embodiment of the present invention also provides a kind of optical device, including mixing described in any of the above-described embodiment of the embodiment of the present invention
Integrated silicon optical chip.
It should be noted that any include hybrid integrated silicon optical chip described in any of the above-described embodiment of the embodiment of the present invention
Photoelectric device belong to the protection scope of the embodiment of the present invention.
Fig. 8 is chip manufacture method of embodiment of the present invention flow diagram, referring to FIG. 8, the embodiment of the present invention provides one
Kind makes the chip manufacture method of above-mentioned hybrid integrated silicon optical chip, comprising:
800, in SOI wafer, by silicon waveguide photoetching, etching and ion implanting, form optical signal processing unit；
801, the first mixing collection is formed by Material growth, ion implanting, photoetching and etching technics on the silicon substrate
At waveguide and the second hybrid integrated waveguide；
802, semiconductor laser chip is mounted on the surface of silicon by way of hybrid integrated upside-down mounting, and with
The first hybrid integrated waveguide alignment；
803, silica packet is formed by plasma enhanced chemical vapor deposition method PECVD on the silicon substrate
Layer.
The embodiment of the present invention realizes optical signal processing unit by step 800, realizes the first hybrid integrated by step 801
Waveguide and the second hybrid integrated waveguide are realized the attachment of semiconductor laser chip by step 802, are realized by step 803
Silica encapsulation, rank etching and rear process after finally carrying out, to realize, coupling efficiency is high, couples tolerance, height greatly
The hybrid integrated silicon optical chip of reliability, the hybrid integrated silicon optical chip are able to achieve rapid batch production.
Based on the above embodiment, step 801, it is described by Material growth, ion implanting, photoetching and etching technics described
The first hybrid integrated waveguide and the second hybrid integrated waveguide are formed on silicon substrate, are specifically included:
According to the Si in the first hybrid integrated waveguide and the second hybrid integrated waveguide3N4Number of waveguides exists by the following method
Vertical direction successively makes each layer of Si3N4Ducting layer:
801.1, through plasma enhanced chemical vapor deposition method PECVD in the SOI wafer or Si3N4Waveguide
Layer deposition film layer；
801.2, Si is formed in the film layer by low-pressure chemical vapour deposition technique LPCVD method3N4Ducting layer, and
Lithography and etching is carried out according to demand.Herein, described to carry out lithography and etching according to demand, refer to Si3N4The specific ruler of ducting layer
It is very little according to coupling demand and technology difficulty to Si3N4The number of plies and dimensional parameters be in optimized selection, different size needs pair
Si3N4Waveguide dimensions optimize.
Since the hybrid integrated silicon optical chip of the embodiment of the present invention includes one or more Si3N4Waveguide passes through step
801.1 and 801.2, one layer of Si can be made3N4Ducting layer, each layer of Si3N4Ducting layer is a Si3N4Waveguide, it is repeatedly heavy
Multiple step 801.1 and 801.2 can be obtained multiple Si3N4Waveguide.
In conclusion chip manufacture method provided in an embodiment of the present invention, can make and mix described in the embodiment of the present invention
Close integrated silicon optical chip, two hybrid integrated waveguides integrated on same silicon substrate, one for receiving input optical signal, one
For output optical signal, optical signal processing unit is set between input and output, two hybrid integrateds are connected by silicon waveguide
Waveguide, wherein hybrid integrated waveguide is by one or more Si3N4Waveguide composition, utilizes Si3N4Waveguide carry out optical signal input and
Output coupling, coupling efficiency is high, greatly coupling tolerance, high reliability, and is able to achieve rapid batch production.
Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although
Present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: it still may be used
To modify the technical solutions described in the foregoing embodiments or equivalent replacement of some of the technical features；
And these are modified or replaceed, technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution spirit and
Range.
Claims (8)
1. a kind of hybrid integrated silicon optical chip characterized by comprising
Silicon substrate；
Silica covering on the silicon substrate；
It is integrated in the semiconductor laser chip in the silica covering and being located on the silicon substrate, the first mixing respectively
Integrated waveguide, optical signal processing unit and the second hybrid integrated waveguide；
The optical signal processing unit connects the first hybrid integrated waveguide by the first silicon waveguide, is connected by the second silicon waveguide
The second hybrid integrated waveguide is connect, for being modulated/demodulation wave splitting/composing processing to optical signal；
The first hybrid integrated waveguide includes one or more Si for semiconductor laser chip coupling3N4Waveguide, it is described
Second hybrid integrated waveguide includes one or more Si for being used for Single-Mode Fiber Coupling3N4Waveguide；
The semiconductor laser chip output optical signal is coupled into the Si of the first hybrid integrated waveguide3N4Waveguide is led to
Cross the Si of the first hybrid integrated waveguide3N4Waveguide is coupled into the first silicon waveguide, and is transmitted to the optical signal prosessing
Unit is transmitted by the second silicon waveguide by the optical signal processing unit treated optical signal, is coupled into described
The Si of second hybrid integrated waveguide3N4Waveguide passes through the Si of the second hybrid integrated waveguide3N4Waveguide is coupled into output light
Fibre simultaneously exports.
2. hybrid integrated silicon optical chip according to claim 1, which is characterized in that the first hybrid integrated waveguide and
The Si of two hybrid integrated waveguides3N4The number of waveguide is identical, physical structure having the same；
If the first hybrid integrated waveguide and the second hybrid integrated waveguide include multiple Si3N4Waveguide, then the multiple Si3N4Wave
It leads and is arranged in vertical direction, to expand optical signal in the mould field of vertical direction；
The Si of the first hybrid integrated waveguide3N4Waveguide is Chong Die with the first silicon waveguide portion, and the Si of lap3N4Wave
The width led along optical path direction is gradually reduced, and the first silicon waveguide portion of lap is gradually increased along the width of optical path direction；
The Si of the second hybrid integrated waveguide3N4Waveguide is Chong Die with the second silicon waveguide portion, and the Si of lap3N4Wave
The width led along optical path direction is gradually increased, and the second silicon waveguide portion of lap gradually becomes smaller along the width of optical path direction.
3. hybrid integrated silicon optical chip according to claim 1 or 2, which is characterized in that the first hybrid integrated waveguide
There is identical or different physical size with the second hybrid integrated waveguide；
The mould field of the first hybrid integrated waveguide is matched with the mould field of the semiconductor laser chip；The second mixing collection
It is matched at the mould field of waveguide with the mould field of output optical fibre.
4. hybrid integrated silicon optical chip according to claim 1 or 2, which is characterized in that the first hybrid integrated waveguide
Multiple Si3N4The structure size of waveguide is identical or not identical；
Multiple Si of the second hybrid integrated waveguide3N4The structure size of waveguide is identical or not identical.
5. hybrid integrated silicon optical chip according to claim 1 or 2, which is characterized in that the first hybrid integrated waveguide
Including three Si3N4Waveguide, respectively the first Si3N4Waveguide, the 2nd Si3N4Waveguide and the 3rd Si3N4Waveguide；Second hybrid integrated
Waveguide includes three Si3N4Waveguide, respectively the 4th Si3N4Waveguide, the 5th Si3N4Waveguide and the 6th Si3N4Waveguide；
The active layer of the semiconductor laser chip and the 2nd Si3N4The center of waveguide is aligned.
6. a kind of optical device, which is characterized in that including the described in any item hybrid integrated silicon optical chips of claim 1-5.
7. the chip manufacture method of any one of the claim 1-5 hybrid integrated silicon optical chip characterized by comprising
In SOI wafer, by silicon waveguide photoetching, etching and ion implanting, optical signal processing unit is formed；
The first hybrid integrated waveguide and the second mixing collection are formed on the silicon substrate by Material growth, photoetching and etching technics
At waveguide；
Semiconductor laser chip is mounted on the surface of silicon by way of hybrid integrated upside-down mounting, and with described first
Hybrid integrated waveguide alignment；
Form silica covering on the silicon substrate by PECVD.
8. production method according to claim 7, which is characterized in that it is described by Material growth, ion implanting, photoetching and
Etching technics forms the first hybrid integrated waveguide and the second hybrid integrated waveguide on the silicon substrate, specifically includes:
According to the Si in the first hybrid integrated waveguide and the second hybrid integrated waveguide3N4Number of waveguides, by the following method vertical
Direction successively makes each layer of Si3N4Ducting layer:
Through PECVD in the SOI wafer or Si3N4Ducting layer deposits SiO2Film layer；
Si is formed in the film layer by LPCVD method3N4Ducting layer, and lithography and etching is carried out according to demand.
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