CN208060764U - The encapsulating structure of silicon substrate chip of light waveguide and vertical cavity surface emitting laser - Google Patents
The encapsulating structure of silicon substrate chip of light waveguide and vertical cavity surface emitting laser Download PDFInfo
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- CN208060764U CN208060764U CN201820186933.8U CN201820186933U CN208060764U CN 208060764 U CN208060764 U CN 208060764U CN 201820186933 U CN201820186933 U CN 201820186933U CN 208060764 U CN208060764 U CN 208060764U
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Abstract
The utility model discloses a kind of encapsulating structures of silicon substrate chip of light waveguide and vertical cavity surface emitting laser, make silicon waveguiding structure on silicon chip on insulator and have oblique raster coupler；Layer of silicon dioxide insulating layer is deposited on chip again, makes plain conductor figure and golden soldering dot pattern successively on the insulating layer later.The relative position needs of plain conductor figure and golden soldering dot pattern and grating coupler accurately control.Finally by the way of face-down bonding, vertical cavity surface emitting laser and silicon-based grating coupler are subjected to alignment package.The structure can effectively realize the coupling of laser and silicon substrate optical waveguide, realize silicon substrate light source.Oblique raster coupler can effectively reduce the second-order reflection of traditional raster coupler, improve coupling efficiency, and have larger operation wavelength bandwidth.The structure greatly reduces the making encapsulation difficulty of silicon substrate light source, can be widely applied in the optical module based on silicon-based photonics integration chip.
Description
Technical field
The utility model is related to integrated opto-electronic device technical field, the structure and laser coupling of special silicon substrate optical chip
Encapsulating structure and related production are closed, there is the foreground for being widely used in optical communications industry.
Background technology
With the arrival of big data and cloud computing era, data communication needs constantly increase, and extensive demand one kind is highly integrated
Fast, the inexpensive photoelectricity system of degree, processing speed.Silicon photon technology CMOS technique compatible, can superchip it is integrated, it is highly reliable
Mass production, low cost manufacturing, while having many advantages, such as ultra high bandwidth, ultrafast transmission rate.With silicon-on-insulator material
Manufactured silicon optical waveguide, great refractive index difference can be such that light is preferably limited in waveguide core layer between sandwich layer and covering, greatly
The big loss for reducing optical signal on insulator in silicon-based optical waveguide device.Meanwhile the silicon optical waveguide has smaller bending
Radius is conducive to the efficient integrated of photonic device, has more wide application prospect.But simultaneously as silicon materials itself
Limitation, silicon substrate light source still make difficulty.The utility model provides a kind of by silicon substrate optical chip and vertical cavity surface-emitting laser
The structure of device coupling package realizes silicon substrate light source to realize the efficient optical coupling of the two.
Vertical cavity surface emitting laser is a kind of micro semiconductor laser device, and light direction is vertical with substrate surface, tool
Have that good pattern, low lock value electric current, modulation rate be high, the lot of advantages such as cheap, is very suitable for applying and is passed in high-speed parallel optical
The communications fields such as defeated and parallel optical interconnecting.Compared with traditional edge-emitting laser, surface launching characteristic is also convenient for and plane wave
Guide structure carries out surface fitting encapsulation.
Vertical cavity surface emitting laser is coupled with slab guide, needs light turn 90 degrees partially into plane light wave
It leads.The mode that grating usually can be used realizes this purpose.But due to the presence of secondary reflection, common grating coupler can not incite somebody to action
Optically coupling to complete vertical direction in slab guide, it usually needs there is 10 ° or so of drift angle.Therefore it cannot achieve and vertical cavity surface
The coupling of emitting laser.We propose a kind of silicon substrate grating based on inclined waveguide structure in CN201520845532.5
Coupler, it can be achieved that with complete vertical direction place optical fiber coupling.The structure can also be applied to silicon waveguide and vertical cavity
The coupling of surface-emitting laser.
The integrated eutectic gold tin solder that mostly uses of active electro-optic device and silicon chip is as solder joint.It is with excellent machinery
With heat-conductive characteristic (especially intensity and creep resistance) and be not required to the characteristic that group solder flux can be very good to flow again, in welding again
Stream process can generate repetition, without cavity and flawless welding.
The utility model is made using silicon-on-insulator material and tilts Waveguide grating coupler in this context, then in silicon core
On piece designs plain conductor and solder joint, and by way of flip chip bonding, allows vertical cavity surface emitting laser can be with silicon based photon core
Piece carries out vertical coupled encapsulation, so that alignment is become simple, coupling efficiency is improved, and substantially reduces encapsulation difficulty.
Utility model content
1, the utility model aim
The utility model overcomes the deficiencies of existing technologies and deficiency, in conjunction with a kind of grating coupler, and is made on chip
Plain conductor and solder joint so that vertical cavity surface emitting laser can carry out coupling package with silicon substrate integrated optic component.This programme
Coupled modes are simple, are easy to be aligned, while can reduce second-order reflection, improve coupling efficiency, and have larger operating wavelength band
Width can be widely applied in the optical module based on silicon-based photonics integration chip.
2. technical solution used by the utility model
The utility model proposes a kind of silicon photon chip based on silicon-on-insulator substrate, including silicon substrate, oxygen buried layer, tops
Silicon layer, silicon dioxide insulating layer, plain conductor, solder joint and vertical cavity surface emitting laser；
From bottom to up successively arrange substrate, oxygen buried layer, push up silicon layer, silicon dioxide insulating layer；There is silicon wave on the top silicon layer
It leads, be based on oblique raster coupler, the oxygen buried layer near the oblique raster coupler is hollowed out, therefore the one of grating coupler
End is contacted with the silicon substrate 1, forms incline structure；There are the plain conductor, the gold on the silicon dioxide insulating layer
Belonging on conducting wire has the solder joint.
The angle of further specific implementation mode, the incline structure and horizontal direction is between 4 ° -15 °.
Further specific implementation mode, the Si-Substrate Thickness are 50-1000um；The oxygen buried layer thickness is 500-
4000nm；The top silicon layer thickness is 70-500nm.
Further specific implementation mode, the oblique raster coupler width are 7-14um, the mould with laser beam
Spot size is suitable.
Further specific implementation mode, the plain conductor are made of low resistivity metals such as gold, aluminium, and thickness exists
Between 20-5000nm.
Further specific implementation mode, the solder joint are made of gold-tin alloy, and thickness is between 500-50000nm.
The utility model proposes the encapsulating structures of a kind of silicon-based grating coupler and vertical cavity surface emitting laser, including institute
A kind of the silicon photon chip and vertical cavity surface emitting laser based on silicon-on-insulator substrate stated, the vertical-cavity surface-emitting swash
Light device, includes semiconductor substrate, and both ends are equipped with anode metal and cathodic metal, unthreaded hole, institute are equipped among semiconductor substrate
State the oblique raster central part of oblique raster coupler described in laser unthreaded hole face.
By flip chip bonder by the central part of the unthreaded hole aligning coupler oblique raster of vertical cavity surface emitting laser,
Have on laser metal one down, correspond to and be in contact with the golden tin welding spot on chip.When then carrying out losing money instead of making money encapsulation, choosing
It selects temperature appropriate to heat chip and laser, golden tin welding spot is made to melt, to weld together laser and chip.
3. the utility model effect
The utility model makes vertical cavity surface emitting laser be coupled in the vertical direction of silicon-based grating coupler, carries
High coupling efficiency of the laser to waveguide, reduces the loss during light propagation.The application of perpendicular coupling structure and simple
Cabling solder joint design and produce, substantially reduce encapsulation difficulty, easily facilitate integrated.
Description of the drawings
Fig. 1 is the structural schematic diagram of silicon photon chip in the utility model.
Fig. 2 is the partial structurtes vertical view of the silicon-based grating coupler of the utility model embodiment application.
Fig. 3 is the structural schematic diagram of the vertical cavity surface emitting laser of the utility model embodiment application.
Fig. 4 is the final structure figure of the utility model embodiment.
Fig. 5 is the cross-sectional view of the structure after the utility model embodiment is powered to laser.
Wherein：1-silicon substrate, 2-oxygen buried layers, 3-top layer silicons, 3a-silicon waveguide, 3b-be based on oblique raster coupler,
4-silicon dioxide insulating layers, 5-plain conductors, 6-solder joints, 7-vertical cavity surface emitting lasers, 8-semiconductor substrates, 9-
Anode metal, 10-cathodic metals, 11-unthreaded holes, 12-laser.
Specific implementation mode
To further illustrate the content and feature of the utility model, the utility model is made furtherly below in conjunction with the accompanying drawings
It is bright.Based on the embodiments of the present invention, those of ordinary skill in the art are obtained without making creative work
The every other embodiment obtained, shall fall within the protection scope of the present invention.
As shown in Figure 1, the utility model proposes a kind of silicon photon chip based on silicon-on-insulator substrate, including silicon lining
Bottom 1, oxygen buried layer 2 push up silicon layer 3, silicon dioxide insulating layer 4, plain conductor 5, solder joint 6 and vertical cavity surface emitting laser 7；
From bottom to up successively arrange substrate 1, oxygen buried layer 2, push up silicon layer 3, silicon dioxide insulating layer 4；Have on the top silicon layer 3
Silicon waveguide 3a, it is hollowed out based on the oxygen buried layer 2 near oblique raster coupler 3b, the oblique raster coupler 3b, therefore light
One end of grid coupler is contacted with the silicon substrate 1, forms incline structure；There is the gold on the silicon dioxide insulating layer 4
Belong to conducting wire 5, has the solder joint 6 on the plain conductor 5.
Fig. 2 is the partial structurtes vertical view of the silicon-based grating coupler of the utility model embodiment application.In the present embodiment,
1 thickness of silicon substrate is 50-1000um, and 2 thickness of oxygen buried layer is 500-4000nm, and top 3 thickness of silicon layer is 70-500nm.Oblique raster
Coupler 3b width is 7-14um, and suitable with the mode spot-size of laser beam, the angle with horizontal direction is between 4 ° -15 °.
Plain conductor 5 is made of low resistivity metals such as gold, aluminium, and thickness is between 20-5000nm.Solder joint 6 uses gold-tin alloy system
Make, thickness is between 500-50000nm.
Fig. 3 is the 7 encapsulating structure schematic diagram of vertical cavity surface emitting laser of the utility model embodiment application, described vertical
Cavity surface emitting lasers 7, include semiconductor substrate 8, and both ends are equipped with anode metal 9 and cathodic metal 10, semiconductor substrate 8
Centre is equipped with unthreaded hole 11, the oblique raster central part of oblique raster coupler 3b described in 11 face of laser unthreaded hole.
Fig. 4 is the final structure figure of the utility model embodiment.Using flip chip bonder, by vertical cavity surface emitting laser
It is mounted on silicon photon chip, suitable temperature is selected to heat chip and laser, golden tin welding spot is made to melt, thus into
Row makes the two be combined together without cavity, flawless welding.
As shown in figure 5, after laser is powered, laser 12 is sent out from unthreaded hole, is then irradiated to silicon-on-insulator chip
On coupling grating, and it is coupled into the silicon waveguide 3a of plane.
Finally it should be noted that：Above example is only to illustrate the technical solution of the utility model, rather than its limitations；
Although the utility model is described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that：
It still can be with technical scheme described in the above embodiments is modified, or is carried out to which part technical characteristic etc.
With replacement；And these modifications or replacements, various embodiments of the utility model technology that it does not separate the essence of the corresponding technical solution
The spirit and scope of scheme.
Above-described embodiment is the preferable embodiment of the utility model, but the embodiment of the utility model is not by above-mentioned
The limitation of embodiment, under other any Spirit Essences and principle without departing from the utility model made by change, modify, replace
In generation, simplifies combination, should be equivalent substitute mode, is included within the scope of protection of the utility model.
In the description of the present invention, it should be understood that the term of indicating position or position relationship is based on attached drawing
Shown in orientation or positional relationship, be merely for convenience of describing the present invention and simplifying the description, rather than indicate or imply institute
The equipment or element of finger must have a particular orientation, with specific azimuth configuration and operation, therefore should not be understood as to this reality
With novel limitation.
In the present invention unless specifically defined or limited otherwise, term " installation ", " connected ", " connection ", " Gu
It is fixed " etc. terms shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integral；Can be
Mechanical connection can also be electrical connection；It can be directly connected, can also can be indirectly connected through an intermediary two
The interaction relationship of connection or two elements inside element.It for the ordinary skill in the art, can basis
Concrete condition understands the concrete meaning of above-mentioned term in the present invention.
It is in the description of the present invention, it should be noted that term "center", "upper", "lower", "left", "right", " perpendicular
Directly ", the orientation or positional relationship of the instructions such as "horizontal", "inner", "outside" be based on the orientation or positional relationship shown in the drawings, or
The utility model product using when the orientation or positional relationship usually put, be merely for convenience of description the utility model and letter
Change description, do not indicate or imply the indicated device or element must have a particular orientation, with specific azimuth configuration and
Operation, therefore should not be understood as limiting the present invention.In addition, term " first ", " second ", " third " etc. are only used for area
Divide description, is not understood to indicate or imply relative importance.
In addition, the terms such as term "horizontal", "vertical", " pendency " are not offered as requiring component abswolute level or pendency, and
It is that can be slightly tilted.It is not to indicate the structure if "horizontal" refers to only that its direction is more horizontal with respect to for "vertical"
It has to fully horizontally, but can be slightly tilted.
In the present invention unless specifically defined or limited otherwise, fisrt feature is on or below second feature
It may include that the first and second features are in direct contact, can also not be to be in direct contact but pass through it including the first and second features
Between other characterisation contact.Moreover, fisrt feature is on second feature, top and above include fisrt feature the
Right over two features and oblique upper, or be merely representative of fisrt feature level height and be higher than second feature.Fisrt feature is in the second spy
Under sign, lower section and fisrt feature included below are immediately below second feature and obliquely downward, or are merely representative of fisrt feature level
Height is less than second feature.
Claims (7)
1. a kind of silicon substrate chip of light waveguide, it is characterised in that：Including silicon substrate, oxygen buried layer, silicon layer is pushed up, silicon dioxide insulating layer,
Plain conductor, solder joint and vertical cavity surface emitting laser;
From bottom to up successively arrange substrate, oxygen buried layer, push up silicon layer, silicon dioxide insulating layer；There are silicon waveguide, base on the top silicon layer
Oxygen buried layer near oblique raster coupler, the oblique raster coupler is hollowed out, thus one end of grating coupler with
The silicon substrate contact, forms incline structure；There are the plain conductor, the plain conductor on the silicon dioxide insulating layer
On have the solder joint.
2. silicon substrate chip of light waveguide according to claim 1, it is characterised in that：The folder of the incline structure and horizontal direction
Angle is between 4 ° -15 °.
3. silicon substrate chip of light waveguide according to claim 1, which is characterized in that the Si-Substrate Thickness is 50-1000um；
The oxygen buried layer thickness is 500-4000nm；The top silicon layer thickness is 70-500nm.
4. silicon substrate chip of light waveguide according to claim 1, which is characterized in that the oblique raster coupler width is 7-
14um is suitable with the mode spot-size of laser beam.
5. silicon substrate chip of light waveguide according to claim 1, which is characterized in that the plain conductor is using gold, the low electricity of aluminium
Resistance rate metal makes, and thickness is between 20-5000nm.
6. silicon substrate chip of light waveguide according to claim 1, which is characterized in that the solder joint is made of gold-tin alloy,
Thickness is between 500-50000nm.
7. a kind of encapsulating structure of silicon substrate chip of light waveguide and vertical cavity surface emitting laser, which is characterized in that wanted including right
Ask a kind of the silicon photon chip and vertical cavity surface emitting laser based on silicon-on-insulator substrate described in 1, the vertical cavity surface
Emitting laser, includes semiconductor substrate, and both ends are equipped with anode metal and cathodic metal, light is equipped among semiconductor substrate
Hole, the oblique raster central part of oblique raster coupler described in the laser unthreaded hole face.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820186933.8U CN208060764U (en) | 2018-02-02 | 2018-02-02 | The encapsulating structure of silicon substrate chip of light waveguide and vertical cavity surface emitting laser |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820186933.8U CN208060764U (en) | 2018-02-02 | 2018-02-02 | The encapsulating structure of silicon substrate chip of light waveguide and vertical cavity surface emitting laser |
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| CN208060764U true CN208060764U (en) | 2018-11-06 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111474642A (en) * | 2019-09-06 | 2020-07-31 | 南通赛勒光电科技有限公司 | Coupling alignment structure and method |
| CN111694111A (en) * | 2019-03-15 | 2020-09-22 | 青岛海信宽带多媒体技术有限公司 | Optical module |
| CN111856654A (en) * | 2019-04-11 | 2020-10-30 | 联合微电子中心有限责任公司 | Coupling alignment method and device for laser chip and silicon-based optoelectronic chip |
| CN112615675A (en) * | 2020-12-14 | 2021-04-06 | 中航光电科技股份有限公司 | Parallel wireless optical module capable of emitting light perpendicular to bottom surface |
| CN112864795A (en) * | 2021-01-26 | 2021-05-28 | 北京工业大学 | Optical chip structure integrated on VCSEL coherent array and MZI array chip and preparation method thereof |
| CN117348149A (en) * | 2023-10-08 | 2024-01-05 | 广州铌奥光电子有限公司 | Thin film lithium niobate grating coupler and preparation method and device thereof |
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2018
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111694111A (en) * | 2019-03-15 | 2020-09-22 | 青岛海信宽带多媒体技术有限公司 | Optical module |
| CN111694111B (en) * | 2019-03-15 | 2022-11-11 | 青岛海信宽带多媒体技术有限公司 | Optical module |
| CN111856654A (en) * | 2019-04-11 | 2020-10-30 | 联合微电子中心有限责任公司 | Coupling alignment method and device for laser chip and silicon-based optoelectronic chip |
| CN111856654B (en) * | 2019-04-11 | 2022-11-18 | 联合微电子中心有限责任公司 | Coupling alignment method and device for laser chip and silicon-based optoelectronic chip |
| CN111474642A (en) * | 2019-09-06 | 2020-07-31 | 南通赛勒光电科技有限公司 | Coupling alignment structure and method |
| CN112615675A (en) * | 2020-12-14 | 2021-04-06 | 中航光电科技股份有限公司 | Parallel wireless optical module capable of emitting light perpendicular to bottom surface |
| CN112615675B (en) * | 2020-12-14 | 2022-07-29 | 中航光电科技股份有限公司 | Parallel wireless optical module capable of emitting light perpendicular to bottom surface |
| CN112864795A (en) * | 2021-01-26 | 2021-05-28 | 北京工业大学 | Optical chip structure integrated on VCSEL coherent array and MZI array chip and preparation method thereof |
| CN117348149A (en) * | 2023-10-08 | 2024-01-05 | 广州铌奥光电子有限公司 | Thin film lithium niobate grating coupler and preparation method and device thereof |
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