CN117348149A - Thin film lithium niobate grating coupler and preparation method and device thereof - Google Patents

Thin film lithium niobate grating coupler and preparation method and device thereof Download PDF

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Publication number
CN117348149A
CN117348149A CN202311296644.5A CN202311296644A CN117348149A CN 117348149 A CN117348149 A CN 117348149A CN 202311296644 A CN202311296644 A CN 202311296644A CN 117348149 A CN117348149 A CN 117348149A
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lithium niobate
thin film
light
film lithium
periodic grating
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CN202311296644.5A
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Chinese (zh)
Inventor
李�昊
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Guangzhou Niobao Optoelectronics Co ltd
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Guangzhou Niobao Optoelectronics Co ltd
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Priority to CN202311296644.5A priority Critical patent/CN117348149A/en
Publication of CN117348149A publication Critical patent/CN117348149A/en
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/124—Geodesic lenses or integrated gratings
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
    • G02B6/29304—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means operating by diffraction, e.g. grating
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/34—Optical coupling means utilising prism or grating
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035—Materials
    • G02B2006/1204—Lithium niobate (LiNbO3)
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12107—Grating
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12109—Filter
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133—Functions
    • G02B2006/12147—Coupler
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

The invention discloses a thin film lithium niobate grating coupler and a preparation method and a device thereof, wherein the thin film lithium niobate grating coupler comprises a substrate, an oxygen burying layer, a strip waveguide, a periodic grating structure, a cladding layer and a shading structure; the buried oxide layer is arranged on the substrate, the strip waveguide and the periodic grating structure are arranged on the buried oxide layer, the periodic grating structure is arranged in front of the strip waveguide along the light path direction and aligned with the strip waveguide, the cladding layer is arranged on the strip waveguide and the periodic grating structure, the shading structure is arranged on the cladding layer and comprises light holes, the light holes are arranged in the propagation direction of the periodic grating structure, and the size of the light holes is larger than that of the periodic grating structure. The embodiment of the invention effectively reduces the adverse effect of stray light on the signal to noise ratio of the optical detector, improves the signal to noise ratio of the optical detector, and can be widely applied to the field of integrated optics.

Description

Thin film lithium niobate grating coupler and preparation method and device thereof
Technical Field
The invention relates to the field of integrated optics, in particular to a thin film lithium niobate grating coupler and a preparation method and a device thereof.
Background
In the existing optical coupling technology of the lithium niobate photonic device, the optical coupling technology is mainly divided into grating coupling in the nearly vertical direction and end surface coupling in the horizontal direction; the horizontal end face coupling is mainly used for butt joint transmission of the photonic device chip and an external laser or optical fiber, and the vertical direction grating coupling is mainly used for detecting power of a Photodetector (PD) or vertical optical fiber coupling packaging and the like. However, the existing lithium niobate coupling devices often generate a large amount of stray light in the coupling process, so that the signal-to-noise ratio of the PD is low.
Disclosure of Invention
In view of the above, an object of the embodiments of the present invention is to provide a thin film lithium niobate grating coupler, and a method and an apparatus for manufacturing the same, so as to reduce adverse effects of stray light on a signal to noise ratio of a photodetector.
In a first aspect, an embodiment of the present invention provides a thin film lithium niobate grating coupler, including a substrate, an oxygen buried layer, a strip waveguide, a periodic grating structure, a cladding layer, and a light shielding structure; the buried oxide layer is arranged on the substrate, the strip waveguide and the periodic grating structure are arranged on the buried oxide layer, the periodic grating structure is arranged in front of the strip waveguide along the light path direction and aligned with the strip waveguide, the cladding layer is arranged on the strip waveguide and the periodic grating structure, the shading structure is arranged on the cladding layer and comprises light holes, the light holes are arranged in the propagation direction of the periodic grating structure, and the size of the light holes is larger than that of the periodic grating structure.
Optionally, the material of the periodic grating structure and the strip waveguide comprises any one of a lithium niobate material, a silicon-based material, a polymer material, or a metal material.
Alternatively, the light shielding structure and the light transmitting hole comprise a regular shape, the material of the light shielding structure comprises a metal material, and the light shielding structure may comprise a single layer or multiple layers of metal materials.
Optionally, the material of the buried oxide layer comprises an optical dielectric material comprising silicon dioxide.
Alternatively, the material of the substrate includes any one of quartz, sapphire, lithium niobate, or silicon.
In a second aspect, an embodiment of the present invention provides a method for preparing a thin film lithium niobate grating coupler, including:
pretreating a substrate;
preparing an oxygen buried layer on a substrate;
preparing a strip waveguide and a periodic grating structure on the buried oxide layer;
preparing a cladding layer on the strip waveguide and the periodic grating structure;
a light shielding structure is prepared on the cladding layer.
Optionally, preparing a strip waveguide and a periodic grating structure on the buried oxide layer, specifically including:
the structures and the sizes of the strip-shaped waveguide and the periodic grating structure are set in an auxiliary mode through a photoetching technology;
and (3) carrying out one or more times of etching on the lithium niobate material to obtain the strip waveguide and the periodic grating structure.
Optionally, preparing a light shielding structure on the cladding layer, specifically including:
the shape and the size of the shading structure are set in an auxiliary way through a photoetching technology;
plating metal material on the cladding layer by means of evaporation coating, sputtering coating or electroplating;
and preparing the light holes of the shading structure by adopting a wet stripping or dry etching mode.
In a third aspect, an embodiment of the present invention provides a thin film lithium niobate grating coupling device, including a laser, a photodetector, and the thin film lithium niobate grating coupler as described above, where a laser emitting direction of the laser faces a light path direction of a strip waveguide of the thin film lithium niobate grating coupler, and a light receiving surface of the photodetector is disposed opposite to a light hole of the thin film lithium niobate grating coupler.
Optionally, the size of the light-transmitting hole of the light shielding structure of the thin film lithium niobate grating coupler is larger than the size of the light-receiving surface of the photodetector.
The embodiment of the invention has the following beneficial effects: the shielding structure is arranged on the cladding of the thin film lithium niobate grating coupler, so that adverse effects of stray light on the signal to noise ratio of the optical detector are effectively reduced, the signal to noise ratio of the optical detector is improved, the preparation process is simple, the preparation cost is low, the thin film lithium niobate grating coupler is compatible with the chip preparation process and different chip materials, and the thin film lithium niobate grating coupler can be widely applied to actual production.
Drawings
FIG. 1 is a schematic structural diagram of a thin film lithium niobate grating coupler according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a shading structure of two thin film lithium niobate grating coupler shutters according to an embodiment of the present invention;
FIG. 3 is a schematic flow chart of a method for manufacturing a thin film lithium niobate grating coupler according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a thin film lithium niobate grating coupling device according to an embodiment of the present invention.
Reference numerals illustrate: 1. a substrate; 2. an oxygen burying layer; 3. a bar waveguide; 4. a periodic grating structure; 5. a cladding layer; 6. a light shielding structure; 7. a photodetector; 8. a light receiving surface of the light detector; 9. a laser.
Detailed Description
The invention will now be described in further detail with reference to the drawings and to specific examples. The step numbers in the following embodiments are set for convenience of illustration only, and the order between the steps is not limited in any way, and the execution order of the steps in the embodiments may be adaptively adjusted according to the understanding of those skilled in the art.
In the following description, reference is made to "some embodiments" which describe a subset of all possible embodiments, but it is to be understood that "some embodiments" can be the same subset or different subsets of all possible embodiments and can be combined with one another without conflict.
In the following description, the terms "first", "second", "third" and the like are merely used to distinguish similar objects and do not represent a specific ordering of the objects, it being understood that the "first", "second", "third" may be interchanged with a specific order or sequence, as permitted, to enable embodiments of the invention described herein to be practiced otherwise than as illustrated or described herein.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the embodiments of the invention is for the purpose of describing embodiments of the invention only and is not intended to be limiting of the invention.
Before describing embodiments of the present invention in further detail, the terms and terminology involved in the embodiments of the present invention will be described, and the terms and terminology involved in the embodiments of the present invention will be used in the following explanation.
As shown in fig. 1, an embodiment of the present invention provides a thin film lithium niobate grating coupler, which includes a substrate 1, an oxygen buried layer 2, a strip waveguide 3, a periodic grating structure 4, a cladding layer 5, and a light shielding structure 6; the buried oxide layer 2 is arranged on the substrate 1, the strip waveguide 3 and the periodic grating structure 4 are arranged on the buried oxide layer 2, the periodic grating structure 4 is arranged in front of the strip waveguide 3 along the light path direction and aligned with the strip waveguide 3, the cladding layer 5 is arranged on the strip waveguide 3 and the periodic grating structure 4, the shading structure 6 is arranged on the cladding layer 5, the shading structure 6 comprises light holes, the light holes are arranged in the propagation direction of the periodic grating structure 4, and the size of the light holes is larger than that of the periodic grating structure 4.
Specifically, the incident light entering the thin film lithium niobate grating coupler is transmitted to the periodic grating structure 4 through the strip waveguide 3, and the periodic grating structure 4 vertically radiates the incident light to the light transmission hole; at the same time, the incident light generates stray light in the substrate 1, the buried oxide layer 2 or the cladding layer 5, the stray light is refracted or reflected therein, and radiates towards the light shielding structure 6, and the light shielding structure 6 blocks the stray light from radiating towards the photodetector.
Specifically, when the power of the light and the stray light radiated by the periodic grating structure 4 is in the range of adjacent magnitude, and when the light and the stray light radiated by the periodic grating structure 4 are simultaneously incident into the optical detector, the optical detector can hardly distinguish the light and the stray light radiated by the periodic grating structure 4, the incident light cannot be effectively detected, and a larger signal-to-noise ratio is generated.
Specifically, the operating wavelength of the thin film lithium niobate grating coupler is about 1310nm to 1550nm.
Alternatively, the material of the periodic grating structure 4 and the bar waveguide 3 includes any one of a lithium niobate material, a silicon-based material, a polymer material, or a metal material.
Specifically, the strip waveguide 3 is used to transmit incident light.
Specifically, the periodic grating structure 4 couples and outputs light in the strip waveguide 3 as radiation space light to achieve efficient detection of the light detector.
Alternatively, the light shielding structure 6 and the light transmitting holes comprise a regular shape, the material of the light shielding structure 6 comprises a metal material, and the light shielding structure 6 may comprise a single layer or multiple layers of metal material.
In particular, the light shielding structure 6 is used to block most of the stray light generated by coupling in the laser and the thin film lithium niobate grating coupler.
Specifically, the shape of the light shielding structure 6 and the shape of the light holes thereof include regular shapes, and the specific shape is determined according to practical requirements, but the embodiment of the present invention is not limited thereto, and only specific embodiments are provided for reference, for example, as shown in fig. 2, the shape of the light shielding structure 6 and the shape of the light holes thereof may be circular or square.
Specifically, the thickness of the light shielding structure 6 is 10nm to 9 μm, and the specific thickness of the light shielding structure 6 is determined according to practical situations, and is not limited in the embodiment of the present invention.
Optionally, the material of the buried oxide layer 2 comprises an optical dielectric material comprising silicon dioxide.
Specifically, the buried oxide layer 2 is used to constrain the light transmitted in the strip waveguide 3, and the specific material of the buried oxide layer 2 is determined according to practical situations, which is not limited in the embodiment of the present invention, but only provided for reference, for example, the material of the buried oxide layer 2 may be silicon dioxide.
Alternatively, the material of the substrate 1 includes any one of quartz, sapphire, lithium niobate, or silicon.
Specifically, the substrate 1 plays a supporting role, and the specific material of the substrate 1 is determined according to practical situations, but the embodiment of the present invention is not limited thereto, and only the specific embodiment is provided for reference, for example, the substrate 1 may be a silicon substrate.
As shown in fig. 3, the embodiment of the invention provides a method for preparing a thin film lithium niobate grating coupler, which comprises the following steps:
s100: pretreating a substrate;
specifically, the pretreatment of the substrate includes: selecting a required material, such as silicon and the like, and preparing a substrate with a required size; the surface of the substrate is cleaned to remove impurities.
S200: preparing an oxygen buried layer on a substrate;
specifically, the buried oxide layer has the same size as the substrate, and the method for preparing the buried oxide layer includes, but is not limited to, a thermal oxidation process or a chemical vapor deposition process, and the specific preparation method is determined according to practical situations, which is not limited in the embodiments of the present invention.
Specifically, taking an oxygen-buried layer made of silicon dioxide as an example, the step of preparing the oxygen-buried layer by adopting a thermal oxidation process comprises the following steps:
enabling the silicon wafer and the gas containing the oxide to react at high temperature, so that a layer of compact silicon dioxide film is generated on the surface of the silicon wafer; wherein the gas comprises water vapor or oxygen, and the reaction temperature is 900-1200 ℃.
Specifically, the chemical vapor deposition process includes a tube sealing method or a tube opening method, including the steps of:
forming volatile substances on the buried oxide layer material;
transferring the volatile material to a deposition area;
chemical reactions occur on the substrate and solid materials are produced.
S300: preparing a strip waveguide and a periodic grating structure on the buried oxide layer;
specifically, the dimensions of both the strip waveguide and the periodic grating structure are smaller than the buried oxide layer; the short side of one end of the strip waveguide is flush with the edge of the buried oxide layer so as to receive input light; the periodic grating structure is aligned with the short side of the other end of the strip waveguide.
Optionally, preparing a strip waveguide and a periodic grating structure on the buried oxide layer, specifically including:
s301: the structures and the sizes of the strip-shaped waveguide and the periodic grating structure are set in an auxiliary mode through a photoetching technology;
s302: and (3) carrying out one or more times of etching on the lithium niobate material to obtain the strip waveguide and the periodic grating structure.
Specifically, a hard mask or photoresist mask is used to assist in the placement of the structures and dimensions of the stripe waveguide and periodic grating structures during the lithography process.
Specifically, the manner of etching the lithium niobate material includes, but is not limited to, dry etching or chemical mechanical polishing, and the specific etching manner is determined according to practical situations, which is not limited in the embodiments of the present invention.
S400: preparing a cladding layer on the strip waveguide and the periodic grating structure;
specifically, the cladding layer and the buried oxide layer have the same size, and the cladding layer covers the strip waveguide and the periodic grating structure; the method for preparing the cladding layer includes, but is not limited to, a thermal oxidation process or a chemical vapor deposition process, and the specific preparation method is determined according to practical situations, which is not limited in the embodiment of the invention.
S500: a light shielding structure is prepared on the cladding layer.
Optionally, preparing a light shielding structure on the cladding layer, specifically including:
s501: the shape and the size of the shading structure are set in an auxiliary way through a photoetching technology;
s502: plating metal material on the cladding layer by means of evaporation coating, sputtering coating or electroplating;
s503: and preparing the light holes of the shading structure by adopting a wet stripping or dry etching mode.
Specifically, wet stripping includes: the metal of the partial light shielding structure is peeled off from the cladding layer by a wet stripping solution, and the wet stripping solution comprises a photoresist stripping solution and the like.
Specifically, the dry etching includes:
the plasma gas is utilized to react with the part to be etched so as to realize etching; the type of the plasma gas is selected according to the material of the part to be etched;
or, the electric field is utilized to guide and accelerate the plasma, so that the plasma bombards the surface of the part to be etched, and atoms of the etched part are knocked out, thereby realizing the etching.
As shown in fig. 4, an embodiment of the present invention provides a thin film lithium niobate grating coupling device, which includes a laser, a photodetector, and the thin film lithium niobate grating coupler described above, where the laser emitting direction of the laser is oriented to the light path direction of the strip waveguide of the thin film lithium niobate grating coupler, and the light receiving surface of the photodetector is disposed opposite to the light hole of the thin film lithium niobate grating coupler.
Specifically, the light shielding structure 6 of the thin film lithium niobate grating coupler allows light vertically radiated from the periodic grating structure 4 to pass through the light transmission holes of the light shielding structure 6, and is incident into the photodetector 7, so that the light is converted into an optical circuit by the photodetector 7 and is detected; and stray light generated by the laser 9 and stray light generated by coupling of the thin film lithium niobate grating coupler are blocked by the shading structure.
In particular, the photodetector may be mounted on a thin film lithium niobate grating coupler, thereby reducing the loss of light that is perpendicularly radiated from the periodic grating structure to the photodetector, and the impact of the surrounding environment of the thin film lithium niobate grating coupling device on the detection of light.
Optionally, the size of the light-transmitting hole of the light shielding structure of the thin film lithium niobate grating coupler is larger than the size of the light-receiving surface of the photodetector.
It can be seen that the content in the above method embodiment is applicable to the embodiment of the present device, and the functions specifically implemented by the embodiment of the present device are the same as those of the embodiment of the above method, and the beneficial effects achieved by the embodiment of the above method are the same as those achieved by the embodiment of the above method.
The embodiment of the invention has the following beneficial effects: according to the embodiment, the shading structure is arranged on the cladding of the thin film lithium niobate grating coupler, and as the laser and the chip horizontal coupling end face light spots are difficult to be consistent in shape and size, the mode spot mismatch problem of the laser and the chip horizontal coupling end face light spots can be caused, so that the light part output by the laser enters the chip substrate, the buried oxide layer and the cladding to generate a large amount of stray light, reflection and refraction are generated, the shading structure blocks the stray light from entering the light detector, the adverse effect of the stray light on the signal to noise ratio of the light detector is effectively reduced, the signal to noise ratio of the light detector is improved, the preparation process of the embodiment is simple, the preparation cost is low, and the laser is compatible with the chip preparation process and different chip materials, and can be widely applied to practical production and application.
While the preferred embodiment of the present invention has been described in detail, the invention is not limited to the embodiment, and various equivalent modifications and substitutions can be made by those skilled in the art without departing from the spirit of the invention, and these modifications and substitutions are intended to be included in the scope of the present invention as defined in the appended claims.

Claims (10)

1. The thin film lithium niobate grating coupler is characterized by comprising a substrate, an oxygen buried layer, a strip waveguide, a periodic grating structure, a cladding layer and a shading structure; the buried oxide layer set up in on the substrate, the bar waveguide with periodic grating structure set up in on the buried oxide layer, periodic grating structure set up in along the light path orientation the place ahead of bar waveguide and with bar waveguide aligns, the covering set up in bar waveguide with periodic grating structure is last, the shading structure set up in on the covering, the shading structure includes the light trap, the light trap set up in the propagation direction of periodic grating structure, the size of light trap is greater than periodic grating structure's size.
2. The thin film lithium niobate grating coupler of claim 1, wherein the periodic grating structure and the material of the strip waveguide comprise any one of a lithium niobate material, a silicon-based material, a polymer material, or a metal material.
3. The thin film lithium niobate grating coupler of claim 1, wherein the light shielding structure and the light transmission holes comprise regular shapes, the material of the light shielding structure comprises a metal material, and the light shielding structure may comprise a single layer or multiple layers of the metal material.
4. The thin film lithium niobate grating coupler of claim 1, wherein the material of the oxygen buried layer comprises an optical dielectric material comprising silicon dioxide.
5. The thin film lithium niobate grating coupler of claim 1, wherein the material of the substrate comprises any one of quartz, sapphire, lithium niobate, or silicon.
6. The preparation method of the thin film lithium niobate grating coupler is characterized by comprising the following steps of:
pretreating a substrate;
preparing an oxygen buried layer on the substrate;
preparing a strip waveguide and a periodic grating structure on the buried oxide layer;
preparing a cladding layer over the strip waveguide and the periodic grating structure;
and preparing a shading structure on the cladding.
7. The method for manufacturing a thin film lithium niobate grating coupler according to claim 6, wherein the manufacturing of the stripe waveguide and the periodic grating structure on the buried oxide layer specifically comprises:
the structures and the sizes of the strip waveguide and the periodic grating structure are set in an auxiliary mode through a photoetching technology;
and etching the lithium niobate material one or more times to obtain the bar waveguide and the periodic grating structure.
8. The method for manufacturing a thin film lithium niobate grating coupler according to claim 6, wherein the manufacturing a light shielding structure on the cladding layer specifically comprises:
the shape and the size of the shading structure are set in an auxiliary way through a photoetching technology;
plating metal material on the cladding layer by means of evaporation coating, sputtering coating or electroplating;
and preparing the light holes of the shading structure by adopting a wet stripping or dry etching mode.
9. A thin film lithium niobate grating coupling device, comprising a laser, a photodetector and the thin film lithium niobate grating coupler according to any one of claims 1 to 5, wherein the laser emitting direction of the laser is towards the light path direction of the strip waveguide of the thin film lithium niobate grating coupler, and the light receiving surface of the photodetector is arranged opposite to the light transmitting hole of the thin film lithium niobate grating coupler.
10. The thin film lithium niobate grating coupling device of claim 9, wherein the size of the light-transmitting hole of the light-shielding structure of the thin film lithium niobate grating coupler is larger than the size of the light-receiving surface of the photodetector.
CN202311296644.5A 2023-10-08 2023-10-08 Thin film lithium niobate grating coupler and preparation method and device thereof Pending CN117348149A (en)

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