CN115236807A - End face coupling alignment method and semiconductor device - Google Patents
End face coupling alignment method and semiconductor device Download PDFInfo
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- CN115236807A CN115236807A CN202110438165.7A CN202110438165A CN115236807A CN 115236807 A CN115236807 A CN 115236807A CN 202110438165 A CN202110438165 A CN 202110438165A CN 115236807 A CN115236807 A CN 115236807A
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- 230000003287 optical effect Effects 0.000 claims abstract description 304
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 197
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 197
- 239000010703 silicon Substances 0.000 claims abstract description 197
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4296—Coupling light guides with opto-electronic elements coupling with sources of high radiant energy, e.g. high power lasers, high temperature light sources
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12147—Coupler
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Abstract
An end-face coupling alignment method, a semiconductor device, the method comprising: providing a laser chip, wherein the laser chip comprises an optical waveguide and a laser; providing a silicon optical chip, wherein the silicon optical chip is provided with a groove and comprises a first silicon optical waveguide and a second silicon optical waveguide, and the first silicon optical waveguide comprises a first waveguide part and a second waveguide part; placing at least one part of the laser chip into a groove of the silicon optical chip, wherein the emitting end of the laser faces the second silicon optical waveguide, and the optical waveguide is arranged between the first waveguide part and the second waveguide part at an interval; inputting an optical signal into the first waveguide section, the optical signal being output via the optical waveguide and the second waveguide section; and detecting the output light intensity of the optical signal, and determining the position of the laser chip relative to the silicon optical chip when the output light intensity is maximum as the alignment position of the laser chip. The invention can realize passive alignment.
Description
Technical Field
The invention relates to the technical field of photoelectricity, in particular to an end face coupling alignment method and a semiconductor device.
Background
In the existing silicon photofabrication process, an external III-IV group laser is used as a light source, and the input of the light source is realized in an epitaxial growth or coupling alignment mode. Specifically, the silicon material belongs to an indirect semiconductor material, and the material itself is difficult to be made into a laser element, so that an external laser needs to be adopted to realize the functions by matching with an optical component system, including various passive devices, electro-optical modulators, photodetectors and the like.
In specific application, the coupling of the laser light source is realized by the coupling alignment of the laser chip and the silicon photonic chip, and the structures for coupling alignment of the silicon photonic device and the light source mainly comprise an end face coupling structure and a grating coupler structure at present. Because the grating coupling has the characteristics of narrow bandwidth and sensitivity to polarization, and application requirements are difficult to meet in many scenes, the end face coupling capable of overcoming the defects is widely regarded and researched.
However, in the existing end-face coupling alignment technology, the alignment tolerance is low, the requirement on the precision of the alignment equipment is high, and the laser needs to be powered up during the packaging process to perform active alignment, which results in high production cost and high design complexity of the packaging fixture.
Disclosure of Invention
The technical problem to be solved by the invention is to provide an end face coupling alignment method and a semiconductor device, which can adopt the alignment of an alignment indicator laser of an optical waveguide in a laser chip so as to realize passive alignment, reduce the precision requirement on alignment equipment, and effectively reduce the production cost and the design complexity of a packaging clamp.
To solve the above technical problem, an embodiment of the present invention provides an end-face coupling alignment method, including: providing a laser chip, wherein the laser chip comprises an optical waveguide and a laser; providing a silicon optical chip, wherein the silicon optical chip is provided with a groove and comprises a first silicon optical waveguide and a second silicon optical waveguide, and the first silicon optical waveguide comprises a first waveguide part and a second waveguide part; placing at least one part of the laser chip into a groove of the silicon optical chip, wherein the emitting end of the laser faces the second silicon optical waveguide, the optical waveguide is arranged between the first waveguide part and the second waveguide part at a distance, the first end of the optical waveguide faces the first waveguide part, and the second end of the optical waveguide faces the second waveguide part; inputting an optical signal into the first waveguide section, the optical signal being output via the optical waveguide and the second waveguide section; and detecting the output light intensity of the optical signal, and determining the position of the laser chip relative to the silicon optical chip when the output light intensity is maximum as the alignment position of the laser chip.
Optionally, the direction of the laser emitted by the laser is parallel to the extending direction of the optical waveguide.
Optionally, one or more of the following are satisfied: the optical waveguide and the laser are positioned on the same horizontal plane; the first waveguide portion and the second waveguide portion are located at the same horizontal plane.
Optionally, placing at least a portion of the laser chip into the groove of the silicon optical chip includes: and absorbing and clamping the laser chip by adopting passive equipment.
Optionally, the laser chip is fixedly connected to an interposer, a surface area of the interposer is greater than an opening area of the groove, and a part of the interposer is suspended on a top surface of the silicon optical chip in a process of placing at least a part of the laser chip into the groove of the silicon optical chip; after determining the position of the laser chip relative to the silicon photonics chip when the output light intensity is at a maximum, the alignment method further comprises: providing a viscous material for the contact surface of the adapter plate and the silicon optical chip, and simultaneously adjusting the height position and the horizontal position of the adapter plate until the height position and the horizontal position of the adapter plate meet the alignment position of the laser chip; and curing the viscous material.
Optionally, one or more bumps are preset on the bottom surface of the groove of the silicon optical chip, and in the process of placing at least a part of the laser chip into the groove of the silicon optical chip, the surface of the laser chip faces the bump and has a space with the bump; after determining the position of the laser chip relative to the silicon photonics chip when the output light intensity is maximum, the alignment method further comprises: providing a viscous material between the laser chip and the silicon optical chip until the alignment position of the laser chip is met; and curing the viscous material.
Optionally, one or more bumps and an adhesive material are preset on the bottom surface of the groove of the silicon optical chip, and in the process of placing at least a part of the laser chip into the groove of the silicon optical chip, the surface of the laser chip faces the bump and has a space with the bump; after determining the position of the laser chip relative to the silicon photonics chip when the output light intensity is at a maximum, the alignment method further comprises: extruding the viscous material between the laser chip and the silicon optical chip until the alignment position of the laser chip is met; and curing the viscous material.
Optionally, before pressing the adhesive material between the laser chip and the silicon optical chip, the method further includes: and supplementing and providing the adhesive material between the laser chip and the silicon optical chip.
Optionally, the bump is formed by etching the bottom surface of the silicon optical chip.
Optionally, the adhesive material is selected from: heat-conducting glue and solder.
To solve the above technical problem, an embodiment of the present invention provides a semiconductor device, including: the laser chip comprises an optical waveguide and a laser; a silicon optical chip having a groove and comprising a first silicon optical waveguide and a second silicon optical waveguide, the first silicon optical waveguide comprising a first waveguide portion and a second waveguide portion; at least one part of the laser chip is positioned in the groove of the silicon optical chip, the emitting end of the laser faces the second silicon optical waveguide, the optical waveguide is arranged between the first waveguide part and the second waveguide part at an interval, the first end of the optical waveguide faces the first waveguide part, and the second end of the optical waveguide faces the second waveguide part; the position of the laser chip relative to the silicon optical chip is a position at which the output light intensity of the optical signal output via the first waveguide portion, the optical waveguide, and the second waveguide portion is maximum.
Optionally, the direction of the laser emitted by the laser is parallel to the extending direction of the optical waveguide.
Optionally, one or more of the following are satisfied: the optical waveguide and the laser are positioned on the same horizontal plane; the first waveguide section and the second waveguide section are located at the same horizontal plane.
Compared with the prior art, the technical scheme of the embodiment of the invention has the following beneficial effects:
in the embodiment of the present invention, by setting that the laser chip further includes an optical waveguide, the silicon optical chip further includes a first silicon optical waveguide, and the optical waveguide is spaced between the first waveguide portion and the second waveguide portion during alignment, and the first end of the optical waveguide faces the first waveguide portion, and the second end of the optical waveguide faces the second waveguide portion, it is possible to indicate the alignment condition of the two portions of the first silicon optical waveguide with the optical waveguide, and further prove that the two portions of the first silicon optical waveguide and the optical waveguide have achieved better alignment when the output light intensity is maximum, and indicate that the emitting end of the laser and the second silicon optical waveguide have also achieved alignment at this time, so that passive alignment can be achieved without powering up the laser, and compared with the prior art, it is necessary to power up the laser to perform active alignment, and with the solution of the embodiment of the present invention, it is possible to employ alignment of the passive laser in the laser optical waveguide sheet to indicate alignment of the passive laser, thereby achieving alignment, reducing the requirement for precision of alignment equipment, and reducing the cost of effective design of a jig.
Furthermore, the direction of the laser emitted by the laser is parallel to the extending direction of the optical waveguide, so that the alignment condition of the two parts of the first silicon optical waveguide and the optical waveguide can indicate the alignment condition of the emitting end of the laser and the second silicon optical waveguide more accurately, and the alignment accuracy of the laser is indicated by the alignment of the optical waveguide.
Furthermore, the optical waveguide and the laser are positioned on the same horizontal plane, and the first waveguide part and the second waveguide part are positioned on the same horizontal plane, so that the alignment condition of the two parts of the first silicon optical waveguide and the optical waveguide can further accurately indicate the alignment condition of the transmitting end of the laser and the second silicon optical waveguide, and the laser chip and the silicon optical chip can be manufactured by adopting a same-layer process, thereby effectively reducing the process complexity.
Further, laser chip fixedly connected with keysets, to the interface of keysets and silicon optical chip provides the stickness material, and adjusts simultaneously the high position and the horizontal position of keysets, until the high position and the horizontal position of keysets satisfy the alignment position of laser chip can realize the passive encapsulation to laser chip and silicon optical chip based on the keysets, and because the surface size of keysets is great, can further reduce the demand to the anchor clamps of encapsulating.
Furthermore, one or more bumps are preset on the surface of the bottom of the groove of the silicon optical chip, an adhesive material is provided between the laser chip and the silicon optical chip until the alignment position of the laser chip is met, and the laser chip and the silicon optical chip can be packaged based on the bumps.
Drawings
FIG. 1 is a schematic diagram of a prior art end-coupled alignment structure;
FIG. 2 is a flow chart of an end-coupling alignment method in an embodiment of the present invention;
fig. 3 to 9 are schematic structural diagrams of devices corresponding to steps in a first end-face coupling alignment method according to an embodiment of the present invention;
fig. 10 to fig. 16 are schematic device structures corresponding to steps in the second end-face coupling alignment method in the embodiment of the present invention.
Detailed Description
As described above, in the existing end-face coupling alignment technology, the alignment tolerance is low, the requirement on the precision of the alignment equipment is high, and the laser needs to be powered up during the packaging process to perform active alignment, which results in high production cost and high design complexity of the packaging fixture.
Referring to fig. 1, fig. 1 is a schematic diagram of an end-coupled alignment structure in the prior art.
Specifically, the end-face coupling alignment structure may include a silicon optical chip 101 and a laser 102, where the silicon optical chip 101 may include a waveguide 111 therein, and light emitted by the laser 102 needs to enter the waveguide 111, so that precise end-face coupling between the laser 102 and the waveguide 111 needs to be achieved.
The inventor of the present invention finds, through research, that in the prior art, the optimized end-face coupling tolerance is generally in the micron order, the requirement on packaging equipment is high, and in order to meet high-precision alignment, active packaging needs to be adopted, so that alignment can be adjusted in real time according to the direction of laser emitted by the laser 102. Since the chip size of the laser 102 is often small, the laser is powered up during the packaging process, which increases the design difficulty of the packaging fixture.
In the embodiment of the present invention, by setting that the laser chip further includes an optical waveguide, the silicon optical chip further includes a first silicon optical waveguide, and the optical waveguide is spaced between the first waveguide portion and the second waveguide portion during alignment, and the first end of the optical waveguide faces the first waveguide portion, and the second end of the optical waveguide faces the second waveguide portion, it is possible to indicate the alignment condition of the two portions of the first silicon optical waveguide with the optical waveguide, and further, when the output light intensity is maximum, it is proved that the two portions of the first silicon optical waveguide have already achieved a better alignment with the optical waveguide, and indicate that the emitting end of the laser and the second silicon optical waveguide have also achieved an alignment at this time, so that passive alignment can be achieved without powering up the laser, and compared with the prior art in which the laser needs to be powered up for active alignment, with the solution of the embodiment of the present invention, it is possible to achieve the same degree of passive alignment, by achieving the accuracy alignment, reducing the requirement for alignment equipment, and effectively reducing the design cost of the production and the complexity of the package.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
Referring to fig. 2, fig. 2 is a flowchart of an end-face coupling alignment method according to an embodiment of the present invention. The end-face coupling alignment method may include steps S21 to S25:
step S21: providing a laser chip, wherein the laser chip comprises an optical waveguide and a laser;
step S22: providing a silicon optical chip, wherein the silicon optical chip is provided with a groove and comprises a first silicon optical waveguide and a second silicon optical waveguide, and the first silicon optical waveguide comprises a first waveguide part and a second waveguide part;
step S23: placing at least one part of the laser chip into a groove of the silicon optical chip, wherein the emitting end of the laser is towards the second silicon optical waveguide, the optical waveguide is arranged between the first waveguide part and the second waveguide part in a spaced mode, the first end of the optical waveguide is towards the first waveguide part, and the second end of the optical waveguide is towards the second waveguide part;
step S24: inputting an optical signal into the first waveguide section, the optical signal being output via the optical waveguide and the second waveguide section;
step S25: and detecting the output light intensity of the optical signal, and determining the position of the laser chip relative to the silicon optical chip when the output light intensity is maximum as the alignment position of the laser chip.
It should be noted that the sequence numbers of the steps in this embodiment do not represent the limitation of the execution sequence of the steps, such as not limiting whether the laser chip is provided first or the silicon optical chip is provided first in step S21 and step S22.
The above steps will be described with reference to fig. 3 to 9.
Fig. 3 to fig. 9 are schematic device structures corresponding to steps of the first end-face coupling alignment method in the embodiment of the present invention.
Referring to fig. 3 and 4 in combination, fig. 3 is a cross-sectional view of fig. 4 along cutting line A1-A2.
Specifically, a silicon optical chip 201 is provided, the silicon optical chip 201 has a groove 204 and includes a first silicon optical waveguide 210 and a second silicon optical waveguide 220, the first silicon optical waveguide 210 includes a first waveguide portion 211 and a second waveguide portion 212, and the second silicon optical waveguide 220 is connected with an optical path device 230.
More specifically, the silicon optical chip 201 may further include an active functional device and a passive device such as a coupling grating. The recess 204 may be formed by a deep etching process after the active functional device and the passive device are formed.
Referring to fig. 5 and 6 in combination, fig. 5 is a cross-sectional view of fig. 6 along cut line B1-B2.
Specifically, a laser chip 301 is provided, the laser chip 301 comprising an optical waveguide 320 and a laser 310.
Further, the direction in which the laser 310 emits laser light may be parallel to the extending direction of the optical waveguide 320.
In the embodiment of the present invention, by setting the direction of the laser 310 emitting laser light to be parallel to the extending direction of the optical waveguide 320, the direction of the optical waveguide 320 can indicate the direction of the laser 310 more accurately, and further, the alignment condition between the two parts of the first silicon optical waveguide 210 and the optical waveguide 320 can indicate the alignment condition between the emitting end of the laser 310 and the second silicon optical waveguide 220 more accurately, so as to improve the accuracy of indicating the alignment of the laser through the alignment of the optical waveguide 320.
Further, one or more of the following are satisfied: the optical waveguide 320 is located at the same level as the laser 310; the first waveguide portion 211 is located at the same level as the second waveguide portion 212.
In the embodiment of the present invention, by arranging the optical waveguide 320 and the laser 310 to be located at the same horizontal plane, and the first waveguide portion 211 and the second waveguide portion 212 to be located at the same horizontal plane, the alignment condition between the two portions of the first silicon optical waveguide 210 and the optical waveguide 320 can be further enabled to more accurately indicate the alignment condition between the emitting end of the laser 310 and the second silicon optical waveguide 210, and the same layer process can be adopted for manufacturing when the laser chip 301 and the silicon optical chip 201 are manufactured, thereby effectively reducing the process complexity.
In a specific implementation, the distance between the optical waveguide 320 and the laser 310 may be equal to the distance between the second waveguide portion 212 and the second silicon optical waveguide 220, and the offset angle between the optical waveguide 320 and the laser 310 may be equal to the offset angle between the second waveguide portion 212 and the second silicon optical waveguide 220, so that when the optical waveguide 320 and the laser 310 are aligned, the second waveguide portion 212 and the second silicon optical waveguide 220 can be aligned.
Further, the distance between the axis of the optical waveguide 320 and the axis of the laser 310 may be equal to the distance between the axis of the second waveguide portion 212 and the axis of the second silicon optical waveguide 220, and the offset angle between the axis of the optical waveguide 320 and the axis of the laser 310 may be equal to the offset angle between the axis of the second waveguide portion 212 and the axis of the second silicon optical waveguide 220, so that the second waveguide portion 212 and the second silicon optical waveguide 220 can be aligned when the optical waveguide 320 and the laser 310 are aligned when the widths (or the circumferences) of the optical waveguide 320, the laser 310, the second waveguide portion 212, and the second silicon optical waveguide 220 are not the same as each other.
Referring to fig. 7, the laser chip 301 is fixedly connected with an interposer 340 having a surface area larger than an opening area of the groove 201 (refer to fig. 3).
In a specific implementation, the laser chip 301 and the interposer 340 may be packaged, and the electrode circuit connection of the laser 310 is realized by metal soldering or wire bonding, however, in the embodiment of the present invention, the alignment can be realized in a passive condition without depending on the active configuration of the interposer.
Referring to fig. 8 and 9 in combination, fig. 8 is a cross-sectional view of fig. 9 along cut line A1-A2.
Specifically, at least a part of the laser chip 301 is placed in a groove of the silicon optical chip 201, the emitting end of the laser 310 faces the second silicon optical waveguide 220, the optical waveguide 320 is spaced between the first waveguide portion 211 and the second waveguide portion 212, the first end of the optical waveguide 320 faces the first waveguide portion 211, and the second end of the optical waveguide 320 faces the second waveguide portion 212.
During placement of at least a portion of the laser chip 301 into the recess of the silicon photonics chip 201, a portion of the interposer 340 overhangs the top surface of the silicon photonics chip 201.
Inputting an optical signal to the first waveguide portion 211, as shown by a dotted line, outputting the optical signal via the optical waveguide 320 and the second waveguide portion 212, detecting an output light intensity of the optical signal, and determining a position of the laser chip 301 relative to the silicon optical chip 201 when the output light intensity is maximum as an alignment position of the laser chip 301.
Specifically, in the process of inputting the optical signal, the laser chip 301 may be position-adjusted (for example, moved up and down and left and right) in the groove of the silicon optical chip 201, and the output light intensity of the optical signal is detected at the same time until the output light intensity is maximum, which is recorded as the alignment position of the laser chip 301 and the silicon optical chip 201.
It should be noted that the output light intensity is used to indicate the alignment between the optical waveguide 320 and the second waveguide portion 212, and the output light intensity is the largest to indicate the most aligned state between the optical waveguide 320 and the second waveguide portion 212, as mentioned above, the distance between the optical waveguide 320 and the laser 310 may be equal to the distance between the second waveguide portion 212 and the second silicon optical waveguide 220, and then the laser 310 and the second silicon optical waveguide 220 are also aligned the most when the output light intensity is the largest.
In the embodiment of the present invention, by providing that the laser chip 301 further includes the optical waveguide 320, the silicon optical chip 201 further includes the first silicon optical waveguide 210, and the optical waveguide 320 is spaced between the first waveguide portion 211 and the second waveguide portion 212 during alignment, and the first end of the optical waveguide 320 faces the first waveguide portion 211, and the second end of the optical waveguide 320 faces the second waveguide portion 212, it is possible to adopt an alignment condition of two portions of the first silicon optical waveguide 211 and the optical waveguide 320, and indicate an alignment condition of the emitting end of the laser 310 and the second silicon optical waveguide 212, and further prove that, when the output light intensity is maximum, the two portions of the first silicon optical waveguide 211 and the optical waveguide 320 have achieved good alignment, and indicate that, at this time, the emitting end of the laser 310 and the second silicon optical waveguide 212 have also achieved alignment, so that passive alignment can be achieved without powering on the laser 310.
It should be noted that, compared with the prior art in which the laser 310 needs to be powered up and active aligned, the scheme of the embodiment of the present invention may be adopted to indicate alignment of the laser 310 by alignment of the optical waveguide 320 in the laser chip 301, thereby implementing passive alignment, reducing the requirement for precision of alignment equipment, and effectively reducing the production cost and the design complexity of the packaging jig.
Further, placing at least a portion of the laser chip into the recess of the silicon photonics chip comprises: the laser chip 301 is sucked and held with a passive device 400.
In particular, the passive device 400 may be selected from: suction heads, suction cups, grippers, clamps and other passive clamps.
In the process of designing the passive device in the embodiment of the present invention, the power supply requirement in the process of moving the laser chip 301 does not need to be considered, so that the passive device can be selected from conventional passive jigs, the complexity of design and application is reduced, and the production efficiency is improved.
Further, after determining the position of the laser chip 301 relative to the silicon optical chip 201 when the output light intensity is maximum, there may be a case where the adapter plate 340 is suspended on the surface of the silicon optical chip 201, as shown in fig. 9, and then the adapter plate 340 and the laser chip 301 may be fixed.
Specifically, the alignment method further includes: providing an adhesive material to the contact surface of the adapter plate 340 and the silicon optical chip 201, and adjusting the height position and the horizontal position of the adapter plate 340 at the same time until the height position and the horizontal position of the adapter plate 340 meet the alignment position of the laser chip 301; and curing the viscous material.
In the embodiment of the present invention, the interposer 340 is fixedly connected to the laser chip 301, an adhesive material is provided to a contact surface between the interposer 340 and the silicon optical chip 201, and the height position and the horizontal position of the interposer 340 are adjusted at the same time until the height position and the horizontal position of the interposer 340 meet the alignment position of the laser chip 301, so that the laser chip 301 and the silicon optical chip 201 can be passively packaged based on the interposer 340, and the requirement for a packaging fixture can be further reduced due to the large surface size of the interposer 340.
Further, the viscous material may be a material having a viscosity coefficient within a predetermined viscosity coefficient range. The viscosity coefficient, which may also be referred to as a viscosity coefficient, describes, among other things, a physical quantity of a viscosity (viscosity) property of a liquid.
It can be understood that the upper limit of the preset viscosity coefficient range cannot be too high, otherwise, the viscosity is too high, and the material is too hard, which easily causes the accuracy of position adjustment to be reduced; the lower limit of the preset viscosity coefficient range cannot be too low, otherwise, the viscosity is too low, and the material is too soft, so that the position fixing is difficult.
In particular, the adhesive material may be selected, limited by the predetermined viscosity coefficient range, from: heat conducting glue and solder.
The solder may be a metal alloy material for adding to the weld, the overlay, and the braze, and may be a composition of a conventional solder, which is not limited in this application.
Specifically, the heat conducting glue and the solder have fluidity, and can be cured through a curing process, and the method is particularly suitable for the situation that the relative position is determined firstly and then the position is cured through a viscous material in the application.
Referring to fig. 10 to 16, fig. 10 to 16 are schematic structural diagrams of devices corresponding to steps in the second end-face coupling alignment method according to the embodiment of the present invention.
Referring collectively to fig. 10 and 11, fig. 10 and 11 are cross-sectional views taken along cut line C1-C2.
Specifically, a silicon optical chip 501 is provided, the silicon optical chip 501 has a groove 504 and includes a first silicon optical waveguide 510 and a second silicon optical waveguide 520, the first silicon optical waveguide 510 includes a first waveguide portion 511 and a second waveguide portion 512, and the second silicon optical waveguide 520 is connected to an optical path device 530.
One or more bumps 550 are pre-disposed on the bottom surface of the recess of the silicon optical chip 501.
Further, the bump 550 may be formed by etching the bottom surface of the silicon optical chip 501.
Specifically, the formation of the grooves 504 and bumps 550 in the silicon photonics chip 501 may be accomplished using a two-step Etch (Etch) process.
More specifically, a first step etching process may be used to form a first groove having a depth smaller than that of the groove 504, and then a second step etching process may be used to etch the bottom surface of the first groove to form the groove 504 and the bump 550.
In the embodiment of the present invention, the bumps 550 are used to support the laser chip, so that the laser chip is stabilized in the grooves 504 of the silicon optical chip 501.
It is understood that the height of the bump 550 corresponds to the height of the laser chip and can correspond to the depth of the groove 504, so as to facilitate the subsequent package wire bonding step, for example, the height and the depth of the groove 504 can be set; the height of the bump 550 and the height of the laser chip and the depth of the groove 504 may be slightly smaller, for example, the height and the depth of the groove 504 are set to be smaller, so that the sum of the height of the bump 550, the height of the laser chip and the thickness of the adhesive material is consistent with the depth of the groove 504 after the adhesive material is added in the subsequent step.
More specifically, the silicon optical chip 501 may further include an active functional device and a passive device such as a coupling grating. The recess 504 may be formed by a deep etching process after the active functional devices and the passive devices are formed.
Referring collectively to fig. 12 and 13, fig. 12 is a cross-sectional view of fig. 13 along cut line D1-D2.
Specifically, a laser chip 601 is provided, and the laser chip 601 includes an optical waveguide 620 and a laser 610 therein.
Further, the direction in which the laser 610 emits laser light may be parallel to the extending direction of the optical waveguide 620.
In the embodiment of the present invention, by setting the direction of the laser emitted by the laser 610 to be parallel to the extending direction of the optical waveguide 620, the direction of the optical waveguide 620 can indicate the direction of the laser 610 more accurately, and further, the alignment condition between the two parts of the first silicon optical waveguide 210 and the optical waveguide 620 can indicate the alignment condition between the emitting end of the laser 610 and the second silicon optical waveguide 220 more accurately, so as to improve the accuracy of indicating the alignment of the laser through the alignment of the optical waveguide 620.
Further, one or more of the following are satisfied: the optical waveguide 620 is located at the same level as the laser 610; the first waveguide portion 511 and the second waveguide portion 512 are located at the same level.
In the embodiment of the present invention, by arranging the optical waveguide 620 and the laser 610 to be located at the same horizontal plane, and the first waveguide portion 511 and the second waveguide portion 512 to be located at the same horizontal plane, the alignment condition between the two portions of the first silicon optical waveguide 510 and the optical waveguide 620 can further indicate the alignment condition between the emitting end of the laser 610 and the second silicon optical waveguide 510 more accurately, and the laser chip 601 and the silicon optical chip 501 can be manufactured by a same layer process, thereby effectively reducing the process complexity.
Referring to fig. 14 and 15 in combination, fig. 14 is a cross-sectional view of fig. 15 along cut line C1-C2.
Specifically, at least a part of the laser chip 601 is placed in the groove 504 (refer to fig. 10) of the silicon optical chip 501, the emitting end of the laser 610 faces the second silicon optical waveguide 520, the optical waveguide 620 is spaced between the first waveguide portion 511 and the second waveguide portion 512, the first end of the optical waveguide 620 faces the first waveguide portion 511, and the second end of the optical waveguide 620 faces the second waveguide portion 512.
During placement, the surface of the laser chip 601 faces the bump 550 with a space between the bump 550.
Inputting an optical signal to the first waveguide portion 511, as shown by a dotted line, outputting the optical signal via the optical waveguide 620 and the second waveguide portion 512, detecting an output light intensity of the optical signal, and determining a position of the laser chip 601 relative to the silicon optical chip 501 when the output light intensity is maximum as an alignment position of the laser chip 601.
In the embodiment of the present invention, the alignment condition between the two portions of the first silicon optical waveguide 511 and the optical waveguide 620 may be adopted to indicate the alignment condition between the emitting end of the laser 610 and the second silicon optical waveguide 512, and further when the output light intensity is maximum, it is proved that the two portions of the first silicon optical waveguide 511 and the optical waveguide 620 have already achieved a better alignment, and the emitting end of the laser 610 and the second silicon optical waveguide 512 have also achieved an alignment at this time, so that the passive alignment can be achieved without powering up the laser 610. It should be noted that, compared with the prior art in which a laser needs to be powered up for active alignment, by using the solution of the embodiment of the present invention, alignment of the optical waveguide 620 in the laser chip 601 may be used to indicate alignment of the laser 610, thereby implementing passive alignment, reducing the precision requirement for alignment equipment, and effectively reducing the production cost and the design complexity of the packaging jig.
Further, placing at least a portion of the laser chip into the recess of the silicon photonics chip comprises: the laser chip 601 is sucked and held with a passive device 700.
In particular, the passive device 700 may be selected from: suction heads, suction cups, grippers, clamps and other passive clamps.
In the process of designing the passive device in the embodiment of the invention, the power supply requirement in the process of moving the laser chip 601 does not need to be considered, so that the passive device can be selected from conventional passive clamps, the complexity of design and application is reduced, and the production efficiency is improved.
Further, after determining the position of the laser chip 601 relative to the silicon photonic chip 501 when the output light intensity is maximum, there may be a case where the laser chip 601 is suspended in a groove, as shown in fig. 14, and then the laser chip 601 may be fixed based on the bump 550.
Referring to fig. 16, the alignment method may further include: providing an adhesive material 800 between the laser chip 601 and the silicon optical chip 501 until the alignment position of the laser chip 601 is met; the adhesive material 800 is subjected to a curing process.
Further, the adhesive material 800 may be a material having a viscosity coefficient within a predetermined viscosity coefficient range. Wherein the viscosity coefficient, which may also be referred to as viscosity coefficient, describes a physical quantity of a viscosity (viscosity) property of the liquid.
It can be understood that the upper limit of the preset viscosity coefficient range cannot be too high, otherwise, the viscosity is too high, and the material is too hard, which easily causes the accuracy of position adjustment to be reduced; the lower limit of the preset viscosity coefficient range cannot be too low, otherwise, the viscosity is too low, and the material is too soft, so that the position fixing is difficult.
Specifically, the adhesive material 800 may be selected from the group consisting of: heat conducting glue and solder.
The solder may be a metal alloy material for adding to the weld, the overlay, and the braze, and may be a composition of a conventional solder, which is not limited in this application.
Specifically, the heat conducting glue and the solder have fluidity, and can be solidified through a solidification process, and the method is particularly suitable for the situation that the relative position is determined firstly and then the position solidification is carried out through the viscous material 800 in the application.
In the embodiment of the present invention, one or more bumps 550 are pre-disposed on the bottom surface of the groove of the silicon photonic chip 501, and an adhesive material 800 is provided between the laser chip 601 and the silicon photonic chip 501 until the alignment position of the laser chip 601 is satisfied, so that the laser chip 601 and the silicon photonic chip 501 can be packaged based on the bumps 550.
In another specific implementation of the embodiment of the present invention, in the end-coupling alignment method shown in fig. 14, before at least a portion of the laser chip 601 is placed in the groove of the silicon optical chip 501, an adhesive material 800 is pre-disposed on the bottom surface of the groove of the silicon optical chip 501.
Further, the end-face coupling alignment method may further include: the adhesive material 800 is additionally provided between the laser chip 601 and the silicon photonic chip 501.
Specifically, when the silicon optical chip 501 is provided, or before the laser chip 601 is placed, the adhesive material 800 may be pre-disposed on the bottom surface of the groove to serve as a first portion of the adhesive material 800 for fixing the laser chip 601, and then, as needed, one or more times of replenishment may be performed to add a second portion of the adhesive material 800.
With continued reference to fig. 16, by presetting the adhesive material 800 or presetting and supplementing the adhesive material 800, the sum of the thickness of the adhesive material 800, the height of the bump 550 and the distance from the optical waveguide 620 in the laser chip 601 to the edge of the laser chip 601 (i.e., the length D in fig. 16) may be greater than the distance from the second waveguide portion 512 of the silicon photonic chip 501 to the bottom surface of the groove (i.e., the length L in fig. 16).
The thickness of the adhesive material 800, the height of the bump 550, the distance from the optical waveguide 620 in the laser chip 601 to the edge of the laser chip 601, and the distance from the second waveguide portion 512 of the silicon optical chip 501 to the bottom surface of the groove are all perpendicular to the surface of the silicon optical chip 501.
Further, after determining the position of the laser chip 601 relative to the silicon photonic chip 501 when the output light intensity is maximum, the alignment method may further include: pressing the adhesive material between the laser chip 601 and the silicon optical chip 501 until the alignment position of the laser chip 601 is met; the adhesive material 800 is subjected to a curing process.
Specifically, since D > L, the adhesive material 800 may be pressed to satisfy the alignment position of the laser chip 601.
With continued reference to fig. 16, after the laser chip 601 is fixed in its aligned position, the electrode circuits of the laser 610 may be connected by metal bonding or wire bonding, for example, by using bonding wires 900, so as to realize the electrical functions of the laser chip 601 and the silicon optical chip 501.
It is understood that, in the first embodiment shown in fig. 9, after the laser chip 301 is fixed at the alignment position, the electrode circuits of the laser 310 may also be connected by a suitable method such as metal soldering or wire bonding, and the following packaging process is not described herein again.
To solve the above technical problem, an embodiment of the present invention further provides a semiconductor device (see fig. 9), including: a laser chip 301, wherein the laser chip 301 comprises an optical waveguide 320 and a laser 310; a silicon photonics chip 201, the silicon photonics chip 201 having a groove and including a first silicon photonics waveguide and a second silicon photonics waveguide 220, the first silicon photonics waveguide including a first waveguide portion 211 and a second waveguide portion 212; wherein at least a part of the laser chip 301 is located in the groove of the silicon optical chip 201, the emitting end of the laser 310 faces the second silicon optical waveguide 212, the optical waveguide 220 is spaced between the first waveguide portion 211 and the second waveguide portion 212, the first end of the optical waveguide 220 faces the first waveguide portion 211, and the second end of the optical waveguide 220 faces the second waveguide portion 212; the position of the laser chip 301 relative to the silicon photonic chip 201 is a position at which the output light intensity of the optical signal output via the first waveguide portion 211, the optical waveguide 220, and the second waveguide portion 212 is maximum.
It should be noted that the output light intensity is used to indicate the alignment between the optical waveguide 320 and the second waveguide portion 212, and the output light intensity is the maximum to indicate the most aligned state between the optical waveguide 320 and the second waveguide portion 212, as mentioned above, the distance between the optical waveguide 320 and the laser 310 may be equal to the distance between the second waveguide portion 212 and the second silicon optical waveguide 220, so that the laser 310 and the second silicon optical waveguide 220 are aligned most when the output light intensity is the maximum.
Specifically, the position of the laser chip 301 relative to the silicon optical chip 201 may be determined by, in the process of inputting the optical signal, adjusting the position of the laser chip 301 in the groove of the silicon optical chip 201 (for example, moving up and down, left and right), and detecting the output light intensity of the optical signal until the output light intensity is maximum, and the determined position is recorded as the alignment position of the laser chip 301 and the silicon optical chip 201.
In a specific implementation, the alignment positions of the laser chip 301 and the silicon optical chip 201 may be fixed subsequently, which may specifically refer to the foregoing description and the description in fig. 16, and is not described herein again.
Further, the direction in which the laser emits laser light may be parallel to the extending direction of the optical waveguide.
Further, one or more of the following may be satisfied: the optical waveguide and the laser are positioned on the same horizontal plane; the first waveguide portion and the second waveguide portion are located at the same horizontal plane.
For more details on the laser, the optical waveguide, the first waveguide portion, and the second waveguide portion, please refer to the above detailed description of the end-face coupling alignment method, which is not repeated herein.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected by one skilled in the art without departing from the spirit and scope of the invention, as defined in the appended claims.
Claims (13)
1. An end-coupling alignment method, comprising:
providing a laser chip, wherein the laser chip comprises an optical waveguide and a laser;
providing a silicon optical chip, wherein the silicon optical chip is provided with a groove and comprises a first silicon optical waveguide and a second silicon optical waveguide, and the first silicon optical waveguide comprises a first waveguide part and a second waveguide part;
placing at least one part of the laser chip into a groove of the silicon optical chip, wherein the emitting end of the laser is towards the second silicon optical waveguide, the optical waveguide is arranged between the first waveguide part and the second waveguide part in a spaced mode, the first end of the optical waveguide is towards the first waveguide part, and the second end of the optical waveguide is towards the second waveguide part;
inputting an optical signal into the first waveguide section, the optical signal being output via the optical waveguide and the second waveguide section;
and detecting the output light intensity of the optical signal, and determining the position of the laser chip relative to the silicon optical chip when the output light intensity is maximum as the alignment position of the laser chip.
2. The end-coupling alignment method of claim 1, wherein the direction of lasing of the laser is parallel to the direction of extension of the optical waveguide.
3. The end-face coupling alignment method of claim 1, wherein one or more of the following is satisfied:
the optical waveguide and the laser are positioned on the same horizontal plane;
the first waveguide portion and the second waveguide portion are located at the same horizontal plane.
4. The end-coupling alignment method of claim 1, wherein placing at least a portion of the laser chip into a recess of the silicon photonics chip comprises:
and absorbing and clamping the laser chip by adopting passive equipment.
5. The end-coupling alignment method of claim 1, wherein an interposer is fixedly attached to the laser chip, the interposer having a surface area larger than an opening area of a recess, and a portion of the interposer is suspended from a top surface of the silicon photonics chip during the process of placing at least a portion of the laser chip into the recess of the silicon photonics chip;
after determining the position of the laser chip relative to the silicon photonics chip when the output light intensity is at a maximum, the alignment method further comprises:
providing a viscous material for the contact surface of the adapter plate and the silicon optical chip, and simultaneously adjusting the height position and the horizontal position of the adapter plate until the height position and the horizontal position of the adapter plate meet the alignment position of the laser chip;
and curing the viscous material.
6. The method according to claim 1, wherein one or more bumps are pre-disposed on the bottom surface of the groove of the silicon optical chip, and the surface of the laser chip faces the bumps with a space therebetween during the process of placing at least a portion of the laser chip into the groove of the silicon optical chip;
after determining the position of the laser chip relative to the silicon photonics chip when the output light intensity is maximum, the alignment method further comprises:
providing a viscous material between the laser chip and the silicon optical chip until the alignment position of the laser chip is met;
and curing the viscous material.
7. The method according to claim 1, wherein one or more bumps and adhesive material are pre-disposed on the bottom surface of the groove of the silicon optical chip, and the surface of the laser chip faces the bumps with a space therebetween during the process of placing at least a portion of the laser chip into the groove of the silicon optical chip;
after determining the position of the laser chip relative to the silicon photonics chip when the output light intensity is at a maximum, the alignment method further comprises:
extruding a viscous material between the laser chip and the silicon optical chip until the alignment position of the laser chip is met;
and curing the viscous material.
8. The method of claim 7, further comprising, prior to compressing adhesive material between the laser chip and the silicon die:
and supplementing and providing the adhesive material between the laser chip and the silicon optical chip.
9. The end-face coupling alignment method of any one of claims 6 to 8, wherein the bump is formed by etching the bottom surface of the silicon optical chip.
10. The endface coupling alignment method of any one of claims 5-8, wherein the adhesive material is selected from the group consisting of: heat-conducting glue and solder.
11. A semiconductor device, comprising:
the laser chip comprises an optical waveguide and a laser;
a silicon photonic chip having a groove and comprising a first silicon photonic waveguide and a second silicon photonic waveguide, the first silicon photonic waveguide comprising a first waveguide portion and a second waveguide portion;
wherein at least a part of the laser chip is located in the groove of the silicon optical chip, the emitting end of the laser is directed to the second silicon optical waveguide, the optical waveguide is spaced between the first waveguide portion and the second waveguide portion, the first end of the optical waveguide is directed to the first waveguide portion, and the second end of the optical waveguide is directed to the second waveguide portion;
the position of the laser chip relative to the silicon optical chip is a position at which the output light intensity of the optical signal output via the first waveguide portion, the optical waveguide, and the second waveguide portion is maximum.
12. The semiconductor device according to claim 11,
the direction of the laser emitted by the laser is parallel to the extending direction of the optical waveguide.
13. The semiconductor device of claim 11, wherein one or more of the following is satisfied: the optical waveguide and the laser are positioned on the same horizontal plane;
the first waveguide portion and the second waveguide portion are located at the same horizontal plane.
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| CN115755290A (en) * | 2022-11-03 | 2023-03-07 | 北京大学 | Coupling structure and method for optical waveguide in edge-emitting laser chip and silicon optical chip |
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| CN115236807B (en) | 2024-04-05 |
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