CN103630969A - Integrated optical power divider capable of customizing splitting ratio, and manufacturing method thereof - Google Patents

Integrated optical power divider capable of customizing splitting ratio, and manufacturing method thereof Download PDF

Info

Publication number
CN103630969A
CN103630969A CN201310192081.5A CN201310192081A CN103630969A CN 103630969 A CN103630969 A CN 103630969A CN 201310192081 A CN201310192081 A CN 201310192081A CN 103630969 A CN103630969 A CN 103630969A
Authority
CN
China
Prior art keywords
waveguide
light path
under
clad layer
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201310192081.5A
Other languages
Chinese (zh)
Other versions
CN103630969B (en
Inventor
胡灿栋
刘勇
张丽丹
张晓川
陆昇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HANGZHOU TIANYE COMMUNICATION EQUIPMENT CO Ltd
Original Assignee
HANGZHOU TIANYE COMMUNICATION EQUIPMENT CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HANGZHOU TIANYE COMMUNICATION EQUIPMENT CO Ltd filed Critical HANGZHOU TIANYE COMMUNICATION EQUIPMENT CO Ltd
Priority to CN201310192081.5A priority Critical patent/CN103630969B/en
Publication of CN103630969A publication Critical patent/CN103630969A/en
Application granted granted Critical
Publication of CN103630969B publication Critical patent/CN103630969B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Optical Integrated Circuits (AREA)

Abstract

The invention discloses an integrated optical power divider capable of customizing splitting ratio, and a manufacturing method thereof, and relates to the technical field of optical communication light splitting, and an objective is to provide an integrated optical power divider capable of customizing splitting ratio, and a manufacturing method thereof. The integrated optical power divider can be manufactured according to a self-designed splitting ratio, and stability is good, and the optical power divider is simple in manufacturing and low in cost. The method comprises steps of: selecting quartz as to make a substrate layer, selecting a pure material with low refractive index to make a lower cladding, selecting a doped material with high refractive index to make a core layer, processing the core layer into a Y-shaped waveguide optical path, selecting a doped material with the same refractive index with the lower cladding to make an upper cladding, arranging a waveguide groove in the upper cladding on a side of a tapering branching section of the Y-shaped waveguide optical path, selecting an auxiliary waveguide material whose refractive index satisfies design requirements of the splitting ratio to inject into the waveguide groove, after solidification, forming an auxiliary waveguide block, and finally packaging a cover plate through a packaging technology. The integrated optical power divider is mainly used in the optical communication light splitting technology.

Description

A kind of integrated optical power shunt that can customize splitting ratio and preparation method thereof
Technical field
The present invention relates to optical communication light splitting technology field, relate in particular to a kind of integrated optical power shunt that can customize splitting ratio and preparation method thereof.
Background technology
At present, there are two kinds of technological approaches can obtain actual variable optical power distributor: a kind of is y-type optical fiber fused tapered luminous power variable coupler, but because device size is large, and be subject to the such environmental effects such as stress, stable luminous power distribution ratio can not be provided; Another kind is to utilize electric light or thermo-optic effect, by supplemantary electrode or thermode by waveguide, with change y-shaped waveguide light path wherein the mode of the refractive index of a branch-waveguide realize adjustable luminous energy and distribute, but because the technological requirement of making supplemantary electrode or thermode is higher, increased to a great extent cost simultaneously.
China Patent Publication No. CN1467926, open day is on January 14th, 2004, name is called in the scheme of " optical power divider " and discloses a kind of optical power divider, there is an input waveguide and for input waveguide being shunted to N output optical waveguide of N light signal, comprising: at least two optical branching devices that there is planar lightwave circuit component structure and be separated with the distance of presetting in one chip; And for aim at a plurality of optical branching devices input and output optical waveguide to Quasi-Waveguide.Weak point is, this optical power divider can only be divided into two ways of optical signals by light beam signal averaging.Because the decay of light signal is relevant with transmission distance, transmission distance is distance light signal attenuation more more, and the light signal arriving is more at a distance just more weak.If the distance that a road light signal need to transmit is distant, and the distance that another road light signal need to transmit is closer, transmit so Na mono-road optical signals far away in will be through transmission distance far away, a little less than the light signal that causes arriving remote destination becomes very, likely weak to the degree that can not identify, and then affect the long-distance transmissions of light signal, at remote end, need the light signal strengthening; And nearer this road optical signals of transmission range is nearer in the distance of process, the light signal that causes arriving destination is closely also very strong, and light signal is by force to considerably beyond the needed normal light signal in destination closely, at end closely, produced unnecessary light signal.Far-end need to increase light signal, and near-end truly has unnecessary light signal, and this is because light signal allocation proportion is than bad, and this original enough bundle light signal is given and wasted a part.The optical power divider that light beam signal averaging is divided into two ways of optical signals, can cause original enough light beam signals can waste a part, and the cost performance that seems is lower.
Title is explained:
1, CVD (Chemical Vapor Deposition, chemical vapor deposition), refer to containing, form the gaseous reactant of film element or the steam of liquid reactants and react required other gas and introduce reaction chamber, in the process of substrate surface generation chemical reaction film former.In VLSI (very large scale integrated circuit), a lot of films are all to adopt the preparation of CVD method.After CVD processes, Surface Treated Films adherence approximately improves 30%, prevents the bending of high-tenacity steel, stretches and waits the scratch producing while being shaped.
2, photoetching and etching, these two words are the important steps in semiconductor technology.(1) " photoetching " refer to and cover set photolithography plate filling on the wafer of photoresist (or being silicon chip), then with ultraviolet ray, across photolithography plate, wafer is carried out the irradiation of certain hour.Principle utilizes ultraviolet ray to make part photoresist rotten exactly, is easy to corrosion.(2) after " etching " is photoetching, with corrosive liquid, rotten part photoresist is eroded to (positive glue), crystal column surface just shows the figure of semiconductor devices and connection thereof.Then with another kind of corrosive liquid, wafer is corroded, form semiconductor devices and circuit thereof.
Summary of the invention
The present invention is in order to solve existing optical power divider, light beam signal averaging can only be divided into two ways of optical signals, can cause original enough light beam signals can waste a part, the deficiency that cost performance is lower, provides a kind of integrated optical power shunt that can customize splitting ratio and preparation method thereof, this shunt and preparation method thereof, can need to manufacture according to the splitting ratio of designed, designed during fabrication, and good stability, makes simply, and cost is low.
To achieve these goals, the present invention is by the following technical solutions:
An integrated optical power shunt preparation method who can customize splitting ratio, comprises the following steps:
Step 1, makes substrate layer, selects the quartzy making material as substrate layer, and polishing is carried out in the surface of substrate layer;
Step 2, makes under-clad layer, and the low pure material of selective refraction rate is as the making material of under-clad layer, and at the upper surface of substrate layer, by CVD method deposition, making thickness is the under-clad layer of 16-30 micron;
Step 3, makes sandwich layer, and the high dopant material of selective refraction rate is as the making material of sandwich layer, and at the upper surface of under-clad layer, by CVD method deposition, making thickness is the sandwich layer of 6 microns;
Step 4, makes y-shaped waveguide light path, by photoetching and etching technics, sandwich layer is processed, and it is the y-shaped waveguide light path of 6 * 6 microns that sandwich layer is processed into cross section;
Step 5, make top covering, select the dopant material identical with under-clad layer refractive index as the making material of top covering, at the upper surface of under-clad layer and the upper surface of y-shaped waveguide light path, by CVD method deposition, making thickness is the top covering of 16-30 micron, makes y-shaped waveguide light path except input end and output terminal, all be sealed between top covering and under-clad layer;
Step 6, make waveguide groove, in the top covering of the tapered bifurcated section of drawing of y-shaped waveguide light path one side, waveguide groove is set, the bottom land of waveguide groove drops on the upper surface of under-clad layer or drops in under-clad layer, the opening of waveguide groove is on the upper surface of top covering, and waveguide groove distance Y shape waveguide light path 0.4-2.3 micron, the width of waveguide groove is 8 microns, the length of waveguide groove will be set according to the tapered bifurcated segment length of drawing of y-shaped waveguide light path, and one end of waveguide groove will surpass at the bottom of the cone draw tapered bifurcated section 30 microns, the other end of waveguide groove with draw the cone point of tapered bifurcated section parallel,
Step 7, injects and solidifies assistant waveguide material, and the assistant waveguide material that selective refraction rate meets splitting ratio designing requirement is injected in waveguide groove, and allows assistant waveguide material solidify in waveguide groove, forms assistant waveguide piece;
Step 8, encapsulation, pastes cover plate by encapsulation technology and encapsulates.
This programme is found after using by test, light beam signal is from the input end input of y-shaped waveguide light path, the residue light signal of this light signal after device total losses is not distributed equally, this light signal is just drawing coupled zone and the assistant waveguide piece of tapered bifurcated section to be coupled, the result of coupling is, this bundle light signal more a part of light signal directed in the right branch light path of y-shaped waveguide light path, only less than 1/2nd residue torrent of light in left branch light path.Namely near the right branch light path of this side of assistant waveguide piece, assign to more light signal, away from the left branch light path of that side of assistant waveguide piece, assigned to less light signal.Realized during fabrication and can need to manufacture according to the splitting ratio of designed, designed, and good stability, to make simply, cost is low.
As preferably, the making material of described under-clad layer is selected pure silicon dioxide film, the high deped silicon dioxide film of making material selective refraction rate of described sandwich layer, the making material of described top covering is selected deped silicon dioxide film, described assistant waveguide material is selected macromolecular material, the making material selection simple glass material of described subsides cover plate.
As preferably, higher or lower than the waveguide groove madial wall of y-shaped waveguide light path, to this lateral buckling of y-shaped waveguide light path, the waveguide groove madial wall contour with y-shaped waveguide light path thickness is parallel with y-shaped waveguide light path lateral wall.
An integrated optical power shunt that can customize splitting ratio, comprises, substrate layer, under-clad layer, sandwich layer, top covering and subsides cover plate adopt quartz material substrate layer, and polishing is carried out in the surface of substrate layer, at the upper surface of substrate layer, adopt the low pure material of refractive index, by CVD method deposition, making thickness is the under-clad layer of 16-30 micron, at the upper surface of under-clad layer, adopt the high dopant material of refractive index, by CVD method deposition making thickness, be the sandwich layer of 6 microns, adopt photoetching and etching technics to process sandwich layer, it is the y-shaped waveguide light path of 6 * 6 microns that sandwich layer is processed into cross section, adopt the dopant material identical with under-clad layer refractive index, at the upper surface of under-clad layer and the upper surface of y-shaped waveguide light path, by CVD method deposition, making thickness is the top covering of 16-30 micron, makes y-shaped waveguide light path except input end and output terminal, all be sealed between top covering and under-clad layer, in the top covering of the tapered bifurcated section of drawing of y-shaped waveguide light path one side, waveguide groove is set, the bottom land of waveguide groove drops on the upper surface of under-clad layer or drops in under-clad layer, the opening of waveguide groove is on the upper surface of top covering, and waveguide groove distance Y shape waveguide light path 0.4-2.3 micron, the width of waveguide groove is 8 microns, the length of waveguide groove will be set according to the tapered bifurcated segment length of drawing of y-shaped waveguide light path, and one end of waveguide groove will surpass at the bottom of the cone draw tapered bifurcated section 30 microns, the other end of waveguide groove with draw the cone point of tapered bifurcated section parallel, the assistant waveguide material that selective refraction rate meets splitting ratio designing requirement is injected in waveguide groove, and allows assistant waveguide material solidify in waveguide groove, forms assistant waveguide piece, by encapsulation technology, pasting cover plate encapsulates.
As preferably, the making material of described under-clad layer is selected pure silicon dioxide film, the high deped silicon dioxide film of making material selective refraction rate of described sandwich layer, the making material of described top covering is selected deped silicon dioxide film, described assistant waveguide material is selected macromolecular material, the making material selection simple glass material of described subsides cover plate.
As preferably, to this lateral buckling of y-shaped waveguide light path, parallel with y-shaped waveguide light path lateral wall at the waveguide groove madial wall of sustained height section with y-shaped waveguide light path thickness higher or lower than the waveguide groove madial wall of y-shaped waveguide light path.
The present invention can reach following effect:
1, this shunt and preparation method thereof, can need to manufacture according to the splitting ratio of designed, designed during fabrication, and reliability good stability, manufactures simple and conveniently, and cost is low.
2, this shunt and preparation method thereof, y-shaped waveguide light path the tapered bifurcated section of drawing light signal coupled zone is set, and in coupled zone, be provided with additional assistant waveguide, the waveguide groove of coupled zone is arranged on a side of total branch-waveguide of y-shaped waveguide light path, by inject the assistant waveguide material means of different refractivity in waveguide groove, change the equivalent refractive index of light signal in coupled zone and distribute, self-defined when designing for manufacturing of the splitting ratio of finally realizing optical power divider.
Accompanying drawing explanation
Fig. 1 is that under-clad layer deposition of the present invention is produced on a kind of structural representation on substrate layer.
Fig. 2 be the present invention on the basis of Fig. 1, sandwich layer deposition is produced on a kind of structural representation on under-clad layer.
Fig. 3 be the present invention on the basis of Fig. 2, adopt photoetching and etching technics that sandwich layer is processed into a kind of structural representation after y-shaped waveguide light path.
Fig. 4 be the present invention on the basis of Fig. 3, on the upper surface of under-clad layer and the upper surface of y-shaped waveguide light path, deposition is made a kind of structural representation after top covering.
Fig. 5 be the present invention on the basis of Fig. 4, in y-shaped waveguide light path is drawn the top covering of tapered bifurcated section one side, waveguide groove is set, and assistant waveguide material cured in waveguide groove, form a kind of structural representation after assistant waveguide piece.
Fig. 6 is a kind of oblique plan structure schematic diagram that the present invention watches from light signal input end.
Fig. 7 is a kind of structural representation of facing that the present invention watches from light signal input end.
Fig. 8 is a kind of oblique plan structure schematic diagram that the present invention watches from light signal output end.
Fig. 9 is a kind of plan structure schematic diagram of the curing assistant waveguide piece of the present invention and y-shaped waveguide light path pitch arrangement.
Figure 10 is a kind of hierarchical structure schematic diagram of the curing assistant waveguide piece of the present invention while there is no bending segment.
Figure 11 is a kind of hierarchical structure schematic diagram of the curing assistant waveguide piece upper end of the present invention while having bending segment.
Figure 12 is a kind of hierarchical structure schematic diagram of the curing assistant waveguide piece upper and lower side of the present invention while having bending segment.
In figure: substrate layer 1, under-clad layer 2, sandwich layer 3, y-shaped waveguide light path 4, top covering 5, assistant waveguide piece 6, input end 7, right branch light path 8, right branch light path output terminal 9, left branch light path 10, left branch light path output terminal 11, draws tapered bifurcated section 12, the cone end 13, second segment assistant waveguide piece 14, cone point 16, first paragraph assistant waveguide piece 15, coupled zone 17, epimere assistant waveguide piece 18, stage casing assistant waveguide piece 19, hypomere assistant waveguide piece 20, waveguide groove 21.
Embodiment
Below by embodiment, and by reference to the accompanying drawings, technical scheme of the present invention is described in further detail.
Embodiment: a kind of integrated optical power shunt that can customize splitting ratio and preparation method thereof, its step is as follows:
Step 1, shown in Figure 1, make substrate layer 1, select the quartzy making material as substrate layer, and polishing is carried out in the surface of substrate layer.Can select according to equipment the size of substrate layer, such as silicon chip have 4 cun, six cun with eight cun etc. different size.
Step 2, shown in Figure 1, make under-clad layer 2, the low pure silicon dioxide membraneous material of selective refraction rate is as the making material of under-clad layer, and at the upper surface of substrate layer, by CVD method deposition, making thickness is the under-clad layer of 16 microns.The thickness of under-clad layer is greater than more than 10 microns, if under-clad layer thickness is too thin, when flashlight is coupled in coupled zone, y-shaped waveguide light path draws the flashlight in tapered bifurcated section easily to pass under-clad layer, larger to light signal loss, therefore, the thickness of under-clad layer is greater than more than 10 microns, to guarantee that device performance is not subject to the impact of substrate layer refractive index.But the thickness of under-clad layer also should not be too thick, and the thickness of under-clad layer is no more than 30 millimeters and is advisable, under-clad layer is too thick not only increases the cost of making material, produce waste, also make the component size made larger, cause using inconvenience, also increase the cost of making material.
Step 3, shown in Figure 2, make sandwich layer 3, the high deped silicon dioxide film material of selective refraction rate is as the making material of sandwich layer, and at the upper surface of under-clad layer, by CVD method deposition, making thickness is the sandwich layer of 6 microns.Because single-mode fiber core size is generally being less than 10 microns, so core layer thickness is made to 6 microns, be can mate with optical fiber, reduce coupling loss as far as possible.The thickness of sandwich layer is also unsuitable blocked up, and the blocked up degree of coupling that causes can variation.Shown in Fig. 9, Figure 10, due to thick sandwich layer, make the y-shaped waveguide light path of sandwich layer coupled zone draw tapered bifurcated section xsect larger, distance is between left and right larger, restriction due to distance, be located at coupled zone one side assistant waveguide piece and just can not carry out effectively coupling attraction to the light signal of coupled zone opposite side, and then affect the effect of the self-defined splitting ratio of light signal.
Step 4, shown in Figure 3, make y-shaped waveguide light path 4, by photoetching and etching technics, sandwich layer to be processed, it is the y-shaped waveguide light path of 6 * 6 microns that sandwich layer is processed into cross section.It is the facing of 6 * 6 microns that y-shaped waveguide light path is made to cross section, and the degree of coupling of coupled zone is better like this.
Step 5, shown in Figure 4, make top covering 5, select the deped silicon dioxide film material identical with under-clad layer refractive index as the making material of top covering, at the upper surface of under-clad layer and the upper surface of y-shaped waveguide light path, by CVD method deposition making thickness, be the top covering of 16 microns, y-shaped waveguide light path is all sealed between top covering and under-clad layer except input end and output terminal.Top covering role is identical with under-clad layer role, the thickness of top covering is greater than more than 10 microns, if top covering thickness is too thin, when flashlight is coupled in coupled zone, y-shaped waveguide light path draws the flashlight in tapered bifurcated section easily to pass top covering, larger to light signal loss, therefore, the thickness of top covering is greater than more than 10 microns.But the thickness of top covering is also gone up easily too thick, the thickness of top covering is no more than 30 millimeters and is advisable, and top covering is too thick not only increases the cost of making material, produce waste, also make the component size made larger, cause using inconvenience, also increase the cost of making material.Top covering and under-clad layer not only can be protected assistant waveguide piece, and top covering and under-clad layer can also be protected y-shaped waveguide light path.Top covering is the silica membrane of doping, and the doping of top covering inside has mobility with respect to under-clad layer, and under-clad layer can not flow, and the refraction coupling effect of light signal is better.
Step 6, referring to Fig. 5, Fig. 9, shown in Figure 12, make waveguide groove 21, in the top covering of the tapered bifurcated section of drawing of y-shaped waveguide light path one side, waveguide groove is set, specifically top covering is carried out to ICP etching, the waveguide groove figure of design is transferred to the same layer height of sandwich layer, the final waveguide groove that forms, the bottom land of its waveguide groove drops on the upper surface of under-clad layer or drops in under-clad layer, the opening of waveguide groove is on the upper surface of top covering, and 0.4 micron of waveguide groove distance Y shape waveguide light path, the width of waveguide groove is 8 microns, the length of waveguide groove will be set according to tapered bifurcated section 12 length of drawing of y-shaped waveguide light path, and one end of waveguide groove will surpass at the bottom of the cone draw tapered bifurcated section 30 microns, the other end of waveguide groove with draw the cone point of tapered bifurcated section parallel.
The position and the shape size that have just determined assistant waveguide piece due to position and the shape of waveguide groove, and the position of assistant waveguide piece and shape can determine the degree of coupling size of light signal, degree of coupling size can affect the effect of the self-defined splitting ratio of light signal.First need to be in reticle in technique design simulation waveguide groove figure, by photoetching, simulation waveguide groove pattern is transferred on top plate or lower plywood.
If the position of waveguide groove from the distance of y-shaped waveguide light path too little be unsuitable for making, spacing distance is large also can cause the degree of coupling poor, the position of waveguide groove from the distance of y-shaped waveguide light path the degree of coupling 0.4 micron time effective.
8 microns of the width of waveguide groove are most suitable.Because the assistant waveguide piece surpassing in 8 microns of waveguide groove far away can be reduced to rapidly minimum with the degree of coupling of light signal, even not coupling, so the width of waveguide groove just there is no need over 8 microns, waste seems, also take up room, consumable material, improves cost of manufacture.
The length of waveguide groove will be set according to tapered bifurcated section 12 length of drawing of y-shaped waveguide light path.For the transmitting optical signal of different wave length, its y-shaped waveguide light path to draw tapered bifurcated segment length be different, the degree of coupling is also subject to the impact of coupled zone 17 length of the tapered bifurcated section of drawing of y-shaped waveguide light path.The longer coupling effect in coupled zone is better, on the contrary coupling effect variation.The coupled zone length of the present embodiment is 350 microns.
Shown in Figure 9, one end of waveguide groove 21 will surpass at the bottom of the cone draw tapered bifurcated section 30 microns, and namely the second segment assistant waveguide piece 14 of assistant waveguide piece 6 surpasses at the bottom of the cone that draws tapered bifurcated section 13 and wants 30 microns, and coupling effect is best like this.The other end of waveguide groove is generally no more than the cone point 16 that draws tapered bifurcated section, at most with draw the cone point of tapered bifurcated section parallel.Namely the first paragraph assistant waveguide piece 15 of assistant waveguide piece 6 is generally no more than the cone point 16 that draws tapered bifurcated section, at most with draw the cone point of tapered bifurcated section parallel, coupling effect is best like this.
As shown in figure 10, waveguide groove can be set as straight wall straight up towards the waveguide groove madial wall of this side of y-shaped waveguide light path, thereby the cross section of assistant waveguide piece 6 is formed by one section, and this section straight up.This structure is convenient to processing and fabricating.
As shown in figure 11, waveguide groove is comprised of epimere sidewall and stage casing sidewall towards the waveguide groove madial wall of this side of y-shaped waveguide light path, and stage casing sidewall is parallel with y-shaped waveguide light path lateral wall, and epimere sidewall is to this lateral buckling of y-shaped waveguide light path.Thereby the cross section of assistant waveguide piece 6 is comprised of stage casing assistant waveguide piece 19 and epimere assistant waveguide piece 18, and stage casing assistant waveguide piece is parallel with y-shaped waveguide light path lateral wall, epimere assistant waveguide piece is to this lateral buckling of y-shaped waveguide light path.The assistant waveguide piece of design can make light signal coupling greatly like this, and effect is better, and the self-defined splitting ratio effect of light signal is better.
As shown in figure 12, waveguide groove is comprised of epimere sidewall, stage casing sidewall and hypomere sidewall towards the waveguide groove madial wall of this side of y-shaped waveguide light path, and stage casing sidewall is parallel with y-shaped waveguide light path lateral wall, epimere sidewall is to this lateral buckling of y-shaped waveguide light path, and hypomere sidewall is also to this lateral buckling of y-shaped waveguide light path.Namely higher or lower than the waveguide groove madial wall of y-shaped waveguide light path to this lateral buckling of y-shaped waveguide light path, the waveguide groove madial wall contour with y-shaped waveguide light path thickness is parallel with y-shaped waveguide light path lateral wall.This structure makes the cross section of assistant waveguide piece 6 be comprised of hypomere assistant waveguide piece 20, stage casing assistant waveguide piece 19 and epimere assistant waveguide piece 18, and stage casing assistant waveguide piece is parallel with y-shaped waveguide light path lateral wall, epimere assistant waveguide piece is to this lateral buckling of y-shaped waveguide light path, and hypomere assistant waveguide piece is also to this lateral buckling of y-shaped waveguide light path.The assistant waveguide piece of design can farthest make light signal coupling like this, and its coupling effect is better, and the self-defined splitting ratio effect of light signal is better.
Step 7, shown in Figure 5, inject and solidify assistant waveguide material, selective refraction rate meets the macromolecular material of splitting ratio designing requirement as assistant waveguide material, and macromolecular material is injected in waveguide groove, and allow the macromolecular material of assistant waveguide solidify in waveguide groove, form assistant waveguide piece 6.The refractive index of macromolecular material (if UV glue is exactly a kind of macromolecular material, it has certain refractive index) is easy to configuration, and the refractive index size of macromolecular material is calculated according to design splitting ratio.The distance of drawing tapered bifurcated section coupled zone of assistant waveguide piece and y-shaped waveguide light path changes between 0.4-2.3 μ m, and the refractive index of assistant waveguide material changes between 1.451-1.471.According to analog result, by selecting different distances and refractive index parameter, can be so that the Yi Ge branch light path output intensity of close assistant waveguide piece one side of y-shaped waveguide light path changes between 0.03-0.82 candela, and between 0.06-0.72, changing (supposing that input optical signal energy is 1 candela) away from another branch's light path output intensity of assistant waveguide piece one side, device overall loss is less than 10%.Adopt macromolecular material to make refractive index and meet splitting ratio assistant waveguide piece, cheap, technique is simple, is easy to make.
Step 8, encapsulation, pastes cover plate by encapsulation technology and encapsulates, and pastes the making material selection simple glass material of cover plate.The mechanical property of encapsulated device and environmental stability are good.Simple glass material is easy to obtain, and cheap, and then reduces cost of manufacture.
Because the left branch light path of y-shaped waveguide light path and the splitting ratio of right branch light path are generally the same, all that the residue light signal after device total losses is distributed equally, remain light signal and have 1/2nd and flow in left branch light path, have 1/2nd and flow in right branch light path.
We are used rear discovery by test the present embodiment, shown in Fig. 6, Fig. 9, in the situation that the light signal overall loss of device equals 0.08 candela, the light signal that a beam energy is 1 candela is inputted from the input end 7 of y-shaped waveguide light path 4, and this light signal is just drawing coupled zone and the assistant waveguide piece 6 of tapered bifurcated section 12 to be coupled.The result of its coupling is: have the light signal of 0.73 candela to flow in the right branch light path 8 of y-shaped waveguide light path, only have 0.19 candela light signal to flow in left branch light path 10.Namely near the right branch light path of this side of assistant waveguide piece, assigned to more light signal, right branch light path should be got the light signal of 0.46 candela, but gets the light signal of 0.73 candela, has obtained the light signal of 0.27 candela more; And assigned to less light signal away from the left branch light path of that side of assistant waveguide piece, left branch light path also should be got the light signal of 0.46 candela originally, but only got 0.19 candela light signal, can did without the light signal of 0.27 candela.The right branch light path 0.27 candela light signals that obtain are just the 0.27 candela light signals that left branch light path obtains less more.The reason that occurs this result is learnt by analysis afterwards, be exactly the result being coupled by light signal and assistant waveguide piece near the left branch light path of this side of assistant waveguide piece, we the assistant waveguide piece that designs and produces in the tapered bifurcated section of drawing of y-shaped waveguide light path have better effects to the change of the splitting ratio of light signal this presentation of results.Therefore, we can need to carry out the self-defined of light signal and manufacture according to the splitting ratio of designed, designed, and the effect of splitting ratio be better when manufacturing integration optical power divider, and stability is high, makes simply, and cost is low.
In use, shown in Fig. 6, Fig. 7, Fig. 8, far-end need to increase light signal strength, just that optical fiber of long transmission distance is linked near on the right branch light path output terminal 9 of this side of assistant waveguide piece.And near-end does not need to increase light signal strength, just that near optical fiber of transmission range is linked on the left branch light path output terminal 11 away from this side of assistant waveguide piece.
By light beam signal, not to be distributed equally into two ways of optical signals, increased the dirigibility that optical power divider uses.Make as far as possible original enough light beam signals not waste, and then the sexual valence that seems is also higher.
Described by reference to the accompanying drawings embodiments of the present invention above, but not limited by above-described embodiment while realizing, those of ordinary skills can make a variety of changes within the scope of the appended claims or revise.

Claims (6)

1. an integrated optical power shunt preparation method who can customize splitting ratio, is characterized in that, comprises the following steps:
Step 1, makes substrate layer (1), selects the quartzy making material as substrate layer, and polishing is carried out in the surface of substrate layer;
Step 2, makes under-clad layer (2), and the low pure material of selective refraction rate is as the making material of under-clad layer, and at the upper surface of substrate layer, by CVD method deposition, making thickness is the under-clad layer of 16-30 micron;
Step 3, makes sandwich layer (3), and the high dopant material of selective refraction rate is as the making material of sandwich layer, and at the upper surface of under-clad layer, by CVD method deposition, making thickness is the sandwich layer of 6 microns;
Step 4, makes y-shaped waveguide light path (4), by photoetching and etching technics, sandwich layer is processed, and it is the y-shaped waveguide light path of 6 * 6 microns that sandwich layer is processed into cross section;
Step 5, make top covering (5), select the dopant material identical with under-clad layer refractive index as the making material of top covering, at the upper surface of under-clad layer and the upper surface of y-shaped waveguide light path, by CVD method deposition, making thickness is the top covering of 16-30 micron, makes y-shaped waveguide light path except input end and output terminal, all be sealed between top covering and under-clad layer;
Step 6, make waveguide groove (21), in the top covering of the tapered bifurcated section of drawing of y-shaped waveguide light path one side, waveguide groove is set, the bottom land of waveguide groove drops on the upper surface of under-clad layer or drops in under-clad layer, the opening of waveguide groove is on the upper surface of top covering, and waveguide groove distance Y shape waveguide light path 0.4-2.3 micron, the width of waveguide groove is 8 microns, the length of waveguide groove will be set according to the tapered bifurcated section of drawing of y-shaped waveguide light path (12) length, and one end of waveguide groove will surpass at the bottom of the cone draw tapered bifurcated section 30 microns, the other end of waveguide groove with draw the cone point of tapered bifurcated section parallel,
Step 7, injects and solidifies assistant waveguide material, and the assistant waveguide material that selective refraction rate meets splitting ratio designing requirement is injected in waveguide groove, and allows assistant waveguide material solidify in waveguide groove, forms assistant waveguide piece (6);
Step 8, encapsulation, pastes cover plate by encapsulation technology and encapsulates.
2. a kind of integrated optical power shunt preparation method who can customize splitting ratio according to claim 1, it is characterized in that, the making material of described under-clad layer is selected pure silicon dioxide film, the high deped silicon dioxide film of making material selective refraction rate of described sandwich layer, the making material of described top covering is selected deped silicon dioxide film, described assistant waveguide material is selected macromolecular material, the making material selection simple glass material of described subsides cover plate.
3. a kind of integrated optical power shunt preparation method who can customize splitting ratio according to claim 1, it is characterized in that, higher or lower than the waveguide groove madial wall of y-shaped waveguide light path, to this lateral buckling of y-shaped waveguide light path, the waveguide groove madial wall contour with y-shaped waveguide light path thickness is parallel with y-shaped waveguide light path lateral wall.
4. an integrated optical power shunt that can customize splitting ratio, is characterized in that, comprises that substrate layer, under-clad layer, sandwich layer, top covering and subsides cover plate adopt quartz material substrate layer, and polishing is carried out in the surface of substrate layer, at the upper surface of substrate layer, adopt the low pure material of refractive index, by CVD method deposition, making thickness is the under-clad layer of 16-30 micron, at the upper surface of under-clad layer, adopt the high dopant material of refractive index, by CVD method deposition making thickness, be the sandwich layer of 6 microns, adopt photoetching and etching technics to process sandwich layer, it is the y-shaped waveguide light path of 6 * 6 microns that sandwich layer is processed into cross section, adopt the dopant material identical with under-clad layer refractive index, at the upper surface of under-clad layer and the upper surface of y-shaped waveguide light path, by CVD method deposition, making thickness is the top covering of 16-30 micron, makes y-shaped waveguide light path except input end and output terminal, all be sealed between top covering and under-clad layer, in the top covering of the tapered bifurcated section of drawing of y-shaped waveguide light path one side, waveguide groove is set, the bottom land of waveguide groove drops on the upper surface of under-clad layer or drops in under-clad layer, the opening of waveguide groove is on the upper surface of top covering, and waveguide groove distance Y shape waveguide light path 0.4-2.3 micron, the width of waveguide groove is 8 microns, the length of waveguide groove will be set according to the tapered bifurcated segment length of drawing of y-shaped waveguide light path, and one end of waveguide groove will surpass at the bottom of the cone draw tapered bifurcated section 30 microns, the other end of waveguide groove with draw the cone point of tapered bifurcated section parallel, the assistant waveguide material that selective refraction rate meets splitting ratio designing requirement is injected in waveguide groove, and allows assistant waveguide material solidify in waveguide groove, by encapsulation technology, pasting cover plate encapsulates.
5. a kind of integrated optical power shunt that can customize splitting ratio according to claim 4, it is characterized in that, the making material of described under-clad layer is selected pure silicon dioxide film, the high deped silicon dioxide film of making material selective refraction rate of described sandwich layer, the making material of described top covering is selected deped silicon dioxide film, described assistant waveguide material is selected macromolecular material, the making material selection simple glass material of described subsides cover plate.
6. a kind of integrated optical power shunt that can customize splitting ratio according to claim 4, it is characterized in that, to this lateral buckling of y-shaped waveguide light path, parallel with y-shaped waveguide light path lateral wall at the waveguide groove madial wall of sustained height section with y-shaped waveguide light path thickness higher or lower than the waveguide groove madial wall of y-shaped waveguide light path.
CN201310192081.5A 2013-05-21 2013-05-21 It is a kind of to can customize integrated optical power shunt of splitting ratio and preparation method thereof Expired - Fee Related CN103630969B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310192081.5A CN103630969B (en) 2013-05-21 2013-05-21 It is a kind of to can customize integrated optical power shunt of splitting ratio and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310192081.5A CN103630969B (en) 2013-05-21 2013-05-21 It is a kind of to can customize integrated optical power shunt of splitting ratio and preparation method thereof

Publications (2)

Publication Number Publication Date
CN103630969A true CN103630969A (en) 2014-03-12
CN103630969B CN103630969B (en) 2017-05-31

Family

ID=50212210

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310192081.5A Expired - Fee Related CN103630969B (en) 2013-05-21 2013-05-21 It is a kind of to can customize integrated optical power shunt of splitting ratio and preparation method thereof

Country Status (1)

Country Link
CN (1) CN103630969B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105116491A (en) * 2015-09-22 2015-12-02 东南大学 Silicon-based groove waveguide integrated type optical power splitter
CN106125198A (en) * 2014-02-21 2016-11-16 杭州天野通信设备有限公司 For full communication wave band being carried out light shunt structure and the preparation method of light splitting optimization
CN115061237A (en) * 2022-06-30 2022-09-16 华中科技大学 Reconfigurable power splitter based on phase change material and power splitting ratio adjusting method
WO2023036104A1 (en) * 2021-09-10 2023-03-16 中兴通讯股份有限公司 Optical connector and manufacturing method

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1713008A (en) * 2005-07-05 2005-12-28 奥普为光子科技(无锡)有限公司 Adjustable waveguide optical attenuator of planar light and production thereof
US20060165340A1 (en) * 2005-01-26 2006-07-27 Seikoh Giken Co., Ltd. Thermo-optic waveguide device and manufacturing method thereof
CN1963577A (en) * 2005-11-10 2007-05-16 日本碍子株式会社 Optical waveguide devices
JP2007256510A (en) * 2006-03-22 2007-10-04 Furukawa Electric Co Ltd:The Waveguide type polarization separator/multiplexer
CN202306053U (en) * 2011-11-09 2012-07-04 孙其琴 Optical attenuator capable of being modulated
CN203287558U (en) * 2013-05-21 2013-11-13 杭州天野通信设备有限公司 Integrated optical power splitter capable of customizing splitting ratio

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060165340A1 (en) * 2005-01-26 2006-07-27 Seikoh Giken Co., Ltd. Thermo-optic waveguide device and manufacturing method thereof
CN1713008A (en) * 2005-07-05 2005-12-28 奥普为光子科技(无锡)有限公司 Adjustable waveguide optical attenuator of planar light and production thereof
CN1963577A (en) * 2005-11-10 2007-05-16 日本碍子株式会社 Optical waveguide devices
JP2007256510A (en) * 2006-03-22 2007-10-04 Furukawa Electric Co Ltd:The Waveguide type polarization separator/multiplexer
CN202306053U (en) * 2011-11-09 2012-07-04 孙其琴 Optical attenuator capable of being modulated
CN203287558U (en) * 2013-05-21 2013-11-13 杭州天野通信设备有限公司 Integrated optical power splitter capable of customizing splitting ratio

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106125198A (en) * 2014-02-21 2016-11-16 杭州天野通信设备有限公司 For full communication wave band being carried out light shunt structure and the preparation method of light splitting optimization
CN105116491A (en) * 2015-09-22 2015-12-02 东南大学 Silicon-based groove waveguide integrated type optical power splitter
CN105116491B (en) * 2015-09-22 2018-04-24 东南大学 A kind of silicon substrate groove waveguides integrated-type optical power distributor
WO2023036104A1 (en) * 2021-09-10 2023-03-16 中兴通讯股份有限公司 Optical connector and manufacturing method
CN115061237A (en) * 2022-06-30 2022-09-16 华中科技大学 Reconfigurable power splitter based on phase change material and power splitting ratio adjusting method
CN115061237B (en) * 2022-06-30 2024-02-06 华中科技大学 Reconfigurable power branching device based on phase change material and power branching ratio adjusting method

Also Published As

Publication number Publication date
CN103630969B (en) 2017-05-31

Similar Documents

Publication Publication Date Title
CN108132499B (en) Silicon waveguide mode spot converter based on multilayer polymer structure and preparation method thereof
CN105829933B (en) Wave-guide polarization separation and polarization converter
CN103837937B (en) Prism-grating waveguide bonder and light guides
CN203287558U (en) Integrated optical power splitter capable of customizing splitting ratio
CN105607185B (en) Improve the structure of sub-micron silicon waveguide and general single mode fiber coupling efficiency
CN103513333B (en) A kind of silica-based nanowire mixing right-angled intersection device
CN109143466A (en) A kind of hybrid integrated silicon optical chip, optical device and chip manufacture method
CN103630969A (en) Integrated optical power divider capable of customizing splitting ratio, and manufacturing method thereof
CN209417341U (en) A kind of waveguide surface coupling spot-size converter
CN104459890A (en) Optical fiber and silicon waveguide coupling structure based on polymer waveguides and manufacturing method thereof
CN109613632A (en) Tunable cavity and preparation method thereof based on flexible surface phasmon coupler
CN113640913A (en) LNOI-based spot-size converter directly coupled with single-mode fiber
CN207780304U (en) Effectively high coupling ratios Optical Waveguide Modes spot conversion equipment
CN112285829A (en) Silicon-based light spot mode field converter and manufacturing process thereof
CN202103312U (en) Deep sub-wavelength surface plasmon micro-cavity laser
CN213517647U (en) Silicon-based light spot mode field converter
CN103981508A (en) Silicon oxynitride gradient anti-reflection thin film and preparation process thereof
CN103336332B (en) Three-wavelength-division multiplexer/demultiplexer and production method thereof
CN103760690B (en) A kind of adjustable PLC type optical power distributor of merit proportion by subtraction and preparation method and control method
CN105759351A (en) Silica-based groove waveguide polarizer based on vertical coupling principle
CN203311029U (en) An integrated device which realizes light polarization splitting and rotation
CN113126217A (en) Optical transmitter-receiver device, preparation method of optical transmitter-receiver device and optical communication equipment
CN203275706U (en) Tri-wavelength division multiplexing/demultiplexing device
CN111538119B (en) Preparation method of three-dimensional photoelectric interconnection substrate
CN103558660A (en) Integrated device for realizing light polarization beam splitting and rotation

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20170531

Termination date: 20180521