CN107385415B - 挡板和喷头组件及相应的制造方法 - Google Patents

挡板和喷头组件及相应的制造方法 Download PDF

Info

Publication number
CN107385415B
CN107385415B CN201710239093.7A CN201710239093A CN107385415B CN 107385415 B CN107385415 B CN 107385415B CN 201710239093 A CN201710239093 A CN 201710239093A CN 107385415 B CN107385415 B CN 107385415B
Authority
CN
China
Prior art keywords
ring
baffle
showerhead
support members
assembly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201710239093.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN107385415A (zh
Inventor
埃里克·拉塞尔·马德森
兰斯·迪尔达尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Priority to CN202110947160.7A priority Critical patent/CN113862642B/zh
Publication of CN107385415A publication Critical patent/CN107385415A/zh
Application granted granted Critical
Publication of CN107385415B publication Critical patent/CN107385415B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7606—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/12—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating the heat being generated by friction; Friction welding
    • B23K20/122—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating the heat being generated by friction; Friction welding using a non-consumable tool, e.g. friction stir welding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/12—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating the heat being generated by friction; Friction welding
    • B23K20/122—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating the heat being generated by friction; Friction welding using a non-consumable tool, e.g. friction stir welding
    • B23K20/127—Friction stir welding involving a mechanical connection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/327—Arrangements for generating the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
CN201710239093.7A 2016-04-13 2017-04-13 挡板和喷头组件及相应的制造方法 Active CN107385415B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110947160.7A CN113862642B (zh) 2016-04-13 2017-04-13 挡板和喷头组件及相应的制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/097,600 US10483092B2 (en) 2016-04-13 2016-04-13 Baffle plate and showerhead assemblies and corresponding manufacturing method
US15/097,600 2016-04-13

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202110947160.7A Division CN113862642B (zh) 2016-04-13 2017-04-13 挡板和喷头组件及相应的制造方法

Publications (2)

Publication Number Publication Date
CN107385415A CN107385415A (zh) 2017-11-24
CN107385415B true CN107385415B (zh) 2021-09-07

Family

ID=60039549

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201710239093.7A Active CN107385415B (zh) 2016-04-13 2017-04-13 挡板和喷头组件及相应的制造方法
CN202110947160.7A Active CN113862642B (zh) 2016-04-13 2017-04-13 挡板和喷头组件及相应的制造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202110947160.7A Active CN113862642B (zh) 2016-04-13 2017-04-13 挡板和喷头组件及相应的制造方法

Country Status (5)

Country Link
US (1) US10483092B2 (cg-RX-API-DMAC7.html)
JP (1) JP6909034B2 (cg-RX-API-DMAC7.html)
KR (1) KR102055040B1 (cg-RX-API-DMAC7.html)
CN (2) CN107385415B (cg-RX-API-DMAC7.html)
TW (1) TWI654334B (cg-RX-API-DMAC7.html)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10741365B2 (en) * 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
US10266947B2 (en) * 2016-08-23 2019-04-23 Lam Research Corporation Rotary friction welded blank for PECVD heated showerhead
KR20200045785A (ko) * 2018-10-23 2020-05-06 안범모 반도체 제조 공정용 또는 디스플레이 제조 공정용 프로세스 유체가 통과하는 접합부품
GB201819455D0 (en) * 2018-11-29 2019-01-16 Johnson Matthey Plc Apparatus and method for coating substrates with washcoats
GB201819454D0 (en) 2018-11-29 2019-01-16 Johnson Matthey Plc Apparatus and method for coating substrates with washcoats
JP7224175B2 (ja) * 2018-12-26 2023-02-17 東京エレクトロン株式会社 成膜装置及び方法
TWI841699B (zh) * 2019-03-15 2024-05-11 美商蘭姆研究公司 半導體製造應用中的摩擦攪拌銲接
EP3987081A4 (en) * 2019-06-18 2023-07-05 Lam Research Corporation REDUCED DIAMETER SUPPORT RING MATERIAL FOR SUBSTRATE PROCESSING SYSTEMS
US12486574B2 (en) 2019-08-23 2025-12-02 Lam Research Corporation Thermally controlled chandelier showerhead
CN119980191A (zh) 2019-08-28 2025-05-13 朗姆研究公司 金属沉积
US12646688B2 (en) 2019-10-24 2026-06-02 Lam Research Corporation Showerhead for a semiconductor manufacturing system
CN115298350A (zh) * 2020-03-19 2022-11-04 朗姆研究公司 喷头清扫环
WO2021247627A1 (en) * 2020-06-03 2021-12-09 Lam Research Corporation Monobloc pedestal for efficient heat transfer
JP7680476B2 (ja) * 2020-06-23 2025-05-20 ラム リサーチ コーポレーション 自動シャワーヘッド傾斜調整
US12415229B2 (en) 2020-07-29 2025-09-16 Blue Origin Manufacturing, LLC Friction stir welding systems and methods
TWI912386B (zh) * 2020-10-09 2026-01-21 美商蘭姆研究公司 無面板噴淋頭及基板處理方法
USD1066275S1 (en) * 2022-04-04 2025-03-11 Applied Materials, Inc. Baffle for anti-rotation process kit for substrate processing chamber
TW202402387A (zh) * 2022-04-06 2024-01-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氣體遞送總成及包括氣體遞送總成之反應器系統
USD1107669S1 (en) * 2022-05-02 2025-12-30 Lam Research Corporation Processing chamber purge plate
CN115464459A (zh) * 2022-09-22 2022-12-13 重庆镪正科技有限公司 一种具有粉尘收集机构的智能碳滑板毛坯加工机
CN120188255A (zh) * 2022-10-25 2025-06-20 朗姆研究公司 用于衬底处理系统的喷头的杯状挡板
USD1076837S1 (en) * 2023-01-19 2025-05-27 Lam Research Corporation Baffle
US12172229B2 (en) * 2023-03-30 2024-12-24 Blue Origin, Llc Friction stir additive manufacturing devices and methods for forming in-situ rivets
US12140109B2 (en) 2023-03-30 2024-11-12 Blue Origin, Llc Transpiration-cooled systems having permeable and non-permeable portions
US12246392B2 (en) 2023-03-30 2025-03-11 Blue Origin Manufacturing, LLC Deposition head for friction stir additive manufacturing devices and methods
US12383975B2 (en) 2023-08-03 2025-08-12 Blue Origin Manufacturing, LLC Friction stir additive manufacturing formed parts and structures with integrated passages
US12303994B2 (en) 2023-08-03 2025-05-20 Blue Origin Manufacturing, LLC Friction stir additive manufacturing formed parts and structures with integrated passages
US20250187107A1 (en) 2023-12-12 2025-06-12 Blue Origin, Llc Spindles for friction stir additive manufacturing systems, devices, and methods
US12661713B2 (en) 2024-09-10 2026-06-23 Blue Origin Manufacturing, LLC Wire-feed friction stir additive manufacturing devices and methods

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1781608A (zh) * 2001-07-16 2006-06-07 三星电子株式会社 具有间隙控制器的晶片处理设备的喷头
CN1952786A (zh) * 2005-10-21 2007-04-25 Asml荷兰有限公司 气体喷头、光刻装置和气体喷头的应用

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2950063A (en) * 1953-12-21 1960-08-23 Jr Glenn Q Ripley Aerating shower head
US3831860A (en) * 1972-12-18 1974-08-27 Wrightway Mfg Co Low flow volume shower head
US5451435A (en) * 1990-06-18 1995-09-19 At&T Corp. Method for forming dielectric
US5397060A (en) * 1994-01-21 1995-03-14 Afa Products, Inc. Foam-spray-off trigger sprayer
US5549822A (en) * 1995-01-13 1996-08-27 Ferguson; George E. Shower filter apparatus
SG45121A1 (en) * 1995-10-28 1998-01-16 Inst Of Microelectronics Apparatus for dispensing fluid in an array pattern
JP2000077337A (ja) * 1998-08-31 2000-03-14 Toshiba Corp ガス処理装置およびガス処理方法
US6123775A (en) * 1999-06-30 2000-09-26 Lam Research Corporation Reaction chamber component having improved temperature uniformity
US6415736B1 (en) * 1999-06-30 2002-07-09 Lam Research Corporation Gas distribution apparatus for semiconductor processing
KR100406176B1 (ko) 2000-06-19 2003-11-19 주식회사 하이닉스반도체 샤워헤드 및 이를 이용한 액체 원료 공급 장치
KR20060089002A (ko) * 2005-02-03 2006-08-08 삼성전자주식회사 반도체 제조장치의 샤워헤드
JP4522980B2 (ja) 2005-11-15 2010-08-11 パナソニック株式会社 プラズマ処理装置及びプラズマ処理方法
US20070119370A1 (en) * 2005-11-04 2007-05-31 Paul Ma Apparatus and process for plasma-enhanced atomic layer deposition
US7476291B2 (en) * 2006-09-28 2009-01-13 Lam Research Corporation High chamber temperature process and chamber design for photo-resist stripping and post-metal etch passivation
US8673080B2 (en) * 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
CN103403843B (zh) * 2011-03-04 2016-12-14 诺发系统公司 混合型陶瓷喷淋头
JP5678116B2 (ja) * 2013-03-19 2015-02-25 東京エレクトロン株式会社 蓋部品、処理ガス拡散供給装置、及び基板処理装置
US9290843B2 (en) 2014-02-11 2016-03-22 Lam Research Corporation Ball screw showerhead module adjuster assembly for showerhead module of semiconductor substrate processing apparatus
US10741365B2 (en) * 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
US10378107B2 (en) * 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1781608A (zh) * 2001-07-16 2006-06-07 三星电子株式会社 具有间隙控制器的晶片处理设备的喷头
CN1952786A (zh) * 2005-10-21 2007-04-25 Asml荷兰有限公司 气体喷头、光刻装置和气体喷头的应用

Also Published As

Publication number Publication date
KR102055040B1 (ko) 2019-12-11
CN113862642B (zh) 2024-08-30
CN107385415A (zh) 2017-11-24
TW201802292A (zh) 2018-01-16
JP2017199898A (ja) 2017-11-02
US10483092B2 (en) 2019-11-19
TWI654334B (zh) 2019-03-21
JP6909034B2 (ja) 2021-07-28
US20170301515A1 (en) 2017-10-19
KR20170117333A (ko) 2017-10-23
CN113862642A (zh) 2021-12-31

Similar Documents

Publication Publication Date Title
CN113862642B (zh) 挡板和喷头组件及相应的制造方法
JP7395644B2 (ja) 基板処理システムにおける再循環を低減するためのカラー、円錐形シャワーヘッド、および／または、トッププレート
US10157755B2 (en) Purge and pumping structures arranged beneath substrate plane to reduce defects
KR20250053227A (ko) 개선된 프로세스 균일도를 갖는 기판 지지부
US10096471B2 (en) Partial net shape and partial near net shape silicon carbide chemical vapor deposition
KR20190112167A (ko) 아킹 (arcing) 을 감소시키기 위한 헬륨 플러그 설계
US12509772B2 (en) Split showerhead cooling plate
JP2025075100A (ja) プラズマチャンバを洗浄するための装置
US20180294197A1 (en) System design for in-line particle and contamination metrology for showerhead and electrode parts
TWI823977B (zh) 預防半導體基板處理中基座上的沉積
CN114008738B (zh) 用于衬底处理系统的缩小直径承载环硬件
US20170332480A1 (en) Laminated heater with different heater trace materials
TW202603830A (zh) 基板處理系統的噴淋頭用的二件式冷卻板
WO2024081183A1 (en) Baffle for providing uniform process gas flow on substrate and around pedestal
WO2026072558A2 (en) Plasma processing system with upper electrode, substrate support, and edge ring system with reduced etch non-uniformity and arcing
WO2024155500A1 (en) Baffle for providing uniform process gas flow on substrate and around pedestal

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant