CN107382295A - 一种集成电路衬底用绝缘陶瓷及其制备方法 - Google Patents

一种集成电路衬底用绝缘陶瓷及其制备方法 Download PDF

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CN107382295A
CN107382295A CN201710620237.3A CN201710620237A CN107382295A CN 107382295 A CN107382295 A CN 107382295A CN 201710620237 A CN201710620237 A CN 201710620237A CN 107382295 A CN107382295 A CN 107382295A
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李丹丹
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Hefei Tong Yu Electronic Technology Co Ltd
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Abstract

本发明公开了一种集成电路衬底用绝缘陶瓷，由以下按照重量份的原料组成：硅锌矿60‑80份、钛酸钡30‑40份、烧滑石20‑30份、钛白粉10‑30份、二氧化硅10‑20份、氮化硅5‑15份、石英粉3‑8份、云母粉5‑10份、碳化硼2‑8份、聚丙烯酸钠5‑10份、酚醛树脂8‑15份、氧化铝3‑8份、复合添加剂2‑6份、粘结剂1‑5份和去离子水100‑120份。本发明的集成电路衬底用绝缘陶瓷具有绝缘电阻值低、绝缘性能好、使用寿命长、生产成本低等优点，同时，本发明的制备方法通过严格控制工艺参数，可以控制绝缘陶瓷材料在烧结过程中的结构变化和化学变化，可以满足工业应用的要求。

Description

一种集成电路衬底用绝缘陶瓷及其制备方法
技术领域
本发明涉及集成电路技术领域，具体涉及一种集成电路衬底用绝缘陶瓷及其制备方法。
背景技术
陶瓷是以天然粘土以及各种天然矿物为主要原料经过粉碎混炼、成型和煅烧制得的材料的各种制品。以前人们把用陶土制作成的在专门的窑炉中高温烧制的物品称作陶瓷，陶瓷是陶器和瓷器的总称。陶瓷的传统概念是指所有以粘土等无机非金属矿物为原料的人工工业产品。它包括由粘土或含有粘土的混合物经混炼、成形、煅烧而制成的各种制品。由最粗糙的土器到最精细的精陶和瓷器都属于它的范围。现有的陶瓷种类很多，现己被广泛用于化工领域、电子领域等。其中氧化铝陶瓷和钛钡具有优异的物理化学性能，称为电学领域常用的材料之一。现有技术中氧化铝制备的绝缘电阻值低，绝缘性能不高，降低了产品的耐用性能。
发明内容
本发明的目的在于克服上述现有技术的不足，提供一种绝缘电阻值低、绝缘性能好、使用寿命长、生产成本低的集成电路衬底用绝缘陶瓷及其制备方法。
为了解决上述技术问题，本发明采用如下技术方案：
一种集成电路衬底用绝缘陶瓷，由以下按照重量份的原料组成：硅锌矿 60-80份、钛酸钡30-40份、烧滑石20-30份、钛白粉10-30份、二氧化硅10-20份、氮化硅5-15份、石英粉3-8份、云母粉5-10份、碳化硼2-8份、聚丙烯酸钠5-10份、酚醛树脂8-15份、氧化铝3-8份、复合添加剂2-6份、粘结剂1-5份和去离子水100-120份。
优选的，所述硅锌矿70份、钛酸钡35份、烧滑石25份、钛白粉20份、二氧化硅15份、氮化硅10份、石英粉5.5份、云母粉7.5份、碳化硼5份、聚丙烯酸钠7份、酚醛树脂12份、氧化铝5.5份、复合添加剂4份、粘结剂3份和去离子水110份。
优选的，所述复合添加剂为硼酸、氯化铵和氟化铝按照质量比为1:0.2-0.4:0.2-0.4的混合物。
优选的，所述粘结剂为石蜡或聚丙烯酸甲脂。
一种集成电路衬底用绝缘陶瓷的制备方法，包括以下步骤：
（1）按照配比称取硅锌矿、钛酸钡、烧滑石、钛白粉、二氧化硅、氮化硅、石英粉、云母粉、碳化硼、聚丙烯酸钠、酚醛树脂、氧化铝放入球磨机，充分球磨10-20h，得到混合粉料A；
（2）向混合粉料B中加入粘结剂和去离子水，混料后进行二次球磨，球磨均匀得到浆料B；
（3）将步骤（2）中浆料B在80-120℃下保温40-60min，然后加入复合添加剂球磨12-18h，得到浆料C，然后将浆料C注入模具中浇注成陶瓷坯片，将坯片干燥，然后装入箱式炉内，烧成，即得集成电路衬底用绝缘陶瓷。
优选的，所述步骤（1）中还包括：将球磨后的混合粉料过100-200目标准筛。
优选的，所述步骤（2）中球磨均匀的条件：以300-400r/min转速球磨6-8h。
优选的，所述步骤（3）中坯片干燥分两段进行，第一段为低温干燥，干燥温度40-60℃，干燥8-10h；第二段为高温干燥，干燥温度为120-140℃，干燥时间6-8h。
优选的，所述步骤（3）中烧成条件：在1200-1400℃下保温3-5h。
与现有技术相比，本发明具有如下的有益效果：本发明的集成电路衬底用绝缘陶瓷具有绝缘电阻值低、绝缘性能好、使用寿命长、生产成本低等优点，具体情况如下：
（1）本发明的集成电路衬底用绝缘陶瓷，以硅锌矿、钛酸钡、烧滑石、钛白粉、二氧化硅、氮化硅、石英粉、云母粉、碳化硼、聚丙烯酸钠、酚醛树脂、氧化铝为主要成分，通过加入粘结剂、复合添加剂、去离子水等辅助成分，辅以研磨分散、二次研磨、搅拌混合、浇注成型、高温烧结等工艺，使得制备的集成电路衬底用绝缘陶瓷环保无危害，绝缘性、耐摩擦性和抗老化性显著提高，同时本发明的制备方法通过严格控制工艺参数，使得制备的绝缘陶瓷可满足集成电路应用的要求；
（2）本发明的集成电路衬底用绝缘陶瓷通过加入硅锌矿、烧滑石、钛白粉、二氧化硅、氮化硅、石英粉、云母粉、氧化铝等无机材料，使得绝缘陶瓷的绝缘性、耐磨性、抗老化性能大大提高；
（3）本发明的制备方法通过严格控制工艺参数，可以控制绝缘陶瓷材料在烧结过程中的结构变化和化学变化，可以满足工业应用的要求，同时本发明相比于已有工艺，可以明显降低能量消耗。
具体实施方式
下面结合具体实施例，进一步阐述本发明。这些实施例仅用于说明本发明而不用于限制本发明的范围。
实施例1
一种集成电路衬底用绝缘陶瓷，由以下按照重量份的原料组成：硅锌矿70份、钛酸钡35份、烧滑石25份、钛白粉20份、二氧化硅15份、氮化硅10份、石英粉5.5份、云母粉7.5份、碳化硼5份、聚丙烯酸钠7份、酚醛树脂12份、氧化铝5.5份、复合添加剂4份、粘结剂3份和去离子水110份。
其中，所述复合添加剂为硼酸、氯化铵和氟化铝按照质量比为1:0.3:0.3的混合物。
其中，所述粘结剂为石蜡或聚丙烯酸甲脂。
一种集成电路衬底用绝缘陶瓷的制备方法，包括以下步骤：
（1）按照配比称取硅锌矿、钛酸钡、烧滑石、钛白粉、二氧化硅、氮化硅、石英粉、云母粉、碳化硼、聚丙烯酸钠、酚醛树脂、氧化铝放入球磨机，充分球磨15h，得到混合粉料A；
（2）向混合粉料B中加入粘结剂和去离子水，混料后进行二次球磨，球磨均匀得到浆料B；
（3）将步骤（2）中浆料B在100℃下保温50min，然后加入复合添加剂球磨15h，得到浆料C，然后将浆料C注入模具中浇注成陶瓷坯片，将坯片干燥，然后装入箱式炉内，烧成，即得集成电路衬底用绝缘陶瓷。
其中，所述步骤（1）中还包括：将球磨后的混合粉料过150目标准筛。
其中，所述步骤（2）中球磨均匀的条件：以350r/min转速球磨7h。
其中，所述步骤（3）中坯片干燥分两段进行，第一段为低温干燥，干燥温度50℃，干燥9h；第二段为高温干燥，干燥温度为130℃，干燥时间7h。
其中，所述步骤（3）中烧成条件：在1300℃下保温4h。
实施例2
一种集成电路衬底用绝缘陶瓷，由以下按照重量份的原料组成：硅锌矿 60份、钛酸钡30份、烧滑石20份、钛白粉10份、二氧化硅10份、氮化硅5份、石英粉3份、云母粉5份、碳化硼2份、聚丙烯酸钠5份、酚醛树脂8份、氧化铝3份、复合添加剂2份、粘结剂1份和去离子水100份。
其中，所述复合添加剂为硼酸、氯化铵和氟化铝按照质量比为1:0.2:0.2的混合物。
其中，所述粘结剂为石蜡或聚丙烯酸甲脂。
一种集成电路衬底用绝缘陶瓷的制备方法，包括以下步骤：
（1）按照配比称取硅锌矿、钛酸钡、烧滑石、钛白粉、二氧化硅、氮化硅、石英粉、云母粉、碳化硼、聚丙烯酸钠、酚醛树脂、氧化铝放入球磨机，充分球磨10h，得到混合粉料A；
（2）向混合粉料B中加入粘结剂和去离子水，混料后进行二次球磨，球磨均匀得到浆料B；
（3）将步骤（2）中浆料B在80℃下保温40min，然后加入复合添加剂球磨12h，得到浆料C，然后将浆料C注入模具中浇注成陶瓷坯片，将坯片干燥，然后装入箱式炉内，烧成，即得集成电路衬底用绝缘陶瓷。
其中，所述步骤（1）中还包括：将球磨后的混合粉料过100目标准筛。
其中，所述步骤（2）中球磨均匀的条件：以300r/min转速球磨6h。
其中，所述步骤（3）中坯片干燥分两段进行，第一段为低温干燥，干燥温度40℃，干燥8-10h；第二段为高温干燥，干燥温度为120℃，干燥时间6h。
其中，所述步骤（3）中烧成条件：在1200℃下保温3h。
实施例3
一种集成电路衬底用绝缘陶瓷，由以下按照重量份的原料组成：硅锌矿80份、钛酸钡40份、烧滑石30份、钛白粉30份、二氧化硅20份、氮化硅15份、石英粉8份、云母粉10份、碳化硼8份、聚丙烯酸钠10份、酚醛树脂15份、氧化铝8份、复合添加剂6份、粘结剂5份和去离子水120份。
其中，所述复合添加剂为硼酸、氯化铵和氟化铝按照质量比为1:0.4:0.4的混合物。
其中，所述粘结剂为石蜡或聚丙烯酸甲脂。
一种集成电路衬底用绝缘陶瓷的制备方法，包括以下步骤：
（1）按照配比称取硅锌矿、钛酸钡、烧滑石、钛白粉、二氧化硅、氮化硅、石英粉、云母粉、碳化硼、聚丙烯酸钠、酚醛树脂、氧化铝放入球磨机，充分球磨20h，得到混合粉料A；
（2）向混合粉料B中加入粘结剂和去离子水，混料后进行二次球磨，球磨均匀得到浆料B；
（3）将步骤（2）中浆料B在120℃下保温60min，然后加入复合添加剂球磨18h，得到浆料C，然后将浆料C注入模具中浇注成陶瓷坯片，将坯片干燥，然后装入箱式炉内，烧成，即得集成电路衬底用绝缘陶瓷。
其中，所述步骤（1）中还包括：将球磨后的混合粉料过200目标准筛。
其中，所述步骤（2）中球磨均匀的条件：以400r/min转速球磨8h。
其中，所述步骤（3）中坯片干燥分两段进行，第一段为低温干燥，干燥温度60℃，干燥10h；第二段为高温干燥，干燥温度为140℃，干燥时间8h。
其中，所述步骤（3）中烧成条件：在1400℃下保温5h。
以上所述仅是本发明的优选实施方式，本发明的保护范围并不仅局限于上述实施例，凡属于本发明思路下的技术方案均属于本发明的保护范围。应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理前提下的若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (9)

1.一种集成电路衬底用绝缘陶瓷，其特征在于，由以下按照重量份的原料组成：硅锌矿60-80份、钛酸钡30-40份、烧滑石20-30份、钛白粉10-30份、二氧化硅10-20份、氮化硅5-15份、石英粉3-8份、云母粉5-10份、碳化硼2-8份、聚丙烯酸钠5-10份、酚醛树脂8-15份、氧化铝3-8份、复合添加剂2-6份、粘结剂1-5份和去离子水100-120份。
2.根据权利要求1所述的集成电路衬底用绝缘陶瓷，其特征在于，所述硅锌矿70份、钛酸钡35份、烧滑石25份、钛白粉20份、二氧化硅15份、氮化硅10份、石英粉5.5份、云母粉7.5份、碳化硼5份、聚丙烯酸钠7份、酚醛树脂12份、氧化铝5.5份、复合添加剂4份、粘结剂3份和去离子水110份。
3.根据权利要求1所述的集成电路衬底用绝缘陶瓷，其特征在于，所述复合添加剂为硼酸、氯化铵和氟化铝按照质量比为1:0.2-0.4:0.2-0.4的混合物。
4.根据权利要求1所述的集成电路衬底用绝缘陶瓷，其特征在于，所述粘结剂为石蜡或聚丙烯酸甲脂。
5.一种根据权利要求1-4任一项所述的集成电路衬底用绝缘陶瓷的制备方法，其特征在于，包括以下步骤：
（1）按照配比称取硅锌矿、钛酸钡、烧滑石、钛白粉、二氧化硅、氮化硅、石英粉、云母粉、碳化硼、聚丙烯酸钠、酚醛树脂、氧化铝放入球磨机，充分球磨10-20h，得到混合粉料A；
（2）向混合粉料B中加入粘结剂和去离子水，混料后进行二次球磨，球磨均匀得到浆料B；
（3）将步骤（2）中浆料B在80-120℃下保温40-60min，然后加入复合添加剂球磨12-18h，得到浆料C，然后将浆料C注入模具中浇注成陶瓷坯片，将坯片干燥，然后装入箱式炉内，烧成，即得集成电路衬底用绝缘陶瓷。
6.根据权利要求5所述的集成电路衬底用绝缘陶瓷的制备方法，其特征在于，所述步骤（1）中还包括：将球磨后的混合粉料过100-200目标准筛。
7.根据权利要求5所述的集成电路衬底用绝缘陶瓷的制备方法，其特征在于，所述步骤（2）中球磨均匀的条件：以300-400r/min转速球磨6-8h。
8.根据权利要求5所述的集成电路衬底用绝缘陶瓷的制备方法，其特征在于，所述步骤（3）中坯片干燥分两段进行，第一段为低温干燥，干燥温度40-60℃，干燥8-10h；第二段为高温干燥，干燥温度为120-140℃，干燥时间6-8h。
9.根据权利要求5所述的集成电路衬底用绝缘陶瓷的制备方法，其特征在于，所述步骤（3）中烧成条件：在1200-1400℃下保温3-5h。
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