CN107331747A - 脊状型led - Google Patents
脊状型led Download PDFInfo
- Publication number
- CN107331747A CN107331747A CN201710347692.0A CN201710347692A CN107331747A CN 107331747 A CN107331747 A CN 107331747A CN 201710347692 A CN201710347692 A CN 201710347692A CN 107331747 A CN107331747 A CN 107331747A
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- China
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- led
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000002161 passivation Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 52
- 230000008569 process Effects 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 12
- 238000002425 crystallisation Methods 0.000 claims description 11
- 230000008025 crystallization Effects 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 241000931526 Acer campestre Species 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 5
- 229910001020 Au alloy Inorganic materials 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 abstract description 13
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 13
- 229910052682 stishovite Inorganic materials 0.000 abstract description 13
- 229910052905 tridymite Inorganic materials 0.000 abstract description 13
- 239000000377 silicon dioxide Substances 0.000 abstract description 12
- 230000004048 modification Effects 0.000 abstract description 11
- 238000012986 modification Methods 0.000 abstract description 11
- 239000010410 layer Substances 0.000 description 97
- 150000002500 ions Chemical class 0.000 description 14
- 239000011241 protective layer Substances 0.000 description 14
- 239000002184 metal Substances 0.000 description 12
- 238000002360 preparation method Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000000137 annealing Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 238000005499 laser crystallization Methods 0.000 description 4
- 230000005693 optoelectronics Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 238000005275 alloying Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710347692.0A CN107331747B (zh) | 2017-05-17 | 2017-05-17 | 脊状型led |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710347692.0A CN107331747B (zh) | 2017-05-17 | 2017-05-17 | 脊状型led |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107331747A true CN107331747A (zh) | 2017-11-07 |
CN107331747B CN107331747B (zh) | 2019-11-26 |
Family
ID=60193632
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710347692.0A Active CN107331747B (zh) | 2017-05-17 | 2017-05-17 | 脊状型led |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN107331747B (zh) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101557074A (zh) * | 2008-04-10 | 2009-10-14 | 电子科技大学 | 硅基锗电注入激光器及制作方法 |
CN104993025A (zh) * | 2015-07-01 | 2015-10-21 | 西安电子科技大学 | 氮化硅膜致应变的锗锡中红外led器件及其制备方法 |
CN106012001A (zh) * | 2016-05-24 | 2016-10-12 | 西安电子科技大学 | 带隙改性Ge材料及其制备方法 |
-
2017
- 2017-05-17 CN CN201710347692.0A patent/CN107331747B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101557074A (zh) * | 2008-04-10 | 2009-10-14 | 电子科技大学 | 硅基锗电注入激光器及制作方法 |
CN104993025A (zh) * | 2015-07-01 | 2015-10-21 | 西安电子科技大学 | 氮化硅膜致应变的锗锡中红外led器件及其制备方法 |
CN106012001A (zh) * | 2016-05-24 | 2016-10-12 | 西安电子科技大学 | 带隙改性Ge材料及其制备方法 |
Non-Patent Citations (1)
Title |
---|
黄志伟等: "激光退火改善Si上外延Ge晶体质量", 《第十一届全国硅基光电子材料及器件研讨会论文摘要集》 * |
Also Published As
Publication number | Publication date |
---|---|
CN107331747B (zh) | 2019-11-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20191025 Address after: No. 1-169, Xingzhong village, Xiaozhi Town, Linhai City, Taizhou City, Zhejiang Province Applicant after: Cai Xiang Address before: 710065 No. 86 Leading Times Square (Block B), No. 2, Building No. 1, Unit 22, Room 12202, No. 51, High-tech Road, Xi'an High-tech Zone, Shaanxi Province Applicant before: XI'AN CREATION KEJI Co.,Ltd. |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20231120 Address after: 066000 no.22-2-2401, tomorrow Star City, Qinhuangdao Economic and Technological Development Zone, Hebei Province Patentee after: Qinhuangdao Maibo Technology Service Co.,Ltd. Address before: 317000 no.1-169 Xingzhong village, Xiaozhi Town, Linhai City, Taizhou City, Zhejiang Province Patentee before: Cai Xiang |