CN107331732B - 一种垂直型多电流通道SiC光导开关及其制作方法 - Google Patents
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Abstract
本发明公开了一种垂直型多电流通道SiC光导开关及其制作方法，首先采用lift‑off工艺将所需电极图形转移到SiC衬底一侧表面，利用磁控溅射工艺在SiC衬底电极图形上依次制作Ti层和W层，然后在W层上利用真空蒸发镀膜工艺依次制作Au层和NiCr层，从而完成接触电极的制作，对制作完接触电极的SiC衬底进行去胶，使衬底形成多电流通道的，采用多电流通道的方法来减小现有开关中出现的电流丝效应，电流丝效应是电流集中在局部区域，会使得该区域温度升高很多，从而导致开关热损坏，降低器件寿命；多电流通道将电流分散在开关中，减少了热集中，增加了光导开光的寿命；通过在SiC光导开关上设置多电流通道，减小电流密度，从而提高开关耐压能力及可靠性。
Description
技术领域
本发明属于光导开关制备领域，具体涉及一种垂直型多电流通道SiC光导开关及其制作方法。
背景技术
光导开关由于响应快、功率容量大、重复频率高、抖动小、抗干扰能力强等优点，在脉冲功率系统具有十分广阔的应用前景，是当前超快大功率半导体开关领域的研究热点之一。SiC击穿场强大、热导率高，可满足更高电压、更大电流(功率)和高重频的应用需求，是当前最适合制备光导开关的材料。但是通常的横向光导开关耐压能力不足，难以胜任超高电压下使用情况，并且大电流通过开关时的集中现象也容易使器件发热，性能退化。因此，本发明提出一种垂直型多电流通道SiC光导开关来分散电流，减小电流密度，从而提高开关耐压能力及可靠性。
发明内容
本发明的目的在于提供一种垂直型多电流通道SiC光导开关及其制作方法，以克服现有技术的不足。
为达到上述目的，本发明采用如下技术方案：
一种垂直型多电流通道SiC光导开关的制作方法，具体包括以下步骤：
首先对SiC衬底做抛光处理，然后采用lift-off工艺将所需电极图形转移到SiC衬底一侧表面，利用磁控溅射工艺在SiC衬底电极图形上依次制作Ti层和W层，在W层上利用真空蒸发镀膜工艺依次制作Au层和NiCr层，完成接触电极的制作，对制作完接触电极的SiC衬底进行去胶，去胶后在SiC衬底的另一侧表面用蒸发镀膜蒸镀金锗镍合金层，通过退火处理得到SiC光导开关。
进一步的，对SiC衬底做抛光处理，去除SiC衬底表面的氧化物。
进一步的对SiC衬底做抛光处理：将SiC衬底依次通过丙酮、酒精、去离子水各超声清洗5-10min，然后用浓H2SO4浸泡5-10min，再依次通过丙酮、酒精和去离子水各超声清洗5-10min，然后通过氮气吹干。
进一步的，采用lift-off工艺，将所需图形转移到SiC衬底表面，具体的：将抛光后的SiC衬底安装在甩胶机上，在抛光后的SiC衬底表面滴入光刻胶，然后通过甩胶机匀速转动即得到均匀的、没有缺陷的光刻胶膜；将得到光刻胶膜的SiC衬底置于90-110℃的加热台上，烘烤85-95s；用波长为360-370nm的紫外光曝光175-185s，结束后取下样品；将曝光后的SiC衬底置于正胶显影液不少于55s，用去离子水冲洗不少于30s，除掉显影液残留，再用氮气吹干即可得到光刻后带有电极图像的SiC衬底。
进一步的，采用光刻胶为正性光刻胶SUN-110P；甩胶机转速为2000转/min-3000转/min。
进一步的，磁控溅射过程中在Ar气氛围下进行，功率为80W，溅射气压为1.2Pa。
进一步的，对制作完接触电极的SiC衬底进行去胶，将制作完接触电极的SiC衬底依次通过丙酮、酒精、去离子水各超声清洗3-5min，去除圆孔内的胶，同时胶上附着的金属也会脱落。
进一步的，其中酒精浓度大于95％，浓硫酸浓度大于95％。
进一步的，通过在惰性气体氛围下在700-800℃下退火50-70s完成退火处理。
一种垂直型多电流通道SiC光导开关，SiC衬底一面为接触电极，SiC衬底另一面为全电极，SiC衬底中间为多个通光孔，通光孔的半径为80μm，SiC衬底的半径为750μm，所述SiC光导开关的Ti层为40nm、W层为100nm、NiCr层为20nm、Au层为150nm。
与现有技术相比，本发明具有以下有益的技术效果：
本发明一种垂直型多电流通道SiC光导开关及其制作方法，首先采用lift-off工艺将所需电极图形转移到SiC衬底一侧表面，利用磁控溅射工艺在SiC衬底电极图形上依次制作Ti层和W层，然后在W层上利用真空蒸发镀膜工艺依次制作Au层和NiCr层，从而完成接触电极的制作，对制作完接触电极的SiC衬底进行去胶，使衬底形成多电流通道的，采用多电流通道的方法来减小现有开关中出现的电流丝效应，电流丝效应是电流集中在局部区域，会使得该区域温度升高很多，从而导致开关热损坏，降低器件寿命；多电流通道将电流分散在开关中，减少了热集中，增加了光导开光的寿命；去胶后在SiC衬底的另一侧表面用蒸发镀膜蒸镀金锗镍合金层，通过退火处理得到SiC光导开关，通过在SiC光导开关上设置多电流通道，减小电流密度，从而提高开关耐压能力及可靠性。
附图说明
图1为本发明俯视图。
图2为本发明截面示意图。
图3为本发明实物图。
具体实施方式
下面结合附图对本发明做进一步详细描述：
一种垂直型多电流通道SiC光导开关的制作方法，具体包括以下步骤：
首先对SiC衬底做抛光处理，然后采用lift-off工艺将所需电极图形转移到SiC衬底一侧表面，利用磁控溅射工艺在SiC衬底电极图形上依次制作Ti层和W层，在W层上利用真空蒸发镀膜工艺依次制作Au层和NiCr层，完成接触电极的制作，对制作完接触电极的SiC衬底进行去胶，去胶后在SiC衬底的另一侧表面用蒸发镀膜蒸镀金锗镍合金层，通过退火处理得到SiC光导开关。
具体的，对SiC衬底做抛光处理，去除SiC衬底表面的氧化物；
首先将SiC衬底依次通过丙酮、酒精、去离子水各超声清洗5-10min，然后用浓H2SO4浸泡5-10min，再依次通过丙酮、酒精和去离子水各超声清洗5-10min，然后通过氮气吹干，置于光学显微镜下观察，看表面是否洁净，采用这种处理方法除去SiC衬底表面的氧化物；其中酒精浓度大于95％，浓硫酸浓度大于95％；
然后采用lift-off工艺，将所需图形转移到SiC衬底表面，具体的：将抛光后的SiC衬底安装在甩胶机上，在抛光后的SiC衬底表面滴入光刻胶，然后通过甩胶机匀速转动即得到均匀的、没有缺陷的光刻胶膜；采用光刻胶为正性光刻胶SUN-110P；甩胶机转速为2000转/min-3000转/min；将得到光刻胶膜的SiC衬底进行前烘：将样品置于90-110℃的加热台上，烘烤85-95s；通过前烘挥发光刻胶膜中的溶剂，减小灰尘对光刻胶膜的污染，同时由于光刻胶膜高速旋转而产生的应力，提高了光刻胶膜与衬底之间的黏附性；使用URE2000光刻机，用显微镜将前烘后的SiC衬底与掩模板上所选图形进行对准，然后用波长为360-370nm的紫外光曝光175-185s，结束后取下样品，要注意不能接触短波长光源以免发生二次曝光；将曝光后的SiC衬底置于正胶显影液不少于55s，用去离子水冲洗不少于30s，除掉显影液残留，再用氮气吹干即可得到光刻后带有电极图像的SiC衬底，在显微镜下观测光刻后的图形是否完整；
利用磁控溅射工艺在SiC衬底电极图形上依次制作Ti层和W层，磁控溅射过程中在Ar气氛围下进行，功率为20-180W，溅射气压为1.1-1.3Pa；
对制作完接触电极的SiC衬底进行去胶，将制作完接触电极的SiC衬底依次通过丙酮、酒精、去离子水各超声清洗3-5min，去除圆孔内的胶，同时胶上附着的金属也会脱落，其中酒精浓度大于95％，浓硫酸浓度大于95％。
在SiC衬底的另一侧面采用真空蒸发镀膜蒸镀金锗镍合金层；真空度为5×10-4Pa。
制作完成的SiC衬底与金属层之间的接触是肖特基接触，通过在惰性气体氛围下在700-800℃下退火50-70s，使金属与半导体间形成电阻较小的化合物来降低接触电阻，所得到的SiC光导开关最小比接触电阻率为6.86×10-7Ω·cm2，实现了良好的欧姆接触，其中惰性气体为氩气或氮气中的一种。
如图1至图3所示，根据一种垂直型多电流通道SiC光导开关的制作方法制备的垂直型多电流通道SiC光导开关，SiC衬底一面为接触电极，SiC衬底另一面为全电极，SiC衬底中间为多个通光孔，通光孔的半径为80μm，SiC衬底的半径为750μm，所述SiC光导开关的Ti层为40nm、W层为100nm、NiCr层为20nm、Au层为150nm。
Claims (6)
1.一种垂直型多电流通道SiC光导开关的制作方法，其特征在于，具体包括以下步骤：
首先对SiC衬底做抛光处理，将SiC衬底依次通过丙酮、酒精、去离子水各超声清洗5-10min，然后用浓H2SO4浸泡5-10min，再依次通过丙酮、酒精和去离子水各超声清洗5-10min，然后通过氮气吹干，去除SiC衬底表面的氧化物，然后采用lift-off工艺将所需电极图形转移到SiC衬底一侧表面：将抛光后的SiC衬底安装在甩胶机上，在抛光后的SiC衬底表面滴入光刻胶，然后通过甩胶机匀速转动即得到均匀的、没有缺陷的光刻胶膜；将得到光刻胶膜的SiC衬底置于90-110℃的加热台上，烘烤85-95s；然后用波长为360-370nm的紫外光曝光175-185s，结束后取下样品；将曝光后的SiC衬底置于正胶显影液不少于55s，用去离子水冲洗不少于30s，除掉显影液残留，再用氮气吹干即可得到光刻后带有电极图像的SiC衬底，
利用磁控溅射工艺在SiC衬底电极图形上依次制作Ti层和W层，在W层上利用真空蒸发镀膜工艺依次制作Au层和NiCr层，完成接触电极的制作，对制作完接触电极的SiC衬底进行去胶，去除圆孔内的胶；磁控溅射过程中在Ar气氛围下进行，功率为80W，溅射气压为1.2Pa；对制作完接触电极的SiC衬底进行去胶，去胶后在SiC衬底的另一侧表面用真空蒸发镀膜蒸镀金锗镍合金层，通过退火处理得到SiC光导开关；SiC光导开关的SiC衬底一面为接触电极，SiC衬底另一面为全电极，SiC衬底中间为多个通光孔。
2.根据权利要求1所述的一种垂直型多电流通道SiC光导开关的制作方法，其特征在于，采用光刻胶为正性光刻胶SUN-110P；甩胶机转速为2000转/min-3000转/min。
3.根据权利要求1所述的一种垂直型多电流通道SiC光导开关的制作方法，其特征在于，对制作完接触电极的SiC衬底进行去胶，将制作完接触电极的SiC衬底依次通过丙酮、酒精、去离子水各超声清洗3-5min，去除圆孔内的胶，同时胶上附着的金属也会脱落。
4.根据权利要求3所述的一种垂直型多电流通道SiC光导开关的制作方法，其特征在于，其中酒精浓度大于95％，浓硫酸浓度大于95％。
5.根据权利要求1所述的一种垂直型多电流通道SiC光导开关的制作方法，其特征在于，通过在惰性气体氛围下在700-800℃下退火50-70s完成退火处理。
6.一种基于权利要求1所述的制作方法制作的SiC光导开关，其特征在于，SiC衬底一面为接触电极，SiC衬底另一面为全电极，SiC衬底中间为多个通光孔，通光孔的半径为80μm，SiC衬底的半径为750μm，所述SiC光导开关的Ti层为40nm、W层为100nm、NiCr层为20nm、Au层为150nm。
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