CN107290943B - 同轴掩模对准装置、光刻设备及对准方法 - Google Patents

同轴掩模对准装置、光刻设备及对准方法 Download PDF

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Publication number
CN107290943B
CN107290943B CN201610200702.3A CN201610200702A CN107290943B CN 107290943 B CN107290943 B CN 107290943B CN 201610200702 A CN201610200702 A CN 201610200702A CN 107290943 B CN107290943 B CN 107290943B
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China
Prior art keywords
mask
mask alignment
alignment mark
reference label
light beam
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Application number
CN201610200702.3A
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English (en)
Chinese (zh)
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CN107290943A (zh
Inventor
张成爽
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Xinshang Microelectronics Technology Co ltd
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Shanghai Micro Electronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority to CN201610200702.3A priority Critical patent/CN107290943B/zh
Application filed by Shanghai Micro Electronics Equipment Co Ltd filed Critical Shanghai Micro Electronics Equipment Co Ltd
Priority to PCT/CN2017/078939 priority patent/WO2017167260A1/zh
Priority to US16/090,015 priority patent/US10901331B2/en
Priority to TW106111133A priority patent/TW201737402A/zh
Priority to SG11201808604XA priority patent/SG11201808604XA/en
Priority to KR1020187030626A priority patent/KR102190328B1/ko
Priority to JP2018550689A priority patent/JP6856263B2/ja
Publication of CN107290943A publication Critical patent/CN107290943A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7065—Production of alignment light, e.g. light source, control of coherence, polarization, pulse length, wavelength
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G03F7/70741—Handling masks outside exposure position, e.g. reticle libraries
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7007—Alignment other than original with workpiece
    • G03F9/7015—Reference, i.e. alignment of original or workpiece with respect to a reference not on the original or workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Library & Information Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
CN201610200702.3A 2016-03-31 2016-03-31 同轴掩模对准装置、光刻设备及对准方法 Active CN107290943B (zh)

Priority Applications (7)

Application Number Priority Date Filing Date Title
CN201610200702.3A CN107290943B (zh) 2016-03-31 2016-03-31 同轴掩模对准装置、光刻设备及对准方法
US16/090,015 US10901331B2 (en) 2016-03-31 2017-03-31 Coaxial mask alignment device, photolithography apparatus and alignment method
TW106111133A TW201737402A (zh) 2016-03-31 2017-03-31 同軸遮罩對準裝置、光蝕刻設備及對準方法
SG11201808604XA SG11201808604XA (en) 2016-03-31 2017-03-31 Coaxial mask alignment device, photolithography apparatus and alignment method
PCT/CN2017/078939 WO2017167260A1 (zh) 2016-03-31 2017-03-31 同轴掩模对准装置、光刻设备及对准方法
KR1020187030626A KR102190328B1 (ko) 2016-03-31 2017-03-31 동축 마스크 정렬 디바이스, 포토리소그래피 장치 및 정렬 방법
JP2018550689A JP6856263B2 (ja) 2016-03-31 2017-03-31 同軸マスク位置合せデバイス、フォトリトグラフィ装置および位置合せ方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610200702.3A CN107290943B (zh) 2016-03-31 2016-03-31 同轴掩模对准装置、光刻设备及对准方法

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CN107290943A CN107290943A (zh) 2017-10-24
CN107290943B true CN107290943B (zh) 2019-01-29

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Country Link
US (1) US10901331B2 (enExample)
JP (1) JP6856263B2 (enExample)
KR (1) KR102190328B1 (enExample)
CN (1) CN107290943B (enExample)
SG (1) SG11201808604XA (enExample)
TW (1) TW201737402A (enExample)
WO (1) WO2017167260A1 (enExample)

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CN112513564A (zh) * 2018-07-27 2021-03-16 日本电气株式会社 信息处理设备、系统、方法和计算机可读介质
CN109240047B (zh) * 2018-11-06 2023-11-21 苏州源卓光电科技有限公司 一种直写式曝光机及其标定方法
CN111380509B (zh) * 2018-12-28 2022-04-01 上海微电子装备（集团）股份有限公司 一种掩模版姿态监测方法、装置及掩模版颗粒度检测设备
CN113514477B (zh) * 2020-04-10 2024-06-11 深圳中科飞测科技股份有限公司 一种光学设备及其对准方法和检测方法
CN114323577B (zh) * 2021-12-10 2024-04-02 智慧星空(上海)工程技术有限公司 成像镜头性能检测系统
CN116466551A (zh) * 2023-04-17 2023-07-21 合肥芯碁微电子装备股份有限公司 背面对准装置及其方法和曝光设备

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Also Published As

Publication number Publication date
KR20180126544A (ko) 2018-11-27
CN107290943A (zh) 2017-10-24
JP6856263B2 (ja) 2021-04-07
US20190113856A1 (en) 2019-04-18
SG11201808604XA (en) 2018-10-30
US10901331B2 (en) 2021-01-26
JP2019511747A (ja) 2019-04-25
KR102190328B1 (ko) 2020-12-11
TW201737402A (zh) 2017-10-16
WO2017167260A1 (zh) 2017-10-05

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