CN107287659B - 激光晶体及其制备方法 - Google Patents
激光晶体及其制备方法 Download PDFInfo
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- CN107287659B CN107287659B CN201710483403.XA CN201710483403A CN107287659B CN 107287659 B CN107287659 B CN 107287659B CN 201710483403 A CN201710483403 A CN 201710483403A CN 107287659 B CN107287659 B CN 107287659B
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- 239000013078 crystal Substances 0.000 title claims abstract description 132
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 229910001387 inorganic aluminate Inorganic materials 0.000 claims abstract description 27
- 239000000126 substance Substances 0.000 claims abstract description 14
- 238000005245 sintering Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 8
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 6
- FIXNOXLJNSSSLJ-UHFFFAOYSA-N ytterbium(III) oxide Inorganic materials O=[Yb]O[Yb]=O FIXNOXLJNSSSLJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052741 iridium Inorganic materials 0.000 claims description 5
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052593 corundum Inorganic materials 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 4
- 239000004615 ingredient Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 238000010792 warming Methods 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 239000004411 aluminium Substances 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 238000000862 absorption spectrum Methods 0.000 abstract description 7
- 238000000034 method Methods 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 9
- 238000001228 spectrum Methods 0.000 description 9
- 230000006872 improvement Effects 0.000 description 8
- 238000005086 pumping Methods 0.000 description 6
- -1 rare earth ion Chemical class 0.000 description 6
- 229910052761 rare earth metal Inorganic materials 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 230000005284 excitation Effects 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000002189 fluorescence spectrum Methods 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 238000000462 isostatic pressing Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000003746 solid phase reaction Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910002561 K2NiF4 Inorganic materials 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 210000001367 artery Anatomy 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005090 crystal field Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000003280 down draw process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000000695 excitation spectrum Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 229910052909 inorganic silicate Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Lasers (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
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CN201710483403.XA CN107287659B (zh) | 2017-06-23 | 2017-06-23 | 激光晶体及其制备方法 |
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CN201710483403.XA CN107287659B (zh) | 2017-06-23 | 2017-06-23 | 激光晶体及其制备方法 |
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CN107287659A CN107287659A (zh) | 2017-10-24 |
CN107287659B true CN107287659B (zh) | 2019-11-12 |
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CN201710483403.XA Active CN107287659B (zh) | 2017-06-23 | 2017-06-23 | 激光晶体及其制备方法 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110158150B (zh) * | 2019-05-20 | 2021-04-09 | 山东大学 | 激活离子掺杂的ABAlO4单晶光纤及其制备方法与应用 |
CN110528075A (zh) * | 2019-10-17 | 2019-12-03 | 中国工程物理研究院化工材料研究所 | 一种掺镱硼酸钙镧钇混晶激光晶体及其制备方法和应用 |
CN114854413B (zh) * | 2022-04-08 | 2023-08-22 | 渤海大学 | 一种无掺杂激活剂的基质发光近红外荧光材料及其制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06350181A (ja) * | 1993-06-08 | 1994-12-22 | Tosoh Corp | レーザー結晶およびその製造方法 |
CN101899302A (zh) * | 2010-07-09 | 2010-12-01 | 浙江大学 | 一种近紫外激发白光荧光粉及其制备方法 |
CN102094237A (zh) * | 2011-01-14 | 2011-06-15 | 中国科学院上海光学精密机械研究所 | 掺钬铝酸钇钙激光晶体的生长方法 |
CN102534785A (zh) * | 2010-12-16 | 2012-07-04 | 中国科学院福建物质结构研究所 | 一种铒激活铝酸镧钙新型中波红外激光晶体 |
CN103882522A (zh) * | 2014-03-21 | 2014-06-25 | 中国科学院上海光学精密机械研究所 | 离子掺杂铝酸钙钆激光晶体的制备方法 |
-
2017
- 2017-06-23 CN CN201710483403.XA patent/CN107287659B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06350181A (ja) * | 1993-06-08 | 1994-12-22 | Tosoh Corp | レーザー結晶およびその製造方法 |
CN101899302A (zh) * | 2010-07-09 | 2010-12-01 | 浙江大学 | 一种近紫外激发白光荧光粉及其制备方法 |
CN102534785A (zh) * | 2010-12-16 | 2012-07-04 | 中国科学院福建物质结构研究所 | 一种铒激活铝酸镧钙新型中波红外激光晶体 |
CN102094237A (zh) * | 2011-01-14 | 2011-06-15 | 中国科学院上海光学精密机械研究所 | 掺钬铝酸钇钙激光晶体的生长方法 |
CN103882522A (zh) * | 2014-03-21 | 2014-06-25 | 中国科学院上海光学精密机械研究所 | 离子掺杂铝酸钙钆激光晶体的制备方法 |
Non-Patent Citations (2)
Title |
---|
A study of exchange interaction in Cr3+-doped CaY1-xGdxAlO4;M Yamaga,et al.;《Journal of Physics:Condensed Matter》;19970217;第9卷(第7期);1575-1584 * |
Highly-efficient multi-watt Yb:CaLnAlO4 microchip lasers;Pavel Loiko,et al.;《Solid State Lasers XXVI:Technology and Devices》;20170228;第10082卷;1008215 * |
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CN107287659A (zh) | 2017-10-24 |
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Effective date of registration: 20200506 Address after: 239004 east of yongyang Road, west of Nanjing Road, north of Anqing road and south of Lu'an road in Langya Economic Development Zone, Langya District, Chuzhou City, Anhui Province Patentee after: Anhui Guangzhi Technology Co.,Ltd. Address before: 511517 Guangdong province Qingyuan Baijia Industrial Park 27-9B Patentee before: FIRST RARE MATERIALS Co.,Ltd. |
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Application publication date: 20171024 Assignee: FIRST SEMICONDUCTOR MATERIALS Co.,Ltd. Assignor: Anhui Guangzhi Technology Co.,Ltd. Contract record no.: X2020990000431 Denomination of invention: Laser crystal and its preparation method Granted publication date: 20191112 License type: Common License Record date: 20200821 |
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Assignee: FIRST SEMICONDUCTOR MATERIALS Co.,Ltd. Assignor: Anhui Guangzhi Technology Co.,Ltd. Contract record no.: X2020990000431 Date of cancellation: 20220413 |
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Application publication date: 20171024 Assignee: FIRST SEMICONDUCTOR MATERIALS Co.,Ltd. Assignor: Anhui Guangzhi Technology Co.,Ltd. Contract record no.: X2022980005544 Denomination of invention: Laser crystal and its preparation method Granted publication date: 20191112 License type: Common License Record date: 20220520 |
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Denomination of invention: Laser crystal and its preparation method Effective date of registration: 20221130 Granted publication date: 20191112 Pledgee: Chuzhou Branch of Industrial Bank Co.,Ltd. Pledgor: Anhui Guangzhi Technology Co.,Ltd. Registration number: Y2022980023974 |
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Date of cancellation: 20221214 Granted publication date: 20191112 Pledgee: Chuzhou Branch of Industrial Bank Co.,Ltd. Pledgor: Anhui Guangzhi Technology Co.,Ltd. Registration number: Y2022980023974 |
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Assignee: FIRST SEMICONDUCTOR MATERIALS Co.,Ltd. Assignor: Anhui Guangzhi Technology Co.,Ltd. Contract record no.: X2022980005544 Date of cancellation: 20230103 |