CN107275424B - 一种基于同质ZnO纳米核壳阵列的紫外光响应器件及制备方法 - Google Patents

一种基于同质ZnO纳米核壳阵列的紫外光响应器件及制备方法 Download PDF

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CN107275424B
CN107275424B CN201710440495.3A CN201710440495A CN107275424B CN 107275424 B CN107275424 B CN 107275424B CN 201710440495 A CN201710440495 A CN 201710440495A CN 107275424 B CN107275424 B CN 107275424B
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于乃森
何艳
陈向丰
齐岩
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Dalian Minzu University
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Abstract

一种基于同质ZnO纳米核壳阵列的紫外光响应器件，其是在玻璃衬底和透明接触电极之间设有基于同质ZnO纳米核壳阵列层。透明接触电极为刻有0.2cm沟道的ITO导电玻璃；基于的ZnO纳米核壳阵列是由ZnO纳米阵列籽晶层、生长于ZnO纳米阵列籽晶层表面的ZnO纳米棒阵列核层和生长于纳米棒表面的ZnO纳米片状壳层组成。本发明的结构层是以ZnO纳米阵列为载体，采用乙酸锌和六次甲基四胺为原料，首先采用低温水溶液在ZnO表面生长ZnO纳米棒阵列，然后再用低温乙醇溶剂热在纳米棒阵列上生长ZnO纳米片层结构。本发明制备方法简单、反应温度低并且制备出的产品对紫外光有着非常好的光响应。

Description

一种基于同质ZnO纳米核壳阵列的紫外光响应器件及制备 方法
技术领域
本发明涉及一种半导体材料。
背景技术
作为一种重要的宽禁带半导体材料，氧化锌材料具有优异的光学和电学特性，有序氧化锌纳米阵列由于具有较高的比表面积和较快的电子传输能力，同时它具有无毒，原材料成本低，生长方法简单。因此近年来成为发光二极管和紫外探测器等的热门材料，具有很好的应用潜力。
目前报道的ZnO纳米结构丰富多彩，主要集中在一维垂直阵列的研究方面，基于ZnO纳米阵列的紫外探测器纳米线阵列具有很大的比表面积并可以为载流子提供快速的定向传输通道近年来得到越来越多的关注。如何进一步提高其性能也一直是研究的热点，基于一维ZnO纳米材料紫外探测器性能还有待于进一步提高，目前现有方法多集中在表面贵金属修饰，工艺复杂，成本较高。
发明内容
本发明的目的在于提供一种制备工艺简单，成本低，性能稳定且优异的基于同质ZnO纳米核壳阵列的紫外光响应器件及制备方法。本发明本发明的结构层是以低成本的ZnO纳米阵列为载体，采用乙酸锌和六次甲基四胺为原料，首先采用低温水溶液在ZnO表面生长ZnO纳米棒阵列，然后再用低温乙醇溶剂热在纳米棒阵列上生长ZnO纳米片层结构。
一、该器件主要是在玻璃衬底和透明接触电极之间设有基于同质ZnO纳米核壳阵列层。其中，透明接触电极为刻有0.2cm沟道的ITO导电玻璃；基于的ZnO纳米核壳阵列是由ZnO纳米阵列籽晶层、生长于ZnO纳米阵列籽晶层表面的ZnO纳米棒阵列核层和生长于纳米棒表面的ZnO纳米片状壳层组成。最好透明接触电极外面设有玻璃保护层。
二、上述紫外光响应器件的制备方法如下：
①将30mM乙酸锌溶于无水乙醇，制得籽晶溶液；
②玻璃衬底置于旋涂机上，将步骤①籽晶溶液滴于表面，静置5分钟后进行旋涂，最好按照2500转/分转速旋涂，时间为5min。随后将生长有籽晶的玻璃衬底置于加热台，200℃条件下快速加热15分钟后，自然冷却到室温，得热处理后生长有籽晶的玻璃衬底片；
③将0.6585g乙酸锌和0.4205g六次甲基四胺溶于100mL水，快速搅拌均匀，制得混合溶液；
④将生长有籽晶的玻璃衬底片浸入步骤③混合溶液中，于90℃温度反应5小时。反应结束取出所得玻璃衬底片并用水洗涤，晾干，得生长有ZnO纳米棒阵列的玻璃衬底片；
⑤将0.2195g乙酸锌溶于100mL无水乙醇中，搅拌30分钟以上，制得壳层生长溶液；
⑥将步骤④所得的玻璃衬底片浸入步骤⑤所得的溶液中，并将生长有ZnO纳米棒阵列正面朝上即面向溶液悬浮生长，于70℃温度反应5小时，反应结束取出所得样品并用水洗涤，晾干，得同质修饰的ZnO阵列结构的玻璃衬底片；
⑦将制备所得同质修饰的ZnO阵列结构的玻璃衬底片置于加热炉中以10℃/分钟升温速率升温至400℃，并保温1小时自然降温。
⑧将刻有0.2cm沟道的ITO导电玻璃，贴于⑦所得阵列结构表面，并加以固定。
本发明与现有技术相比具有如下优点：
1、本发明的产品对紫外光有着非常好的光响应，比单纯的ZnO纳米阵列性能更优越。
2、本发明的制备方法不需要催化剂，条件温和，操作简单，制造成本低。
附图说明
图1为本发明实施例中基于同质ZnO纳米核壳阵列紫外光响应器件结构示意图。
图2为本发明实施例中同质ZnO纳米核壳阵列扫描电镜低倍形貌图；
图3为本发明实施例中同质ZnO纳米核壳阵列扫描电镜低高倍形貌图；
图4为本发明实施例中单根同质ZnO纳米核壳结构透射电镜图；
图5为本发明实施例中基于同质ZnO纳米核壳阵列紫外光响应器件暗态以及紫外光照下的I-V曲线图；
图6为本发明实施例中同样器件结构，未经过同质修饰的ZnO阵列紫外光响应器件暗态以及紫外光照下的I-V曲线图；
图7为本发明实施例中基于同质ZnO纳米核壳阵列紫外光响应器件外光照下电流随时间变化图。
图8为本发明实施例中基于同质ZnO纳米核壳阵列紫外光响应器件外光照下电流随时间在不同强度紫外光功率密度变化图
图9为本发明实施例中基于同质ZnO纳米核壳阵列紫外光响应器件外光照下光电流与紫外光功率密度线性关系图。
对上面附图的说明
图1中：1、玻璃表面，2、透明接触电极，3、ZnO纳米片状壳层，4、ZnO纳米阵列籽晶层，5、玻璃衬底。从图1可以看出，基于同质ZnO纳米核壳阵列紫外光响应器件结构简单，由接触电极与样品固定。
从图2、图3和图4中可以看出，ZnO纳米棒阵列表面由ZnO纳米片均匀包覆。
从图5可以看出，本发明实施例所制得的同质ZnO纳米核壳阵列结构紫外探测器对紫外光(365nm)具有非常好的光响应，紫外灯照射下，其光电流有显著提高，较图6基于未经过同质修饰的ZnO阵列紫外光响应有显著提高。
从图7可以看出，本发明实施例所制得的同质ZnO纳米核壳阵列结构紫外探测器具有很好的稳定性，光电流随着紫外灯的周期开关呈现周期性响应。
从图8和图9可以看出，该器件的光电流随紫外光强度增加，并呈现线性关系。
具体实施方式
下述非限制性实施例可以使本领域的普通技术人员更全面地理解本发明，但不以任何方式限制本发明。
下述实施例中所述试验方法，如无特殊说明，均为常规方法；所述试剂和材料，如无特殊说明，均可从商业途径获得。
实施实例
首先将30mM无水乙酸锌溶于乙醇，制得籽晶溶液。将玻璃衬底置于旋涂机上，将配置好的籽晶溶液滴于表面，静置5分钟后按照2500转/分转速进行旋涂，时间为5min。随后将生长有籽晶的玻璃衬底置于快速加热台上，在200℃条件下快速加热15分钟后，自然冷却到室温。然后用电子天平分别准确称取0.6585g乙酸锌和0.4205g六次甲基四胺，并溶于100ml去离子水，快速搅拌均匀，制得混合溶液。将热处理后即生长有籽晶的玻璃片衬底浸入混合溶液中，于90℃反应5小时。反应结束取出所得玻璃衬底并用水洗涤，晾干。随后用电子天平分别准确称取0.2195g乙酸锌，并溶于100ml无水乙醇中，搅拌30分钟以上，制得壳层生长溶液。将生长有ZnO纳米棒阵列的玻璃衬底片浸入混合溶液中，将生长有ZnO纳米阵列正面朝上即面向溶液悬浮生长，于70℃温度反应5小时，反应结束取出所得样品并用水洗涤，晾干。随后将同质修饰的ZnO阵列结构的玻璃衬底片置于加热炉中以10℃/分钟升温速率升温至400℃，保温1小时后自然冷却至室温。将刻有0.2cm沟道的ITO玻璃，贴于热处理后所得同质修饰的ZnO阵列结构表面，并加以固定，得到的基于同质ZnO纳米核壳阵列紫外光响应器件如图1所示，在玻璃衬底5和玻璃表面1蒸镀透明接触电极2之间设有基于同质ZnO纳米核壳阵列层。其中，透明接触电极为刻有0.2cm沟道的ITO导电玻璃；基于的ZnO纳米纳米核壳阵列由下至上依次是ZnO纳米阵列籽晶层4、生长于ZnO纳米阵列籽晶层表面的ZnO纳米棒阵列核层和生长于纳米棒表面的ZnO纳米片状壳层3。

Claims (3)

1.一种基于同质ZnO纳米核壳阵列的紫外光响应器件，其是在玻璃衬底和透明接触电极之间设有基于同质ZnO纳米核壳阵列层，其特征在于:透明接触电极为刻有0.2cm沟道的ITO导电玻璃；基于的ZnO纳米核壳阵列是由ZnO纳米阵列籽晶层、生长于ZnO纳米阵列籽晶层表面的ZnO纳米棒阵列核层和生长于纳米棒表面的ZnO纳米片状壳层组成。
2.根据权利要求1所述的基于同质ZnO纳米核壳阵列的紫外光响应器件，其特征在于:透明接触电极外面设有玻璃保护层。
3.一种根据权利要求1所述的基于同质ZnO纳米核壳阵列的紫外光响应器件的制备方法，其特征在于：
①将30mM乙酸锌溶于乙醇，制得籽晶溶液；
②玻璃衬底置于旋涂机上，将步骤①籽晶溶液滴于表面，静置5分钟按照2500转/分转速进行旋涂，旋涂时间为5分钟，随后将生长有籽晶的玻璃衬底置于快速加热台，在200℃条件下快速加热15分钟后，随后自然冷却到室温；
③将0.6585g乙酸锌和0.4205g六次甲基四胺溶于100mL水，快速搅拌均匀，制得混合溶液；
④将生长有籽晶的玻璃衬底片浸入步骤③混合溶液中，于90℃温度反应5小时，反应结束取出所得玻璃衬底片并用水洗涤，晾干；
⑤将0.2195g乙酸锌溶于100mL乙醇，搅拌30分钟以上，制得壳层生长溶液；
⑥将步骤④所得的玻璃衬底片浸入步骤⑤所得的溶液中，并将生长有ZnO纳米棒阵列正面朝上，于70℃温度反应5小时，反应结束取出所得样品并用水洗涤，晾干，并置于加热炉中以10℃/分钟升温速率升温至400℃，并保温1小时自然降温；
⑦将刻有0.2cm沟道的ITO导电玻璃，贴于⑥所得阵列结构表面，并加以固定。
CN201710440495.3A 2017-06-13 2017-06-13 一种基于同质ZnO纳米核壳阵列的紫外光响应器件及制备方法 Expired - Fee Related CN107275424B (zh)

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
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CN108493290B (zh) * 2018-04-28 2020-04-14 大连民族大学 一种紫外光响应器件及其制备方法
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CN112909109B (zh) * 2021-02-10 2022-11-29 北京工业大学 一种基于横向桥接pn结的自供电纳米紫外探测器

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102320758A (zh) * 2011-08-01 2012-01-18 浙江大学 一种核壳结构ZnO纳米同质节阵列的制备方法
CN102544378A (zh) * 2011-11-30 2012-07-04 中国科学院等离子体物理研究所 一种基于ZnO同质核壳结构纳米棒阵列的有机/无机杂化太阳电池及其制备方法
CN102800747A (zh) * 2012-07-11 2012-11-28 上海大学 一种ZnS包覆的ZnO纳米阵列核壳结构的制备方法
CN104851942A (zh) * 2015-03-31 2015-08-19 淮阴工学院 ZnO/I掺杂ZnO核/壳结构纳米线阵列的制备方法
CN106549079A (zh) * 2016-09-30 2017-03-29 大连民族大学 一种紫外光探测器及其制备方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102320758A (zh) * 2011-08-01 2012-01-18 浙江大学 一种核壳结构ZnO纳米同质节阵列的制备方法
CN102544378A (zh) * 2011-11-30 2012-07-04 中国科学院等离子体物理研究所 一种基于ZnO同质核壳结构纳米棒阵列的有机/无机杂化太阳电池及其制备方法
CN102800747A (zh) * 2012-07-11 2012-11-28 上海大学 一种ZnS包覆的ZnO纳米阵列核壳结构的制备方法
CN104851942A (zh) * 2015-03-31 2015-08-19 淮阴工学院 ZnO/I掺杂ZnO核/壳结构纳米线阵列的制备方法
CN106549079A (zh) * 2016-09-30 2017-03-29 大连民族大学 一种紫外光探测器及其制备方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
《High-Performance and Ultra-Stable Lithium-Ion Batteries Based on MOF-Derived ZnO@ZnO Quantum Dots/C Core–Shell Nanorod Arrays on a Carbon Cloth Anode》;Guanhua Zhang et al.;《Advanced Materials》;20151231;第27卷;2400-2405
《Synthesis of Core/Shell Nanowires Using Doped ZnO Targets》;Daisuke Nakamura et al.;《Journal of Laser Micro/Nanoengineering》;20121231;第7卷(第1期);109-111

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