CN1072733C - 磁光合金溅射靶 - Google Patents

磁光合金溅射靶 Download PDF

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Publication number
CN1072733C
CN1072733C CN94194332A CN94194332A CN1072733C CN 1072733 C CN1072733 C CN 1072733C CN 94194332 A CN94194332 A CN 94194332A CN 94194332 A CN94194332 A CN 94194332A CN 1072733 C CN1072733 C CN 1072733C
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CN
China
Prior art keywords
target
rare earth
transition metal
alloy
intermetallic compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN94194332A
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English (en)
Chinese (zh)
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CN1136331A (zh
Inventor
丹尼尔·R·马克斯
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Materials Research Corp
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Materials Research Corp
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Expired - Fee Related legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/047—Making non-ferrous alloys by powder metallurgy comprising intermetallic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
    • G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
    • G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
    • G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
    • G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
    • G11B11/10586—Record carriers characterised by the selection of the material or by the structure or form characterised by the selection of the material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24306—Metals or metalloids transition metal elements of groups 3-10

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
CN94194332A 1993-12-02 1994-11-22 磁光合金溅射靶 Expired - Fee Related CN1072733C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/161,143 US5439500A (en) 1993-12-02 1993-12-02 Magneto-optical alloy sputter targets
US161143 1993-12-02

Publications (2)

Publication Number Publication Date
CN1136331A CN1136331A (zh) 1996-11-20
CN1072733C true CN1072733C (zh) 2001-10-10

Family

ID=22579992

Family Applications (1)

Application Number Title Priority Date Filing Date
CN94194332A Expired - Fee Related CN1072733C (zh) 1993-12-02 1994-11-22 磁光合金溅射靶

Country Status (10)

Country Link
US (1) US5439500A (enExample)
EP (1) EP0730669B1 (enExample)
JP (2) JP3662251B2 (enExample)
KR (1) KR100351778B1 (enExample)
CN (1) CN1072733C (enExample)
AU (1) AU1211095A (enExample)
CA (1) CA2174433C (enExample)
DE (1) DE69425833T2 (enExample)
TW (1) TW251320B (enExample)
WO (1) WO1995015407A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3098204B2 (ja) * 1997-03-07 2000-10-16 ティーディーケイ株式会社 光磁気記録用合金ターゲット、その製造方法およびその再生方法
US5989673A (en) * 1997-06-30 1999-11-23 Sony Corporation Caromium-tantalum oxides (Cr-TaOx), sputtering targets and thin film seedlayer/sublayers for thin film magnetic recording media
US6010583A (en) * 1997-09-09 2000-01-04 Sony Corporation Method of making unreacted metal/aluminum sputter target
US6183686B1 (en) 1998-08-04 2001-02-06 Tosoh Smd, Inc. Sputter target assembly having a metal-matrix-composite backing plate and methods of making same
US7153468B2 (en) * 2000-08-18 2006-12-26 Honeywell International Inc. Physical vapor deposition targets and methods of formation
US20070099332A1 (en) * 2005-07-07 2007-05-03 Honeywell International Inc. Chalcogenide PVD components and methods of formation
US20080112878A1 (en) * 2006-11-09 2008-05-15 Honeywell International Inc. Alloy casting apparatuses and chalcogenide compound synthesis methods
JP5198925B2 (ja) * 2008-04-10 2013-05-15 三井金属鉱業株式会社 スパッタリングターゲット
US11149343B2 (en) * 2015-05-28 2021-10-19 Materion Corporation Processes for refurbishing a spent sputtering target
CN105803406B (zh) * 2016-03-14 2019-04-09 无锡舒玛天科新能源技术有限公司 一种磁光记录介质镀膜用稀土过渡合金旋转靶材的制备方法及其制备靶材
CN107449648B (zh) * 2017-06-30 2019-09-27 中国科学院广州地球化学研究所 一种适用于二次离子质谱仪分析的矿石矿物的样品靶的制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3738738C1 (en) * 1987-11-14 1989-01-26 Degussa Powder-metallurgical process for producing targets
US5098649A (en) * 1987-04-20 1992-03-24 Hitachi Metals, Ltd. Rare earth metal-iron group metal target, alloy powder therefor and method of producing same

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615911A (en) * 1969-05-16 1971-10-26 Bell Telephone Labor Inc Sputtered magnetic films
US3856579A (en) * 1972-12-04 1974-12-24 Battelle Development Corp Sputtered magnetic materials comprising rare-earth metals and method of preparation
US4367257A (en) * 1980-04-16 1983-01-04 Fuji Photo Film Co., Ltd. Thin magnetic recording medium
JPS60230903A (ja) * 1984-05-01 1985-11-16 Daido Steel Co Ltd 合金タ−ゲツトの製造方法
US4620872A (en) * 1984-10-18 1986-11-04 Mitsubishi Kinzoku Kabushiki Kaisha Composite target material and process for producing the same
JPH0673197B2 (ja) * 1985-02-25 1994-09-14 株式会社東芝 光磁気記録媒体とその製造方法
JPS6270550A (ja) * 1985-09-20 1987-04-01 Mitsubishi Metal Corp タ−ゲツト材
FR2601175B1 (fr) * 1986-04-04 1993-11-12 Seiko Epson Corp Cible de pulverisation cathodique et support d'enregistrement utilisant une telle cible.
JPH0766584B2 (ja) * 1986-04-11 1995-07-19 富士写真フイルム株式会社 光磁気記録媒体の製造方法
JPS6324030A (ja) * 1986-06-26 1988-02-01 Res Dev Corp Of Japan 異方性希土類磁石材料およびその製造方法
DE3627775A1 (de) * 1986-08-16 1988-02-18 Demetron Verfahren zur herstellung von targets
JPS63274763A (ja) * 1987-04-30 1988-11-11 Sumitomo Metal Mining Co Ltd 光磁気記録用合金タ−ゲツト
JPS63274764A (ja) * 1987-04-30 1988-11-11 Sumitomo Metal Mining Co Ltd 光磁気記録用合金タ−ゲツト
JP2673807B2 (ja) * 1987-10-30 1997-11-05 パイオニア株式会社 光磁気記録媒体の製造方法
DE3800449A1 (de) * 1988-01-09 1989-07-20 Leybold Ag Verfahren und einrichtung zur herstellung magnetooptischer, speicher- und loeschfaehiger datentraeger
US4824481A (en) * 1988-01-11 1989-04-25 Eaastman Kodak Company Sputtering targets for magneto-optic films and a method for making
US4885134A (en) * 1988-08-22 1989-12-05 Eastman Kodak Company Sputtering target and method of preparing the same
JPH0784656B2 (ja) * 1988-10-15 1995-09-13 住友金属鉱山株式会社 光磁気記録用合金ターゲット
DE3935698C2 (de) * 1988-10-26 1995-06-22 Sumitomo Metal Mining Co Legierungstarget für die Herstellung eines magneto-optischen Aufzeichnungsmediums

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5098649A (en) * 1987-04-20 1992-03-24 Hitachi Metals, Ltd. Rare earth metal-iron group metal target, alloy powder therefor and method of producing same
DE3738738C1 (en) * 1987-11-14 1989-01-26 Degussa Powder-metallurgical process for producing targets

Also Published As

Publication number Publication date
KR100351778B1 (ko) 2002-12-26
AU1211095A (en) 1995-06-19
JPH09506141A (ja) 1997-06-17
EP0730669A1 (en) 1996-09-11
DE69425833T2 (de) 2001-03-29
JP3662251B2 (ja) 2005-06-22
US5439500A (en) 1995-08-08
CA2174433A1 (en) 1995-06-08
EP0730669B1 (en) 2000-09-06
WO1995015407A1 (en) 1995-06-08
CN1136331A (zh) 1996-11-20
CA2174433C (en) 2004-07-20
JP2005171380A (ja) 2005-06-30
DE69425833D1 (de) 2000-10-12
KR960705957A (ko) 1996-11-08
TW251320B (enExample) 1995-07-11

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