CN1072529A - 数据传输电路 - Google Patents

数据传输电路 Download PDF

Info

Publication number
CN1072529A
CN1072529A CN92112356A CN92112356A CN1072529A CN 1072529 A CN1072529 A CN 1072529A CN 92112356 A CN92112356 A CN 92112356A CN 92112356 A CN92112356 A CN 92112356A CN 1072529 A CN1072529 A CN 1072529A
Authority
CN
China
Prior art keywords
input
bit line
line
linked
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN92112356A
Other languages
English (en)
Chinese (zh)
Inventor
柳承汶
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN1072529A publication Critical patent/CN1072529A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/1084Data input buffers, e.g. comprising level conversion circuits, circuits for adapting load
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1057Data output buffers, e.g. comprising level conversion circuits, circuits for adapting load
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
CN92112356A 1991-10-25 1992-10-24 数据传输电路 Pending CN1072529A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR18833/91 1991-10-25
KR1019910018833A KR930008857A (ko) 1991-10-25 1991-10-25 데이타 전송 회로

Publications (1)

Publication Number Publication Date
CN1072529A true CN1072529A (zh) 1993-05-26

Family

ID=19321776

Family Applications (1)

Application Number Title Priority Date Filing Date
CN92112356A Pending CN1072529A (zh) 1991-10-25 1992-10-24 数据传输电路

Country Status (7)

Country Link
JP (1) JPH0713869B2 (ja)
KR (1) KR930008857A (ja)
CN (1) CN1072529A (ja)
DE (1) DE4235176A1 (ja)
FR (1) FR2683077A1 (ja)
GB (1) GB2260839A (ja)
IT (1) IT1255903B (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69333909T2 (de) 1992-11-12 2006-07-20 Promos Technologies, Inc. Leseverstärker mit lokalen Schreibtreibern
JP2004095017A (ja) * 2002-08-30 2004-03-25 Fujitsu Ltd センスアンプ
US8796863B2 (en) * 2010-02-09 2014-08-05 Samsung Electronics Co., Ltd. Semiconductor memory devices and semiconductor packages

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02246516A (ja) * 1989-03-20 1990-10-02 Hitachi Ltd 半導体装置
JPH03283179A (ja) * 1990-03-30 1991-12-13 Fujitsu Ltd 半導体記憶装置

Also Published As

Publication number Publication date
ITMI922419A0 (it) 1992-10-22
JPH0713869B2 (ja) 1995-02-15
JPH05210968A (ja) 1993-08-20
ITMI922419A1 (it) 1994-04-22
GB9222496D0 (en) 1992-12-09
IT1255903B (it) 1995-11-17
DE4235176A1 (de) 1993-04-29
FR2683077A1 (fr) 1993-04-30
KR930008857A (ko) 1993-05-22
GB2260839A (en) 1993-04-28

Similar Documents

Publication Publication Date Title
US5999439A (en) Ferroelectric memory using ferroelectric reference cells
KR950000958B1 (ko) 반도체 메모리 회로
US4533843A (en) High performance dynamic sense amplifier with voltage boost for row address lines
US5299157A (en) Semiconductor memories with serial sensing scheme
EP0398245A3 (en) Dynamic type random-access memory
IE51239B1 (en) A semiconductor memory device
EP0499478A2 (en) Semiconductor memory unit array
EP0388176B1 (en) Semiconductor memory device
JPH0836885A (ja) ダイナミックランダムアクセスメモリ
GB2264376A (en) Bit line control in a semiconductor memory device
US5361233A (en) Semiconductor memory apparatus
EP0449204B1 (en) Dynamic type semiconductor memory device
US6049493A (en) Semiconductor memory device having a precharge device
EP0048464B1 (en) Semiconductor memory device
JPS5894188A (ja) 増幅装置
EP0454061B1 (en) Dynamic random access memory device with improved power supply system for speed-up of rewriting operation on data bits read-out from memory cells
US5406512A (en) Semiconductor memory device using compensation capacitors
EP0398244A2 (en) Dynamic type random-acces memory
TW394954B (en) Semiconductor memory device
KR950014256B1 (ko) 낮은 전원전압을 사용하는 반도체 메모리장치
US5835403A (en) Multiplication of storage capacitance in memory cells by using the Miller effect
US4287576A (en) Sense amplifying system for memories with small cells
US5563831A (en) Timing reference circuit for bitline precharge in memory arrays
CN1072529A (zh) 数据传输电路
US5777934A (en) Semiconductor memory device with variable plate voltage generator

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C01 Deemed withdrawal of patent application (patent law 1993)
WD01 Invention patent application deemed withdrawn after publication