CN107221522A - High yield rectifying device - Google Patents

High yield rectifying device Download PDF

Info

Publication number
CN107221522A
CN107221522A CN201710372566.0A CN201710372566A CN107221522A CN 107221522 A CN107221522 A CN 107221522A CN 201710372566 A CN201710372566 A CN 201710372566A CN 107221522 A CN107221522 A CN 107221522A
Authority
CN
China
Prior art keywords
lead bar
bending section
weld zone
area
welding ends
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710372566.0A
Other languages
Chinese (zh)
Inventor
何洪运
程琳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Good Ark Electronics Co Ltd
Original Assignee
Suzhou Good Ark Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou Good Ark Electronics Co Ltd filed Critical Suzhou Good Ark Electronics Co Ltd
Priority to CN201710372566.0A priority Critical patent/CN107221522A/en
Publication of CN107221522A publication Critical patent/CN107221522A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/37Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/49Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/4005Shape
    • H01L2224/4009Loop shape
    • H01L2224/40091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401Disposition
    • H01L2224/40105Connecting bonding areas at different heights
    • H01L2224/40106Connecting bonding areas at different heights the connector being orthogonal to a side surface of the semiconductor or solid-state body, e.g. parallel layout
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401Disposition
    • H01L2224/40151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40153Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
    • H01L2224/40175Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being metallic
    • H01L2224/40177Connecting the strap to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401Disposition
    • H01L2224/40151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49107Connecting at different heights on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73221Strap and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/83801Soldering or alloying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/8438Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/84385Shape, e.g. interlocking features
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848Bonding techniques
    • H01L2224/84801Soldering or alloying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/84Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
  • Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
  • Rectifiers (AREA)

Abstract

A kind of high yield rectifying device of the present invention, its first lead bar other end is the first pin area, the first pin area of the first lead bar as the rectifier electric current transmission end;Described second lead bar one end is weld zone, and the second lead bar other end is second pin area, the second pin area of the second lead bar as the rectifier electric current transmission end;The first welding ends positioned at the first bending section end is electrically connected with the diode chip for backlight unit other end by solder(ing) paste, electrically connected between the second welding ends and the weld zone of the second lead bar of the second bending section end by solder(ing) paste, the length of second bending section is more than the first bending section, so that the first welding ends is higher than the second welding ends, the side of weld zone two is provided with side block block, and the weld zone end of this second lead bar is provided with terminal block block.The present invention realizes purpose to greatest extent using chip area and reduction chip cost, it is to avoid connection sheet off normal, which causes the tie point in connection sheet to deflect away from chip weld zone, in stove welding process is entered causes product electrical property failure.

Description

High yield rectifying device
Technical field
The present invention relates to a kind of device, more particularly to a kind of high yield rectifying device.
Background technology
Rectification/voltage-stabilizing device is widely used in the charger of household electrical appliances, office, Communication Equipment, the module such as power supply;Small-signal two Pole pipe product chips size is minimum, only 0.4mm or so, it is difficult to realize that connection sheet process lot is produced.Wire bond structure is typically used Gold thread and elargol, cost are higher, and routing technique process is complicated, inefficiency.Current small-signal diode product is usually to beat , there is low process efficiency in cable architecture, the drawback such as cost is higher.Because chip size is minimum, connection sheet structural manufacturing process difficulty is high, It is difficult to batch production.
When designing and developing connection sheet structural semiconductor product, in order to utilize chip area to greatest extent, generally even Contact pin is amplified to suitable with chip weld zone area with the connection spot size of chip.Thus the problem of bringing be, to connection sheet with The relative position precision of chip requires very high.Existing connection sheet position limiting structure is typically only capable to spacing in one direction, it is difficult to Reach technological requirement.Existing connection sheet structural semiconductor product is generally to connection sheet infinite place or using simple groove structure limit Position, its shortcoming is direction can only be done to connection sheet spacing, and spacing purpose is to avoid connecting in stove welding process is entered Contact pin off normal, which causes the tie point in connection sheet to deflect away from chip weld zone, causes product electrical property failure.
The content of the invention
It is an object of the present invention to provide a kind of high yield rectifying device, the high yield rectifying device its use specific connection sheet Instead of the scheme of existing 0.4mm sizes and following chip by gold thread and elargol, solved from technological design due to Solder consumption is minimum, poor and low precision the technical problem of solder distribution stability.
To reach above-mentioned purpose, the technical solution adopted by the present invention is:A kind of high yield rectifying device, including:First draws Lines, the second lead bar, connection sheet and diode chip for backlight unit, the first lead bar one end is the support being connected with diode chip for backlight unit Area, described diode chip for backlight unit one end is electrically connected by solder(ing) paste with the Support, and the first lead bar other end is the first pin area, First pin area of the first lead bar as the rectifier electric current transmission end;
Described second lead bar one end is weld zone, and the second lead bar other end is second pin area, the second lead bar Second pin area is as the electric current transmission end of the rectifier, and the size of the diode chip for backlight unit is 0.3 ~ 1mm;
Slab region, step sector and expanded letter area are followed successively by between the connection sheet two ends, the width in the expanded letter area is at least bar shaped 3 times of the width in area, the slab region end has the first downward bending section, and expanded letter area end has downward second Bending section;
The first welding ends positioned at the first bending section end is electrically connected with the diode chip for backlight unit other end by solder(ing) paste, positioned at second Electrically connected between second welding ends of bending section end and the weld zone of the second lead bar by solder(ing) paste, second bending section Length be more than the first bending section so that the first welding ends be higher than the second welding ends, the side of weld zone two is respectively provided with There is side block block, the weld zone end of this second lead bar is provided with terminal block block;First bending section and step sector angle are 90 ° ~ 110 °, second bending section and step sector angle are 100 °.
Because above-mentioned technical proposal is used, the present invention has following advantages and effect compared with prior art:
The high yield rectifying device of the present invention, it uses specific connection sheet to instead of existing 0.4mm sizes and following chip By the scheme of gold thread and elargol, solved from technological design because solder consumption is minimum, solder distribution stability is poor and essence Spend the technical problem of difference;Secondly, its connection sheet is connected with the second lead bar by specific structure, realize to connection sheet X, Y both directions are spacing while do spacing to connection sheet corner, reached high-precision spacing requirement, and realization is utilized to greatest extent The purpose of chip area and reduction chip cost, it is to avoid connection sheet off normal causes the connection in connection sheet in stove welding process is entered Point, which deflects away from chip weld zone, causes product electrical property failure, so as to substantially increase yield.
Brief description of the drawings
Accompanying drawing 1 is existing small-signal diode device structure schematic diagram;
Accompanying drawing 2 is the present invention looks up structural representation of accompanying drawing 2;
Accompanying drawing 3 is high yield rectifying device structural representation of the invention;
Accompanying drawing 4 is the present invention looks up structural representation of accompanying drawing 3;
Accompanying drawing 5 is the partial structural diagram of accompanying drawing 3.
In the figures above:1st, the first lead bar;11st, the first pin area;12nd, Support;2nd, the second lead bar;21st, second Pin area;22nd, weld zone;3rd, connection sheet;31st, slab region;32nd, step sector;33rd, expanded letter area;4th, diode chip for backlight unit;5th, first is curved Pars convoluta;51st, the first welding ends;6th, the second bending section;61st, the second welding ends;7th, side block block;8th, terminal block block.
Embodiment
Below in conjunction with the accompanying drawings and embodiment the invention will be further described:
Embodiment:A kind of high yield rectifying device, including:First lead bar 1, the second lead bar 2, connection sheet 3 and diode core Piece 4, the one end of the first lead bar 1 is the Support 12 being connected with diode chip for backlight unit 4, and described one end of diode chip for backlight unit 4 passes through weldering Tin cream is electrically connected with the Support 12, and the other end of the first lead bar 1 is the first pin area 11, and the first of the first lead bar 1 draws Pin area 11 as the rectifier electric current transmission end;
Described one end of second lead bar 2 is weld zone 22, and the other end of the second lead bar 2 is second pin area 21, and this second draws The second pin area 21 of lines 2 is as the electric current transmission end of the rectifier, and the size of the diode chip for backlight unit 4 is 0.3 ~ 1mm;
Slab region 31, step sector 32 and expanded letter area 33 are followed successively by between the two ends of connection sheet 3, the width in the expanded letter area 33 is extremely It is 3 times of the width of slab region 31 less, the end of slab region 31 has the first downward bending section 5, the end of expanded letter area 33 End is with the second downward bending section 6;
The first welding ends 51 positioned at the end of the first bending section 5 is electrically connected with the other end of diode chip for backlight unit 4 by solder(ing) paste, is located at Electrically connected between second welding ends 61 of the end of the second bending section 6 and the weld zone 22 of the second lead bar 2 by solder(ing) paste, it is described The length of second bending section 6 is more than the first bending section 5, so that the first welding ends 51 is higher than the second welding ends 61, the weldering Connect 22 liang of area side and be provided with side block block 7, the end of weld zone 22 of this second lead bar 2 is provided with terminal block block 8.
Above-mentioned first bending section 5 and the angle of step sector 32 are 100 °, and second bending section 6 is with the angle of step sector 32 100°。
During using above-mentioned high yield rectifying device, its use specific connection sheet instead of existing 0.4mm sizes and with Under chip by the scheme of gold thread and elargol, solved from technological design because solder consumption is minimum, solder distribution is stable Property difference and low precision technical problem;Secondly, its connection sheet is connected with the second lead bar by specific structure, is realized to even Contact pin is spacing while do spacing to connection sheet corner in X, Y both direction, has reached high-precision spacing requirement, has realized maximum limit The utilization chip area of degree and the purpose of reduction chip cost, it is to avoid connection sheet off normal causes connection sheet in stove welding process is entered On tie point deflect away from chip weld zone and cause product electrical property failure, so as to substantially increase yield.
The above embodiments merely illustrate the technical concept and features of the present invention, and its object is to allow person skilled in the art Scholar can understand present disclosure and implement according to this, and it is not intended to limit the scope of the present invention.It is all according to the present invention The equivalent change or modification that Spirit Essence is made, should all be included within the scope of the present invention.

Claims (1)

1. a kind of high yield rectifying device, including:First lead bar(1), the second lead bar(2), connection sheet(3)With diode core Piece(4), the first lead bar(1)One end is and diode chip for backlight unit(4)The Support of connection(12), the diode chip for backlight unit(4) One end passes through solder(ing) paste and the Support(12)Electrical connection, the first lead bar(1)The other end is the first pin area(11), this first Lead bar(1)The first pin area(11)It is used as the electric current transmission end of the rectifier;
The second lead bar(2)One end is weld zone(22), the second lead bar(2)The other end is second pin area(21), The second lead bar(2)Second pin area(21)It is used as the electric current transmission end of the rectifier, the diode chip for backlight unit(4)'s Size is 0.3 ~ 1mm;It is characterized in that:
The connection sheet(3)Slab region is followed successively by between two ends(31), step sector(32)With expanded letter area(33), the expanded letter area (33)Width be at least slab region(31)3 times of width, the slab region(31)End has the first downward bending section (5), the expanded letter area(33)End has the second downward bending section(6);
Positioned at the first bending section(5)First welding ends of end(51)With diode chip for backlight unit(4)The other end is electrically connected by solder(ing) paste Connect, positioned at the second bending section(6)Second welding ends of end(61)With the second lead bar(2)Weld zone(22)Between pass through weldering Tin cream is electrically connected, second bending section(6)Length be more than the first bending section(5), so that the first welding ends(51)It is high In the second welding ends(61), the weld zone(22)Two sides are provided with side block block(7), this second lead bar(2)Welding Area(22)End is provided with terminal block block(8);First bending section(5)With step sector(32)Angle is 90 ° ~ 110 °, described Two bending sections(6)With step sector(32)Angle is 100 °.
CN201710372566.0A 2015-01-19 2015-01-19 High yield rectifying device Pending CN107221522A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710372566.0A CN107221522A (en) 2015-01-19 2015-01-19 High yield rectifying device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201510023952.XA CN104617073B (en) 2015-01-19 2015-01-19 Diode component for small-signal
CN201710372566.0A CN107221522A (en) 2015-01-19 2015-01-19 High yield rectifying device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201510023952.XA Division CN104617073B (en) 2015-01-19 2015-01-19 Diode component for small-signal

Publications (1)

Publication Number Publication Date
CN107221522A true CN107221522A (en) 2017-09-29

Family

ID=53151451

Family Applications (4)

Application Number Title Priority Date Filing Date
CN201710378170.7A Active CN107293530B (en) 2015-01-19 2015-01-19 High-precision high-yield rectifier device
CN201510023952.XA Active CN104617073B (en) 2015-01-19 2015-01-19 Diode component for small-signal
CN201710372568.XA Pending CN107204319A (en) 2015-01-19 2015-01-19 Small-signal voltage stabilizing semiconductor devices
CN201710372566.0A Pending CN107221522A (en) 2015-01-19 2015-01-19 High yield rectifying device

Family Applications Before (3)

Application Number Title Priority Date Filing Date
CN201710378170.7A Active CN107293530B (en) 2015-01-19 2015-01-19 High-precision high-yield rectifier device
CN201510023952.XA Active CN104617073B (en) 2015-01-19 2015-01-19 Diode component for small-signal
CN201710372568.XA Pending CN107204319A (en) 2015-01-19 2015-01-19 Small-signal voltage stabilizing semiconductor devices

Country Status (1)

Country Link
CN (4) CN107293530B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109461711A (en) * 2018-10-30 2019-03-12 格力电器(合肥)有限公司 Optical coupler device and apparatus including the same

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104617156B (en) * 2015-01-19 2017-10-13 苏州固锝电子股份有限公司 Rectification chip for microelectronic component
CN109003947A (en) * 2018-07-23 2018-12-14 苏州锝耀电子有限公司 High-power stacked core chip architecture
CN109065516B (en) * 2018-07-23 2020-07-21 苏州锝耀电子有限公司 High-power chip packaging production method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN203118937U (en) * 2013-02-01 2013-08-07 苏州固锝电子股份有限公司 Semiconductor encapsulation structure convenient to position
CN103383932A (en) * 2013-07-12 2013-11-06 苏州固锝电子股份有限公司 Packaging structure for improving electrical performance of chip

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6740951B2 (en) * 2001-05-22 2004-05-25 General Semiconductor, Inc. Two-mask trench schottky diode
CN201466961U (en) * 2009-06-10 2010-05-12 常州银河电器有限公司 rectifier
CN203118995U (en) * 2013-02-01 2013-08-07 苏州固锝电子股份有限公司 Anti-pore diode device
CN203118997U (en) * 2013-02-01 2013-08-07 苏州固锝电子股份有限公司 Anti-offset diode device
CN204441276U (en) * 2015-01-19 2015-07-01 苏州固锝电子股份有限公司 For the diode component of small-signal

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN203118937U (en) * 2013-02-01 2013-08-07 苏州固锝电子股份有限公司 Semiconductor encapsulation structure convenient to position
CN103383932A (en) * 2013-07-12 2013-11-06 苏州固锝电子股份有限公司 Packaging structure for improving electrical performance of chip

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109461711A (en) * 2018-10-30 2019-03-12 格力电器(合肥)有限公司 Optical coupler device and apparatus including the same

Also Published As

Publication number Publication date
CN107204319A (en) 2017-09-26
CN107293530A (en) 2017-10-24
CN107293530B (en) 2020-03-24
CN104617073A (en) 2015-05-13
CN104617073B (en) 2018-02-02

Similar Documents

Publication Publication Date Title
CN107221522A (en) High yield rectifying device
CN106449538A (en) Surface-mounting type rectifier structure
CN101630676B (en) Novel isolated gate bipolar transistor module distributed with direct coated copper base plates
CN202796921U (en) Power module electrode terminal
CN104617156B (en) Rectification chip for microelectronic component
CN204441276U (en) For the diode component of small-signal
CN203013742U (en) Front-side electrode of solar battery
CN202120903U (en) Half-bridge power module
CN204441274U (en) There is the diode component of Novel connection contact pin
CN203118997U (en) Anti-offset diode device
CN203085983U (en) Connecting metal fitting between circuit breaker and pipe busbar
CN209199876U (en) Patch electronics components
CN202523700U (en) AAP power module
CN204204843U (en) Chip package structure
KR102231903B1 (en) Joining apparatus for solar cell and ribbon
CN104900620A (en) PCB fixing structure of plastic-packaging type IPM and fixing method thereof
CN209981205U (en) High heat dissipation plug-in components diode
CN203218229U (en) Copper wire bonding structure between chip pad points
CN204464265U (en) The encapsulating structure of high reliability rectification chip
CN103000724B (en) A kind of photovoltaic cell protection module
CN205811862U (en) Synchronous rectifier
CN205122573U (en) Novel semiconductor device assembly structure
CN206742252U (en) Low junction temperature solar diode special welding component
CN101013691A (en) Insulated gate bipolar transistor module
CN205987382U (en) Sound electric power switching device's coil terminal

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20170929