CN107204387B - 一种制备hit太阳能电池导电栅线的撕膜方法 - Google Patents

一种制备hit太阳能电池导电栅线的撕膜方法 Download PDF

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CN107204387B
CN107204387B CN201610149484.5A CN201610149484A CN107204387B CN 107204387 B CN107204387 B CN 107204387B CN 201610149484 A CN201610149484 A CN 201610149484A CN 107204387 B CN107204387 B CN 107204387B
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倪鹏玉
王树林
游文诚
李德辉
张明全
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Abstract

本发明公开了一种制备HIT太阳能电池导电栅线的撕膜方法,包括如下步骤:在硅片的上表面和下表面贴上一层感光膜,感光膜上设有保护膜;感光膜上与硅片接触的部分为曝光区,在曝光区向外延伸设一段缓冲区,其余为非缓冲区;将与硅片尺寸相对应区域的感光膜的曝光区和非缓冲区进行曝光;裁切掉缓冲区范围之外的一段区域;撕掉感光膜表面上的保护膜。本发明曝光后的感光膜韧性变小,且曝光后的感光膜与保护膜之间的粘附力也变小,有利于撕膜,保护膜很容易撕开,缓冲区未曝光区域感光膜韧性比较好,不易被撕裂,使得曝光的感光膜的刀口裁切处更容易撕膜且不会因为裁切口的锯齿状产生裂缝而延伸至硅片表面,不会对曝光图形产生影响。

Description

一种制备HIT太阳能电池导电栅线的撕膜方法
技术领域
本发明涉及太阳能电池领域,尤其涉及一种制备HIT太阳能电池导电栅线的撕膜方法。
背景技术
HIT太阳能电池是一种利用晶体硅基板和非晶硅薄膜制成的混合型太阳能电池,相对传统单/多晶硅电池,有更高的发电效率,更好的稳定性和更低的成本。
HIT太阳能电池的高电导栅线制备工艺包括:贴膜、曝光显影、金属成栅等工序,其中贴膜时硅片感光膜表面有一层保护膜,在曝光后显影前需要撕掉。如图1所示,传统的硅片贴膜方法是在硅片201的上表面和下表面通过贴膜机贴上表面有一层保护膜202的感光膜203。
撕膜工艺按照如图2所示的硅片201尺寸K1、K2相对应的区域的感光膜203按照工艺要求进行曝光,K1、K2以外部分不曝光,然后用裁切机构裁切掉K3、K4以外的区域,再经过撕膜机构撕掉感光膜203表面的保护膜202。
上述撕膜方法由于裁切机构刀口裁切处为未曝光的感光膜,未曝光的感光膜203与保护膜202粘附力较大,不易把保护膜202从感光膜203表面撕掉,容易将未曝光的感光膜203裁切成如图3的锯齿状,在撕保护膜202时,感光膜203容易因裁切口的锯齿状204产生裂缝并延伸至硅片表面,从而影响硅片表面曝光图形,影响太阳能电池片的生产良率和制备质量。
发明内容
针对上述问题,本发明提供了一种制备HIT太阳能电池导电栅线的撕膜方法,解决了未曝光的感光膜由于裁切成锯齿状,撕保护膜时,感光膜容易因裁切口的锯齿状产生裂缝并延伸至硅片表面,从而影响硅片表面曝光图形,影响太阳能电池片的生产良率和制备质量。
为解决上述技术问题,本发明所采用的技术方案是:在硅片的上表面和下表面贴上一层感光膜,感光膜上设有保护膜;感光膜上与硅片接触的部分为曝光区,在曝光区向外延伸设一段缓冲区,其余为非缓冲区;将与硅片尺寸相对应区域的感光膜的曝光区和非缓冲区进行曝光;裁切掉缓冲区范围之外的一段区域;撕掉感光膜表面上的保护膜。
进一步的,所述步骤在硅片的上表面和下表面贴上一层保护膜和感光膜通过贴膜机进行。
进一步的,所述保护膜为PE膜。
进一步的,所述步骤撕掉感光膜表面上的保护膜为:撕掉贴在缓冲区和缓冲区之内的保护膜。
进一步的,所述缓冲区不曝光。
由上述对本发明的描述可知,和现有技术相比,本发明具有如下优点:本发明一种制备HIT太阳能电池导电栅线的撕膜方法,曝光后的感光膜韧性变小,且曝光后的感光膜与保护膜之间的粘附力也变小,有利于撕膜,保护膜很容易撕开,缓冲区未曝光区域感光膜韧性比较好,不易被撕裂,使得曝光的感光膜的刀口裁切处更容易撕膜且不会因为裁切口的锯齿状产生裂缝而延伸至硅片表面,不会对曝光图形产生影响,提高HIT太阳能电池的制备质量,提高光电转换效率及生产良率。
附图说明
构成本申请的一部分的附图用来提供对本发明的进一步理解,本发明的示意性实施例及其说明用于解释本发明,并不构成对本发明的不当限定。在附图中:
图1为传统方法硅片贴膜片示意图;
图2为传统方法硅片贴膜片曝光剖面示意图;
图3为传统硅片贴膜片撕膜脚示意图;
图4为本发明硅片贴膜片示意图;
图5为本发明贴膜片曝光剖面示意图;
图6为本发明硅片贴膜片撕膜脚示意图。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白,以下结合附图及实施例,对本发明进行进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。
实施例
如图4-6所示,在硅片301的上表面和下表面贴上一层感光膜303,感光膜303上设有保护膜302;感光膜302与硅片301接触的部分为曝光区,在曝光区向外延伸设一段缓冲区,其余为非缓冲区;将与硅片301尺寸相对应区域的感光膜303的曝光区和非缓冲区进行曝光;裁切掉缓冲区范围之外的一段区域;撕掉感光膜303表面上的保护膜302。
如图5所示,曝光区为K11、K22所示的区域、缓冲区为K5、K6所示的区域、非缓冲区为K5、K6向外延伸到的区域,图5中K7、K8区域为裁切区域。上述由于曝光后的感光膜303韧性变小,且曝光后的感光膜303与保护膜302之间的粘附力也变小,有利于撕膜,所以保护膜302很容易撕开,一旦保护膜被撕起一个开口,后面无论是否曝光,保护膜302都很容易撕开。
而缓冲区对应的区域为未曝光区域,该区域感光膜303韧性比较好,不易被撕裂,使得曝光的感光膜303的刀口裁切处更容易撕膜且不会因为裁切口的锯齿状304产生裂缝而延伸至硅片表面,不会对曝光图形产生影响。本发明通过改善硅片贴膜片的撕膜工艺,使得曝光的感光膜的刀口裁切处更容易撕膜,对于提高HIT太阳能电池的制备质量,提高光电转换效率及生产良率有着重大意义。
如图6所示本发明使得曝光的感光膜303的刀口裁切处更容易撕膜且不会因为裁切口的锯齿状产生裂缝而延伸至硅片表面,不会对曝光图形产生影响。
以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明的保护范围之内。

Claims (4)

1.一种制备HIT太阳能电池导电栅线的撕膜方法,其特征在于:所述撕膜方法包括如下步骤:
在硅片的上表面和下表面贴上一层感光膜,感光膜上设有保护膜;感光膜上与硅片接触的部分为曝光区,在曝光区向外延伸设一段缓冲区,其余为非缓冲区;
将与硅片尺寸相对应区域的感光膜的曝光区和非缓冲区进行曝光,缓冲区不曝光;
裁切掉非缓冲区中的一段区域;
撕掉感光膜表面上的保护膜。
2.根据权利要求1所述一种制备HIT太阳能电池导电栅线的撕膜方法,其特征在于:所述步骤撕掉感光膜表面上的保护膜为:撕掉贴在缓冲区之内的保护膜。
3.根据权利要求1所述一种制备HIT太阳能电池导电栅线的撕膜方法,其特征在于:所述步骤在硅片的上表面和下表面贴上一层保护膜和感光膜通过贴膜机进行。
4.根据权利要求1或2所述一种制备HIT太阳能电池导电栅线的撕膜方法,其特征在于:所述保护膜为PE膜。
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CN101909407A (zh) * 2010-07-14 2010-12-08 深圳市深联电路有限公司 一种在铁基板上蚀刻v-cut的方法
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