CN107154272B - 电流检测电路 - Google Patents
电流检测电路 Download PDFInfo
- Publication number
- CN107154272B CN107154272B CN201610800782.6A CN201610800782A CN107154272B CN 107154272 B CN107154272 B CN 107154272B CN 201610800782 A CN201610800782 A CN 201610800782A CN 107154272 B CN107154272 B CN 107154272B
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- China
- Prior art keywords
- current
- circuit
- detection circuit
- potential
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0097—Erasing, e.g. resetting, circuits or methods
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/065—Differential amplifiers of latching type
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
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- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662302993P | 2016-03-03 | 2016-03-03 | |
US62/302993 | 2016-03-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107154272A CN107154272A (zh) | 2017-09-12 |
CN107154272B true CN107154272B (zh) | 2020-07-03 |
Family
ID=59791976
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610800782.6A Active CN107154272B (zh) | 2016-03-03 | 2016-09-02 | 电流检测电路 |
Country Status (1)
Country | Link |
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CN (1) | CN107154272B (zh) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04339268A (ja) * | 1991-05-16 | 1992-11-26 | Meidensha Corp | 光ファイバー式微少電流検出器 |
CN1385859A (zh) * | 2001-05-14 | 2002-12-18 | 惠普公司 | 利用片上检测放大器标定方法和装置的电阻交叉点存储器 |
CN1988046A (zh) * | 2005-12-22 | 2007-06-27 | 松下电器产业株式会社 | 半导体泄漏电流检测器、测定方法及其半导体集成电路 |
CN101727979B (zh) * | 2008-10-10 | 2012-12-12 | 株式会社东芝 | 半导体存储装置 |
CN104503526A (zh) * | 2014-11-19 | 2015-04-08 | 矽力杰半导体技术(杭州)有限公司 | 基于混合信号的反馈补偿电路及方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7366021B2 (en) * | 2005-05-04 | 2008-04-29 | Micron Technology, Inc. | Method and apparatus for sensing flash memory using delta sigma modulation |
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2016
- 2016-09-02 CN CN201610800782.6A patent/CN107154272B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04339268A (ja) * | 1991-05-16 | 1992-11-26 | Meidensha Corp | 光ファイバー式微少電流検出器 |
CN1385859A (zh) * | 2001-05-14 | 2002-12-18 | 惠普公司 | 利用片上检测放大器标定方法和装置的电阻交叉点存储器 |
CN1988046A (zh) * | 2005-12-22 | 2007-06-27 | 松下电器产业株式会社 | 半导体泄漏电流检测器、测定方法及其半导体集成电路 |
CN101727979B (zh) * | 2008-10-10 | 2012-12-12 | 株式会社东芝 | 半导体存储装置 |
CN104503526A (zh) * | 2014-11-19 | 2015-04-08 | 矽力杰半导体技术(杭州)有限公司 | 基于混合信号的反馈补偿电路及方法 |
Also Published As
Publication number | Publication date |
---|---|
CN107154272A (zh) | 2017-09-12 |
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Legal Events
Date | Code | Title | Description |
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Patentee before: Japanese businessman Panjaya Co.,Ltd. Address after: Tokyo, Japan Patentee after: Kaixia Co.,Ltd. Address before: Tokyo, Japan Patentee before: TOSHIBA MEMORY Corp. |
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CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220107 Address after: Tokyo, Japan Patentee after: Japanese businessman Panjaya Co.,Ltd. Address before: Tokyo, Japan Patentee before: TOSHIBA MEMORY Corp. |
|
TR01 | Transfer of patent right |