CN107153442A - It is a kind of to exhaust pipe reference circuit with what impedance was adjusted - Google Patents
It is a kind of to exhaust pipe reference circuit with what impedance was adjusted Download PDFInfo
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- CN107153442A CN107153442A CN201610118857.2A CN201610118857A CN107153442A CN 107153442 A CN107153442 A CN 107153442A CN 201610118857 A CN201610118857 A CN 201610118857A CN 107153442 A CN107153442 A CN 107153442A
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- impedance
- nmos tube
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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Abstract
Present invention offer is a kind of to exhaust pipe reference circuit with what impedance was adjusted, at least includes：Drain terminal connects the depletion type NMOS tube of supply voltage, and the source of the depletion type NMOS tube is connected with the first end of impedance, and the grid end of the depletion type NMOS tube is connected with the second end of the impedance；The enhanced NMOS tube of source ground connection, the grid end of the enhanced NMOS tube is connected after being connected with the drain terminal of the enhanced NMOS tube with the second end of the impedance, and the drain terminal of the enhanced NMOS tube is output end.The reference voltage for exhausting the output of pipe reference circuit adjusted with impedance of the present invention is temperature independent, and unrelated with supply voltage, while taking, chip area is small, technique correlation is small, precision is easy to control, suitable for actual production and uses.
Description
Technical field
It is more particularly to a kind of to exhaust pipe reference circuit with what impedance was adjusted the present invention relates to semiconductor applications.
Background technology
Reference voltage source or reference voltage typically refer to make in circuit the high stability voltage source of voltage reference.With collection
Into the development of the continuous increase of circuit scale, especially system integration technology (SOC), it also turns into extensive, ultra-large collection
The indispensable basic circuit module into circuit and nearly all digital simulator system.
During analog signal and data signal are mutually changed, reference voltage chip plays very important effect,
It provides standard for the quantization work of analog signal.In many integrated circuits and circuit unit, such as digital analog converter (DAC),
Analog-digital converter (ADC), linear voltage regulator and switching regulator, are required for accurate and stable voltage reference.Turn in digital-to-analogue
In parallel operation, DAC is selected from DC reference voltages according to the digital input signals presented on its input terminals and generation simulation is defeated
Go out；In analog-digital converter, D/C voltage benchmark is used to produce digitized output signal together with analog input signal again.In essence
Reference voltage source is often all used as systematic survey and calibration in close measuring instrument instrument and wide variety of digital communication system
Benchmark.Therefore, reference voltage source occupies critically important status in Analogous Integrated Electronic Circuits, and it directly affects electronic system
Performance and precision.
As shown in Figure 1 enhanced reference circuit, including depletion type NMOS tube 101, enhanced NMOS tube are exhausted for tradition
102, the leakage of link enhancement type NMOS tube 102 after the drain terminal connection supply voltage of depletion type NMOS tube 101, grid end are connected with source
End, the grid end of enhanced NMOS tube 102 is connected with its drain terminal, source is grounded；Depletion type NMOS tube 101 be connected into current source form to
The drain terminal of the enhanced offer of NMOS tube 102 current offset, the source of depletion type NMOS tube 101 and enhanced NMOS tube 102 is most
Whole reference output.Following relation is had according to circuit structure：
ID101=ID102 (3)
It can be obtained by relation above：
Wherein, VDFor the absolute value of the threshold voltage of depletion type NMOS tube, with positive temperature characterisitic；VTFor enhanced NMOS
The threshold voltage of pipe, with for negative temperature characteristic；ID101For the drain terminal electric current of depletion type NMOS tube；ID102For enhanced NMOS tube
Drain terminal electric current；K101For the breadth length ratio of depletion type NMOS tube；K102For the breadth length ratio of enhanced NMOS tube；VREF is the base of output
Quasi- voltage.
When depletion type NMOS tube 101 and enhanced NMOS tube 102 select appropriate breadth length ratio, VREF can be caused to obtain zero temperature
Spend the voltage (example of characteristic：K101=2 μ/120 μ, K102The μ of=2 μ/50, corresponds to certain μ technique of factory 0.5)；VREF is in same up-to-date style (4)
One and the unrelated voltage of supply voltage (VDD).To sum up when select suitable breadth length ratio can make VREF realize not with voltage and
The reference data voltage of temperature change.
But for the current relationship of depletion type NMOS tube, formula (1) is only in the drain terminal electric current I of depletion type NMOS tubeD101
Be only when smaller it is more accurate, if ID101Than larger, it may require that addition one is relevant with input voltage in formula (1)
The factor correct, so may result in final VREF is the function related to input voltage, thus can not accurately realize
The unrelated reference voltage source of voltage；So general in practical application, ID101A smaller value can be taken, is so resulted in
K101Take a smaller value, typically all can fall width-length ratio very big pipe using one realizes, while in order to ensure zero temperature
Spend characteristic, K102Also smaller value can be taken, final depletion type NMOS tube 101 and enhanced NMOS tube 102 will be wide long using falling
Ratio very big pipe, so causes the chip area of the two pipes very big.
In addition, for it is existing exhaust pipe for, realize that reference voltage source also has a comparison intractable using the structure
Problem, VDThe precision of the value is difficult control in art production process, causes VDIt is very wide with the scope of technological fluctuation.
Therefore, existing reference circuit structure how is improved, reduces chip area, improve precision as people in the art
One of member's urgent problem to be solved.
The content of the invention
The shortcoming of prior art in view of the above, with what impedance was adjusted pipe is exhausted it is an object of the invention to provide a kind of
Reference circuit, takes chip area greatly, the voltage with positive temperature coefficient is with technological fluctuation for solving metal-oxide-semiconductor in the prior art
Greatly, the problems such as precision is difficult control.
In order to achieve the above objects and other related objects, present invention offer is a kind of exhausts pipe benchmark electricity with what impedance was adjusted
Road, the pipe reference circuit that exhausts adjusted with impedance at least includes：
Drain terminal connects the depletion type NMOS tube of supply voltage, the source of the depletion type NMOS tube and the first end phase of impedance
Even, the grid end of the depletion type NMOS tube is connected with the second end of the impedance；The enhanced NMOS tube of source ground connection, the increasing
The grid end of strong type NMOS tube is connected after being connected with the drain terminal of the enhanced NMOS tube with the second end of the impedance, the enhancing
The drain terminal of type NMOS tube is output end.
Preferably, the impedance is the resistance that resistance is fixed.
Preferably, the impedance value of the impedance is variable, and the adjustment for carrying out impedance value can be trimmed by fuse.
It is highly preferred that the impedance includes a resistance string, each resistance two ends fuse in parallel, each fuse two ends connect pad,
Control fuse to blow or do not blow by pad and impedance value is adjusted with this.
Preferably, the drain terminal voltage of the enhanced NMOS tube is：
Wherein, VTFor the threshold voltage of the enhanced NMOS tube, VDFor the depletion type NMOS tube threshold voltage it is exhausted
To value, K105For the breadth length ratio of the enhanced NMOS tube, K103For the breadth length ratio of the depletion type NMOS tube, Z is the impedance
Impedance value.
It is highly preferred that the threshold voltage V of the enhanced NMOS tubeTWith negative temperature characteristic, the depletion type NMOS tube
Threshold voltage VDWith positive temperature characterisitic, by the breadth length ratio K for setting the depletion type NMOS tube103, the enhanced NMOS
The breadth length ratio K of pipe105And the impedance value Z of the impedance is temperature independent come the drain terminal voltage for realizing the enhanced NMOS tube.
As described above, the present invention's exhausts pipe reference circuit with what impedance was adjusted, have the advantages that：
The reference voltage for exhausting the output of pipe reference circuit with impedance regulation of the present invention is temperature independent, with supply voltage
Unrelated, while taking, chip area is small, technique correlation is small, precision is easy to control, suitable for actual production and uses.
Brief description of the drawings
Fig. 1 is shown as of the prior art and exhausts enhanced reference circuit schematic diagram.
Fig. 2 is shown as a kind of embodiment for exhausting pipe reference circuit adjusted with impedance of the present invention.
Fig. 3 is shown as the another embodiment for exhausting pipe reference circuit adjusted with impedance of the present invention.
Component label instructions
101 depletion type NMOS tubes
102 enhanced NMOS tubes
103 depletion type NMOS tubes
104 impedances
105 enhanced NMOS tubes
106 first resistors
107 second resistances
108 3rd resistors
Embodiment
Illustrate embodiments of the present invention below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through specific realities different in addition
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Refer to Fig. 2~Fig. 3.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, then in schema only display with relevant component in the present invention rather than according to package count during actual implement
Mesh, shape and size are drawn, and kenel, quantity and the ratio of each component can be a kind of random change during its actual implementation, and its
Assembly layout kenel may also be increasingly complex.
Embodiment one
As shown in Fig. 2 present invention offer is a kind of to exhaust pipe reference circuit, the consumption adjusted with impedance with what impedance was adjusted
Although reference circuit at least includes：
Drain terminal connection supply voltage VDD depletion type NMOS tube 103, the source of the depletion type NMOS tube 103 and impedance
104 first end is connected, and the grid end of the depletion type NMOS tube 103 is connected with the second end of the impedance 104；Source ground connection
Enhanced NMOS tube 105, the grid end of the enhanced NMOS tube 105 be connected with the drain terminal of the enhanced NMOS tube 105 after with
Second end of the impedance 104 is connected, and the drain terminal of the enhanced NMOS tube 105 is output end, output reference voltage VREF.
The impedance 104 can be any device that inhibition is played to electric current, not repeat one by one herein.In the present embodiment
In, the impedance 104 is the resistance that resistance is fixed.
Following relation is had according to circuit structure：
Obtained by relation above：
Wherein, ID103For the drain terminal electric current of depletion type NMOS tube 103, ID105For the drain terminal electric current of enhanced NMOS tube 105,
VTFor the threshold voltage of the enhanced NMOS tube 105, VDFor the absolute value of the threshold voltage of the depletion type NMOS tube 103,
K105For the breadth length ratio of the enhanced NMOS tube 105, K103For the breadth length ratio of the depletion type NMOS tube 103, Z is the impedance
104 impedance value.
According to formula (7), the threshold voltage V of the depletion type NMOS tube 103 is utilizedDPositive temperature characterisitic and described enhanced
The threshold voltage V of NMOS tube 105TNegative temperature characteristic compensation.Ignore influence in positive temperature influence Xiang Lixian first less
The unrelated item with temperatureRetain on temperature influence than larger itemAccording to the threshold voltage V of the depletion type NMOS tube 103DPositive temperature characterisitic and the enhanced NMOS tube 105
Threshold voltage VTNegative temperature characteristic (this with use technique it is relevant), first determine K105* Z value；Then further according to circuit
Required current requirements convolution (4) and formula (5) determine final suitable K103、K105And Z；So ensure reference voltage
VREF realizes temperature independence.And reference voltage V REF and supply voltage VDD are uncorrelated in formula (7), therefore the circuit also may be used
To realize power supply and the unrelated benchmark of temperature.
Contrast (1) and formula (6), tradition exhausts the drain terminal electric current I of depletion type NMOS tube in enhanced reference circuitD101It is
The threshold voltage V of depletion type NMOS tubeDQuadratic function, and the present invention with what impedance was adjusted exhausts and exhausted in pipe reference circuit
The drain terminal electric current I of type NMOS tubeD103It is the threshold voltage V of depletion type NMOS tubeDLinear function (wherein can be neglected itemIt is apparent that the leakage for exhausting depletion type NMOS tube in pipe reference circuit adjusted with impedance of the present invention
Hold electric current ID103By the threshold voltage V of depletion type NMOS tubeDInfluence it is smaller, technique correlation is smaller, is more suitable for actual production；
And from formula (6) as long as it can be found that selecting suitable impedance value Z to realize smaller ID103, so as to be better achieved
With supply voltage VDD independence, so there is no need to exhaust the pipe that width is grown in enhanced reference circuit using tradition, subtract
The area that small depletion type NMOS tube 103 and enhanced NMOS tube 105 take, preferably reduces chip cost, is more suitable for reality
Border is produced.
Embodiment two
As shown in figure 3, the present embodiment provides another implementation for exhausting pipe reference circuit adjusted with impedance of the present invention
Mode, the pipe reference circuit that exhausts adjusted with impedance at least includes：
Drain terminal connection supply voltage VDD depletion type NMOS tube 103, the source of the depletion type NMOS tube 103 and impedance
First end be connected, the grid end of the depletion type NMOS tube 103 is connected with the second end of the impedance；It is enhanced that source is grounded
NMOS tube 105, the grid end of the enhanced NMOS tube 105 be connected with the drain terminal of the enhanced NMOS tube 105 after with the resistance
The second anti-end is connected, and the drain terminal of the enhanced NMOS tube 105 is output end, output reference voltage VREF.
Difference is, realizes that impedance value is variable by FUSE (fuse) methods trimmed.In the present embodiment, the resistance
Resist for the variable resistance of resistance.Specifically, as shown in figure 3, the impedance is resistance string, including first resistor 106, second resistance
107 and 3rd resistor 108, the present embodiment is only as an example, the quantity of resistance can be done specifically according to actual needs in resistance string
Setting.Each resistance two ends fuse in parallel, impedance value is adjusted by blowing fuse or not blowing fuse.In order to save cost and true
Guarantor has resistant series between the source of the depletion type NMOS tube 103 and the drain terminal of the enhanced NMOS tube 105 all the time,
In the present embodiment, the two ends of 3rd resistor 108 fuse not in parallel, the two ends of first resistor 106 first fuse in parallel is described
The two ends of first fuse connect the first burning aluminum pad P1 and second and burn aluminum pad P2 respectively；The two ends of second resistance 107 are in parallel
Second fuse, the two ends of second fuse connect the second burning aluminum pad P2 and the 3rd and burn aluminum pad P3 respectively.Burning aluminum pad
Upper application high current, fuse can be blown by improving temperature by electromigration, if first fuse blows, and described first burns aluminum pad
Impedance is first resistor 106 between P1 and described second burns aluminum pad P2；If first fuse does not blow, described first burns aluminium
Impedance is 0 between pad P1 and described second burns aluminum pad P2.Same described second, which burns aluminum pad P2 and the described 3rd, burns aluminium weldering
Impedance between disk P3 can also take impedance 107 and 0 by blowing and not blowing two states.Trimmed using the FUSE of the program
Method, can be very good to solve the reference voltage V REF drift that process deviation is brought, at the same the FUSE trim circuit can be with
Trimmed by increasing FUSE and burn the quantity of aluminum pad and improve the scope and precision that trim.
The FUSE of the present embodiment trims the drain terminal electric current of depletion type NMOS tube, enhanced NMOS tube in circuit and embodiment one
Drain terminal electric current, reference voltage V REF relational expression it is identical, can be obtained by identical method unrelated with temperature and supply voltage
Reference voltage, do not repeat one by one herein.
As described above, the present invention's exhausts pipe reference circuit with what impedance was adjusted, have the advantages that：
The reference voltage for exhausting the output of pipe reference circuit with impedance regulation of the present invention is temperature independent, with supply voltage
Unrelated, while taking, chip area is small, technique correlation is small, precision is easy to control, suitable for actual production and uses.
In summary, present invention offer is a kind of exhausts pipe reference circuit with what impedance was adjusted, at least includes：Drain terminal connection electricity
The depletion type NMOS tube of source voltage, the source of the depletion type NMOS tube is connected with the first end of impedance, the depletion type NMOS
The grid end of pipe is connected with the second end of the impedance；The enhanced NMOS tube of source ground connection, the grid end of the enhanced NMOS tube
It is connected after being connected with the drain terminal of the enhanced NMOS tube with the second end of the impedance, the drain terminal of the enhanced NMOS tube is
Output end.The reference voltage for exhausting the output of pipe reference circuit with impedance regulation of the present invention is temperature independent, with supply voltage
Unrelated, while taking, chip area is small, technique correlation is small, precision is easy to control, suitable for actual production and uses.So, this hair
It is bright effectively to overcome various shortcoming of the prior art and have high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (6)
1. a kind of exhaust pipe reference circuit with what impedance was adjusted, it is characterised in that described to exhaust pipe benchmark electricity with what impedance was adjusted
Road at least includes：
Drain terminal connects the depletion type NMOS tube of supply voltage, and the source of the depletion type NMOS tube is connected with the first end of impedance,
The grid end of the depletion type NMOS tube is connected with the second end of the impedance；The enhanced NMOS tube of source ground connection, the enhancing
The grid end of type NMOS tube is connected after being connected with the drain terminal of the enhanced NMOS tube with the second end of the impedance, described enhanced
The drain terminal of NMOS tube is output end.
2. according to claim 1 exhaust pipe reference circuit with what impedance was adjusted, it is characterised in that：The impedance is resistance
Fixed resistance.
3. according to claim 1 exhaust pipe reference circuit with what impedance was adjusted, it is characterised in that：The impedance of the impedance
Value is variable, and the adjustment for carrying out impedance value can be trimmed by fuse.
4. according to claim 3 exhaust pipe reference circuit with what impedance was adjusted, it is characterised in that：The impedance includes one
Resistance string, each resistance two ends fuse in parallel, each fuse two ends connect pad, control fuse to blow or do not blow with this by pad
Adjust impedance value.
5. according to claim 1 exhaust pipe reference circuit with what impedance was adjusted, it is characterised in that：The enhanced NMOS
The drain terminal voltage of pipe is：
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Wherein, VTFor the threshold voltage of the enhanced NMOS tube, VDFor the depletion type NMOS tube threshold voltage it is absolute
Value, K105For the breadth length ratio of the enhanced NMOS tube, K103For the breadth length ratio of the depletion type NMOS tube, Z is the impedance
Impedance value.
6. according to claim 5 exhaust pipe reference circuit with what impedance was adjusted, it is characterised in that：The enhanced NMOS
The threshold voltage V of pipeTWith negative temperature characteristic, the threshold voltage V of the depletion type NMOS tubeDWith positive temperature characterisitic, by setting
The breadth length ratio K of the fixed depletion type NMOS tube103, the enhanced NMOS tube breadth length ratio K105And the impedance value of the impedance
Z is temperature independent come the drain terminal voltage for realizing the enhanced NMOS tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610118857.2A CN107153442A (en) | 2016-03-02 | 2016-03-02 | It is a kind of to exhaust pipe reference circuit with what impedance was adjusted |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610118857.2A CN107153442A (en) | 2016-03-02 | 2016-03-02 | It is a kind of to exhaust pipe reference circuit with what impedance was adjusted |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107153442A true CN107153442A (en) | 2017-09-12 |
Family
ID=59791782
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610118857.2A Pending CN107153442A (en) | 2016-03-02 | 2016-03-02 | It is a kind of to exhaust pipe reference circuit with what impedance was adjusted |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108155187A (en) * | 2018-01-16 | 2018-06-12 | 上海南麟电子股份有限公司 | Switching power circuit, semiconductor power device and preparation method thereof |
| CN111090296A (en) * | 2018-10-24 | 2020-05-01 | 艾普凌科有限公司 | Reference voltage circuit and power-on reset circuit |
| WO2021172001A1 (en) * | 2020-02-25 | 2021-09-02 | ローム株式会社 | Constant voltage generation circuit |
| CN114115433A (en) * | 2021-12-29 | 2022-03-01 | 苏州锴威特半导体股份有限公司 | Band gap reference circuit |
| CN115037150A (en) * | 2022-06-10 | 2022-09-09 | 西安博瑞集信电子科技有限公司 | Voltage stabilizing circuit for gallium arsenide circuit and radio frequency circuit adopting same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108155187A (en) * | 2018-01-16 | 2018-06-12 | 上海南麟电子股份有限公司 | Switching power circuit, semiconductor power device and preparation method thereof |
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| CN111090296A (en) * | 2018-10-24 | 2020-05-01 | 艾普凌科有限公司 | Reference voltage circuit and power-on reset circuit |
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| CN115104076A (en) * | 2020-02-25 | 2022-09-23 | 罗姆股份有限公司 | Constant voltage generating circuit |
| CN114115433A (en) * | 2021-12-29 | 2022-03-01 | 苏州锴威特半导体股份有限公司 | Band gap reference circuit |
| CN115037150A (en) * | 2022-06-10 | 2022-09-09 | 西安博瑞集信电子科技有限公司 | Voltage stabilizing circuit for gallium arsenide circuit and radio frequency circuit adopting same |
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