CN111427411A - Integrated output circuit capable of being used for adjusting temperature coefficient - Google Patents
Integrated output circuit capable of being used for adjusting temperature coefficient Download PDFInfo
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- CN111427411A CN111427411A CN202010339070.5A CN202010339070A CN111427411A CN 111427411 A CN111427411 A CN 111427411A CN 202010339070 A CN202010339070 A CN 202010339070A CN 111427411 A CN111427411 A CN 111427411A
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- temperature coefficient
- reference voltage
- adjustable resistor
- operational amplifier
- output circuit
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
Abstract
The invention provides an integrated output circuit capable of being used for adjusting a temperature coefficient, which comprises a positive temperature coefficient reference voltage generating module and a negative temperature coefficient reference voltage generating module, wherein the positive temperature coefficient reference voltage generating module outputs a positive temperature coefficient reference voltage to a temperature coefficient selection module; the temperature coefficient selection module is used for outputting reference voltage. The invention can select a proper temperature coefficient according to the requirement of a user until an ideal temperature drift performance is achieved.
Description
Technical Field
The invention belongs to the technical field of integrated circuits, and discloses an integrated output circuit capable of adjusting a temperature coefficient.
Background
The chip is used as the most core element in electronic products, is widely applied to the fields of industry, agriculture, aviation and the like, and plays an important role in the development of modern society. The chip with excellent performance not only needs to have excellent electrical parameters, but also needs to withstand the test of the external harsh environment. For example, the output signal of the system varies with temperature, and in most cases, it is required by the user that the output signal is constant in the operating temperature range, i.e., does not vary with temperature, so the conventional method is to cancel the variation caused by temperature by offsetting the temperature drift factor, etc. In actual application, many excitations used with a chip have a certain temperature drift, so that even though the parameters of the chip do not change with the temperature under the excitation, the temperature drift of the overall parameters of the system can be caused due to the temperature drift of the excitation. Thus, more and more applications are demanding that the chip have a customizable parametric temperature drift to compensate for other factors, such as stimuli, that vary with temperature, so that the overall system parameters have excellent temperature independent behavior.
Disclosure of Invention
The invention aims to provide an integrated output circuit for adjusting a temperature coefficient, which can select a proper temperature coefficient according to the requirements of users until ideal temperature drift performance is achieved.
The technical scheme adopted by the invention is that,
an integrated output circuit capable of being used for adjusting temperature coefficients comprises a positive temperature coefficient reference voltage generating module and a negative temperature coefficient reference voltage generating module, wherein the positive temperature coefficient reference voltage generating module outputs positive temperature coefficient reference voltage to a temperature coefficient selection module; the temperature coefficient selection module is used for outputting reference voltage.
The present invention is also characterized in that,
the positive temperature coefficient reference voltage generating module comprises a bias voltage providing device, the bias voltage providing device provides bias voltage for a base set of a first triode, a collector of the first triode is connected with a drain electrode and a grid electrode of a first PMOS (P-channel metal oxide semiconductor) tube, an emitting set of the first triode is sequentially connected with an adjustable resistor a and an adjustable resistor b, and the voltage value between the adjustable resistor a and the adjustable resistor b is positive temperature coefficient reference voltage.
One end of the bias voltage supply device is also connected with the power supply, and the other end of the bias voltage supply device is grounded;
the source set of the first PMOS tube is connected with a power supply;
the other end of the adjustable resistor b far away from the adjustable resistor a is grounded.
The negative temperature coefficient reference voltage generation module comprises a second PMOS tube, and a source set of the second PMOS tube is sequentially connected with a current source and a grid of a first NMOS tube; the grid electrode of the second PMOS tube is connected with the drain electrode of the first NMOS tube, the source set of the first NMOS tube is sequentially connected with an adjustable resistor c and an adjustable resistor d, and the voltage between the adjustable resistor c and the adjustable resistor d is negative temperature coefficient reference voltage; the grid electrode of the first NMOS tube is also connected with the collector electrode of the second triode, and the base set of the second triode is connected with the source set of the first NMOS tube.
The source set of the second PMOS tube is also connected with a power supply;
one end of the adjustable resistor d, which is far away from the adjustable resistor c, is grounded;
the emission set of the second triode is grounded.
The temperature coefficient selection module comprises a first operational amplifier, positive temperature coefficient reference voltage is input to a first input end of the first operational amplifier, a second input end of the first operational amplifier is connected with an output end of the first operational amplifier, an output end of the first operational amplifier is sequentially connected with an adjustable resistor m, an adjustable resistor n and an output end of a second operational amplifier, negative temperature coefficient reference voltage is input to a first input end of the second operational amplifier, a second input end of the second operational amplifier is connected with an output end of the second operational amplifier, and voltage between the adjustable resistor m and the adjustable resistor n is reference voltage.
The invention has the advantages that
The user can adjust the temperature coefficient through the adjusted resistance values of the adjustable resistor a, the adjustable resistor b, the adjustable resistor c, the adjustable resistor d, the adjustable resistor m and the adjustable resistor n, and even can program and debug on application through programmability until an ideal temperature drift performance is achieved.
Drawings
FIG. 1 is a schematic diagram of an integrated output circuit that may be used to adjust a temperature coefficient in accordance with the present invention;
FIG. 2 is a circuit diagram of a PTC reference voltage generating module for an integrated output circuit with temperature coefficient adjustment according to the present invention;
FIG. 3 is a circuit diagram of a negative temperature coefficient reference voltage generating module in an integrated output circuit for adjusting a temperature coefficient according to the present invention;
FIG. 4 is a circuit diagram of a temperature coefficient selection block in an integrated output circuit according to the present invention;
FIG. 5 is a temperature coefficient selection graph of an integrated output circuit that can be used to adjust the temperature coefficient according to the present invention.
In the figure, 1, a positive temperature coefficient reference voltage generating module, 2, a negative temperature coefficient reference voltage generating module, 3, a temperature coefficient selecting module;
1-1, a first PMOS tube, 1-2, a bias voltage supply device, 1-3, a first triode, 1-4, an adjustable resistor a, 1-5, an adjustable resistor b;
2-1 of a second PMOS tube, 2-2 of a current source, 2-3 of a first NMOS tube, 2-4 of an adjustable resistor c, 2-5 of an adjustable resistor d, 2-6 of a second triode;
3-1, a first operational amplifier, 3-2, a second operational amplifier, 3-3, an adjustable resistor m, 3-4 and an adjustable resistor n.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
The invention relates to an integrated output circuit capable of being used for adjusting a temperature coefficient, which is characterized by comprising a positive temperature coefficient reference voltage generating module 1 and a negative temperature coefficient reference voltage generating module 2, wherein the positive temperature coefficient reference voltage generating module 1 outputs a positive temperature coefficient reference voltage to a temperature coefficient selecting module 3, and the negative temperature coefficient reference voltage generating module 2 outputs a negative temperature coefficient reference voltage to the temperature coefficient selecting module 3; the temperature coefficient selection module 3 is used for outputting a reference voltage.
As shown in fig. 2, the ptc reference voltage generating module 1 includes a bias voltage providing device 1-2, the bias voltage providing device 1-2 provides a bias voltage for a base set of a first transistor 1-3, a collector of the first transistor 1-3 is connected to a drain and a gate of a first PMOS transistor 1-1, an emitter set of the first transistor 1-3 is sequentially connected to an adjustable resistor a1-4 and an adjustable resistor b1-5, and a voltage value between the adjustable resistor a1-4 and the adjustable resistor b1-5 is the ptc reference voltage.
One end of the bias voltage providing device 1-2 is also connected with a power supply, and the other end of the bias voltage providing device 1-2 is grounded;
the source set of the first PMOS tube 1-1 is connected with a power supply;
the other end of the adjustable resistor b1-5, which is far away from the adjustable resistor a1-4, is grounded.
As shown in fig. 3, the negative temperature coefficient reference voltage generating module 2 includes a second PMOS transistor 2-1, a source set of the second PMOS transistor 2-1 is sequentially connected with a current source 2-2 and a gate of a first NMOS transistor 2-3; the grid electrode of the second PMOS tube 2-1 is connected with the drain electrode, the grid electrode of the second PMOS tube 2-1 is also connected with the drain electrode of the first NMOS tube 2-3, the source set of the first NMOS tube 2-3 is also sequentially connected with an adjustable resistor c2-4 and an adjustable resistor d2-5, and the voltage between the adjustable resistor c2-4 and the adjustable resistor d2-5 is negative temperature coefficient reference voltage; the grid electrode of the first NMOS tube 2-3 is also connected with the collector electrode of the second triode 2-6, and the base set of the second triode 2-6 is connected with the source set of the first NMOS tube.
The source set of the second PMOS tube is also connected with a power supply;
one end of the adjustable resistor d2-5, which is far away from the adjustable resistor c2-4, is grounded;
the transmit set of the second transistor 2-6 is grounded.
Referring to fig. 4, the temperature coefficient selection module 3 includes a first operational amplifier 3-1, a positive temperature coefficient reference voltage is input to a first input terminal of the first operational amplifier 3-1, a second input terminal of the first operational amplifier 3-1 is connected to an output terminal of the first operational amplifier 3-1, an output terminal of the first operational amplifier 3-1 is sequentially connected to an adjustable resistor m3-3, an adjustable resistor n3-4 and an output terminal of a second operational amplifier 3-2, a negative temperature coefficient reference voltage is input to a first input terminal of the second operational amplifier 3-2, a second input terminal of the second operational amplifier 3-2 is connected to an output terminal of the second operational amplifier 3-2, and a voltage between the adjustable resistor m3-3 and the adjustable resistor n3-4 is a reference voltage.
The reference voltage to be adjusted is determined through the relation between the reference voltage and the temperature coefficient, and then the reference voltage is changed to a required value through changing the values of an adjustable resistor a1-4, an adjustable resistor b1-5, an adjustable resistor c2-4, an adjustable resistor d2-5, an adjustable resistor m3-3 and an adjustable resistor n 3-4.
The principle of the invention is that,
FIG. 5 is a graph of temperature coefficient selection, positive temperature coefficient reference voltage VpAnd positive temperature coefficient TCpThe relationship of (1) is:
Vp(T) is the output V of the positive temperature coefficient reference voltage at different temperaturesp(300K) The reference voltage with positive temperature coefficient is output at normal temperature, T is temperature variable, and 300K is normal temperature.
Negative temperature coefficient reference voltage VnAnd negative temperature coefficient TCnThe relationship of (1) is:
Vn(T)＝Vn(300K)*[1+TCn(T-300K)](2)
wherein Vn(T) is the output of the negative temperature coefficient reference voltage at different temperatures, Vn(300K) The reference voltage with negative temperature coefficient is output at normal temperature.
Reference voltage V of temperature coefficientoutTemperature coefficient TCoutThe relationship of (1) is:
Vout(T)＝VoutVp(300K)*[1+TCout(T-300K)](3)
wherein Vout(T) is the output of the temperature coefficient reference voltage at different temperatures, Vout(300K) The reference voltage is output at normal temperature.
For the positive temperature coefficient reference voltage generation module 1, a Be junction voltage drop is reduced through band gap output, a positive temperature coefficient reference voltage is provided, and a positive temperature coefficient reference voltage VpWill vary according to the variation of adjustable resistance a1-4 and adjustable resistance b 1-5:
wherein x is a coefficient, VTThe resistance value is electrothermal pressure, a is the resistance value of an adjustable resistor a1-4, and b is the resistance value of an adjustable resistor b 1-5;
for the negative temperature coefficient reference voltage generation module 2, the positive temperature coefficient reference voltage VpWill vary according to the variation of adjustable resistance a1-4 and adjustable resistance b 1-5:
wherein VbeThe base voltage of the second triode 2-6, c and d are the resistance values of an adjustable resistor c2-4 and an adjustable resistor d2-5 respectively;
for the temperature coefficient selection module 3, the reference voltage can be changed by changing the value of the adjustable resistor m3-3 and the value of the adjustable resistor n3-4, namely:
the temperature coefficient T can be obtained by simultaneous formulas (1) to (6)CoutThe calculation formula of (2):
according to the above formula, the temperature coefficient can be adjusted by changing the resistances of a, b, c, d, m and n in the circuit.
Claims (6)
1. The integrated output circuit capable of being used for adjusting the temperature coefficient is characterized by comprising a positive temperature coefficient reference voltage generating module (1) and a negative temperature coefficient reference voltage generating module (2), wherein the positive temperature coefficient reference voltage generating module (1) outputs a positive temperature coefficient reference voltage to a temperature coefficient selection module (3); the negative temperature coefficient reference voltage generation module (2) outputs a negative temperature coefficient reference voltage to the temperature coefficient selection module (3); the temperature coefficient selection module (3) is used for outputting reference voltage.
2. The integrated output circuit for adjusting temperature coefficient according to claim 1, wherein the ptc reference voltage generating module (1) comprises a bias voltage providing device (1-2), the bias voltage providing device (1-2) provides a bias voltage for a base set of a first transistor (1-3), a collector of the first transistor (1-3) is connected to a drain and a gate of the first PMOS transistor (1-1), an emitter of the first transistor (1-3) is connected to an adjustable resistor a (1-4) and an adjustable resistor b (1-5) in sequence, and a voltage value between the adjustable resistor a (1-4) and the adjustable resistor b (1-5) is the ptc reference voltage.
3. An integrated output circuit for adjusting temperature coefficient according to claim 2, wherein one end of the bias voltage providing means (1-2) is further connected to a power supply, and the other end of the bias voltage providing means (1-2) is grounded;
the source set of the first PMOS tube (1-1) is connected with a power supply;
the other end of the adjustable resistor b (1-5) far away from the adjustable resistor a (1-4) is grounded.
4. The integrated output circuit for adjusting temperature coefficient of claim 1, wherein the negative temperature coefficient reference voltage generating module (2) comprises a second PMOS transistor (2-1), a source set of the second PMOS transistor (2-1) is connected with a current source (2-2) and a gate of a first NMOS transistor (2-3) in sequence; the grid electrode of the second PMOS tube (2-1) is connected with the drain electrode, the grid electrode of the second PMOS tube (2-1) is also connected with the drain electrode of the first NMOS tube (2-3), the source set of the first NMOS tube (2-3) is also sequentially connected with an adjustable resistor c (2-4) and an adjustable resistor d (2-5), and the voltage between the adjustable resistor c (2-4) and the adjustable resistor d (2-5) is negative temperature coefficient reference voltage; the grid electrode of the first NMOS tube (2-3) is also connected with the collector electrode of the second triode (2-6), and the base set of the second triode (2-6) is connected with the source set of the first NMOS tube.
5. The integrated output circuit of claim 4, wherein the source set of the second PMOS transistor is further connected to a power supply;
one end of the adjustable resistor d (2-5) far away from the adjustable resistor c (2-4) is grounded;
the emission set of the second triode (2-6) is grounded.
6. An integrated output circuit for adjusting temperature coefficient according to claim 1, wherein the temperature coefficient selection module (3) comprises a first operational amplifier (3-1), the positive temperature coefficient reference voltage is input to a first input terminal of the first operational amplifier (3-1), a second input terminal of the first operational amplifier (3-1) is connected to an output terminal of the first operational amplifier (3-1), an adjustable resistor m (3-3), an adjustable resistor n (3-4) and an output terminal of a second operational amplifier (3-2) are sequentially connected to an output terminal of the first operational amplifier (3-1), the negative temperature coefficient reference voltage is input to a first input terminal of the second operational amplifier (3-2), a second input terminal of the second operational amplifier (3-2) is connected to an output terminal of the second operational amplifier (3-2) The output end is connected, and the voltage between the adjustable resistor m (3-3) and the adjustable resistor n (3-4) is reference voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010339070.5A CN111427411A (en) | 2020-04-26 | 2020-04-26 | Integrated output circuit capable of being used for adjusting temperature coefficient |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010339070.5A CN111427411A (en) | 2020-04-26 | 2020-04-26 | Integrated output circuit capable of being used for adjusting temperature coefficient |
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| CN111427411A true CN111427411A (en) | 2020-07-17 |
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| CN202010339070.5A Pending CN111427411A (en) | 2020-04-26 | 2020-04-26 | Integrated output circuit capable of being used for adjusting temperature coefficient |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112162584A (en) * | 2020-08-31 | 2021-01-01 | 江苏东海半导体科技有限公司 | Current bias circuit with adjustable and compensable current value |
| CN114137294A (en) * | 2020-09-04 | 2022-03-04 | 长鑫存储技术有限公司 | Voltage detection circuit and charge pump circuit |
| US11703527B2 (en) | 2020-09-04 | 2023-07-18 | Changxin Memory Technologies, Inc. | Voltage detection circuit and charge pump circuit |
-
2020
- 2020-04-26 CN CN202010339070.5A patent/CN111427411A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112162584A (en) * | 2020-08-31 | 2021-01-01 | 江苏东海半导体科技有限公司 | Current bias circuit with adjustable and compensable current value |
| CN112162584B (en) * | 2020-08-31 | 2022-05-20 | 江苏东海半导体科技有限公司 | Current bias circuit with adjustable and compensable current value |
| CN114137294A (en) * | 2020-09-04 | 2022-03-04 | 长鑫存储技术有限公司 | Voltage detection circuit and charge pump circuit |
| US11703527B2 (en) | 2020-09-04 | 2023-07-18 | Changxin Memory Technologies, Inc. | Voltage detection circuit and charge pump circuit |
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