CN107104155A - Detector and its method for packing - Google Patents
Detector and its method for packing Download PDFInfo
- Publication number
- CN107104155A CN107104155A CN201710457782.5A CN201710457782A CN107104155A CN 107104155 A CN107104155 A CN 107104155A CN 201710457782 A CN201710457782 A CN 201710457782A CN 107104155 A CN107104155 A CN 107104155A
- Authority
- CN
- China
- Prior art keywords
- detector
- shell
- chip
- cover plate
- optical window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 19
- 238000012856 packing Methods 0.000 title claims abstract description 8
- 230000003287 optical effect Effects 0.000 claims abstract description 20
- 229910000679 solder Inorganic materials 0.000 claims abstract description 12
- 239000011521 glass Substances 0.000 claims abstract description 8
- 239000010453 quartz Substances 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 230000001681 protective effect Effects 0.000 claims abstract description 4
- 229910052738 indium Inorganic materials 0.000 claims description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- XSKUQABTDMBZCN-UHFFFAOYSA-N [Sb].[As].[In] Chemical compound [Sb].[As].[In] XSKUQABTDMBZCN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 229910052700 potassium Inorganic materials 0.000 claims description 3
- 239000011591 potassium Substances 0.000 claims description 3
- -1 potassium arsenic aluminate Chemical class 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000011135 tin Substances 0.000 claims description 3
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims description 2
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000003466 welding Methods 0.000 abstract description 4
- 238000007789 sealing Methods 0.000 abstract description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- DGJPPCSCQOIWCP-UHFFFAOYSA-N cadmium mercury Chemical compound [Cd].[Hg] DGJPPCSCQOIWCP-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
This application discloses a kind of detector, including the shell with opening, the detector chip in the shell and optical window cover plate in the opening is covered, melt back solder connection is passed through between the contact surface of the optical window cover plate and the shell.Disclosed herein as well is the method for packing of detector, including：(1), in optical window cover plate or shell edge of opening deposit solder；(2), using vacuum melt back or fill the method for protective gas melt back and weld together optical window cover plate or shell.The present invention can be saved a step process than the packaged type of existing use parallel seam welding etc., more be saved cost using the method for this quartz or the direct sealing cap of glass.
Description
Technical field
The application belongs to semiconductor packages field, more particularly to a kind of detector and its method for packing.
Background technology
In recent years, with the development of infrared imagery technique, indium gallium infrared focusing plane is imaged as the key of short-wave infrared
Device, its development is taken seriously always.However, traditional short-wave infrared Metal Packaging, is by glass cover-plate elder generation and shell top
Together, then shell top plate and shell housing are welded together using the method for parallel seam welding again for plate weld.This method
Need to use two steps to weld, and need to use parallel seam welding equipment, cost is higher.
The content of the invention
It is an object of the invention to provide a kind of detector and its method for packing, to overcome deficiency of the prior art.
To achieve the above object, the present invention provides following technical scheme：
The embodiment of the present application discloses a kind of detector, including the shell with opening, the detector in the shell
Chip and optical window cover plate in the opening is covered, melt back is passed through between the contact surface of the optical window cover plate and the shell
Solder connection.
It is preferred that, in above-mentioned detector, the shell is made up of a bottom plate and four sides coaming plate, and the bottom plate and coaming plate enclose
Into the cavity for placing the detector chip.
It is preferred that, in above-mentioned detector, the edge of the optical window cover plate protrudes out the opening surrounding of the shell.
It is preferred that, in above-mentioned detector, the optical window cover plate is glass or quartz cover plate.
It is preferred that, in above-mentioned detector, the shell uses metal material.
It is preferred that, in above-mentioned detector, the solder is selected from indium, tin, silver, gold or its alloy.
It is preferred that, in above-mentioned detector, the detector is near-infrared/short-wave infrared detector.
It is preferred that, in above-mentioned detector, the detector chip is selected from indium gallium arsenic chip, indium antimonide chip, tellurium cadmium
Mercury chip, indium arsenic antimony chip, indium arsenic/gallium antimony chip or gallium arsenide/potassium arsenic aluminate chip.
Accordingly, disclosed herein as well is a kind of method for packing of detector, including：
(1), in optical window cover plate or shell edge of opening deposit solder；
(2), using vacuum melt back or fill the method for protective gas melt back and weld together optical window cover plate or shell.
Compared with prior art, the advantage of the invention is that：The present invention uses this quartzy or direct sealing cap of glass
Method, can save a step process than the packaged type of existing use parallel seam welding etc., more save cost.
Brief description of the drawings
, below will be to embodiment or existing in order to illustrate more clearly of the embodiment of the present application or technical scheme of the prior art
There is the accompanying drawing used required in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments described in application, for those of ordinary skill in the art, on the premise of not paying creative work,
Other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 show the schematic flow sheet that detector is encapsulated in the specific embodiment of the invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, detailed retouch is carried out to the technical scheme in the embodiment of the present invention
State, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.Based on the present invention
In embodiment, the every other implementation that those of ordinary skill in the art are obtained on the premise of creative work is not made
Example, belongs to the scope of protection of the invention.
Present embodiment discloses a kind of detector, including the shell 1 with opening, the detector chip in shell 1,
And optical window cover plate 2 in opening is covered, connected between optical window cover plate 2 and the contact surface of shell 1 by melt back solder 3.
Further, shell 1 is made up of a bottom plate and four sides coaming plate, and the bottom plate and coaming plate surround and place detector chip
Cavity.
Further, the edge of optical window cover plate 2 protrudes out the opening surrounding of shell 1.
In a preferred embodiment, optical window cover plate 2 is glass or quartz cover plate.
In a preferred embodiment, shell 1 uses metal material, can be with nickel plating, the face coat such as gold..
In a preferred embodiment, solder 3 is selected from indium, tin, silver, gold or its alloy.
In a preferred embodiment, the detector is near-infrared/short-wave infrared detector.Detector chip is selected from indium gallium arsenic
Chip, indium antimonide chip, mercury cadmium telluride chip, indium arsenic antimony chip, indium arsenic/gallium antimony chip or gallium arsenide/potassium arsenic aluminate chip.More preferably
, detector chip is indium gallium arsenic chip.
With reference to shown in Fig. 1, the method for packing of detector includes：
S1, preparation glass or quartz cover plate
S2, deposit solder, solder can be indiums, and tin is silver-colored, metal or their alloy such as gold.
S3, preparation detector device, shell；It can be the devices such as cell-in-series, face battle array series that shell, which lays detector, make
With vacuum melt back or the method for protective gas melt back is filled by glass or quartz cover plate together with shell case weld, shell
Housing can be cut down, the common metal shell such as stainless steel, can be with nickel plating, the face coat such as gold.
Finally it should be noted that：Various embodiments above is merely illustrative of the technical solution of the present invention, rather than its limitations；To the greatest extent
The present invention is described in detail with reference to foregoing embodiments for pipe, it will be understood by those within the art that：Its according to
The technical scheme described in foregoing embodiments can so be modified, or which part or all technical characteristic are entered
Row equivalent substitution；And these modifications or replacement, the essence of appropriate technical solution is departed from various embodiments of the present invention technology
The scope of scheme.
Claims (9)
1. a kind of detector, it is characterised in that including the shell with opening, the detector chip in the shell, with
And cover and connected between optical window cover plate in the opening, the contact surface of the optical window cover plate and the shell by melt back solder
Connect.
2. detector according to claim 1, it is characterised in that：The shell is made up of a bottom plate and four sides coaming plate, should
Bottom plate and coaming plate surround the cavity for placing the detector chip.
3. detector according to claim 2, it is characterised in that：The edge of the optical window cover plate protrudes out the shell
Be open surrounding.
4. detector according to claim 1, it is characterised in that：The optical window cover plate is glass or quartz cover plate.
5. detector according to claim 1, it is characterised in that：The shell uses metal material.
6. detector according to claim 1, it is characterised in that：The solder is selected from indium, tin, silver, gold or its alloy.
7. detector according to claim 1, it is characterised in that：The detector is near-infrared/short-wave infrared detector.
8. detector according to claim 1, it is characterised in that：The detector chip is selected from indium gallium arsenic chip, antimony
Indium chip, mercury cadmium telluride chip, indium arsenic antimony chip, indium arsenic/gallium antimony chip or gallium arsenide/potassium arsenic aluminate chip.
9. the method for packing of any described detector of claim 1 to 8, it is characterised in that including：
(1), in optical window cover plate or shell edge of opening deposit solder；
(2), using vacuum melt back or fill the method for protective gas melt back and weld together optical window cover plate or shell.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710457782.5A CN107104155A (en) | 2017-06-16 | 2017-06-16 | Detector and its method for packing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710457782.5A CN107104155A (en) | 2017-06-16 | 2017-06-16 | Detector and its method for packing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107104155A true CN107104155A (en) | 2017-08-29 |
Family
ID=59660458
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710457782.5A Pending CN107104155A (en) | 2017-06-16 | 2017-06-16 | Detector and its method for packing |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107104155A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115575802A (en) * | 2022-12-07 | 2023-01-06 | 武汉乾希科技有限公司 | Test system of optical sensor chip |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050263878A1 (en) * | 2004-05-28 | 2005-12-01 | Stellar Microdevices, Inc. | Cold weld hermetic MEMS package and method of manufacture |
| US20060268400A1 (en) * | 2005-05-26 | 2006-11-30 | Jenoptik Laser, Optik, Systeme Gmbh | Method for the production of window elements which can be soldered into a housing in a hermetically tight manner and of a window element sealing a housing |
| CN204614790U (en) * | 2015-05-08 | 2015-09-02 | 重庆鹰谷光电有限公司 | A kind of microminiaturized ceramic cartridge photodetector encapsulating structure |
| CN105280783A (en) * | 2015-11-18 | 2016-01-27 | 佛山市南海区联合广东新光源产业创新中心 | An ultraviolet led device |
-
2017
- 2017-06-16 CN CN201710457782.5A patent/CN107104155A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050263878A1 (en) * | 2004-05-28 | 2005-12-01 | Stellar Microdevices, Inc. | Cold weld hermetic MEMS package and method of manufacture |
| US20060268400A1 (en) * | 2005-05-26 | 2006-11-30 | Jenoptik Laser, Optik, Systeme Gmbh | Method for the production of window elements which can be soldered into a housing in a hermetically tight manner and of a window element sealing a housing |
| CN204614790U (en) * | 2015-05-08 | 2015-09-02 | 重庆鹰谷光电有限公司 | A kind of microminiaturized ceramic cartridge photodetector encapsulating structure |
| CN105280783A (en) * | 2015-11-18 | 2016-01-27 | 佛山市南海区联合广东新光源产业创新中心 | An ultraviolet led device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115575802A (en) * | 2022-12-07 | 2023-01-06 | 武汉乾希科技有限公司 | Test system of optical sensor chip |
| CN115575802B (en) * | 2022-12-07 | 2023-03-10 | 武汉乾希科技有限公司 | Test system of optical sensor chip |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170829 |