CN107078418A - Anisotropic conductive film, its manufacture method and connection structural bodies - Google Patents
Anisotropic conductive film, its manufacture method and connection structural bodies Download PDFInfo
- Publication number
- CN107078418A CN107078418A CN201580055638.8A CN201580055638A CN107078418A CN 107078418 A CN107078418 A CN 107078418A CN 201580055638 A CN201580055638 A CN 201580055638A CN 107078418 A CN107078418 A CN 107078418A
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- Prior art keywords
- conducting particles
- anisotropic conductive
- conductive film
- insulating properties
- average grain
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R11/00—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
- H01R11/01—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
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- H—ELECTRICITY
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- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/16—Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
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- C09J7/10—Adhesives in the form of films or foils without carriers
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- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
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- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
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Abstract
The present invention provides a kind of anisotropic conductive film, it is the anisotropic conductive film of the structure for the lattice point that conducting particles is configured in plane lattice pattern in insulating properties adhesive substratum, ratio of the lattice point relative to whole lattice points of conducting particles is not configured in the plane lattice pattern assumed in its reference area for less than 20%, multiple conducting particles cohesion in plane lattice pattern and the lattice point that configures are less than 15% relative to the ratio of whole lattice points, and missing and cohesion are added up to less than 25%.
Description
Technical field
The present invention relates to anisotropic conductive film.
Background technology
The anisotropic conductive film of conducting particles is dispersed with known insulative resin adhesive by IC chip etc.
Electronic unit is widely used when being installed on wiring substrate etc., but in such anisotropic conductive film, conducting particles each other with
Link or the state of cohesion is present.Therefore, anisotropic conductive film is applied to narrow with the light weight miniaturization of electronic equipment
In the case of connection between the terminal of the IC chip of spacing and the terminal of wiring substrate, sometimes because of anisotropic conductive film
In occur short circuit between adjacent terminal with the conducting particles that the state that links or condense is present.
In the past, as the anisotropic conductive film of the such thin space of reply, conducting particles rule is made in motion film
The anisotropic conductive film of arrangement.For example, motion as follows obtains anisotropic conductive film:Adhesion is formed on stretchable film
Layer, after intensive filling conducting particles, 2 axle stretch processings are carried out until between conducting particles in the adhesion layer surface with individual layer by the film
Distance reaches desired distance, makes conducting particles regularly arranged, afterwards, and anisotropic conductive film is used as to conducting particles pressing
The insulating properties adhesive substratum of inscape, makes conducting particles be needed on insulating properties adhesive substratum (patent document 1).In addition, also carrying
The anisotropic conductive film that obtains as follows of case:The recess that conducting particles is interspersed among into surface has the roller mould of recess is formed
On face, sweeping recess formation face makes conducting particles be held in recess, and thereon, pressing is formed with the adhesive film of transfer adhesion coating,
Make conducting particles primary transfer on adhesion coating, then, the conducting particles for being attached to adhesion coating is pressed and led as anisotropy
The insulating properties adhesive substratum of the inscape of electrolemma, makes conducting particles be needed on insulating properties adhesive substratum (patent document 2).On
These anisotropic conductive films, typically the surface stacking insulating properties in conducting particles side are bonded coating to cover conductive particle
Son.
Prior art literature
Patent document
Patent document 1:No. WO2005/054388
Patent document 2:Japanese Unexamined Patent Publication 2010-33793 publications
The content of the invention
Invent problem to be solved
However, conducting particles condenses because of electrostatic etc., it is prone to which offspring, therefore, it is difficult to make conducting particles always
It is used as primary particle individualism.Therefore, following problem occurs in patent document 1, the technology of patent document 2.That is, patent document
In the case of 1, there are the following problems:It is difficult to conducting particles zero defect being filled in the whole of stretchable film so that individual layer is intensive
Face, conducting particles is filled in stretchable film with state of aggregation, the reason for as short circuit;Or there is the region not being filled
(so-called " missing "), the reason for as poor flow.In addition, in the case of patent document 2, there are the following problems:If transfer
The recess of mould is covered by the big conducting particles of particle diameter, then removal can be swept after, is occurred without holding conducting particles
Recess, in anisotropic conductive film produce conducting particles " missing " and turn into poor flow the reason for;If on the contrary, recessed
Multiple small conducting particles are squeezed into portion, then when being needed on insulating properties adhesive substratum, it may occur that the cohesion of conducting particles;In addition,
Conducting particles positioned at the bottom side of recess is not contacted with insulating properties adhesive substratum, therefore on the surface of insulating properties adhesive substratum point
Dissipate, destroy it is regularly arranged, as short circuit, poor flow the reason for.
So, the actual conditions of patent document 1,2 are, for how should to control in anisotropic conductive film should be to advise
Then " missing " and " cohesion " of the conducting particles of pattern arrangement, is not taken into full account.
Present invention aim to address the problem of conventional art above, from the conducting particles that should be arranged with regular pattern
" missing " and " cohesion " from the viewpoint of there is provided short circuit, the anisotropic conductive film that is significantly suppressed of generation of poor flow.
Method for solving problem
The inventors discovered that, by when conducting particles to be configured to the lattice point of plane lattice, controlling anisotropic conductive
In the plane lattice pattern assumed in the reference area of film " ratio of the lattice point of conducting particles is not configured relative to whole lattice points
Example " and the ratio of the lattice point of configuration " cohesion of multiple conducting particles and " and " the cohesion side of the conducting particles of cohesion optionally
To ", above-mentioned purpose can be reached.In addition, the inventors discovered that, institute is false in the reference area by controlling anisotropic conductive film
Relative to " ratio for not configuring the lattice point of conducting particles " of whole lattice points and " multiple conducting particles in fixed plane lattice pattern
The ratio for the lattice point for condensing and configuring ", and make at least a portion conducting particles of cohesion each other in anisotropic conductive film
Deviate on thickness direction and configure, can also reach above-mentioned purpose.Then, based on the opinion obtained, the present invention is completed.This
Outside, find that conducting particles is not configured to the recess of transfer article, but be attached to conducting particles to be formed with column on surface convex
The top of the convex portion of the transfer article in portion is simultaneously transferred, so as to manufacture such anisotropic conductive film, completes this
The manufacture method of invention.
That is, the present invention provides a kind of anisotropic conductive film, and it is that conducting particles is configured in insulating properties adhesive substratum
The anisotropic conductive film of the structure of the lattice point of plane lattice pattern,
In the plane lattice pattern assumed in the reference area of anisotropic conductive film, the lattice point of conducting particles is not configured
Relative to whole lattice points ratio (ratio of the grid of conducting particles " missing ") be less than 20%,
In the plane lattice pattern, the lattice point that multiple conducting particles condense and configured (is led relative to the ratio of whole lattice points
The ratio of the grid of charged particle " cohesion ") it is less than 15%, missing and cohesion add up to less than 25%.
On the anisotropic conductive film of the present invention, more specifically there is provided each to different of following first~fourth way
Property conducting film.
That is, as first method, the present invention provides a kind of anisotropic conductive film, and it is to be laminated with insulating properties adhesive substratum
Coating is bonded with insulating properties and the structure of the lattice point of plane lattice pattern is configured in their near interface conducting particles
Anisotropic conductive film,
In the plane lattice pattern assumed in the reference area of anisotropic conductive film, the lattice point of conducting particles is not configured
Relative to whole lattice points ratio be less than 20%,
In the plane lattice pattern, the lattice point that multiple conducting particles condense and configured is relative to the ratio of whole lattice points
Less than 5%.In the first method, missing and the total of cohesion are preferably less than 25%.
In addition, as second method, the present invention provides a kind of anisotropic conductive film, it is to be laminated with insulating properties bonding base
Layer and insulating properties are bonded coating and the knot of the lattice point of plane lattice pattern are configured in their near interface conducting particles
The anisotropic conductive film of structure,
In the plane lattice pattern assumed in the reference area of anisotropic conductive film, the lattice point of conducting particles is not configured
Relative to whole lattice points ratio be less than 5%,
In the plane lattice pattern, the lattice point that multiple conducting particles condense and configured is big relative to the ratio of whole lattice points
In 10% and less than 15%.In the second method, missing and the total of cohesion are preferably less than 20%.
In addition, as Third Way, the present invention provides a kind of anisotropic conductive film, it is to be laminated with insulating properties bonding base
Layer and insulating properties are bonded coating and the knot of the lattice point of plane lattice pattern are configured in their near interface conducting particles
The anisotropic conductive film of structure,
In the plane lattice pattern assumed in the reference area of anisotropic conductive film, the lattice point of conducting particles is not configured
Ratio relative to whole lattice points is less than 15%,
In the plane lattice pattern, the lattice point that multiple conducting particles condense and configured is relative to the ratio of whole lattice points
Less than 10%,
The conducting particles for condensing and configuring condenses on the face direction of anisotropic conductive film each other.In the Third Way,
Missing and total preferably less than the 25% of cohesion.
That is, as fourth way, the present invention provides a kind of anisotropic conductive film, and it is to be laminated with insulating properties adhesive substratum
Coating is bonded with insulating properties and the structure of the lattice point of plane lattice pattern is configured in their near interface conducting particles
Anisotropic conductive film,
In the plane lattice pattern assumed in the reference area of anisotropic conductive film, the lattice point of conducting particles is not configured
Relative to whole lattice points ratio be less than 10%,
In the plane lattice pattern, the lattice point that multiple conducting particles condense and configured is relative to the ratio of whole lattice points
Less than 15%,
At least a portion conducting particles for condensing and configuring tilts inclined on the thickness direction of anisotropic conductive film each other
From and configure.In the fourth way, missing and the total of cohesion are preferably less than 25%.
In addition, the present invention provides a kind of manufacture method, it is to be laminated with insulating properties adhesive substratum and insulating properties bonding covering
Layer and the above-mentioned anisotropy of structure of lattice point of plane lattice pattern is configured in their near interface conducting particles leads
Electrolemma, specially first, second, third or fourth way anisotropic conductive film manufacture method, with following process (I)
~(V):
<Process (I)>
Prepare the process of transfer article, the transfer article is formed with convex equivalent to the column of the lattice point of plane lattice pattern on surface
Portion;
<Process (II)>
The process that micro- adhesion coating is made at least top surface of the convex portion of the transfer article;
<Process (III)>
The process for making conducting particles be attached to micro- adhesion coating of the convex portion of the transfer article;
<Process (IV)>
Surface in the side for being attached to conducting particles of the transfer article is overlapping and presses insulating properties adhesive substratum, so that
Conducting particles turns the process for investing insulating properties adhesive substratum;And
<Process (V)>
For turning the insulating properties adhesive substratum with conducting particles, attached face side stacking insulating properties bonding is turned from conducting particles
The process of coating.
Further, the present invention provides a kind of connection structural bodies, and it is the terminal and the second electronic unit of the first electronic unit
Terminal by above-mentioned anisotropic conductive film, be specially that first, second, third or the anisotropic conductive film of fourth way are entered
Row anisotropic conductive is formed by connecting.
Invention effect
In the anisotropic conductive film of the present invention, in the plane lattice pattern assumed in reference area, relative to whole
Lattice point, the ratio (ratio for the grid that conducting particles has been lacked) of " lattice point for not configuring conducting particles " is set to be less than
20%, the ratio (ratio for the grid that conducting particles has condensed) of " cohesion of multiple conducting particles and configure lattice point " for 15% with
Under, and missing and the total of cohesion are set to less than 25%.Therefore, the anisotropic conductive film of the present invention is applied to each
In the case that anisotropy is conductively connected, the good conducting reliability after good conduction at initial stage and aging can be realized,
The generation of short circuit can be suppressed.In addition, not only for COG, for projection area, distance than larger electronic unit, such as FOG
Deng economy is also excellent.
In addition, in the manufacture method of the anisotropic conductive film of the present invention, being formed with using on surface equivalent to plane lattice
The transfer article of the cylindrical projection of the lattice point of sub-pattern, makes conducting particles be attached to the micro- adhesion coating to be formed in the top surface of the convex portion
Afterwards, the conducting particles is needed on insulating properties adhesive substratum.It is false therefore, it is possible to institute in the reference area by anisotropic conductive film
" lattice point for not configuring conducting particles " is set to be less than 20% relative to the ratio of whole lattice points in fixed plane lattice pattern, and will
" lattice point that multiple conducting particles condense and configured " is set to less than 15% relative to the ratio of whole lattice points in plane lattice pattern.
Thus, manufacture method of the invention can economically advantageously manufacture anisotropic conductive film, if using the anisotropy
Conducting film, then can be while short circuit, the generation of poor flow be significantly suppressed by the IC chip and wiring substrate of thin space
Carry out anisotropic conductive connection.
In the anisotropic conductive film of the 1st aspect of the present invention, in the plane lattice pattern assumed in reference area
" lattice point for not configuring conducting particles " is set to be less than 20%, and " multiple conducting particles relative to the ratio of whole lattice points
The ratio of the lattice point for condensing and configuring " is less than 5%.Therefore, the anisotropic conductive film of the present invention is applied to anisotropy
In the case of being conductively connected, the good conducting reliability after good conduction at initial stage and aging can be realized, can also be pressed down
Make the generation of short circuit.In addition, not only for COG, for projection area, distance than larger electronic unit, such as FOG, warp
Ji property is also excellent.
In addition, in the manufacture method of the anisotropic conductive film of the 1st aspect of the present invention, phase is formed with using on surface
When the transfer article of the cylindrical projection of the lattice point in plane lattice pattern, conducting particles is set to be attached to the top surface to be formed in the convex portion
After micro- adhesion coating, the conducting particles is needed on insulating properties adhesive substratum.Therefore, it is possible to by the reference region of anisotropic conductive film
" lattice point for not configuring conducting particles " is set to be less than relative to the ratio of whole lattice points in the plane lattice pattern assumed in domain
20%, and " lattice point that multiple conducting particles condense and configured " in plane lattice pattern is set to relative to the ratio of whole lattice points
Less than 5%.Thus, manufacture method of the invention can manufacture anisotropic conductive film economical advantages, if each using this
Anisotropy conducting film, then can significantly suppress short circuit, the generation of poor flow while by the IC chip of thin space with matching somebody with somebody
Line substrate carries out anisotropic conductive connection.
In the anisotropic conductive film of the 2nd aspect of the present invention, in the plane lattice pattern assumed in reference area
" lattice point for not configuring conducting particles " is set to be less than 5% relative to the ratio of whole lattice points, and " multiple conducting particles coagulate
The ratio of the lattice point for gathering and configuring " is set to be greater than 10% and less than 15%.Therefore, by the anisotropic conductive film of the present invention
In the case of applied to anisotropic conductive connection, it can show that the good conducting after good conduction at initial stage and aging can
By property, it can also suppress the generation of short circuit.In addition, not only for COG, for projection area, distance than larger electronic unit,
Such as FOG, economy is also excellent.
In addition, in the manufacture method of the anisotropic conductive film of the 2nd aspect of the present invention, phase is formed with using on surface
When the transfer article of the cylindrical projection of the lattice point in plane lattice pattern, conducting particles is set to be attached to the top surface to be formed in the convex portion
After micro- adhesion coating, the conducting particles is needed on insulating properties adhesive substratum.Therefore, it is possible to by the arbitrary of anisotropic conductive film
" lattice point for not configuring conducting particles " is set relative to the ratio of whole lattice points in the plane lattice pattern assumed in reference area
For less than 5%, and by " lattice point that multiple conducting particles condense and configured " in plane lattice pattern relative to the ratio of whole lattice points
Example is set to be more than 10% and less than 15%.Thus, in manufacture method of the invention, anisotropy can be manufactured economical advantages
Conducting film, if using the anisotropic conductive film, can significantly suppress short circuit, the generation of poor flow while will be narrow
The IC chip of spacing carries out anisotropic conductive with wiring substrate and is connected.
In addition, in the anisotropic conductive film of the 3rd aspect of the present invention, the square lattice graph assumed in reference area
" lattice point for not configuring conducting particles " is set to less than 15%, and " multiple conductions relative to the ratio of whole lattice points in case
The ratio of particle coacervation and the lattice point configured " is set to less than 10%, and the conducting particles for condensing and configuring is each other each
Condensed on the face direction of anisotropy conducting film.Therefore, the anisotropic conductive film of the present invention is connected applied to anisotropic conductive
In the case of connecing, the good conducting reliability after good conduction at initial stage and aging can be realized, can also suppress short circuit
Generation.In addition, not only for COG, for projection area, distance than larger electronic unit, such as FOG, economy
It is excellent.
In addition, in the manufacture method of the anisotropic conductive film of the 3rd aspect of the present invention, phase is formed with using on surface
When the transfer article of the cylindrical projection of the lattice point in plane lattice pattern, conducting particles is set to be attached to the top surface to be formed in the convex portion
After micro- adhesion coating, the conducting particles is needed on insulating properties adhesive substratum.Therefore, it is possible to by the reference region of anisotropic conductive film
" lattice point for not configuring conducting particles " is set to 15% relative to the ratio of whole lattice points in the plane lattice pattern assumed in domain
Hereinafter, " lattice point that multiple conducting particles condense and configured " in plane lattice pattern is set to relative to the ratio of whole lattice points
Less than 10%, and the conducting particles for making cohesion and the configuring cohesion on the face direction of anisotropic conductive film each other.Thus, this hair
Bright manufacture method can manufacture anisotropic conductive film economical advantages, if using the anisotropic conductive film, can
It is enough that the IC chip of thin space and wiring substrate are subjected to anisotropy while short circuit, the generation of poor flow is significantly suppressed
It is conductively connected.
In the anisotropic conductive film of the 4th aspect of the present invention, in the plane lattice pattern assumed in reference area
" lattice point for not configuring conducting particles " is set to be less than 10% relative to the ratio of whole lattice points, " multiple conducting particles cohesions
And the lattice point configured " ratio be set to less than 15%, and at least a portion conducting particles for condensing and configuring exists each other
Tilted on the thickness direction of anisotropic conductive film and deviate and configure.Therefore, the anisotropic conductive film of the present invention is applied to
In the case that anisotropic conductive is connected, the good conducting reliability after good conduction at initial stage and aging can be realized,
Also the generation of short circuit can be suppressed.In addition, not only for COG, for projection area, distance than larger electronic unit, for example
FOG etc., economy is also excellent.
In addition, in the manufacture method of the anisotropic conductive film of the 4th aspect of the present invention, phase is formed with using on surface
When the transfer article of the cylindrical projection of the lattice point in plane lattice pattern, conducting particles is set to be attached to the top surface to be formed in the convex portion
After micro- adhesion coating, the conducting particles is needed on insulating properties adhesive substratum.Therefore, it is possible to by the reference region of anisotropic conductive film
" lattice point for not configuring conducting particles " is set to be less than relative to the ratio of whole lattice points in the plane lattice pattern assumed in domain
10%, " lattice point that multiple conducting particles condense and configured " in plane lattice pattern is set to relative to the ratio of whole lattice points
Less than 15%, and at least a portion conducting particles that cohesion is configured is each other on the thickness direction of anisotropic conductive film
Tilt and deviate and configure.Thus, in manufacture method of the invention, anisotropic conductive film can be manufactured, such as economical advantages
Fruit uses the anisotropic conductive film, then can be while short circuit, the generation of poor flow is significantly suppressed, by thin space
IC chip carries out anisotropic conductive with wiring substrate and is connected.
Brief description of the drawings
Fig. 1 is the sectional view of the anisotropic conductive film of the 1st aspect of the present invention.
Fig. 2 is the plane perspective view of the anisotropic conductive film of the 1st aspect of the present invention.
Fig. 3 A are the specification figures of the manufacture method of the anisotropic conductive film of the 1st aspect of the present invention.
Fig. 3 B are the specification figures of the manufacture method of the anisotropic conductive film of the 1st aspect of the present invention.
Fig. 3 C are the specification figures of the manufacture method of the anisotropic conductive film of the 1st aspect of the present invention.
Fig. 3 D are the specification figures of the manufacture method of the anisotropic conductive film of the 1st aspect of the present invention.
Fig. 3 E are the specification figures of the manufacture method of the anisotropic conductive film of the 1st aspect of the present invention.
Fig. 3 F are the specification figures of the manufacture method of the anisotropic conductive film of the 1st aspect of the present invention, are also simultaneously
The summary sectional view of the anisotropic conductive film of the 1st aspect of the present invention.
Fig. 4 is the sectional view of the anisotropic conductive film of the 2nd aspect of the present invention.
Fig. 5 A are the plane perspective views of the anisotropic conductive film of the 2nd aspect of the present invention.
Fig. 5 B are the magnified partial views of the plane perspective view of the anisotropic conductive film of the 2nd aspect of the present invention.
Fig. 6 A are the specification figures of the manufacture method of the anisotropic conductive film of the 2nd aspect of the present invention.
Fig. 6 B are the specification figures of the manufacture method of the anisotropic conductive film of the 2nd aspect of the present invention.
Fig. 6 C are the specification figures of the manufacture method of the anisotropic conductive film of the 2nd aspect of the present invention.
Fig. 6 D are the specification figures of the manufacture method of the anisotropic conductive film of the 2nd aspect of the present invention.
Fig. 6 E are the specification figures of the manufacture method of the anisotropic conductive film of the 2nd aspect of the present invention.
Fig. 6 F are the specification figures of the manufacture method of the anisotropic conductive film of the 2nd aspect of the present invention, are also simultaneously
The summary sectional view of the anisotropic conductive film of the 2nd aspect of the present invention.
Fig. 7 is the sectional view of the anisotropic conductive film of the 3rd aspect of the present invention.
Fig. 8 is the plane perspective view of the anisotropic conductive film of the 3rd aspect of the present invention.
Fig. 9 A are the specification figures of the manufacture method of the anisotropic conductive film of the 3rd aspect of the present invention.
Fig. 9 B are the specification figures of the manufacture method of the anisotropic conductive film of the 3rd aspect of the present invention.
Fig. 9 C are the specification figures of the manufacture method of the anisotropic conductive film of the 3rd aspect of the present invention.
Fig. 9 D are the specification figures of the manufacture method of the anisotropic conductive film of the 3rd aspect of the present invention.
Fig. 9 E are the specification figures of the manufacture method of the anisotropic conductive film of the 3rd aspect of the present invention.
Fig. 9 F are the specification figures of the manufacture method of the anisotropic conductive film of the 3rd aspect of the present invention, are also simultaneously
The summary sectional view of the anisotropic conductive film of the 3rd aspect of the present invention.
Figure 10 is the sectional view of the anisotropic conductive film of the 4th aspect of the present invention.
Figure 11 is the plane perspective view of the anisotropic conductive film of the 4th aspect of the present invention.
Figure 12 A are the specification figures of the manufacture method of the anisotropic conductive film of the 4th aspect of the present invention.
Figure 12 B are the specification figures of the manufacture method of the anisotropic conductive film of the 4th aspect of the present invention.
Figure 12 C are the specification figures of the manufacture method of the anisotropic conductive film of the 4th aspect of the present invention.
Figure 12 D are the specification figures of the manufacture method of the anisotropic conductive film of the 4th aspect of the present invention.
Figure 12 E are the specification figures of the manufacture method of the anisotropic conductive film of the 4th aspect of the present invention.
Figure 12 F are the specification figures of the manufacture method of the anisotropic conductive film of the 4th aspect of the present invention, while
It is the summary sectional view of the anisotropic conductive film of the 4th aspect of the present invention.
Embodiment
The anisotropic conductive film of the present invention has following structure:It is laminated with insulating properties adhesive substratum and insulating properties bonding is covered
Cap rock and it is configured in the lattice point of plane lattice pattern in their near interface conducting particles.In the anisotropic conductive film,
The lattice point for not configuring conducting particles in the plane lattice pattern assumed in reference area is (conductive relative to the ratio of whole lattice points
The ratio of the grid of particle " missing ") it is multiple conducting particles cohesions in plane lattice pattern and the lattice that configure less than 20%
Point is less than 15% relative to the ratio (ratio of the grid of conducting particles " cohesion ") of whole lattice points, and is lacked and cohesion
Add up to less than 25%.The reference area is by meeting relationship below in the plane central portion of anisotropic conductive film
(A), (2) and (3) while X and while Y constitute general square shape region.Here, D is the average grain diameter of conducting particles, and side Y is phase
For anisotropic conductive film length direction be less than ± 45 ° scope straight line, while X be with while the vertical straight lines of Y.
100D≤X+Y≤400D (A)
X≥5D (2)
Y≥5D (3)
Hereinafter, the anisotropic conductive film of the present invention is specifically described by each mode.Specifically, first, one
Side describes the anisotropic conductive film and its manufacture method of the 1st aspect of the present invention in detail referring to the drawings one side.
<The anisotropic conductive film of first method>
As shown in Fig. 1 (sectional view) and Fig. 2 (plane perspective view), anisotropic conductive film 10 of the invention has following knot
Structure:Insulating properties adhesive substratum 11 and insulating properties bonding coating 12 are laminated with, and in their quilt of near interface conducting particles 13
It is configured at the lattice point of plane lattice pattern (Fig. 2 dotted line).In Fig. 1 and Fig. 2, plane lattice pattern is assumed along each to different
Property conducting film 10 length direction and orthogonal to that direction (width), but can also be assumed relative to length direction and
Width is integral inclined.Here, arrow A represents that the lattice point in plane lattice is not configured with the position of conducting particles, so-called led
The position of charged particle " missing ".In addition, arrow B represents the position that conducting particles is in contact with each other and condensed, arrow C represents conductive
The position that particle non-contactly condenses each other.Here, " non-contactly condense " means, conducting particles is each other with no more than leading
25% scope of the average grain diameter of charged particle is approached.
(" missing " of conducting particles)
In the anisotropic conductive film of the present invention, the plane lattice that will be assumed in the reference area of anisotropic conductive film
Ratio (the grid that conducting particles has been lacked of " lattice point for not configuring conducting particles " (Fig. 2 A) relative to whole lattice points in pattern
Ratio) be set smaller than 20%, be preferably set to less than 18%, be more preferably set as 10~18%.Thus, by the present invention's
In the case that anisotropic conductive film is applied to anisotropic conductive connection, it can realize after good conduction at initial stage and aging
Good conducting reliability, can also suppress short circuit generation.
(plane lattice pattern)
As plane lattice pattern, diamond check, hexagonal grid, square lattice, rectangular grid, parallel four can be enumerated
Side shape grid.Wherein, be preferably can closest packing hexagonal grid.
Here, as the reference area of anisotropic conductive film, though the whole face of anisotropic conductive film also may be selected, generally
Preferably select in the plane central portion of anisotropic conductive film by meet relationship below (A), be preferably relational expression (1) and close
Be formula (2) and (3) while X and while the regions of general square shape that constitute of Y as reference area.
100D≤X+Y≤400D (A)
X+Y=100D (1)
X≥5D (2)
Y≥5D (3)
In addition, in the case where being applied to the FOG connections of larger connection area, depositing for the conducting particles in film can be made
It is few in amount, in that case of, it is as follows, preferably make that X and Y value is big, be preferably set to more than 20D respectively, and preferably " X+Y "
Numerical value be also the numerical value near 100D to 400D, be finally preferably set to 400D.
X+Y=400D
X≥20D
Y≥20D
In formula (A) and (1)~(3), above-mentioned formula, D is the average grain diameter of conducting particles.The average grain diameter of conducting particles can profit
Determined with image-type or laser type particles distribution instrument.Also it can be measured by viewed in plan.In addition, side Y be relative to it is each to
The length direction (reference picture 2) of anisotropic conductive film is less than the straight line of ± 45 ° of scope, while X be with while the vertical straight lines of Y.
By such stipulated standard region, so as to make the shape of projection of the reference area to pressing conducting particles similar
Or it is approximate, the allowed band that conducting particles can as a result deviateed from plane lattice pattern becomes big, final economy and stably enters
Row anisotropic conductive is connected.In other words, by the way that the minimum edge of the reference area is set into more than 5 times of conductive particle diameter, so that
In this range, also can be by any projection even if the position that there is conducting particles in the range of assuming is deviateed, lacks, approached
Trap, and exceedingly condensed in the gap not between projection, therefore, it is possible to effectively carry out anisotropic conductive connection.
In addition, the reason for minimum side is set into more than 5 times of conductive particle diameter is, it is however generally that, in order to by it is each to
At least 1 side for the projection that the opposite sex is conductively connected effectively is trapped, it is necessary to be larger than the average grain diameter of conducting particles, and
For the gap between projection, from considering the reason for preventing short circuit, in addition it is also necessary to be preferably set to the average grain of conducting particles
More than 2 times of the size in footpath.In other words, because, when paying close attention to a circular conducting particles as benchmark, if
Length (i.e. 5D) obtained from adding 4 times of length (4D) of the particle diameter with the average grain diameter D of the conducting particles is the same of diameter
Do not occur in heart circle bad outside assuming, then it is assumed that above-mentioned important document can be met.Additionally because of between projection when forming micro- spacing
Minimum range be, for example, less than 4 times of conductive particle diameter.
(cohesion of conducting particles)
In addition, in the anisotropic conductive film of the present invention, multiple conducting particles condense and configured in plane lattice pattern
Lattice point (Fig. 2 B and C) is preferably less than 15% relative to the ratio of whole lattice points, and more preferably less than 5%.Due to 0% resonable
By upper preferred, therefore also it is smaller than 0.1%.If the ratio for the lattice point for condensing and configuring is less than 5%, by the present invention
Anisotropic conductive film be applied to anisotropic conductive connection in the case of, better conduction at initial stage can be realized and old
Conducting reliability after change, also can further suppress the generation of short circuit.Here, with regard to the cohesion of the conducting particles on a lattice point
It is preferably few from the viewpoint of short circuit is suppressed for degree, preferably more than 2.In addition, as Fig. 2 C, condensing
Conducting particles do not contact with each other each other in the case of, its be preferably spaced the 25% of the average grain diameter of conducting particles with
It is interior, within more preferably 15%.
In addition, in the first method, missing and the total of cohesion are preferably less than 25%.
(configuration of conducting particles)
Conducting particles is preferably continuously configured on the direction vertical with the length direction of film with more than 11, more preferably with
More than 13 continuously configure.Because, can if occurring the omission of conducting particles relative to the length direction of projection
Obstacle can be caused to anisotropic conductive connection.In this case, it is preferred that having length direction of 3 row along film and continuous conductive
Particle all meets conditions above, more preferably has 5 row all to meet conditions above.Thereby, it is possible to make the conduction trapped by projection
Population is the anisotropic conductive connection that can be stablized more than certain.
In the case that conducting particles condenses, around 2 conducting particles condensed, 2 conducting particles for having linked
Group be preferably less than 3 groups, more preferably less than 2 groups, be even more preferably less than 1 group.Because, if 2 cohesions
Conducting particles it is intensive exist, then can turn into the factor for occurring short circuit.
In addition, the omission on conducting particles, preferably on the length direction of film more than 4 it is continuous vacant and with film
The vertical direction of length direction on more than 4 it is continuous vacant non-intersect, more preferably any more than 4 continuous omissions every
More than one non-conterminous as conducting particles of lattice point, even more preferably any more than 4 continuous omissions across
Two or more turns into the conducting particles of lattice point and non-conterminous.On such vacant intersecting, for the omission in a direction, together
When intersecting also had no problem up to 3 row.Because, if it is vacant do not occur it is continuous on this degree, can be attached by its
Near conducting particles and trapped by projection.
In addition, it is usually undesirable nearby to there are multiple so continuous vacant intersecting regions, but if across with
The arrangement of conducting particles more than vacant region same number, the then stability that anisotropic conductive is connected has no problem.
(particle area ratio/occupancy ratio)
Further, on the reference area relative to anisotropic conductive film it is area, be present in it is complete in the area
The particle area ratio/occupancy ratio of portion's conducting particles, when in larger distance between size of lug, projection as FOG connections,
Usual more than 0.15%, preferably more than 0.35%, more preferably 1.4% above is effective.The upper limit of the situation is preferably 35%
Hereinafter, more preferably less than 32%.In addition, in the case of distance is less between size of lug, projection (such as COG connections), preferably
For 15~35%, more preferably 16~20%.If the scope, then by the anisotropic conductive film of the present invention be applied to it is each to
In the case that the opposite sex is conductively connected, the conducting reliability after better conduction at initial stage and aging can be realized, can also be entered
One step suppresses the generation of short circuit.Here, particle area ratio/occupancy ratio be relative to reference area it is area S, be present in the benchmark
The ratio for the area that whole conducting particles in region are occupied.The area that so-called whole conducting particles are occupied, when by conduction
When the average grain diameter of particle is set to R, the number of conducting particles is set into n, by (R/2)2× π × n is represented.Therefore, it is represented by
Particle area ratio/occupancy ratio (%)=[{ (R/2)2×π×n}/S]×100。
Be explained, when the average grain diameter of conducting particles be 2 μm, individual number density be 500/mm2(0.0005/μ
m2) and when X=Y=200D, X+Y=400D, the particle area ratio/occupancy ratio after calculating is 0.157%.When being averaged for conducting particles
Particle diameter is 3 μm, individual number density is 500/mm2(0.0005/μm2) and when X=Y=200D, X+Y=400D, after calculating
Particle area ratio/occupancy ratio is 0.35325%.When the average grain diameter of conducting particles be 3 μm, individual number density be 2000/mm2
(0.002/μm2) and when X=Y=200D, X+Y=400D, the particle area ratio/occupancy ratio after calculating is 1.413%.In addition,
When the average grain diameter of conducting particles be 30 μm, individual number density be 500/mm2(0.0005/μm2) and X=Y=200D, X+Y
During=400D, the particle area ratio/occupancy ratio after calculating is 35.325%.
(conducting particles)
As conducting particles, the conducting particles used in known anisotropic conductive film can be suitably selected to use.
For example, the metallics such as nickel, copper, silver, gold, palladium can be enumerated, with resin particles such as the coating metal such as nickel polyamide, poly- benzoguanamines
The coating metal resin particle on surface etc..In addition, from the viewpoint of operability during manufacture, conducting particles is averaged
Particle diameter is preferably 1~30 μm, more preferably 1~10 μm, particularly preferably 2~6 μm.Average grain diameter is as described above using image
Type particles distribution instrument is determined.Also it can be measured by viewed in plan.
The amount of conducting particles in anisotropic conductive film depends on the grid spacing of plane lattice pattern and led
The average grain diameter of charged particle, usually 300~40000/mm2。
(distance between neighboring lattice points)
In addition, distance is preferably greater than between neighboring lattice points in the plane lattice pattern assumed in anisotropic conductive film
0.5 times of the average grain diameter of conducting particles, more preferably more preferably more than 1 times, 1~20 times.If the scope, then
In the case that the anisotropic conductive film of the present invention is applied into anisotropic conductive connection, it can realize that better initial stage leads
Conducting reliability after the general character and aging, also can further suppress the generation of short circuit.
(insulating properties adhesive substratum)
As insulating properties adhesive substratum 11, it can suitably select to be used as insulating properties bonding base in known anisotropic conductive film
The material of layer is used.For example, the optical free radical comprising acrylate compounds and optical free radical polymerization initiator can be used to gather
Close property resin bed, the hot radical polymerizable resin layer comprising acrylate compounds and hot radical polymerization initiator, include
Epoxide and the hot cationically polymerizable resin bed of hot cationic polymerization, include epoxide and hot anion
Hot anionic polymerisation resin bed of polymerization initiator etc. or their curing resin layer.In addition, in these resin beds, visually
Need appropriate selection and contain silane coupler, pigment, antioxidant, ultra-violet absorber etc..
In addition, insulating properties adhesive substratum 11 can be by utilizing rubbing method by the coating composition comprising resin as described above
Film forming and drying are further solidified to form, or are formed beforehand through known method membranization.
The thickness of such insulating properties adhesive substratum 11 is preferably 1~30 μm, more preferably 2~15 μm.
(insulating properties bonding coating)
Coating 12 is bonded as insulating properties, can suitably select to be used as insulating properties bonding in known anisotropic conductive film
The material of coating is used.In addition, it is possible to use by being formed with the identical material of insulating properties adhesive substratum 11 described above
Layer.
In addition, insulating properties bonding coating 12 can be by utilizing coating by the coating composition comprising resin as described above
Method film forming and drying are further solidified to form, or are formed beforehand through known method membranization.
The thickness of such insulating properties bonding coating 12 is preferably 1~30 μm, more preferably 2~15 μm.
Further, in insulating properties adhesive substratum 11, insulating properties bonding coating 12, silica can optionally be added micro-
The insulating properties filler such as grain, aluminum oxide, aluminium hydroxide.Relative to resin 100 mass parts for constituting these layers, insulating properties filler is matched somebody with somebody
Resultant is preferably set to 3~40 mass parts.Thus, when anisotropic conductive is connected, even if insulating adhesive layer 10 is melted, also can
Suppress conducting particles 2 and unnecessary movement occurs because of the resin of melting.
(insulating properties adhesive substratum and insulating properties are bonded stacking, the embedment of conducting particles of coating)
In addition, clip in the case that insulating properties adhesive substratum 11 and insulative capping layer 12 be laminated by conducting particles 13, can
Carried out using known method.In this case, conducting particles 13 is present in the near interface of these layers.Here, " it is present in boundary
Near face " it is to represent, a part for conducting particles is embedded in the layer of a side, and remainder is embedded in the layer of the opposing party.This
Outside, conducting particles can be also embedded in insulating properties adhesive substratum.Also can shape in this case, not being laminated insulating properties bonding coating
Into.
<The manufacture of the anisotropic conductive film of first method>
Next, to being laminated with insulating properties adhesive substratum and insulating properties bonding coating and being led in their near interface
Charged particle is configured in the system of the anisotropic conductive film of the 1st aspect of the present invention of the structure of the lattice point of plane lattice pattern
The method of making is illustrated.The manufacture method has following process (I)~(V).On one side referring to the drawings, while to each operation specifically
It is bright.It is explained, is not limited to the manufacture method.
(process (I))
First, as shown in Figure 3A, transfer article 100 is prepared, transfer article 100 is formed with surface equivalent to plane lattice pattern
Lattice point cylindrical projection 101.Here, column is cylindric or prism-shaped (triangular prism, quadrangular, six prisms etc.).The column
Including cone.It is preferably cylindric.The height of convex portion 101 can be according to the terminal spacing of anisotropic conductive connection to be carried out, end
Sub- width, gap width, average grain diameter of conducting particles etc. determine, but the average grain diameter of conducting particles used in being preferably
1.2 times less than 2 times.In addition, the half breadth (width of a half height) of convex portion 101 is preferably conducting particles
More than 0.7 times of average grain diameter and less than 1.3 times.If this is these scopes highly with width, it can obtain avoiding continuous hair
Give birth to and come off and lack such effect.
Further, convex portion 101 has the flat top surface for that degree that conducting particles can be made stably to adhere to.
* the concrete example of transfer article
The transfer article that should prepare in the process (I) can be made using known method, for example, can be by processing metal
Plate and former disk (Yuan Disk are made), hardening resin composition is coated with to it and solidify so as to making.Specifically, will be flat
Metallic plate machining, the former disk of transfer article for being formed with recess corresponding with convex portion is made, in the recess formation face of the former disk
Coating constitutes the resin combination of transfer article, after solidification, is pulled open from former disk, so as to obtain transfer article.
(process (II))
Then, as shown in Figure 3 B, the transfer article 100 of multiple convex portions 101 will be formed with plane lattice pattern on surface
Micro- adhesion coating 102 is made at least top surface of convex portion 101.
* micro- adhesion coating of transfer article
Micro- adhesion coating 102 is until the insulating properties adhesive substratum that conducting particles is turned to invest composition anisotropic conductive film is
Only, display can temporarily keep the layer of the adhesion strength of conducting particles, be formed at least top surface of convex portion 101.Therefore, convex portion 101 is whole
Body can have micro- adherence.The thickness of micro- adhesion coating 102 can be according to material, particle diameter of conducting particles of micro- adhesion coating 102 etc.
And suitably determine.In addition, " micro- adhesion " is meant, it is more viscous than insulating properties when conducting particles is turned to invest insulating properties adhesive substratum
The adhesion strength for meeting basic unit is weak.
Such micro- adhesion coating 102 can be using micro- adhesion coating used in known anisotropic conductive film.For example, can
By by silicon-type adhesion agent composition or coating phase same material Nian Jie with insulating properties adhesive substratum, insulating properties adhesion coating
It is coated on the top surface of convex portion 101 and is formed.
(process (III))
Then, as shown in Figure 3 C, conducting particles 103 is made to be attached to micro- adhesion coating 102 of the convex portion 101 of transfer article 100.Tool
For body, conducting particles 103 is spread from the top of the convex portion 101 of transfer article 100, and micro- adhesion coating 102 will be not attached to
Conducting particles 103 is blown away using hair-dryer.Or, the direction in the face in Fig. 3 C can also reversed, makes the top surface of projection attached
The face that conducting particles is paved with one side.This is for stress not unnecessary to conducting particles application.By so only making to match somebody with somebody
Necessary conducting particles is attached to projection top surface when putting, so as to easily reclaim, recycle by conducting particles, and by conducting particles
The method for being filled in opening portion and taking out is compared, and economy is also more excellent.In addition, what conducting particles was filled in opening portion and taken out
In the case of method, the conducting particles not being filled is worried easily by unnecessary stress.
In addition, being narrower than the convex portion 101 of right side by the width adjustment of the convex portion 101 of left side in Fig. 3 C.As a result,
As shown in Figure 3 C, in left side and right side, there is difference sometimes in the cohesion mode of conducting particles 103.
(process (IV))
Then, as shown in Figure 3 D, the surface in the side for being attached with conducting particles 103 of transfer article 100 is overlapping and presses
The insulating properties adhesive substratum 104 of anisotropic conductive film should be constituted, so that 103 turns of conducting particles invests insulating properties bonding base
The one side (Fig. 3 E) of layer 104.In this case, it is preferred that by transfer article 100 with the downward mode in its convex portion 101 base Nian Jie with insulating properties
Layer 104 is overlapping and presses.Because, by being set to downward and drying, it easily will not be attached at the conductive particle of the top surface of convex portion
Son is removed.
(process (V))
As illustrated in Figure 3 F, for turning the insulating properties adhesive substratum 104 with conducting particles 103, attached face is turned from conducting particles
Side stacking insulating properties bonding coating 105.It can thus be concluded that to the present invention anisotropic conductive film 200.
It is explained, it is sometimes many on a lattice point of plane lattice pattern in the anisotropic conductive film 200
Individual conducting particles is contacted or approached in the horizontal direction each other and condenses configuration.Because, conducting particles is attached to transfer
During micro- adhesion coating of the convex portion of body, the width (width of micro- adhesion coating) of convex portion has substantially same with the average grain diameter of conducting particles
Deng size, it is taken as that be difficult to the presence of multiple conducting particles on a convex portion, but unnecessary conducting particles adheres to sometimes
In the end of micro- adhesion coating, or the conducting particles for coming off and not blowing away completely from convex portion remains in the convex portion of transfer article sometimes
Gap.
Next, the anisotropic conductive film and its manufacture method to the 2nd aspect of the present invention are while referring to the drawings one side
Describe in detail.
<The anisotropic conductive film of second method>
As shown in Fig. 4 (sectional view) and Fig. 5 A, Fig. 5 B (plane perspective view), anisotropic conductive film 10 of the invention has
Following structure:It is laminated with insulating properties adhesive substratum 11 and insulating properties bonding coating 12 and the near interface conductive particle at them
Son 13 is configured in the lattice point of plane lattice pattern (Fig. 5 A, Fig. 5 B dotted line).In Fig. 4 and Fig. 5 A, Fig. 5 B, plane lattice pattern
The length direction along anisotropic conductive film 10 and orthogonal to that direction (width) are assumed, but can be also assumed to be
To be integral inclined relative to length direction and width.Here, arrow A represents to be not configured with conduction in the lattice point of plane lattice
The position of particle, the position of so-called conducting particles " missing ".In addition, arrow B represents that conducting particles is in contact with each other and condensed (even
Knot) position, arrow C represents the position that conducting particles non-contactly condenses each other.Here, the meaning " non-contactly condensed "
It is that conducting particles is close with 25% scope of the average grain diameter no more than conducting particles each other.
(" missing " of conducting particles)
In the anisotropic conductive film of the present invention, the plane that will be assumed in any reference area of anisotropic conductive film
In grid pattern " lattice point for not configuring conducting particles " (Fig. 5 A A) relative to the ratios of whole lattice points, (conducting particles is lacked
Grid ratio) be set smaller than 5%, be preferably set to less than 4%, be more preferably set as more than 1% and less than 4%.By
This, in the case that the anisotropic conductive film of the present invention is applied into anisotropic conductive connection, can realize good initial stage
Good conducting reliability after conduction and aging, can also suppress the generation of short circuit.
(plane lattice pattern)
As plane lattice pattern, diamond check, hexagonal grid, square lattice, rectangular grid, parallel four can be enumerated
Side shape grid.Wherein, be preferably can closest packing hexagonal grid.
Here, as the reference area of anisotropic conductive film, though the whole face of anisotropic conductive film also may be selected, generally
The plane central portion for preferably selecting anisotropic conductive film is preferably relational expression (1), Yi Jiguan by meeting relationship below (A)
Be formula (2) and (3) while X and while the regions of general square shape that constitute of Y as reference area.
100D≤X+Y≤400D (A)
X+Y=100D (1)
X≥5D (2)
Y≥5D (3)
In addition, in the case where being applied to the FOG connections of larger connection area, depositing for the conducting particles in film can be made
It is few in amount, in that case of, it is as follows, preferably make that X and Y value is big, be preferably set to more than 20D respectively, and preferably " X+Y "
Numerical value be also the numerical value near 100D to 400D, be finally preferably set to 400D.
X+Y=400D
X≥20D
Y≥20D
In formula (A) and formula (1)~(3), above-mentioned formula, D is the average grain diameter of conducting particles.The average grain diameter of conducting particles can
Determined using the particles distribution instrument of image-type or laser type.Also it can be measured by viewed in plan.In addition, side Y be relative to
The length direction (reference picture 5A) of anisotropic conductive film is less than the straight line of ± 45 ° of scope, while X be with while the vertical straight lines of Y.
By such stipulated standard region, so as to make the shape of projection of the reference area to pressing conducting particles similar
Or it is approximate, the allowed band that conducting particles can as a result deviateed from plane lattice pattern becomes big, so as to economy and stably enter
Row anisotropic conductive is connected.In other words, by the way that the minimum edge of the reference area is set into more than 5 times of conductive particle diameter, so that
In this range, also can be by any projection even if the position that there is conducting particles in the range of assuming is deviateed, lacks, approached
Trap, and exceedingly condensed in the gap not between projection, therefore, it is possible to effectively carry out anisotropic conductive connection.
In addition, the reason for minimum edge is set to more than 5 times of conductive particle diameter is, it is however generally that, in order to by each to different
Effectively trapped at least 1 side for the projection that property is conductively connected, it is necessary to be larger than the average grain diameter of conducting particles, and
For the gap between projection, from considering the reason for preventing short circuit, in addition it is also necessary to be preferably set to the average grain of conducting particles
More than 2 times of the size in footpath.In other words, because, when paying close attention to a circular conducting particles as benchmark, if
Length (i.e. 5D) obtained from adding 4 times of length (4D) of the particle diameter with the average grain diameter D of the conducting particles is the same of diameter
Do not occur in heart circle bad outside assuming, then it is assumed that above-mentioned important document can be met.Additionally because of between projection when forming micro- spacing
Minimum range be, for example, less than 4 times of conductive particle diameter.
(cohesion of conducting particles)
In addition, in the anisotropic conductive film of the present invention, multiple conducting particles condense and configured in plane lattice pattern
Lattice point (Fig. 5 A arrow B and arrow C) is preferably less than 15% relative to the ratio of whole lattice points, may be greater than 10% and is less than
15%, as long as then just being had no problem in practical for more than 11% and less than 14%.If the ratio for the lattice point for condensing and configuring
For the scope, then in the case of the anisotropic conductive film of the present invention being applied into anisotropic conductive connection, it can realize more
Conducting reliability after good conduction at initial stage and aging, also can further suppress the generation of short circuit.Here, for conduction
For the state that particle aggregates with one another, not only including situation about directly linking the arrow B such as Fig. 5 A, also including such as Fig. 5 A
Arrow C as conducting particles do not link directly each other but mutual situation closely.Close being preferably spaced is led
Within the 25% of the average grain diameter of charged particle.In addition, for the cohesion degree of the conducting particles on a lattice point, may have super
The situation that the conducting particles of 2 is linked with chain is crossed, but from the viewpoint of short circuit is suppressed, preferably condensing to lack, preferably greater than 2
Individual conducting particles does not condense.
In addition, in the second method, missing and the total of cohesion are preferably less than 20%.
In the present invention, the cohesion direction for condensing the conducting particles of configuration (is usually by the center of gravity of 2 conducting particles of cohesion
The line direction connected) deviate in a thickness direction, the arrow B, arrow C such as Fig. 4, formation is led relative to anisotropy
The inclined direction of in-plane of electrolemma.In order to not hinder to squeeze into connection, inclined degree is preferably 5~45 °, more preferably
For 10~40 °.In addition, the reason for occurring such tilt is, in the case of the end that projection is present in during connection, it may be such that
An only side can also be captured (overlapping if do not tilted, to be impacted to squeezing into).In addition, cohesion is even if for level
There is no special problem.
(configuration of conducting particles)
Conducting particles is preferably continuously configured on the direction vertical with the length direction of film with more than 11, more preferably with
More than 13 continuously configure.Because, may be right if omission occurs on the length direction of projection in conducting particles
Anisotropic conductive connection causes obstacle.In this case, it is preferred that having length direction of 3 row along film and continuous conducting particles is complete
Portion meets conditions above, more preferably has 5 row all to meet conditions above.Thereby, it is possible to make the conductive particle subnumber trapped by projection
More than certain, the anisotropic conductive connection that can be stablized.
In the case that conducting particles condenses, around 2 conducting particles condensed, 2 conducting particles for having linked
Group be preferably less than 3 groups, more preferably less than 2 groups, be even more preferably less than 1 group.Because, if 2 cohesions
Conducting particles it is intensive exist, then can turn into the factor for occurring short circuit.On the basis of above-mentioned condition is met, 2 cohesions
Conducting particles continuous preferably on a direction of arrangement occur at 3.
In addition, the omission on conducting particles, preferably on the length direction of film more than 4 it is continuous vacant and with film
The vertical direction of length direction on more than 4 it is continuous vacant non-intersect, more preferably any more than 4 continuous omissions every
More than one non-conterminous as conducting particles of lattice point, even more preferably any more than 4 continuous omissions across
Two or more turns into the conducting particles of lattice point and non-conterminous.Intersect on such vacant, for the omission on a direction,
It is simultaneously intersecting also to be had no problem up to 3 row.Because, if it is vacant do not occur it is continuous on this degree, can be by it
Neighbouring conducting particles and trapped by projection.
In addition, it is usually undesirable nearby to there are multiple so continuous vacant intersecting regions, but if across with
The arrangement of conducting particles more than vacant region same number, the then stability that anisotropic conductive is connected has no problem.
In addition, as shown in Figure 5 B, from the aspect of short circuit is suppressed, be configured with the conducting particles 13 of cohesion lattice point P1 and
It is preferably with respect to the average grain diameter of conducting particles with the distance between the center P2 of circle of the inscribe of conducting particles 13 of cohesion L
Less than 25%.
(particle area ratio/occupancy ratio)
Further, on any reference area relative to anisotropic conductive film it is area, be present in the area
Whole conducting particles particle area ratio/occupancy ratio, for feelings in larger distance between size of lug, projection as FOG connections
Condition, usual more than 0.15%, preferably more than 0.35%, more preferably 1.4% are above is effective.The upper limit of the situation is preferably
Less than 35%, more preferably less than 32%.In addition, in the case of distance is less between size of lug, projection (such as COG connections),
More preferably 15~35%, particularly preferably 20~25%.If the scope, then by the anisotropic conductive of the present invention
In the case that film is applied to anisotropic conductive connection, it can show that the conducting after better conduction at initial stage and aging is reliable
Property, it also can further suppress the generation of short circuit.Here, particle area ratio/occupancy ratio is relative to the area of arbitrary reference area
S, the area that whole conducting particles for being present in the reference area are occupied ratio.Occupied for whole conducting particles
Area for, when the average grain diameter of conducting particles to be set to R, the number of conducting particles is set into n, by (R/2)2×π×n
Represent.Therefore, it is represented by particle area ratio/occupancy ratio (%)=[{ (R/2)2×π×n}/S]×100。
Be explained, when the average grain diameter of conducting particles be 2 μm, individual number density be 500/mm2(0.0005/μ
m2) and when X=Y=200D, X+Y=400D, the particle area ratio/occupancy ratio after calculating is 0.157%.When being averaged for conducting particles
Particle diameter is 3 μm, individual number density is 500/mm2(0.0005/μm2) and when X=Y=200D, X+Y=400D, after calculating
Particle area ratio/occupancy ratio is 0.35325%.When the average grain diameter of conducting particles be 3 μm, individual number density be 2000/mm2
(0.002/μm2) and when X=Y=200D, X+Y=400D, the particle area ratio/occupancy ratio after calculating is 1.413%.In addition,
When the average grain diameter of conducting particles be 30 μm, individual number density be 500/mm2(0.0005/μm2) and X=Y=200D, X+Y
During=400D, the particle area ratio/occupancy ratio after calculating is 35.325%.
(conducting particles)
As conducting particles, the conducting particles used in known anisotropic conductive film can be suitably selected to use.
For example, the metallics such as nickel, copper, silver, gold, palladium can be enumerated, with resin particles such as the coating metal such as nickel polyamide, poly- benzoguanamines
The coating metal resin particle on surface etc..In addition, from the viewpoint of operability during manufacture, conducting particles is averaged
Particle diameter is preferably 1~30 μm, more preferably 1~10 μm, particularly preferably 2~6 μm.Average grain diameter is as described above using image
Type or laser type particles distribution instrument are determined.
The amount of conducting particles in anisotropic conductive film depends on the grid spacing of plane lattice pattern and led
The average grain diameter of charged particle, usually 300~40000/mm2。
(distance between neighboring lattice points)
In addition, distance is preferably greater than between neighboring lattice points in the plane lattice pattern assumed in anisotropic conductive film
0.5 times of the average grain diameter of conducting particles, more preferably more preferably more than 1 times, 1~20 times.If the scope, then
In the case that the anisotropic conductive film of the present invention is applied into anisotropic conductive connection, it can show that better initial stage leads
Conducting reliability after the general character and aging, also can further suppress the generation of short circuit.
(insulating properties adhesive substratum)
As insulating properties adhesive substratum 11, it can suitably select to be used as insulating properties bonding base in known anisotropic conductive film
The material of layer is used.For example, the optical free radical comprising acrylate compounds and optical free radical polymerization initiator can be used to gather
Close property resin bed, the hot radical polymerizable resin layer comprising acrylate compounds and hot radical polymerization initiator, include
Epoxide and the hot cationically polymerizable resin bed of hot cationic polymerization, include epoxide and hot anion
Hot anionic polymerisation resin bed of polymerization initiator etc. or their curing resin layer.In addition, in these resin beds, visually
Need appropriate selection and contain silane coupler, pigment, antioxidant, ultra-violet absorber etc..
In addition, insulating properties adhesive substratum 11 can be by utilizing rubbing method by the coating composition comprising resin as described above
Film forming and drying are further solidified to form, or are formed beforehand through known method membranization.
The thickness of such insulating properties adhesive substratum 11 is preferably 1~30 μm, more preferably 2~15 μm.
(insulating properties bonding coating)
Coating 12 is bonded as insulating properties, can suitably select to be used as insulating properties bonding in known anisotropic conductive film
The material of coating is used.In addition, it is possible to use by being formed with the previously described identical material of insulating properties adhesive substratum 11
Layer.
In addition, insulating properties bonding coating 12 can be by utilizing coating by the coating composition comprising resin as described above
Method film forming and drying are further solidified to form, or are formed beforehand through known method membranization.
The thickness of such insulating properties bonding coating 12 is preferably 1~30 μm, more preferably 2~15 μm.
Further, in insulating properties adhesive substratum 11, insulating properties bonding coating 12, silica can optionally be added micro-
The insulating properties filler such as grain, aluminum oxide, aluminium hydroxide.Relative to resin 100 mass parts for constituting these layers, insulating properties filler is matched somebody with somebody
Resultant is preferably set to 3~40 mass parts.Thus, when anisotropic conductive is connected, even if insulating adhesive layer 10 is melted, also can
Suppress conducting particles 2 and unnecessary movement occurs because of the resin of melting.
(insulating properties adhesive substratum and insulating properties are bonded stacking, the embedment of conducting particles of coating)
In addition, the situation for clipping conducting particles 13 and being laminated insulating properties adhesive substratum 11 and insulating properties bonding coating 12
Under, it can be carried out using known method.In this case, conducting particles 13 is present in the near interface of these layers.Here, " deposit
It is near interface " it is to represent, a part for conducting particles is embedded in the layer of a side, and remainder is embedded in the layer of the opposing party
In.In addition, also conducting particles can be embedded in insulating properties adhesive substratum.In this case, not being laminated insulating properties bonding coating
It can be formed.
<The manufacture of the anisotropic conductive film of second method>
Next, to being laminated with insulating properties adhesive substratum and insulating properties bonding coating and being led in their near interface
Charged particle is configured in the system of the anisotropic conductive film of the 2nd aspect of the present invention of the structure of the lattice point of plane lattice pattern
The method of making is illustrated.The manufacture method has following process (I)~(V).While referring to the drawings one side to each operation specifically
It is bright.It is explained, is not limited to the manufacture method.
(process (I))
First, as shown in Figure 6A, transfer article 100 is prepared, transfer article 100 is formed with surface equivalent to plane lattice pattern
Lattice point cylindrical projection 101.The column includes cone.It is preferably cylindric.The height of convex portion 101 can according to carry out it is each to
Terminal spacing, termination width, gap width, average grain diameter of conducting particles that the opposite sex is conductively connected etc. are determined, but are preferably
2 times of the average grain diameter of used conducting particles are less than 4 times.In addition, a half breadth (half height for convex portion 101
The width at place) it is preferably less than more than 1.4 times 3.6 times of average grain diameter of conducting particles.If this is these highly with width
Scope, then can obtain and not fall off excessively, only sporadically occur the such effect of missing.
Further, convex portion 101 has the top surface of the substantially flat for that degree that conducting particles can be made stably to adhere to.
* the concrete example of transfer article
The transfer article that should prepare in the process (I) can be made using known method, for example, can be by processing metal
Plate and former disk is made, hardening resin composition is coated with to it and solidification is so as to making.Specifically, flat metallic plate is cut
Processing is cut, the former disk of transfer article for being formed with recess corresponding with convex portion is made, constitutes and turns in the recess formation face coating of the former disk
The resin combination of body is printed, after solidification, is pulled open from former disk, so as to obtain transfer article.
(process (II))
Then, as shown in Figure 6B, the transfer article 100 of multiple convex portions 101 will be formed with surface with plane lattice pattern
Micro- adhesion coating 102 is made at least top surface of convex portion 101.
* micro- adhesion coating of transfer article
Micro- adhesion coating 102 is until the insulating properties adhesive substratum that conducting particles is turned to be attached to composition anisotropic conductive film is
Only, display can temporarily keep the layer of the adhesion strength of conducting particles, be formed at least top surface of convex portion 101.Therefore, convex portion 101 is whole
Body can have micro- adherence.The thickness of micro- adhesion coating 102 can be according to material, particle diameter of conducting particles of micro- adhesion coating 102 etc.
And suitably determine.In addition, " micro- adhesion " is meant, it is more viscous than insulating properties when conducting particles is turned to invest insulating properties adhesive substratum
The adhesion strength for meeting basic unit is weak.
Such micro- adhesion coating 102 can be using micro- adhesion coating used in known anisotropic conductive film.For example, can
By by silicon-type adhesion agent composition or coating phase same material Nian Jie with insulating properties adhesive substratum, insulating properties adhesion
Layer is coated on the top surface of convex portion 101 and formed.
(process (III))
Then, as shown in Figure 6 C, conducting particles 103 is made to be attached to micro- adhesion coating 102 of the convex portion 101 of transfer article 100.Tool
For body, conducting particles 103 is spread from the top of the convex portion 101 of transfer article 100, and micro- adhesion coating 102 will be not attached to
Conducting particles 103 is blown away using hair-dryer.In this case, on a part of convex portion 101, frequency that can to some degree is sent out
Raw conducting particles is attached to the side of convex portion 101 because electrostatic etc. is acted on, and can not be removed by drying.
In addition, the direction in the face in Fig. 6 C can also reversed, the top surface of projection is attached to one side and be paved with conducting particles
Face.This is for stress not unnecessary to conducting particles application.By so only making necessary conducting particles during configuration attached
In projection top surface, so that easily by conducting particles recycling, with conducting particles is filled in into opening portion and the side taken out
Method is compared, and economy is also more excellent.In addition, in the case that conducting particles is filled in into the method for opening portion and taking-up, worry is not
The conducting particles being filled is easily by unnecessary stress.
In addition, being the convex portion than right side by the width adjustment of micro- adhesion coating 102 of the convex portion 101 of left side in Fig. 6 C
101 micro- adhesion coating 102 is narrow.As a result, in left side and right side, as shown in Figure 6 C, the cohesion mode of conducting particles 103 has
When there is difference.
(process (IV))
Then, as shown in Figure 6 D, the surface in the side for being attached with conducting particles 103 of transfer article 100 is overlapping and presses
The insulating properties adhesive substratum 104 of anisotropic conductive film should be constituted, so that 103 turns of conducting particles invests insulating properties bonding base
The one side (Fig. 6 E) of layer 104.In this case, it is preferred that by transfer article 100 with the downward mode in its convex portion 101 base Nian Jie with insulating properties
Layer 104 is overlapping and presses.By being set to downward and drying, the conducting particles for the top surface that easily will can not be attached at convex portion is gone
Remove.
(process (V))
As fig 6 f illustrates, for turning the insulating properties adhesive substratum 104 with conducting particles 103, attached face is turned from conducting particles
Side stacking insulating properties bonding coating 105.Thus the anisotropic conductive film 200 of the present invention can be obtained.
Next, while referring to the drawings anisotropic conductive film and its manufacture method of the one side to the 3rd aspect of the present invention
Describe in detail.
<The anisotropic conductive film of Third Way>
As shown in Fig. 7 (sectional view) and Fig. 8 (plane perspective view), anisotropic conductive film 10 of the invention has following knot
Structure:It is laminated with insulating properties adhesive substratum 11 and insulating properties bonding coating 12 and the quilt of near interface conducting particles 13 at them
It is configured at the lattice point of plane lattice pattern (Fig. 8 dotted line).In Fig. 7 and Fig. 8, plane lattice pattern is assumed along each to different
Property conducting film 10 length direction and orthogonal to that direction (width), but can be also assumed to relative to length direction and
Width is integral inclined.Here, arrow A represents that the lattice point in plane lattice is not configured with the position of conducting particles, so-called led
The position of charged particle " missing ".In addition, arrow B represents the position that conducting particles is in contact with each other and condensed.
(" missing " of conducting particles)
In the anisotropic conductive film of the present invention, the plane lattice that will be assumed in the reference area of anisotropic conductive film
Ratio (the grid that conducting particles has been lacked of " lattice point for not configuring conducting particles " (Fig. 8 A) relative to whole lattice points in pattern
Ratio) be set as less than 15%, preferably less than 10%, more preferably 6~10%.Thus, by the anisotropy of the present invention
In the case that conducting film is applied to anisotropic conductive connection, it can realize good after good conduction at initial stage and aging
Reliability is turned on, can also suppress the generation of short circuit.
(plane lattice pattern)
As plane lattice pattern, diamond check, hexagonal grid, square lattice, rectangular grid, parallel four can be enumerated
Side shape grid.Wherein, be preferably can closest packing hexagonal grid.
Here, as the reference area of anisotropic conductive film, though the whole face of anisotropic conductive film also may be selected, generally
The plane central portion for preferably selecting anisotropic conductive film is preferably relational expression (1), Yi Jiguan by meeting relationship below (A)
Be formula (2) and (3) while X and while the regions of general square shape that constitute of Y as reference area.
100D≤X+Y≤400D (A)
X+Y=100D (1)
X≥5D (2)
Y≥5D (3)
In addition, in the case where being applied to the FOG connections of larger connection area, depositing for the conducting particles in film can be made
It is few in amount, in that case of, it is as follows, preferably make that X and Y value is big, be preferably set to more than 20D respectively, and preferably " X+Y "
Numerical value be also the numerical value near 100D to 400D, be finally preferably set to 400D.
X+Y=400D
X≥20D
Y≥20D
In formula (A) and (1)~(3), above-mentioned formula, D is the average grain diameter of conducting particles.The average grain diameter of conducting particles can profit
Determined with image-type or laser type particles distribution instrument.Also it can be measured by viewed in plan.In addition, side Y be relative to it is each to
The length direction (Fig. 8 references) of anisotropic conductive film is less than the straight line of ± 45 ° of scope, while X be with while the vertical straight lines of Y.
By such stipulated standard region, so as to make the shape of projection of the reference area to pressing conducting particles similar
Or it is approximate, the allowed band that conducting particles can as a result deviateed from plane lattice pattern becomes big, and economy and stably progress are each
Anisotropy is conductively connected.In other words, by the way that the minimum edge of the reference area is set into more than 5 times of conductive particle diameter, so that at this
In scope, even if the position that there is conducting particles in the range of assuming is deviateed, lacks, approached, it can also be trapped by any projection,
And exceedingly condensed in the gap not between projection, therefore, it is possible to effectively carry out anisotropic conductive connection.
In addition, the reason for minimum edge is set to more than 5 times of conductive particle diameter is, it is however generally that, in order to by each to different
At least 1 side for the projection that property is conductively connected effectively is trapped, it is necessary to be larger than the average grain diameter of conducting particles, and right
For gap between projection, consider from the reason for preventing short circuit, it is necessary to be preferably set to the 2 of the average grain diameter of conducting particles
Size more than times.In other words, because, when paying close attention to a circular conducting particles as benchmark, if led with this
The average grain diameter D of charged particle is plus length (i.e. 5D) obtained from 4 times of length (4D) of the particle diameter in the concentric circles of diameter
Do not occur bad outside assuming, then it is assumed that above-mentioned important document can be met.Additionally because of the minimum between projection when forming micro- spacing
Distance is, for example, less than 4 times of conductive particle diameter.
(cohesion of conducting particles)
In addition, in the anisotropic conductive film of the present invention, multiple conducting particles condense and configured in plane lattice pattern
Lattice point (Fig. 8 B) is the scope being had no problem in less than 10%, preferably less than 9%, practicality relative to the ratio of whole lattice points
It is 5~9%.If the ratio for condensing the lattice point of configuration is the scope, the anisotropic conductive film of the present invention is applied to each
In the case that anisotropy is conductively connected, the conducting reliability after better conduction at initial stage and aging can be shown, also can
Further suppress the generation of short circuit.Here, for the cohesion degree of the conducting particles on a lattice point, from the sight for suppressing short circuit
Point considers, preferably few, preferably more than 2.
In addition, in the Third Way, missing and the total of cohesion are preferably less than 25%.
(configuration of conducting particles)
Conducting particles is preferably continuously configured on the direction vertical with the length direction of film with more than 11, more preferably with
More than 13 continuously configure.Because, may be right if omission occurs on the length direction of projection in conducting particles
Anisotropic conductive connection causes obstacle.In this case, it is preferred that having length direction of 3 row along film and continuous conducting particles is complete
Portion meets conditions above, more preferably has 5 row all to meet conditions above.Thereby, it is possible to make the conductive particle subnumber trapped by projection
More than certain, the anisotropic conductive connection that can be stablized.
In the case that conducting particles condenses, around 2 conducting particles condensed, 2 conducting particles for having linked
Group be preferably less than 3 groups, more preferably less than 2 groups, be even more preferably less than 1 group.Because, if 2 cohesions
Conducting particles it is intensive exist, then can turn into occur short circuit factor.
In addition, the omission on conducting particles, preferably on the length direction of film more than 4 it is continuous vacant and with film
The vertical direction of length direction on more than 4 it is continuous vacant non-intersect, more preferably any more than 4 continuous omissions every
More than one non-conterminous as conducting particles of lattice point, even more preferably any more than 4 continuous omissions across
Two or more turns into the conducting particles of lattice point and non-conterminous.On such vacant intersecting, for the omission in a direction, together
When intersecting also had no problem up to 3 row.Because, if it is vacant do not occur it is continuous on this degree, can be attached by its
Near conducting particles and trapped by projection.
In addition, it is usually undesirable nearby to there are multiple so continuous vacant intersecting regions, but if across with
The arrangement of conducting particles more than vacant region same number, the then stability that anisotropic conductive is connected has no problem.Tool
For body, on 7 × 7 matrix centered on vacant region, if there is the conducting particles of 2 connections more than at 1,
Then had no problem in practicality.
(particle area ratio/occupancy ratio)
Further, on the reference area relative to anisotropic conductive film it is area, be present in it is complete in the area
The particle area ratio/occupancy ratio of portion's conducting particles, when in larger distance between size of lug, projection as FOG connections, leads to
Normal more than 0.15%, preferably more than 0.35%, more preferably 1.4% above is effective.The upper limit of the situation be preferably 35% with
Under, more preferably less than 32%.In addition, in the case of distance is less between size of lug, projection (such as COG connections), further
Preferably 15~35%, particularly preferably 16~20%.If the scope, then by the anisotropic conductive film application of the present invention
In the case that anisotropic conductive is connected, the conducting reliability after better conduction at initial stage and aging can be realized,
The generation of short circuit can further be suppressed.Here, particle area ratio/occupancy ratio be relative to reference area it is area S, be present in
The ratio for the area that whole conducting particles in the reference area are occupied.For area that whole conducting particles are occupied and
Speech, when the average grain diameter of conducting particles to be set to R, the number of conducting particles is set into n, by (R/2)2× π × n is represented.Cause
This, is represented by particle area ratio/occupancy ratio (%)=[{ (R/2)2×π×n}/S]×100。
Be explained, when the average grain diameter of conducting particles be 2 μm, individual number density be 500/mm2(0.0005/μ
m2) and when X=Y=200D, X+Y=400D, the particle area ratio/occupancy ratio after calculating is 0.157%.When being averaged for conducting particles
Particle diameter is 3 μm, individual number density is 500/mm2(0.0005/μm2) and when X=Y=200D, X+Y=400D, after calculating
Particle area ratio/occupancy ratio is 0.35325%.When the average grain diameter of conducting particles be 3 μm, individual number density be 2000/mm2
(0.002/μm2) and when X=Y=200D, X+Y=400D, the particle area ratio/occupancy ratio after calculating is 1.413%.In addition,
When the average grain diameter of conducting particles be 30 μm, individual number density be 500/mm2(0.0005/μm2) and X=Y=200D, X+Y
During=400D, the particle area ratio/occupancy ratio after calculating is 35.325%.
(conducting particles)
As conducting particles, the conducting particles used in known anisotropic conductive film can be suitably selected to use.
For example, the metallics such as nickel, copper, silver, gold, palladium can be enumerated, with resin particles such as the coating metal such as nickel polyamide, poly- benzoguanamines
The coating metal resin particle on surface etc..In addition, from the viewpoint of operability during manufacture, conducting particles is averaged
Particle diameter is preferably 1~30 μm, more preferably 1~10 μm, more preferably 2~6 μm.Average grain diameter is as described above using figure
Determined as type or laser type particles distribution instrument.
The amount of conducting particles in anisotropic conductive film depends on the grid spacing of plane lattice pattern and led
The average grain diameter of charged particle, usually 300~40000/mm2。
(distance between neighboring lattice points)
In addition, distance is preferably greater than and led between neighboring lattice points in the plane lattice pattern assumed in anisotropic conductive film
0.5 times of the average grain diameter of charged particle, more preferably more preferably more than 1 times, 1~20 times.If the scope, then will
In the case that the anisotropic conductive film of the present invention is applied to anisotropic conductive connection, better conducting at initial stage can be shown
Property and aging after conducting reliability, also can further suppress short circuit generation.
(insulating properties adhesive substratum)
As insulating properties adhesive substratum 11, it can suitably select to be used as insulating properties bonding base in known anisotropic conductive film
The material of layer is used.For example, the optical free radical comprising acrylate compounds and optical free radical polymerization initiator can be used to gather
Close property resin bed, the hot radical polymerizable resin layer comprising acrylate compounds and hot radical polymerization initiator, include
Epoxide and the hot cationically polymerizable resin bed of hot cationic polymerization, include epoxide and hot anion
Hot anionic polymerisation resin bed of polymerization initiator etc. or their curing resin layer.In addition, in these resin beds, visually
Need appropriate selection and contain silane coupler, pigment, antioxidant, ultra-violet absorber etc..
In addition, insulating properties adhesive substratum 11 can be by utilizing rubbing method by the coating composition comprising resin as described above
Film forming and drying are further solidified to form, or are formed beforehand through known method membranization.
The thickness of such insulating properties adhesive substratum 11 is preferably 1~30 μm, more preferably 2~15 μm.
(insulating properties bonding coating)
Coating 12 is bonded as insulating properties, can suitably select to be used as insulating properties bonding in known anisotropic conductive film
The material of coating is used.In addition, it is possible to use by being formed with the previously described identical material of insulating properties adhesive substratum 11
Layer.
In addition, insulating properties bonding coating 12 can be by utilizing coating by the coating composition comprising resin as described above
Method film forming and drying are further solidified to form, or are formed beforehand through known method membranization.
The thickness of such insulating properties bonding coating 12 is preferably 1~30 μm, more preferably 2~15 μm.
Further, in insulating properties adhesive substratum 11, insulating properties bonding coating 12, silica can optionally be added micro-
The insulating properties filler such as grain, aluminum oxide, aluminium hydroxide.Relative to resin 100 mass parts for constituting these layers, insulating properties filler is matched somebody with somebody
Resultant is preferably set to 3~40 mass parts.Thus, when anisotropic conductive is connected, even if insulating adhesive layer 10 is melted, also can
Suppress conducting particles 2 and unnecessary movement occurs because of the resin of melting.
(insulating properties adhesive substratum and insulating properties are bonded stacking, the embedment of conducting particles of coating)
In addition, the situation for clipping conducting particles 13 and being laminated insulating properties adhesive substratum 11 and insulating properties bonding coating 12
Under, it can be carried out using known method.In this case, conducting particles 13 is present in the near interface of these layers.Here, " deposit
It is near interface " it is to represent, a part for conducting particles is embedded in the layer of a side, and remainder is embedded in the layer of the opposing party
In.In addition, conducting particles can be embedded in insulating properties adhesive substratum.Also may be used in this case, not being laminated insulating properties bonding coating
Formed.
<The manufacture of the anisotropic conductive film of Third Way>
Next, to being laminated with insulating properties adhesive substratum and insulating properties bonding coating and being led in their near interface
Charged particle is configured in the system of the anisotropic conductive film of the 3rd aspect of the present invention of the structure of the lattice point of plane lattice pattern
The method of making is illustrated.The manufacture method has following process (I)~(V).While referring to the drawings one side to each operation specifically
It is bright.In addition, being not limited to the manufacture method.
(process (I))
First, as shown in Figure 9 A, transfer article 100 is prepared, transfer article 100 is formed with surface equivalent to plane lattice pattern
Lattice point convex portion 101.Here, as the shape of convex portion 101, column (such as cylinder, triangular prism, quadrangular, six ribs can be enumerated
Post etc.), substantially column, hemispherical, circular cone shape, pyramid mesa-shaped etc..The height of convex portion 101 can be led according to anisotropy to be carried out
Terminal spacing, termination width, gap width, average grain diameter of conducting particles of electrical connection etc. are preferably used to determine
1.2 times of average grain diameter of conducting particles less than 2 times.In addition, the half breadth of convex portion 101 (half height
Width) it is preferably less than more than 1.4 times 3.6 times of average grain diameter of conducting particles.If this is these scopes highly with width,
It can then obtain to avoid recurring and come off and lack such effect.
Further, convex portion 101 has the flat top surface for that degree that conducting particles can be made stably to adhere to.
* the concrete example of transfer article
The transfer article that should prepare in the process (I) can be made using known method, for example, can be by processing metal
Plate and former disk is made, hardening resin composition is coated with to it and is solidified so as to making.Specifically, flat metallic plate is cut
Processing is cut, the former disk of transfer article for being formed with recess corresponding with convex portion is made, constitutes and turns in the recess formation face coating of the former disk
The resin combination of body is printed, after solidification, is pulled open from former disk, so as to obtain transfer article.
(process (II))
Then, as shown in Figure 9 B, the transfer article 100 of multiple convex portions 101 will be formed with plane lattice pattern on the surface
At least top surface of convex portion 101 micro- adhesion coating 102 is made.
* micro- adhesion coating of transfer article
Micro- adhesion coating 102 is until the insulating properties adhesive substratum that conducting particles is turned to be attached to composition anisotropic conductive film is
Only, display can temporarily keep the layer of the adhesion strength of conducting particles, be formed at least top surface of convex portion 101.Therefore, convex portion 101 is whole
Body can have micro- adherence.The thickness of micro- adhesion coating 102 can according to material, particle diameter of conducting particles of micro- adhesion coating 102 etc. come
It is suitable to determine.In addition, " micro- adhesion " is meant, when conducting particles is turned to invest insulating properties adhesive substratum, than insulating properties bonding
The adhesion strength of basic unit is weak.
Such micro- adhesion coating 102 can be using micro- adhesion coating used in known anisotropic conductive film.For example, can
By by silicon-type adhesion agent composition or coating phase same material Nian Jie with insulating properties adhesive substratum, insulating properties adhesion
Layer is coated on the top surface of convex portion 101 and formed.
(process (III))
Then, as shown in Figure 9 C, conducting particles 103 is made to be attached to micro- adhesion coating 102 of the convex portion 101 of transfer article 100.Tool
For body, conducting particles 103 is spread from the top of the convex portion 101 of transfer article 100, and micro- adhesion coating 102 will be not attached to
Conducting particles 103 is blown away using hair-dryer.In this case, on a part of convex portion 101, frequency that can to some degree is sent out
Raw conducting particles is attached to the side of convex portion 101 because electrostatic etc. is acted on, and can not be removed by drying.
In addition, the direction in the face in Fig. 9 C can also reversed, the top surface of projection is attached to one side and be paved with conducting particles
Face.This is for stress not unnecessary to conducting particles application.By so only making necessary conducting particles during configuration attached
In projection top surface, so that easily by conducting particles recycling, with conducting particles is filled in into opening portion and the side taken out
Method is compared, and economy is also more excellent.In addition, in the case that conducting particles is filled in into the method for opening portion and taking-up, worry is not
The conducting particles being filled is easily by unnecessary stress.
(process (IV))
Then, as shown in fig. 9d, the surface in the side for being attached with conducting particles 103 of transfer article 100 is overlapping and presses
The insulating properties adhesive substratum 104 of anisotropic conductive film should be constituted, so that 103 turns of conducting particles invests insulating properties bonding base
The one side (Fig. 9 E) of layer 104.In this case, it is preferred that by transfer article 100 with the downward mode in its convex portion 101 base Nian Jie with insulating properties
Layer 104 is overlapping and presses.By being set to downward and drying, the conducting particles that easily will not be attached at the top surface of convex portion is removed.
(process (V))
As shown in fig. 9f, for turning the insulating properties adhesive substratum 104 with conducting particles 103, attached face is turned from conducting particles
Side stacking insulating properties bonding coating 105.Thus the anisotropic conductive film 200 of the present invention can be obtained.
In addition, in the anisotropic conductive film 200, multiple conducting particles are configured in one of plane lattice pattern each other
In the case of on lattice point, they are configured to contact in the horizontal direction.This is to prevent particle number density from excessively reducing.
Next, while referring to the drawings anisotropic conductive film and its manufacture method of the one side to the 4th aspect of the present invention
Describe in detail.
<The anisotropic conductive film of fourth way>
As shown in Figure 10 (sectional view) and Figure 11 (plane perspective view), anisotropic conductive film 10 of the invention has as follows
Structure:It is laminated with insulating properties adhesive substratum 11 and insulating properties bonding coating 12 and the near interface conducting particles 13 at them
It is configured in the lattice point of plane lattice pattern (Figure 11 dotted line).In Figure 10 and Figure 11, plane lattice pattern be assumed along
The length direction of anisotropic conductive film 10 and orthogonal to that direction (width), but can also be assumed relative to length
Direction and width are integral inclined.Here, arrow A represent the lattice point in plane lattice be not configured with conducting particles position,
The position of so-called conducting particles " missing ".In addition, arrow B represents the position that conducting particles non-contactly condenses each other.Here,
" non-contactly condensing " means that conducting particles is connect with 50% scope of the average grain diameter no more than conducting particles each other
Closely.
(" missing " of conducting particles)
In the anisotropic conductive film of the present invention, the plane lattice that will be assumed in the reference area of anisotropic conductive film
Ratio (the lattice that conducting particles has been lacked of " lattice point for not configuring conducting particles " (Figure 11 A) relative to whole lattice points in pattern
The ratio of son) 10% is set smaller than, it is preferably set to less than 6%.Thus, the anisotropic conductive film of the present invention is applied to each
In the case that anisotropy is conductively connected, the good conducting reliability after good conduction at initial stage and aging can be realized,
The generation of short circuit can be suppressed.
(plane lattice pattern)
As plane lattice pattern, diamond check, hexagonal grid, square lattice, rectangular grid, parallel four can be enumerated
Side shape grid.Wherein, be preferably can closest packing hexagonal grid.
Here, as the reference area of anisotropic conductive film, though the whole face of anisotropic conductive film also may be selected, generally
Preferably select in the plane central portion of anisotropic conductive film by meet relationship below (A) be preferably relational expression (1) and
Relational expression (2) and (3) while X and while the regions of general square shape that constitute of Y be used as reference area.
100D≤X+Y≤400D (A)
X+Y=100D (1)
X≥5D (2)
Y≥5D (3)
In addition, in the case where being applied to the larger FOG connections of connection area, depositing for the conducting particles in film can be made
It is few in amount, in that case of, it is as follows, preferably make that X and Y value is big, be preferably set to more than 20D respectively, and preferably " X+Y "
Numerical value be also the numerical value near 100D to 400D, be finally preferably set to 400D.
X+Y=400D
X≥20D
Y≥20D
In formula (A) and formula (1)~(3), above-mentioned formula, D is the average grain diameter of conducting particles.The average grain diameter of conducting particles can
Determined using image-type or laser type particles distribution instrument.Also it can be measured by viewed in plan.In addition, side Y is relative to each
The length direction (Figure 11 references) of anisotropy conducting film is less than the straight line of ± 45 ° of scope, while X be with while the vertical straight lines of Y.
By such stipulated standard region, so as to make the shape of projection of the reference area to pressing conducting particles similar
Or it is approximate, the allowed band that conducting particles can as a result deviateed from plane lattice pattern becomes big, and economy and stably progress are each
Anisotropy is conductively connected.In other words, by the way that the minimum edge of the reference area is set into more than 5 times of conductive particle diameter, so that at this
In scope, even if the position that there is conducting particles in the range of assuming is deviateed, lacks, approached, it can also be trapped by any projection,
And exceedingly condensed in the gap not between projection, therefore, it is possible to effectively carry out anisotropic conductive connection.
In addition, the reason for minimum edge is set to more than 5 times of conductive particle diameter is, it is however generally that, in order to by each to different
At least 1 side for the projection that property is conductively connected effectively is trapped, it is necessary to be larger than the average grain diameter of conducting particles, and right
For gap between projection, from considering the reason for preventing short circuit, in addition it is also necessary to be preferably set to the average grain diameter of conducting particles
More than 2 times of size.In other words, because, when paying close attention to a circular conducting particles as benchmark, if with
The average grain diameter D of the conducting particles is the concentric of diameter plus length (i.e. 5D) obtained from 4 times of length (4D) of the particle diameter
Do not occur in circle bad outside assuming, then it is assumed that above-mentioned important document can be met.Additionally because of between projection when forming micro- spacing
Minimum range is, for example, less than 4 times of conductive particle diameter.
(cohesion of conducting particles)
In addition, in the anisotropic conductive film of the present invention, multiple conducting particles condense and configured in plane lattice pattern
Lattice point (Figure 11 B) is preferably less than 15% relative to the ratio of whole lattice points, and more preferably less than 11%, even more preferably
For less than 9%.If the ratio for condensing the lattice point of configuration is the scope, the anisotropic conductive film of the present invention is applied to each
In the case that anisotropy is conductively connected, the conducting reliability after better conduction at initial stage and aging can be realized, also can
Further suppress the generation of short circuit.Here, for the cohesion degree of the conducting particles on a lattice point, from the sight for suppressing short circuit
Point sets out, preferably few, preferably more than 2.In addition, cohesion is even if being level also typically without problem.
In addition, as the cohesion mode of conducting particles, as shown in Figure 10, Figure 11 arrow B, at least one for condensing and configuring
Partially electronically conductive particle is not contacted each other, but is tilted on the thickness direction of anisotropic conductive film and deviateed and configure.This
In " tilt deviate " mean, separated in section view on tilted direction.Do not hinder what is squeezed into during connection thereby, it is possible to realize
State.Further, as shown in figure 11, can be with the case of overlooking the conducting particles for tilting in a thickness direction and deviateing and configuring
See that conducting particles is a part of overlapping each other.Even if occurring resin flowing thereby, it is possible to realize during connection, it can also be led by any
Charged particle carries out anisotropic conductive connection.
In addition, distance (cohesion distance) is preferably conducting particles between the conducting particles for deviateing in a thickness direction and configuring
Average grain diameter 25~50%, more preferably 30~45%.If the scope, then following effect can be realized:Even if during connection
Encounter terminal ends, also easily avoid the contact of the conducting particles with being present between terminal.So, do not sent out by finding out in connection
Dysgenic condition is waved, so as to reduce the restriction that manufacturing condition is brought, performance and productivity ratio is had concurrently.
In addition, in the fourth way, missing and the total of cohesion are preferably less than 25%.
(configuration of conducting particles)
Conducting particles is preferably continuously configured on the direction vertical with the length direction of film with more than 11, more preferably with
More than 13 continuously configure.Because, may be right if omission occurs on the length direction of projection in conducting particles
Anisotropic conductive connection causes obstacle.In this case, it is preferred that having length direction of 3 row along film and continuous conducting particles is complete
Portion meets conditions above, more preferably has 5 row all to meet conditions above.Thereby, it is possible to make the conductive particle subnumber trapped by projection
More than certain, the anisotropic conductive connection that can be stablized.If in row alongst, with length direction
Conducting particles repeats more than 5 on orthogonal direction, then meets above-mentioned condition.
In the case that conducting particles condenses, around 2 conducting particles condensed, 2 conducting particles for having linked
Group be preferably less than 3 groups, more preferably less than 2 groups, be even more preferably less than 1 group.Because, if 2 cohesions
Conducting particles it is intensive exist, then can turn into the factor for occurring short circuit.
In addition, the omission on conducting particles, preferably on the length direction of film more than 4 it is continuous vacant and with film
The vertical direction of length direction on more than 4 it is continuous vacant non-intersect, more preferably any more than 4 continuous omissions every
More than one non-conterminous as conducting particles of lattice point, even more preferably any more than 4 continuous omissions across
Two or more turns into the conducting particles of lattice point and non-conterminous.On such vacant intersecting, for the omission in a direction, together
When intersecting also had no problem up to 3 row.Because, if it is vacant do not occur it is continuous on this degree, can be attached by its
Near conducting particles and trapped by projection.
In addition, it is usually undesirable nearby to there are multiple so continuous vacant intersecting regions, but if across with
The arrangement of conducting particles more than vacant region same number, the then stability that anisotropic conductive is connected has no problem.Can
It is adjacent with the continuous omission region intersected and in the presence of 2 conducting particles for having condensed.
(particle area ratio/occupancy ratio)
Further, on the reference area relative to anisotropic conductive film it is area, be present in it is complete in the area
The particle area ratio/occupancy ratio of portion's conducting particles, when in larger distance between size of lug, projection as FOG connections, leads to
Normal more than 0.15%, preferably more than 0.35%, more preferably 1.4% above is effective.The upper limit of the situation be preferably 35% with
Under, more preferably less than 32%.In addition, in the case of distance is less between size of lug, projection (such as COG connections), being preferably
Less than 35%, more preferably less than 32%, more preferably less than 25%, particularly preferably 18~23%.If the model
Enclose, then in the case of the anisotropic conductive film of the present invention being applied into anisotropic conductive connection, can realize better
Initial stage conduction and aging after conducting reliability, also can further suppress short circuit generation.Here, particle area ratio/occupancy ratio
It is the ratio of the area occupied relative to whole conducting particles area S, being present in the reference area of reference area.
For the area that whole conducting particles are occupied, when the average grain diameter of conducting particles is set into R, the number by conducting particles
When being set to n, by (R/2)2× π × n is represented.Therefore, it is represented by particle area ratio/occupancy ratio (%)=[{ (R/2)2×π×n}/S]
×100。
Be explained, when the average grain diameter of conducting particles be 2 μm, individual number density be 500/mm2(0.0005/μ
m2) and when X=Y=200D, X+Y=400D, the particle area ratio/occupancy ratio after calculating is 0.157%.When being averaged for conducting particles
Particle diameter is 3 μm, individual number density is 500/mm2(0.0005/μm2) and when X=Y=200D, X+Y=400D, after calculating
Particle area ratio/occupancy ratio is 0.35325%.When the average grain diameter of conducting particles be 3 μm, individual number density be 2000/mm2
(0.002/μm2) and when X=Y=200D, X+Y=400D, the particle area ratio/occupancy ratio after calculating is 1.413%.In addition,
When the average grain diameter of conducting particles be 30 μm, individual number density be 500/mm2(0.0005/μm2) and X=Y=200D, X+Y
During=400D, the particle area ratio/occupancy ratio after calculating is 35.325%.
(conducting particles)
As conducting particles, the conducting particles used in known anisotropic conductive film can be suitably selected to use.
For example, the metallics such as nickel, copper, silver, gold, palladium can be enumerated, with resin particles such as the coating metal such as nickel polyamide, poly- benzoguanamines
The coating metal resin particle on surface etc..In addition, from the viewpoint of operability during manufacture, conducting particles is averaged
Particle diameter is preferably 1~30 μm, more preferably 1~10 μm, more preferably 2~6 μm.Average grain diameter is as described above using figure
Determined as type or laser type particles distribution instrument.
The amount of conducting particles in anisotropic conductive film depends on the grid spacing of plane lattice pattern and led
The average grain diameter of charged particle, usually 300~40000/mm2。
(distance between neighboring lattice points)
In addition, distance is preferably greater than and led between neighboring lattice points in the plane lattice pattern assumed in anisotropic conductive film
0.5 times of the average grain diameter of charged particle, more preferably more preferably more than 1 times, 1~20 times.If the scope, then will
In the case that the anisotropic conductive film of the present invention is applied to anisotropic conductive connection, better conducting at initial stage can be realized
Property and aging after conducting reliability, also can further suppress short circuit generation.
(insulating properties adhesive substratum)
As insulating properties adhesive substratum 11, it can suitably select to can be used as insulating properties bonding in known anisotropic conductive film
The material of basic unit is used.For example, the optical free radical comprising acrylate compounds and optical free radical polymerization initiator can be used
Polymerizable resin layer, the hot radical polymerizable resin layer comprising acrylate compounds and hot radical polymerization initiator, bag
Hot cationically polymerizable resin bed containing epoxide and hot cationic polymerization, comprising epoxide and heat it is cloudy from
Hot anionic polymerisation resin bed of sub- polymerization initiator etc. or their curing resin layer.In addition, in these resin beds, can
Optionally suitably select and contain silane coupler, pigment, antioxidant, ultra-violet absorber etc..
In addition, insulating properties adhesive substratum 11 can be by utilizing rubbing method by the coating composition comprising resin as described above
Film forming and drying are further solidified to form, or are formed beforehand through known method membranization.
The thickness of such insulating properties adhesive substratum 11 is preferably 1~30 μm, more preferably 2~15 μm.
(insulating properties bonding coating)
Coating 12 is bonded as insulating properties, can suitably select to can be used as insulating properties in known anisotropic conductive film to glue
The material of coating is connect to use.In addition, it is possible to use by with the previously described identical material shape of insulating properties adhesive substratum 11
Into layer.
In addition, insulating properties bonding coating 12 can be by utilizing coating by the coating composition comprising resin as described above
Method film forming and drying are further solidified to form, or are formed beforehand through known method membranization.
The thickness of such insulating properties bonding coating 12 is preferably 1~30 μm, more preferably 2~15 μm.
Further, in insulating properties adhesive substratum 11, insulating properties bonding coating 12, silica can optionally be added micro-
The insulating properties filler such as grain, aluminum oxide, aluminium hydroxide.Relative to resin 100 mass parts for constituting these layers, insulating properties filler is matched somebody with somebody
Resultant is preferably set to 3~40 mass parts.Thus, when carrying out anisotropic conductive connection, even if insulating adhesive layer 10 is melted,
Conducting particles 2 can be suppressed unnecessary movement occurs because of the resin of melting.
(insulating properties adhesive substratum and insulating properties are bonded stacking, the embedment of conducting particles of coating)
In addition, in the case of clipping conducting particles 13 and being laminated insulating properties adhesive substratum 11 and insulative capping layer 12,
It can be carried out using known method.In this case, conducting particles 13 is present in the near interface of these layers.Here, " it is present in
Near interface " is to represent, a part for conducting particles is embedded in the layer of a side, and remainder is embedded in the layer of the opposing party.
In addition, also conducting particles can be embedded in insulating properties adhesive substratum.Also can shape in this case, not being laminated insulating properties bonding coating
Into.
<The manufacture of the anisotropic conductive film of fourth way>
Next, to being laminated with insulating properties adhesive substratum and insulating properties bonding coating and being led in their near interface
Charged particle is configured in the system of the anisotropic conductive film of the 4th aspect of the present invention of the structure of the lattice point of plane lattice pattern
The method of making is illustrated.The manufacture method has following process (I)~(V).While referring to the drawings one side to each operation specifically
It is bright.In addition, being not limited to the manufacture method.
(process (I))
First, as illustrated in fig. 12, transfer article 100 is prepared, transfer article 100 is formed with equivalent to square lattice graph on surface
The cylindrical projection 101 of the lattice point of case.Here, column refers to cylindric or prism-shaped (triangular prism, quadrangular, six prisms etc.).Should
Column includes cone.It is preferably cylindric.The height of convex portion 101 can be between the terminal according to anisotropic conductive connection to be carried out
Determined away from, average grain diameter of termination width, gap width, conducting particles etc., but conducting particles used in being preferably is flat
2 times of equal particle diameter are less than 4 times.In addition, the half breadth (width of a half height) of convex portion 101 is preferably conductive particle
Less than more than 0.7 times 1.3 times of the average grain diameter of son.If this is these scopes highly with width, it can obtain and avoid continuously
Fall off and lack such effect.
Further, convex portion 101 has the flat top surface for that degree that conducting particles can be made stably to adhere to.
* the concrete example of transfer article
The transfer article that should prepare in the process (I) can be made using known method, for example, can be by processing metal
Plate and former disk is made, hardening resin composition is coated with to it and solidification is so as to making.Specifically, flat metallic plate is cut
Processing is cut, the former disk of transfer article for being formed with recess corresponding with convex portion is made, constitutes and turns in the recess formation face coating of the former disk
The resin combination of body is printed, after solidification, is pulled open from former disk, so as to obtain transfer article.
(process (II))
Then, as shown in Figure 12 B, the transfer article 100 of multiple convex portions 101 will be formed with surface with plane lattice pattern
Micro- adhesion coating 102 is made at least top surface of convex portion 101.
* micro- adhesion coating of transfer article
Micro- adhesion coating 102 is until the insulating properties adhesive substratum that conducting particles is turned to be attached to composition anisotropic conductive film is
Only, display can temporarily keep the layer of the adhesion strength of conducting particles, be formed at least top surface of convex portion 101.Therefore, convex portion 101 is whole
Body can have micro- adherence.The thickness of micro- adhesion coating 102 can be according to material, particle diameter of conducting particles of micro- adhesion coating 102 etc.
It is appropriate to determine.In addition, " micro- adhesion " is meant, when conducting particles is turned to invest insulating properties adhesive substratum, than insulating properties bonding
The adhesion strength of basic unit is weak.
Such micro- adhesion coating 102 can be using micro- adhesion coating used in known anisotropic conductive film.For example, can
By by silicon-type adhesion agent composition or coating phase same material Nian Jie with insulating properties adhesive substratum, insulating properties adhesion
Layer is coated on the top surface of convex portion 101 and formed.
(process (III))
Then, as indicated in fig. 12 c, conducting particles 103 is made to be attached to micro- adhesion coating 102 of the convex portion 101 of transfer article 100.
Specifically, the top from the convex portion 101 of transfer article 100 spreads conducting particles 103, and will be not attached to micro- adhesion coating 102
Conducting particles 103 blown away using hair-dryer.In this case, on a part of convex portion 101, the frequency of meeting to some degree
Occur conducting particles and be attached to the side of convex portion 101 because electrostatic etc. is acted on, and can not be removed by drying.
In addition, the direction in the face in Figure 12 C can also reversed, the top surface of projection is attached to one side and be paved with conducting particles
Face.This is for stress not unnecessary to conducting particles application.By so only making necessary conducting particles during configuration attached
In projection top surface, so that easily by conducting particles recycling, with conducting particles is filled in into opening portion and the side taken out
Method is compared, and economy is also more excellent.In addition, in the case that conducting particles is filled in into the method for opening portion and taking-up, worry is not
The conducting particles being filled is easily by unnecessary stress.
(process (IV))
Then, as indicated in fig. 12d, the surface in the side for being attached with conducting particles 103 of transfer article 100 is overlapping and presses
The insulating properties adhesive substratum 104 of anisotropic conductive film should be constituted, so that 103 turns of conducting particles invests insulating properties bonding base
The one side (Figure 12 E) of layer 104.In this case, it is preferred that transfer article 100 is Nian Jie with insulating properties in the downward mode in its convex portion 101
Basic unit 104 is overlapping and presses.Because, by being set to downward and drying, it easily will not be attached at the conduction of the top surface of convex portion
Particle is removed.
(process (V))
As shown in Figure 12 F, for turning the insulating properties adhesive substratum 104 with conducting particles 103, attached face is turned from conducting particles
Side stacking insulating properties bonding coating 105.Thus the anisotropic conductive film 200 of the present invention can be obtained.
It is explained, in the anisotropic conductive film 200, on being attached to convex portion 101 always in process (III)
In the case of there is conducting particles 103 on the conducting particles of side, micro- adhesion coating 102 of the convex portion 100, conducting particles it is each to
Condensed on the thickness direction of anisotropic conductive film 200.In addition, conducting particles 103 is not present on micro- adhesion coating 102 of the convex portion 100
In the case of, be configured with from lattice point in the horizontal direction with the conducting particles deviateed on thickness direction.
<Connection structural bodies>
On the anisotropic conductive film of first, second, third or the fourth way of the present invention, by being configured at the first electricity
The terminal (such as projection) of subassembly (such as IC chip) and the terminal of the second electronic unit (such as wiring substrate) are (such as convex
Block, pad) between, and be thermally compressed from the first or second electronic component side, make its formal solidification and carry out anisotropy and lead
Electrical connection, so as to obtain short circuit, repressed poor flow, so-called COG (chip on glass (flip glass)), FOG
Connection structural bodies such as (film on glass (films on glass)).
Embodiment
Hereinafter, the anisotropic conductive film to the 1st aspect of the present invention is specifically described.
Embodiment 1A
Prepare thickness 2mm nickel plate, columned recess (5 μm of internal diameter, 6 μm of depth) is formed with cubic grid pattern, make
Into the former disk of transfer article.Adjacent recesses distance between centers is 8 μm.Therefore, the density of recess is 16000/mm2。
For the former disk of transfer article of gained, phenoxy resin (aurification (strain) is lived by YP-50, Nippon Steel) 60 mass will be contained
Part, acrylate (M208, East Asia synthesis (strain)) 29 mass parts, Photoepolymerizationinitiater initiater (IRGCUR 184, BASF Japan
(strain)) the optical polymerism resin compositions of 2 mass parts is coated on PET (poly terephthalic acids by dry thickness in the way of 30 μm
Glycol ester) on film, after 80 DEG C are dried 5 minutes, light irradiation is carried out with 1000mJ using high-pressure mercury-vapor lamp, so that transfer is made
Body.
Transfer article is practised usury down from original, is wound in by convex portion in the way of outside on the diameter 20cm roller of stainless steel,
Make roller rotation while with making containing epoxy resin (jER828, Mitsubishi Chemical's (strain)) 70 mass parts and phenoxy resin (YP-
50, aurification (strain) is lived by Nippon Steel) micro- adhesion agent compositions of 30 mass parts is impregnated in the adhesive sheet contact of non-woven fabrics, makes
Micro- adhesion agent composition is attached to the top surface of convex portion, forms micro- adhesion coating of 1 μm of thickness and obtains transfer article.
4 μm of conducting particles (nickel plated resin particle (AUL704, ponding chemical industry (strain))) of average grain diameter is interspersed among
Behind the surface of the transfer article, the conducting particles for being not attached to micro- adhesion coating is removed by blowing.
Transfer article on being attached to conducting particles, makes its conducting particles attachment surface for as insulating properties adhesive substratum
The heat curing-type insulating properties adhesive film for the sheet that 5 μm of thickness is (by containing phenoxy resin (aurification (strain) is lived by YP-50, Nippon Steel) 60
Mass parts, epoxy resin (jER828, Mitsubishi Chemical's (strain)) 40 mass parts, cation system curing agent (SI-60L, three new chemical works
Industry (strain)) insulating properties of 2 mass parts and silicon dioxide microparticle (Aerosil RY200, Japanese Aerosil (strain)) 20 mass parts glues
Connect the film of composition formation) pressed with temperature 50 C, pressure 0.5MPa, so that conducting particles is needed on insulating properties bonding
Basic unit.
Using it is transparent as insulating properties be bonded coating 15 μm of thickness sheet another insulating properties adhesive film (by containing
Phenoxy resin (aurification (strain) is lived by YP-50, Nippon Steel) 60 mass parts, epoxy resin (jER828, Mitsubishi Chemical's (strain)) 40 matter
Measure the insulating properties adhesive composition formation of part and cation system curing agent (SI-60L, three new chemical industry (strain)) 2 mass parts
Film) it is overlapping with the attached face of conducting particles turn of the insulating properties adhesive substratum of gained, it is laminated with temperature 60 C, pressure 2MPa.By
This obtains anisotropic conductive film.
Embodiment 2A
The dispersion volume of conducting particles and blowing number of times are set to 2 times during embodiment 1A, in addition, repeat to implement
Example 1A and obtain anisotropic conductive film.
Embodiment 3A
The recess inner diameter of the former disk of transfer article is set to 3.6 μm, adjacent recesses distance between centers is set to 6 μm, recess is close
Degree is set to 28000/mm2, and use the conducting particles (AUL703, ponding chemical industry (strain)) of 3 μm of average grain diameter) replace
The conducting particles that 4 μm of average grain diameter, in addition, repeats embodiment 1A and obtains anisotropic conductive film.
Embodiment 4A
The dispersion volume of conducting particles and blowing number of times are set to 2 times during embodiment 3A, in addition, repeat to implement
Example 3A and obtain anisotropic conductive film.
Comparative example 1A
The recess depths of the former disk of transfer article are set to 4.4 μm, recess inner diameter 4.8 μm are set to, by between adjacent recesses center
Distance is set to 5.6 μm, and recess density is set into 32000/mm2, in addition, repeat embodiment 1A and obtain anisotropy and lead
Electrolemma.
Comparative example 2A
The recess depths of the former disk of transfer article are set to 3.3 μm, recess inner diameter 3.6 μm are set to, by between adjacent recesses center
Distance is set to 4.2 μm, and recess density is set into 57000/mm2, and using 3 μm of average grain diameter conducting particles (AUL703,
Ponding chemical industry (strain)) instead of the conducting particles of 4 μm of average grain diameter, in addition, repeat embodiment 1A and obtain each to different
Property conducting film.
<Evaluate>
(" missing " and " cohesion " of conducting particles)
For embodiment 1A~4A and comparative example 1A~2A anisotropic conductive film, covered from its transparent insulating properties bonding
The region of 1cm square, the plane lattice that inquiry agency assumes are observed using light microscope (MX50, Olympus (strain)) in cap rock side
The lattice point of unattached conducting particles has more than 2 conductive particles relative to the ratio (missing [%]) of whole lattice points and cohesion in pattern
Ratio of the lattice point relative to whole lattice points of son.The result of gained is shown in Table 1.
In addition, determining the mutual ultimate range of conducting particles (cohesion distance) of cohesion, also it is shown in Table 1 in the lump.Give
Illustrate, " cohesion " direction is the horizontal direction of anisotropic conductive film.
(particle area ratio/occupancy ratio)
After " missing " and " cohesion " that considers conducting particles, from the recess of the former disk of the average grain diameter and transfer article of conducting particles
Density (the convex portion density of=transfer article) calculates particle area ratio/occupancy ratio.The result of gained is shown in Table 1.
(conducting resistance at initial stage)
Using embodiment and the anisotropic conductive film of comparative example, will be 12 μm with the gap between projection, 15 μm of height,
The glass substrate of the IC chip of 30 × 50 μm of golden projection and the distribution provided with 12 μm of gaps is with as 180 DEG C, 60MPa, 5 seconds
Condition carries out anisotropic conductive connection, obtains connection structural bodies.On the connection structural bodies of gained, resistance measurer is used
(digital multimeter 7565, Yokogawa are electrically (strain)) determines conduction resistance value at initial stage.The result of gained is shown in Table 1.It is desired for
0.5 below Ω.
(conducting reliability)
Connection structural bodies used in the measure of conduction resistance value at initial stage is put into being set as 85 DEG C of temperature, humidity
In 85% ageing tester, the conduction resistance value after placing 500 hours is determined in the same manner as conducting resistance with initial stage.By gained
As a result it is shown in Table 1.It is desired for 5 below Ω.
(short-circuit incidence)
The connection structural bodies identical connection structural bodies used in the measure with conduction resistance value at initial stage is made, phase is investigated
Whether the short circuit of adjacent wiring closet occurs.The result of gained is shown in Table 1.It is below 50ppm to expect short-circuit incidence.
[table 1]
As can be known from the results of Table 1, the embodiment 1A~4A connection structural bodies of anisotropic conductive film has been used in the early stage
Good result is shown in conducting resistance, conducting reliability, each assessment item of short-circuit incidence.
On the other hand, in the case of comparative example 1A, 2A anisotropic conductive film, although the ratio of " missing " of conducting particles
Example is few, but the ratio of " cohesion " is too high, therefore short circuit incidence is thought poorly of.
Embodiment 5A
In order that being 500/mm with recess density2The former disk of transfer, adjust adjacent recesses distance between centers, except this with
Outside, transfer article is made in the same manner as embodiment 2A, and then makes anisotropic conductive film.Anisotropic conductive on gained
Film, determines " missing " and " cohesion " of conducting particles in the same manner as embodiment 2A, and then calculates particle area ratio/occupancy ratio.It is tied
Really, " missing " and " cohesion " of conducting particles and embodiment 2A are equal.In addition, particle area ratio/occupancy ratio is 0.6%.
In addition, the anisotropic conductive film of gained is clamped in into glass substrate (ITO solid state electrodes) and flexible wiring substrate
(bump width:200 μm, L (line-spacing)/S (gap)=1,10 μm of distribution height) between, to connect projection length as 1mm side
Formula carries out anisotropic conductive connection under the conditions of as 180 DEG C, 80MPa, 5 seconds, obtains evaluation connection structural bodies.On
" conduction resistance value at initial stage " of the connection structural bodies of gained and to put into 85 DEG C of temperature and humidity 85%RH thermostat 500 small
When after " conducting reliability ", using digital multimeter (34401A, Agilent Technologies Co., Ltd.'s system) with electric current 1A and
Conducting resistance is determined using 4 terminal methods, in the case of " conduction resistance value at initial stage ", is evaluated as during by measured value for 2 below Ω good
It is good, the connection structural bodies more than 2 Ω is evaluated as bad, is 5 below the Ω news commentaries by measured value in the case of " conducting reliability "
Valency is good, is evaluated as during by 5 more than Ω bad.As a result, embodiment 5A connection structural bodies is be evaluated as " good ".This
Outside, " short-circuit incidence " is determined in the same manner as embodiment 2A, good result is as a result obtained in the same manner as embodiment 2A.
Embodiment 6A
In order that being 2000/mm with recess density2The former disk of transfer, adjust adjacent recesses distance between centers, except this with
Outside, transfer article is made in the same manner as embodiment 2A, and then makes anisotropic conductive film.Anisotropic conductive on gained
Film, determines conducting particles " missing " and " cohesion ", and then calculate particle area ratio/occupancy ratio in the same manner as embodiment 2A.As a result,
" missing " and " cohesion " of conducting particles and embodiment 2A are equal.In addition, particle area ratio/occupancy ratio is 2.4%.
In addition, the anisotropic conductive film of gained is clamped in into glass substrate and flexible wiring base in the same manner as embodiment 5A
Anisotropic conductive connection is carried out between plate, so as to obtain evaluation connection structural bodies.On the connection structural bodies of gained, with reality
Apply a 5A and similarly evaluate " conduction resistance value at initial stage ", " conducting reliability " and " short-circuit incidence ", as a result obtain well
As a result.
In the anisotropic conductive film of the 1st aspect of the present invention, in the plane lattice pattern assumed in reference area
" lattice point for not configuring conducting particles " is set to be less than in 20%, and plane lattice pattern relative to the ratio of whole lattice points
" lattice point that multiple conducting particles condense and configured " is less than 15% relative to the ratio of whole lattice points.Therefore, by the present invention's
In the case that the anisotropic conductive film of first method is applied to anisotropic conductive connection, good conducting at initial stage can be realized
Property and aging after good conducting reliability, can also suppress short circuit generation, thus by the IC chip of thin space with
Wiring substrate carries out useful during anisotropic conductive connection.
Next, the anisotropic conductive film to the 2nd aspect of the present invention is specifically described.
Embodiment 1B
Prepare thickness 2mm nickel plate, columned recess (6 μm of internal diameter, 8 μm of depth) is formed with cubic grid pattern, make
Into the former disk of transfer article.Adjacent recesses distance between centers is 8 μm.Therefore, recess density is 16000/mm2。
For the former disk of transfer article of gained, phenoxy resin (aurification (strain) is lived by YP-50, Nippon Steel) 60 mass will be contained
Part, acrylate (M208, East Asia synthesis (strain)) 29 mass parts and Photoepolymerizationinitiater initiater (IRGACURE 184, BASF day
Originally (strain)) the optical polymerism resin composition of 2 mass parts is coated on PET (poly- terephthaldehydes by dry thickness in the way of 30 μm
Sour glycol ester) on film, after 80 DEG C are dried 5 minutes, light irradiation is carried out with 1000mJ using high-pressure mercury-vapor lamp, turned so as to be made
Print body.
Transfer article is practised usury down from original, is wound in by convex portion in the way of outside on the diameter 20cm roller of stainless steel,
Make roller rotation while with making containing epoxy resin (jER828, Mitsubishi Chemical's (strain)) 70 mass parts and phenoxy resin (YP-
50, Nippon Steel live the mass parts of aurification (strain) 30 micro- adhesion agent composition be impregnated in non-woven fabrics adhesive sheet contact, make
Micro- adhesion agent composition is attached to the top surface of convex portion, forms micro- adhesion coating of 1 μm of thickness and obtains transfer article.
4 μm of conducting particles (nickel plated resin particle (AUL704, ponding chemical industry (strain))) of average grain diameter is interspersed among
Behind the surface of the transfer article, the conducting particles for being not attached to micro- adhesion coating is removed by blowing.
Transfer article on being attached to conducting particles, makes its conducting particles attachment surface for as insulating properties adhesive substratum
The heat curing-type insulating properties adhesive film for the sheet that 5 μm of thickness is (by containing phenoxy resin (aurification (strain) is lived by YP-50, Nippon Steel) 60
Mass parts, epoxy resin (jER828, Mitsubishi Chemical's (strain)) 40 mass parts, cation system curing agent (SI-60L, three new chemical works
Industry (strain)) insulating properties of 2 mass parts and silicon dioxide microparticle (Aerosil RY200, Japanese Aerosil (strain)) 20 mass parts glues
Connect the film of composition formation) pressed with temperature 50 C, pressure 0.5MPa, so that conducting particles is needed on insulating properties bonding
Basic unit.
Using it is transparent as insulating properties be bonded coating 15 μm of thickness sheet another insulating properties adhesive film (by containing
Phenoxy resin (aurification (strain) is lived by YP-50, Nippon Steel) 60 mass parts, epoxy resin (jER828, Mitsubishi Chemical's (strain)) 40 matter
Measure the insulating properties adhesive composition formation of part and cation system curing agent (SI-60L, three new chemical industry (strain)) 2 mass parts
Film) it is overlapping with the attached face of conducting particles turn of the insulating properties adhesive substratum of gained, it is laminated with temperature 60 C, pressure 2MPa.By
This obtains anisotropic conductive film.
Embodiment 2B
The dispersion volume of conducting particles and blowing number of times are set to 2 times during embodiment 1B, in addition, repeat to implement
Example 1B and obtain anisotropic conductive film.
Embodiment 3B
The columned recess of the former disk of transfer article is set to 4.5 μm of internal diameter, 7.5 μm of depth, by adjacent recesses center spacing
From being set to 6 μm, recess density is set to 28000/mm2, and use conducting particles (AUL703, ponding of 3 μm of average grain diameter
Chemical industry (strain)) instead of the conducting particles of 4 μm of average grain diameter, in addition, repeat embodiment 1B and obtain anisotropy and lead
Electrolemma.
Embodiment 4B
The dispersion volume of conducting particles and blowing number of times are set to 2 times during embodiment 3B, in addition, repeat to implement
Example 3B and obtain anisotropic conductive film.
Comparative example 1B
The recess depths of the former disk of transfer article are set to 4.4 μm, recess inner diameter 4.8 μm are set to, by between adjacent recesses center
Distance is set to 5.6 μm, and recess density is set into 32000/mm2, in addition, repeat embodiment 1B and obtain anisotropy and lead
Electrolemma.
Comparative example 2B
The recess depths of the former disk of transfer article are set to 3.3 μm, recess inner diameter 3.3 μm are set to, by between adjacent recesses center
Distance is set to 4.2 μm, and recess density is set into 57000/mm2, and using 3 μm of average grain diameter conducting particles (AUL703,
Ponding chemical industry (strain)) instead of the conducting particles of 4 μm of average grain diameter, in addition, repeat embodiment 1B and obtain each to different
Property conducting film.
<Evaluate>
On embodiment 1B~4B and comparative example 1B~2B anisotropic conductive film, using identical method be directed to it is right
The assessment item identical assessment item that embodiment 1A anisotropic conductive film is carried out is tested, evaluated.By the knot of gained
Fruit is shown in Table 2.It is explained, " cohesion " direction of the conducting particles of cohesion is the level side of anisotropic conductive film
To.
[table 2]
As can be known from the results of Table 2, the embodiment 1B~4B connection structural bodies of anisotropic conductive film has been used in the early stage
Good result is shown in conducting resistance, conducting reliability, each assessment item of short-circuit incidence.
On the other hand, in the case of comparative example 1B, 2B anisotropic conductive film, although the ratio of " missing " of conducting particles
Example is few, but the ratio of " cohesion " is too high, therefore short-circuit incidence is significantly more than 50ppm.
Embodiment 5B
In order that being 500/mm with recess density2The former disk of transfer, adjust adjacent recesses distance between centers, except this with
Outside, transfer article is made in the same manner as embodiment 2B, and then makes anisotropic conductive film.Anisotropic conductive on gained
Film, determines " missing " and " cohesion " of conducting particles in the same manner as embodiment 2B, and then calculates particle area ratio/occupancy ratio.It is tied
Really, " missing " and " cohesion " of conducting particles and embodiment 2B are equal.In addition, particle area ratio/occupancy ratio is 0.7%.
In addition, the anisotropic conductive film of gained is clamped in into glass substrate (ITO solid state electrodes) and flexible wiring substrate
(bump width:200 μm, L (line-spacing)/S (gap)=1,10 μm of distribution height) between, to connect projection length as 1mm modes
Anisotropic conductive connection is carried out under the conditions of as 180 DEG C, 80MPa, 5 seconds, evaluation connection structural bodies is obtained.On institute
Connection structural bodies " conduction resistance value at initial stage " and put into 85 DEG C of temperature and humidity 85%RH thermostat 500 hours
" conducting reliability ", using digital multimeter (34401A, Agilent Technologies Co., Ltd.'s system) is with electric current 1A and utilizes 4
Terminal method determines conducting resistance, in the case of " conduction resistance value at initial stage ", is evaluated as during by measured value for 2 below Ω well, will
Connection structural bodies more than 2 Ω be evaluated as it is bad, in the case of " conducting reliability ", by measured value be 5 below Ω when be evaluated as
It is evaluated as when well, by 5 more than Ω bad.As a result, embodiment 5B connection structural bodies is be evaluated as " good ".In addition,
" short-circuit incidence " is determined in the same manner as embodiment 2B, good result is as a result obtained in the same manner as embodiment 2B.
Embodiment 6B
In order that being 2000/mm with recess density2The former disk of transfer, adjust adjacent recesses distance between centers, except this with
Outside, transfer article is made in the same manner as embodiment 2B, and then makes anisotropic conductive film.Anisotropic conductive on gained
Film, determines " missing " and " cohesion " of conducting particles in the same manner as embodiment 2B, and then calculates particle area ratio/occupancy ratio.It is tied
Really, " missing " and " cohesion " of conducting particles and embodiment 2B are equal.In addition, particle area ratio/occupancy ratio is 2.7%.
In addition, the anisotropic conductive film of gained is clamped in into glass substrate and flexible wiring base in the same manner as embodiment 5B
Anisotropic conductive connection is carried out between plate, so as to obtain evaluation connection structural bodies.On the connection structural bodies of gained, with reality
Apply a 5B and similarly evaluate " conduction resistance value at initial stage ", " conducting reliability " and " short-circuit incidence ", as a result obtain well
As a result.
In the anisotropic conductive film of the 2nd aspect of the present invention, the square lattice graph assumed in arbitrary reference area
" lattice point for not configuring conducting particles " is set to be less than 5%, and square lattice graph relative to the ratio of whole lattice points in case
" lattice point that multiple conducting particles condense and configured " is more than 10% and less than 15% relative to the ratio of whole lattice points in case.Cause
This, in the case that the anisotropic conductive film of the 2nd aspect of the present invention is applied into anisotropic conductive connection, can realize
Good conducting reliability after good conduction at initial stage and aging, can also suppress the generation of short circuit, thus by narrow
IC chip and wiring substrate away from change carry out useful during anisotropic conductive connection.
Next, the anisotropic conductive film to the 3rd aspect of the present invention is specifically described.
Embodiment 1C
Prepare thickness 2mm nickel plate, columned recess (6 μm of internal diameter, 7 μm of depth) is formed with cubic grid pattern, make
Into the former disk of transfer article.Adjacent recesses distance between centers is 8 μm.Therefore, recess density is 16000/mm2。
For the former disk of transfer article of gained, phenoxy resin (aurification (strain) is lived by YP-50, Nippon Steel) 60 mass will be contained
Part, acrylate (M208, East Asia synthesis (strain)) 29 mass parts, Photoepolymerizationinitiater initiater (IRGACURE 184, BASF Japan
(strain)) the optical polymerism resin compositions of 2 mass parts is coated on PET (poly terephthalic acids by dry thickness in the way of 30 μm
Glycol ester) on film, after 80 DEG C are dried 5 minutes, light irradiation is carried out with 1000mJ using high-pressure mercury-vapor lamp, so as to make transfer
Body.
Transfer article is practised usury down from original, is wound in by convex portion in the way of outside on the diameter 20cm roller of stainless steel,
Make roller rotation while with making containing epoxy resin (jER828, Mitsubishi Chemical's (strain)) 70 mass parts and phenoxy resin (YP-
50, aurification (strain) is lived by Nippon Steel) micro- adhesion agent compositions of 30 mass parts is impregnated in the adhesive sheet contact of non-woven fabrics, makes
Micro- adhesion agent composition is attached to the top surface of convex portion, forms micro- adhesion coating of 1 μm of thickness and obtains transfer article.
4 μm of conducting particles (nickel plated resin particle (AUL704, ponding chemical industry (strain))) of average grain diameter is interspersed among
Behind the surface of the transfer article, the conducting particles for being not attached to micro- adhesion coating is removed by drying.
Transfer article on being attached to conducting particles, makes its conducting particles attachment surface for as insulating properties adhesive substratum
The heat curing-type insulating properties adhesive film for the sheet that 5 μm of thickness is (by containing phenoxy resin (aurification (strain) is lived by YP-50, Nippon Steel) 60
Mass parts, epoxy resin (jER828, Mitsubishi Chemical's (strain)) 40 mass parts, cation system curing agent (SI-60L, three new chemical works
Industry (strain)) insulating properties of 2 mass parts and silicon dioxide microparticle (Aerosil RY200, Japanese Aerosil (strain)) 20 mass parts glues
Connect the film of composition formation) pressed with temperature 50 C, pressure 0.5MPa, so that conducting particles is needed on insulating properties bonding
Basic unit.
Using it is transparent as insulating properties be bonded coating 15 μm of thickness sheet another insulating properties adhesive film (by containing
Phenoxy resin (aurification (strain) is lived by YP-50, Nippon Steel) 60 mass parts, epoxy resin (jER828, Mitsubishi Chemical's (strain)) 40 matter
Measure the insulating properties adhesive composition formation of part and cation system curing agent (SI-60L, three new chemical industry (strain)) 2 mass parts
Film) it is overlapping with the attached face of conducting particles turn of the insulating properties adhesive substratum of gained, it is laminated with temperature 60 C, pressure 2MPa.By
This obtains anisotropic conductive film.
Embodiment 2C
The dispersion volume of conducting particles and blowing number of times are set to 2 times during embodiment 1C, in addition, repeat to implement
Example 1 and obtain anisotropic conductive film.
Embodiment 3C
The columned recess inner diameter of the former disk of transfer article is set to 4.5 μm, adjacent recesses distance between centers is set to 6 μm,
Recess density is set to 28000/mm2, and use conducting particles (AUL703, ponding chemical industry of 3 μm of average grain diameter
(strain)) instead of the conducting particles of 4 μm of average grain diameter, in addition, repeat embodiment 1C and obtain anisotropic conductive film.
Embodiment 4C
Conducting particles and dispersion volume and blowing number of times are set to 2 times during embodiment 3C, in addition, repeat to implement
Example 3C and obtain anisotropic conductive film.
Comparative example 1C
The recess depths of the former disk of transfer article are set to 4.4 μm, recess inner diameter 4.8 μm are set to, by between adjacent recesses center
Distance is set to 5.6 μm, and recess density is set into 32000/mm2, in addition, repeat embodiment 1C and obtain anisotropy and lead
Electrolemma.
Comparative example 2C
The recess depths of the former disk of transfer article are set to 3.3 μm, recess inner diameter 3.6 μm are set to, by between adjacent recesses center
Distance is set to 4.2 μm, and recess density is set into 57000/mm2, and using 3 μm of average grain diameter conducting particles (AUL703,
Ponding chemical industry (strain)) instead of the conducting particles of 4 μm of average grain diameter, in addition, repeat embodiment 1C and obtain each to different
Property conducting film.
<Evaluate>
On embodiment 1C~4C and comparative example 1C~2C anisotropic conductive film, using identical method be directed to it is right
The assessment item identical assessment item that embodiment 1A anisotropic conductive film is carried out is tested, evaluated.By the knot of gained
Fruit is shown in Table 3.It is explained, " cohesion " direction of the conducting particles of cohesion is the level side of anisotropic conductive film
To.
[table 3]
As can be known from the results of Table 3, the embodiment 1C~4C connection structural bodies of anisotropic conductive film has been used in the early stage
Good result is shown in conducting resistance, conducting reliability, each assessment item of short-circuit incidence.
On the other hand, in the case of comparative example 1C, 2C anisotropic conductive film, although the ratio of " missing " of conducting particles
Example is few, but the ratio of " cohesion " is too high, therefore short circuit incidence is thought poorly of.
Embodiment 5C
In order that being 500/mm with recess density2The former disk of transfer, adjust adjacent recesses distance between centers, except this with
Outside, transfer article is made in the same manner as embodiment 2C, and then makes anisotropic conductive film.Anisotropic conductive on gained
Film, determines " missing " and " cohesion " of conducting particles in the same manner as embodiment 2C, and then calculates particle area ratio/occupancy ratio.It is tied
Really, " missing " and " cohesion " of conducting particles and embodiment 2C are equal.In addition, particle area ratio/occupancy ratio is 0.6%.
In addition, the anisotropic conductive film of gained is clamped in into glass substrate (ITO solid state electrodes) and flexible wiring substrate
(bump width:200 μm, L (line-spacing)/S (gap)=1,10 μm of distribution height) between, to connect projection length as 1mm side
Formula carries out anisotropic conductive connection under the conditions of as 180 DEG C, 80MPa, 5 seconds, obtains evaluation connection structural bodies.On
" conduction resistance value at initial stage " of the connection structural bodies of gained and input to 85 DEG C of temperature and humidity 85%RH thermostat 500 hours
" conducting reliability " afterwards, using digital multimeter (34401A, Agilent Technologies Co., Ltd.'s system) with electric current 1A and profit
Conducting resistance is determined with 4 terminal methods, in the case of " conduction resistance value at initial stage ", is evaluated as during by measured value for 2 below Ω well,
Connection structural bodies more than 2 Ω is evaluated as it is bad, in the case of " conducting reliability ", by measured value be 5 below Ω when evaluate
To be good, it is evaluated as during by 5 more than Ω bad.As a result, embodiment 5C connection structural bodies is be evaluated as " good ".This
Outside, " short-circuit incidence " is determined in the same manner as embodiment 2C, good result is as a result obtained in the same manner as embodiment 2C.
Embodiment 6C
In order that being 2000/mm with recess density2The former disk of transfer, adjust adjacent recesses distance between centers, except this with
Outside, transfer article is made in the same manner as embodiment 2C, and then makes anisotropic conductive film.Anisotropic conductive on gained
Film, determines " missing " and " cohesion " of conducting particles in the same manner as embodiment 2C, and then calculates particle area ratio/occupancy ratio.It is tied
Really, " missing " and " cohesion " of conducting particles and embodiment 2C are equal.In addition, particle area ratio/occupancy ratio is 2.4%.
In addition, the anisotropic conductive film of gained is clamped in into glass substrate and flexible wiring base in the same manner as embodiment 5C
Anisotropic conductive connection is carried out between plate, so as to obtain evaluation connection structural bodies.On the connection structural bodies of gained, with reality
Apply a 5C and similarly evaluate " conduction resistance value at initial stage ", " conducting reliability " and " short-circuit incidence ", as a result obtain well
As a result.
In the anisotropic conductive film of the 3rd aspect of the present invention, in the plane lattice pattern assumed in reference area
" lattice point for not configuring conducting particles " is set to " many in less than 15%, plane lattice pattern relative to the ratio of whole lattice points
The lattice point that individual conducting particles condenses and configured " is less than 10% relative to the ratio of whole lattice points.Further, condense and configure
Conducting particles contacts with each other and condensed on the face direction of anisotropic conductive film each other.Therefore, by the 3rd aspect of the present invention
Anisotropic conductive film be applied to anisotropic conductive connection in the case of, good conduction at initial stage and aging can be realized
Good conducting reliability afterwards, can also suppress the generation of short circuit, thus by the IC chip and wiring substrate of thin space
Carry out useful during anisotropic conductive connection.
Next, the anisotropic conductive film to the 4th aspect of the present invention is specifically described.
Embodiment 1D
Prepare thickness 2mm nickel plate, columned recess (5 μm of internal diameter, 8 μm of depth) is formed with cubic grid pattern, make
Into the former disk of transfer article.Adjacent recesses distance between centers is 8 μm.Therefore, recess density is 16000/mm2。
For the former disk of transfer article of gained, phenoxy resin (aurification (strain) is lived by YP-50, Nippon Steel) 60 mass will be contained
Part, acrylate (M208, East Asia synthesis (strain)) 29 mass parts, Photoepolymerizationinitiater initiater (IRGCUR 184, BASF Japan
(strain)) the optical polymerism resin compositions of 2 mass parts is coated on PET (poly terephthalic acids by dry thickness in the way of 30 μm
Glycol ester) on film, after 80 DEG C are dried 5 minutes, light irradiation is carried out with 1000mJ using high-pressure mercury-vapor lamp, so as to make transfer
Body.
Transfer article is practised usury down from original, is wound in by convex portion in the way of outside on the diameter 20cm roller of stainless steel,
Make roller rotation while with making containing epoxy resin (jER828, Mitsubishi Chemical's (strain)) 70 mass parts) and phenoxy resin
The adhesive sheet that micro- adhesion agent composition of (aurification (strain) is lived by YP-50, Nippon Steel) 30 mass parts is impregnated in non-woven fabrics connects
Touch, micro- adhesion agent composition is attached to the top surface of convex portion, form micro- adhesion coating of 1 μm of thickness and obtain transfer article.
4 μm of conducting particles (nickel plated resin particle (AUL704, ponding chemical industry (strain))) of average grain diameter is interspersed among
Behind the surface of the transfer article, the conducting particles for being not attached to micro- adhesion coating is removed by drying.
Transfer article on being attached to conducting particles, makes its conducting particles attachment surface for as insulating properties adhesive substratum
The heat curing-type insulating properties adhesive film for the sheet that 5 μm of thickness is (by containing phenoxy resin (aurification (strain) is lived by YP-50, Nippon Steel) 60
Mass parts, epoxy resin (jER828, Mitsubishi Chemical's (strain)) 40 mass parts, cation system curing agent (SI-60L, three new chemical works
Industry (strain)) insulating properties of 2 mass parts and silicon dioxide microparticle (Aerosil RY200, Japanese Aerosil (strain)) 20 mass parts glues
Connect the film of composition formation) pressed with temperature 50 C, pressure 0.5MPa, so that conducting particles is needed on insulating properties bonding
Basic unit.
Using it is transparent as insulating properties be bonded coating 15 μm of thickness sheet another insulating properties adhesive film (by containing
Phenoxy resin (aurification (strain) is lived by YP-50, Nippon Steel) 60 mass parts, epoxy resin (jER828, Mitsubishi Chemical's (strain)) 40 matter
Measure the insulating properties adhesive composition formation of part and cation system curing agent (SI-60L, three new chemical industry (strain)) 2 mass parts
Film) it is overlapping with the attached face of conducting particles turn of the insulating properties adhesive substratum of gained, it is laminated with temperature 60 C, pressure 2MPa.By
This obtains anisotropic conductive film.
Embodiment 2D
The dispersion volume of conducting particles and number of drying back are set to 2 times during embodiment 1D, in addition, repeat to implement
Example 1D and obtain anisotropic conductive film.
Embodiment 3D
The columned recess of the former disk of transfer article is set to 3.8 μm of internal diameter, 6 μm of depth, by adjacent recesses distance between centers
6 μm are set to, recess density is set to 28000/mm2, and use conducting particles (AUL703, ponding of 3 μm of average grain diameter
Learn industrial (strain))) instead of the conducting particles of 4 μm of average grain diameter, in addition, repeat embodiment 1D and obtain anisotropic conductive
Film.
Embodiment 4D
The dispersion volume of conducting particles and blowing number of times are set to 2 times during embodiment 3, in addition, repeat to implement
Example 3 and obtain anisotropic conductive film.
Comparative example 1D
The recess depths of the former disk of transfer article are set to 4.4 μm, recess inner diameter 4.8 μm are set to, by between adjacent recesses center
Distance is set to 5.6 μm, and recess density is set into 32000/mm2, in addition, repeat embodiment 1D and obtain anisotropy and lead
Electrolemma.
Comparative example 2D
The recess depths of the former disk of transfer article are set to 3.3 μm, recess inner diameter 3.6 μm are set to, by between adjacent recesses center
Distance is set to 4.2 μm, and recess density is set into 57000/mm2, and using 3 μm of average grain diameter conducting particles (AUL703,
Ponding chemical industry (strain)) instead of the conducting particles of 4 μm of average grain diameter, in addition, repeat embodiment 1D and obtain each to different
Property conducting film.
<Evaluate>
On embodiment 1D~4D and comparative example 1D~2D anisotropic conductive film, using identical method be directed to it is right
The assessment item identical assessment item that embodiment 1A anisotropic conductive film is carried out is tested, evaluated.By the knot of gained
Fruit is shown in Table 4.It is explained, " cohesion " direction of the conducting particles of cohesion is the level side of anisotropic conductive film
To.
[table 4]
As can be known from the results of Table 4, the embodiment 1D~4D connection structural bodies of anisotropic conductive film has been used in the early stage
Good result is shown in conducting resistance, conducting reliability, each assessment item of short-circuit incidence.
On the other hand, in the case of comparative example 1D, 2D anisotropic conductive film, although the ratio of " missing " of conducting particles
Example is few, but the ratio of " cohesion " is too high, therefore short circuit incidence is thought poorly of.
Embodiment 5D
In order that being 500/mm with recess density2The former disk of transfer, adjust adjacent recesses distance between centers, except this with
Outside, transfer article is made in the same manner as embodiment 2D, and then makes anisotropic conductive film.Anisotropic conductive on gained
Film, determines " missing " and " cohesion " of conducting particles in the same manner as embodiment 2D, and then calculates particle area ratio/occupancy ratio.It is tied
Really, " missing " and " cohesion " of conducting particles and embodiment 2D are equal.In addition, particle area ratio/occupancy ratio is 0.7%.
In addition, the anisotropic conductive film of gained is clamped in into glass substrate (ITO solid state electrodes) and flexible wiring substrate
(bump width:200 μm, L (line-spacing)/S (gap)=1,10 μm of distribution height) between, to connect projection length as 1mm side
Formula carries out anisotropic conductive connection under the conditions of as 180 DEG C, 80MPa, 5 seconds, obtains evaluation connection structural bodies.On
" conduction resistance value at initial stage " of the connection structural bodies of gained and input to 85 DEG C of temperature and humidity 85%RH thermostat 500 hours
" conducting reliability " afterwards, using digital multimeter (34401A, Agilent Technologies Co., Ltd.'s system) with electric current 1A and profit
Conducting resistance is determined with 4 terminal methods, in the case of " conduction resistance value at initial stage ", is evaluated as during by measured value for 2 below Ω well,
Connection structural bodies more than 2 Ω is evaluated as it is bad, in the case of " conducting reliability ", by measured value be 5 below Ω when evaluate
To be good, it is evaluated as during by 5 more than Ω bad.As a result, embodiment 5D connection structural bodies is be evaluated as " good ".This
Outside, " short-circuit incidence " is determined in the same manner as embodiment 2D, good result is as a result obtained in the same manner as embodiment 2D.
Embodiment 6D
In order that being 2000/mm with recess density2The former disk of transfer, adjust adjacent recesses distance between centers, except this with
Outside, transfer article is made in the same manner as embodiment 2D, and then makes anisotropic conductive film.Anisotropic conductive on gained
Film, determines " missing " and " cohesion " of conducting particles in the same manner as embodiment 2D, and then calculates particle area ratio/occupancy ratio.It is tied
Really, " missing " and " cohesion " of conducting particles and embodiment 2D are equal.In addition, particle area ratio/occupancy ratio is 2.7%.
In addition, the anisotropic conductive film of gained is clamped in into glass substrate and flexible wiring base in the same manner as embodiment 5D
Anisotropic conductive connection is carried out between plate, so as to obtain evaluation connection structural bodies.On the connection structural bodies of gained, with reality
Apply a 5D and similarly evaluate " conduction resistance value at initial stage ", " conducting reliability " and " short-circuit incidence ", as a result obtain well
As a result.
In the anisotropic conductive film of the 4th aspect of the present invention, in the plane lattice pattern assumed in reference area
" lattice point for not configuring conducting particles " is set to be less than " many in 10%, plane lattice pattern relative to the ratio of whole lattice points
The lattice point that individual conducting particles condenses and configured " is set to less than 15% relative to the ratio of whole lattice points, and condenses and match somebody with somebody
At least a portion conducting particles put is tilted on the thickness direction of anisotropic conductive film each other to be deviateed and configures.Therefore, will
In the case that the anisotropic conductive film of the 4th aspect of the present invention is applied to anisotropic conductive connection, it can realize good
Initial stage conduction and aging after good conducting reliability, can also suppress the generation of short circuit, thus by thin space
IC chip and wiring substrate carry out useful during anisotropic conductive connection.
Symbol description
10th, 200 anisotropic conductive film
11st, 104 insulating properties adhesive substratum
12nd, 105 insulating properties bonding coating
13rd, 103 conducting particles
100 transfer articles
101 convex portions
102 micro- adhesion coatings
The lattice point (position for not configuring conducting particles on lattice point) that A conducting particles has been lacked
The lattice point (position that conducting particles is in contact with each other and condensed) that B conducting particles contacts with each other and condensed
The lattice point (position that conducting particles non-contactly condenses each other) that C conducting particles is separated from each other and condensed
Claims (31)
1. a kind of anisotropic conductive film, it is that conducting particles is configured in plane lattice pattern in insulating properties adhesive substratum
The anisotropic conductive film of the structure of lattice point,
The lattice point for not configuring conducting particles in the plane lattice pattern assumed in the reference area of anisotropic conductive film is relative
In whole lattice points ratio be less than 20%,
Multiple conducting particles cohesion in the plane lattice pattern and the lattice point that configures relative to whole lattice points ratio for 15% with
Under, missing and cohesion add up to less than 25%.
2. anisotropic conductive film according to claim 1, reference area is the plane central portion of anisotropic conductive film
In by meet relationship below (A), (2) and (3) while X and while the regions of general square shape that constitute of Y,
100D≤X+Y≤400D (A)
X≥5D (2)
Y≥5D (3)
Here, D is the average grain diameter of conducting particles, and side Y is the length direction relative to anisotropic conductive film less than ± 45 °
The straight line of scope, while X be with while the vertical straight lines of Y.
3. anisotropic conductive film according to claim 1 or 2, it is to be laminated with insulating properties adhesive substratum and insulating properties is viscous
Connect coating and the anisotropy of the structure of the lattice point of plane lattice pattern is configured in their near interface conducting particles
Conducting film,
The lattice point for not configuring conducting particles in the plane lattice pattern assumed in the reference area of anisotropic conductive film is relative
In whole lattice points ratio be less than 20%,
Multiple conducting particles cohesion in the plane lattice pattern and the lattice point that configures relative to whole lattice points ratio for 5% with
Under.
4. anisotropic conductive film according to claim 3, reference area is the plane central portion of anisotropic conductive film
In by meet relationship below (1)~(3) while X and while the regions of general square shape that constitute of Y,
X+Y=100D (1)
X≥5D (2)
Y≥5D (3)
Here, D is the average grain diameter of conducting particles, and side Y is the length direction relative to anisotropic conductive film less than ± 45 °
The straight line of scope, while X be with while the vertical straight lines of Y.
5. the anisotropic conductive film according to claim 3 or 4, relative to the face of the reference area of anisotropic conductive film
Product, the particle area ratio/occupancy ratio for being present in whole conducting particles in the area is 15~35%.
6. the anisotropic conductive film according to any one of claim 3~5, the average grain diameter of conducting particles is 1~10 μ
0.5 times of distance more than the average grain diameter of conducting particles between m, the neighboring lattice points of plane lattice pattern.
7. anisotropic conductive film according to claim 1 or 2, it is to be laminated with insulating properties adhesive substratum and insulating properties is viscous
Connect coating and the anisotropy of the structure of the lattice point of plane lattice pattern is configured in their near interface conducting particles
Conducting film,
The lattice point of conducting particles is not configured in the plane lattice pattern assumed in any reference area of anisotropic conductive film
Relative to whole lattice points ratio be less than 5%,
Multiple conducting particles cohesion in the plane lattice pattern and the lattice point that configures relative to the ratio of whole lattice points be more than
10% and less than 15%.
8. anisotropic conductive film according to claim 7, reference area is the plane central portion of anisotropic conductive film
In by meet relationship below (1)~(3) while X and while the regions of general square shape that constitute of Y,
X+Y=100D (1)
X≥5D (2)
Y≥5D (3)
Here, D is the average grain diameter of conducting particles, and side Y is the length direction relative to anisotropic conductive film less than ± 45 °
The straight line of scope, while X be with while the vertical straight lines of Y.
9. the anisotropic conductive film according to claim 7 or 8, relative to any reference area of anisotropic conductive film
Area, the particle area ratio/occupancy ratio for being present in whole conducting particles in the area is 15~35%.
10. the anisotropic conductive film according to any one of claim 7~9, the average grain diameter of conducting particles is 1~10
μm, 0.5 times of distance more than the average grain diameter of conducting particles between the neighboring lattice points of plane lattice pattern.
11. the anisotropic conductive film according to any one of claim 7~10, condenses the cohesion of the conducting particles of configuration
Direction is tilted relative to the in-plane of anisotropic conductive film.
12. the anisotropic conductive film according to any one of claim 7~11, is configured with the lattice of the conducting particles of cohesion
Point and with the distance between the center of circle of conducting particles inscribe of cohesion relative to conducting particles average grain diameter for 25% with
Under.
13. anisotropic conductive film according to claim 1 or 2, it is to be laminated with insulating properties adhesive substratum and insulating properties
It is bonded coating and each to different of the structure of the lattice point of plane lattice pattern is configured in their near interface conducting particles
Property conducting film,
The lattice point for not configuring conducting particles in the plane lattice pattern assumed in the reference area of anisotropic conductive film is relative
In whole lattice points ratio be less than 15%,
Multiple conducting particles cohesion in the plane lattice pattern and the lattice point that configures relative to whole lattice points ratio for 10% with
Under,
The conducting particles for condensing and configuring contacts with each other and condensed on the face direction of anisotropic conductive film each other.
14. anisotropic conductive film according to claim 13, reference area is the plane central of anisotropic conductive film
In portion by meet relationship below (1)~(3) while X and while the regions of general square shape that constitute of Y,
X+Y=100D (1)
X≥5D (2)
Y≥5D (3)
Here, D is the average grain diameter of conducting particles, and side Y is the length direction relative to anisotropic conductive film less than ± 45 °
The straight line of scope, while X be with while the vertical straight lines of Y.
15. the anisotropic conductive film according to claim 13 or 14, relative to the reference area of anisotropic conductive film
Area, the particle area ratio/occupancy ratio for being present in whole conducting particles in the area is 15~35%.
16. the anisotropic conductive film according to any one of claim 13~15, the average grain diameter of conducting particles for 1~
10 μm, distance is more than 0.5 times of the average grain diameter of conducting particles between the neighboring lattice points of plane lattice pattern.
17. anisotropic conductive film according to claim 1 or 2, it is to be laminated with insulating properties adhesive substratum and insulating properties
It is bonded coating and each to different of the structure of the lattice point of plane lattice pattern is configured in their near interface conducting particles
Property conducting film,
The lattice point for not configuring conducting particles in the plane lattice pattern assumed in the reference area of anisotropic conductive film is relative
In whole lattice points ratio be less than 10%,
Multiple conducting particles cohesion in the plane lattice pattern and the lattice point that configures relative to whole lattice points ratio for 15% with
Under,
Cohesion and configure at least a portion conducting particles each other on the thickness direction of anisotropic conductive film tilt deviate and
Configuration.
18. anisotropic conductive film according to claim 17, reference area is the plane central of anisotropic conductive film
In portion by meet relationship below (1)~(3) while X and while the regions of general square shape that constitute of Y,
X+Y=100D (1)
X≥5D (2)
Y≥5D (3)
Here, D is the average grain diameter of conducting particles, and side Y is the length direction relative to anisotropic conductive film less than ± 45 °
The straight line of scope, while X be with while the vertical straight lines of Y.
19. the anisotropic conductive film according to claim 17 or 18, the conductive particle for deviateing in a thickness direction and configuring
Distance is that cohesion distance is the 25~50% of the average grain diameter of conducting particles between son.
20. the anisotropic conductive film according to any one of claim 17~19, relative to anisotropic conductive film
The area of reference area, the particle area ratio/occupancy ratio for being present in whole conducting particles in the area is less than 25%.
21. the anisotropic conductive film according to any one of claim 17~20, the average grain diameter of conducting particles for 1~
10 μm, distance is more than 0.5 times of the average grain diameter of conducting particles between the neighboring lattice points of plane lattice pattern.
22. anisotropic conductive film according to claim 1 or 2, during reference area is the plane of anisotropic conductive film
In the portion of centre by meet relationship below while X and while the regions of general square shape that constitute of Y,
X+Y=400D
X≥20D
Y≥20D
Here, D is the average grain diameter of conducting particles, and side Y is the length direction relative to anisotropic conductive film less than ± 45 °
The straight line of scope, while X be with while the vertical straight lines of Y.
23. anisotropic conductive film according to claim 22, relative to any reference area of anisotropic conductive film
Area, the particle area ratio/occupancy ratio for being present in whole conducting particles in the area is more than 0.15%.
24. the anisotropic conductive film according to claim 22 or 23, the average grain diameter of conducting particles is 1~30 μm, is put down
Distance is more than 0.5 times of average grain diameter of conducting particles between the neighboring lattice points of face grid pattern.
25. a kind of manufacture method, it is the manufacture method of the anisotropic conductive film any one of claim 1~24,
With following process (I)~(V):
<Process (I)>
Prepare the process of transfer article, the transfer article is formed with convex equivalent to the column of the lattice point of plane lattice pattern on surface
Portion;
<Process (II)>
The process that micro- adhesion coating is made at least top surface of the convex portion of the transfer article;
<Process (III)>
The process for making conducting particles be attached to micro- adhesion coating of the convex portion of the transfer article;
<Process (IV)>
Surface in the side for being attached to conducting particles of the transfer article is overlapping and presses insulating properties adhesive substratum, so that conductive
Particle turns the process for investing insulating properties adhesive substratum;And
<Process (V)>
For turning the insulating properties adhesive substratum with conducting particles, attached face side stacking insulating properties bonding covering is turned from conducting particles
The process of layer.
26. the transfer article used in manufacture method according to claim 25, process (I) be by processing metallic plate and
Former disk is made, hardening resin composition is coated with to it and solidifies and is made.
27. the manufacture method according to claim 25 or 26, the height of the convex portion of the transfer article of process (I) is conducting particles
1.2 times of average grain diameter less than 2 times, and the half breadth of convex portion is 0.7 times of the average grain diameter of conducting particles
Below 1.3 times of the above.
28. the manufacture method according to claim 25 or 26, the height of the convex portion of the transfer article of process (I) is conducting particles
2 times of average grain diameter less than 4 times, and the width of convex portion is more than 1.4 times 3.6 of the average grain diameter of conducting particles
Below times.
29. the manufacture method according to claim 25 or 26, the height of the convex portion of the transfer article of process (I) is conducting particles
1.2 times of average grain diameter less than 2 times, and the half breadth of convex portion is 1.4 times of the average grain diameter of conducting particles
Below 3.6 times of the above.
30. the manufacture method according to claim 25 or 26, the height of the convex portion of the transfer article of process (I) is conducting particles
2 times of average grain diameter less than 4 times, and the half breadth of convex portion for 0.7 times of the average grain diameter of conducting particles with
Upper less than 1.3 times.
31. a kind of connection structural bodies, it is that the terminal of the first electronic unit and the terminal of the second electronic unit pass through claim 1
Anisotropic conductive film any one of~24 carries out anisotropic conductive and is formed by connecting.
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TWI739287B (en) | 2021-09-11 |
CN110265843B (en) | 2021-05-11 |
TWI824740B (en) | 2023-12-01 |
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TW202022895A (en) | 2020-06-16 |
TW202147348A (en) | 2021-12-16 |
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CN107078418B (en) | 2019-07-09 |
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KR102489187B1 (en) | 2023-01-17 |
TW201630258A (en) | 2016-08-16 |
US10566108B2 (en) | 2020-02-18 |
TWI686999B (en) | 2020-03-01 |
KR101956221B1 (en) | 2019-03-08 |
WO2016068168A1 (en) | 2016-05-06 |
US10832830B2 (en) | 2020-11-10 |
US20170323701A1 (en) | 2017-11-09 |
TW202307876A (en) | 2023-02-16 |
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