CN107063487A - 温度传感器、显示面板和显示装置 - Google Patents

温度传感器、显示面板和显示装置 Download PDF

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CN107063487A
CN107063487A CN201710443333.5A CN201710443333A CN107063487A CN 107063487 A CN107063487 A CN 107063487A CN 201710443333 A CN201710443333 A CN 201710443333A CN 107063487 A CN107063487 A CN 107063487A
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tft
phase inverter
msub
temperature sensor
mrow
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CN107063487B (zh
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赵利军
刘英明
王海生
郑智仁
王鹏鹏
吴俊纬
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BOE Technology Group Co Ltd
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Abstract

本发明公开了一种温度传感器、显示面板和显示装置，属于传感器领域。温度传感器包括n级反相器，n级反相器中的第k级反相器的输入端与第k‑1级反相器的输出端连接，第k级反相器的输出端与第k+1级反相器的输入端连接，第n级反相器的输出端与第1级反相器的输入端连接，其中，n为大于或等于1的奇数，k为大于1小于n的正整数；每级反相器包括串联的第一薄膜晶体管TFT和第二TFT，第二TFT处于常开状态，第一TFT的开闭状态由反相器输入的信号决定，第一TFT的有源层的迁移率大于第二TFT的有源层的迁移率。本发明提供的温度传感器可以由显示面板中的TFT组成，从而使得温度传感器可以集成于显示面板内，提高了温度传感器测量的准确性。

Description

温度传感器、显示面板和显示装置
技术领域
本发明涉及传感器领域，特别涉及一种温度传感器、显示面板和显示装置。
背景技术
随着显示技术的高速发展，显示装置的使用越来越广泛，显示装置通常包括显示面板。在实际应用中，过高或过低的温度很可能会对显示面板造成损害，影响显示质量。为了避免温度过高或过低对显示面板造成损害，通常可以设置温度传感器监控显示面板的温度，从而可以在监控到显示面板温度较高或较低时采取措施，以避免对显示面板造成损害。
在相关技术中，温度传感器通常可以设置于显示面板外并与显示面板相连。然而，这样的设置方式会导致温度传感器无法准确地监测到显示面板内部的温度，导致温度传感器测量的准确性较低。
发明内容
为了解决现有技术温度传感器测量的准确性较低的问题，本发明实施例提供了一种温度传感器、显示面板和显示装置。所述技术方案如下：
第一方面，提供了一种温度传感器，所述温度传感器包括n级反相器，所述n级反相器中的第k级反相器的输入端与第k-1级反相器的输出端连接，所述第k级反相器的输出端与第k+1级反相器的输入端连接，第n级反相器的输出端与第1级反相器的输入端连接，其中，n为大于或等于1的奇数，k为大于1小于n的正整数；
每级所述反相器包括串联的第一薄膜晶体管TFT和第二TFT，所述第二TFT处于常开状态，所述第一TFT的开闭状态由所述反相器输入的信号决定，所述第一TFT的有源层的迁移率大于所述第二TFT的有源层的迁移率。
可选的，所述第一TFT的栅极与所述反相器的输入端连接，所述第一TFT的第一极与所述第二TFT的第一极连接，所述第二TFT的栅极和所述第二TFT的第二极分别与用于输出目标电平信号的信号端口连接，所述反相器的输出端与所述第一TFT的第一极和所述第二TFT的第一极分别连接，所述目标电平信号为能够使所述第二TFT导通的电平信号。
可选的，所述第一TFT为低温多晶硅薄膜晶体管，所述第二TFT为非晶硅薄膜晶体管；
或者，所述第一TFT为氧化物薄膜晶体管，所述第二TFT为非晶硅薄膜晶体管；
或者，所述第一TFT为低温多晶硅薄膜晶体管，所述第二TFT为氧化物薄膜晶体管。
可选的，所述第一TFT为底栅结构、顶栅结构或双栅结构；
所述第二TFT为底栅结构、顶栅结构或双栅结构。
可选的，所述第一TFT和第二TFT的增益值大于1，所述增益值为
其中，AV为所述第一TFT和所述第二TFT之间的增益，μ1为所述第一TFT的有源层的迁移率，Cox1为所述第一TFT栅极绝缘层的电容，为所述第一TFT沟道的宽长比，μ2为所述第二TFT的有源层的迁移率，Cox2为所述第二TFT栅极绝缘层的电容，为所述第二TFT沟道的宽长比。
可选的，所述温度传感器还包括频率检测单元；
所述频率检测单元用于检测所述n级反相器产生的振荡波的频率。
第二方面，提供了一种显示面板，所述显示面板内设置有上述第一方面所述的温度传感器。
可选的，所述显示面板包括：衬底基板和设置在所述衬底基板上的多个TFT，所述多个TFT包括所述第一TFT和所述第二TFT。
可选的，所述第一TFT和所述第二TFT在所述衬底基板上相邻设置。
可选的，所述第k级反相器、所述第k-1级反相器和所述第k+1级反相器在所述衬底基板上相邻设置。
第三方面，提供了一种显示装置，所述显示装置包括如上述第二方面所述的显示面板。
本发明实施例提供的技术方案带来的有益效果是：
通过提供包含n级反相器，且每级反相器包括第一TFT和第二TFT的温度传感器，使得温度传感器可以由显示面板中的TFT组成，从而使得温度传感器可以集成于显示面板内，继而使得温度传感器可以准确地监测到显示面板内部的温度，提高了温度传感器测量的准确性。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明实施例提供的温度传感器的结构示意图。
图2是本发明实施例提供的反相器的结构示意图。
图3是本发明实施例提供的TFT的特性曲线的示意图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚，下面将结合附图对本发明实施方式作进一步地详细描述。
本发明实施例提供了一种温度传感器，如图1所示，该温度传感器包括n级反相器f，其中，该n级反相器f中的第k级反相器f的输入端rk与第k-1级反相器f的输出端ck-1连接，第k级反相器f的输出端ck与第k+1级反相器f的输入端rk+1连接，第n级反相器f的输出端cn与第1级反相器f的输入端r1连接，n为大于或等于1的奇数，k为大于1小于n的正整数。并且，每级反相器f包括串联的第一TFT(Thin Film Transistor，薄膜晶体管)和第二TFT，其中，第二TFT处于常开状态，第一TFT的开闭状态由反相器输入的信号决定，第一TFT的迁移率大于第二TFT的迁移率。
需要说明的是，上述“串联”指的是第一TFT的源极或漏极与第二TFT的源极连接，或者，第一TFT的源极或漏极与第二TFT的漏极连接，使得在第一TFT和第二TFT均导通的情况下，电流可以通过第一TFT和第二TFT的源极和漏极而不产生分流。
反相器是一种可以将输入信号的相位反转180度输出的电子器件，也即是，反相器输入端输入的信号和输出端输出的信号的相位差距180度，例如，当反相器输入端输入的信号为高电平信号时，输出端输出的信号为低电平信号，而当反相器输入端输入的信号为低电平信号时，输出端输出的信号为高电平信号。
本发明实施例提供的反相器由串联的第一TFT和第二TFT组成，请参考图2，图2所示为本发明实施例提供的反相器的结构示意图，其中，第一TFT101的栅极G1与反相器的输入端r连接，第一TFT101的第一极J11与第二TFT102的第一极J21连接，第二TFT102的栅极G2和第二TFT102的第二极J22分别与用于输出目标电平信号的信号端口D连接，反相器的输出端c与第一TFT101的第一极J11和第二TFT102的第一极J21分别连接，其中，目标电平信号为能够使第二TFT102导通的电平信号。
如图2所示，由于第二TFT102的栅极G2与用于输出目标电平信号的信号端口D连接，因此，第二TFT102处于常开状态，而第一TFT101的栅极G1与反相器的输入端r连接，因此，第一TFT101的开闭状态由反相器输入的信号决定。
在实际应用中，第一TFT101和第二TFT102可以均为N型TFT，也即是第一TFT101和第二TFT102均在高电平信号下导通，在低电平信号下截止，在这种情况下，上述目标电平信号可以为高电平信号。当反相器的输入端r输入低电平信号时，第一TFT101处于关闭状态，此时，与第二TFT102的第二极J22连接的信号端口D输出的目标电平信号仅用于驱动第二TFT102的第一极J21和第二极J22之间产生电流，信号端口D输出的目标电平信号经过第二TFT102的第一极J21和第二极J22后由反相器的输出端c输出，这种情况下，反相器的输出端c输出的信号为高电平信号。
当反相器的输入端r输入高电平信号时，第一TFT101处于开启状态，此时，与第二TFT102的第二极J22连接的信号端口D输出的目标电平信号不仅用于驱动第二TFT102的第一极J21和第二极J22之间产生电流，也用于驱动第一TFT101的第一极J11和第二极J12之间产生电流，在这种情况下，信号端口D输出的目标电平信号由串联的第一TFT101和第二TFT102进行分压，此时反相器的输出端c输出的信号为低电平信号。
需要说明的是，第一TFT101的第一极J11可以为第一TFT101的源极，第二极J12可以为第一TFT101的漏极，或者，第一TFT的第一极J11可以为第一TFT101的漏极，第二极J12可以为第一TFT101的源极。同理地，第二TFT102的第一极J21可以为第二TFT102的源极，第二极J22可以为第二TFT102的漏极，或者，第二TFT的第一极J21可以为第二TFT102的漏极，第二极J22可以为第二TFT101的源极，本发明实施例对此不做具体限定。
本发明实施例提供的温度传感器为由n级反相器组成的如图1所示的环形振荡结构，该环形振荡结构能够产生振荡波。下面本发明实施例将以该环形振荡结构包含3级反相器为例对该环形振荡结构产生振荡的原理进行简要说明：
在t0时刻，第一级反相器的输入端输入高电平信号，在t1时刻第一级反相器可以输出低电平信号，并将该低电平信号输入至第二级反相器的输入端，在t2时刻第二极反相器可以输出高电平信号，并将该高电平信号输入至第三级反相器的输入端，在t3时刻第三级反相器可以输出低电平信号，并将该低电平信号输入至第一级反相器的输入端，这样，在经过t3-t0的时长后，第一级反相器的输入端由高电平信号变为低电平信号，同理地，在经过相同的时长后，第一级反相器的输入端又可以由低电平信号变为高电平信号，这样，环形振荡结构即可产生振荡，其中，环形振荡结构的振荡周期即为t3-t0。需要说明的是，只有在包含的反相器的个数为奇数时，环形振荡结构才能产生振荡。
在实际应用中，随着温度的升高，TFT的电流值会发生变化，请参考图3，如图3所示为TFT的特性曲线，图3的纵轴代表TFT第一极和第二极之间的电流值，单位为安培，横轴代表TFT第一极和第二极之间的电压值，单位为伏特。由图3可知，随着TFT温度的升高，TFT的电流值会升高，当TFT的电流值升高时，反相器输入信号和输出信号之间的时延会降低，也即是上述举例中t1-t0、t2-t1、t3-t2的值减小，从而使得反相器组成的环形振荡结构的振荡周期降低，也即是上述举例中t3-t0的值减小。因此，温度传感器测得的温度值可以由环形振荡结构的振荡周期进行反映。
由上文说明可知，本发明实施例提供的温度传感器由TFT组成，而显示面板中通常包含TFT，因此，本发明实施例提供的温度传感器可以集成于显示面板内，从而使得温度传感器对显示面板温度值的测量更加准确。
在实际应用中，为了使图1所示的环形振荡结构产生振荡，反相器中包含的第一TFT101和第二TFT102之间的增益值需要大于增益阈值，可选的，该增益阈值可以为1，也即是，第一TFT101和第二TFT102之间的增益值可以大于1，第一TFT101和第二TFT102之间的增益可以由下式表示：
其中，AV为第一TFT101和第二TFT102之间的增益，μ1为第一TFT101的有源层的迁移率，Cox1为第一TFT101栅极绝缘层的电容，为第一TFT101沟道的宽长比，μ2为第二TFT102的有源层的迁移率，Cox2为第二TFT102栅极绝缘层的电容，为第二TFT102沟道的宽长比。
由上式可知，在实际应用中，可以通过保证第一TFT101沟道的宽长比与第二TFT102沟道的宽长比的比值大于某一阈值来保证环形振荡结构产生振荡，也可以通过保证第一TFT101的有源层的迁移率与第二TFT102的有源层的迁移率的比值大于某一阈值来保证环形振荡结构产生振荡，还可以通过保证第一TFT101栅极绝缘层的电容与第二TFT102栅极绝缘层的电容的比值大于某一阈值来保证环形振荡结构产生振荡。然而，在实际应用中，不同类型的TFT的栅极绝缘层的电容一般都在10-8法拉量级，差异较小，因此，难以通过保证第一TFT101栅极绝缘层的电容与第二TFT102栅极绝缘层的电容的比值大于某一阈值来保证环形振荡结构产生振荡，而保证第一TFT101沟道的宽长比与第二TFT102沟道的宽长比的比值大于某一阈值会使得第一TFT101沟道的宽长比较大，这会导致第一TFT101占用的面积较大，不利于温度传感器集成于显示面板中。因此，在本发明实施例中，可以通过保证第一TFT101的有源层的迁移率与第二TFT102的有源层的迁移率的比值大于某一阈值来保证环形振荡结构产生振荡，也即是可以通过保证第一TFT101的有源层的迁移率大于第二TFT102的有源层的迁移率来保证环形振荡结构产生振荡。
综上所述，本发明实施例通过提供包含n级反相器，且每级反相器包括第一TFT和第二TFT的温度传感器，使得温度传感器可以由显示面板中的TFT组成，从而使得温度传感器可以集成于显示面板内，继而使得温度传感器可以准确地监测到显示面板内部的温度，提高了温度传感器测量的准确性。
在实际应用中，TFT的类型通常有低温多晶硅(Low Temperature Poly-Silicon，LPTS)薄膜晶体管，非晶硅(amorphous silicon，α-Si)薄膜晶体管和氧化物(Oxide)薄膜晶体管，其中，LPTS薄膜晶体管的迁移率为100，α-Si薄膜晶体管的迁移率为0.1，Oxide薄膜晶体管的迁移率为10。为了保证第一TFT101的迁移率大于第二TFT102的迁移率，在本发明实施例中，第一TFT101可以为LPTS薄膜晶体管，第二TFT102可以为α-Si薄膜晶体管，或者，第一TFT101可以为Oxide薄膜晶体管，第二TFT102可以为α-Si薄膜晶体管，或者，第一TFT101为LPTS薄膜晶体管，第二TFT102为Oxide薄膜晶体管。
可选的，在本发明实施例中，第一TFT101可以为底栅结构、顶栅结构或双栅结构，同样地，第二TFT102也可以为底栅结构、顶栅结构或双栅结构。
可选的，在本发明实施例中，温度传感器还可以包括频率检测单元，该频率检测单元用于检测上述环形振荡结构产生的振荡波的频率，已通过该振荡波的频率确定温度传感器测得的温度值。
综上所述，本发明实施例通过提供包含n级反相器，且每级反相器包括第一TFT和第二TFT的温度传感器，使得温度传感器可以由显示面板中的TFT组成，从而使得温度传感器可以集成于显示面板内，继而使得温度传感器可以准确地监测到显示面板内部的温度，提高了温度传感器测量的准确性。
本发明实施例还提供了一种显示面板，该显示面板包括：衬底基板和设置在衬底基板上的多个TFT，其中，该多个TFT包括上文所述的第一TFT101和第二TFT102，也即是，该显示面板中集成有上文所述的温度传感器。
可选的，该第一TFT101和该第二TFT102在衬底基板上相邻设置，在实际应用中，第一TFT101和第二TFT102可以位于同一行中，并在同一行中相邻，或者，该第一TFT101和第二TFT102可以位于同一列中，并在同一列中相邻。
此外，上文所述的第k级反相器、第k-1级反相器和第k+1级反相器在衬底基板上也相邻设置。
将第一TFT101和该第二TFT102相邻设置，并将第k级反相器、第k-1级反相器和第k+1级反相器相邻设置可以减小温度传感器的制作难度。
本发明实施例还提供了一种显示装置，该显示装置包括上文所述的显示面板，该显示装置可以为：电子纸、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
以上所述仅为本发明的较佳实施例，并不用以限制本发明，凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

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1.一种温度传感器，其特征在于，所述温度传感器包括n级反相器，所述n级反相器中的第k级反相器的输入端与第k-1级反相器的输出端连接，所述第k级反相器的输出端与第k+1级反相器的输入端连接，第n级反相器的输出端与第1级反相器的输入端连接，其中，n为大于或等于1的奇数，k为大于1小于n的正整数；
每级所述反相器包括串联的第一TFT和第二TFT，所述第二TFT处于常开状态，所述第一TFT的开闭状态由所述反相器输入的信号决定，所述第一TFT的有源层的迁移率大于所述第二TFT的有源层的迁移率。
2.根据权利要求1所述的温度传感器，其特征在于，所述第一TFT的栅极与所述反相器的输入端连接，所述第一TFT的第一极与所述第二TFT的第一极连接，所述第二TFT的栅极和所述第二TFT的第二极分别与用于输出目标电平信号的信号端口连接，所述反相器的输出端与所述第一TFT的第一极和所述第二TFT的第一极分别连接，所述目标电平信号为能够使所述第二TFT导通的电平信号。
3.根据权利要求1所述的温度传感器，其特征在于，所述第一TFT为低温多晶硅薄膜晶体管，所述第二TFT为非晶硅薄膜晶体管；
或者，所述第一TFT为氧化物薄膜晶体管，所述第二TFT为非晶硅薄膜晶体管；
或者，所述第一TFT为低温多晶硅薄膜晶体管，所述第二TFT为氧化物薄膜晶体管。
4.根据权利要求1所述的温度传感器，其特征在于，所述第一TFT为底栅结构、顶栅结构或双栅结构；
所述第二TFT为底栅结构、顶栅结构或双栅结构。
5.根据权利要求1所述的温度传感器，其特征在于，所述第一TFT和第二TFT之间的增益值大于1，所述增益值为
<mrow> <msub> <mi>A</mi> <mi>v</mi> </msub> <mo>=</mo> <msqrt> <mfrac> <mrow> <msub> <mi>&amp;mu;</mi> <mn>1</mn> </msub> <msub> <mi>C</mi> <mrow> <mi>ox</mi> <mn>1</mn> </mrow> </msub> <mrow> <mo>(</mo> <mfrac> <msub> <mi>w</mi> <mn>1</mn> </msub> <msub> <mi>L</mi> <mn>1</mn> </msub> </mfrac> <mo>)</mo> </mrow> </mrow> <mrow> <msub> <mi>&amp;mu;</mi> <mn>2</mn> </msub> <msub> <mi>C</mi> <mrow> <mi>ox</mi> <mn>2</mn> </mrow> </msub> <mrow> <mo>(</mo> <mfrac> <msub> <mi>W</mi> <mn>2</mn> </msub> <msub> <mi>L</mi> <mn>2</mn> </msub> </mfrac> <mo>)</mo> </mrow> </mrow> </mfrac> </msqrt> <mo>;</mo> </mrow>
其中，AV为所述第一TFT和所述第二TFT之间的增益，μ1为所述第一TFT的有源层的迁移率，Cox1为所述第一TFT栅极绝缘层的电容，为所述第一TFT沟道的宽长比，μ2为所述第二TFT的有源层的迁移率，Cox2为所述第二TFT栅极绝缘层的电容，为所述第二TFT沟道的宽长比。
6.根据权利要求1所述的温度传感器，其特征在于，所述温度传感器还包括频率检测单元；
所述频率检测单元用于检测所述n级反相器产生的振荡波的频率。
7.一种显示面板，其特征在于，所述显示面板内设置有如权利要求1至6任一所述的温度传感器。
8.根据权利要求7所述的显示面板，其特征在于，所述显示面板包括：衬底基板和设置在所述衬底基板上的多个TFT，所述多个TFT包括所述第一TFT和所述第二TFT。
9.根据权利要求8所述的显示面板，其特征在于，所述第一TFT和所述第二TFT在所述衬底基板上相邻设置。
10.根据权利要求8所述的显示面板，其特征在于，所述第k级反相器、所述第k-1级反相器和所述第k+1级反相器在所述衬底基板上相邻设置。
11.一种显示装置，其特征在于，所述显示装置包括如权利要求7-10任一所述的显示面板。
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