CN107004704B - 用于ⅲa-n族器件的缓冲堆叠 - Google Patents

用于ⅲa-n族器件的缓冲堆叠 Download PDF

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CN107004704B
CN107004704B CN201580065604.7A CN201580065604A CN107004704B CN 107004704 B CN107004704 B CN 107004704B CN 201580065604 A CN201580065604 A CN 201580065604A CN 107004704 B CN107004704 B CN 107004704B
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Q·法里德
A·M·海尔德
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Texas Instruments Inc
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Abstract

本申请公开一种制造用于晶体管的多层外延缓冲层堆叠的方法(100)，该方法包括在衬底上沉积缓冲堆叠。第一有空隙IIIA‑N族层沉积(102)在衬底上，并且然后第一基本无空隙IIIA‑N族层沉积(103)在第一有空隙IIIA‑N族层上。第一高粗糙度IIIA‑N族层沉积(104)在第一基本无空隙IIIA‑N族层上，并且第一基本平滑IIIA‑N族层沉积(105)在第一高粗糙度IIIA‑N族层上。然后至少一个IIIA‑N族表面层沉积(106)在第一基本平滑IIIA‑N族层上。

Description

用于ⅢA-N族器件的缓冲堆叠
技术领域
本发明通常涉及IIIA-N族(例如GaN)场效应晶体管(FET)，并且更具体地涉及用于此类FET的缓冲堆叠。
背景技术
氮化镓(GaN)是常用IIIA-N族材料，其中IIIA族元素诸如镓(和硼、铝、铟和铊)有时也被称为第13族元素。GaN是具有纤锌矿晶体结构的二元IIIA/V直接带隙半导体。GaN在室温下具有3.4eV的相对宽的带隙(与之相比，硅为1.1eV)，这为其在光电子学器件、大功率电子器件器件和高频电子器件中的各种应用给予了特殊性质。
因为GaN和硅具有显著的热膨胀系数失配，所以缓冲层通常用在硅衬底和GaN层之间用于应变管理。该缓冲技术形成通常用于高电子迁移率晶体管(HEMT)(也称为异质结构FET(HFET)或调制掺杂FET(MODFET)器件)的大多数硅基氮化镓技术的基础，该高电子迁移率晶体管是场效应晶体管，其结合了作为沟道的在具有不同带隙的两种材料之间的结(即异质结)而非掺杂区域(通常为针对MOSFET的情况)。用于此类器件的一些缓冲布置使用超晶格结构或渐变缓冲结构。
发明内容
描述的示例考虑了使用超晶格结构或使用具有相关联限制的渐变缓冲的用于IIIA-N族器件的已知缓冲堆叠。由于引起低器件击穿电压的开裂，渐变缓冲结构对厚度施加限制，而超晶格结构具有高泄漏电流、弯曲/翘曲和缓慢的生长速率。
在所描述的示例中，本发明公开的缓冲堆叠有意地引入用于应变驰豫的有空隙层和无空隙层以改善缓冲堆叠的质量。另外，本发明所公开的缓冲堆叠有助于生长较厚的层，其具有减少的缺陷诸如凹坑和空隙的密度，该较厚的层可以(因此)承受更高击穿电压，诸如本发明公开的功率晶体管在泄漏电流为1μA/mm2时实现大于100V的击穿电压。
附图说明
图1是根据一个示例实施例，为了形成功率IIIA-N族晶体管器件而制造多层缓冲层堆叠并且然后在其上制造IIIA-N族表面层的示例方法中的步骤的流程图。
图2A是根据一个示例实施例的示例器件堆叠的横截面图，该示例器件堆叠包括在衬底上的具有有空隙III-N族层和在其上的无空隙III-N族层的多层缓冲堆叠，有空隙III-N族层和无空隙III-N族层均示出为A1N层，并且该示例器件堆叠还包括粗糙III-N族层和在其上的平滑III-N族层，该粗糙III-N族层和该平滑III-N族层均示出为在A1N层上的A1GaN层。
图2B是根据一个示例实施例的示例器件堆叠的横截面图，该示例器件堆叠包括在衬底上的具有交替的有空隙III-N族层和无空隙III-N族层的多层缓冲堆叠，全部有空隙III-N族层和无空隙III-N族层示出为在衬底上的A1N层，并且该示例器件堆叠还包括都被示出为A1GaN层的交替的粗糙III-N族层堆叠和平滑III-N族层堆叠。
图3A是根据一个示例实施例的具有本发明所公开的多层缓冲层堆叠的示例耗尽型高电子迁移率晶体管(HEMT)功率器件的横截面图。
图3B是根据一个示例实施例的具有本发明所公开的多层缓冲层堆叠的常闭栅极的示例增强型HEMT功率器件的横截面图。
具体实施方式
在附图中，相同附图标记用于表示相同或等同元件。一些示出的动作或事件可以按不同顺序发生和/或与其他动作或事件同时发生。另外，可以不需要一些示出的动作或事件来实现根据本公开的方法。
图1是根据一个示例实施例的为了形成功率IIIA-N族功率晶体管器件而制造多层缓冲层堆叠并且然后在其上制造IIIA-N族表面层的示例方法100中的步骤的流程图。可以通过金属有机化合物化学气相沉积(MOCVD)、分子束外延(MBE)或氢化物气相外延(HVPE)来沉积全部相应缓冲层和IIIA-N族表面层。
步骤101包括去除衬底表面上的原生(native)氧化物(如果有的话)。衬底可以包括蓝宝石、硅或碳化硅(SiC)。IIIA-N族层可以由通式AlxGayIn1-x-yN表示，其中0＜x≤1，0≤y≤1，0＜x+y≤1。例如，IIIA-N族层可以包括A1N、A1GaN、AlInN和AlInGaN中的至少一种。还可以包括其他IIIA族元素诸如硼(B)，并且N可以部分地被磷(P)、砷(As)或锑(Sb)代替。IIIA族氮化物半导体中的每一种可以含有选自Si、C、Ge、Se、O、Fe、Mn、Mg、Ca、Be、Cd和Zn中的可选掺杂剂。一个或更多个IIIA-N族层可以通过包括MBE、MOCVD或HVPE的工艺形成。
在以下描述的步骤102至步骤105中沉积的层可以在步骤中均被认为是缓冲层。步骤102包括在衬底上沉积第一有空隙IIIA-N族层，其具有大于5个空隙每平方微米的空隙密度和在0.05μm至0.2μm之间的平均空隙直径。可以通过改变温度、沉积压力和IIIA族与N族的比率或这些参数中的任意的组合来形成空隙。步骤103包括在第一基本有空隙IIIA-N族层上沉积第一基本无空隙IIIA-N族层，其具有小于5个空隙每平方微米的空隙密度和小于0.05μm的平均空隙直径。基本无空隙IIIA-N族层是标准IIIA-N族层。
步骤104包括在第一基本无空隙IIIA-N族层上沉积第一高粗糙度IIIA-N族层，其具有至少
Figure BDA0001311181490000031
的均方根(rms)粗糙度。步骤105包括在第一高粗糙度IIIA-N族层上沉积第一基本平滑IIIA-N族层，其具有小于
Figure BDA0001311181490000032
的rms粗糙度。在一个实施例中，第一高粗糙度IIIA-N族层的rms粗糙度为从
Figure BDA0001311181490000033
至
Figure BDA0001311181490000034
而第一基本平滑IIIA-N族层的rms粗糙度是在
Figure BDA0001311181490000035
和
Figure BDA0001311181490000036
之间。步骤106包括在第一基本平滑IIIA-N族层上沉积至少一个IIIA-N族表面层。在本发明所公开的缓冲层堆叠中的缓冲层通常均基本无裂纹，其具有通过缺陷分析工具(诸如科磊半导体Launches
Figure BDA0001311181490000037
8620型检查系统(KLA-Tencor Launches
Figure BDA0001311181490000038
8620 Inspection System)测量的在衬底的5mm边缘排除区域(edgeexclusion)外(beyond)的零裂纹。
在一个实施例中，步骤106包括沉积IIIA-N族三层式堆叠，其具有夹在第一GaN层和第二GaN层之间的A1GaN层，其中这两个GaN层具有不同的掺杂水平，诸如差距至少一个数量级。在一个示例中，与第二GaN层相比，第一GaN层具有较低掺杂水平。在另一种情况下，与第二GaN层相比，第一GaN层具有较高掺杂水平。在一个实施例中，第一GaN层中的掺杂剂水平在1×1015个原子/cm3至1×1017个原子/cm3之间，而第二GaN层中的掺杂剂水平范围在1×1017个原子/cm3至1×1020个原子/cm3之间。在另一个实施例中，第一GaN层中的掺杂剂水平范围在1×1016个原子/cm3和1×1017个原子/cm3之间，而第二GaN层中的掺杂剂水平范围在1×1017个原子/cm3和1×1018个原子/cm3之间，或反之亦然。
方法100通常还包括在一个或更多个IIIA-N族表面层上形成栅极电介质层(例如，SiN或SiON)，在栅极电介质层上形成金属栅电极以及在一个或更多个IIIA-N族表面层上形成源极触点和漏极触点。在一个实施例中，栅电极可以包括TiW合金。在一个实施例中，可以通过溅镀金属堆叠诸如Ti/Al/TiN来形成触点。
图2A是根据一个示例实施例的示例器件堆叠200的横截面图，该示例器件堆叠200包括具有有空隙III-N族层220a和无空隙III-N族层220b的多层缓冲堆叠220，有空隙III-N族层220a和无空隙III-N族层220b二者均示出为在衬底(例如，硅)210上的A1N层，并且该示例器件堆叠200还包括在A1N层上的粗糙III-N族层220e和平滑III-N族层220f，粗糙III-N族层220e和平滑III-N族层220f二者都被示出为A1GaN层。示出为GaN层的IIIA-N族表面层230在平滑III-N族层220f上。
图2B是示例器件堆叠250的横截面图，该示例器件堆叠250包括在衬底210上的多层缓冲堆叠220’，其具有均示出为A1N层的交替的有空隙III-N族层和无空隙III-N族层220a(有空隙)、220b(基本无空隙)、220c(有空隙)和220d(基本无空隙)，并且还包括都被示出为A1GaN层的交替的粗糙和平滑III-N族层堆叠220e(粗糙)、220f(平滑)、220g(粗糙)、220h(平滑)、220i(粗糙)和220j(平滑)。例如，已经发现较高粗糙度层220e、220g和220i改善层间粘合，而发现较低粗糙度/较平滑层220f、220h和220j填充源自下面较粗糙层的空隙。IIIA-N族表面层230’包括在多层缓冲堆叠220’的平滑A1GaN层220j上的最下面的GaN层230a上的中间A1GaN层230b上的最上面的GaN层230c。
用于图2B中的IIIA-N族表面层230’的示例厚度范围可为用于可用作HEMT层的最上面GaN层230c的
Figure BDA0001311181490000041
至
Figure BDA0001311181490000042
用于中间A1GaN层230b的
Figure BDA0001311181490000043
至
Figure BDA0001311181490000044
用于最下面GaN层230a的0.1μm至5μm。关于多层缓冲堆叠220’，示例厚度包括用于层220j的0.1μm至1.0μm，用于层220i的0.1μm至1.0μm，用于层220h的0.1μm至1.0μm，用于层220g的0.1μm至1.0μm，用于层220f的0.1μm至1.0μm，用于层220e的0.1μm至1.0μm，用于层220b和220d的0.05μm至0.5μm，以及用于层220a和220c的0.05μm至0.5μm。
本发明所公开的实施例的优点包括沉积比常规GaN膜堆叠厚(诸如约两微米)的无裂纹的能力，以获得更高晶体管器件击穿电压，较低泄漏电流和减少的衬底弯曲/翘曲。例如，本发明所公开的功率晶体管可以提供在1μA/mm2的泄露电流密度下的至少100V的击穿电压。
可使用本发明所公开的多层缓冲层实施例的功率半导体器件的示例包括HEMT、双异质结构场效应晶体管(DHFET)、异质结双极晶体管(HBT)和双极结型晶体管(BJT)。HEMT(也被称为异质结构FET(HFET)或调制掺杂FET(MODFET))是结合作为二维电子气(2DEG)沟道层的在具有不同带隙的两个半导体材料之间的结(即异质结)而非掺杂区域(作为通常为金属氧化物半导体场效应晶体管(MOSFET)的情况)的场效应晶体管。HEMT包括具有宽带隙的化合物半导体，诸如GaN和A1GaN。由于GaN和IIIA-N材料体系中的高电子饱和速度，GaNHEMT中的电子迁移率比其他通用晶体管诸如金属氧化物半导体场效应晶体管(MOSFET)的电子迁移率高。
因此，HEMT的击穿电压可以大于其它通用晶体管的击穿电压。HEMT的击穿电压可以与包括2DEG诸如GaN层的化合物半导体层的厚度成比例地增加。
图3A是根据一个示例实施例的具有本发明所公开的在衬底210上的多层缓冲堆叠220的示例耗尽型HEMT功率器件300的横截面图。HEMT功率器件300被示出具有栅极电介质层235，诸如包括氮化硅或氮氧化硅。在该实施例中，IIIA-N族表面层包括在基本无空隙层220d上的IIIA-N族三层式堆叠。该IIIA-N族三层式堆叠可以包括夹在最上面(第一)GaN层230c和在基本无空隙层220d上的最下面(第二)GaN层230a之间的A1GaN层230b。最上面GaN层230c和最下面GaN层230a通常具有在1×1015cm-3和1×1018cm-3之间的掺杂浓度。
HEMT功率器件300可为分立器件，或IC上的许多器件中的一个。更一般地，IIIA-N族层230’可以包括GaN、InN、A1N、A1GaN、AlInN、InGaN和AlInGaN中的一种或更多种。如上所述：(a)IIIA-N族层可以包括其他IIIA族元素，诸如B；和(b)N可以部分地被P、As或Sb代替，并且还可以含有可选掺杂剂。在另一个具体示例中，IIIA-N族层230’可以包括在AlxGayN层或InxAlyN层的顶部上的GaN层。在另一个具体示例中，IIIA-N族层230’(作为三层式堆叠)可以包括在A1GaN上的InA1N上的GaN。
HEMT功率器件300包括源极241、漏极242和栅电极240。栅电极240位于源极241和漏极242之间，相比于漏极242，栅电极240更靠近源极241。源极241、漏极242和栅电极240可以由金属和/或金属氮化物形成，但是示例实施例不限于此。
图3B是根据一个示例实施例的具有在衬底210上的本发明所公开多层缓冲堆叠220的常闭栅极的示例增强型HEMT功率器件350的横截面图。在该实施例中，栅电极是与IIIA-N族层230c(例如，GaN层)直接接触的p型掺杂栅电极245。
本发明所公开的实施例可以用于形成可以集成到各种组装流程中以形成各种不同器件及相关产品的半导体管芯。半导体管芯可以包括在其中的各种元件和/或在半导体管芯上的层，包括阻挡层、电介质层、器件结构、有源元件和无源元件(包括源极区域、漏极区域、位线、基极、发射极、集电极、导电线、导电通孔)等。此外，半导体管芯可以由包括双极型、绝缘栅双极型晶体管(IGBT)、CMOS、BiCMOS和MEMS的各种工艺形成。
在权利要求的范围内，在所描述的实施例中修改是可能的并且其他实施例是可能的。

Claims (17)

1.一种制造用于晶体管的外延层堆叠的方法，包括：
沉积具有缓冲层的多层缓冲堆叠，包括：
在衬底上沉积第一有空隙IIIA-N族层，其具有大于5个空隙每平方微米的空隙密度和在0.05μm至0.2μm之间的平均空隙直径；
在所述第一有空隙IIIA-N族层上沉积第一基本无空隙IIIA-N族层，其具有小于5个空隙每平方微米的空隙密度和小于0.05μm的平均空隙直径；
在所述第一基本无空隙IIIA-N族层上沉积第一高粗糙度IIIA-N族层，其具有至少
Figure FDA0002614806620000011
的均方根粗糙度，即rms粗糙度，以及
在所述第一高粗糙度IIIA-N族层上沉积第一基本平滑IIIA-N族层，其具有小于
Figure FDA0002614806620000012
的rms粗糙度，以及
在所述第一基本平滑IIIA-N族层上沉积至少一个IIIA-N族表面层。
2.根据权利要求1所述的方法，其中所述第一高粗糙度IIIA-N族层的rms粗糙度为从
Figure FDA0002614806620000013
至
Figure FDA0002614806620000014
并且其中所述第一基本平滑IIIA-N族层的rms粗糙度是在
Figure FDA0002614806620000015
和
Figure FDA0002614806620000016
之间。
3.根据权利要求1所述的方法，其中沉积所述多层缓冲堆叠还包括：
在所述第一基本无空隙IIIA-N族层上沉积第二有空隙IIIA-N族层，其具有大于5个空隙每平方微米的空隙密度和在0.05μm至0.2μm之间的平均空隙直径；
在所述第二有空隙IIIA-N族层沉积第二基本无空隙IIIA-N族层，其具有小于5个空隙每平方微米的空隙密度和小于0.05μm的平均空隙直径；
在所述第二基本无空隙IIIA-N族层上沉积第二高粗糙度IIIA-N族层，其具有至少
Figure FDA0002614806620000017
的rms粗糙度；以及
在所述第二高粗糙度IIIA-N族层上沉积第二基本平滑IIIA-N族层，其具有小于
Figure FDA0002614806620000018
的rms粗糙度。
4.根据权利要求1所述的方法，其中所述IIIA-N族表面层包括GaN或A1GaN。
5.根据权利要求1所述的方法，其中沉积所述至少一个IIIA-N族表面层包括：沉积IIIA-N族三层式堆叠，其包括夹在第一GaN层和第二GaN层之间的A1GaN层，其中所述第一GaN层和所述第二GaN层均具有在1×1015cm-3和1×1018cm-3之间的掺杂浓度。
6.根据权利要求1所述的方法，其中所述衬底包括蓝宝石、硅或碳化硅(SiC)。
7.根据权利要求1所述的方法，其中所述第一有空隙IIIA-N族层和所述第一基本无空隙IIIA-N族层包括A1N，并且所述第一高粗糙度IIIA-N族层和所述第一基本平滑IIIA-N族层均包括A1GaN。
8.根据权利要求1所述的方法，其中所述缓冲层全部基本是无裂纹的，在所述衬底的5mm边缘排除区域外具有零裂纹。
9.根据权利要求1所述的方法，还包括：
在所述IIIA-N族表面层上形成栅极电介质层；
在所述栅极电介质层上形成金属栅电极；和
在所述IIIA-N族表面层上形成源极触点和漏极触点。
10.一种功率晶体管器件，包括：
衬底；
包括所述衬底上的缓冲层的多层缓冲堆叠，其包括：第一有空隙IIIA-N族层，其具有大于5个空隙每平方微米的空隙密度和在0.05μm至0.2μm之间的平均空隙直径；在所述第一有空隙IIIA-N族层上的第一基本无空隙IIIA-N族层，其具有小于5个空隙每平方微米的空隙密度和小于0.05μm的平均空隙直径；在所述第一基本无空隙IIIA-N族层上的第一高粗糙度IIIA-N族层，其具有至少
Figure FDA0002614806620000021
的均方根粗糙度，即rms粗糙度；和在所述第一高粗糙度IIIA-N族层上的第一基本平滑IIIA-N族层，其具有小于
Figure FDA0002614806620000022
的rms粗糙度；
在所述第一基本平滑IIIA-N族层上的至少一个IIIA-N族表面层；
用于所述IIIA-N族表面层的源极触点和漏极触点；和
在所述IIIA-N族表面层上的栅极电介质上的栅电极。
11.根据权利要求10所述的功率晶体管器件，其中所述衬底包括蓝宝石、硅或碳化硅(SiC)。
12.根据权利要求10所述的功率晶体管器件，其中所述第一高粗糙度IIIA-N族层的rms粗糙度为从
Figure FDA0002614806620000031
至
Figure FDA0002614806620000032
而所述第一基本平滑IIIA-N族层的rms粗糙度是在
Figure FDA0002614806620000033
和
Figure FDA0002614806620000034
之间。
13.根据权利要求10所述的功率晶体管器件，其中所述多层缓冲堆叠还包括：
在所述第一基本无空隙IIIA-N族层上的第二有空隙IIIA-N族层，其具有大于5个空隙每平方微米的空隙密度和在0.05μm至0.2μm之间的平均空隙直径；
在所述第二有空隙IIIA-N族层上的第二基本无空隙IIIA-N族层，其具有小于5个空隙每平方微米的空隙密度和小于0.05μm的平均空隙直径；
在所述第二基本无空隙IIIA-N族层上的第二高粗糙度IIIA-N族层，其具有至少
Figure FDA0002614806620000035
的rms粗糙度；以及
在所述第二高粗糙度IIIA-N族层上的第二基本平滑IIIA-N族层，其具有小于
Figure FDA0002614806620000036
的rms粗糙度；
其中所述功率晶体管器件实现在1μA/mm2泄漏电流密度下的大于100V的击穿电压。
14.根据权利要求10所述的功率晶体管器件，其中所述IIIA-N族表面层包括GaN或A1GaN。
15.根据权利要求10所述的功率晶体管器件，其中所述至少一个IIIA-N族表面层包括沉积IIIA-N族三层式堆叠，其包含夹在第一GaN层和第二GaN层之间的A1GaN层，并且其中所述第一GaN层和所述第二GaN层均具有在1×1015cm-3和1×1018cm-3之间的掺杂浓度。
16.根据权利要求10所述的功率晶体管器件，其中所述第一有空隙IIIA-N族层和所述第一基本无空隙IIIA-N族层包括A1N，并且所述第一高粗糙度IIIA-N族层和所述第一基本平滑IIIA-N族层均包括A1GaN。
17.根据权利要求10所述的功率晶体管器件，其中所述缓冲层均为具有零裂纹的基本无裂纹的。
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US9847223B2 (en) 2017-12-19
CN107004704A (zh) 2017-08-01
EP3235004A1 (en) 2017-10-25
EP3235004A4 (en) 2018-08-29
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US9590086B2 (en) 2017-03-07
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