CN107004686B - 具有优化的效率的像素化闪烁体 - Google Patents

具有优化的效率的像素化闪烁体 Download PDF

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Publication number
CN107004686B
CN107004686B CN201580061634.0A CN201580061634A CN107004686B CN 107004686 B CN107004686 B CN 107004686B CN 201580061634 A CN201580061634 A CN 201580061634A CN 107004686 B CN107004686 B CN 107004686B
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China
Prior art keywords
sintering
pixelated scintillator
shrinking
scintillator
coefficient
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CN201580061634.0A
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English (en)
Chinese (zh)
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CN107004686A (zh
Inventor
J·W·M·雅各布斯
O·J·维默斯
J·J·范厄凯尔
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Koninklijke Philips NV
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Koninklijke Philips NV
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Conversion Of X-Rays Into Visible Images (AREA)
CN201580061634.0A 2014-11-13 2015-10-30 具有优化的效率的像素化闪烁体 Expired - Fee Related CN107004686B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP14193004 2014-11-13
EP14193004.0 2014-11-13
PCT/EP2015/075193 WO2016074945A1 (en) 2014-11-13 2015-10-30 Pixelated scintillator with optimized efficiency

Publications (2)

Publication Number Publication Date
CN107004686A CN107004686A (zh) 2017-08-01
CN107004686B true CN107004686B (zh) 2021-07-20

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CN201580061634.0A Expired - Fee Related CN107004686B (zh) 2014-11-13 2015-10-30 具有优化的效率的像素化闪烁体

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Country Link
US (1) US9989652B2 (enExample)
EP (1) EP3218932B1 (enExample)
JP (1) JP6356352B2 (enExample)
CN (1) CN107004686B (enExample)
WO (1) WO2016074945A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3495849A1 (en) * 2017-12-11 2019-06-12 Koninklijke Philips N.V. Multilayer pixelated scintillator with enlarged fill factor
EP3499272A1 (en) * 2017-12-14 2019-06-19 Koninklijke Philips N.V. Structured surface part for radiation capturing devices, method of manufacturing such a part and x-ray detector
EP3553568A1 (en) * 2018-04-12 2019-10-16 Koninklijke Philips N.V. X-ray detector with focused scintillator structure for uniform imaging
EP3620826A1 (en) 2018-09-10 2020-03-11 Koninklijke Philips N.V. Multi-piece mono-layer radiation detector

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1779867A (zh) * 2004-11-25 2006-05-31 西门子公司 制造x射线检测器闪烁器层的方法和闪烁器层
CN203838347U (zh) * 2014-04-25 2014-09-17 中国科学院宁波材料技术与工程研究所 闪烁体阵列制备模具

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US6361735B1 (en) * 1999-09-01 2002-03-26 General Electric Company Composite ceramic article and method of making
JP2001099941A (ja) * 1999-09-30 2001-04-13 Hitachi Metals Ltd 放射線遮蔽板、放射線検出器及び放射線遮蔽板の製造方法
US6921909B2 (en) * 2002-08-27 2005-07-26 Radiation Monitoring Devices, Inc. Pixellated micro-columnar films scintillator
DE10242006B4 (de) * 2002-09-11 2006-04-27 Siemens Ag Leuchtstoffplatte
DE102004043273A1 (de) 2003-09-09 2005-05-04 Ngk Spark Plug Co Verfahren zur Herstellung eines Keramiksubstrats und Keramiksubstrat
JP2005300190A (ja) * 2004-04-07 2005-10-27 Konica Minolta Holdings Inc 蛍光体皮膜とその製造方法及びそれを用いた放射線画像変換パネル
JP2009189801A (ja) * 2008-01-18 2009-08-27 Toshiba Corp 放射線検出器、ｘ線ｃｔ装置、および放射線検出器の製造方法
US20100127180A1 (en) * 2008-11-24 2010-05-27 Cmt Medical Technologies Ltd. Scintillator array and a method of constructing the same
KR101925823B1 (ko) 2011-05-26 2018-12-06 도레이 카부시키가이샤 신틸레이터 패널 및 신틸레이터 패널의 제조 방법
EP2529694B1 (de) 2011-05-31 2017-11-15 Ivoclar Vivadent AG Verfahren zur generativen Herstellung von Keramikformkörpern durch 3D-Inkjet-Drucken
CN103842848B (zh) 2011-08-30 2016-03-30 圣戈本陶瓷及塑料股份有限公司 用于深槽浅切口像素化的系统、方法和设备
JP2013115325A (ja) 2011-11-30 2013-06-10 Kyocera Corp 焼結構造体の製造方法
WO2014021415A1 (ja) 2012-08-03 2014-02-06 東レ株式会社 シンチレータパネルおよびシンチレータパネルの製造方法
US9886526B2 (en) 2012-10-11 2018-02-06 University Of Southern California 3D printing shrinkage compensation using radial and angular layer perimeter point information
WO2016006484A1 (ja) * 2014-07-08 2016-01-14 東レ株式会社 大型構造物の検査装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1779867A (zh) * 2004-11-25 2006-05-31 西门子公司 制造x射线检测器闪烁器层的方法和闪烁器层
CN203838347U (zh) * 2014-04-25 2014-09-17 中国科学院宁波材料技术与工程研究所 闪烁体阵列制备模具

Also Published As

Publication number Publication date
US9989652B2 (en) 2018-06-05
CN107004686A (zh) 2017-08-01
EP3218932A1 (en) 2017-09-20
EP3218932B1 (en) 2018-10-24
US20170322320A1 (en) 2017-11-09
JP6356352B2 (ja) 2018-07-11
JP2018500549A (ja) 2018-01-11
WO2016074945A1 (en) 2016-05-19

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Granted publication date: 20210720