JP6356352B2 - 最適化された効率を有するピクセル化されたシンチレータ - Google Patents

最適化された効率を有するピクセル化されたシンチレータ Download PDF

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Publication number
JP6356352B2
JP6356352B2 JP2017525905A JP2017525905A JP6356352B2 JP 6356352 B2 JP6356352 B2 JP 6356352B2 JP 2017525905 A JP2017525905 A JP 2017525905A JP 2017525905 A JP2017525905 A JP 2017525905A JP 6356352 B2 JP6356352 B2 JP 6356352B2
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Japan
Prior art keywords
pixelated scintillator
sintering
pixelated
scintillator
connection structure
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JP2017525905A
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Japanese (ja)
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JP2018500549A5 (enExample
JP2018500549A (ja
Inventor
ウィルヘルミュス マリア ヤコブス，ヨーハネス
ウィルヘルミュス マリア ヤコブス，ヨーハネス
ヤン ウィメルス，オンノ
ヤン ウィメルス，オンノ
ウーケル，ジャック ジュール ファン
ウーケル，ジャック ジュール ファン
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Koninklijke Philips NV
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Koninklijke Philips NV
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Conversion Of X-Rays Into Visible Images (AREA)
JP2017525905A 2014-11-13 2015-10-30 最適化された効率を有するピクセル化されたシンチレータ Expired - Fee Related JP6356352B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP14193004 2014-11-13
EP14193004.0 2014-11-13
PCT/EP2015/075193 WO2016074945A1 (en) 2014-11-13 2015-10-30 Pixelated scintillator with optimized efficiency

Publications (3)

Publication Number Publication Date
JP2018500549A JP2018500549A (ja) 2018-01-11
JP2018500549A5 JP2018500549A5 (enExample) 2018-04-05
JP6356352B2 true JP6356352B2 (ja) 2018-07-11

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JP2017525905A Expired - Fee Related JP6356352B2 (ja) 2014-11-13 2015-10-30 最適化された効率を有するピクセル化されたシンチレータ

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Country Link
US (1) US9989652B2 (enExample)
EP (1) EP3218932B1 (enExample)
JP (1) JP6356352B2 (enExample)
CN (1) CN107004686B (enExample)
WO (1) WO2016074945A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3495849A1 (en) * 2017-12-11 2019-06-12 Koninklijke Philips N.V. Multilayer pixelated scintillator with enlarged fill factor
EP3499272A1 (en) * 2017-12-14 2019-06-19 Koninklijke Philips N.V. Structured surface part for radiation capturing devices, method of manufacturing such a part and x-ray detector
EP3553568A1 (en) * 2018-04-12 2019-10-16 Koninklijke Philips N.V. X-ray detector with focused scintillator structure for uniform imaging
EP3620826A1 (en) 2018-09-10 2020-03-11 Koninklijke Philips N.V. Multi-piece mono-layer radiation detector

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* Cited by examiner, † Cited by third party
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US5598056A (en) 1995-01-31 1997-01-28 Lucent Technologies Inc. Multilayer pillar structure for improved field emission devices
US6361735B1 (en) * 1999-09-01 2002-03-26 General Electric Company Composite ceramic article and method of making
JP2001099941A (ja) * 1999-09-30 2001-04-13 Hitachi Metals Ltd 放射線遮蔽板、放射線検出器及び放射線遮蔽板の製造方法
US6921909B2 (en) * 2002-08-27 2005-07-26 Radiation Monitoring Devices, Inc. Pixellated micro-columnar films scintillator
DE10242006B4 (de) * 2002-09-11 2006-04-27 Siemens Ag Leuchtstoffplatte
DE102004043273A1 (de) 2003-09-09 2005-05-04 Ngk Spark Plug Co Verfahren zur Herstellung eines Keramiksubstrats und Keramiksubstrat
JP2005300190A (ja) * 2004-04-07 2005-10-27 Konica Minolta Holdings Inc 蛍光体皮膜とその製造方法及びそれを用いた放射線画像変換パネル
DE102004056999A1 (de) * 2004-11-25 2006-06-01 Siemens Ag Verfahren zur Herstellung einer Szintillatorschicht für einen Röntgendetektor und Szintillatorschicht
JP2009189801A (ja) * 2008-01-18 2009-08-27 Toshiba Corp 放射線検出器、ｘ線ｃｔ装置、および放射線検出器の製造方法
US20100127180A1 (en) * 2008-11-24 2010-05-27 Cmt Medical Technologies Ltd. Scintillator array and a method of constructing the same
KR101925823B1 (ko) 2011-05-26 2018-12-06 도레이 카부시키가이샤 신틸레이터 패널 및 신틸레이터 패널의 제조 방법
EP2529694B1 (de) 2011-05-31 2017-11-15 Ivoclar Vivadent AG Verfahren zur generativen Herstellung von Keramikformkörpern durch 3D-Inkjet-Drucken
CN103842848B (zh) 2011-08-30 2016-03-30 圣戈本陶瓷及塑料股份有限公司 用于深槽浅切口像素化的系统、方法和设备
JP2013115325A (ja) 2011-11-30 2013-06-10 Kyocera Corp 焼結構造体の製造方法
WO2014021415A1 (ja) 2012-08-03 2014-02-06 東レ株式会社 シンチレータパネルおよびシンチレータパネルの製造方法
US9886526B2 (en) 2012-10-11 2018-02-06 University Of Southern California 3D printing shrinkage compensation using radial and angular layer perimeter point information
CN203838347U (zh) * 2014-04-25 2014-09-17 中国科学院宁波材料技术与工程研究所 闪烁体阵列制备模具
WO2016006484A1 (ja) * 2014-07-08 2016-01-14 東レ株式会社 大型構造物の検査装置

Also Published As

Publication number Publication date
US9989652B2 (en) 2018-06-05
CN107004686A (zh) 2017-08-01
EP3218932A1 (en) 2017-09-20
CN107004686B (zh) 2021-07-20
EP3218932B1 (en) 2018-10-24
US20170322320A1 (en) 2017-11-09
JP2018500549A (ja) 2018-01-11
WO2016074945A1 (en) 2016-05-19

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