CN107001934B - NiFe磁通门装置的改进工艺 - Google Patents

NiFe磁通门装置的改进工艺 Download PDF

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Publication number
CN107001934B
CN107001934B CN201580065504.4A CN201580065504A CN107001934B CN 107001934 B CN107001934 B CN 107001934B CN 201580065504 A CN201580065504 A CN 201580065504A CN 107001934 B CN107001934 B CN 107001934B
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China
Prior art keywords
layer
magnetic core
etching
stress relief
wet
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CN201580065504.4A
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Chinese (zh)
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CN107001934A (zh
Inventor
M·M·伊萨
Y·张
M·詹森
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Texas Instruments Inc
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Texas Instruments Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/28—Acidic compositions for etching iron group metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/04—Measuring direction or magnitude of magnetic fields or magnetic flux using the flux-gate principle
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Hall/Mr Elements (AREA)
  • Weting (AREA)
CN201580065504.4A 2014-12-02 2015-12-02 NiFe磁通门装置的改进工艺 Active CN107001934B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/557,546 2014-12-02
US14/557,546 US9840781B2 (en) 2014-12-02 2014-12-02 Process for NiFe fluxgate device
PCT/US2015/063554 WO2016090063A1 (en) 2014-12-02 2015-12-02 IMPROVED PROCESS FOR NiFe FLUXGATE DEVICE

Publications (2)

Publication Number Publication Date
CN107001934A CN107001934A (zh) 2017-08-01
CN107001934B true CN107001934B (zh) 2019-03-29

Family

ID=56079702

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580065504.4A Active CN107001934B (zh) 2014-12-02 2015-12-02 NiFe磁通门装置的改进工艺

Country Status (5)

Country Link
US (3) US9840781B2 (enExample)
EP (1) EP3227402B1 (enExample)
JP (1) JP6660388B2 (enExample)
CN (1) CN107001934B (enExample)
WO (1) WO2016090063A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9840781B2 (en) * 2014-12-02 2017-12-12 Texas Instruments Incorporated Process for NiFe fluxgate device
US9893141B2 (en) * 2015-02-26 2018-02-13 Taiwan Semiconductor Manufacturing Co., Ltd. Magnetic core, inductor, and method for fabricating the magnetic core
US10017851B2 (en) * 2015-12-22 2018-07-10 Texas Instruments Incorporated Magnetic field annealing for integrated fluxgate sensors
US9771261B1 (en) * 2016-03-17 2017-09-26 Texas Instruments Incorporated Selective patterning of an integrated fluxgate device
US10403424B2 (en) * 2017-06-09 2019-09-03 Texas Instruments Incorporated Method to form magnetic core for integrated magnetic devices
US10164001B1 (en) * 2017-09-18 2018-12-25 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure having integrated inductor therein
KR20190051656A (ko) * 2017-11-07 2019-05-15 삼성전자주식회사 식각 조성물, 실리콘 질화막의 식각 방법, 및 반도체 소자의 제조 방법
CN112913014B (zh) * 2018-10-26 2024-03-26 华为技术有限公司 用于集成稳压器(ivr)应用的电感器
US11237223B2 (en) * 2019-07-24 2022-02-01 Texas Instruments Incorporated Magnetic flux concentrator for in-plane direction magnetic field concentration

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US3715250A (en) * 1971-03-29 1973-02-06 Gen Instrument Corp Aluminum etching solution
US5600297A (en) * 1994-08-28 1997-02-04 U.S. Philips Corporation Magnetic field sensor
US6673675B2 (en) * 2002-04-11 2004-01-06 Micron Technology, Inc. Methods of fabricating an MRAM device using chemical mechanical polishing
CN101427394A (zh) * 2006-04-28 2009-05-06 微门有限公司 薄膜3轴磁通门及其实施方法
CN102789967A (zh) * 2012-08-16 2012-11-21 中国电子科技集团公司第五十五研究所 一种软磁磁芯螺旋微电感的制作方法

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US5945007A (en) * 1992-10-20 1999-08-31 Cohen; Uri Method for etching gap-vias in a magnetic thin film head and product
JPH11354684A (ja) * 1998-06-09 1999-12-24 Nitto Denko Corp 低熱膨張配線基板および多層配線基板
US7077919B2 (en) * 1999-05-20 2006-07-18 Magnetic Metals Corporation Magnetic core insulation
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JP2002100008A (ja) * 2000-09-25 2002-04-05 Hitachi Ltd 薄膜磁気ヘッドとその製造方法
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DE102004052578B4 (de) * 2004-10-29 2009-11-26 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Erzeugen einer unterschiedlichen mechanischen Verformung in unterschiedlichen Kanalgebieten durch Bilden eines Ätzstoppschichtstapels mit unterschiedlich modifizierter innerer Spannung
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KR102190370B1 (ko) 2014-01-10 2020-12-11 삼성전자주식회사 도전 패턴의 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
US9383418B2 (en) 2014-05-23 2016-07-05 Texas Instruments Incorporated Integrated dual axis fluxgate sensor using double deposition of magnetic material
US9840781B2 (en) * 2014-12-02 2017-12-12 Texas Instruments Incorporated Process for NiFe fluxgate device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3715250A (en) * 1971-03-29 1973-02-06 Gen Instrument Corp Aluminum etching solution
US5600297A (en) * 1994-08-28 1997-02-04 U.S. Philips Corporation Magnetic field sensor
US6673675B2 (en) * 2002-04-11 2004-01-06 Micron Technology, Inc. Methods of fabricating an MRAM device using chemical mechanical polishing
CN101427394A (zh) * 2006-04-28 2009-05-06 微门有限公司 薄膜3轴磁通门及其实施方法
CN102789967A (zh) * 2012-08-16 2012-11-21 中国电子科技集团公司第五十五研究所 一种软磁磁芯螺旋微电感的制作方法

Also Published As

Publication number Publication date
WO2016090063A1 (en) 2016-06-09
US20180087161A1 (en) 2018-03-29
US9840781B2 (en) 2017-12-12
CN107001934A (zh) 2017-08-01
JP6660388B2 (ja) 2020-03-11
US10266950B2 (en) 2019-04-23
JP2018500759A (ja) 2018-01-11
US20160155935A1 (en) 2016-06-02
US20190211458A1 (en) 2019-07-11
EP3227402A4 (en) 2018-06-27
EP3227402A1 (en) 2017-10-11
EP3227402B1 (en) 2023-01-18

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