CN106960884A - 点阵式光电探测器 - Google Patents
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Abstract
本发明提供了一种点阵式光电探测器，包含绝缘基板、金属层、第一透明导电氧化物层、绝缘层、呈点阵式的孔洞、孔洞内填充的砷化镓材料、第二透明导电氧化物层以及透明聚光凸点层，通过在绝缘层中点阵式的孔洞中设置光探测材料，然后通过明聚光凸点将光聚集到点阵式孔洞上，这样提升了传感器的灵敏度，同时能够充分利用照射到的光并节省原料，属于一种新型的结构的光电探测器，并且结合材料的选择，提高光电探测器的效果。
Description
技术领域
本发明涉及一种传感器，具体涉及一种点阵式光电探测器。
背景技术
光电探测技术在紫外线辐射检测、环境监测、化学成分分析、污水检测与处理、灾害预警、食品卫生、医疗健康、无线加密通信等方面具有广泛的应用。由于宽禁带半导体(WBG，如氮化镓、碳化硅、氧化锌等)具有不吸收可见光的特性，在紫外探测领域得到广泛的关注，并展开了大量的研究与应用。然而，目前制备大面积高质量单晶WBG材料的工艺复杂且还未完全成熟，材料表面存在大量缺陷态，导致光电传感器响应时间较低。另一方面，制备大面积高质量单晶硅的工艺则已经非常成熟，半导体硅在可见光探测领域是最理想的材料之一，也是紫外光电传感的常用材料。然而，硅材料对紫外光的响应度较低，这是由于紫外光在硅材料中的透射深度极浅(波长370纳米以下，透射深度大于20纳米)，光生载流子主要集中在硅的表面，而传统硅基P-N或P-I-N结型光电探测器件的结深一般大于200nm，载流子复合效应导致光学响应随入射光波长的减小而迅速降低。超浅P-N或P-I-N结(深度大于20纳米)的制备相当困难，传统方法是采用离子注入和精确控制热扩散工艺来制备浅结，但是在硅表面附近易形成P+N结，高掺杂的P+区域会增加载流子的表面复合，降低光电传感器的响应度。一些新开发的浅结技术(比如δ-掺杂技术或激光掺杂技术)制备工艺相当复杂，导致硅基光电传感器价格变得昂贵。
发明内容
本发明提供一种新型结构的基于点阵式光电探测器，它能够充分利用照射到的光并节省原料，同时能够使得传感器的灵敏度得到很大的提升。
本发明所采用的技术方案是：一种点阵式光电探测器，包含：
绝缘基板；
绝缘基板上的金属层，所述金属层上的第一透明导电氧化物层；
所述第一透明导电氧化物层上的绝缘层；
所述绝缘层内均匀分布且呈点阵式的孔洞；
所述孔洞内填充砷化镓材料，并且填充完成后上表面与绝缘层的上表面齐平；
在所述绝缘层和所述砷化镓材料上方形成的第二透明导电氧化物层；
所述第二透明导电氧化物层上形成透明聚光凸点层，所述透明聚光凸点层由聚光凸点形成，其对应点阵式孔洞并且将照射的光分别汇聚至各个点阵式孔洞中的砷化镓材料上。
进一步地，所述孔洞的形状为圆形。
进一步地，所述凸点的形状为圆形凸点，所述透明聚光凸点层由多个圆形凸点相交而形成。
进一步地，所述孔洞为正方形。
进一步地，所述凸点的形状为正方形。
进一步地，所述金属层的材料为银。
进一步地，所述金属层为银纳米颗粒层。
进一步地，所述第二透明导电氧化物层上在两列孔洞的中间位置分别形成金属细栅线。
进一步地，所述第一透明导电氧化物层中还具有金属细栅线。
本发明的有益效果在于：本申请通过绝缘层中点阵式的孔洞中设置光探测材料，然后通过明聚光凸点将光聚集到点阵式孔洞上，这样提升了传感器的灵敏度，同时能够充分利用照射到的光并节省原料，属于一种新型的结构的光电探测器，并且结合材料的选择，提高光电探测器的效果。
附图说明
图1为本发明点阵式光电探测器的结构示意图；
图2为本发明一个实施例中点阵式光电探测器的俯视图；
图3为本发明另一个实施例中点阵式光电探测器的俯视图。
具体实施方式
为了便于理解本发明，下面将参照相关附图对本发明进行更全面的描述。附图中给出了本发明的较佳的实施例。但是，本发明可以以许多不同的形式来实现，并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使对本发明的公开内容的理解更加透彻全面。
下面将结合附图及具体实施例对本发明作进一步详细说明。
参见图1，本发明提供一种点阵式光电探测器，包含：
绝缘基板1；
绝缘基板1上的金属层2，所述金属层2上的第一透明导电氧化物层3；
所述第一透明导电氧化物层3上的绝缘层4；
所述绝缘层4内均匀分布且呈点阵式的孔洞5；
所述孔洞5内填充砷化镓材料，并且填充完成后上表面与绝缘层4的上表面齐平；
在所述绝缘层4和所述砷化镓材料上方形成的第二透明导电氧化物层6；
所述第二透明导电氧化物层6上形成透明聚光凸点层7，所述透明聚光凸点层7由聚光凸点形成，其对应点阵式孔洞5并且将照射的光分别汇聚至各个点阵式孔洞5中的砷化镓材料上。
参见图2，所述孔洞5的形状为圆形。
进一步地，所述凸点的形状为圆形凸点，所述透明聚光凸点层7由多个圆形凸点相交而形成。
参见图3，所述孔洞5为正方形。
进一步地，所述凸点的形状为正方形。
进一步地，所述金属层2的材料为银。
进一步地，所述金属层2为银纳米颗粒层。
进一步地，所述第二透明导电氧化物层6上在两列孔洞5的中间位置分别形成金属细栅线。
进一步地，所述第一透明导电氧化物层3中还具有金属细栅线。
本发明提供了一种点阵式光电探测器，包含绝缘基板、金属层、第一透明导电氧化物层、绝缘层、呈点阵式的孔洞、孔洞内填充的砷化镓材料、第二透明导电氧化物层以及透明聚光凸点层，通过在绝缘层中点阵式的孔洞中设置光探测材料，然后通过明聚光凸点将光聚集到点阵式孔洞上，这样提升了传感器的灵敏度，同时能够充分利用照射到的光并节省原料，属于一种新型的结构的光电探测器，并且结合材料的选择，提高光电探测器的效果。
附图中描述位置关系的用于仅用于示例性说明，不能理解为对本专利的限制，显然，本发明的上述实施例仅仅是为清楚地说明本发明所作的举例，而并非是对本发明的实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明权利要求的保护范围之内。
Claims (9)
1.一种点阵式光电探测器，其特征在于，包含：
绝缘基板；
绝缘基板上的金属层，所述金属层上的第一透明导电氧化物层；
所述第一透明导电氧化物层上的绝缘层；
所述绝缘层内均匀分布且呈点阵式的孔洞；
所述孔洞内填充砷化镓材料，并且填充完成后上表面与绝缘层的上表面齐平；
在所述绝缘层和所述砷化镓材料上方形成的第二透明导电氧化物层；
所述第二透明导电氧化物层上形成透明聚光凸点层，所述透明聚光凸点层由聚光凸点形成，其对应点阵式孔洞并且将照射的光分别汇聚至各个点阵式孔洞中的砷化镓材料上。
2.如权利要求1所述的点阵式光电探测器，其特征在于，所述孔洞的形状为圆形。
3.如权利要求2所述的点阵式光电探测器，其特征在于，所述凸点的形状为圆形凸点，所述透明聚光凸点层由多个圆形凸点相交而形成。
4.如权利要求1所述的点阵式光电探测器，其特征在于，所述孔洞为正方形。
5.如权利要求4所述的点阵式光电探测器，其特征在于，所述凸点的形状为正方形。
6.如权利要求1-5任一项权利要求所述的点阵式光电探测器，其特征在于，所述金属层的材料为银。
7.如权利要求6所述的点阵式光电探测器，其特征在于，所述金属层为银纳米颗粒层。
8.如权利要求1所述的点阵式光电探测器，其特征在于，所述第二透明导电氧化物层上在两列孔洞的中间位置分别形成金属细栅线。
9.如权利要求8所述的点阵式光电探测器，其特征在于，所述第一透明导电氧化物层中还具有金属细栅线。
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| CN103682078A (zh) * | 2012-09-21 | 2014-03-26 | 国家纳米科学中心 | 压力传感器阵列及其制备方法 |
| US9520695B2 (en) * | 2013-10-18 | 2016-12-13 | Soraa Laser Diode, Inc. | Gallium and nitrogen containing laser device having confinement region |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101008099A (zh) * | 2005-12-01 | 2007-08-01 | 三星电子株式会社 | 用多孔模板生产纳米线的方法 |
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| CN103682078A (zh) * | 2012-09-21 | 2014-03-26 | 国家纳米科学中心 | 压力传感器阵列及其制备方法 |
| US9520695B2 (en) * | 2013-10-18 | 2016-12-13 | Soraa Laser Diode, Inc. | Gallium and nitrogen containing laser device having confinement region |
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