CN106957175A - 一种常压制备高纯钛二铝碳粉体材料的方法 - Google Patents
一种常压制备高纯钛二铝碳粉体材料的方法 Download PDFInfo
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Abstract
本发明公开了一种常压制备高纯钛二铝碳粉体材料的方法,该方法包括以下步骤:1)按摩尔比TiC:Ti:Al=(0.6~1.2):(0.9~1.5):(1~1.5)称取原料TiC粉、Ti粉、Al粉;2)将原料混合得到混合粉料;3)将混合粉料置于烧结炉中,在保护性气氛或真空保护下加热到1200~1600℃,之后保持30~180min,冷却后得到钛二铝碳粉体材料。该方法原料易得,配比简单,所用设备和制备工艺简单,合成钛二铝碳粉体时间短,纯度高,无钛三铝碳和TiC杂相存在,适合大规模生产应用。
Description
技术领域
本发明涉及一种常压制备高纯钛二铝碳粉体材料的方法,属于金属性陶瓷粉体材料制备领域。
背景技术
近年来,一种新型三元层状化合物,MAX相(M代表过渡金属元素;A代表主族元素;X代表碳或氮),受到了全世界科学工作者的广泛关注。其既具有类似金属优良的导电、导热及加工性能,又具有类似陶瓷的高熔点、高热稳定性、良好的耐腐蚀性能和抗氧化性能。钛二铝碳(Ti2AlC)是MAX家族211相中的典型成员,发现于上个世纪六十年代(W.Jeitschko等.J.Less-Common Met.,1963,7(2),133-138)。它具有较低的密度(4.11g/cm3)、较低的显微硬度(4.5GPa)、较高的电导率(0.36μΩ·m)、较高的热导率(8.2×10-6·K-1)、较高的杨氏模量(277GPa)和剪切模量(144GPa)(Z.M.Sun等.Int.Mater.Rev.,2011,56(3),143-166),这些优良性能使MAX成为一种非常有潜力的材料,未来能够广泛应用于能源、电子和机械等领域,因此制备高纯度的钛二铝碳粉末具有十分重要的意义。
近几十年来,大多数的研究工作主要集中在钛二铝碳粉体和块体材料的制备。W.Jeitschko等人将TiC、Ti、Al和C粉封装在真空石英管中,电弧熔融后在1200℃退火170~500h制备出钛二铝碳粉体(W.Jeitschko等.Monatash Chem.,1963,94(2),672-677)。H.Nowotny等人将TiC、Ti、Al和C粉放置于氧化铝坩埚内,在氢气氛保护下,1530℃温度烧结20h得到钛二铝碳粉体(H.Nowotny等.J.Solid State Chem.,1980,32,213-219)。以上两种方法工艺复杂,耗时过长,仅作为实验室研究小规模合成。文献报道了研究人员利用热压(HP)或者热等静压(HIP)烧结技术制备钛二铝碳。B.C.Mei等人以TiC、Ti、Al为原料,利用HP烧结在1400℃得到了钛二铝碳块体,但是产物中含有Ti3AlC2杂相(B.C.Mei等.Mater.Sci.Tech-Lond.,2005,13(4),361-364)。J.F.Zhu等人将Ti、Al、C原料高能球磨后,利用HP烧结合成了钛二铝碳块体(J.F.Zhu等.Mat.Sci.Eng.A,2008,490(1-2),62-65)。M.W.Barsoum等人以Ti、C和Al4C3粉为原料,在40MPa、1600℃下热压4h或者300℃下热压30h,合成了纯度达96wt.%以上的钛二铝碳块体(M.W.Barsoum等.Pro.Solid.Sta.Chem.,2000,28,201-206)。Y.C.Zhou等人以Ti、Al和C粉为原料,在30MPa、1400℃下热压1h,合成了钛二铝碳块体(Y.C.Zhou等.Z.Metallkd.,2002,93(1),66-67)。J.F.Zhu等人先用机械合金化将Ti、Al、C粉球磨成TiAl、TiC及含少量Ti,Al的混合粉体,再在真空或气氛中热压制备出钛二铝碳块体(J.F.Zhu等.专利,2006,CN1958514A)。C.G.Bo等人以TiAl、TiC为原料,在真空热压或等静压条件下制备出纯度高达99wt.%的钛二铝碳块体(C.G.Bo等.专利,2016,CN106032323A)。但是以HP或者HIP制备的钛二铝碳粉体需要研磨成细粉,工艺复杂,且热压设备成本过高,限制了其大规模生产和应用。此外,C.G.Bo等人把TiH2、Al和TiC等原料与有机溶剂在超声波机分散后,采用喷雾干燥法造粒制备出球形原料,最后在真空中烧结得到钛二铝碳块体,经过研磨和筛分得到多孔钛二铝碳球形粉体,但是物相结果中发现存在大量的Ti3AlC2和Al2O3杂相,且制备工艺过于繁杂,成本过高,难以应用(C.G.Bo等.专利,2016,CN201610218497.3)。还有研究人员利用等离子放电烧结技术(SPS)来制备钛二铝碳:B.C.Mei等人以Ti、Al、C粉为原料,在30MPa、1100℃条件下通过SPS保温1h得到较纯的钛二铝碳块体,相对致密度达99.8%(B.C.Mei等.Mater.Lett.,2005,59(1),131-134);J.F.Zhang等人以Ti粉、Al粉和碳粉为原料,利用SPS烧结10~15min得到主相为钛二铝碳块体,研磨后得到钛二铝碳粉体,但是在最后的物相结果中发现有杂相的存在(J.F.Zhang等.专利,2016,CN201610060019.4)。R.Shrinivas等人利用化学气相沉积(CVD)技术在TiAl粉上原位生长出碳纳米管(CNTS)的混合物,最后利用SPS技术制备出单相的钛二铝碳块体(R.Shrinivas等.J.Alloy.Compd.,2010,490(1-2),155-159);F.Yang等人球磨Ti和Al粉得到TiAl,再将TiAl粉与石墨粉混合后1100℃SPS烧结得到钛二铝碳块体(F.Yang等.专利,2011,CN102139370A)。SPS制备钛二铝碳块体虽热具有速度快、样品致密度高的优点,但是最后块体需要大量时间研磨成粉末,且成本高、工艺复杂和难以产业化。近年来,燃烧法即自蔓延(SHS)技术被广泛应用于制备钛二铝碳:J.M.Guo等人以Ti、Al、C粉为原料,燃烧制备了钛二铝碳粉体,但是产物中含有少量的Ti3AlC2和TiC杂相(J.M.Guo等.Acta.Metall.Sin.,2003,39(3),315-319);C.L.Yeh等人在Ti、Al、C原料中添加TiC和Al4C3,再利用SHS技术成功将产物中钛二铝碳纯度从85wt.%提高到90wt.%(C.L.Yeh等.J.Alloy.Compd.,2009,470(1-2),424-428);B.C.Mei等人以Ti、TiC、Al和C粉作为原料,在微波烧结炉中点燃,制备出晶粒细小的钛二铝碳粉体(B.C.Mei等.专利,2007,CN101037201A);J.M.Guo等人以Ti,Al,C粉为原料,Ti和C粉作为引燃剂,用电阻丝点燃反应物,得到钛二铝碳粉体(J.M.Guo等.专利,2009,CN101531531A)。虽然燃烧合成法可以直接制备出钛二铝碳粉体,但是产物纯度较低,往往含有大量的Ti3AlC2和TiC等杂相,且工艺复杂,限制了其在实际生产中的推广应用。Z.W.Liu等人将混合均匀的Ti、Al、C粉冷压成型后放入炉中加热到700~800℃左右,使用功率为1~1.5kW超声辅助热爆烧结获得钛二铝碳块体,但是产物物相结果显示有很多TiC和Ti3AlC2杂相残留(Z.W.Liu等.专利,2015,CN201510743014.7);Y.Liu等人以Ti、Al和TiC粉为原料,也同样通过热爆反应制备出钛二铝碳块体,研磨后经过酸洗获得较纯的钛二铝碳粉体,但是该方法设备昂贵、过程复杂,产物经过酸洗还是存在大量TiC杂相(Y.Liu等.专利,2015,CN201510658890.X)。
因此,从工业化生产的角度出发,不能使用HP、HIP、SPS、SHS以及热爆等高成本工艺复杂的烧结设备,应该采用常压烧结技术,在较短的时间内生产出纯度较高的钛二铝碳粉末,降低生产成本,提高效率。
发明内容
技术问题:本发明的目是提供一种常压制备高纯钛二铝碳粉体材料的方法,该方法成本低廉、工艺简单和易产业化,制备的钛二铝碳粉体纯度高。该方法改变传统的较为复杂制备工艺,直接使用TiC、Ti、Al粉混合的方式,以常压烧结技术替代昂贵的真空、热压、热等静压、自蔓延、微波和SPS等烧结技术,在1200~1600℃范围内合成高纯度的高纯钛二铝碳粉体,解决现有制备技术中存在的过程复杂、制备时间长、设备昂贵以及产物纯度低等问题。
技术方案:本发明提供了一种常压制备高纯钛二铝碳粉体材料的方法,该方法包括以下步骤:
1)按摩尔比TiC:Ti:Al=(0.6~1.2):(0.9~1.5):(1~1.5)称取原料TiC粉、Ti粉、Al粉;
2)将步骤1)中称取的原料混合均匀,得到混合粉料;
3)将步骤2)得到的混合粉料置于烧结炉中,在保护性气氛或真空保护下加热到1200~1600℃,之后保持30~180min,冷却后得到高纯度的钛二铝碳粉体材料。
其中:
步骤2)中所述原料混合均匀是指将称取的原料在混粉机中混合5~25h,得到混合粉料。
步骤3)中所述的保护性气氛为Ar气。
步骤3)中所述的烧结炉为普通烧结炉,所述加热到1200~1600℃的升温速率为4~12℃/min。
有益效果:本发明与现有技术相比,具有以下优点:
1)直接使用TiC、Ti、Al粉作为初始原料,所有原料简单易得;
2)工艺简单,直接将初始原料混合即可,不需要经过高能机械球磨和冷压等成型过程,生产效率高,节约成本;
3)在常压下普通烧结炉中,保护性气氛或真空保护下,1200~1600℃范围短时间内直接合成高纯钛二铝碳,设备简单、成本低廉,适合大规模生产;
4)产物纯度高,在XRD图谱中无明显TiC和Ti3AlC2等杂质相存在;
5)该技术制备出的高纯钛二铝碳粉末具有典型的层片状结构。
附图说明
图1是本发明常压烧结制备出的钛二铝碳粉体的X-ray衍射(XRD)图谱;
图2是本发明常压烧结制备出的钛二铝碳粉体的扫描电镜(SEM)图片。
具体实施方式
下面结合实例对本发明进行详细的描述:
实施例1:
按照TiC:Ti:Al=0.6:0.9:1的摩尔比配料,称取TiC粉10.26克、Ti粉12.31克、Al粉7.71克,放入塑料瓶中,以ZrO2球为介质,在混粉机上混合5h,将混合后的粉末放入普通管式炉中,Ar气氛或真空保护,以4℃/min的升温速率升温至1200℃,保温30min,冷却后即可制的高纯度钛二铝碳粉体。
实施例2:
按照TiC:Ti:Al=0.6:0.9:1.5的摩尔比配料,称取TiC粉10.26克、Ti粉12.31克、Al粉11.56克,放入塑料瓶中,以ZrO2球为介质,在混粉机上混合6h,将混合后的粉末放入普通管式炉中,Ar气氛或真空保护,以5℃/min的升温速率升温至1250℃,保温40min,冷却后即可制的高纯度钛二铝碳粉体。
实施例3:
按照TiC:Ti:Al=0.6:1.5:1的摩尔比配料,称取TiC粉10.26克、Ti粉20.51克、Al粉7.71克,放入塑料瓶中,以ZrO2球为介质,在混粉机上混合7h,将混合后的粉末放入普通管式炉中,Ar气氛或真空保护,以6℃/min的升温速率升温至1300℃,保温50min,冷却后即可制的高纯度钛二铝碳粉体。
实施例4:
按照TiC:Ti:Al=0.6:1.5:1.5的摩尔比配料,称取TiC粉10.26克、Ti粉20.51克、Al粉11.56克,放入塑料瓶中,以ZrO2球为介质,在混粉机上混合8h,将混合后的粉末放入普通管式炉中,Ar气氛或真空保护,以7℃/min的升温速率升温至1320℃,保温55min,冷却后即可制的高纯度钛二铝碳粉体。
实施例5:
按照TiC:Ti:Al=0.8:1.1:1.1的摩尔比配料,称取TiC粉13.68克、Ti粉15.04克、Al粉8.48克,放入塑料瓶中,以ZrO2球为介质,在混粉机上混合12h,将混合后的粉末放入普通管式炉中,Ar气氛或真空保护,以8℃/min的升温速率升温至1350℃,保温60min,冷却后即可制的高纯度钛二铝碳粉体。
实施例6:
按照TiC:Ti:Al=1.0:1.3:1.3的摩尔比配料,称取TiC粉17.11克、Ti粉17.78克、Al粉10.02克,放入塑料瓶中,以ZrO2球为介质,在混粉机上混合18h,将混合后的粉末放入普通管式炉中,Ar气氛或真空保护,以10℃/min的升温速率升温至1450℃,保温120min,冷却后即可制的高纯度钛二铝碳粉体。
实施例7:
按照TiC:Ti:Al=1.2:1.5:1.5的摩尔比配料,称取TiC粉20.53克、Ti粉20.51克、Al粉11.56克,放入塑料瓶中,以ZrO2球为介质,在混粉机上混合25h,将混合后的粉末放入普通管式炉中,Ar气氛或真空保护,以12℃/min的升温速率升温至1600℃,保温180min,冷却后即可制的高纯度钛二铝碳粉体。
实施例8:
按照TiC:Ti:Al=1.2:1.5:1的摩尔比配料,称取TiC粉20.53克、Ti粉20.51克、Al粉7.71克,放入塑料瓶中,以ZrO2球为介质,在混粉机上混合20h,将混合后的粉末放入普通管式炉中,Ar气氛或真空保护,以11℃/min的升温速率升温至1550℃,保温160min,冷却后即可制的高纯度钛二铝碳粉体。
实施例9:
按照TiC:Ti:Al=1.2:0.9:1.5的摩尔比配料,称取TiC粉20.53克、Ti粉12.31克、Al粉11.56克,放入塑料瓶中,以ZrO2球为介质,在混粉机上混合16h,将混合后的粉末放入普通管式炉中,Ar气氛或真空保护,以11℃/min的升温速率升温至1500℃,保温140min,冷却后即可制的高纯度钛二铝碳粉体。
所制备的钛二铝碳粉体的XRD图谱如图1所示。由图可见,产物纯度高,在XRD结果中无明显Ti3AlC2和TiC杂相存在。钛二铝碳粉体的形貌如图2所示,由图可见,钛二铝碳颗粒呈现典型的层片状结构,颗粒尺寸在10μm范围内。
Claims (4)
1.一种常压制备高纯钛二铝碳粉体材料的方法,其特征在于:该方法包括以下步骤:
1)按摩尔比TiC:Ti:Al=(0.6~1.2):(0.9~1.5):(1~1.5)称取原料TiC粉、Ti粉、Al粉;
2)将步骤1)中称取的原料混合均匀,得到混合粉料;
3)将步骤2)得到的混合粉料置于烧结炉中,在保护性气氛或真空保护下加热到1200~1600℃,之后保持30~180min,冷却后得到高纯钛二铝碳粉体材料。
2.根据权利要求1所述一种常压制备高纯钛二铝碳粉体材料的方法,其特征在于:步骤2)中所述原料混合均匀是指将称取的原料在混粉机中混合5~25h,得到混合粉料。
3.根据权利要求1所述一种常压制备高纯钛二铝碳粉体材料的方法,其特征在于:步骤3)中所述的保护性气氛为Ar气。
4.根据权利要求1所述一种常压制备高纯钛二铝碳粉体材料的方法,其特征在于:步骤3)中所述的烧结炉为普通烧结炉,所述加热到1200~1600℃的升温速率为4~12℃/min。
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1724467A (zh) * | 2005-06-15 | 2006-01-25 | 北京交通大学 | 一种碳化锡钛陶瓷粉体的常压合成方法 |
CN1958514A (zh) * | 2006-10-30 | 2007-05-09 | 陕西科技大学 | 一种Ti2AlC陶瓷材料的制备方法 |
CN101531531A (zh) * | 2009-04-03 | 2009-09-16 | 红河学院 | 一种制备高性能Ti2AlC陶瓷粉体的方法 |
CN102992767A (zh) * | 2012-11-19 | 2013-03-27 | 西安理工大学 | 一种高纯Ti3AlC2块体材料的制备方法 |
CN105777127A (zh) * | 2016-02-29 | 2016-07-20 | 东南大学 | 一种高纯度Ti2SnC粉体的制备方法 |
CN106032323A (zh) * | 2016-04-06 | 2016-10-19 | 中国科学院金属研究所 | 一种以TiAl粉体为原料的Ti2AlC陶瓷粉体制备方法 |
CN106882965A (zh) * | 2017-03-10 | 2017-06-23 | 东南大学 | 一种常压制备高纯钛二铝碳粉体材料的方法 |
-
2017
- 2017-03-17 CN CN201710159575.1A patent/CN106957175A/zh not_active Withdrawn
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1724467A (zh) * | 2005-06-15 | 2006-01-25 | 北京交通大学 | 一种碳化锡钛陶瓷粉体的常压合成方法 |
CN1958514A (zh) * | 2006-10-30 | 2007-05-09 | 陕西科技大学 | 一种Ti2AlC陶瓷材料的制备方法 |
CN101531531A (zh) * | 2009-04-03 | 2009-09-16 | 红河学院 | 一种制备高性能Ti2AlC陶瓷粉体的方法 |
CN102992767A (zh) * | 2012-11-19 | 2013-03-27 | 西安理工大学 | 一种高纯Ti3AlC2块体材料的制备方法 |
CN105777127A (zh) * | 2016-02-29 | 2016-07-20 | 东南大学 | 一种高纯度Ti2SnC粉体的制备方法 |
CN106032323A (zh) * | 2016-04-06 | 2016-10-19 | 中国科学院金属研究所 | 一种以TiAl粉体为原料的Ti2AlC陶瓷粉体制备方法 |
CN106882965A (zh) * | 2017-03-10 | 2017-06-23 | 东南大学 | 一种常压制备高纯钛二铝碳粉体材料的方法 |
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