CN106910774A - 圆弧角u形槽栅结构的碳化硅功率mosfet器件及其制备方法 - Google Patents

圆弧角u形槽栅结构的碳化硅功率mosfet器件及其制备方法 Download PDF

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CN106910774A
CN106910774A CN201710128637.2A CN201710128637A CN106910774A CN 106910774 A CN106910774 A CN 106910774A CN 201710128637 A CN201710128637 A CN 201710128637A CN 106910774 A CN106910774 A CN 106910774A
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sod
silicon carbide
layer
power mosfet
carbide power
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袁俊
倪炜江
张敬伟
李明山
牛喜平
徐妙玲
孙安信
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Century Goldray Semiconductor Co Ltd
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Abstract

本发明公开了一种圆弧角U形槽栅结构的碳化硅功率MOSFET器件，所述碳化硅功率MOSFET器件的U型沟槽底部及四周底角设置有一层SOD涂层。本申请在U形沟槽刻蚀和长栅极氧化层之后，添加了SOD(Spin‑on‑Dielectric)工艺技术，采用适量的SOD光阻材料通过旋涂的方式，在U沟槽底部角落处形成薄层的圆滑的Low‑k介质层或者SiO2层，然后再制作多晶硅栅极，以减缓器件在U形沟槽栅极底部附近栅极氧化层的提前击穿。器件栅极沟道底部比现有器件多了一薄层的SiO2层或者其他Low‑k介质层，沟槽底部更加圆滑同时整体的氧化或绝缘介质层也比侧壁的栅氧更厚，使得其抗强电场能力更好，增强了器件的耐压和可靠性。

Description

圆弧角U形槽栅结构的碳化硅功率MOSFET器件及其制备方法
技术领域
本发明属于半导体器件领域，具体涉及一种圆弧角U形槽栅结构的碳化硅功率MOSFET器件及其制备方法。
背景技术
SiC作为近十几年来迅速发展的宽禁带半导体材料，与其它半导体材料，比如Si，GaN及GaAs相比，SiC材料具有宽禁带、高热导率、高载流子饱和迁移率、高功率密度等优点。SiC可以热氧化生成二氧化硅，使得SiC MOSFET器件和电路的实现成为可能。自20世纪90年代以来，SiC MOSFET已在开关稳压电源、高频加热、汽车电子以及功率放大器等方面取得了广泛的应用。
然而，作为一种功率器件，碳化硅MOSFET在性能上仍然存在很大的问题。其中最关键的一个就是击穿电压和导通电阻之间的制约关系，由于漂移区的限制，提高击穿电压和降低导通电阻往往不能同时实现，这就导致器件在大电压下工作时会有很大的能量损耗。同时，传统的横向VDMOSFET结构(如图1左所示)，由于存在JFET区电阻，导通阻抗的进一步降低受到限制。U形沟槽功率MOSFET结构(如图1右所示)消除了JFET结构，使得导通电阻能进一步降低，使当前SiC功率MOS器件更有优势的器件结构。但由于U形沟槽在底部附近电场边缘集中现象，会导致器件在高漏极电压下，栅氧化层沟槽底部角落高电场处迅速击穿而导致器件失效。同时也增加了器件设计和工艺的难度。
发明内容
针对现有技术中存在的问题，本发明的目的在于提供一种圆弧角U形槽栅结构的碳化硅功率MOSFET器件，其有效解决了现有技术中存在的问题。本发明的另一目的在于提供一种制备本发明的圆弧角U形槽栅结构的碳化硅功率MOSFET器件的方法。
为实现上述目的，本发明采用以下技术方案：
圆弧角U形槽栅结构的碳化硅功率MOSFET器件，所述碳化硅功率MOSFET器件的U型沟槽底部及四周底角设置有一层SOD涂层。
进一步，所述SOD涂层为SiO2层或Low-k介质层。
一种制备圆弧角U形槽栅结构的碳化硅功率MOSFET器件的方法，所述方法为：
在常规的各类Trench MOSFET栅极氧化工艺后，选取SOD光阻材料，将SOD光阻涂布在晶片上，使SOD材料主要沉积在Trench沟槽的底部；然后采用高温固化合成工艺，使SOD材料固化合成SiO2层或Low-k介质层。
一种制备圆弧角U形槽栅结构的碳化硅功率MOSFET器件的方法，所述方法为：
在U形沟槽刻蚀后先采用SOD工艺在U沟槽底部及四周底角处形成薄层的圆滑的Low-k介质层或者SiO2层结构，然后再生长栅极氧化层。
本发明具有以下有益技术效果：
本申请在U形沟槽刻蚀和长栅极氧化层之后，添加了SOD(Spin-on-Dielectric)工艺技术，采用适量的SOD光阻材料通过旋涂的方式，在U沟槽底部角落处形成薄层的圆滑的Low-k介质层或者SiO2层，然后再制作多晶硅栅极，以减缓器件在U形沟槽栅极底部附近栅极氧化层的提前击穿。器件栅极沟道底部比现有器件多了一薄层的SiO2层或者其他Low-k介质层，沟槽底部更加圆滑同时整体的氧化或绝缘介质层也比侧壁的栅氧更厚，使得其抗强电场能力更好，增强了器件的耐压和可靠性。
附图说明
图1为现有技术中横向DMOSFET(左)和U沟槽UTMOSFET(右)的结构示意图；
图2为本发明实施例的圆弧角U形槽栅结构的碳化硅功率MOSFET器件的结构示意图；
图3为本发明另一实施例的圆弧角U形槽栅结构的碳化硅功率MOSFET器件的结构示意图。
具体实施方式
下面，参考附图，对本发明进行更全面的说明，附图中示出了本发明的示例性实施例。然而，本发明可以体现为多种不同形式，并不应理解为局限于这里叙述的示例性实施例。而是，提供这些实施例，从而使本发明全面和完整，并将本发明的范围完全地传达给本领域的普通技术人员。
本发明了提供了一种圆弧角U形槽栅结构的碳化硅功率MOSFET器件，该碳化硅功率MOSFET器件的U型沟槽底部及四周底角设置有一层SOD涂层，该SOD涂层为SiO2层或Low-k介质层。在常规栅氧后增加了沟槽底部的SOD涂层结构在减小U形槽栅拐角处的电场的同时增加了沟槽底部介质层的厚度，减轻和避免器件的提前击穿或失效。
如图2所示，本发明还提供了一种制备圆弧角U形槽栅结构的碳化硅功率MOSFET器件的方法，该方法为：
在常规的各类Trench MOSFET栅极氧化工艺后，选取合适的低CP值SOD光阻材料，调节合适的喷吐量及其他工艺条件，将SOD光阻涂布在晶片上，使SOD材料主要沉积在Trench沟槽的底部；采用高温固化合成工艺，使SOD材料固化合成SiO2层或者其他Low-k介质层；例如AZ Spinfil的SOD光阻(主要成分为PSZ Perhydro-polysilazane，6％-25％)，需要在400℃下经过4小时的固化合成工艺，以形成SiO2层。
如图3所示，本发明还提供了另外一种制备圆弧角U形槽栅结构的碳化硅功率MOSFET器件的方法，该方法为：
在U形沟槽刻蚀后先采用SOD工艺在U沟槽底部及四周底角处形成薄层的圆滑的Low-k介质层或者SiO2层结构，然后再生长栅极氧化层。
SOD旋涂材料的选择：
对于SOD旋涂光阻材料，现有的主要可选择材料及各自k值如下表，本专利包括但不限于下表材料。
上面所述只是为了说明本发明，应该理解为本发明并不局限于以上实施例，符合本发明思想的各种变通形式均在本发明的保护范围之内。

Claims (4)

1.圆弧角U形槽栅结构的碳化硅功率MOSFET器件，其特征在于，所述碳化硅功率MOSFET器件的U型沟槽底部及四周底角设置有一层SOD涂层。
2.根据权利要求要求1所述的圆弧角U形槽栅结构的碳化硅功率MOSFET器件，其特征在于，所述SOD涂层为SiO2层或Low-k介质层。
3.一种制备权利要求1-2任一所述的圆弧角U形槽栅结构的碳化硅功率MOSFET器件的方法，其特征在于，所述方法为：
在常规的各类Trench MOSFET栅极氧化工艺后，选取SOD光阻材料，将SOD光阻涂布在晶片上，使SOD材料主要沉积在Trench沟槽的底部；然后采用高温固化合成工艺，使SOD材料固化合成SiO2层或Low-k介质层。
4.一种制备权利要求1-2任一所述的圆弧角U形槽栅结构的碳化硅功率MOSFET器件的方法，其特征在于，所述方法为：
在U形沟槽刻蚀后先采用SOD工艺在U沟槽底部及四周底角处形成Low-k介质层或者SiO2层结构，然后再生长栅极氧化层。
CN201710128637.2A 2017-03-06 2017-03-06 圆弧角u形槽栅结构的碳化硅功率mosfet器件及其制备方法 Pending CN106910774A (zh)

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Application publication date: 20170630