CN106876343A - A kind of power model of integrated water-filled radiator - Google Patents
A kind of power model of integrated water-filled radiator Download PDFInfo
- Publication number
- CN106876343A CN106876343A CN201710046760.XA CN201710046760A CN106876343A CN 106876343 A CN106876343 A CN 106876343A CN 201710046760 A CN201710046760 A CN 201710046760A CN 106876343 A CN106876343 A CN 106876343A
- Authority
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- China
- Prior art keywords
- heat
- filled radiator
- chip
- radiating
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
A kind of power model of integrated water-filled radiator, heat-radiating substrate including integrated water-filled radiator, by reflow soldering in the insulated substrate DBC of heat-radiating substrate, it is welded in the chip on insulated substrate DBC, realize the aluminum steel of chip and the electrical connection of insulated substrate DBC surfaces layers of copper, the Silica hydrogel of protection chip and aluminum steel, coat the plastic casing of power terminal, it is characterized in that described heat-radiating substrate front bonds with insulated substrate DBC, the heat-radiating substrate back side is water-filled radiator, the bottom of heat-radiating substrate is provided with least two intake-outlets connection external water circulation, constitute the overall cooling system of module；The position of at least two intake-outlet is arranged on the short brink or long side of heat-radiating substrate, and the intake-outlet quantity is between 2 to 10；Directly be integrated in water-cooling system on heat-radiating substrate by the present invention, effectively avoids due to the leak Problem of Failure caused by module flatness and radiator poor sealing.
Description
Technical field
The present invention relates to a kind of high reliability power model of integrated water-filled radiator, belong to the power mould of power electronics
Block design, manufacture and applied technical field.
Background technology
Traditional power model is installed on water-filled radiator by the way of sealing ring sealing to be radiated, but
Due to the flatness difference of module bottom surface in practical application, and between multiple parts water-cooled is caused the reason for poor fit etc.
Radiator leak and cause power model to fail.Using in original heat-radiating substrate integrated water-filled radiator directly below, thoroughly do away with
The poorly sealed problem of current cooling system, improves the reliability of module application.
The content of the invention
It is an object of the invention to overcome the shortcomings of that prior art is present, and provide a kind of structure composition rationally, user
Just, by the way of integrated water-filled radiator, the high leakproofness of water-cooling system had both been improve, power model application is enhanced again can
By the power model of the integrated water-filled radiator of property.
The purpose of the present invention is completed by following technical solution, a kind of power model of integrated water-filled radiator,
Heat-radiating substrate including integrated water-filled radiator, by reflow soldering in the insulated substrate DBC of heat-radiating substrate, is welded in insulation base
Chip on plate DBC, realizes the silicon of the aluminum steel of chip and the electrical connection of insulated substrate DBC surfaces layers of copper, protection chip and aluminum steel
Gel, coats the plastic casing of power terminal, and described heat-radiating substrate front bonds with insulated substrate DBC, the heat-radiating substrate back side
It is water-filled radiator, the bottom of heat-radiating substrate is provided with least two intake-outlets connection external water circulation, constitutes module entirety
Cooling system.
As preferred：The position of at least two intake-outlet is arranged on the short brink or long side of heat-radiating substrate,
The intake-outlet quantity is between 2 to 10.
As preferred：The heat-radiating substrate back side was provided with the die cavity of water, and was covered with size identical, increase in an orderly manner
Contact area is improving the radiating pin of radiating effect.
As preferred：The radiating aciculiform shape is cylindrical, conical, square or pyramid.
As preferred：By backflow between the chip and insulated substrate DBC, between insulated substrate DBC and heat-radiating substrate
The mode of welding is bonded together, and reflow soldering is using one of materials containing Sn such as SnAg, SnAgCu, PbSnAg.
As preferred：The aluminum steel is bonded by ultrasonic wave mode and is connected in the layers of copper of chip and insulated substrate, and
Realize corresponding circuit topology.
As preferred：The plastic casing of the cladding power terminal, its material is PPA, the high-temperature insulation such as PPS, PBT
The good plastics of energy；The power terminal coated by plastic casing, its material is copper or copper alloy, and surface is coated with nickel, gold
Etc. one of solderable metal material.
As preferred：One layer of embedding is used to protect the Silica hydrogel of chip and aluminum wire bonding point in the shell, and it highly covers
Lid insulated substrate, chip, bonding aluminum steel.
The mistake water type chamber of water-filled radiator is bonded in module heat radiator bottom by the present invention by welding procedure, forms reliable
High leakproofness coordinate, cavity bottom both sides are provided with intake-outlet, for connecting external water circulation, to reach the work of radiating
With.This power model is using structure with water-filled radiator one, it is to avoid conventional mounting mode is flat due to module mounting surface
The drainage that the problems such as whole degree difference and poorly sealed sealing ring causes, enhances the sealing of water-cooling system, improves
The reliability of module application.
The power module architectures of present invention design are rationally, easy to use, by the way of integrated water-filled radiator, both improve
The high leakproofness of water-cooling system, enhances the reliability of power model application again.
Brief description of the drawings
Fig. 1 is the power module architectures schematic diagram of integrated water-filled radiator.
Fig. 2 is the A-A cross section structure diagrams in Fig. 1.
Fig. 3 is close-up schematic view at B in Fig. 2.
The mark of each part is as follows in accompanying drawing：1st, the heat-radiating substrate of integrated water-filled radiator；2nd, insulated substrate DBC；3rd, core
Piece；4th, Silica hydrogel；5th, signal terminal；6th, power terminal；7th, plastic casing.
Specific embodiment
Below in conjunction with accompanying drawing, the invention will be further described.Shown in Fig. 1-3, a kind of power of integrated water-filled radiator
Module, including integrated water-filled radiator heat-radiating substrate 1, by reflow soldering in the insulated substrate 2 of heat-radiating substrate, be welded in absolutely
Chip 3 on edge substrate 2, realizes the aluminum steel of the surface layers of copper electrical connection of chip 3 and insulated substrate 2, protection chip 3 and aluminum steel
Silica hydrogel 4, coats the plastic casing 7 of power terminal 6, and the described front of heat-radiating substrate 1 bonds with insulated substrate 2, heat-radiating substrate 1
The back side is water-filled radiator, and the bottom of heat-radiating substrate 1 is provided with least two intake-outlets connection external water circulation, constitutes module
Overall cooling system.
The position of at least two intake-outlet of the present invention is arranged on the short brink or long side of heat-radiating substrate 1, institute
Intake-outlet quantity is stated between 2 to 10.
The back side of the heat-radiating substrate 1 was provided with the die cavity of water, and was covered with size identical, increase contact area in an orderly manner
To improve the radiating pin of radiating effect；The radiating aciculiform shape is cylindrical, conical, square or pyramid.
Glued by way of reflow soldering between the chip 3 and insulated substrate 2, between insulated substrate 2 and heat-radiating substrate 1
Together, reflow soldering is using one of materials containing Sn such as SnAg, SnAgCu, PbSnAg for knot.
The aluminum steel is bonded by ultrasonic wave mode and is connected in the layers of copper of chip 3 and insulated substrate 1, and is realized corresponding
Circuit topology.
The plastic casing 7 of the cladding power terminal 6, its material is PPA, and the high-temperature insulation such as PPS, PBT is functional
Plastics；The power terminal 6 coated by plastic casing 7, its material is copper or copper alloy, and surface is coated with nickel, Jin Dengke
One of welding metal material.
One layer of embedding is used to protect the Silica hydrogel 4 of chip 3 and aluminum wire bonding point in the shell 7, its height covering insulation
Substrate 1, chip 3, bonding aluminum steel.
The present invention completes as follows：
a）Required chip 3 is adhered on insulated substrate 2 by way of reflow soldering；
b）Insulated substrate 2 is welded on the substrate 1 of integrated water-filled radiator, the heat transfer produced when making chip 3 work is arrived
Cooling system；
c）The plastic casing 7 for coating power terminal 6 and signal terminal 5 is fixed on heat-radiating substrate 1, both mating surfaces coating one
Layer fluid sealant, it is ensured that the Silica hydrogel 4 of later stage embedding not spill and leakage.
d）Between each chip 3, between chip 3 and corresponding layers of copper on insulated substrate 2 and layers of copper and plastic casing cladding
Terminal 5,6 between, reliable electrical connection is realized by aluminum wire bonding；
e）Module after being bonded to capsule pours into Silica hydrogel 4, its height covering chip 3, insulated substrate 2, bonding aluminum steel, then will
Silica hydrogel 4 solidifies；
f）Finally cover outer casing upper cover.
Claims (8)
1. the heat-radiating substrate of a kind of power model of integrated water-filled radiator, including integrated water-filled radiator, by reflow soldering
In the insulated substrate DBC of heat-radiating substrate, the chip on insulated substrate DBC is welded in, realizes chip and insulated substrate DBC surfaces copper
The Silica hydrogel of the aluminum steel of layer electrical connection, protection chip and aluminum steel, coats the plastic casing of power terminal, it is characterised in that described
Heat-radiating substrate front and insulated substrate DBC bond, the heat-radiating substrate back side is water-filled radiator, and the bottom of heat-radiating substrate is provided with
At least two intake-outlets connect external water circulation, constitute the overall cooling system of module.
2. the power model of integrated water-filled radiator according to claim 1, it is characterised in that at least two turnover
The position at the mouth of a river is arranged on the short brink or long side of heat-radiating substrate, and the intake-outlet quantity is between 2 to 10.
3. the power model of integrated water-filled radiator according to claim 1 and 2, it is characterised in that the heat-radiating substrate back of the body
Face was provided with the die cavity of water, and was covered with size identical, increase contact area in an orderly manner to improve the radiating pin of radiating effect.
4. the power model of integrated water-filled radiator according to claim 3, it is characterised in that the radiating aciculiform shape is
Cylindrical, conical, square or pyramid.
5. the power model of integrated water-filled radiator according to claim 1, it is characterised in that the chip and insulation base
It is bonded together by way of reflow soldering between plate DBC, between insulated substrate DBC and heat-radiating substrate, reflow soldering is used
One of materials containing Sn such as SnAg, SnAgCu, PbSnAg.
6. the power model of integrated water-filled radiator according to claim 1, it is characterised in that the aluminum steel is by ultrasound
Ripple mode is bonded and is connected in the layers of copper of chip and insulated substrate, and realizes corresponding circuit topology.
7. the power model of integrated water-filled radiator according to claim 1, it is characterised in that the cladding power terminal
Plastic casing, its material is PPA, the high-temperature insulation plastics of good performance such as PPS, PBT；It is described by plastic casing coat
Power terminal, its material is copper or copper alloy, and surface is coated with one of solderable metal material such as nickel, gold.
8. the power model of the integrated water-filled radiator according to claim 1 or 7, it is characterised in that embedding in the shell
One layer of Silica hydrogel for being used to protect chip and aluminum wire bonding point, its height covering insulated substrate, chip, bonding aluminum steel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710046760.XA CN106876343A (en) | 2017-01-22 | 2017-01-22 | A kind of power model of integrated water-filled radiator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710046760.XA CN106876343A (en) | 2017-01-22 | 2017-01-22 | A kind of power model of integrated water-filled radiator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106876343A true CN106876343A (en) | 2017-06-20 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710046760.XA Pending CN106876343A (en) | 2017-01-22 | 2017-01-22 | A kind of power model of integrated water-filled radiator |
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| Country | Link |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107275291A (en) * | 2017-07-17 | 2017-10-20 | 上海道之科技有限公司 | A kind of water cooling insulated gate bipolar transistor IGBT module |
| CN112993616A (en) * | 2019-12-16 | 2021-06-18 | 株洲中车时代半导体有限公司 | Power module structure |
| CN116314083A (en) * | 2023-05-11 | 2023-06-23 | 深圳市冠禹半导体有限公司 | Trench gate IGBT device structure |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103137576A (en) * | 2011-11-30 | 2013-06-05 | 株式会社日立制作所 | Power semiconductor device |
| US20150008574A1 (en) * | 2012-09-19 | 2015-01-08 | Fuji Electric Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| CN105655306A (en) * | 2016-03-10 | 2016-06-08 | 嘉兴斯达半导体股份有限公司 | Double-side welding and single-side heat radiation power module integrated on heat radiation substrate |
-
2017
- 2017-01-22 CN CN201710046760.XA patent/CN106876343A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103137576A (en) * | 2011-11-30 | 2013-06-05 | 株式会社日立制作所 | Power semiconductor device |
| US20150008574A1 (en) * | 2012-09-19 | 2015-01-08 | Fuji Electric Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| CN105655306A (en) * | 2016-03-10 | 2016-06-08 | 嘉兴斯达半导体股份有限公司 | Double-side welding and single-side heat radiation power module integrated on heat radiation substrate |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107275291A (en) * | 2017-07-17 | 2017-10-20 | 上海道之科技有限公司 | A kind of water cooling insulated gate bipolar transistor IGBT module |
| CN112993616A (en) * | 2019-12-16 | 2021-06-18 | 株洲中车时代半导体有限公司 | Power module structure |
| CN116314083A (en) * | 2023-05-11 | 2023-06-23 | 深圳市冠禹半导体有限公司 | Trench gate IGBT device structure |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170620 |