CN106847959B - 一种四面硅太阳能电池及其制备方法 - Google Patents
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Abstract
本发明公开了一种四面硅太阳能电池，包括基体，该基体为空心四面硅，其由硅制成，形状呈上下开口的矩形体，外表面分别为吸光面；基体的外表面分别设置有正银电极，基体的内表面分别设置有背银电极和铝背场。本发明与现有技术相比，具有如下优点与有益效果：本太阳能电池设置四个或四个以上的吸光面，使其可以从四个或多个面吸收太阳光线，有效增加了太阳光的吸收能量，从而提高电池的光电转换效率。
Description
技术领域
本发明涉及晶硅太阳能电池技术领域，特别涉及一种四面硅太阳能电池及其制备方法。
背景技术
太阳能电池是一种有效地吸收太阳辐射能，利用光生伏打效应把光能转换成电能的器件，当太阳光照在半导体P-N结(P-N Junction)上，形成新的空穴-电子对(V-E pair)，在P-N结电场的作用下，空穴由N区流向P区，电子由P区流向N区，接通电路后就形成电流。由于是利用各种势垒的光生伏特效应将太阳光能转换成电能的固体半导体器件，故又称太阳能电池或光伏电池，是太阳能电池阵电源系统的重要组件。太阳能电池主要有晶硅(Si)电池、三五族半导体电池(GaAs,Cds/Cu2S,Cds/CdTe,Cds/InP,CdTe/Cu2Te)、无机电池、有机电池等，其中晶硅太阳能电池居市场主流主导地位。晶硅太阳能电池的基本材料为纯度达99.9999％、电阻率在10Ω-cm以上的P型单晶硅，包括正面绒面、正面p-n结、正面减反射膜、正背面电极等部分。在组件封装为正面受光照面加透光盖片(如高透玻璃及EVA)保护，防止电池受外层空间范爱伦带内高能电子和质子的辐射损伤。而常规晶硅太阳能电池主要是单面或两面吸收太阳光，吸收的太阳光能量有限，导致转化的发电量不高，因此，有必要做进一步改进。
发明内容
本发明的目的在于克服上述现有技术存在的不足，而提供一种有效提高电池的光电转换效率，且转化的发电量高的四面硅太阳能电池及其制备方法。
为实现上述目的，本发明所提供的技术方案，如下：
一种四面硅太阳能电池，其特征在于：包括基体，该基体为空心四面硅(此外，基体还可以设置四面以上)，其由硅制成，形状呈上下开口的矩形体，外表面分别为吸光面；基体的外表面分别设置有正银电极，基体的内表面分别设置有背银电极和铝背场。
所述基体的外表面设置有若干纵横交错的外表面电极主栅线和外表面电极副栅线；所述基体的内表面设置有若干纵横交错的内表面电极主栅线和内表面电极副栅线；外表面电极主栅线与内表面电极主栅线相互对应，外表面电极副栅线与内表面电极副栅线相互对应。
一种用于制备上述四面硅太阳能电池的制备方法，其特征在于：包括以下步骤：
步骤一：对空心四面硅采用槽式湿法制绒；
步骤二：将空心四面硅放入管式扩散炉进行磷扩散；
步骤三：将空心四面硅放入PECVD管对四个外表面氮化硅膜沉积；
步骤四：采用丝网印刷技术对空心四面硅的内表面进行背银浆料印刷和背场铝浆料印刷，以制得背银电极和铝背场；采用丝网印刷技术对空心四面硅的外表面进行正银浆料印刷，以制得正银电极；
步骤五：对空心四面硅进行烧结；
步骤六：对空心四面硅的正面边缘进行激光隔离。
所述空心四面硅的长度、宽度和高度分别为2-10cm，厚度为1-5mm。
所述空心四面硅为单晶四面硅或多晶四面硅；空心四面硅为单晶四面硅时，将其置入槽式KOH溶液或NAOH溶液里刻蚀，KOH或NAOH的质量百分比浓度分别为20％-50％；空心四面硅为多晶四面硅时，将其置入槽式酸溶液里刻蚀，酸溶液为HNO3和HF的混合酸，HNO3的质量百分比浓度为45％-60％，HF的质量百分比浓度为40％-55％.
步骤二所使用的磷源为三氯氧磷，浓度为200-1000sccm，氧气流量为100-500sccm，氮气流量为5-10slm。
步骤三PECVD镀膜采用的硅烷流量为100-1000sccm，氨气流量为1-5slm。
步骤四背银电极的数量为1-3根，正银电极的数量为1-3根，背银电极和正银电极的数量相等；铝背场距边0.5-1mm。
步骤五中的烧结温度为750-900摄氏度，带速为5000-8000mm/min。
步骤六中的激光波长为1064nm，激光功率为5-50w。
本发明与现有技术相比，具有如下优点与有益效果：本太阳能电池设置四个或四个以上的吸光面，使其可以从四个或多个面吸收太阳光线，有效增加了太阳光的吸收能量，从而提高电池的光电转换效率。
附图说明
图1为本发明一实施例中太阳能电池的立体结构示意图。
图2为本发明一实施例中太阳能电池的俯视图。
图3为本发明一实施例中太阳能电池的制备工艺流程图。
具体实施方式
下面结合具体实施例对本发明作进一步说明。
参见图1和图2，本四面硅太阳能电池，包括基体1，该基体1为空心四面硅，其由硅制成，形状呈上下开口的正方体，外表面分别为吸光面；基体1的外表面分别设置有正银电极，基体1的内表面分别设置有背银电极和铝背场。本太能能电池具有四个吸光面，可以吸收四个方向的太阳光，有效增加了太阳光的吸收能量，从而提高电池的光电转换效率。除此以外，基体1还可以设置四个以上的吸光面，以进一步提高吸光率。
进一步地，所述基体1的外表面设置有若干纵横交错的外表面电极主栅线2和外表面电极副栅线3；所述基体1的内表面设置有若干纵横交错的内表面电极主栅线4和内表面电极副栅线；外表面电极主栅线2与内表面电极主栅线4相互对应，外表面电极副栅线3与内表面电极副栅线相互对应。
参见图3，用于制备上述四面硅太阳能电池的制备方法，包括以下步骤：
步骤一：对空心四面硅采用槽式湿法制绒；
步骤二：将空心四面硅放入管式扩散炉进行磷扩散；
步骤三：将空心四面硅放入PECVD管对四个外表面氮化硅膜沉积；
步骤四：采用丝网印刷技术对空心四面硅的内表面进行背银浆料印
刷和背场铝浆料印刷，以制得背银电极和铝背场；采用丝网印刷技术
对空心四面硅的外表面进行正银浆料印刷，以制得正银电极；
步骤五：对空心四面硅进行烧结；
步骤六：对空心四面硅的正面边缘进行激光隔离。
进一步地，所述空心四面硅的长度、宽度和高度分别为2-10cm，厚度为1-5mm。
进一步地，所述空心四面硅为单晶四面硅或多晶四面硅；空心四面硅为单晶四面硅时，将其置入槽式KOH溶液或NAOH溶液里刻蚀，KOH或NAOH的质量百分比浓度分别为20％-50％；空心四面硅为多晶四面硅时，将其置入槽式酸溶液里刻蚀，酸溶液为HNO3和HF的混合酸，HNO3的质量百分比浓度为45％-60％，HF的质量百分比浓度为40％-55％.
进一步地，步骤二所使用的磷源为三氯氧磷，浓度为200-1000sccm，氧气流量为100-500sccm，氮气流量为5-10slm。
进一步地，步骤三PECVD镀膜采用的硅烷流量为100-1000sccm，氨气流量为1-5slm。
进一步地，步骤四背银电极的数量为1-3根，正银电极的数量为1-3根，背银电极和正银电极的数量相等；铝背场距边0.5-1mm。
进一步地，步骤五中的烧结温度为750-900摄氏度，带速为5000-8000mm/min。
进一步地，步骤六中的激光波长为1064nm，激光功率为5-50w。
以上所述之实施例子只为本发明之较佳实施例，并非以此限制本发明的实施范围，故凡依本发明之形状、原理所作的变化，均应涵盖在本发明的保护范围内。
Claims (9)
1.一种四面硅太阳能电池，包括基体(1)，该基体(1)为空心四面硅，其由硅制成，形状呈上下开口的矩形体，外表面分别为吸光面；基体(1)的外表面分别设置有正银电极，基体(1)的内表面分别设置有背银电极和铝背场；
其特征在于：所述基体(1)的外表面设置有若干纵横交错的外表面电极主栅线(2)和外表面电极副栅线(3)；所述基体(1)的内表面设置有若干纵横交错的内表面电极主栅线(4)和内表面电极副栅线；外表面电极主栅线(2)与内表面电极主栅线(4)相互对应，外表面电极副栅线(3)与内表面电极副栅线相互对应。
2.如权利要求1所述四面硅太阳能电池的制备方法，其特征在于：包括以下步骤：
步骤一：对空心四面硅采用槽式湿法制绒；
步骤二：将空心四面硅放入管式扩散炉进行磷扩散；
步骤三：将空心四面硅放入PECVD管对四个外表面氮化硅膜沉积；
步骤四：采用丝网印刷技术对空心四面硅的内表面进行背银浆料印刷和背场铝浆料印刷，以制得背银电极和铝背场；采用丝网印刷技术对空心四面硅的外表面进行正银浆料印刷，以制得正银电极；
步骤五：对空心四面硅进行烧结；
步骤六：对空心四面硅的正面边缘进行激光隔离。
3.根据权利要求2所述的制备方法，其特征在于：所述空心四面硅的长度、宽度和高度分别为2-10cm，厚度为1-5mm。
4.根据权利要求2所述的制备方法，其特征在于：所述空心四面硅为单晶四面硅或多晶四面硅；空心四面硅为单晶四面硅时，将其置入槽式KOH溶液或NAOH溶液里刻蚀，KOH或NAOH的质量百分比浓度分别为20％-50％；空心四面硅为多晶四面硅时，将其置入槽式酸溶液里刻蚀，酸溶液为HNO3和HF的混合酸，HNO3的质量百分比浓度为45％-60％，HF的质量百分比浓度为40％-55％。
5.根据权利要求2所述的制备方法，其特征在于：步骤二所使用的磷源为三氯氧磷，浓度为200-1000sccm，氧气流量为100-500sccm，氮气流量为5-10slm。
6.根据权利要求2所述的制备方法，其特征在于：步骤三PECVD镀膜采用的硅烷流量为100-1000sccm，氨气流量为1-5slm。
7.根据权利要求2所述的制备方法，其特征在于：步骤四背银电极的数量为1-3根，正银电极的数量为1-3根，背银电极和正银电极的数量相等；铝背场距边0.5-1mm。
8.根据权利要求2所述的制备方法，其特征在于：步骤五中的烧结温度为750-900摄氏度，带速为5000-8000mm/min。
9.根据权利要求2所述的制备方法，其特征在于：步骤六中的激光波长为1064nm，激光功率为5-50w。
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