CN204315591U - 一种选择性发射极晶硅太阳能电池 - Google Patents
一种选择性发射极晶硅太阳能电池 Download PDFInfo
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- CN204315591U CN204315591U CN201420755550.XU CN201420755550U CN204315591U CN 204315591 U CN204315591 U CN 204315591U CN 201420755550 U CN201420755550 U CN 201420755550U CN 204315591 U CN204315591 U CN 204315591U
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN111312863A (zh) * | 2020-04-09 | 2020-06-19 | 江苏润阳悦达光伏科技有限公司 | 一种选择性发射极技术的保护工艺 |
CN112054094A (zh) * | 2020-09-08 | 2020-12-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种太阳能电池及其制作方法 |
CN114203854A (zh) * | 2020-09-02 | 2022-03-18 | 一道新能源科技(衢州)有限公司 | 一种p型晶体硅太阳能电池及其制备方法 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111312863A (zh) * | 2020-04-09 | 2020-06-19 | 江苏润阳悦达光伏科技有限公司 | 一种选择性发射极技术的保护工艺 |
CN114203854A (zh) * | 2020-09-02 | 2022-03-18 | 一道新能源科技(衢州)有限公司 | 一种p型晶体硅太阳能电池及其制备方法 |
CN114203854B (zh) * | 2020-09-02 | 2023-09-29 | 一道新能源科技股份有限公司 | 一种p型晶体硅太阳能电池及其制备方法 |
CN112054094A (zh) * | 2020-09-08 | 2020-12-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种太阳能电池及其制作方法 |
WO2022052534A1 (zh) * | 2020-09-08 | 2022-03-17 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种太阳能电池及其制作方法 |
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Address after: No. 69, C District, Sanshui Industrial Park, Sanshui, Foshan, Guangdong Patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Address before: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69 Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20180223 Address after: 322009 Zhejiang city in Jinhua Province town of Yiwu City, Su Fuk Road No. 126 Co-patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Patentee after: ZHEJIANG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Address before: No. 69, C District, Sanshui Industrial Park, Sanshui, Foshan, Guangdong Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. |
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