CN106847672A - The epitaxy method of high-breakdown-voltage gallium nitride power material - Google Patents
The epitaxy method of high-breakdown-voltage gallium nitride power material Download PDFInfo
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- CN106847672A CN106847672A CN201710122946.9A CN201710122946A CN106847672A CN 106847672 A CN106847672 A CN 106847672A CN 201710122946 A CN201710122946 A CN 201710122946A CN 106847672 A CN106847672 A CN 106847672A
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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Abstract
A kind of epitaxy method of high-breakdown-voltage gallium nitride power material, the epitaxy method includes：Substrate is provided；Cushion is formed in the substrate surface；Ion implanting is carried out to the cushion, makes the interfacial state insulating between the cushion and substrate；Gallium nitride layer is formed in the buffer-layer surface.Above-mentioned epitaxy method can reduce the boundary defect state between the gallium nitride base power device cushion of formation and substrate, reduce leakage current, improve device electric breakdown strength characteristic.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of extension side of high-breakdown-voltage gallium nitride power material
Method.
Background technology
Semiconductor power device is the core technology for controlling electric energy to produce, transmit, change and store.In the world more than 70%
Electric power application by semiconductor power device control, it is widely used in the production and living of modern society, including daily
Consumer electronics product and the power management of large-scale data center, new-energy automobile, high-speed railway, urban track traffic, ship
Promotion, industrial motor driver, intelligent grid and photovoltaic electronics, field of wind power generation.Nowadays the energy has turned into the limitation mankind
The bottleneck factor of social development, thus it is very urgent to the demand of efficient power electronic devices.Especially in big data
Generation and new energy application stage, the application value and range of application of energy-efficient new material technology are more inestimable.
Semiconductor material with wide forbidden band with gallium nitride (GaN) as representative has that energy gap is big, breakdown electric field is high, thermal conductivity
Greatly, electronics saturation drift velocity is high, intrinsic carrier concentration is low, device performance is highly stable under high-temperature operation, radioresistance energy
Power is strong and the superior property such as good chemical stability.These advantages cause GaN base wide band gap semiconductor device high-power, low
The aspects such as loss, high temperature high reliability, miniaturization, Flouride-resistani acid phesphatase have incomparable advantage, are following power electronic industries
Developing direction.GaN base power device is the forward position focus technology greatly developed in the world at present, is also to compel in China's energy development
The core of the vital electrical electronic technology wanted that is essential.
In order to improve gallium nitride base power device performance, with the dislocation density of stress engineering reduction epitaxial material, improve
Crystal mass and high-breakdown-voltage, design and optimization material structure are the main difficult technicals that gallium nitride power material faces.
Although GaN material breakdown voltage value is very high in theory, the high-voltage resistance capability of current GaN device for power switching is far away from reason
By the breakdown voltage value for calculating.There are a large amount of dislocation defects between wherein GaN and substrate interface, to the high pressure of GaN power devices
Breakdown voltage characteristics have important influence.Therefore the electric leakage stream mechanism is directed to, boundary defect state is eliminated, gallium nitride device is improved
The breakdown voltage characteristics of material are highly important.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of extension side of high-breakdown-voltage gallium nitride power material
Method, it is possible to increase the breakdown voltage characteristics of the gallium nitride material of formation.
In order to solve the above problems, the invention provides a kind of epitaxy method of high-breakdown-voltage gallium nitride power material,
Including：Substrate is provided；Cushion is formed in the substrate surface；Ion implanting is carried out to the cushion, makes the cushion
Interfacial state insulating between substrate；Gallium nitride layer is formed in the buffer-layer surface.
Optionally, the material of the cushion includes one or more of aluminium nitride, aluminium gallium nitride alloy or gallium nitride.
Optionally, the cushion is single or multiple lift structure.
Optionally, the thickness of the cushion is 10 nanometers~5 microns.
Optionally, using mocvd process, molecular beam epitaxial process, hydride gas-phase epitaxy work
Skill or atomic layer epitaxy process form the cushion.
Optionally, the element of the ion implanting includes one or more in oxygen, nitrogen, helium, fluorine, boron or argon.
Optionally, the energy range of the ion implanting is 10KeV~1000KeV.
Optionally, the dosage range of the ion implanting is 1 × 1012cm-2~1 × 1019cm-2。
Optionally, outside using the mocvd process, molecular beam epitaxial process, hydrite vapor phase
Prolong technique or atomic layer epitaxy process forms the gallium nitride layer.
Optionally, the material of the substrate is sapphire, carborundum, silicon, zinc oxide, lithium aluminate, aluminium nitride or gallium nitride.
The epitaxy method of gallium nitride material proposed by the present invention carries out interface isolation using ion implantation technique, make substrate and
Interfacial state insulating between cushion, eliminates the boundary defect state between gallium nitride base power device cushion and substrate, subtracts
Small leakage current, improves device electric breakdown strength characteristic, beneficial to the prepare with scale of gallium nitride base power material.
Brief description of the drawings
Fig. 1 shows for the flow of the epitaxy method of the high-breakdown-voltage gallium nitride power material of the embodiment of the invention
It is intended to；
Fig. 2 to Fig. 5 shows for the structure of the forming process of the high-breakdown-voltage gallium nitride power material of one embodiment of the invention
It is intended to.
Specific embodiment
The specific reality of the epitaxy method of the high-breakdown-voltage gallium nitride power material for providing the present invention below in conjunction with the accompanying drawings
The mode of applying elaborates.
Fig. 1 is refer to, is the extension of the high-breakdown-voltage gallium nitride power material of the embodiment of the invention
The schematic flow sheet of method.
Step S101：Substrate is provided.
The material of the substrate can be sapphire, carborundum, silicon, zinc oxide, lithium aluminate, aluminium nitride or gallium nitride etc..
And, it is necessary to fully be cleaned to substrate surface before subsequent technique is carried out.The size of the substrate can be 2 inches, 4
Inch, 6 inches, 8 inches or 12 inches.
Step S102：Cushion is formed in the substrate surface.
The cushion is used to alleviate the stress between follow-up gallium nitride layer to be formed and substrate, what reduction was subsequently formed
The defects such as the dislocation in gallium nitride layer.
The lattice parameter of the cushion generally between substrate and follow-up gallium nitride layer to be formed, the cushion
Both can be single layer structure, or the sandwich construction being made up of different material layer.The material of the cushion includes nitridation
One or more of aluminium, aluminium gallium nitride alloy or gallium nitride.In the specific embodiment of the present invention, from substrate surface to buffering
Layer top, the lattice parameter of the cushion moves closer to the lattice parameter of gallium nitride material so that the crystalline substance in the cushion
Lattice constant gradually changes, to reduce the generation of defect.
In order to play enough stress buffer effects, the thickness of the cushion is 10 nanometers~5 microns.
In specific embodiment of the invention, can use outside mocvd process, molecular beam
Prolong technique, hydride gas-phase epitaxy technique or atomic layer epitaxy process homepitaxy technique and form the cushion.But due to slow
Rushing in layer and substrate interface can also have certain defect, cause interfacial state to exist, and produce interface charge, easily cause leakage current.
Step S103：Ion implanting is carried out to the cushion, the interfacial state between the cushion and substrate is insulated
Change.
By injecting ion, interface charge or defect between adsorption-buffering layer and substrate decline interface state density,
Realize interfacial state insulating.The element of the ion implanting includes one or more in oxygen, nitrogen, helium, fluorine, boron or argon.It is described
Injection ion is located in cushion, partly can also be located near substrate surface.
In order that ion must be injected into the certain depth of cushion and reach the interface of the substrate and cushion, it is necessary to
So that injection ion has certain energy.In a detailed embodiment, the energy range of the ion implanting is 10KeV
~1000KeV.In order to ensure the ion implanting, can by interfacial state insulating, the dosage range of the ion implanting for 1 ×
1012cm-2~1 × 1019cm-2。
Step S104：Gallium nitride layer is formed in the buffer-layer surface.Metal-organic chemical vapor deposition equipment can be used
Technique, molecular beam epitaxial process, hydride gas-phase epitaxy technique or atomic layer epitaxy process form the gallium nitride layer.
By ion implanting so that after the interfacial state insulating between substrate and cushion, then in the cushion table
Face forms gallium nitride layer, can eliminate the boundary defect state between the cushion and substrate of gallium nitride base power device, reduces leakage
Electric current, improves device electric breakdown strength characteristic.And the technique of ion implanting is easily operated, is convenient for large-scale preparation high-breakdown-voltage
Gallium nitride power material.
Fig. 2 to Fig. 5 is refer to, is the embodiment that the present invention forms high-breakdown-voltage gallium nitride power material.
Refer to Fig. 2, there is provided substrate 200, in the embodiment, the substrate 200 is 8 inch silicon wafers, crystal orientation<111>.It is first
Silicon substrate is first carried out into the drying of organic solvent cleaning, hydrofluoric acid burn into deionized water rinsing and nitrogen successively, makes the silicon substrate
Thoroughly clean on surface.
Fig. 3 is refer to, cushion 300 is formed on the surface of the substrate 200.
In the embodiment, the substrate 200 is put into metal-organic chemical vapor deposition equipment reaction cavity, by growth temperature
Degree rises to 1100 DEG C~1150 DEG C, and to being passed through in reaction cavity：Trimethyl aluminium (TMAl), flow is 50 μm of ol/min~180 μ
mol/min；Trimethyl gallium (TMGa), flow is 80 μm of ol/min~220 μm ol/min；N sources be ammonia, flow be 5slm~
50slm；Hydrogen and nitrogen are carrier gas, and flow is 10slm~80slm.
Aln layer, the aluminum gallium nitride that the aluminium component of 100nm is 75%, the aluminium component of 150nm of 150nm are grown successively
It is 50% aluminum gallium nitride and aluminum gallium nitride that the aluminium component of 350nm is 25% to solve, four layers of composition sandwich construction of the above
Cushion 300, wherein, aluminium component is the mol ratio of aluminium, the ratio that can pass through trimethyl aluminium in gas by regulation, adjusts shape
Into aluminum gallium nitride in aluminium component size.With being gradually reduced for aluminium component, lattice parameter in the cushion 300 by
Gradually change, close to the lattice parameter of follow-up gallium nitride to be formed.
Fig. 4 is refer to, ion implanting is carried out to the cushion 300, made between the cushion 300 and substrate 200
Interfacial state insulating.
In the embodiment, the element of ion implanting is nitrogen, and Implantation Energy is 350KeV, and dosage is 1 × 1015cm-2.The work
Skill eliminates the interfacial state between cushion 300 and substrate 200, makes interfacial state insulating, significantly reduces interface leakage current.Should
In embodiment, cushion 300 and the near surface of substrate 200 are filled with nitrogen.
Fig. 5 is refer to, gallium nitride is formed on the surface of the cushion 300 using mocvd process
Layer 400.Reaction chamber growth pressure is 60mbar~600mbar, and growth temperature is 980 DEG C~1050 DEG C, is passed through：Trimethyl gallium,
Flow is 80 μm of ol/min~220 μm ol/min；N sources are ammonia, and flow is 5slm~50slm；Hydrogen and nitrogen are carrier gas, stream
It is 10slm~80slm to measure.
The epitaxy method of above-mentioned gallium nitride material carries out interface isolation using ion implantation technique, make substrate and cushion it
Between interfacial state insulating, eliminate boundary defect between gallium nitride base power device cushion and substrate too, reduce leakage current,
Device electric breakdown strength characteristic is improved, beneficial to the prepare with scale of gallium nitride base power material.
The above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, under the premise without departing from the principles of the invention, can also make some improvements and modifications, and these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (10)
1. a kind of epitaxy method of high-breakdown-voltage gallium nitride power material, it is characterised in that including：
Substrate is provided；
Cushion is formed in the substrate surface；
Ion implanting is carried out to the cushion, makes the interfacial state insulating between the cushion and substrate；
Gallium nitride layer is formed in the buffer-layer surface.
2. the epitaxy method of high-breakdown-voltage gallium nitride power material according to claim 1, it is characterised in that described slow
Rush one or more of the material of layer including aluminium nitride, aluminium gallium nitride alloy or gallium nitride.
3. the epitaxy method of high-breakdown-voltage gallium nitride power material according to claim 1, it is characterised in that described slow
Layer is rushed for single or multiple lift structure.
4. the epitaxy method of high-breakdown-voltage gallium nitride power material according to claim 1, it is characterised in that described slow
The thickness for rushing layer is 10 nanometers~5 microns.
5. the epitaxy method of high-breakdown-voltage gallium nitride power material according to claim 1, it is characterised in that using gold
Category organic chemical vapor deposition technique, molecular beam epitaxial process, hydride gas-phase epitaxy technique or atomic layer epitaxy process shape
Into the cushion.
6. the epitaxy method of high-breakdown-voltage gallium nitride power material according to claim 1, it is characterised in that it is described from
The element of son injection includes one or more in oxygen, nitrogen, helium, fluorine, boron or argon.
7. the epitaxy method of high-breakdown-voltage gallium nitride power material according to claim 1, it is characterised in that it is described from
The energy range of son injection is 10KeV~1000KeV.
8. the epitaxy method of high-breakdown-voltage gallium nitride power material according to claim 1, it is characterised in that it is described from
The dosage range of son injection is 1 × 1012cm-2~1 × 1019cm-2。
9. the epitaxy method of high-breakdown-voltage gallium nitride power material according to claim 1, it is characterised in that use institute
State mocvd process, molecular beam epitaxial process, hydride gas-phase epitaxy technique or atomic layer epitaxy work
Skill forms the gallium nitride layer.
10. the epitaxy method of high-breakdown-voltage gallium nitride power material according to claim 1, it is characterised in that described
The material of substrate is sapphire, carborundum, silicon, zinc oxide, lithium aluminate, aluminium nitride or gallium nitride.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108428619A (en) * | 2018-03-16 | 2018-08-21 | 英诺赛科（珠海）科技有限公司 | Nitride epitaxial layer and preparation method thereof |
| CN111863946A (en) * | 2020-07-31 | 2020-10-30 | 佛山紫熙慧众科技有限公司 | Novel method for repairing defect of heterogeneous interface of nitride heterostructure material |
| WO2021218281A1 (en) * | 2020-04-30 | 2021-11-04 | 西安电子科技大学 | Method for preparing si substrate-aln template and method for preparing si substrate-gan epitaxial structure |
| WO2022061590A1 (en) * | 2020-09-23 | 2022-03-31 | 苏州晶湛半导体有限公司 | Manufacturing method for semiconductor structure |
| US11538681B2 (en) | 2018-09-03 | 2022-12-27 | Globalwafers Co., Ltd. | Epitaxy substrate and method of manufacturing the same |
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