CN104576714A - High-migration-rate GaN-base heterostructure on silicon substrate and preparing method thereof - Google Patents
High-migration-rate GaN-base heterostructure on silicon substrate and preparing method thereof Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 36
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 34
- 239000010703 silicon Substances 0.000 title claims abstract description 34
- 239000000758 substrate Substances 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims abstract description 13
- 230000004888 barrier function Effects 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 17
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 12
- 238000000407 epitaxy Methods 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 229910002601 GaN Inorganic materials 0.000 claims description 84
- 238000001746 injection moulding Methods 0.000 claims description 23
- 239000000843 powder Substances 0.000 claims description 23
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 22
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 21
- 229910052738 indium Inorganic materials 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 11
- 239000000470 constituent Substances 0.000 claims description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- IWBUYGUPYWKAMK-UHFFFAOYSA-N [AlH3].[N] Chemical compound [AlH3].[N] IWBUYGUPYWKAMK-UHFFFAOYSA-N 0.000 claims description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 229910017083 AlN Inorganic materials 0.000 claims description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 5
- 150000004678 hydrides Chemical class 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 2
- 230000006911 nucleation Effects 0.000 claims description 2
- 238000010899 nucleation Methods 0.000 claims description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 2
- 239000012071 phase Substances 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 11
- 238000005516 engineering process Methods 0.000 abstract description 9
- 238000003780 insertion Methods 0.000 abstract 1
- 230000037431 insertion Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 94
- 230000005533 two-dimensional electron gas Effects 0.000 description 14
- 230000000694 effects Effects 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000033228 biological regulation Effects 0.000 description 3
- 125000005842 heteroatom Chemical group 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000012876 topography Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002471 indium Chemical class 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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Abstract
The invention provides a high-migration-rate GaN-base heterostructure on a silicon substrate and a preparing method of the heterostructure, and belongs to the technical field of semiconductors. The GaN-base heterostructure is a layered stacked structure and sequentially comprises the silicon substrate, a nucleating layer, a stress and defect control layer, an epitaxial layer, a channel layer, an insertion layer and a barrier layer from bottom to top, wherein the stress and defect control layer is an AlGaN layer, the thickness of the AlGaN layer is 10 nanometers-10 micrometers, and the mole component of Al is 1-26%. Compared with an existing tedious epitaxy technology of a GaN-base heterostructure on a silicon substrate, the defect density can be substantially reduced, the crystalline quality of a heterostructure material is improved, and the high-migration-rate GaN-base heterostructure is suitable for developing high-frequency and high-power devices low in cost.
Description
Technical field
The invention belongs to technical field of semiconductors, particularly relate to high mobility GaN base heterostructure and preparation method thereof on a kind of silicon (Si) substrate.
Background technology
Be that the third generation semiconductor of representative has the excellent character such as high energy gap, high breakdown electric field, high saturated electron drift velocity and strong polarization with group III-nitride, high mobility transistor (HEMT) particularly based on AlGaN/GaN heterostructure has the excellent specific properties such as switching speed is fast, conducting resistance is low, device volume is little, high temperature resistant, energy-conservation, is expected to be used widely in highly efficient power field of electronic devices of future generation.
In the GaN base heterogeneous structure material being backing material with sapphire, carborundum, silicon, Si upper GaN base heterogeneous structure material and device because of its large scale, low cost and with existing Si process compatible etc. in there is obvious advantage, have wide practical use in the field such as power converter of solar inverter, hybrid vehicle inverter, power power-supply, household electrical appliance and industrial equipment, also therefore become one of focus of nitride arena research in the world.
Two-dimensional electron gas mobility and concentration are two the most important indexs characterizing GaN base heterogeneous structure material quality, have important function for the output current density and power density improving device.And the scattering mechanism affecting two-dimensional electron gas mobility mainly contains interface roughness scattering, dislocation scattering, alloy disorder scattering and phon scattering etc.For GaN base heterogeneous structure material on Si substrate, owing to there is larger lattice mismatch, containing a large amount of defects in the material extended outward, these defects greatly limit the raising of two-dimensional electron gas performance, have had a strong impact on the reliability of device simultaneously.On the other hand, due to thermal mismatching, after high growth temperature GaN base material, in the process of cooling, GaN base epitaxial material can be subject to the huge tensile stress that Si substrate applies, and causes the strong warpage of epitaxial material even to chap, is difficult to the requirement meeting technique.Therefore, how by stress and defect project, avoiding the be full of cracks of epitaxial material, and obtain the GaN base Heterostructure Epitaxial Materials of fabricating low-defect-density, is that on development Si, GaN base power electronic device needs the matter of utmost importance solved.In order to realize stress and the powder injection molding of GaN heterogeneous structure material on Si in prior art, that improves two-dimensional electron gas transports performance, usually takes following three kinds of methods in the world:
(1) low-temperature AlN interlayer technology, as [1] A.Dadgar et al., Jpn.J.Appl.Phys.39 L1183 (2000).This technological merit to realize thicker GaN base epitaxial loayer, but be also affected due to the poor quality of GaN base epitaxial loayer that makes of crystal mass of low temperature AI N layer, is not very desirable in the mobility improving two-dimensional electron gas.In MOCVD epitaxy, need intensification repeatedly and cooling simultaneously, considerably increase the complexity of epitaxy technique.
(2) AlN/GaN superlattice technology, as [2] E.Feltin et al., Phys.Status Solidi (a) 188 531 (2001).This technology can reduce dislocation density to a certain extent, improves crystal mass, but have certain difficulty in the preparation of thick film GaN, and the cycle is long simultaneously, adds extension cost.
(3) Al composition gradient gradual change AlGaN technology (mostly being from high Al contents gradient to low Al component), as [3] K.Chenget al.J.Electron.Mater.25,4 (2006).This technology is in the middle of two technology above, but relate to repeatedly the growth of (more than three times) ternary alloy three-partalloy AlGaN, because Al component is more responsive by the impact of MOCVD reative cell as temperature, epitaxial step is more, and the repeatability and stability of Stress Control are also subject to certain challenge.
Summary of the invention
The object of the invention is to overcome the complexity of the technical deficiency of GaN base hetero structure epitaxy and technique on existing Si, provide high mobility GaN base heterostructure on a kind of Si, namely utilize the low Al component AlGaN of individual layer as stress and powder injection molding layer, prepare high mobility GaN base heterogeneous structure material on Si.
To achieve these goals, technical scheme is as follows: high mobility GaN base heterostructure on a kind of Si, comprises: silicon substrate from the bottom to top successively; Nucleating layer; This nucleating layer on silicon substrate, stress and powder injection molding layer; This stress and powder injection molding layer on nucleating layer, epitaxial loayer; This epitaxial loayer on stress and powder injection molding layer, channel layer; This channel layer on epitaxial loayer, insert layer; This insert layer on channel layer, barrier layer; This barrier layer is on insert layer, and wherein stress and powder injection molding layer are AlGaN layer, and its thickness is 10nm-10 μm, and Al molar constituent is 1-26%.
The present invention also provides a kind of preparation method of high mobility GaN base heterostructure, adopt the method effectively can overcome the technical complexity of GaN base hetero structure epitaxy on existing Si substrate, epitaxy technique is simple and effective and rapid, stability is high, heterostructure crystal mass can be increased substantially simultaneously, improve the transport property of two-dimensional electron gas, comprise the steps:
(1) Si substrate is selected;
(2) one deck aluminum gallium nitride or aln nucleation layer is grown on a si substrate;
(3) growth stress and powder injection molding layer on nucleating layer, this stress and powder injection molding layer are AlGaN layer, and its thickness is 10nm-10 μm, and Al molar constituent is 1-26%;
(4) growing gallium nitride or aluminum gallium nitride epitaxial loayer on stress and powder injection molding layer;
(5) growing gallium nitride or indium gallium nitrogen channel layer on epitaxial loayer;
(6) growing aluminum nitride insert layer on channel layer;
(7) in insert layer, grow aluminum gallium nitride barrier layer or indium aluminium nitrogen barrier layer, thus prepare GaN base heterostructure on a si substrate.
Preferably, the growing method of described nucleating layer, stress and powder injection molding layer, epitaxial loayer, channel layer, insert layer and barrier layer is Metal Organic Vapor extension (MOCVD), molecular beam epitaxy (MBE), the one in hydride gas-phase epitaxy (HVPE) and vapour phase epitaxy (CVD).
The present invention adopts unique low al composition aluminum gallium nitride of individual layer as stress and powder injection molding layer, further by accurately controlling growth conditions, as temperature, pressure, V/III etc., the defect concentration in GaN epitaxial layer can be effectively reduced, improve the mobility of the crystal mass of heterogeneous structure material, particularly two-dimensional electron gas.Shown in figure 2, X-ray diffraction (XRD) plane of symmetry (002) of GaN epitaxial layer adopting the present invention to prepare and the halfwidth (FWHM) of asymmetric (102) swing curve are respectively 389arcsec and 527arcsec; Two-dimensional electron gas (2DEG) mobility [mu]=2030cm under the AlGaN/GaN heterostructure room temperature of extension on this basis
2/ V.s, carrier concentration n=8.4E12/cm
2.
Compared with GaN base hetero structure epitaxy technology on existing more loaded down with trivial details Si, the present invention using low for individual layer al composition aluminum gallium nitride as stress and powder injection molding layer, not only preparation method is simple, and significantly can reduce defect concentration, improve the crystal mass of heterogeneous structure material, be extremely suitable for the high frequency of low cost, the development of high-power component.
Accompanying drawing explanation
Fig. 1 is high mobility GaN base heterostructure schematic diagram on silicon of the present invention;
Fig. 2 is X-ray diffraction (XRD) figure of the GaN epitaxial layer adopting the present invention to prepare; Wherein (a) the XRD plane of symmetry (002) swing curve that is GaN epitaxial layer; B XRD that () is GaN epitaxial layer asymmetric (102) swing curve.
Embodiment
Shown in figure 1, the invention provides high mobility GaN base heterostructure on a kind of silicon, comprise successively from the bottom to top: monocrystalline substrate 1; Nucleating layer 2; Stress and powder injection molding layer 3; Epitaxial layer of gallium nitride 4; Gallium nitride channel layer 5; Aln inserting layer 6; Aluminum gallium nitride barrier layer or indium aluminium nitrogen barrier layer 7.
Embodiment 1
(1) select a kind of monocrystalline substrate 1, the crystal orientation of silicon comprises silicon (111), silicon (100), silicon (110) etc.;
(2) in single crystalline substrate, grow aluminum gallium nitride as nucleating layer 2, growth temperature is 900-1200 DEG C, and growth pressure is 10-200mbar, and growth thickness is 10nm-2 μm;
(3) at nucleating layer 2 Epitaxial growth aluminum gallium nitride as stress and powder injection molding layer 3, growth temperature is 900-1200 DEG C, and growth pressure is 10-200mbar, and growth thickness is 10nm-10 μm, the molar constituent of aluminium is 1%, and this layer plays regulation and control stress and suppress the effect of defect;
(4) growing gallium nitride epitaxial loayer 4 on stress and powder injection molding layer 3, growth temperature is 900-1100 DEG C, and growth pressure is 10-200mbar, and thickness is 10nm-20 μm, and epitaxial layer of gallium nitride plays the effect improving crystal mass and surface topography;
(5) growing gallium nitride channel layer 5 on epitaxial layer of gallium nitride 4, growth temperature is 900-1200 DEG C, and growth pressure is 10-200mbar, and thickness is 2nm-1.0 μm, for two-dimensional electron gas provides a good transfer passages;
(6) growing aluminum nitride insert layer 6 on gallium nitride channel layer 5, reduce alloy disorder scattering, growth temperature is 900-1200 DEG C, and growth pressure is 10-200mbar, and thickness is 0.5nm-3.0nm;
(7) on aln inserting layer 6, aluminum gallium nitride barrier layer 7 is grown, growth temperature is 750-1200 DEG C, growth pressure is 10-200mbar, thickness is 3nm-50nm, form semiconductor heterostructure with the gallium nitride channel layer 5 below it together with aln inserting layer 6, form the two-dimensional electron gas with high migrate attribute of high concentration in its interface.
Embodiment 2
(1) select a kind of monocrystalline substrate 1, the crystal orientation of silicon comprises silicon (111), silicon (100);
(2) in single crystalline substrate, growing aluminum nitride is as nucleating layer 2, and growth temperature is 900-1200 DEG C, and growth pressure is 10-200mbar, and growth thickness is 10nm-2 μm;
(3) at nucleating layer 2 Epitaxial growth aluminum gallium nitride as stress and powder injection molding layer 3, growth temperature is 900-1200 DEG C, and growth pressure is 10-200mbar, and growth thickness is 10nm-10 μm, the molar constituent of aluminium is 15%, and this layer plays regulation and control stress and suppress the effect of defect;
(4) on stress and powder injection molding layer 3, aluminum gallium nitride epitaxial loayer 4 is grown, the molar constituent of the aluminium of this aluminum gallium nitride epitaxial loayer 4 is 0.01-15%, growth temperature is 900-1100 DEG C, growth pressure is 10-200mbar, thickness is 10nm-20 μm, and aluminum gallium nitride epitaxial loayer plays the effect improving crystal mass and surface topography;
(5) growing gallium nitride channel layer 5 on aluminum gallium nitride epitaxial loayer 4, growth temperature is 900-1200 DEG C, and growth pressure is 10-200mbar, and thickness is 2nm-1.0 μm, for two-dimensional electron gas provides a good transfer passages;
(6) growing aluminum nitride insert layer 6 on gallium nitride channel layer 5, reduce alloy disorder scattering, growth temperature is 900-1200 DEG C, and growth pressure is 10-200mbar, and thickness is 0.5nm-3.0nm;
(7) on aln inserting layer 6, grow indium aluminium nitrogen barrier layer 7, growth temperature is 750-1200 DEG C, growth pressure is 10-200mbar, thickness is 3nm-50nm, form semiconductor heterostructure with the gallium nitride channel layer 5 below it together with aln inserting layer 6, form the two-dimensional electron gas with high migrate attribute of high concentration in its interface.
Embodiment 3
(1) a kind of monocrystalline substrate 1 is selected;
(2) in single crystalline substrate, grow aluminum gallium nitride or aluminium nitride as nucleating layer 2, growth temperature is 900-1200 DEG C, and growth pressure is 10-200mbar, and growth thickness is 10nm-2 μm;
(3) at nucleating layer 2 Epitaxial growth aluminum gallium nitride as stress and powder injection molding layer 3, growth temperature is 900-1200 DEG C, and growth pressure is 10-200mbar, and growth thickness is 10nm-10 μm, the molar constituent of aluminium is 23.4%, and this layer plays regulation and control stress and suppress the effect of defect;
(4) growing gallium nitride epitaxial loayer 4 on stress and powder injection molding layer 3, growth temperature is 900-1100 DEG C, and growth pressure is 10-200mbar, and thickness is 10nm-20 μm, and epitaxial layer of gallium nitride plays the effect improving crystal mass and surface topography;
(5) on epitaxial layer of gallium nitride 4, grow indium gallium nitrogen channel layer 5, the molar constituent of the indium of this indium gallium nitrogen channel layer is 0.01-100%, growth temperature is 600-1200 DEG C, growth pressure is 10-1000mbar, thickness is 2nm-1.0 μm, for two-dimensional electron gas provides a good transfer passages;
(6) growing aluminum nitride insert layer 6 on indium gallium nitrogen channel layer 5, reduce alloy disorder scattering, growth temperature is 900-1200 DEG C, and growth pressure is 10-200mbar, and thickness is 0.5nm-3.0nm;
(7) on aln inserting layer 6, grow aluminum gallium nitride barrier layer or indium aluminium nitrogen barrier layer 7, growth temperature is 750-1200 DEG C, growth pressure is 10-200mbar, thickness is 3nm-50nm, form semiconductor heterostructure with the gallium nitride channel layer 5 below it together with aln inserting layer 6, form the two-dimensional electron gas with high migrate attribute of high concentration in its interface.
Above-described embodiment is only and technological thought of the present invention and feature is described, it describes comparatively concrete and detailed, its object is to enable those of ordinary skill in the art understand content of the present invention and implement according to this, therefore only the scope of the claims of the present invention can not be limited with this, but therefore limitation of the scope of the invention can not be interpreted as.It should be noted that, for the person of ordinary skill of the art, without departing from the inventive concept of the premise, some distortion and improvement can also be made, namely all changes done according to disclosed spirit, must be encompassed in the scope of the claims of the present invention.
Claims (8)
1. high mobility GaN base heterostructure on a silicon substrate, this structure is stratiform overlaying structure, material is from bottom to top followed successively by: silicon substrate, nucleating layer, stress and powder injection molding layer, epitaxial loayer, channel layer, insert layer and barrier layer, described channel layer, insert layer form semiconductor heterostructure together with barrier layer, it is characterized in that, stress and powder injection molding layer are AlGaN layer, and its thickness is 10nm-10 μm; And Al molar constituent is 1-26%.
2. high mobility GaN base heterostructure on silicon substrate as claimed in claim 1, it is characterized in that, described silicon substrate is conductive silicon substrate or semi-insulating silicon substrate, and the crystal orientation of silicon comprises silicon (111), silicon (100), silicon (110).
3. high mobility GaN base heterostructure on silicon substrate as claimed in claim 1, it is characterized in that, described nucleating layer is AlGaN layer or AlN layer, and its thickness range is 10nm-2 μm.
4. high mobility GaN base heterostructure on silicon substrate as claimed in claim 1, it is characterized in that, described epitaxial loayer is gallium nitride or aluminum gallium nitride, and its thickness range is 10nm-20 μm.
5. high mobility GaN base heterostructure on silicon substrate as claimed in claim 1, it is characterized in that, described channel layer is gallium nitride or indium gallium nitrogen, and its thickness range is 2nm-1.0 μm.
6. high mobility GaN base heterostructure on silicon substrate as claimed in claim 1, it is characterized in that, described insert layer is aluminium nitride, and its thickness range is 0.5nm-3.0nm.
7. high mobility GaN base heterostructure on silicon substrate as claimed in claim 1, it is characterized in that, described barrier layer is aluminum gallium nitride or indium aluminium nitrogen, and its thickness range is 3nm-50nm.
8. prepare the method for high mobility GaN base heterostructure on silicon substrate as claimed in claim 1 for one kind, it is characterized in that, adopt in Metal Organic Vapor extension, molecular beam epitaxy, hydride gas-phase epitaxy or vapor phase epitaxy method one or more, grow one deck aluminum gallium nitride or aln nucleation layer on a si substrate; AlGaN stress and powder injection molding layer is grown subsequently on nucleating layer; Then growing gallium nitride or aluminum gallium nitride epitaxial loayer on stress and powder injection molding layer; Growing gallium nitride or indium gallium nitrogen channel layer on epitaxial loayer again; Then growing aluminum nitride insert layer on channel layer; Finally on aln inserting layer, grow aluminum gallium nitride barrier layer or indium aluminium nitrogen barrier layer, thus prepare GaN base heterostructure on a si substrate.
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| CN108550518A (en) * | 2018-05-10 | 2018-09-18 | 南京大学 | The method of the superlattices insert layer for alleviating/eliminating aluminum gallium nitride film surface crackle is grown using molecular beam epitaxy technique |
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| CN113725330A (en) * | 2021-08-10 | 2021-11-30 | 广州市众拓光电科技有限公司 | Silicon-based LED epitaxial structure and preparation method and application thereof |
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| CN113725330A (en) * | 2021-08-10 | 2021-11-30 | 广州市众拓光电科技有限公司 | Silicon-based LED epitaxial structure and preparation method and application thereof |
| CN118016710A (en) * | 2024-04-10 | 2024-05-10 | 英诺赛科（珠海）科技有限公司 | GaN HEMT device and manufacturing method thereof |
| CN118016710B (en) * | 2024-04-10 | 2024-07-02 | 英诺赛科（珠海）科技有限公司 | GaN HEMT device and manufacturing method thereof |
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