CN104752162A - Semi-insulated GaN film and preparation method thereof - Google Patents
Semi-insulated GaN film and preparation method thereof Download PDFInfo
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- CN104752162A CN104752162A CN201410057141.7A CN201410057141A CN104752162A CN 104752162 A CN104752162 A CN 104752162A CN 201410057141 A CN201410057141 A CN 201410057141A CN 104752162 A CN104752162 A CN 104752162A
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- gallium nitride
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Abstract
The invention provides a semi-insulated GaN film and a preparation method thereof. The method comprises the steps of preparing a substrate; developing a buffering layer on the substrate by the metal organic chemical vapor deposition method; developing a gallium nitride die plate on the buffering layer; developing a carbon-doped semi-insulated gallium nitride film layer on the gallium nitride die plate. The semi-insulated gallium nitride prepared by the method is high in quality, high in purity, small in impurity memory effect, and high in insulating performance, and can effectively reduce current leakage.
Description
Technical field
The invention belongs to technical field of semiconductors, be specifically related to a kind of semi-insulating GaN film and preparation method thereof.
Background technology
GaN has the larger feature such as direct band gap (3.4ev), high heat conductance, high electronics saturation drift velocity, has therefore become the study hotspot of current technical field of semiconductors.Especially, gallium nitride based high electron mobility field-effect transistor (HEMT) is a kind of Novel electronic devices based on nitride heterojunction structure.This device has high frequency, powerful excellent specific property, is widely used in the fields such as the information transmit-receive such as radio communication base station, power electronic device, power conversion.
Because AlGaN/GaN heterostructure puncture voltage is large, because polarization can produce high concentration two-dimensional electron gas (2DEG), and there is very high electron mobility, therefore attract wide attention in microwave power device application aspect.If the isolation voltage between the substrate of gallium nitride transistor sometimes and active device is more than 300V, now a high resistant GaN layer is as separator, gallium nitride transistor and bottom is made to insulate like this, this method can produce multiple transistor devices of any structure with single chip mode, and inherently there is the cooling mechanism of efficient general, insulating barrier is not needed between device and radiator, also reduce leakage current simultaneously, improve power density and high temperature, the high frequency performance of AlGaN/GaN HEMT device.Therefore in device material structure, epitaxial growth high resistant GaN layer is very necessary.
GaN film generally presents N-shaped conduction type, and the nitrogen vacancy defect that in the lattice of monocrystal thin films, easy self-assembling formation is a large amount of also produces higher Electronic concentration in conjunction with other shallow donor impurity.Several author discloses and adds the dark counter dopant of transition metal such as Mn, Fe, Co, Ni, Cu etc. to compensate the donor substance in gallium nitride, and gives the semi-insulating characteristic of gallium nitride.Such as, Monemar and Lagerstedt [J.Appl.Phys.50,6480 (1979)] adds Fe or Cr to GaN by hydride gas phase epitaxial growth and obtains high resistance crystal.Fe is introduced the GaN film grown by metal organic chemical vapor deposition by the people such as Heikman [Appl.Phys.Lea.81,439 (2002)], and obtains semi-insulating characteristic similarly.But because transition metal has very strong scattering process, so the migration rate of electronics in HEMT device channel layer can be reduced.
In addition, disclosed a kind of method manufacturing high resistance GaN bulk crystal, the nitrogen-atoms of described method under the high temperature of the high pressure of about 0.5-2.0GPa and 1300-1700 degree Celsius in gallium and II race's metal nitride carries out crystallization.Obtain 10
4-10
8the GaN crystal of ohm-cm resistance.
Carbon, as a kind of P-type dopant, also has other P-type dopant and cannot reach a little: the diffusion coefficient that (1) is minimum; (2) lower ionization energy; (3) less impurity memory effect.Carbon is as amphoteric impurity simultaneously, and the doping in gallium nitride has self-compensation mechanism, and its compensativity has material impact to carrier concentration.
Summary of the invention
An object of the present invention is to provide a kind of preparation method of semi-insulating GaN film, the method is simple to operate, cost is low, operating efficiency is high, and effectively can control the resistance of semi-insulating gallium nitride.
In order to realize foregoing invention object, the present invention is by the following technical solutions: a kind of preparation method of semi-insulating GaN film, comprise preparation one substrate, adopt the method for metal organic chemical vapor deposition at Grown one resilient coating, grow a gallium nitride template on the buffer layer, gallium nitride template grows the semi-insulating gallium nitride film layer of a carbon doping.
Preferably, the thickness of described gallium nitride template is 0.5 μm-3 μm.
Preferably, the dopant of described carbon doping comprises the one in following dopant: carbon tetrachloride, carbon tetrabromide.
Preferably, in described semi-insulating gallium nitride film layer, the concentration of carbon is 1 × 10
16cm
-3-1 × 10
20cm
-3.
Preferably, in described semi-insulating gallium nitride film layer, the concentration of carbon is 1 × 10
18cm
-3.
Preferably, the growth temperature of described semi-insulating gallium nitride film layer is 1000 DEG C-1200 DEG C, and the pressure of growth room is 30torr-760torr.
Beneficial effect of the present invention: method of operation of the present invention is simple, cost is low, operating efficiency is high, the semi-insulating gallium nitride quality prepared by the method is high, purity is high, and the memory effect of impurity is little, good insulation preformance, effectively can reduce leakage current.
Another object of the present invention is to provide a kind of semi-insulating GaN film, and this semi-insulating gallium nitride quality is high, purity is high, little to the memory effect of impurity, good insulation preformance, and effectively can reduce leakage current.
In order to realize foregoing invention object, the present invention is by the following technical solutions: a kind of semi-insulating GaN film, this semi-insulating GaN film comprises substrate, resilient coating, gallium nitride template, gallium nitride film layer from bottom to up successively, and described gallium nitride film layer is the semi-insulating gallium nitride film layer of carbon doping.
Preferably, the dopant of described carbon doping comprises but one in following dopant: carbon tetrachloride, carbon tetrabromide.
Preferably, in described semi-insulating gallium nitride film layer, the concentration of carbon is 1 × 10
16cm
-3-1 × 10
20cm
-3.
Preferably, in described semi-insulating gallium nitride film layer, the concentration of carbon is 1 × 10
18cm
-3.
Beneficial effect of the present invention: the memory effect of this semi-insulating GaN film provided by the invention to impurity is little, good insulation preformance, and effectively can reduce leakage current.
Accompanying drawing explanation
Fig. 1 is a semi-insulating gallium nitride layer growth structure schematic diagram of the present invention;
Fig. 2 is High Electron Mobility Transistor epitaxial material structure schematic diagram prepared by the present invention.
Embodiment
In order to make technical problem solved by the invention, technical scheme and beneficial effect clearly understand, below in conjunction with embodiment, the present invention is described in further detail.
Embodiment 1
As shown in Figure 1, the invention provides a kind of preparation method of semi-insulating GaN film, comprise the following steps: first, the Sapphire Substrate 101 in (0001) crystal orientation is put into MOCVD reative cell; Then at H
2be warming up to 1180 DEG C in environment and carry out high-temperature process substrate 10min; Be cooled to 550 DEG C, under 600mbar, grow the GaN resilient coating 102 that 25nm is thick; Be warming up to the undoped GaN template 103 that 1150 DEG C of growth 2um are thick; Finally under 1150 DEG C and 50torr, pass into carbon tetrachloride impurity gas, growing a concentration of carbon is 1 × 10
18cm
-3the thick semi-insulating gallium nitride film layer 104 of 3um; Be cooled to room temperature, growth terminates.
Embodiment 2
As shown in Figure 2, the High Electron Mobility Transistor epitaxial material structure schematic diagram prepared of the present invention.First, silicon substrate 201 is put into the growth room of MOCVD system; Then at H
2be warming up to 1180 DEG C in environment and carry out high-temperature process substrate 10min; Be cooled to 1060 DEG C, pass into trimethyl aluminium process 20 seconds, form Al layer 202 in surface of silicon; Pass into the AlN layer 203 of ammonia and trimethyl aluminium growth 100nm; Pass into ammonia, trimethyl aluminium and trimethyl gallium, the AlGaN layer 204 that growth 0.5um is thick; Close trimethyl aluminium, be warming up to the undoped GaN template 205 that 1150 DEG C of growth 1.0um are thick; Under 1150 DEG C and 600torr, pass into carbon tetrabromide impurity gas, growing a concentration of carbon is 1 × 10
18cm
-3the thick semi-insulating GaN thin layer 206 of 2um; Close carbon tetrabromide, the thick GaN channel layer 207 of growth 1.0um; Open trimethyl aluminium, at 1100 DEG C, grow the thick AlGaN potential barrier 208 of 30nm; Closedown is cooled to room temperature, and growth terminates.
The above; be only the embodiment in the present invention; but protection scope of the present invention is not limited thereto, any people being familiar with this technology is in the technical scope disclosed by the present invention, and the conversion that can expect easily or replace all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of claims.
Claims (10)
1. the preparation method of a semi-insulating GaN film, comprise preparing substrate, adopt the method for metal organic chemical vapor deposition at Grown resilient coating, growing gallium nitride template on the buffer layer, gallium nitride film growth layer on gallium nitride template, is characterized in that described gallium nitride film layer is the semi-insulating gallium nitride film layer of carbon doping.
2. the preparation method of a kind of semi-insulating GaN film according to claim 1, is characterized in that the thickness of described gallium nitride template is 0.5 μm-3 μm.
3. the preparation method of a kind of semi-insulating GaN film according to claim 1, is characterized in that the dopant of described carbon doping comprises the one in following dopant: carbon tetrachloride, carbon tetrabromide.
4. the preparation method of a kind of semi-insulating GaN film according to claim 1, is characterized in that the concentration of carbon in described semi-insulating gallium nitride film layer is 1 × 10
16cm
-3-1 × 10
20cm
-3.
5. the preparation method of a kind of semi-insulating GaN film according to claim 1, is characterized in that the concentration of carbon in described semi-insulating gallium nitride film layer is 1 × 10
18cm
-3.
6. the preparation method of a kind of semi-insulating GaN film according to claim 1, it is characterized in that the growth temperature of described semi-insulating gallium nitride film layer is 1000 DEG C-1200 DEG C, the pressure of growth room is 30torr-760torr.
7. a semi-insulating GaN film, this semi-insulating GaN film comprises substrate, resilient coating, gallium nitride template, gallium nitride film layer from bottom to up successively, it is characterized in that described gallium nitride film layer is the semi-insulating gallium nitride film layer of carbon doping.
8. a kind of semi-insulating GaN film according to claim 7, is characterized in that the dopant of described carbon doping comprises the one in following dopant: carbon tetrachloride, carbon tetrabromide.
9. a kind of semi-insulating GaN film according to claim 7, is characterized in that the concentration of carbon in described semi-insulating gallium nitride layer thin layer is 1 × 10
16cm
-3-1 × 10
20cm
-3.
10. a kind of semi-insulating GaN film according to claim 7, is characterized in that the concentration of carbon in described semi-insulating gallium nitride film layer is 1 × 10
18cm
-3.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107546260A (en) * | 2016-06-29 | 2018-01-05 | 江西省昌大光电科技有限公司 | A kind of semi-insulating GaN film and preparation method thereof |
| CN107546207A (en) * | 2016-06-29 | 2018-01-05 | 江西省昌大光电科技有限公司 | A kind of GaN base electronic device and preparation method thereof |
| CN107546261A (en) * | 2016-06-29 | 2018-01-05 | 江西省昌大光电科技有限公司 | Semi-insulating GaN film and high electronic migration rate transmistor epitaxial structure |
| CN111009467A (en) * | 2019-12-06 | 2020-04-14 | 华南理工大学 | GaN rectifier based on Cu substrate base and preparation method thereof |
| CN111962018A (en) * | 2019-09-20 | 2020-11-20 | 深圳市晶相技术有限公司 | Semiconductor epitaxial structure and application and manufacturing method thereof |
| CN112820632A (en) * | 2021-01-14 | 2021-05-18 | 镓特半导体科技（上海）有限公司 | Semiconductor structure, self-supporting gallium nitride layer and preparation method thereof |
| CN112928162A (en) * | 2021-01-14 | 2021-06-08 | 华灿光电（浙江）有限公司 | High electron mobility transistor epitaxial wafer and preparation method thereof |
| CN114497185A (en) * | 2021-12-29 | 2022-05-13 | 深圳大学 | Preparation method of carbon-doped insulating layer, HEMT device and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200518198A (en) * | 2003-11-28 | 2005-06-01 | Epivalley Co Ltd | Method for fabricating GaN-based nitride layer |
| CN1943035A (en) * | 2004-04-30 | 2007-04-04 | 古河电气工业株式会社 | Gan semiconductor device |
| CN101128911A (en) * | 2005-02-28 | 2008-02-20 | 爱普斯碧德股份有限公司 | System and process for high-density, low-energy plasma enhanced vapor phase epitaxy |
| US20090059983A1 (en) * | 2004-06-08 | 2009-03-05 | Matsushita Electric Industrial Co., Ltd. | Nitride semiconductor light-emitting device |
| CN103180935A (en) * | 2011-03-22 | 2013-06-26 | 住友电气工业株式会社 | Compound gan substrate and method for producing same, and group iii nitride semiconductor device and method for producing same |
-
2014
- 2014-02-20 CN CN201410057141.7A patent/CN104752162A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200518198A (en) * | 2003-11-28 | 2005-06-01 | Epivalley Co Ltd | Method for fabricating GaN-based nitride layer |
| CN1943035A (en) * | 2004-04-30 | 2007-04-04 | 古河电气工业株式会社 | Gan semiconductor device |
| US20090059983A1 (en) * | 2004-06-08 | 2009-03-05 | Matsushita Electric Industrial Co., Ltd. | Nitride semiconductor light-emitting device |
| CN101128911A (en) * | 2005-02-28 | 2008-02-20 | 爱普斯碧德股份有限公司 | System and process for high-density, low-energy plasma enhanced vapor phase epitaxy |
| CN103180935A (en) * | 2011-03-22 | 2013-06-26 | 住友电气工业株式会社 | Compound gan substrate and method for producing same, and group iii nitride semiconductor device and method for producing same |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107546260A (en) * | 2016-06-29 | 2018-01-05 | 江西省昌大光电科技有限公司 | A kind of semi-insulating GaN film and preparation method thereof |
| CN107546207A (en) * | 2016-06-29 | 2018-01-05 | 江西省昌大光电科技有限公司 | A kind of GaN base electronic device and preparation method thereof |
| CN107546261A (en) * | 2016-06-29 | 2018-01-05 | 江西省昌大光电科技有限公司 | Semi-insulating GaN film and high electronic migration rate transmistor epitaxial structure |
| CN111962018A (en) * | 2019-09-20 | 2020-11-20 | 深圳市晶相技术有限公司 | Semiconductor epitaxial structure and application and manufacturing method thereof |
| CN113224140A (en) * | 2019-09-20 | 2021-08-06 | 深圳市晶相技术有限公司 | Film growth method on semiconductor substrate and application thereof |
| CN111009467A (en) * | 2019-12-06 | 2020-04-14 | 华南理工大学 | GaN rectifier based on Cu substrate base and preparation method thereof |
| CN112820632A (en) * | 2021-01-14 | 2021-05-18 | 镓特半导体科技（上海）有限公司 | Semiconductor structure, self-supporting gallium nitride layer and preparation method thereof |
| CN112928162A (en) * | 2021-01-14 | 2021-06-08 | 华灿光电（浙江）有限公司 | High electron mobility transistor epitaxial wafer and preparation method thereof |
| CN112820632B (en) * | 2021-01-14 | 2024-01-09 | 镓特半导体科技（上海）有限公司 | Semiconductor structure, self-supporting gallium nitride layer and preparation method thereof |
| CN114497185A (en) * | 2021-12-29 | 2022-05-13 | 深圳大学 | Preparation method of carbon-doped insulating layer, HEMT device and preparation method thereof |
| CN114497185B (en) * | 2021-12-29 | 2023-08-25 | 深圳市爱迪芯半导体有限公司 | Preparation method of carbon doped insulating layer, HEMT device and preparation method thereof |
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Application publication date: 20150701 |
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