CN105374677A - Method of preparing high electron mobility transistor (HEMT) on large-sized Si substrate - Google Patents
Method of preparing high electron mobility transistor (HEMT) on large-sized Si substrate Download PDFInfo
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- CN105374677A CN105374677A CN201410421647.1A CN201410421647A CN105374677A CN 105374677 A CN105374677 A CN 105374677A CN 201410421647 A CN201410421647 A CN 201410421647A CN 105374677 A CN105374677 A CN 105374677A
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Abstract
The invention provides a method of preparing a high electron mobility transistor (HEMT) on a large-sized Si substrate, and particularly relates to a method of preparing a crack-free and high-crystal quality AlGaN/GaN HEMT device by adopting a selective area growth (SAG) method and by adopting carbon nanotubes as a periodic dielectric mask. On the Si substrate, a metal organic chemical vapor phase epitaxy technology is adopted to grow an AlN nucleation layer and an AlGaN seed layer; then, a low pressure chemical vapor deposition (LPCVD) method is adopted to grow multiple layers of carbon nanotubes arranged neatly, and through growth and weaving, a continuous carbon nanotube film is formed finally; on the basis, the SAG method is adopted, growth selectivity of GaN on the dielectric mask and the substrate is used, a GaN epitaxial layer is limited to grow in a region without a concealed film, a discrete window is formed, and tensile stress in the overall epitaxial layer is released; and multi-cycle Al component-gradient Aly1Ga1-y1N/GaN superlattices or AlN/Aly1Ga1-y1N/GaN superlattices are adopted as a stress control layer, and the crack-free and high-crystal quality GaN epitaxial layer is acquired. On the basis, the AlGaN/GaN HEMT device is prepared.
Description
Technical field
The present invention relates to a kind of method preparing high electron mobility [field effect] transistor (HEMT, highelectronmobilitytransistor) on large scale Si substrate.Particularly relate to a kind of carbon nanotube that adopts as periodic dielectric mask, adopt constituency [extension] growth, the preparation of (selectiveareagrowth, SAG) method, without the AlGaN/GaNHEMT device method of be full of cracks, high-crystal quality, belongs to field of semiconductor photoelectron technique.
Background technology
High electron mobility field-effect transistor (HEMT), also known as modulation-doped FET (MODFET, modulation-dopedfieldeffecttransistor), be the field-effect transistor (FET) that a kind of two-dimensional electron gas of the heterogeneous interface formed with backing material and another kind of broadband material conducts electricity.Because of free from admixture in its raceway groove, substantially there is not the impact of ionized impurity scattering on electron motion, therefore electron mobility is higher and gain the name.The operation principle of HEMT makes the channel current between source electrode, drain electrode produce corresponding change by the change of control grid voltage, thus reach the object of amplifying signal.Its advantage has high frequency and low noise characteristic.In the receiving circuit of HEMT now for satellite television, mobile communication, military communication and radar system.Since GaAs based hemts in 1980 is succeeded in developing, obtain very fast development.GaAs based hemts is widely used in radio frequency, microwave and millimeter wave low-frequency range.InP device has higher operating frequency and lower noise than GaAsHEMT, for millimeter wave high band and submillimeter wave frequency range.The feature of GaNHEMT device is high temperature resistant, high-power, has huge application prospect, particularly occupies superiority at 10-40GHz.
AlGaN/GaNHEMT is due to (3.4eV), puncture voltage high (3.3MV/cm), the large (2.8*10 of saturated electrons speed greatly of the GaN band gap width as channel layer
7s
-1) and two-dimensional electron gas surface density high by (10
13cm
2) etc. characteristic, cause the research of GaN base HEMT to more high operate frequency, larger power output, more elevated operating temperature and practical future development.GaN base HEMT can also be used for high speed switch integrated circuit and high pressure DC-DC converter aspect.AlGaN/GaNHEMT growth is on semi-insulated (0001) Si face SiC or (0001) Sapphire Substrate, the semi-insulated GaN of one deck (about 2 μm) channel layer is grown after coring layer, then grow plain AlGaN separator, mix the AlGaN of Si and plain AlGaN potential barrier.Two-dimensional electron gas is formed in channel layer/separator interface.Si substrate dimension is large, inexpensive can reduce epitaxial growth cost.Contrast hardness is large, the adiabatic Sapphire Substrate of poor heat conductivity, simplifies the processing technologys such as substrate thinning, reduces device making technics cost.
Gas phase epitaxy of metal organic compound (metalorganicvaporphaseepitaxy on Si, MOVPE) difficult point of growing GaN is: (0001) of GaN Wurzite structure is 20.4% with the lattice mismatch of Si (111) substrate of diamond lattic structure, can produce a large amount of dislocations; Thermal mismatching between GaN and Si is up to 56%, and in the cooling engineering after epitaxial growth terminates, epitaxial loayer will bear very large tensile stress.Because epitaxy layer thickness is much smaller than substrate thickness, so micro-crack can be produced in epitaxial loayer, have a strong impact on GaN device characteristic.On Si substrate during direct growth GaN, NH
3easy and substrate Si reacts and forms amorphous SiN at substrate surface, affects the growth quality of GaN.Also there is very strong chemical reaction between metal Ga and substrate Si, back dissolving can be caused to substrate, thus destroy the smooth of interface.When high growth temperature, the Si in substrate can diffuse to buffer-layer surface, if control improper, will affect the growth pattern of GaN, thus destroys crystal mass.In addition because Si is non-polar semiconductor, the problem that some compound polarity is relevant will when growing GaN, AlN or other polar semiconductors, be produced thereon.
Adopt suitable resilient coating to be lattice mismatch when solving Si substrate growth GaN, Si diffusion and the effective means of polarity problems, also can alleviate the stress in film simultaneously to a certain extent.People attempted many methods for this reason, as compound buffer layers such as AlAs, AlN and AlGaN/AlN.Wherein AlN result is best, and its major advantage both can grow at same reative cell with GaN, can avoid again the formation of SiN during high growth temperature.According to its Stress Release mechanism, many solutions are proposed:
(1) resilient coating stress compensation method: the tensile stress providing a compression to compensate thermal mismatching to cause to upper strata GaN by resilient coating.As adopted the Al of 5 gradients
xga
1-xn (x=0.87,0.67,0.47,0.27 and 0.07) resilient coating, result shows that be full of cracks density obviously reduces, and optical characteristics also improves a lot.
(2) insert layer stress cutting-out method: the stress state being regulated film inside by insert layer, or the propagation stopping the tensile stress imported into from substrate due to thermal mismatching.As superlattice insert layer method: the AlN/GaN superlattice inserting 10 cycles make insert layer, and growing GaN gross thickness is 2 μm, along with the increase of the superlattice insert layer number of plies, tensile strain reduces.TEM shows dislocation density and reduces with varied in thickness.
But adopt the insert layer method of current main flow to eliminate stress completely, and existing defects density is large, the problems such as warpage.Moreover reduce effective conventional ELOG (epitaxiallateralovergrowth, the ELOG) technology of GaN dislocation density to be difficult to be applied on AlGaN, because Al atom is poor at the transfer ability of growing surface, AlGaN can deposit on mask.
The present invention, on large scale Si substrate, adopt carbon nanotube as periodic dielectric mask, adopt the preparation of selective area epitaxial (SAG) method without the AlGaN/GaNHEMT device of be full of cracks, high-crystal quality, not only effectively can solve the undesirable stress and defect that still exist in technology so far, effectively alleviate warpage.
Summary of the invention
The invention provides a kind of method preparing high electron mobility field-effect transistor (HEMT) on large scale Si substrate, technical scheme of the present invention is as follows: on a si substrate, and (1) adopts metal organic chemical vapor deposition technology growth AlN nucleating layer and AlGaN inculating crystal layer.(2) then adopt Low Pressure Chemical Vapor Deposition (LPCVD, LowPressureChemicalVaporDeposition), adopt acetylene as carrier gas, adopt the Fe of 5nm as catalyst simultaneously, the multilayer carbon nanotube of growth marshalling.Carbon nanotube diameter after growth is 15nm.By growing and weaving, finally continuous print carbon nano-tube film can be formed by carbon nano pipe array arranged in parallel.(3) selective area epitaxial (SAG) method is adopted on this basis, utilize GaN in the selectivity of medium mask and Grown, GaN epitaxial layer is limited in and does not have to grow in the region of hidden film, form discrete window, utilize " controlled facet growth technique " that dislocation is bent, thus low threading dislocation density falls on whole area, discharge the tensile stress in whole epitaxial loayer, obtain the GaN epitaxial layer without be full of cracks, high-crystal quality.(4) Al of multicycle Al content gradually variational is grown on this basis
y1ga
1-y1n/GaN superlattice or AlN/Al
y1ga
1-y1n/GaN superlattice are as stress regulation and control layer.(5) final preparation AlGaN/GaNHEMT device.The method comprises the following steps:
Step one, in Metal Organic Vapor epitaxial reactor, at hydrogen (H
2) under atmosphere, on a si substrate, at temperature 1000 DEG C ~ 1500 DEG C, pass into TMAl as III source, NH
3as group V source, growth 0.1 ~ 0.5 micron thickness AlN nucleating layer; On this basis, at temperature 1000 DEG C ~ 1500 DEG C, TMAl, TMGa is passed into as III source, NH
3as group V source, growth 0.1 ~ 1 micron thickness AlGaN inculating crystal layer.
Step 2, adopts Low Pressure Chemical Vapor Deposition (LPCVD) to grow the multilayer carbon nanotube of marshalling.In growth course, adopt acetylene as carrier gas, adopt Fe as catalyst simultaneously.Carbon nanotube diameter after growth is 15nm.By growing and weaving, finally form continuous print carbon nano-tube film by carbon nano pipe array arranged in parallel.
Step 3, at hydrogen (H
2) under atmosphere, at 1000 DEG C ~ 1500 DEG C, pass into TMGa as III source, NH
3as group V source, adopt selective area epitaxial (SAG) method on this basis, utilize GaN in the selectivity of medium mask and Grown, GaN epitaxial layer is limited in and does not have to grow in the region of hidden film, form discrete window, discharge the tensile stress in whole epitaxial loayer, grow 0.1 ~ 1 micron of GaN amalgamation layer.
Step 4, at hydrogen (H
2) under atmosphere, at 1000 DEG C ~ 1500 DEG C, pass into TMGa, TMAl as III source, NH
3as the Al of the Al composition gradient gradual change of group V source growth multicycle unsymmetric structure
y1ga
1-y1n/GaN superlattice or AlN/Al
y1ga
1-y1n/GaN superlattice, as stress regulation and control layer, superlattice period number is 1 ~ 20.Wherein the thickness of superlattice well layer GaN is 1 ~ 5nm, superlattice Al
y1ga
1-y1the thickness of N barrier layer is 1 ~ 5nm, and the thickness of superlattice AlN insert layer is 1 ~ 5nm;
Al component y
1along with the increase of stress regulation and control layer superlattice period number is reduced to 0 (0≤y1≤1) from 1 gradient.
Step 5, at hydrogen (H
2) under atmosphere, at 1050 DEG C ~ 1200 DEG C, pass into TMGa as III source, NH
3as group V source growth 2 ~ 4 micron thickness μ-GaN semi-insulating layers.Then TMGa, TMAl is passed into as III source, NH
3as group V source, SiH
4grow plain 5nm ~ 15nmAlGaN separator as N-shaped doped source, 10nm ~ 20nm mixes the AlGaN of Si and plain AlGaN potential barrier.
The present invention's one prepares the method for high electron mobility field-effect transistor (HEMT) on large scale Si substrate, adopt carbon nanotube as periodic dielectric mask, adopt the preparation of selective area epitaxial (SAG) method without the AlGaN/GaNHEMT device of be full of cracks, high-crystal quality, even the stress that the technology so far that not only can effectively solve exists and defect, effective alleviation warpage, and effectively can improve thermal conductance.
Accompanying drawing explanation
Fig. 1 is that in the embodiment of the present invention 1, one adopts carbon nanotube as periodic dielectric mask and adopts Al
y1ga
1-y1the profile of the new structure AlGaN/GaNHEMT device of N/GaN superlattice stress regulation and control layer;
Fig. 2 is that in the embodiment of the present invention 2, one adopts carbon nanotube as periodic dielectric mask and adopts AlN/Al
y1ga
1-y1the profile of N/GaN superlattice new structure AlGaN/GaNHEMT device;
Fig. 3 (a) is that the not employing carbon nanotube of ordinary construction is as periodic dielectric mask and do not adopt Al
y1ga
1-y1n/GaN superlattice or AlN/Al
y1ga
1-y1the SEM photo of the AlGaN/GaNHEMT device of N/GaN superlattice stress regulation and control layer: Fig. 3 (b), (c) are the SEM photos of the AlGaN/GaNHEMT device adopting the embodiment of the present invention 1 and embodiment 2 new structure.
Embodiment
The invention provides a kind of method preparing high electron mobility field-effect transistor (HEMT) on large scale Si substrate.Use trimethyl gallium (TMGa), trimethyl aluminium (TMAl) as III source, ammonia (NH
3) as group V source, silane (SiH
4) as N-shaped doped source, on a si substrate, first low-temperature epitaxy AlN nucleating layer and AlGaN inculating crystal layer.The creative carbon nanotube that adopts is as periodic dielectric mask on this basis, adopts selective area epitaxial (SAG) method, and regulates and controls Rotating fields by design stress, obtain the AlGaN epitaxial loayer without be full of cracks, high-crystal quality.And prepare AlGaN/GaNHEMT device further.
Fig. 1 is according to an embodiment of the invention for realizing AlGaN/GaNHEMT device side cutaway view of the present invention.Fig. 1 comprises Si substrate 101, AlN nucleating layer and AlGaN inculating crystal layer 102, carbon nano-tube mask 103, GaN amalgamation layer 104; Al
y1ga
1-y1n/GaN superlattice stress regulation and control layer 105, u-GaN (undopedGaN) semi-insulating layer 106.U-AlGaN (undopedAlGaN) separator 107, n-AlGaN (n-dopedAlGaN) and u-AlGaN (undopedAlGaN) barrier layer 108.
Fig. 2 is according to an embodiment of the invention for realizing AlGaN/GaNHEMT device side cutaway view of the present invention.Fig. 1 comprises Si substrate 201, AlN nucleating layer and AlGaN inculating crystal layer 202, carbon nano-tube mask 203, GaN amalgamation layer 204; AlN/Al
y1ga
1-y1n/GaN superlattice stress regulation and control layer 205, u-GaN (undopedGaN) semi-insulating layer 206.U-AlGaN (undopedAlGaN) separator 207, n-AlGaN (n-dopedAlGaN) and u-AlGaN (undopedAlGaN) barrier layer 208.
Wherein, periodic dielectric mask on Si substrate adopts carbon nano-tube, and stress regulation and control layer adopts the AlGaN/AlGaN superlattice of Al content gradually variational or AlN/AlGaN/GaN superlattice structure or other structure, as long as meet Al composition gradient gradual change principle can.
Embodiment 1
Use Aixtron company, close coupling vertical reative cell MOCVD growing system.Use trimethyl gallium (TMGa), trimethyl aluminium (TMAl) as III source in growth course, ammonia (NH
3) as group V source, silane (SiH
4) as N-shaped doped source, two luxuriant magnesium (Cp
2mg) as p-type doped source, first in MOCVD reative cell, Si substrate 101 is heated to 1080 DEG C, at H
2under atmosphere, use TMGa, TMAl as III source, NH
3as group V source, grow 0.1 micron thickness AlN nucleating layer; Then, at 1080 DEG C, H
2under atmosphere, pass into TMAl, TMGa as III source, NH
3as group V source, grow 0.5 micron thickness AlGaN inculating crystal layer 102.Low Pressure Chemical Vapor Deposition (LPCVD) is adopted to grow the multilayer carbon nanotube of marshalling.In growth course, adopt acetylene as carrier gas, adopt the Fe of 5nm as catalyst simultaneously.Carbon nanotube diameter after growth is 15nm.By growing and weaving, finally continuous print carbon nano-tube film 103 can be formed by carbon nano pipe array arranged in parallel.At 1080 DEG C, H
2under atmosphere, pass into TMGa, TMAl as III source, NH
31 μm of GaN amalgamation layer 104 is grown as group V source; At 1080 DEG C, H
2under atmosphere, pass into TMGa, TMAl as III source, NH
3(3nm) Al of the Al composition gradient gradual change of the unsymmetric structure in 20 cycles is grown as group V source
y1ga
1-y1n/ (3nm) GaN superlattice insert layer, as stress regulation and control layer 105.Wherein Al component y1 is reduced to 0.05, Al component stepped change with the increase of superlattice period number from 1 staged is realize (increasing Al component y with superlattice period number by the flow of control TMAl
1be followed successively by 1,0.95,0.9,0.85,0.8,0.75,0.7,0.65,0.6,0.55,0.5,0.45,0.4,0.35,0.3,0.25,0.2,0.15,0.1,0.05); Under hydrogen (H2) atmosphere, at 1080 DEG C, pass into TMGa as III source, NH
32 μm of thick u-GaN semi-insulating layers 106 are grown as group V source.Then, at 1080 DEG C, H
2under atmosphere, pass into TMGa, TMAl as III source, NH
3as group V source, SiH
4the plain AlGaN potential barrier 108 of AlGaN and 20nm that plain 15nmAlGaN separator 107,20nm mixes Si is grown as N-shaped doped source.
Embodiment 2
Use Aixtron company, close coupling vertical reative cell MOCVD growing system.Use trimethyl gallium (TMGa), trimethyl aluminium (TMAl) as III source in growth course, ammonia (NH
3) as group V source, silane (SiH
4) as N-shaped doped source, two luxuriant magnesium (Cp
2mg) as p-type doped source, first in MOCVD reative cell, Si substrate 201 is heated to 1080 DEG C, at H
2under atmosphere, use TMGa, TMAl as III source, NH
3as group V source, grow 0.1 micron thickness AlN nucleating layer; Then, at 1080 DEG C, H
2under atmosphere, pass into TMAl, TMGa as III source, NH
3as group V source, grow 0.5 micron thickness AlGaN inculating crystal layer 202.Low Pressure Chemical Vapor Deposition (LPCVD) is adopted to grow the multilayer carbon nanotube of marshalling.In growth course, adopt acetylene as carrier gas, adopt the Fe of 5nm as catalyst simultaneously.Carbon nanotube diameter after growth is 15nm.By growing and weaving, finally continuous print carbon nano-tube film 203 can be formed by carbon nano pipe array arranged in parallel.At 1080 DEG C, H
2under atmosphere, pass into TMGa, TMAl as III source, NH
31 μm of GaN amalgamation layer 204 is grown as group V source; At 1080 DEG C, H
2under atmosphere, pass into TMGa, TMAl as III source, NH
3(3nm) AlN/ (3nm) Al of the Al composition gradient gradual change of the unsymmetric structure in 20 cycles is grown as group V source
y1ga
1-y1n/ (3nm) GaN superlattice insert layer, as stress regulation and control layer 205.Wherein Al component y1 is reduced to 0.05, Al component stepped change with the increase of superlattice period number from 1 staged is realize (increasing Al component y with superlattice period number by the flow of control TMAl
1be followed successively by 1,0.95,0.9,0.85,0.8,0.75,0.7,0.65,0.6,0.55,0.5,0.45,0.4,0.35,0.3,0.25,0.2,0.15,0.1,0.05); Under hydrogen (H2) atmosphere, at 1080 DEG C, pass into TMGa as III source, NH
32 μm of thick u-GaN semi-insulating layers 206 are grown as group V source.Then, at 1080 DEG C, H
2under atmosphere, pass into TMGa, TMAl as III source, NH
3as group V source, SiH
4the plain AlGaN potential barrier 208 of AlGaN and 20nm that plain 15nmAlGaN separator 207,20nm mixes Si is grown as N-shaped doped source.
As shown in Fig. 3 (b), (c) SEM photo, adopt technology in the present invention: carbon nanotube is as periodic dielectric mask, adopt selective area epitaxial (SAG) method, and regulate and control Rotating fields by design stress, obtain the AlGaN/GaNHEMT device without be full of cracks, high-crystal quality.And do not adopt carbon nanotube as periodic dielectric mask and do not adopt Al
y1ga
1-y1n/GaN superlattice or AlN/Al
y1ga
1-y1alGaN/GaNHEMT device surface prepared by the commonsense method of N/GaN superlattice has obvious be full of cracks.
Above-described embodiment is only and technological thought of the present invention and feature is described, it describes comparatively concrete and detailed, its object is to enable those of ordinary skill in the art understand content of the present invention and implement according to this, therefore only the scope of the claims of the present invention can not be limited with this, but therefore limitation of the scope of the invention can not be interpreted as.It should be noted that, for the person of ordinary skill of the art, without departing from the inventive concept of the premise, some distortion and improvement can also be made, namely all changes done according to disclosed spirit, must be encompassed in the scope of the claims of the present invention.
Claims (6)
1. on large scale Si substrate, prepare the method for high electron mobility field-effect transistor (HEMT) for one kind.Use trimethyl gallium (TMGa), trimethyl aluminium (TMAl) as III source, ammonia (NH
3) as group V source, silane (SiH
4) as N-shaped doped source, on a si substrate, first growing AIN nucleating layer and AlGaN inculating crystal layer.The creative carbon nanotube that adopts is as periodic dielectric mask on this basis, and employing selective area epitaxial (SAG) method, obtains the GaN epitaxial layer without be full of cracks, high-crystal quality, and prepares AlGaN/GaNHEMT device further.The method comprises the following steps:
Step one, in Metal Organic Vapor epitaxial reactor, at hydrogen (H
2) under atmosphere, on a si substrate, at temperature 1000 DEG C ~ 1500 DEG C, pass into TMAl as III source, NH
3as group V source, growth 0.1 ~ 0.5 micron thickness AlN nucleating layer; On this basis, at temperature 1000 DEG C ~ 1500 DEG C, TMAl, TMGa is passed into as III source, NH
3as group V source, growth 0.1 ~ 1 micron thickness AlGaN inculating crystal layer.
Step 2, adopts Low Pressure Chemical Vapor Deposition (LPCVD) to grow the multilayer carbon nanotube of marshalling.In growth course, adopt acetylene as carrier gas, adopt Fe as catalyst simultaneously.Carbon nanotube diameter after growth is 15nm.By growing and weaving, finally form continuous print carbon nano-tube film by carbon nano pipe array arranged in parallel.
Step 3, at hydrogen (H
2) under atmosphere, at 1000 DEG C ~ 1500 DEG C, pass into TMGa as III source, NH
3as group V source growth 0.1 ~ 1 micron of GaN amalgamation layer.
Step 4, at hydrogen (H
2) under atmosphere, at 1000 DEG C ~ 1500 DEG C, pass into TMGa, TMAl as III source, NH
3as the Al of the Al composition gradient gradual change of group V source growth multicycle unsymmetric structure
y1ga
1-y1n/GaN superlattice insert layer, as stress regulation and control layer.
Step 5, at hydrogen (H
2) under atmosphere, at 1050 DEG C ~ 1200 DEG C, pass into TMGa as III source, NH
3as group V source growth 2 ~ 4 micron thickness GaN semi-insulating layers.Then TMGa, TMAl is passed into as III source, NH
3as group V source, SiH
4grow plain 5nm ~ 15nmAlGaN separator as N-shaped doped source, 10nm ~ 20nm mixes the AlGaN of Si and plain AlGaN potential barrier.
2. one according to claim 1 prepares the method for high electron mobility field-effect transistor (HEMT) on large scale Si substrate, it is characterized in that: form continuous print carbon nano-tube film as periodic dielectric mask by periodicity carbon nano pipe array arranged in parallel.Adopt selective area epitaxial (SAG) method on this basis, utilize the selectivity that GaN grows on New Type of Carbon nanotube medium mask and AlGaN inculating crystal layer, GaN epitaxial layer is limited in and does not have to grow in the region of hidden film, form discrete window, discharge the tensile stress in whole epitaxial loayer.
3. one according to claim 1 prepares the method for high electron mobility field-effect transistor (HEMT) on large scale Si substrate, it is characterized in that: described stress regulation and control layer adopts the Al of multicycle Al content gradually variational
y1ga
1-y1n/GaN superlattice, wherein, Al component y
1along with the increase of stress regulation and control layer superlattice period number is reduced to 0 (0≤y1≤1) from 1 gradient.Superlattice period number is 1 ~ 20.
4. one according to claim 1 prepares the method for high electron mobility field-effect transistor (HEMT) on large scale Si substrate, it is characterized in that: described stress regulation and control layer adopts the Al of multicycle Al content gradually variational
y1ga
1-y1n/GaN superlattice, wherein the thickness of superlattice well layer GaN is 1 ~ 5nm, superlattice Al
y1ga
1-y1the thickness of N barrier layer is 1 ~ 5nm.
5. one according to claim 1 prepares the method for high electron mobility field-effect transistor (HEMT) on large scale Si substrate, it is characterized in that: described stress regulation and control layer adopts the AlN/Al of multicycle unsymmetric structure Al content gradually variational
y1ga
1-y1n/GaN superlattice, wherein Al component y
1along with the increase of stress regulation and control layer superlattice period number is reduced to 0 (0≤y1≤1) from 1 gradient, superlattice period number is 1 ~ 20.
6. one according to claim 1 prepares the method for high electron mobility field-effect transistor (HEMT) on large scale Si substrate, it is characterized in that: described stress regulation and control layer adopts the AlN/Al of multicycle unsymmetric structure Al content gradually variational
y1ga
1-y1n/GaN superlattice, wherein the thickness of superlattice well layer GaN is 1 ~ 5nm, superlattice Al
y1ga
1-y1the thickness of N barrier layer is 1 ~ 5nm, and the thickness of superlattice AlN insert layer is 1 ~ 5nm.
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| CN106783547A (en) * | 2016-12-30 | 2017-05-31 | 东莞市中镓半导体科技有限公司 | Method for preparing high electron mobility field-effect transistor on a silicon substrate |
| CN110034174A (en) * | 2019-02-28 | 2019-07-19 | 华灿光电(苏州）有限公司 | High electron mobility transistor epitaxial wafer and preparation method thereof |
| CN112397587A (en) * | 2020-11-23 | 2021-02-23 | 江苏大学 | Normally-on high electron mobility transistor and manufacturing method thereof |
| CN112397586A (en) * | 2020-11-23 | 2021-02-23 | 江苏大学 | Normally-on silicon substrate high electron mobility transistor and manufacturing method thereof |
| WO2023226962A1 (en) * | 2022-05-26 | 2023-11-30 | 华为技术有限公司 | Semiconductor device, electronic chip, and electronic device |
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