CN104576714B - High mobility GaN base heterojunction structure and preparation method thereof on a kind of silicon - Google Patents
High mobility GaN base heterojunction structure and preparation method thereof on a kind of silicon Download PDFInfo
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- CN104576714B CN104576714B CN201510037027.2A CN201510037027A CN104576714B CN 104576714 B CN104576714 B CN 104576714B CN 201510037027 A CN201510037027 A CN 201510037027A CN 104576714 B CN104576714 B CN 104576714B
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 33
- 239000010703 silicon Substances 0.000 title claims abstract description 32
- 238000002360 preparation method Methods 0.000 title abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000001746 injection moulding Methods 0.000 claims abstract description 23
- 239000000843 powder Substances 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 20
- 230000004888 barrier function Effects 0.000 claims abstract description 17
- 239000013078 crystal Substances 0.000 claims abstract description 12
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 11
- 239000000470 constituent Substances 0.000 claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims abstract description 5
- 229910002601 GaN Inorganic materials 0.000 claims description 79
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 20
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 229910052738 indium Inorganic materials 0.000 claims description 13
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 13
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 9
- 229910052733 gallium Inorganic materials 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 229910017083 AlN Inorganic materials 0.000 claims description 8
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 239000004411 aluminium Substances 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- IWBUYGUPYWKAMK-UHFFFAOYSA-N [AlH3].[N] Chemical compound [AlH3].[N] IWBUYGUPYWKAMK-UHFFFAOYSA-N 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 10
- 238000005516 engineering process Methods 0.000 abstract description 9
- 238000000407 epitaxy Methods 0.000 abstract description 9
- 125000005842 heteroatom Chemical group 0.000 abstract description 4
- 238000011161 development Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 109
- 230000005533 two-dimensional electron gas Effects 0.000 description 13
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000033228 biological regulation Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000012876 topography Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000010181 polygamy Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000036413 temperature sense Effects 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
Abstract
The invention provides high mobility GaN base heterojunction structure and preparation method thereof on a kind of silicon substrate, belong to technical field of semiconductors.The GaN base heterojunction structure is stratiform overlaying structure, and material from bottom to top is followed successively by：Silicon substrate, nucleating layer, stress and powder injection molding layer, epitaxial layer, channel layer, insert layer and barrier layer, wherein stress and powder injection molding layer are AlGaN layer, and its thickness is 10 μm of 10nm；And Al molar constituents are 1 26%.Compared with GaN base hetero structure epitaxy technology on existing cumbersome silicon, defect concentration can be greatly reduced in the present invention, improve the crystal mass of heterogeneous structure material, be quite suitable for high frequency, the development of high-power component of low cost.
Description
Technical field
The invention belongs to technical field of semiconductors, high mobility GaN base is heterogeneous on more particularly to a kind of silicon (Si) substrate
Structure and preparation method thereof.
Background technology
Third generation semiconductor by representative of group III-nitride has high energy gap, high breakdown electric field, high saturated electrons
The excellent property such as drift velocity and strong polarization, is based particularly on the high mobility transistor of AlGaN/GaN heterojunction structures
(HEMT) there is the excellent specific properties such as switching speed is fast, conducting resistance is low, device volume is small, high temperature resistant, energy-conservation, be expected in the next generation
Highly efficient power field of electronic devices is used widely.
In using sapphire, carborundum, silicon as the GaN base heterogeneous structure material of backing material, the upper GaN base heterojunction structures of Si
Material and device are because it is in large scale, low cost and with having obvious advantage in terms of existing Si process compatibles, in the sun
Can the field such as inverter, hybrid vehicle inverter, power power-supply, the power converter of household electrical appliance and industrial equipment have extensively
Therefore general application prospect, also become one of focus of nitride arena research in the world.
Two-dimensional electron gas mobility and concentration are two most important indexs for characterizing GaN base heterogeneous structure material quality, right
Play an important roll in the output current density and power density for improving device.And influence the scattering machine of two-dimensional electron gas mobility
System mainly has interface roughness scattering, dislocation scattering, alloy disorder scattering and phon scattering etc..For GaN base on Si substrates
Contain substantial amounts of defect in heterogeneous structure material, the larger lattice mismatch due to existing, the material extended outside, these defects are significantly
The raising of two-dimensional electron gas performance is limited, while having had a strong impact on the reliability of device.On the other hand, it is high due to thermal mismatching
After temperature growth GaN base material, the huge tensile stress that GaN base epitaxial material can be applied by Si substrates during cooling,
Cause the strong warpage of epitaxial material or even cracking, it is difficult to meet the requirement of technique.Therefore, how by stress and defect project,
The cracking of epitaxial material is avoided, and obtains the GaN base Heterostructure Epitaxial Materials of low-defect-density, is to develop GaN base work(on Si
Rate electronic device needs the matter of utmost importance solved.In the prior art in order to realize on Si the stress of GaN heterogeneous structure materials and lack
Control is fallen into, that improves two-dimensional electron gas transports performance, and following three kinds of methods are usually taken in the world：
(1) low-temperature AlN interlayer technology, such as [1] A.Dadgar et al., Jpn.J.Appl.Phys.39 L1183
(2000).This technological merit can be achieved on thicker GaN base epitaxial layer, but because the crystal mass of N layers of low temperature AI is poor
So that the quality of GaN base epitaxial layer is also affected, it is less desirable in terms of the mobility of two-dimensional electron gas is improved.Exist simultaneously
Multiple heating and cooling is needed in MOCVD epitaxy, the complexity of epitaxy technique is considerably increased.
(2) AlN/GaN superlattices technology, such as [2] E.Feltin et al., Phys.Status Solidi (a) 188
531(2001).This technology can reduce dislocation density to a certain extent, improve crystal mass, but in the preparation of thick film GaN
It is upper that there is certain difficulty, while the cycle is long, add extension cost.
(3) Al composition gradients gradual change AlGaN technologies (being generally from high Al contents gradient to low Al components), such as [3]
K.Cheng et al.J.Electron.Mater.25,4(2006).This technology is related in the middle of both the above technology
To multiple (more than three times) ternary alloy three-partalloy AlGaN growth, because Al components are influenceed quicker by MOCVD reative cells such as temperature
Sense, epitaxial step is more, also by certain challenge in the repeatability and stability of Stress Control.
The content of the invention
It is an object of the invention to overcome answering for the technical not enough and technique of GaN base hetero structure epitaxy on existing Si
Polygamy there is provided high mobility GaN base heterojunction structure on a kind of Si, i.e., by the use of the low Al components AlGaN of individual layer as stress and
Powder injection molding layer, to prepare high mobility GaN base heterogeneous structure material on Si.
To achieve these goals, technical scheme is as follows：High mobility GaN base heterojunction structure on a kind of Si, from the bottom to top
Include successively：Silicon substrate；Nucleating layer；The nucleating layer is on silicon substrate, stress and powder injection molding layer；The stress and powder injection molding
Layer is on nucleating layer, epitaxial layer；The epitaxial layer is on stress and powder injection molding layer, channel layer；The channel layer is in epitaxial layer
On, insert layer；The insert layer is on channel layer, barrier layer；The barrier layer is on insert layer, wherein stress and defect control
Preparative layer is AlGaN layer, and its thickness is 10nm-10 μm, and Al molar constituents are 1-26%.
The present invention also provides a kind of preparation method of high mobility GaN base heterojunction structure, can be effective gram using this method
The technical complexity of GaN base hetero structure epitaxy on existing Si substrates is taken, epitaxy technique is simple and effective and rapid, stability
Height, while heterojunction structure crystal mass can be increased substantially, improves the transport property of two-dimensional electron gas, comprises the following steps：
(1) Si substrates are selected；
(2) one layer of aluminum gallium nitride or aln nucleation layer are grown on a si substrate；
(3) growth stress and powder injection molding layer on nucleating layer, the stress and powder injection molding layer are AlGaN layer, its thickness
For 10nm-10 μm, and Al molar constituents are 1-26%；
(4) growing gallium nitride or aluminum gallium nitride epitaxial layer on stress and powder injection molding layer；
(5) growing gallium nitride or indium gallium nitrogen channel layer on epitaxial layer；
(6) the growing aluminum nitride insert layer on channel layer；
(7) aluminum gallium nitride barrier layer or indium aluminium nitrogen barrier layer are grown in insert layer, so as to prepare GaN base on a si substrate
Heterojunction structure.
It is preferred that, the nucleating layer, stress and powder injection molding layer, epitaxial layer, channel layer, the growth of insert layer and barrier layer
Method is Metal Organic Vapor extension (MOCVD), and molecular beam epitaxy (MBE), hydride gas-phase epitaxy (HVPE) is gentle
One kind in phase epitaxy (CVD).
The present invention uses unique low aluminium component aluminum gallium nitride of individual layer as stress and powder injection molding layer, further by accurate
Control growth conditions, such as temperature, pressure, V/III etc., the defect concentration in GaN epitaxial layer can be effectively reduced, is improved different
The mobility of the crystal mass of structural material material, particularly two-dimensional electron gas.With reference to shown in Fig. 2, the GaN prepared using the present invention
X-ray diffraction (XRD) plane of symmetry (002) of epitaxial layer and the halfwidth (FWHM) of asymmetric face (102) rocking curve are respectively
389arcsec and 527arcsec；The AlGaN/GaN heterojunction structures of extension two-dimensional electron gas (2DEG) at room temperature on this basis
Mobility [mu]=2030cm2/ V.s, carrier concentration n=8.4E12/cm2。
It is of the invention by the low aluminium component aluminium of individual layer compared with GaN base hetero structure epitaxy technology on existing cumbersome Si
Gallium nitrogen is as stress and powder injection molding layer, and not only preparation method is simple and easy to apply, and defect concentration can be greatly reduced, and improves different
The crystal mass of structural material material, is quite suitable for high frequency, the development of high-power component of low cost.
Brief description of the drawings
Fig. 1 is high mobility GaN base heterojunction structure schematic diagram on silicon of the present invention；
Fig. 2 is X-ray diffraction (XRD) figure of the GaN epitaxial layer prepared using the present invention；Wherein (a) is GaN epitaxial layer
The XRD planes of symmetry (002) rocking curve；(b) it is the asymmetric faces of XRD (102) rocking curve of GaN epitaxial layer.
Embodiment
With reference to shown in Fig. 1, the invention provides high mobility GaN base heterojunction structure on a kind of silicon, wrap successively from the bottom to top
Include：Monocrystalline substrate 1；Nucleating layer 2；Stress and powder injection molding layer 3；Epitaxial layer of gallium nitride 4；Gallium nitride channel layer 5；Aluminium nitride is inserted
Enter layer 6；Aluminum gallium nitride barrier layer or indium aluminium nitrogen barrier layer 7.
Embodiment 1
(1) a kind of monocrystalline substrate 1 is selected, the crystal orientation of silicon includes silicon (111), silicon (100), silicon (110) etc.；
(2) aluminum gallium nitride is grown in single crystalline substrate as nucleating layer 2, growth temperature is 900-1200 DEG C, and growth pressure is
10-200mbar, growth thickness is 10nm-2 μm；
(3) in the Epitaxial growth aluminum gallium nitride of nucleating layer 2 as stress and powder injection molding layer 3, growth temperature is 900-1200
DEG C, growth pressure is 10-200mbar, and growth thickness is 10nm-10 μm, and the molar constituent of aluminium is 1%, and the layer plays regulation and control should
Power and the effect for suppressing defect；
(4) the growing gallium nitride epitaxial layer 4 on stress and powder injection molding layer 3, growth temperature is 900-1100 DEG C, growth pressure
Power is 10-200mbar, and thickness is 10nm-20 μm, and epitaxial layer of gallium nitride plays a part of improving crystal mass and surface topography；
(5) the growing gallium nitride channel layer 5 on epitaxial layer of gallium nitride 4, growth temperature is 900-1200 DEG C, and growth pressure is
10-200mbar, thickness is 2nm-1.0 μm, and a good transfer passages are provided for two-dimensional electron gas；
(6) the growing aluminum nitride insert layer 6 in gallium nitride channel layer 5, reduction alloy disorder scattering, growth temperature is 900-
1200 DEG C, growth pressure is 10-200mbar, and thickness is 0.5nm-3.0nm；
(7) aluminum gallium nitride barrier layer 7 is grown on aln inserting layer 6, growth temperature is 750-1200 DEG C, and growth pressure is
10-200mbar, thickness is 3nm-50nm, constitutes and partly leads together with gallium nitride channel layer 5 below and aln inserting layer 6
Bulk heterojunction structure, the two-dimensional electron gas with high migration characteristic of high concentration is formed in its interface.
Embodiment 2
(1) a kind of monocrystalline substrate 1 is selected, the crystal orientation of silicon includes silicon (111), silicon (100)；
(2) growing aluminum nitride is as nucleating layer 2 in single crystalline substrate, and growth temperature is 900-1200 DEG C, and growth pressure is
10-200mbar, growth thickness is 10nm-2 μm；
(3) in the Epitaxial growth aluminum gallium nitride of nucleating layer 2 as stress and powder injection molding layer 3, growth temperature is 900-1200
DEG C, growth pressure is 10-200mbar, and growth thickness is 10nm-10 μm, and the molar constituent of aluminium is 15%, and the layer plays regulation and control should
Power and the effect for suppressing defect；
(4) growth aluminum gallium nitride epitaxial layer 4, mole group of the aluminium of the aluminum gallium nitride epitaxial layer 4 on stress and powder injection molding layer 3
It is divided into 0.01-15%, growth temperature is 900-1100 DEG C, growth pressure is 10-200mbar, thickness is 10nm-20 μm, gallium aluminium
Nitrogen epitaxial layer plays a part of improving crystal mass and surface topography；
(5) the growing gallium nitride channel layer 5 on aluminum gallium nitride epitaxial layer 4, growth temperature is 900-1200 DEG C, and growth pressure is
10-200mbar, thickness is 2nm-1.0 μm, and a good transfer passages are provided for two-dimensional electron gas；
(6) the growing aluminum nitride insert layer 6 in gallium nitride channel layer 5, reduction alloy disorder scattering, growth temperature is 900-
1200 DEG C, growth pressure is 10-200mbar, and thickness is 0.5nm-3.0nm；
(7) indium aluminium nitrogen barrier layer 7 is grown on aln inserting layer 6, growth temperature is 750-1200 DEG C, and growth pressure is
10-200mbar, thickness is 3nm-50nm, constitutes and partly leads together with gallium nitride channel layer 5 below and aln inserting layer 6
Bulk heterojunction structure, the two-dimensional electron gas with high migration characteristic of high concentration is formed in its interface.
Embodiment 3
(1) a kind of monocrystalline substrate 1 is selected；
(2) aluminum gallium nitride or aluminium nitride are grown in single crystalline substrate as nucleating layer 2, growth temperature is 900-1200 DEG C, raw
Long pressure is 10-200mbar, and growth thickness is 10nm-2 μm；
(3) in the Epitaxial growth aluminum gallium nitride of nucleating layer 2 as stress and powder injection molding layer 3, growth temperature is 900-1200
DEG C, growth pressure is 10-200mbar, and growth thickness is 10nm-10 μm, and the molar constituent of aluminium is 23.4%, and the layer plays regulation and control
Stress and the effect for suppressing defect；
(4) the growing gallium nitride epitaxial layer 4 on stress and powder injection molding layer 3, growth temperature is 900-1100 DEG C, growth pressure
Power is 10-200mbar, and thickness is 10nm-20 μm, and epitaxial layer of gallium nitride plays a part of improving crystal mass and surface topography；
(5) indium gallium nitrogen channel layer 5 is grown on epitaxial layer of gallium nitride 4, the molar constituent of the indium of the indium gallium nitrogen channel layer is
0.01-100%, growth temperature is 600-1200 DEG C, and growth pressure is 10-1000mbar, and thickness is 2nm-1.0 μm, is two dimension
Electron gas provides a good transfer passages；
(6) the growing aluminum nitride insert layer 6 on indium gallium nitrogen channel layer 5, reduction alloy disorder scattering, growth temperature is 900-
1200 DEG C, growth pressure is 10-200mbar, and thickness is 0.5nm-3.0nm；
(7) aluminum gallium nitride barrier layer or indium aluminium nitrogen barrier layer 7 are grown on aln inserting layer 6, growth temperature is 750-
1200 DEG C, growth pressure is 10-200mbar, and thickness is 3nm-50nm, is inserted with gallium nitride channel layer 5 below and aluminium nitride
Enter layer 6 and constitute semiconductor heterostructure together, the two-dimensional electron gas with high migration characteristic of high concentration is formed in its interface.
Embodiment described above technological thought only to illustrate the invention and feature, it describes more specific and in detail,
Its object is to enable one of ordinary skill in the art to understand present disclosure and implement according to this, therefore can not be only with this
To limit the scope of the claims of the present invention, but therefore it can not be interpreted as limitation of the scope of the invention.It should be pointed out that pair
For one of ordinary skill in the art, without departing from the inventive concept of the premise, some deformations can also be made and changed
Enter, i.e., all changes made according to disclosed spirit should be covered in the scope of the claims of the present invention.
Claims (6)
1. high mobility GaN base heterojunction structure on a kind of silicon substrate, the structure is stratiform overlaying structure, material from bottom to top according to
It is secondary to be：Silicon substrate, nucleating layer, stress and powder injection molding layer, epitaxial layer, channel layer, insert layer and barrier layer, the channel layer,
Insert layer and barrier layer constitute semiconductor heterostructure together, it is characterised in that the nucleating layer be AlGaN layer or AlN layers, its
Thickness range is 10nm-2 μm, and stress and powder injection molding layer are AlGaN layer, and its thickness is 10nm-10 μm；And Al molar constituents are
1-26%, the epitaxial layer is gallium nitride or aluminum gallium nitride, and its thickness range is 10nm-20 μm.
2. high mobility GaN base heterojunction structure on silicon substrate as claimed in claim 1, it is characterised in that the silicon substrate is
Conductive silicon substrate or semi-insulating silicon substrate, the crystal orientation of silicon include silicon (111), silicon (100), silicon (110).
3. high mobility GaN base heterojunction structure on silicon substrate as claimed in claim 1, it is characterised in that the channel layer is
Gallium nitride or indium gallium nitrogen, its thickness range are 2nm-1.0 μm.
4. high mobility GaN base heterojunction structure on silicon substrate as claimed in claim 1, it is characterised in that the insert layer is
Aluminium nitride, its thickness range is 0.5nm-3.0nm.
5. high mobility GaN base heterojunction structure on silicon substrate as claimed in claim 1, it is characterised in that the barrier layer is
Aluminum gallium nitride or indium aluminium nitrogen, its thickness range are 3nm-50nm.
6. a kind of method for preparing high mobility GaN base heterojunction structure on silicon substrate as claimed in claim 1, its feature exists
In, using the one or more in vapour phase epitaxy or molecular beam epitaxy, grow on a si substrate one layer of aluminum gallium nitride or aluminium nitride into
Stratum nucleare；AlGaN stress and powder injection molding layer are then grown on nucleating layer；Then nitridation is grown on stress and powder injection molding layer
Gallium or aluminum gallium nitride epitaxial layer；Growing gallium nitride or indium gallium nitrogen channel layer on epitaxial layer again；Then nitridation is grown on channel layer
Aluminium insert layer；Aluminum gallium nitride barrier layer or indium aluminium nitrogen barrier layer are finally grown on aln inserting layer, so as to make on a si substrate
It is standby go out GaN base heterojunction structure.
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| CN201510037027.2A CN104576714B (en) | 2015-01-23 | 2015-01-23 | High mobility GaN base heterojunction structure and preparation method thereof on a kind of silicon |
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| CN108172501A (en) * | 2017-12-22 | 2018-06-15 | 北京大学 | The epitaxial growth method of the continuous thick films of GaN in a kind of foreign substrate |
| CN108550518B (en) * | 2018-05-10 | 2020-03-24 | 南京大学 | Method for growing superlattice insertion layer for relieving/eliminating aluminum gallium nitrogen film surface cracks by adopting molecular beam epitaxy technology |
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