CN106840508A - A kind of little differential pressure sensor of silicon differential pressure chip and the built-in silicon differential pressure chip - Google Patents
A kind of little differential pressure sensor of silicon differential pressure chip and the built-in silicon differential pressure chip Download PDFInfo
- Publication number
- CN106840508A CN106840508A CN201710202854.1A CN201710202854A CN106840508A CN 106840508 A CN106840508 A CN 106840508A CN 201710202854 A CN201710202854 A CN 201710202854A CN 106840508 A CN106840508 A CN 106840508A
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- Prior art keywords
- differential pressure
- backstop layer
- silicon
- chip
- negative
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 41
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 41
- 239000010703 silicon Substances 0.000 title claims abstract description 41
- 238000005259 measurement Methods 0.000 claims abstract description 24
- 229910008045 Si-Si Inorganic materials 0.000 claims abstract description 4
- 229910006411 Si—Si Inorganic materials 0.000 claims abstract description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 29
- 238000002955 isolation Methods 0.000 claims description 20
- 239000003921 oil Substances 0.000 claims description 7
- 235000019198 oils Nutrition 0.000 claims description 7
- 229920002545 silicone oil Polymers 0.000 claims description 4
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 3
- 235000015112 vegetable and seed oil Nutrition 0.000 claims description 3
- 239000008158 vegetable oil Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 4
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004308 accommodation Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/06—Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
- G01L19/0618—Overload protection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/08—Measuring force or stress, in general by the use of counterbalancing forces
- G01L1/083—Measuring force or stress, in general by the use of counterbalancing forces using hydraulic or pneumatic counterbalancing forces
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The present invention provides the little differential pressure sensor of a kind of silicon differential pressure chip and the built-in silicon differential pressure chip, wherein silicon differential pressure chip includes lower backstop layer, upper backstop layer and the moveable measuring diaphragm in the middle of lower backstop layer and upper backstop layer, connected using Si-Si bonding between lower backstop layer and measurement film and between upper backstop layer and measurement film, it is raised that upper backstop layer inner side is provided with backstop layer, it is raised that lower backstop layer inner side is provided with lower backstop layer, upper backstop layer is raised to set gap a and measuring diaphragm between, and lower backstop layer is raised to set gap b and measurement film between.Structure design of the invention can effectively protect silicon differential pressure chip under overpressure situation, and structure and manufacturing process are simple, and medium channel is succinct, and medium filling quantity is less, and preferably, cost is relatively low for certainty of measurement, is adapted to large-scale production.
Description
Technical field
The invention belongs to chip and sensor manufacture field, more particularly to a kind of silicon differential pressure chip and the built-in silicon differential pressure core
The little differential pressure sensor of piece.
Background technology
At present, the known little differential pressure sensor with unidirectional overvoltage protection has multiple structural forms, although possess protection
The function of silicon differential pressure chip, it is well known that these little differential pressure sensor complex structures with overvoltage protection, number of parts is more,
So as to cause material and manufacturing cost higher, manufacturing process is complicated, and silicon oil infilling amount is more, and certainty of measurement is not good, prior art
In little differential pressure sensor be not suitable for large-scale production.
The content of the invention
The technical problems to be solved by the invention are to provide the elementary errors of a kind of silicon differential pressure chip and the built-in silicon differential pressure chip
Pressure sensor, structure design of the invention can effectively protect silicon differential pressure chip, and structure and manufacture work under overpressure situation
Skill is simple, and medium channel is succinct, and medium filling quantity is less, and preferably, cost is relatively low for certainty of measurement, is adapted to large-scale production.
In order to solve the above technical problems, the technical solution adopted by the present invention：A kind of silicon differential pressure chip is provided, its feature exists
In：It is described including lower backstop layer, upper backstop layer and the moveable measuring diaphragm in the middle of lower backstop layer and upper backstop layer
Connected using Si-Si bonding between lower backstop layer and measurement film and between upper backstop layer and measurement film；
The upper upper backstop layer of backstop layer inner side setting is raised, and backstop layer is raised under being set on the inside of lower backstop layer, upper backstop
Layer is raised to set gap a and measuring diaphragm between, and lower backstop layer is raised to set gap b and measurement film between.
Further, the upper backstop layer and lower backstop layer upper-lower position are symmetrical.
Further, the raised and lower raised upper-lower position of backstop layer of the upper backstop layer is symmetrical.
Further, the gap a and gap b are in the same size.
The present invention also provides a kind of little differential pressure sensor with the silicon differential pressure chip, it is characterised in that：Including differential pressure base
Seat, the two ends of the differential pressure pedestal are respectively differential pressure pedestal forward end and differential pressure pedestal negative end, and differential pressure pedestal forward end is set
There is the positive chamber isolation diaphragm that can transmit differential pressure, differential pressure pedestal negative end is provided with the negative chamber isolation diaphragm that can transmit differential pressure, described
Positive chamber isolation diaphragm is connected with the positive chamber medium channel of differential pressure base interior, bears the negative chamber of chamber isolation diaphragm and differential pressure base interior
Medium channel is connected, and the positive chamber medium channel and negative chamber medium channel middle setting have silicon differential pressure chip, differential pressure base interior
The chip base of the negative chamber cross-drilled hole medium channel of band is additionally provided with, the silicon differential pressure chip is placed in chip base.
Further, the built-in positive chamber medium of the positive chamber medium channel, the positive chamber medium is turned on positive chamber isolation diaphragm.
Further, the built-in negative chamber medium of the negative chamber medium channel, the negative chamber medium is turned on negative chamber isolation diaphragm.
Further, the positive chamber medium and negative chamber medium are respectively silicone oil, and fluorocarbon oil, vegetable oil is any one in white oil
Kind.
Beneficial effects of the present invention：The little differential pressure sensor of a kind of silicon differential pressure chip and the built-in silicon differential pressure chip is provided,
Structure design of the invention can effectively protect silicon differential pressure chip under overpressure situation, and structure and manufacturing process are simple, are situated between
Matter passage is succinct, and medium filling quantity is less, and preferably, cost is relatively low for certainty of measurement, is adapted to large-scale production.
Brief description of the drawings
Fig. 1 is the structural representation of silicon differential pressure chip amplification in little differential pressure sensor.
Fig. 2 is the further mplifying structure schematic diagram in silicon differential pressure chip in little differential pressure sensor.
Fig. 3 is the structural representation of little differential pressure sensor of the invention.
Reference in figure, the positive chamber isolation diaphragms of 1-；The positive chamber medium channels of 2-；3- differential pressure pedestals, 3.1- differential pressures pedestal is just
Xiang Duan, 3.2- differential pressure pedestal negative end；4- bears chamber isolation diaphragm；5- silicon differential pressure chips；6- chip bases；The negative chamber media of 7- lead to
Road；The negative chamber cross-drilled hole medium channel of 8- bands；11- bears chamber medium；12- measures film；The positive chamber media of 13-；Backstop layer, 14.1- under 14-
Lower backstop layer is raised；The upper backstop layers of 15-, the upper backstop layers of 15.1- are raised.
Specific embodiment
With reference to embodiment, present disclosure is more specifically illustrated.Implementation of the invention is not limited to following reality
Example is applied, any formal accommodation or change made to the present invention all should be within the scope of the present invention.
Embodiment 1：
A kind of silicon differential pressure chip, including lower backstop layer 14, upper backstop layer 15 and positioned at lower backstop layer 14 and upper backstop layer
Moveable measuring diaphragm 12 in the middle of 15, lower backstop layer 14, upper backstop layer 15 and measurement film 12 are all silicon chips, lower backstop layer
It is interconnected by the chemical bond of silicon face between 14 and measurement film 12, between upper backstop layer 15 and measurement film 12
Connected by way of this Si-Si bonding.Upper backstop layer 15 and lower backstop 14 upper-lower position of layer are symmetrical, upper backstop layer 15
Inner side is provided with backstop layer raised 15.1, and the lower inner side of backstop layer 14 is provided with lower backstop layer raised 14.1, and upper backstop layer is convex
Rise 15.1 and lower backstop raised 14.1 upper-lower position of layer it is also symmetrical, upper backstop layer raised 14.1 and lower backstop layer raised 15.1
Be disposed in differential pressure process is measured, when differential pressure overrate, middle measuring diaphragm 12 can be attached to backstop guarantor
In sheath projection, the further displacement of measurement film 12 is prevented, so as to protect measurement film 12；Upper backstop layer raised 15.1
Gap a is set between measuring diaphragm 12, gap b is set between lower backstop layer raised 14.1 and measurement film 12, and gap a and
Gap b is in the same size.
A kind of little differential pressure sensor with the silicon differential pressure chip, including differential pressure pedestal 3, can transmit the positive chamber isolation of differential pressure
Diaphragm 1 and negative chamber isolation diaphragm 4, positive chamber medium channel 2 bear chamber medium channel 7, silicon differential pressure chip 5, chip base 6, wherein poor
The two ends of pedestal 3 are pressed to be respectively differential pressure pedestal forward end 3.1 and differential pressure pedestal negative end 3.2, positive chamber isolation diaphragm 1 is arranged at difference
Pressure pedestal forward end 3.1, negative chamber isolation diaphragm 4 is arranged on differential pressure pedestal negative end 3.2, and positive chamber medium channel 2 is isolated with positive chamber
Diaphragm 1 is connected, and negative chamber medium channel 7 is connected with negative chamber isolation diaphragm 4, and positive chamber medium channel 2 and negative chamber medium channel 7 are arranged at
In differential pressure pedestal 3, positive chamber medium channel 2 is built-in with positive chamber medium 13, and negative chamber medium channel is built-in with negative chamber medium 11, and positive chamber is situated between
Matter 13 is turned on through positive chamber medium channel 2 with positive chamber isolation diaphragm 1, bears chamber medium 11 through negative chamber medium channel 7 and negative chamber barrier film
Piece 4 is turned on, and the one end of silicon differential pressure chip 5 connects positive chamber medium channel 2, the negative chamber medium channel 7 of other end connection, on differential pressure pedestal 3
Portion is additionally provided with the chip base 6 of the negative chamber cross-drilled hole medium channel 8 of band, and silicon differential pressure chip 5 is encapsulated in the chip base 6.This implementation
Using silicone oil as pressure measurement medium in example, medium can also be substituted for fluorocarbon oil or vegetable oil or white oil.
It is as follows that this little differential pressure sensor with the silicon differential pressure chip specifically measures differential pressure process：Due to the pressure of silicone oil
Transmission, allows the measurement film 12 of silicon differential pressure chip 5 to be moved to low pressure side, poor when the overvoltage of differential pressure pedestal forward end 3.1
Press the thrust for producing to cause measurement film 12 to move up, and cause measurement film 12 and upper backstop layer raised 15.1 to overlap, no
Deformation is subjected to displacement again, it is final to realize positive overvoltage protection；Equally when the overvoltage of differential pressure pedestal negative end 3.2, what differential pressure was produced
Thrust causes measurement film 12 to move down, and causes measurement film 12 and lower backstop layer raised 14.1 to overlap, and position no longer occurs
Deformation is moved, so as to protect measurement film, the purpose of protection silicon differential pressure chip is have effectively achieved.
Claims (8)
1. a kind of silicon differential pressure chip, it is characterised in that：Including lower backstop layer (14), upper backstop layer (15) and positioned at lower backstop layer
(14) the moveable measuring diaphragm (12) and in the middle of upper backstop layer (15), lower backstop layer (14) and measure film (12) it
Between and upper backstop layer (15) and measurement film (12) between using Si-Si bonding connection；
Upper backstop layer (15) inner side is provided with backstop layer projection (15.1), and lower backstop layer (14) inner side is provided with lower backstop
Layer is raised (14.1), and gap a is provided between upper backstop layer raised (15.1) and measuring diaphragm (12), and lower backstop layer is raised
(14.1) it is provided with gap b and measurement film (12) between.
2. a kind of silicon differential pressure chip according to claim 1, it is characterised in that：Upper backstop layer (15) and lower backstop layer
(14) upper-lower position is symmetrical.
3. a kind of silicon differential pressure chip according to claim 1 or claim 2, it is characterised in that：The upper backstop layer raised (15.1) and
Lower raised (14.1) upper-lower position of backstop layer is symmetrical.
4. a kind of silicon differential pressure chip according to claim 1, it is characterised in that：The gap a and gap b are in the same size.
5. a kind of little differential pressure sensor with the silicon differential pressure chip, it is characterised in that：Including differential pressure pedestal (3), the differential pressure
The two ends of pedestal (3) are respectively differential pressure pedestal forward end (3.1) and differential pressure pedestal negative end (3.2), and the differential pressure pedestal is positive
End (3.1) is provided with the positive chamber isolation diaphragm (1) that can transmit differential pressure, and differential pressure pedestal negative end (3.2) is provided with and can transmit differential pressure
Negative chamber isolation diaphragm (4), the internal positive chamber medium channel (2) of the positive chamber isolation diaphragm (1) and differential pressure pedestal (3) is connected,
Negative chamber isolation diaphragm (4) the negative chamber medium channel (7) internal with differential pressure pedestal (3) is connected, and the positive chamber medium channel (2) and bears
Chamber medium channel (7) middle setting has inside silicon differential pressure chip (5), differential pressure pedestal (3) to be additionally provided with leads to negative chamber cross-drilled hole medium
The chip base (6) in road (8), the silicon differential pressure chip (5) is placed in chip base (6).
6. a kind of little differential pressure sensor according to claim 5, it is characterised in that：The positive chamber medium channel (2) is built-in just
Chamber medium (13), the positive chamber medium (13) turns on positive chamber isolation diaphragm (1).
7. a kind of little differential pressure sensor according to claim 5, it is characterised in that：The negative chamber medium channel (7) is built-in negative
Chamber medium (11), the negative chamber medium (11) turns on negative chamber isolation diaphragm (4).
8. a kind of little differential pressure sensor according to claim 6 or 7, it is characterised in that：The positive chamber medium (13) and negative chamber
Medium (11) can be silicone oil, fluorocarbon oil, vegetable oil, any one in white oil.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710202854.1A CN106840508A (en) | 2017-03-30 | 2017-03-30 | A kind of little differential pressure sensor of silicon differential pressure chip and the built-in silicon differential pressure chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710202854.1A CN106840508A (en) | 2017-03-30 | 2017-03-30 | A kind of little differential pressure sensor of silicon differential pressure chip and the built-in silicon differential pressure chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106840508A true CN106840508A (en) | 2017-06-13 |
Family
ID=59141253
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710202854.1A Pending CN106840508A (en) | 2017-03-30 | 2017-03-30 | A kind of little differential pressure sensor of silicon differential pressure chip and the built-in silicon differential pressure chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106840508A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109186851A (en) * | 2018-09-27 | 2019-01-11 | 江苏德尔森控股有限公司 | A kind of many reference amounts differential pressure pick-up |
| CN112985682A (en) * | 2019-12-12 | 2021-06-18 | 阿自倍尔株式会社 | Differential pressure measurer |
| CN116337286A (en) * | 2023-03-07 | 2023-06-27 | 上海洛丁森工业自动化设备有限公司 | Sensor bellows and metal capacitive pressure sensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0587664A (en) * | 1991-09-30 | 1993-04-06 | Yokogawa Electric Corp | Semiconductor differential-pressure transmitter |
| JPH0688762A (en) * | 1992-09-07 | 1994-03-29 | Toshiba Corp | Semiconductor pressure sensor |
| US5763784A (en) * | 1996-02-22 | 1998-06-09 | Hartmann & Braun Gmbh & Co. Kg | Differential pressure transducer unit with an overload protection system |
| CN2453229Y (en) * | 2000-10-25 | 2001-10-10 | 朱子鹏 | Measuring range shifting terminal connector for differential voltage transformer for measuirng micro-voltage |
| CN105067182A (en) * | 2015-04-15 | 2015-11-18 | 江苏德尔森传感器科技有限公司 | High-stability monocrystalline silicon differential pressure sensor |
| CN106248296A (en) * | 2016-09-29 | 2016-12-21 | 胡海峰 | The multivariate of pressure transmitter, alternating temperature scaling method |
-
2017
- 2017-03-30 CN CN201710202854.1A patent/CN106840508A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0587664A (en) * | 1991-09-30 | 1993-04-06 | Yokogawa Electric Corp | Semiconductor differential-pressure transmitter |
| JPH0688762A (en) * | 1992-09-07 | 1994-03-29 | Toshiba Corp | Semiconductor pressure sensor |
| US5763784A (en) * | 1996-02-22 | 1998-06-09 | Hartmann & Braun Gmbh & Co. Kg | Differential pressure transducer unit with an overload protection system |
| CN2453229Y (en) * | 2000-10-25 | 2001-10-10 | 朱子鹏 | Measuring range shifting terminal connector for differential voltage transformer for measuirng micro-voltage |
| CN105067182A (en) * | 2015-04-15 | 2015-11-18 | 江苏德尔森传感器科技有限公司 | High-stability monocrystalline silicon differential pressure sensor |
| CN106248296A (en) * | 2016-09-29 | 2016-12-21 | 胡海峰 | The multivariate of pressure transmitter, alternating temperature scaling method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109186851A (en) * | 2018-09-27 | 2019-01-11 | 江苏德尔森控股有限公司 | A kind of many reference amounts differential pressure pick-up |
| CN112985682A (en) * | 2019-12-12 | 2021-06-18 | 阿自倍尔株式会社 | Differential pressure measurer |
| CN116337286A (en) * | 2023-03-07 | 2023-06-27 | 上海洛丁森工业自动化设备有限公司 | Sensor bellows and metal capacitive pressure sensor |
| CN116337286B (en) * | 2023-03-07 | 2024-04-02 | 上海洛丁森工业自动化设备有限公司 | Sensor bellows and metal capacitive pressure sensor |
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