CN106788380B - Asynchronous set D trigger resistant to single event upset - Google Patents
Asynchronous set D trigger resistant to single event upset Download PDFInfo
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- CN106788380B CN106788380B CN201710020134.3A CN201710020134A CN106788380B CN 106788380 B CN106788380 B CN 106788380B CN 201710020134 A CN201710020134 A CN 201710020134A CN 106788380 B CN106788380 B CN 106788380B
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Abstract
The invention is suitable for the technical field of D triggers, and provides a single event upset resistant asynchronous set D trigger. The D flip-flop includes: the dual-mode redundancy circuit comprises a clock signal input circuit, a set signal input circuit, a master latch buffer circuit, a slave latch buffer circuit, a master latch and a slave latch, wherein the master latch and the slave latch are dual-mode redundancy reinforced latches. Compared with the prior art, the invention improves the single event upset resistance of the asynchronous set D trigger by adding the buffer circuit in front of the master latch and the slave latch, and performs dual-mode redundancy reinforcement on the master latch and the slave latch, namely the master latch and the slave latch are separated into the mutually redundant C2The pull-up PMOS tube and the pull-down NMOS tube in the MOS circuit avoid a feedback loop possibly caused by a single-event transient pulse in the slave latch from affecting C in the master latch circuit and the slave latch circuit2The MOS circuit is improved, the control of a clock signal to the circuit is realized through a CMOS transmission gate, and the single event upset resistance of the asynchronous set D trigger is further improved.
Description
Technical Field
The invention belongs to the technical field of D triggers, and particularly relates to a single event upset resistant asynchronous setting D trigger.
Background
There are a lot of high energy particles (protons, electrons, heavy ions, etc.) in the universe space, and after the time sequence circuit in the integrated circuit is bombarded by the high energy particles, the state of the time sequence circuit is possibly inverted, and the effect is called single event upset effect, and the higher the LET (linear energy transfer) value of the single event bombarded integrated circuit is, the more easily the single event upset effect is generated. After the combined circuit in the integrated circuit is bombarded by the high-energy particles, transient electric pulses are possibly generated, the effect is called single-particle transient effect, the higher the LET value of the single-particle bombarded integrated circuit is, the longer the duration of the generated transient electric pulses is, and the easier the electric pulses are collected by a time sequence circuit. If the state of the sequential circuit is turned over by mistake or transient electric pulses generated by single-event transient effect are collected by mistake by the sequential circuit, the integrated circuit can be unstable in operation and even generate fatal errors, which is particularly serious in the fields of spaceflight and military. Therefore, it is increasingly important to reinforce integrated circuits to reduce single event upset and single event transient effects.
The D flip-flop is one of the most used sequential cell structures in an integrated circuit, and the resistance to single event upset determines the single event resistance of the whole integrated circuit. In some integrated circuits, it is desirable that the state of the D flip-flop be controllable, such as to force the D flip-flop to enter a low level. The asynchronous setting structure of the D trigger can be realized by adding an asynchronous setting signal input end and an asynchronous setting circuit on the basis of the structure of the existing D trigger, the asynchronous setting function of the D trigger can be controlled by an asynchronous setting signal, but the asynchronous setting D trigger has poor single event upset resistance and is not suitable for being applied to high-reliability integrated circuit chips.
Disclosure of Invention
The embodiment of the invention provides a single event upset resistant asynchronous setting D trigger, aiming at solving the problem that the single event upset resistance of the asynchronous setting D trigger in the prior art is not high.
The embodiment of the invention provides a single event upset resistant asynchronous set D trigger, which comprises:
the dual-mode redundancy circuit comprises a clock signal input circuit, a set signal input circuit, a master latch buffer circuit, a slave latch buffer circuit, a master latch and a slave latch, wherein the master latch and the slave latch are dual-mode redundancy reinforced latches;
the asynchronous setting D flip-flop is provided with three input ends and two output ends, wherein the three input ends are a clock signal input end CLK, a setting signal input end S and a data signal input end D respectively, and the two output ends are a first output end Q and a second output end QN respectively;
the clock signal input circuit is respectively connected with the clock signal input end CLK, the set signal input circuit, the master latch and the slave latch;
the setting signal input circuit is also respectively connected with the setting signal input end S, the master latch and the slave latch;
the main latch buffer circuit is respectively connected with the data signal input end D and the main latch;
the slave latch buffer circuit is respectively connected with the master latch and the slave latch;
the slave latch is further connected to the first output Q and the second output QN.
Compared with the prior art, the embodiment of the invention has the advantages that the buffer circuit is added in front of the master latch and the slave latch, the single event upset resistance of the asynchronous set D trigger is improved, and dual-mode redundancy reinforcement is carried out on the master latch and the slave latch, namely the master latch and the slave latch are separated into mutually redundant C2The pull-up PMOS tube and the pull-down NMOS tube in the MOS circuit avoid a feedback loop possibly caused by a single-event transient pulse in the slave latch from affecting C in the master latch circuit and the slave latch circuit2The MOS circuit is improved, the control of a clock signal to the circuit is realized through a CMOS transmission gate, and the single event upset resistance of the asynchronous set D trigger is further improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without inventive exercise.
Fig. 1 is a schematic circuit diagram of a C-cell circuit based on a DICE structure in the prior art;
fig. 2 is a schematic structural diagram of an asynchronous set D flip-flop resistant to single event upset according to a first embodiment of the present invention;
fig. 3 is a schematic circuit diagram of a clock signal input circuit in the asynchronous set D flip-flop resistant to single event upset according to the first embodiment of the present invention;
fig. 4 is a schematic circuit structure diagram of a circuit for inputting a middle-set signal in an asynchronous set D flip-flop resistant to single event upset according to a first embodiment of the present invention;
fig. 5 is a schematic circuit structure diagram of a master latch buffer circuit in the asynchronous set D flip-flop resistant to single event upset according to the first embodiment of the present invention;
FIG. 6 is a schematic circuit diagram of a master latch in the asynchronous set D flip-flop with single event upset resistance according to the first embodiment of the present invention;
fig. 7 is a schematic circuit structure diagram of a slave latch buffer circuit in the asynchronous set D flip-flop resistant to single event upset according to the first embodiment of the present invention;
fig. 8 is a schematic circuit diagram of a slave latch in the asynchronous set D flip-flop resistant to single event upset according to the first embodiment of the present invention.
Detailed Description
In order to make the objects, features and advantages of the embodiments of the present invention more obvious and understandable, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, fig. 1 is a schematic circuit diagram of a C-cell circuit based on a DICE structure, the C-cell circuit based on the DICE structure includes:
the circuit comprises a first signal input end IN1, a second signal input end IN2, a signal output end OUT, a P-channel MOS tube MP1, a P-channel MOS tube MP2, an N-channel MOS tube MN1 and an N-channel MOS tube MN 2. The substrates of MP1 and MP2 are connected to power VDD (not shown in the figure), and the substrates of MN1 and MN2 are connected to ground (not shown in the figure).
Wherein, the gate of MP1 is connected to the first signal input terminal IN1, the source is connected to the power VDD, and the drain is connected to the source of MP 2; the gate of MP2 is connected to the second signal input terminal IN2, and the drain is connected to the signal output terminal OUT; the gate of MN1 is connected to the first signal input end IN1, the source is connected to the drain of MN2, and the drain is connected to the signal output end OUT; the gate of MN2 is connected to the second signal input IN2, and the source is connected to ground.
When the logic values of the first signal input terminal IN1 and the second signal input terminal IN2 of the C-cell circuit are the same (both 0 or both 1), the signal output terminal OUT provides the opposite logic value to the first signal input terminal IN1 and the second signal input terminal IN2, and the C-cell circuit behaves as an inverter; when the logic values of the first signal input terminal IN1 and the second signal input terminal IN2 are different (one is 0 and the other is 1), the signal output terminal OUT enters a hold state, providing the logic value IN the previous state. Therefore, the C-cell can be used to shield the node from logic inversion, so as to prevent transient logic inversion of the first signal input terminal IN1 or the second signal input terminal IN2 from affecting the output terminal OUT.
Referring to fig. 2, fig. 2 is a schematic structural diagram of an asynchronous set D flip-flop with single event upset resistance according to a first embodiment of the present invention, where the asynchronous set D flip-flop includes:
the circuit comprises a clock signal input circuit 1, a set signal input circuit 2, a master latch buffer circuit 3, a slave latch buffer circuit 4, a master latch 5 and a slave latch 6, wherein the master latch 5 and the slave latch 6 are dual-mode redundancy reinforced latches.
The asynchronous set D flip-flop has three inputs and two outputs, the three inputs are a clock signal input CLK, a set signal input S and a data signal input D, respectively, and the two outputs are a first output Q and a second output QN, respectively. The clock signal input by the clock signal input terminal CLK is CLK0, the set signal input by the set signal input terminal S is S0, and the data signal input by the data signal input terminal D is D0.
The clock signal input circuit is respectively connected with the clock signal input end CLK, the set signal input circuit, the master latch and the slave latch; the setting signal input circuit is also respectively connected with a setting signal input end S, the master latch and the slave latch; the master latch buffer circuit is respectively connected with the data signal input end D and the master latch; the slave latch buffer circuit is respectively connected with the master latch and the slave latch; the slave latch is also connected to the first output Q and the second output QN.
Referring to fig. 3, fig. 3 is a schematic circuit diagram of a clock signal input circuit in an asynchronous set D flip-flop with single event upset resistance according to a first embodiment of the present invention, where the clock signal input circuit includes:
one input terminal is a clock signal input terminal CLK and one output terminal is CLK 1.
The clock signal input circuit is composed of a first PMOS tube, a second PMOS tube, a first NMOS tube and a second NMOS tube.
The substrates of the first PMOS tube and the second PMOS tube are connected with a power supply VDD (not shown in the figure), and the substrates of the first NMOS tube and the second NMOS tube are grounded (not shown in the figure).
The grid Pg1 of the first PMOS tube is connected with a clock signal input end CLK, the source electrode Ps1 is connected with the power supply VDD, and the drain electrode Pd1 is connected with the source electrode Ps2 of the second PMOS tube; the grid electrode Pg2 of the second PMOS tube is connected with a clock signal input end CLK, and the drain electrode Pd2 is connected with CLK 1; the grid Ng1 of the first NMOS tube is connected with a clock signal input end CLK, the source Ns1 is connected with the drain Nd2 of the second NMOS tube, and the drain Nd1 is connected with CLK 1; the gate Ng2 of the second NMOS transistor is connected to the clock signal input terminal CLK, and the source Ns2 is grounded.
The first PMOS tube, the second PMOS tube, the first NMOS tube and the second NMOS tube form a circuit of a C unit. The circuit is characterized in that when the logic values of input signals of the grids of a first PMOS tube and a second PMOS tube are the same, or when the logic values of the input signals of the grids of a first NMOS tube and a second NMOS tube are the same, an output end outputs an output signal with the logic value opposite to that of the input signal; and when the logic values of the input signals of the gates of the first PMOS tube and the second PMOS tube are different, or when the logic values of the input signals of the gates of the first NMOS tube and the second NMOS tube are different, the logic value of the output signal is kept unchanged. This C-cell structure can ensure that the logic states of the output signal CLK01 at the output terminal CLK1 and the input signal CLK0 at the input terminal CLK are always opposite and are not affected by the single event effect.
Referring to fig. 4, fig. 4 is a schematic circuit structure diagram of a set signal input circuit in an asynchronous set D flip-flop with resistance to single event upset according to a first embodiment of the present invention, where the set signal input circuit includes:
one input terminal is a set signal input terminal S and one output terminal is S1.
The setting signal input circuit is composed of a third PMOS tube, a fourth PMOS tube, a third NMOS tube and a fourth NMOS tube.
The substrates of the third PMOS tube and the fourth PMOS tube are connected with a power supply VDD (not shown in the figure), and the substrates of the third NMOS tube and the fourth NMOS tube are grounded (not shown in the figure).
A grid electrode Pg3 of the third PMOS tube is connected with a set signal input end S, a source electrode Ps3 is connected with a power supply VDD, and a drain electrode Pd3 is connected with a source electrode Ps4 of the fourth PMOS tube; a grid electrode Pg4 of the fourth PMOS tube is connected with a set signal input end S, and a drain electrode Pd4 is connected with S1; the grid Ng3 of the third NMOS tube is connected with a set signal input end S, the source Ns3 is connected with the drain Nd4 of the fourth NMOS tube, and the drain Nd3 is connected with S1; the gate Ng4 of the fourth NMOS transistor is connected to the set signal input terminal S, and the source Ns4 is grounded.
The third PMOS tube, the fourth PMOS tube, the third NMOS tube and the fourth NMOS tube form a circuit of a C unit. The circuit is characterized in that when the logic values of input signals of the grids of a third PMOS tube and a fourth PMOS tube are the same, or when the logic values of the input signals of the grids of a third NMOS tube and a fourth NMOS tube are the same, the output end outputs an output signal with the logic value opposite to that of the input signal; and when the logic values of the input signals of the gates of the third PMOS tube and the fourth PMOS tube are different, or when the logic values of the input signals of the gates of the third NMOS tube and the fourth NMOS tube are different, the logic value of the output signal is kept unchanged before. Therefore, the logic states of the output signal S01 at the output terminal S1 and the input signal S0 at the input terminal S are always opposite, and the output signal is effectively prevented from following single event upset when the logic state of the set signal at the input terminal is inverted.
Referring to fig. 5, fig. 5 is a schematic circuit structure diagram of a master latch buffer circuit in an asynchronous set D flip-flop with single event upset resistance according to a first embodiment of the present invention, where the master latch buffer circuit includes:
one input terminal is a data signal input terminal D, and two output terminals are D1 and D2, respectively.
The main latch buffer circuit is composed of a fifth PMOS tube, a sixth PMOS tube, a seventh PMOS tube, an eighth PMOS tube, a ninth PMOS tube, a tenth PMOS tube, an eleventh PMOS tube, a twelfth PMOS tube, a fifth NMOS tube, a sixth NMOS tube, a seventh NMOS tube, an eighth NMOS tube, a ninth NMOS tube, a tenth NMOS tube, an eleventh NMOS tube and a twelfth NMOS tube.
The substrates of the fifth PMOS tube, the sixth PMOS tube, the seventh PMOS tube, the eighth PMOS tube, the ninth PMOS tube, the tenth PMOS tube, the eleventh PMOS tube and the twelfth PMOS tube are connected with a power supply VDD (not shown in the figure), and the substrates of the fifth NMOS tube, the sixth NMOS tube, the seventh NMOS tube, the eighth NMOS tube, the ninth NMOS tube, the tenth NMOS tube, the eleventh NMOS tube and the twelfth NMOS tube are grounded (not shown in the figure).
A grid Pg5 of the fifth PMOS tube is connected with a data signal input end D, a source electrode Ps5 is connected with a power supply VDD, and a drain electrode Pd5 is respectively connected with a grid Pg6 of the sixth PMOS tube, a drain electrode Nd5 of the fifth NMOS tube and a grid electrode Ng6 of the sixth NMOS tube; a grid Ng5 of the fifth NMOS tube is connected with the data signal input end D, and a source Ns5 is grounded; a source electrode Ps6 of the sixth PMOS tube is connected with a power supply VDD, and a drain electrode Pd6 is respectively connected with a gate electrode Pg7 of the seventh PMOS tube, a drain electrode Nd6 of the sixth NMOS tube and a gate electrode Ng7 of the seventh NMOS tube; the source electrode Ns6 of the sixth NMOS tube is grounded; a source electrode Ps7 of the seventh PMOS tube is connected with a power supply VDD, and a drain electrode Pd7 is respectively connected with a gate electrode Pg8 of the eighth PMOS tube, a drain electrode Nd7 of the seventh NMOS tube and a gate electrode Ng8 of the eighth NMOS tube; the source electrode Ns7 of the seventh NMOS transistor is grounded; the source Ps8 of the eighth PMOS tube is connected with the power supply VDD, and the drain Pd8 is respectively connected with the drains Nd8 and D1 of the eighth NMOS tube; the source Ns8 of the eighth NMOS transistor is grounded.
A grid Pg9 of the ninth PMOS tube is connected with a data signal input end D, a source electrode Ps9 is connected with a power supply VDD, and a drain electrode Pd9 is respectively connected with a grid Pg10 of the tenth PMOS tube, a drain electrode Nd9 of the ninth NMOS tube and a grid electrode Ng12 of the twelfth NMOS tube; a gate Ng9 of the ninth NMOS transistor is respectively connected to a drain Pd10 of the tenth PMOS transistor, a gate Pg11 of the eleventh PMOS transistor, and a drain Nd10 of the tenth NMOS transistor, and a source Ns9 is grounded; a source electrode Ps10 of the tenth PMOS tube is connected with the power supply VDD; a grid Ng10 of the tenth NMOS transistor is respectively connected with a drain Pd11 of the eleventh PMOS transistor, a grid Pg12 of the twelfth PMOS transistor and a drain Nd11 of the eleventh NMOS transistor, and a source Ns10 is grounded; a source electrode Ps11 of the eleventh PMOS tube is connected with a power supply VDD; a grid Ng11 of the eleventh NMOS transistor is respectively connected with a drain Pd12 of the twelfth PMOS transistor, a drain Nd12 of the twelfth NMOS transistor, data signal input ends D and D2, and a source Ns11 is grounded; a source electrode Ps12 of the twelfth PMOS tube is connected with a power supply VDD; the source Ns12 of the twelfth NMOS transistor is grounded.
The DICE unit composed of a ninth PMOS tube, a tenth PMOS tube, an eleventh PMOS tube, a twelfth PMOS tube, a ninth NMOS tube, a tenth NMOS tube, an eleventh NMOS tube and a twelfth NMOS tube in the buffer circuit of the master latch reversely forms a feedback loop to form 4 interlocking phase inverter cascades, and 4 storage nodes with phase inverters are connected back to back in the unit structure: n0, n1, n2, n3, where n0 and n2, n1 and n3 are nodes with the same logic state. Different from the traditional interlocking circuit, the grid electrodes of the PMOS tube and the NMOS tube of each stage in the unit structure are respectively triggered by the output signals of the previous stage and the next stage. Thus, the state of each storage node in the cell structure is controlled by the state of its neighboring storage nodes, and neighboring storage nodes are independent of each other. When only one storage node in the circuit has a voltage change, the storage state of each storage node in the DICE unit will not change due to the feedback effect of other nodes. The fifth PMOS tube, the sixth PMOS tube, the seventh PMOS tube, the eighth PMOS tube, the fifth NMOS tube, the sixth NMOS tube, the seventh NMOS tube and the eighth NMOS tube in the buffer circuit of the master latch respectively form four phase inverters in pairs, and a delay circuit is formed. Therefore, the logic state of the signal D01 obtained at the output end D2 after the input signal D0 of the data signal input end D is buffered by the DICE unit should be consistent with the logic state of the signal D0 obtained at the output end D1 after the input signal D0 is delayed by the inverter, and the single event effect resistance effect is achieved.
Referring to fig. 6, fig. 6 is a schematic circuit diagram of a master latch in an asynchronous set D flip-flop with single event upset resistance according to a first embodiment of the present invention, where the master latch includes:
eleven input terminals and one output terminal, wherein four input terminals are respectively connected with the clock signal input terminal CLK, four input terminals are respectively connected with CLK1, one input terminal is connected with S1, one input terminal is connected with D1, and one input terminal is connected with D2; one output is D3.
The main latch is composed of a thirteenth PMOS tube, a fourteenth PMOS tube, a fifteenth PMOS tube, a sixteenth PMOS tube, a seventeenth PMOS tube, an eighteenth PMOS tube, a nineteenth PMOS tube, a twentieth PMOS tube, a twenty-first PMOS tube, a twenty-second PMOS tube, a twenty-third PMOS tube, a thirteenth NMOS tube, a fourteenth NMOS tube, a fifteenth NMOS tube, a sixteenth NMOS tube, a seventeenth NMOS tube, an eighteenth NMOS tube, a nineteenth NMOS tube, a twentieth NMOS tube, a twenty-first NMOS tube, a twenty-second NMOS tube, a twenty-third NMOS tube and a twenty-fourth NMOS tube.
The substrate of the thirteenth PMOS tube, the fourteenth PMOS tube, the fifteenth PMOS tube, the sixteenth PMOS tube, the seventeenth PMOS tube, the eighteenth PMOS tube, the nineteenth PMOS tube, the twentieth PMOS tube, the twenty-second PMOS tube and the twenty-third PMOS tube is connected with a power supply VDD (not shown in the figure), and the substrate of the thirteenth NMOS tube, the fourteenth NMOS tube, the fifteenth NMOS tube, the sixteenth NMOS tube, the seventeenth NMOS tube, the eighteenth NMOS tube, the nineteenth NMOS tube, the twentieth NMOS tube, the twenty-first NMOS tube, the twenty-second NMOS tube, the twenty-third NMOS tube and the twenty-fourth NMOS tube is grounded (not shown in the figure).
A gate Ng13 of the thirteenth NMOS transistor is connected with CLK, a source Ns13 is respectively connected with sources Ps13 and D1 of the thirteenth PMOS transistor, a drain Nd13 is respectively connected with a drain Pd13 of the thirteenth PMOS transistor, a source Ns16 of the sixteenth NMOS transistor, a source Ps16 of the sixteenth PMOS transistor, a gate Ng17 of the seventeenth NMOS transistor, a gate Pg18 of the eighteenth PMOS transistor, a gate Ng19 of the nineteenth NMOS transistor, and a gate Pg20 of the twentieth PMOS transistor; the grid Pg13 of the thirteenth PMOS tube is connected with the CLK 1; a gate Ng14 of the fourteenth NMOS transistor is connected with CLK, a source Ns14 is respectively connected with source Ps14 and D2 of the fourteenth PMOS transistor, a drain Nd14 is respectively connected with a drain Pd14 of the fourteenth PMOS transistor, a source Ns15 of the fifteenth NMOS transistor, a source Ps15 of the fifteenth PMOS transistor, a gate Pg17 of the seventeenth PMOS transistor, a gate Ng18 of the eighteenth NMOS transistor, a gate Pg19 of the nineteenth PMOS transistor and a gate Ng20 of the twentieth NMOS transistor; the gate Pg14 of the fourteenth PMOS transistor is connected to CLK 1.
A grid Ng15 of the fifteenth NMOS tube is connected with CLK1, and a drain Nd15 is respectively connected with a drain Pd15 of the fifteenth PMOS tube, a drain Pd21 of the twenty-first PMOS tube and a drain Nd21 of the twenty-first NMOS tube; a grid Pg15 of the fifteenth PMOS tube is connected with CLK; a grid Ng16 of the sixteenth NMOS transistor is connected with CLK1, and a drain Nd16 is respectively connected with a drain Pd16 of the sixteenth PMOS transistor, a drain Pd22 of the twenty second PMOS transistor and a drain Nd22 of the twenty second NMOS transistor; the gate Pg16 of the sixteenth PMOS transistor is connected to CLK.
A source electrode Ps17 of the seventeenth PMOS tube is connected with a power supply VDD, and a drain electrode Pd17 is connected with a source electrode Ps18 of the eighteenth PMOS tube; a drain electrode Pd18 of the eighteenth PMOS tube is respectively connected with a drain electrode Nd17 of the seventeenth NMOS tube, a drain electrode Nd23 of the twenty third NMOS tube, a gate electrode Ng21 of the twenty first NMOS tube, a gate electrode Pg22 of the twenty second PMOS tube, a gate electrode Pg23 of the twenty third PMOS tube and a gate electrode Ng24 of the twenty fourth NMOS tube; the gate Ng23 of the twenty-third NMOS transistor is connected with S1, and the source Ns23 is grounded; the source electrode Ns17 of the seventeenth NMOS transistor is connected with the drain electrode Nd18 of the eighteenth NMOS transistor; the source electrode Ns18 of the eighteenth NMOS tube is grounded; a source electrode Ps19 of the nineteenth PMOS tube is connected with the power supply VDD, and a drain electrode Pd19 is connected with a source electrode Ps20 of the twentieth PMOS tube; a drain electrode Pd20 of the twentieth PMOS tube is respectively connected with a drain electrode Nd19 of the nineteenth NMOS tube, a gate electrode Pg21 of the twenty-first PMOS tube and a gate electrode Ng22 of the twenty-second NMOS tube; the source electrode Ns19 of the nineteenth NMOS transistor is connected with the drain electrode Nd20 of the twentieth NMOS transistor; the source Ns20 of the twentieth NMOS transistor is grounded.
A source electrode Ps21 of the twenty-first PMOS tube is connected with a power supply VDD; the source electrode Ns21 of the twenty-first NMOS transistor is grounded; a source electrode Ps22 of the twenty-second PMOS tube is connected with a power supply VDD; the source electrode Ns22 of the twenty-second NMOS transistor is grounded; a source electrode Ps23 of the twenty-third PMOS tube is connected with a power supply VDD, and a drain electrode Pd23 is respectively connected with drain electrodes Nd24 and D3 of the twenty-fourth NMOS tube; the source Ns24 of the twenty-fourth NMOS transistor is grounded.
The master latch is formed by a dual redundant DICE fabric circuit. In the figure, a thirteenth PMOS tube and a thirteenth NMOS tube form a first transmission gate, a fourteenth PMOS tube and a fourteenth NMOS tube form a second transmission gate, a fifteenth PMOS tube and a fifteenth NMOS tube form a third transmission gate, a sixteenth PMOS tube and a sixteenth NMOS tube form a fourth transmission gate, the four transmission gates are controlled by clock signals, and the on-off states of the first transmission gate and the second transmission gate are opposite to the on-off states of the third transmission gate and the fourth transmission gate.
When the logic value of the signal CLK0 input by the CLK port is 1, the logic value of the signal CLK01 input by the CLK1 port is 0, the first and second transmission gates are turned on, and the third and fourth transmission gates are turned off. The port D1 is respectively connected with the gate Ng17 of the seventeenth NMOS transistor and the gate Pg18 of the eighteenth PMOS transistor through a first transmission gate, and the port D2 is respectively connected with the gate Pg17 of the seventeenth PMOS transistor and the gate Ng18 of the eighteenth NMOS transistor through a second transmission gate. The seventeenth PMOS tube, the eighteenth PMOS tube, the seventeenth NMOS tube and the eighteenth NMOS tube form a C unit circuit based on a DICE structure. In the above description of the "master latch buffer circuit in an asynchronous set D flip-flop resistant to single event upset", it is described that the logic states of the D0 signal input from the D1 port and the D01 signal input from the D2 port are identical, and therefore, the C cell circuit corresponds to an inverter, and the signals are output through the node a in the drawing, and then connected to an inverter formed by a twenty-fourth PMOS transistor and a twenty-third NMOS transistor, and the signal D02 is output through the output terminal D3 of the master latch. Due to the existence of the C cell circuit, the logic flips of the input signals D0 and D01 can be effectively prevented from propagating to the output terminal, and at this time, the logic state of the output signal D02 output by D3 should be consistent with that of D0 and D01.
When the logic value of the signal CLK0 input by the CLK port is 0, the logic value of the signal CLK01 input by the CLK1 port is 1, the first and second transmission gates are turned off, and the third and fourth transmission gates are turned on. At this time, the logic states of the nodes a and b are latched by a feedback loop composed of a seventeenth PMOS transistor, an eighteenth PMOS transistor, a nineteenth PMOS transistor, a twentieth PMOS transistor, a twenty first PMOS transistor, a twenty second PMOS transistor, a seventeenth NMOS transistor, an eighteenth NMOS transistor, a nineteenth NMOS transistor, a twentieth NMOS transistor, a twenty first NMOS transistor and a twenty second NMOS transistor, the logic state of the node a is the same as that of the node b, the logic state of the node c is the same as that of the node D, the logic state of the node a is opposite to that of the node c, and the logic state of the output signal D02 of the output end D3 is kept unchanged. The seventeenth PMOS tube, the eighteenth PMOS tube, the seventeenth NMOS tube, the eighteenth NMOS tube, the nineteenth PMOS tube, the twentieth PMOS tube, the nineteenth NMOS tube and the twentieth NMOS tube of the transistor respectively form two C unit circuits, so that logic upset generated by nodes in a feedback loop can be effectively prevented from being transmitted to an output end, and the circuit is ensured to have good single-particle resistance.
Referring to fig. 7, fig. 7 is a schematic circuit diagram of a slave latch buffer circuit in an asynchronous set D flip-flop with single event upset resistance according to a first embodiment of the present invention, where the slave latch buffer circuit includes:
one input end and two output ends, wherein the input end is connected with the D3, and the two output ends are respectively D4 and D5.
The slave latch buffer circuit is composed of a twenty-fourth PMOS tube, a twenty-fifth PMOS tube, a twenty-sixth PMOS tube, a twenty-seventh PMOS tube, a twenty-eighth PMOS tube, a twenty-ninth PMOS tube, a thirtieth PMOS tube, a thirty-eleventh PMOS tube, a twenty-fifth NMOS tube, a twenty-sixth NMOS tube, a twenty-seventh NMOS tube, a twenty-eighth NMOS tube, a twenty-ninth NMOS tube, a thirty-eleventh NMOS tube and a thirty-second NMOS tube.
Substrates of a twenty-fourth PMOS tube, a twenty-fifth PMOS tube, a twenty-sixth PMOS tube, a twenty-seventh PMOS tube, a twenty-eighth PMOS tube, a twenty-ninth PMOS tube, a thirty-sixth PMOS tube and a thirty-first PMOS tube are connected with a power supply VDD (not shown in the figure), and substrates of a twenty-fifth NMOS tube, a twenty-sixth NMOS tube, a twenty-seventh NMOS tube, a twenty-eighth NMOS tube, a twenty-ninth NMOS tube, a thirty-first NMOS tube and a thirty-second NMOS tube are grounded (not shown in the figure).
A grid Pg24 of the twenty-fourth PMOS tube is connected with D3, a source electrode Ps24 is connected with a power supply VDD, and a drain electrode Pd24 is respectively connected with a grid Pg25 of the twenty-fifth PMOS tube, a drain electrode Nd25 of the twenty-fifth NMOS tube and a grid electrode Ng26 of the twenty-sixth NMOS tube; the grid Ng25 of the twenty-fifth NMOS transistor is connected with the D3, and the source Ns25 is grounded; a source electrode Ps25 of the twenty-fifth PMOS tube is connected with a power supply VDD, and a drain electrode Pd25 is respectively connected with a gate electrode Pg26 of the twenty-sixth PMOS tube, a drain electrode Nd26 of the twenty-sixth NMOS tube and a gate electrode Ng27 of the twenty-seventh NMOS tube; the twenty-sixth NMOS transistor source electrode Ns26 is grounded; a source electrode Ps26 of the twenty-sixth PMOS tube is connected with a power supply VDD, and a drain electrode Pd26 is respectively connected with a gate electrode Pg27 of the twenty-seventh PMOS tube, a drain electrode Nd27 of the twenty-seventh NMOS tube and a gate electrode Ng28 of the twenty-eighth NMOS tube; the twenty-seventh NMOS transistor source electrode Ns27 is grounded; a source electrode Ps27 of the twenty-seventh PMOS tube is connected with a power supply VDD, and a drain electrode Pd27 is respectively connected with drain electrodes Nd28 and D4 of the twenty-eighth NMOS tube; the source Ns28 of the twenty-eighth NMOS transistor is grounded.
A grid Pg28 of the twenty-eighth PMOS tube is connected with D3, a source electrode Ps28 is connected with a power supply VDD, and a drain electrode Pd28 is respectively connected with a grid Pg29 of the twenty-ninth PMOS tube, a drain electrode Nd29 of the twenty-ninth NMOS tube and a grid electrode Ng32 of the thirty-second NMOS tube; the grid Ng29 of the twenty-ninth NMOS transistor is respectively connected with the drain Pd29 of the twenty-ninth PMOS transistor, the grid Pg30 of the thirty PMOS transistor and the drain Nd30 of the thirty NMOS transistor, and the source Ns29 is grounded; a source electrode Ps29 of the twenty-ninth PMOS tube is connected with a power supply VDD; the grid Ng30 of the thirtieth NMOS tube is respectively connected with the drain Pd30 of the thirtieth PMOS tube, the grid Pg31 of the thirty-first PMOS tube and the drain Nd31 of the thirty-first NMOS tube, and the source Ns30 is grounded; a source electrode Ps30 of the thirtieth PMOS tube is connected with the power supply VDD; the grid Ng31 of the thirty-first NMOS transistor is respectively connected with the drain Pd31 of the thirty-first PMOS transistor and the drains Nd32, D3 and D5 of the thirty-second NMOS transistor, and the source Ns31 is grounded; a source electrode Ps31 of the thirty-first PMOS tube is connected with a power supply VDD; the source Ns32 of the thirty-second NMOS transistor is grounded.
The working principle of the slave latch buffer circuit is the same as that of the master latch buffer circuit, and the details are not repeated herein.
Referring to fig. 8, fig. 8 is a schematic circuit diagram of a slave latch in an asynchronous set D flip-flop with single event upset resistance according to a first embodiment of the present invention, where the slave latch includes:
the slave latch is provided with eleven input ends and two output ends, wherein four input ends are respectively connected with a clock signal input end CLK, four input ends are respectively connected with CLK1, one input end is connected with S1, one input end is connected with D4, and one input end is connected with D5; the two output ends are respectively a first output end Q and a second output end QN.
The slave latch is composed of a thirty-second PMOS (P-channel metal oxide semiconductor) tube, a thirty-third PMOS tube, a thirty-fourth PMOS tube, a thirty-fifth PMOS tube, a thirty-sixth PMOS tube, a thirty-seventh PMOS tube, a thirty-eighth PMOS tube, a thirty-ninth PMOS tube, a forty-first PMOS tube, a forty-second PMOS tube, a thirty-third NMOS tube, a thirty-fourth NMOS tube, a thirty-fifth NMOS tube, a thirty-sixth NMOS tube, a thirty-seventh NMOS tube, a thirty-eighth NMOS tube, a thirty-ninth NMOS tube, a forty-first NMOS tube, a forty-second NMOS tube, a forty-third NMOS tube and a forty-fourth NMOS tube.
Substrates of thirty-second, thirty-third, thirty-fourth, thirty-fifth, thirty-sixth, thirty-seventh, thirty-eighth, thirty-ninth, forty-PMOS, forty-first, forty-second PMOS transistors are connected with a power supply VDD (not shown), and substrates of thirty-third, thirty-fourth, thirty-fifth, thirty-sixth, thirty-seventh, thirty-eighth, thirty-ninth, forty-NMOS, forty-first, forty-second, forty-third, and forty-fourth NMOS transistors are grounded (not shown).
A gate Ng33 of the thirty-third NMOS transistor is connected with the CLK1, a source Ns33 is connected with sources Ps32 and D4 of the thirty-second PMOS transistor, a drain Nd33 is connected with a drain Pd32 of the thirty-second PMOS transistor, a source Ns36 of the thirty-sixth NMOS transistor, a source Ps35 of the thirty-fifth PMOS transistor, a gate Ng37 of the thirty-seventh NMOS transistor, a gate Pg37 of the thirty-seventh PMOS transistor, a gate Ng39 of the thirty-ninth NMOS transistor, and a gate Pg39 of the thirty-ninth PMOS transistor; a grid Pg32 of the thirty-second PMOS tube is connected with CLK; a gate Ng34 of the thirty-fourth NMOS transistor is connected with the CLK1, a source Ns34 is connected with sources Ps33 and D5 of the thirty-third PMOS transistor, a drain Nd34 is connected with a drain Pd33 of the thirty-third PMOS transistor, a source Ns35 of the thirty-fifth NMOS transistor, a source Ps34 of the thirty-fourth PMOS transistor, a gate Pg36 of the thirty-sixth PMOS transistor, a gate Ng38 of the thirty-eighth NMOS transistor, a gate Pg38 of the thirty-eighth PMOS transistor, and a gate Ng40 of the forty-fourth NMOS transistor; and a grid Pg33 of the thirty-third PMOS tube is connected with CLK.
A gate Ng35 of the thirty-fifth NMOS transistor is connected with CLK, and a drain Nd35 is respectively connected with a drain Pd34 of the thirty-fourth PMOS transistor, a drain Pd40 of the forty-fourth PMOS transistor and a drain Nd41 of the forty-first NMOS transistor; the grid Pg34 of the thirty-fourth PMOS tube is connected with the CLK 1; a gate Ng36 of the thirty-sixth NMOS transistor is connected with CLK, and a drain Nd36 is respectively connected with a drain Pd35 of the thirty-fifth PMOS transistor, a drain Pd41 of the forty-first PMOS transistor and a drain Nd42 of the forty-second NMOS transistor; and the gate Pg35 of the thirty-fifth PMOS tube is connected with the CLK 1.
A source electrode Ps36 of the thirty-sixth PMOS tube is connected with the power supply VDD, and a drain electrode Pd36 is connected with a source electrode Ps37 of the thirty-seventh PMOS tube; a drain electrode Pd37 of the thirty-seventh PMOS tube is respectively connected with a drain electrode Nd37 of the thirty-seventh NMOS tube, a drain electrode Nd43 of the forty-third NMOS tube, a gate electrode Ng41 of the forty-first NMOS tube, a gate electrode Pg41 of the forty-first PMOS tube, a gate electrode Pg42 of the forty-second PMOS tube, a gate electrode Ng44 of the forty-fourth NMOS tube and a second output end QN; the gate Ng43 of the forty-third NMOS transistor is connected with S1, and the source Ns43 is grounded; the source electrode Ns37 of the thirty-seventh NMOS transistor is connected with the drain electrode Nd38 of the thirty-eighth NMOS transistor; the source electrode Ns38 of the thirty-eighth NMOS transistor is grounded; a source electrode Ps38 of the thirty-eighth PMOS tube is connected with a power supply VDD, and a drain electrode Pd38 is connected with a source electrode Ps39 of the thirty-ninth PMOS tube; a drain Pd39 of the thirty-ninth PMOS tube is respectively connected with a drain Nd39 of the thirty-ninth NMOS tube, a gate Pg40 of the forty-ninth PMOS tube and a gate Ng42 of the forty-second NMOS tube; the source electrode Ns39 of the thirty-ninth NMOS transistor is connected with the drain electrode Nd40 of the forty-ninth NMOS transistor; the source Ns40 of the fortieth NMOS transistor is grounded.
A source electrode Ps40 of the forty-fifth PMOS tube is connected with the power supply VDD; the source Ns41 of the forty-first NMOS transistor is grounded; a source electrode Ps41 of the forty-first PMOS tube is connected with a power supply VDD; the source electrode Ns42 of the forty-second NMOS transistor is grounded; a source electrode Ps42 of the forty-second PMOS tube is connected with a power supply VDD, and a drain electrode Pd42 is respectively connected with a drain electrode Nd44 of the forty-fourth NMOS tube and a first output end Q; the source Ns44 of the forty-fourth NMOS transistor is grounded.
The working principle of the slave latch is the same as that of the master latch, and the description is omitted here.
In the patent, the control of the setting signal to the circuit output is asynchronous with the clock signal, namely the control of the setting signal to the circuit output is irrelevant to the state of the clock signal. When the logic value of CLK0 changes from 1 to 0, if the set signal S0 is 0, then there is no set operation; if the set signal S0 is equal to 1, then S1 is equal to 0, the twenty-third NMOS transistor in the master latch is turned on, the drain voltage of the twenty-third NMOS transistor is pulled low to a low potential by the ground voltage, and the output signal D02 is set to 1 by the feedback loop. At this time, the two transmission gates connected to the slave latch input terminals D4 and D5 in the slave latch are in the on state, so the output signal of the slave latch output terminal Q is also set to 1, and the set operation of the circuit is completed. The state of the clock signal does not affect the control of the set signal on the circuit output in this process
Compared with the prior art, the asynchronous set D trigger capable of resisting single event upset provided by the embodiment of the invention has the advantages that the buffer circuit is added in front of the master latch and the slave latch, the single event upset resistance of the asynchronous set D trigger is improved, dual-mode redundancy reinforcement is carried out on the master latch and the slave latch, namely the asynchronous set D trigger is separated into the mutually redundant C latches2The pull-up PMOS tube and the pull-down NMOS tube in the MOS circuit avoid a feedback loop possibly caused by a single-event transient pulse in the slave latch from affecting C in the master latch circuit and the slave latch circuit2The MOS circuit is improved, the control of a clock signal to the circuit is realized through a CMOS transmission gate, and the single event upset resistance of the asynchronous set D trigger is further improved.
It should be noted that, for the sake of simplicity, the above-mentioned method embodiments are described as a series of acts or combinations, but those skilled in the art should understand that the present invention is not limited by the described order of acts, as some steps may be performed in other orders or simultaneously according to the present invention. Further, those skilled in the art will appreciate that the embodiments described in the specification are presently preferred and that no acts or modules are necessarily required of the invention.
In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
The above description is provided for the single event upset resistant asynchronous set D flip-flop, and for those skilled in the art, there may be variations in the specific implementation and application scope according to the ideas of the embodiments of the present invention, and in summary, the content of the present specification should not be construed as limiting the present invention.
Claims (6)
1. An asynchronous set D flip-flop resistant to single event upset, the asynchronous set D flip-flop comprising:
the dual-mode redundancy circuit comprises a clock signal input circuit, a set signal input circuit, a master latch buffer circuit, a slave latch buffer circuit, a master latch and a slave latch, wherein the master latch and the slave latch are dual-mode redundancy reinforced latches;
the asynchronous setting D flip-flop is provided with three input ends and two output ends, wherein the three input ends are a clock signal input end CLK, a setting signal input end S and a data signal input end D respectively, and the two output ends are a first output end Q and a second output end QN respectively;
the clock signal input circuit is respectively connected with the clock signal input end CLK, the set signal input circuit, the master latch and the slave latch;
the setting signal input circuit is also respectively connected with the setting signal input end S, the master latch and the slave latch;
the main latch buffer circuit is respectively connected with the data signal input end D and the main latch;
the slave latch buffer circuit is respectively connected with the master latch and the slave latch;
the slave latch is further connected with the first output end Q and the second output end QN;
wherein said master latch buffer circuit has an input terminal and two output terminals, one of said input terminals being said data signal input terminal D, and two of said output terminals being D1 and D2, respectively;
the master latch buffer circuit consists of a fifth PMOS (P-channel metal oxide semiconductor) tube, a sixth PMOS tube, a seventh PMOS tube, an eighth PMOS tube, a ninth PMOS tube, a tenth PMOS tube, an eleventh PMOS tube, a twelfth PMOS tube, a fifth NMOS tube, a sixth NMOS tube, a seventh NMOS tube, an eighth NMOS tube, a ninth NMOS tube, a tenth NMOS tube, an eleventh NMOS tube and a twelfth NMOS tube;
the substrates of the fifth PMOS tube, the sixth PMOS tube, the seventh PMOS tube, the eighth PMOS tube, the ninth PMOS tube, the tenth PMOS tube, the eleventh PMOS tube and the twelfth PMOS tube are connected with a power supply VDD, and the substrates of the fifth NMOS tube, the sixth NMOS tube, the seventh NMOS tube, the eighth NMOS tube, the ninth NMOS tube, the tenth NMOS tube, the eleventh NMOS tube and the twelfth NMOS tube are grounded;
the grid Pg5 of the fifth PMOS tube is connected with the data signal input end D, the source electrode Ps5 is connected with the power supply VDD, and the drain electrode Pd5 is respectively connected with the grid Pg6 of the sixth PMOS tube, the drain electrode Nd5 of the fifth NMOS tube and the grid electrode Ng6 of the sixth NMOS tube; the grid Ng5 of the fifth NMOS transistor is connected with the data signal input end D, and the source Ns5 is grounded; a source electrode Ps6 of the sixth PMOS tube is connected with a power supply VDD, and a drain electrode Pd6 of the sixth PMOS tube is respectively connected with a gate electrode Pg7 of the seventh PMOS tube, a drain electrode Nd6 of the sixth NMOS tube and a gate electrode Ng7 of the seventh NMOS tube; the source electrode Ns6 of the sixth NMOS tube is grounded; a source electrode Ps7 of the seventh PMOS tube is connected with a power supply VDD, and a drain electrode Pd7 of the seventh PMOS tube is respectively connected with a gate electrode Pg8 of the eighth PMOS tube, a drain electrode Nd7 of the seventh NMOS tube and a gate electrode Ng8 of the eighth NMOS tube; the source electrode Ns7 of the seventh NMOS transistor is grounded; the source electrode Ps8 of the eighth PMOS tube is connected with a power supply VDD, and the drain electrode Pd8 is respectively connected with the drain electrodes Nd8 and D1 of the eighth NMOS tube; the source electrode Ns8 of the eighth NMOS transistor is grounded;
a gate Pg9 of the ninth PMOS transistor is connected to the data signal input terminal D, a source Ps9 is connected to the power supply VDD, and a drain Pd9 is connected to a gate Pg10 of the tenth PMOS transistor, a drain Nd9 of the ninth NMOS transistor, and a gate Ng12 of the twelfth NMOS transistor, respectively; the gate Ng9 of the ninth NMOS transistor is respectively connected to the drain Pd10 of the tenth PMOS transistor, the gate Pg11 of the eleventh PMOS transistor, and the drain Nd10 of the tenth NMOS transistor, and the source Ns9 is grounded; a source electrode Ps10 of the tenth PMOS tube is connected with a power supply VDD; the grid Ng10 of the tenth NMOS transistor is respectively connected with the drain Pd11 of the eleventh PMOS transistor, the grid Pg12 of the twelfth PMOS transistor and the drain Nd11 of the eleventh NMOS transistor, and the source Ns10 is grounded; a source electrode Ps11 of the eleventh PMOS tube is connected with a power supply VDD; the grid Ng11 of the eleventh NMOS transistor is respectively connected with the drain Pd12 of the twelfth PMOS transistor, the drain Nd12 of the twelfth NMOS transistor, the data signal input ends D and D2, and the source Ns11 is grounded; a source electrode Ps12 of the twelfth PMOS tube is connected with a power supply VDD; the source Ns12 of the twelfth NMOS transistor is grounded.
2. The asynchronous set D flip-flop of claim 1, wherein said clock signal input circuit has an input and an output, one of said input being said clock signal input CLK and one of said output being CLK 1;
the clock signal input circuit is composed of a first PMOS tube, a second PMOS tube, a first NMOS tube and a second NMOS tube;
the substrates of the first PMOS tube and the second PMOS tube are connected with a power supply VDD, and the substrates of the first NMOS tube and the second NMOS tube are grounded;
the grid electrode Pg1 of the first PMOS tube is connected with the clock signal input end CLK, the source electrode Ps1 is connected with the power supply VDD, and the drain electrode Pd1 is connected with the source electrode Ps2 of the second PMOS tube; the grid electrode Pg2 of the second PMOS tube is connected with the clock signal input end CLK, and the drain electrode Pd2 is connected with CLK 1; the gate Ng1 of the first NMOS tube is connected with the clock signal input end CLK, the source Ns1 is connected with the drain Nd2 of the second NMOS tube, and the drain Nd1 is connected with CLK 1; the gate Ng2 of the second NMOS transistor is connected to the clock signal input terminal CLK, and the source Ns2 is grounded.
3. The asynchronous set D flip-flop of claim 2, wherein said set signal input circuit has an input and an output, one of said input being said set signal input S and one of said output being S1;
the setting signal input circuit is composed of a third PMOS tube, a fourth PMOS tube, a third NMOS tube and a fourth NMOS tube;
the substrates of the third PMOS tube and the fourth PMOS tube are connected with a power supply VDD, and the substrates of the third NMOS tube and the fourth NMOS tube are grounded;
the grid electrode Pg3 of the third PMOS tube is connected with the set signal input end S, the source electrode Ps3 is connected with the power supply VDD, and the drain electrode Pd3 is connected with the source electrode Ps4 of the fourth PMOS tube; the grid Pg4 of the fourth PMOS tube is connected with the set signal input end S, and the drain Pd4 is connected with S1; the gate Ng3 of the third NMOS transistor is connected to the set signal input terminal S, the source Ns3 is connected to the drain Nd4 of the fourth NMOS transistor, and the drain Nd3 is connected to S1; the gate Ng4 of the fourth NMOS transistor is connected to the set signal input terminal S, and the source Ns4 is grounded.
4. The asynchronous set D flip-flop of claim 3, wherein said master latch has eleven inputs and one output, four of said inputs being connected to said clock signal input CLK, four of said inputs being connected to CLK1, one of said inputs being connected to S1, one of said inputs being connected to D1, and one of said inputs being connected to D2; one of the output terminals is D3;
the main latch is composed of a thirteenth PMOS tube, a fourteenth PMOS tube, a fifteenth PMOS tube, a sixteenth PMOS tube, a seventeenth PMOS tube, an eighteenth PMOS tube, a nineteenth PMOS tube, a twentieth PMOS tube, a twenty-first PMOS tube, a twenty-second PMOS tube, a twenty-third PMOS tube, a thirteenth NMOS tube, a fourteenth NMOS tube, a fifteenth NMOS tube, a sixteenth NMOS tube, a seventeenth NMOS tube, an eighteenth NMOS tube, a nineteenth NMOS tube, a twentieth NMOS tube, a twenty-first NMOS tube, a twenty-second NMOS tube, a twenty-third NMOS tube and a twenty-fourth NMOS tube;
the thirteenth PMOS tube, the fourteenth PMOS tube, the fifteenth PMOS tube, the sixteenth PMOS tube, the seventeenth PMOS tube, the eighteenth PMOS tube, the nineteenth PMOS tube, the twentieth PMOS tube, the twenty-first PMOS tube, the twenty-second PMOS tube and the twenty-third PMOS tube have substrates connected with a power supply VDD, and the thirteenth NMOS tube, the fourteenth NMOS tube, the fifteenth NMOS tube, the sixteenth NMOS tube, the seventeenth NMOS tube, the eighteenth NMOS tube, the nineteenth NMOS tube, the twentieth NMOS tube, the twenty-first NMOS tube, the twenty-second NMOS tube, the twenty-third NMOS tube and the twenty-fourth NMOS tube have substrates grounded;
the gate Ng13 of the thirteenth NMOS transistor is connected with CLK, the source Ns13 is connected with the sources Ps13 and D1 of the thirteenth PMOS transistor, and the drain Nd13 is connected with the drain Pd13 of the thirteenth PMOS transistor, the source Ns16 of the sixteenth NMOS transistor, the source Ps16 of the sixteenth PMOS transistor, the gate Ng17 of the seventeenth NMOS transistor, the gate Pg18 of the eighteenth PMOS transistor, the gate Ng19 of the nineteenth NMOS transistor, and the gate Pg20 of the twentieth PMOS transistor; the gate Pg13 of the thirteenth PMOS tube is connected with the CLK 1; the gate Ng14 of the fourteenth NMOS transistor is connected with CLK, the source Ns14 is respectively connected with the source Ps14 and D2 of the fourteenth PMOS transistor, and the drain Nd14 is respectively connected with the drain Pd14 of the fourteenth PMOS transistor, the source Ns15 of the fifteenth NMOS transistor, the source Ps15 of the fifteenth PMOS transistor, the gate Pg17 of the seventeenth PMOS transistor, the gate Ng18 of the eighteenth NMOS transistor, the gate Pg19 of the nineteenth PMOS transistor, and the gate Ng20 of the twentieth NMOS transistor; the grid Pg14 of the fourteenth PMOS tube is connected with the CLK 1;
a gate Ng15 of the fifteenth NMOS transistor is connected with a CLK1, and a drain Nd15 of the fifteenth NMOS transistor is respectively connected with a drain Pd15 of the fifteenth PMOS transistor, a drain Pd21 of the twenty-first PMOS transistor and a drain Nd21 of the twenty-first NMOS transistor; a grid Pg15 of the fifteenth PMOS tube is connected with CLK; a gate Ng16 of the sixteenth NMOS transistor is connected to CLK1, and a drain Nd16 is connected to a drain Pd16 of the sixteenth PMOS transistor, a drain Pd22 of the twenty second PMOS transistor, and a drain Nd22 of the twenty second NMOS transistor, respectively; the grid Pg16 of the sixteenth PMOS tube is connected with CLK;
a source electrode Ps17 of the seventeenth PMOS tube is connected with a power supply VDD, and a drain electrode Pd17 is connected with a source electrode Ps18 of the eighteenth PMOS tube; a drain electrode Pd18 of the eighteenth PMOS tube is respectively connected with a drain electrode Nd17 of the seventeenth NMOS tube, a drain electrode Nd23 of the twenty third NMOS tube, a gate electrode Ng21 of the twenty first NMOS tube, a gate electrode Pg22 of the twenty second PMOS tube, a gate electrode Pg23 of the twenty third PMOS tube and a gate electrode Ng24 of the twenty fourth NMOS tube; the gate Ng23 of the twenty-third NMOS transistor is connected with S1, and the source Ns23 is grounded; the source electrode Ns17 of the seventeenth NMOS tube is connected with the drain electrode Nd18 of the eighteenth NMOS tube; the source electrode Ns18 of the eighteenth NMOS tube is grounded; a source electrode Ps19 of the nineteenth PMOS tube is connected with a power supply VDD, and a drain electrode Pd19 is connected with a source electrode Ps20 of the twentieth PMOS tube; the drain electrode Pd20 of the twentieth PMOS tube is respectively connected with the drain electrode Nd19 of the nineteenth NMOS tube, the gate electrode Pg21 of the twenty-first PMOS tube and the gate electrode Ng22 of the twenty-second NMOS tube; the source electrode Ns19 of the nineteenth NMOS transistor is connected with the drain electrode Nd20 of the twentieth NMOS transistor; the source electrode Ns20 of the twentieth NMOS tube is grounded;
a source electrode Ps21 of the twenty-first PMOS tube is connected with a power supply VDD; the source electrode Ns21 of the twenty-first NMOS transistor is grounded; a source electrode Ps22 of the twenty-second PMOS tube is connected with a power supply VDD; the source electrode Ns22 of the twenty-second NMOS transistor is grounded; a source electrode Ps23 of the twenty-third PMOS tube is connected with a power supply VDD, and a drain electrode Pd23 is respectively connected with drain electrodes Nd24 and D3 of the twenty-fourth NMOS tube; the source Ns24 of the twenty-fourth NMOS transistor is grounded.
5. The asynchronous set D flip-flop against single event upset of claim 4, wherein said slave latch buffer circuit has an input and two outputs, one of said inputs being connected to D3 and two of said outputs being D4 and D5, respectively;
the slave latch buffer circuit consists of a twenty-fourth PMOS (P-channel metal oxide semiconductor) tube, a twenty-fifth PMOS tube, a twenty-sixth PMOS tube, a twenty-seventh PMOS tube, a twenty-eighth PMOS tube, a twenty-ninth PMOS tube, a thirtieth PMOS tube, a thirty-eleventh PMOS tube, a twenty-fifth NMOS tube, a twenty-sixth NMOS tube, a twenty-seventh NMOS tube, a twenty-eighth NMOS tube, a twenty-ninth NMOS tube, a thirty-eleventh NMOS tube and a thirty-second NMOS tube;
substrates of the twenty-fourth PMOS tube, the twenty-fifth PMOS tube, the twenty-sixth PMOS tube, the twenty-seventh PMOS tube, the twenty-eighth PMOS tube, the twenty-ninth PMOS tube, the thirty-sixth PMOS tube and the thirty-eleventh PMOS tube are connected with a power supply VDD, and substrates of the twenty-fifth NMOS tube, the twenty-sixth NMOS tube, the twenty-seventh NMOS tube, the twenty-eighth NMOS tube, the twenty-ninth NMOS tube, the thirty-eighth NMOS tube, the thirty-eleventh NMOS tube and the thirty-second NMOS tube are grounded;
a grid Pg24 of the twenty-fourth PMOS tube is connected with D3, a source electrode Ps24 is connected with a power supply VDD, and a drain electrode Pd24 is respectively connected with a grid Pg25 of the twenty-fifth PMOS tube, a drain electrode Nd25 of the twenty-fifth NMOS tube and a grid electrode Ng26 of the twenty-sixth NMOS tube; the gate Ng25 of the twenty-fifth NMOS transistor is connected with the D3, and the source Ns25 is grounded; a source electrode Ps25 of the twenty-fifth PMOS tube is connected with a power supply VDD, and a drain electrode Pd25 of the twenty-sixth PMOS tube is respectively connected with a gate electrode Pg26 of the twenty-sixth PMOS tube, a drain electrode Nd26 of the twenty-sixth NMOS tube and a gate electrode Ng27 of the twenty-seventh NMOS tube; the twenty-sixth NMOS transistor source electrode Ns26 is grounded; a source electrode Ps26 of the twenty-sixth PMOS tube is connected with a power supply VDD, and a drain electrode Pd26 is respectively connected with a gate electrode Pg27 of the twenty-seventh PMOS tube, a drain electrode Nd27 of the twenty-seventh NMOS tube and a gate electrode Ng28 of the twenty-eighth NMOS tube; the twenty-seventh NMOS transistor source electrode Ns27 is grounded; a source electrode Ps27 of the twenty-seventh PMOS tube is connected with a power supply VDD, and a drain electrode Pd27 is respectively connected with drain electrodes Nd28 and D4 of the twenty-eighth NMOS tube; the source electrode Ns28 of the twenty-eighth NMOS transistor is grounded;
a grid Pg28 of the twenty-eighth PMOS tube is connected with D3, a source electrode Ps28 is connected with a power supply VDD, and a drain electrode Pd28 is respectively connected with a grid Pg29 of the twenty-ninth PMOS tube, a drain electrode Nd29 of the twenty-ninth NMOS tube and a grid electrode Ng32 of the thirty-second NMOS tube; the grid Ng29 of the twenty-ninth NMOS transistor is respectively connected with the drain Pd29 of the twenty-ninth PMOS transistor, the grid Pg30 of the thirty-ninth PMOS transistor and the drain Nd30 of the thirty-NMOS transistor, and the source Ns29 is grounded; a source electrode Ps29 of the twenty-ninth PMOS tube is connected with a power supply VDD; the gate Ng30 of the thirtieth NMOS transistor is respectively connected with the drain Pd30 of the thirtieth PMOS transistor, the gate Pg31 of the thirty-first PMOS transistor and the drain Nd31 of the thirty-first NMOS transistor, and the source Ns30 is grounded; a source electrode Ps30 of the thirty-fifth PMOS tube is connected with a power supply VDD; the gate Ng31 of the thirty-first NMOS transistor is respectively connected with the drain Pd31 of the thirty-first PMOS transistor and the drains Nd32, D3 and D5 of the thirty-second NMOS transistor, and the source Ns31 is grounded; a source electrode Ps31 of the thirty-first PMOS tube is connected with a power supply VDD; the source Ns32 of the thirty-second NMOS transistor is grounded.
6. The asynchronous set D flip-flop of claim 5, wherein said slave latch has eleven inputs and two outputs, four of said inputs being connected to said clock signal input CLK, four of said inputs being connected to CLK1, one of said inputs being connected to S1, one of said inputs being connected to D4, and one of said inputs being connected to D5; the two output ends are the first output end Q and the second output end QN respectively;
the slave latch is composed of a thirty-second PMOS (P-channel metal oxide semiconductor) tube, a thirty-third PMOS tube, a thirty-fourth PMOS tube, a thirty-fifth PMOS tube, a thirty-sixth PMOS tube, a thirty-seventh PMOS tube, a thirty-eighth PMOS tube, a thirty-ninth PMOS tube, a forty-first PMOS tube, a forty-second PMOS tube, a thirty-third NMOS tube, a thirty-fourth NMOS tube, a thirty-fifth NMOS tube, a thirty-sixth NMOS tube, a thirty-seventh NMOS tube, a thirty-eighth NMOS tube, a thirty-ninth NMOS tube, a forty-fourth NMOS tube, a forty-second NMOS tube, a forty-third NMOS tube and a forty-fourth NMOS tube;
the thirty-second PMOS tube, the thirty-third PMOS tube, the thirty-fourth PMOS tube, the thirty-fifth PMOS tube, the thirty-sixth PMOS tube, the thirty-seventh PMOS tube, the thirty-eighth PMOS tube, the thirty-ninth PMOS tube, the forty-first PMOS tube and the forty-second PMOS tube are connected with a power supply VDD through a substrate, and the thirty-third NMOS tube, the thirty-fourth NMOS tube, the thirty-fifth NMOS tube, the thirty-sixth NMOS tube, the thirty-seventh NMOS tube, the thirty-eighth NMOS tube, the thirty-ninth NMOS tube, the forty-first NMOS tube, the forty-second NMOS tube, the forty-third NMOS tube and the substrate of the fourth NMOS tube are grounded;
the gate Ng33 of the thirty-third NMOS transistor is connected with CLK1, the sources Ns33 are respectively connected with the sources Ps32 and D4 of the thirty-second PMOS transistor, the drain Nd33 is respectively connected with the drain Pd32 of the thirty-second PMOS transistor, the source Ns36 of the thirty-sixth NMOS transistor, the source Ps35 of the thirty-fifth PMOS transistor, the gate Ng37 of the thirty-seventh NMOS transistor, the gate Pg37 of the thirty-seventh PMOS transistor, the gate Ng39 of the thirty-ninth NMOS transistor, and the gate Pg39 of the thirty-ninth PMOS transistor; the grid Pg32 of the thirty-second PMOS tube is connected with CLK; the gate Ng34 of the thirty-fourth NMOS transistor is connected with the CLK1, the sources Ns34 are respectively connected with the sources Ps33 and D5 of the thirty-third PMOS transistor, the drain Nd34 is respectively connected with the drain Pd33 of the thirty-third PMOS transistor, the source Ns35 of the thirty-fifth NMOS transistor, the source Ps34 of the thirty-fourth PMOS transistor, the gate Pg36 of the thirty-sixth PMOS transistor, the gate Ng38 of the thirty-eighth NMOS transistor, the gate Pg38 of the thirty-eighth PMOS transistor and the gate Ng40 of the forty NMOS transistor; the grid Pg33 of the thirty-third PMOS tube is connected with CLK;
the gate Ng35 of the thirty-fifth NMOS transistor is connected with CLK, and the drain Nd35 is respectively connected with the drain Pd34 of the thirty-fourth PMOS transistor, the drain Pd40 of the forty-first PMOS transistor and the drain Nd41 of the forty-first NMOS transistor; the grid Pg34 of the thirty-fourth PMOS tube is connected with the CLK 1; the gate Ng36 of the thirty-sixth NMOS transistor is connected with CLK, and the drain Nd36 is respectively connected with the drain Pd35 of the thirty-fifth PMOS transistor, the drain Pd41 of the forty-first PMOS transistor and the drain Nd42 of the forty-second NMOS transistor; the gate Pg35 of the thirty-fifth PMOS tube is connected with the CLK 1;
a source electrode Ps36 of the thirty-sixth PMOS tube is connected with a power supply VDD, and a drain electrode Pd36 is connected with a source electrode Ps37 of the thirty-seventh PMOS tube; the drain electrode Pd37 of the thirty-seventh PMOS tube is respectively connected with the drain electrode Nd37 of the thirty-seventh NMOS tube, the drain electrode Nd43 of the forty-third NMOS tube, the gate electrode Ng41 of the forty-first NMOS tube, the gate electrode Pg41 of the forty-first PMOS tube, the gate electrode Pg42 of the forty-second PMOS tube, the gate electrode Ng44 of the forty-fourth NMOS tube and the second output end QN; the gate Ng43 of the forty-third NMOS transistor is connected with S1, and the source Ns43 is grounded; the source electrode Ns37 of the thirty-seventh NMOS transistor is connected with the drain electrode Nd38 of the thirty-eighth NMOS transistor; the source electrode Ns38 of the thirty-eighth NMOS transistor is grounded; a source electrode Ps38 of the thirty-eighth PMOS tube is connected with a power supply VDD, and a drain electrode Pd38 is connected with a source electrode Ps39 of the thirty-ninth PMOS tube; the drain Pd39 of the thirty-ninth PMOS tube is respectively connected with the drain Nd39 of the thirty-ninth NMOS tube, the gate Pg40 of the forty-ninth PMOS tube and the gate Ng42 of the forty-second NMOS tube; the source electrode Ns39 of the thirty-ninth NMOS transistor is connected with the drain electrode Nd40 of the forty-ninth NMOS transistor; the source electrode Ns40 of the fortieth NMOS tube is grounded;
a source electrode Ps40 of the forty-fifth PMOS tube is connected with a power supply VDD; the source electrode Ns41 of the forty-first NMOS transistor is grounded; the source electrode Ps41 of the forty-first PMOS tube is connected with a power supply VDD; the source electrode Ns42 of the forty-second NMOS transistor is grounded; a source electrode Ps42 of the forty-second PMOS tube is connected with a power supply VDD, and a drain electrode Pd42 is respectively connected with a drain electrode Nd44 of the forty-fourth NMOS tube and the first output end Q; the source Ns44 of the forty-fourth NMOS transistor is grounded.
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| CN108449071B (en) * | 2018-03-28 | 2022-03-08 | 上海华虹宏力半导体制造有限公司 | Latch capable of resisting two-bit node overturning |
| CN111525919B (en) * | 2020-05-27 | 2023-09-26 | 上海微阱电子科技有限公司 | Redundant structure with feedback correction |
| CN114172492B (en) * | 2021-11-24 | 2023-10-03 | 北京时代民芯科技有限公司 | Low-overhead single event upset resistant reinforcement trigger circuit structure |
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