CN106784410B - A kind of flexible display panels and preparation method thereof - Google Patents

A kind of flexible display panels and preparation method thereof Download PDF

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CN106784410B
CN106784410B CN201710103447.5A CN201710103447A CN106784410B CN 106784410 B CN106784410 B CN 106784410B CN 201710103447 A CN201710103447 A CN 201710103447A CN 106784410 B CN106784410 B CN 106784410B
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display panels
flexible display
preparation
cathodic protection
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CN106784410A (en
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彭斯敏
金江江
徐湘伦
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to US15/567,566 priority patent/US10468630B2/en
Priority to PCT/CN2017/082916 priority patent/WO2018152967A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/813—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/822—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/361—Temperature
    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The present invention relates to the preparation methods of technical field of liquid crystal display, especially flexible display panels to control 650~750 DEG C of temperature, make to form organic dimer steam on the anode layer polymer as microcavity regulating course including the use of chemical vapor deposition method；The structural formula of organic dimer is as shown in Equation 1, wherein the R is represented as at least one of H, F, Cl, Br.Cathodic protection layer and encapsulation filled layer can also be obtained using identical material and step.The present invention prepares flexible OLED microcavity regulating course, cathodic protection layer and encapsulation filled layer using same material, can reduce process difficulty.

Description

A kind of flexible display panels and preparation method thereof
Technical field
The invention belongs to technical field of liquid crystal display, in particular, a kind of be related to flexible display panels and its preparation side Method.
Background technique
As the development of OLED display technology reaches its maturity, the majority of consumers experienced OLED show it is aobvious with traditional LC D The greatest differences shown, consequent are increasing rapidly for the consumption market OLED.Due to the self luminous characteristic of OLED, so that response The features such as time is short, high contrast, wide viewing angle, wide colour gamut, display panel are lightening, bendable folding endurance is achieved.Especially The bendable folding endurance of OLED display panel brings subversive concept to consumer, therefore Flexible (bent) OLED is close It is the mainstream of industry development over year.
Then, bent display panel also forms challenge to the material and preparation process of electronic equipment itself device. In traditional flexible OLED making technology, microcavity regulating course, cathodic protection layer and encapsulation filled layer are all using different materials With making technology production, process is relatively cumbersome, and not only material category is brought more prepares that equipment is more, reaction condition is various and each Shipment and delivery cost between link is also higher, is not conducive to the reduction of production costs.
Summary of the invention
In order to solve the above-mentioned problems of the prior art, the present invention provides a kind of preparation method of flexible display panels, Preparation process, save the cost can be greatly simplified.
The preparation method of this flexible display panels, includes the following steps:
Anode layer is formed on substrate；
Using chemical vapor deposition method, controls 650~750 DEG C of temperature, makes to organic dimer steam in the anode Polymer is formed as microcavity regulating course on layer；The structural formula of organic dimer is as shown in Equation 1:
Wherein, the R is represented as at least one of H, F, Cl, Br；
Hole injection layer is formed on the microcavity regulating course；
Organic emission layer is formed on the hole injection layer；
Electron transfer layer is formed in the organic emission layer；
Cathode layer is formed on the electron transport layer.
Wherein, further include using chemical vapor deposition method, 100~150 DEG C of control temperature by organic dimer deposit to Cathodic protection layer is used as on the cathode layer.
Wherein, further includes:
Protective layer preparation: forming n-layer protective layer on the cathodic protection layer, and n is the integer greater than 0；The protective layer Including the water blocking layer and buffer layer being sequentially depositing from bottom to up；
The water blocking layer at the top of deposition on n-th layer protective layer.
Wherein, further include the preparation step for encapsulating filled layer after completing the protective layer preparation step: utilizing chemical gaseous phase Deposition method, 100~150 DEG C of temperature of control deposit organic dimer to the protective layer.
Wherein, the chemical vapor deposition method includes plasma enhanced chemical vapor deposition, high-density plasma Any one of chemical vapor deposition, inductively coupled plasma chemical vapor deposition.
The present invention also provides this flexible display panels, include at least from bottom to up: substrate, anode layer, microcavity regulating course, Hole injection layer, organic emission layer, electron transfer layer and cathode layer, which is characterized in that the microcavity regulating course material is organic The polymer formulae of the polymer that dimer is formed, organic dimer and its formation is respectively as shown in formula 1, formula 2:
Wherein, the R is selected from least one of H, F, Cl, Br.
It wherein, further include the cathodic protection layer being deposited on the cathode layer, the cathodic protection layer material is as described Organic dimer shown in formula 1.
It wherein, further include the n-layer protective layer being sequentially deposited on the cathodic protection layer, the n is the integer greater than 0； And it is set to the top water blocking layer on the n-th layer protective layer；The protective layer include setting stacked on top of one another buffer layer and Water blocking layer.
It wherein, further include the encapsulation filled layer being set on the protective layer, the encapsulation filled layer material is as described Organic dimer shown in formula 1.
Wherein, the microcavity regulating course, the cathodic protection layer and it is described encapsulation filled layer with a thickness of 0.1~10 μm.
The utility model has the advantages that
The present invention proposes to adjust polytetrafluoro paraxylene applied to flexible OLED microcavity is prepared by changing process conditions Layer, cathodic protection layer and encapsulation filled layer are improving device light-out effect, enhancing encapsulated layer water resistant oxygen ability, are reducing driving electricity While pressure is to improve device operational stability, process difficulty can be also reduced, no replacement is required raw material, and can be by multiple technical process It is completed in a chamber of CVD, greatly reduces the fabrication steps of OLED.
Detailed description of the invention
What is carried out in conjunction with the accompanying drawings is described below, above and other aspect, features and advantages of the embodiment of the present invention It will become clearer, in attached drawing:
Fig. 1 is the structural schematic diagram of the flexible display panels of the embodiment of the present invention 1.
Fig. 2 is the structural schematic diagram of the flexible display panels of the embodiment of the present invention 2.
Fig. 3 is the structural schematic diagram of the flexible display panels of the embodiment of the present invention 3.
Specific embodiment
Hereinafter, with reference to the accompanying drawings to detailed description of the present invention embodiment.However, it is possible to come in many different forms real The present invention is applied, and the present invention should not be construed as limited to the specific embodiment illustrated here.On the contrary, providing these implementations Example is in order to explain the principle of the present invention and its practical application, to make others skilled in the art it will be appreciated that the present invention Various embodiments and be suitable for the various modifications of specific intended application.
Embodiment 1
The present invention provides a kind of flexible display panels, as shown in Figure 1, it is included at least from bottom to up: substrate 10, anode layer 11 (transparent conductive semiconductor layer, abbreviation ITO), the microcavity regulating course 20 being covered on the anode layer 11, hole injection layer 12, Organic emission layer 13, electron transfer layer 14 and cathode layer 15.
Wherein, the microcavity regulating course 20 is mainly used for enhancing the current density of device, brightness, reduces driving voltage, together Shi Tigao device operational stability.In the present invention, microcavity regulating course material is the polymer that organic dimer is formed, described to have Machine dimer and its polymer formulae of formation are respectively as shown in formula 1, formula 2:
Wherein, the R is represented as at least one of H, F, Cl, Br.Compound can be cracked into certainly at high temperature in formula 1 The polymer of the biggish formula 2 of molecular weight is newly aggregated by base weight.If R is all from same atom in the structure of formula 1, for example, institute Organic dimer preferably two polytetrafluoro paraxylene or dimerization tetrabromo paraxylene are stated, then the structural formula of formula 2 is also possible into one Step simplifies and is expressed as formula 3, for example, the polymer being correspondingly formed then is polytetrafluoro paraxylene, poly- tetrabromo paraxylene.
It is also deposited with cathodic protection layer 30 on 15 surface of cathode layer, mainly for the protection of cathode layer, and improves device Light transmission rate.In the present invention, 30 material of cathodic protection layer is organic dimer as shown in the formula 1.
In order to further protect display panel, n-layer protective layer 40, n is also sequentially formed on the cathodic protection layer 30 For the integer greater than 0.In the present embodiment, n=1.Every layer of protective layer 40 includes water blocking layer 42, the buffer layer of setting stacked on top of one another 41.Stress of the buffer layer 41 for buffering device when bending, folding；Water blocking layer 42 is used to increase the waterproof function of display panel Energy.
Water blocking layer 60 at the top of also last setting, directly contacts for user on n-th layer protective layer 40.Top water blocking layer 60 It can be the same or different with the material of water blocking layer 42, be generally both preferably inorganic hydrophobic material；41 material one of buffer layer As preferably organic material.
The preparation method of this flexible display panels of the present embodiment is described below.
Step S1 forms transparent semiconductor electrode film (ITO) on the glass substrate and is used as anode layer.It specifically includes to ITO Pretreatment cleaning, photo-mask process etc. makes to form patterned ITO electrode layer on the glass substrate.
Equation 2
Step S2 forms microcavity regulating course on the anode layer.In conjunction with shown in equation 2, using chemical vapor deposition method, Make two polytetrafluoro paraxylene (see formula 4, abbreviation AF when controlling 100~150 DEG C of temperature in reaction chamber4) evaporation, then promote temperature Degree is 650~750 DEG C, makes to AF4Steam cracking finally deposits and polymerize to be formed on the anode layer at free radical (formula 5) Polymer (such as formula 6) covers on anode layer as microcavity regulating course.Form the AF of microcavity regulating course4, film thickness is 0.1~10 μ m；The current density of device can be enhanced, brightness, reduce driving voltage, while improving device operational stability.
Wherein, chemical vapor deposition method adopted in this step, can be plasma enhanced chemical vapor deposition (PECVD), high density plasma CVD (HDPCVD), inductively coupled plasma chemical vapor deposition Any one of (ICPCVD).
Step S3, as shown in Figure 1, being sequentially depositing hole injection on the microcavity regulating course using vacuum evaporation process Layer, organic emission layer, electron transfer layer and cathode layer.
Step S4 makes two polytetrafluoros when controlling 100~150 DEG C of temperature in reaction chamber using chemical vapor deposition method Paraxylene is (see formula 4, abbreviation AF4) evaporation, deposition forms AF on the cathode layer4Film is as cathodic protection layer.Form yin The AF4 of pole protective layer, film thickness are 0.1~10 μm, and light transmission rate is greater than 98%, and refractive index is 1.6~1.8, can protect cathode, And improve the light transmission rate of device.
Step S5, using PECVD, atom layer deposition process (ALD), laser deposition (PLD) or Sputter technique in cathode Water blocking layer is made on protective layer.The material of water blocking layer is, for example, Al2O3、TiO2, at least one of SiNx, SiCNx, SiOx.
Step S6 prepares organic buffer layer with inkjet printing (IJP) or PECVD；This layer of cushioning layer material is selected from acrylic (Acryl), Hexamethyldisiloxane (HMDSO), polyacrylate and its derivative, polycarbonate and its derivative, polyphenyl second Alkene etc. is at least one to can be used for the material of stress of the buffering device when bending, folding.
Step S5, step S6 completes the preparation of the first protective layer.
Step S7, the preparation of top water blocking layer.Using material identical with the step S5 and process conditions, in buffer layer Water blocking layer at the top of upper formation.In the present embodiment, the material of top water blocking layer is identical as the water blocking layer material.
At this point, obtaining the flexible display panels of the present embodiment.
Embodiment 2
The present embodiment is what is different from the first embodiment is that as shown in Fig. 2, the protective layer 40 and top water blocking layer 60 of the present embodiment Between also add an encapsulation filled layer 50.
Protective layer 40, encapsulation filled layer 50, and finally obtained in 60 structure of top water blocking layer encapsulated on filled layer 50 Obtain the protection structure of " water blocking layer-buffer layer-AF4- water blocking layer ".The encapsulation filled layer is then mainly used for improving encapsulated layer water resistant Oxygen ability extends the service life of OLED device.In the present invention, the encapsulation filled layer material is as shown in the formula 1 Organic dimer.
In order to obtain the structure of the present embodiment, preparation step makes following adjustment.
Step S1~S6 is referring to shown in embodiment 1；S5, S6 complete the preparation of one layer of protective layer 40；
Step S7 makes two polytetrafluoros when controlling 100~150 DEG C of temperature in reaction chamber using chemical vapor deposition method Paraxylene (see formula 4, abbreviation AF4) evaporation, deposition forms AF4 film as encapsulation filled layer on the buffer layer.Encapsulation Filled layer film thickness is 0.1~10 μm, and light transmission rate is greater than 98%, and refractive index is 1.4~1.6, and it is anti-to can be used in raising encapsulated layer Water oxygen ability extends the service life of OLED device.
Step S8, the preparation of top water blocking layer.Using material identical with the step S5 and process conditions, filled out in encapsulation It fills on layer and forms top water blocking layer.In the present embodiment, the material of top water blocking layer is identical as the water blocking layer material.
At this point, obtaining the flexible display panels of the present embodiment.
Embodiment 3
The present embodiment and embodiment two are the difference is that as shown in figure 3, the present embodiment is not only simply formed with the first protective layer 40a forms the second protective layer 40b between encapsulation filled layer 50 and top water blocking layer 60.
In order to obtain the structure of the present embodiment, preparation step makes following adjustment.
Step S1~S6 is referring to shown in embodiment 1；S5, S6 complete the preparation of the first protective layer 40a；
Step S7 makes two polytetrafluoros when controlling 100~150 DEG C of temperature in reaction chamber using chemical vapor deposition method Paraxylene (see formula 4, abbreviation AF4) evaporation, deposition forms AF4 film as encapsulation filled layer on the buffer layer.Encapsulation Filled layer film thickness is 0.1~10 μm, and light transmission rate is greater than 98%, and refractive index is 1.4~1.6, and it is anti-to can be used in raising encapsulated layer Water oxygen ability extends the service life of OLED device.
Step S8, repeating said steps S5, S6 are primary, form the second protective layer 40b on encapsulation filled layer.
Step S9, the preparation of top water blocking layer.It is anti-second using material identical with the step S5 and process conditions Top water blocking layer is formed on sheath.In the present embodiment, the material of top water blocking layer is identical as the water blocking layer material.
At this point, obtaining the flexible display panels of the present embodiment.
In other embodiments, protective layer and encapsulation filled layer are can be repeated as many times in response to different product requirements Deposition, the folding intensity and waterproof performance of flexible display panels can be continuously improved.But no matter any structure top Material layer be inorganic water blocking layer.
In conclusion the film that polytetrafluoro paraxylene (TFPX) is formed has excellent waterproofness and corrosion resistance, and Extra-thin, transparent nonporous film can be made up of CVD.The film clarity that polytetrafluoro paraxylene is formed is high, has excellent Different waterproofness and corrosion resistance can be plated in formation microcavity regulating course on anode, improve the light-out effect of OLED device；Meanwhile Excellent waterproofness illustrates polytetrafluoro paraxylene or a kind of good encapsulating material, can be applicable in flexible OLED encapsulation. The present invention is proposed by changing process conditions for AF4Applied to the flexible OLED microcavity regulating course of preparation, cathodic protection layer and encapsulation Filled layer is stablized improving device light-out effect, enhancing encapsulated layer water resistant oxygen ability, reducing driving voltage with improving device operation While property, process difficulty can be also reduced, no replacement is required raw material, and can be complete in a chamber of CVD by multiple technical process At greatly reducing the fabrication steps of OLED.
Although the present invention has shown and described referring to specific embodiment, it should be appreciated by those skilled in the art that: In the case where not departing from the spirit and scope of the present invention being defined by the claims and their equivalents, can carry out herein form and Various change in details.

Claims (9)

1. a kind of preparation method of flexible display panels, includes the following steps:
Anode layer is formed on substrate；
It is characterized in that,
Using chemical vapor deposition method, controls 650~750 DEG C of temperature, makes organic dimer steam shape on the anode layer At polymer as microcavity regulating course；The structural formula of organic dimer is as shown in Equation 1:
Wherein, the R is represented as at least one of H, F, Cl, Br；
Hole injection layer is formed on the microcavity regulating course；
Organic emission layer is formed on the hole injection layer；
Electron transfer layer is formed in the organic emission layer；
Cathode layer is formed on the electron transport layer；
Using chemical vapor deposition method, 100~150 DEG C of temperature of control deposits organic dimer to conduct on the cathode layer Cathodic protection layer.
2. the preparation method of flexible display panels according to claim 1, which is characterized in that further include:
Protective layer preparation: forming n-layer protective layer on the cathodic protection layer, and n is the integer greater than 0；The protective layer includes The water blocking layer and buffer layer being sequentially depositing from bottom to up；
The water blocking layer at the top of deposition on n-th layer protective layer.
3. the preparation method of flexible display panels according to claim 2, which is characterized in that further include the system for encapsulating filled layer Standby step: utilizing chemical vapor deposition method, and 100~150 DEG C of temperature of control deposits organic dimer to the protection On layer.
4. the preparation method of any one flexible display panels according to claim 1~3, which is characterized in that the chemistry gas Phase deposition method includes plasma enhanced chemical vapor deposition, high density plasma CVD, inductively etc. Any one of ion body chemical vapor phase growing.
5. a kind of flexible display panels include: substrate, anode layer, microcavity regulating course, hole injection layer, You Jifa from bottom to up Penetrate layer, electron transfer layer and cathode layer, which is characterized in that the microcavity regulating course material is the polymerization that organic dimer is formed The polymer formulae of object, organic dimer and its formation is respectively as shown in formula 1, formula 2:
Wherein, the R is selected from least one of H, F, Cl, Br；The flexible display panels further include being deposited on the cathode Cathodic protection layer on layer, the cathodic protection layer material are organic dimer as shown in the formula 1.
6. flexible display panels according to claim 5, which is characterized in that further include being sequentially deposited at the cathodic protection layer On n-layer protective layer, the n is integer greater than 0；And it is set to the top water blocking layer on n-th layer protective layer；The protection Layer includes the buffer layer and water blocking layer of setting stacked on top of one another.
7. flexible display panels according to claim 6, which is characterized in that further include the encapsulation being set on the protective layer Filled layer, the encapsulation filled layer material are organic dimer as shown in the formula 1.
8. flexible display panels according to claim 7, which is characterized in that it is described encapsulation filled layer with a thickness of 0.1~10 μ m。
9. according to the flexible display panels of claim 5 or 6, which is characterized in that the microcavity regulating course, the cathodic protection Layer with a thickness of 0.1~10 μm.
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CN109427988B (en) * 2017-08-21 2021-02-12 上海和辉光电股份有限公司 Display panel and display device
CN108075047A (en) * 2017-12-11 2018-05-25 合肥京东方光电科技有限公司 Organic light emitting diode device and its manufacturing method, display panel
CN109300919B (en) 2018-10-15 2020-09-29 上海天马微电子有限公司 Micro LED display substrate, manufacturing method thereof and display device
CN112786669A (en) * 2021-01-08 2021-05-11 深圳市华星光电半导体显示技术有限公司 OLED display panel
CN113025960B (en) * 2021-03-05 2022-07-19 贵州航天林泉电机有限公司 Parylene F-type vapor deposition method
CN113629110A (en) * 2021-07-23 2021-11-09 深圳市华星光电半导体显示技术有限公司 Display panel and display device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN203644825U (en) * 2013-12-18 2014-06-11 昆山国显光电有限公司 Organic luminescent device and electronic device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000106396A (en) * 1998-09-29 2000-04-11 Sharp Corp Manufacture of semiconductor device
JP4483207B2 (en) * 2003-06-06 2010-06-16 コニカミノルタホールディングス株式会社 Organic electroluminescence element and display device
JP5178088B2 (en) 2006-09-07 2013-04-10 キヤノン株式会社 Organic light emitting device
CN101165912A (en) 2006-10-16 2008-04-23 悠景科技股份有限公司 Organic electroluminescence display element colorful filter structure
CN201547733U (en) * 2009-07-15 2010-08-11 中国科学院上海有机化学研究所 Water-proof sealing structure of LED module
KR101695376B1 (en) * 2010-10-22 2017-01-12 삼성디스플레이 주식회사 Display device and method of manufacturing a display device
TWI424981B (en) * 2011-11-09 2014-02-01 Chung Shan Inst Of Science Facile and effective method of preparing 1,4-bis(chlorodifluoromethyl)benzene
KR102129266B1 (en) * 2014-04-30 2020-07-03 삼성디스플레이 주식회사 Organic light emitting display
CN105161631B (en) * 2015-07-21 2019-01-22 上海和辉光电有限公司 A kind of organic light emitting diode device and preparation method and organic light emitting display panel

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN203644825U (en) * 2013-12-18 2014-06-11 昆山国显光电有限公司 Organic luminescent device and electronic device

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